CN108731825A - A kind of THz wave wavelength detecting method - Google Patents
A kind of THz wave wavelength detecting method Download PDFInfo
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- CN108731825A CN108731825A CN201710259273.1A CN201710259273A CN108731825A CN 108731825 A CN108731825 A CN 108731825A CN 201710259273 A CN201710259273 A CN 201710259273A CN 108731825 A CN108731825 A CN 108731825A
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Classifications
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- G—PHYSICS
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- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Carbon And Carbon Compounds (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention relates to a kind of THz wave wavelength detecting methods comprising following steps：Detected THz wave is set to be directly incident in the THz wave reception device, the THz wave reception device detects the first intensity data of the detected THz wave；Make detected THz wave through being incident in the THz wave reception device after a carbon nano tube structure, the THz wave reception device detects the second intensity data of the detected THz wave；The penetrance curve of detected THz wave is calculated according to second intensity data and the first intensity data；And by the way that one normal data of penetrance curve to be compared, obtain the wave-length coverage of the detected THz wave, wherein the normal data includes THz wave to the penetrance of the carbon nano tube structure and the relation data of wave number.
Description
Technical field
The present invention relates to THz wave detection, modulation and applied technical field.
Background technology
THz wave is commonly referred to as frequency in 0.1THz~10THz, electromagnetic wave of the wavelength between 30 μm~3mm,
Wave band belongs to far infrared band between microwave and infrared light.Due to lacking effective production method and detection means, scientist
It is very limited for the understanding of the wave band properties of electromagnetic radiation.
In recent ten years, the rapid development of ultrafast laser technique provides for the generation of THz wave and stablizes, reliable swashs
Light emitting source makes the generation and application of THz wave be flourished.However, since THz source transmission power is relatively low, and
Hot ambient noise is relatively high, needs highly sensitive detection means detection terahertz signal.Currently, people are to THz wave
Performance understanding is fewer.Therefore, how to detect, modulate and become using THz wave the hot spot studied.
Invention content
Present inventor is the study found that can adjust the penetrance of THz wave by carbon nano tube structure, that is, terahertz
Hereby the penetrance of wave is as wave number or wavelength be in Wave crest and wave trough alternate shaped.Moreover, by adjusting the carbon nano tube structure
Temperature, or adjust the angle of the extending direction and terahertz polarization direction of carbon nanotube in carbon nano tube structure, Ke Yijin
The one step section Wave crest and wave trough shape.In consideration of it, a kind of THz wave emitter of present invention offer, a kind of communication of THz wave
Device and a kind of THz wave wavelength detecting device.
A kind of THz wave wavelength detecting method comprising following steps：Detected THz wave is set to be directly incident in
In the THz wave reception device, the THz wave reception device detects the first intensity of the detected THz wave
Data；Detected THz wave is set to be incident in the THz wave reception device later through a carbon nano tube structure, it is described
THz wave reception device detects the second intensity data of the detected THz wave；According to second intensity data and
First intensity data calculates the penetrance curve of detected THz wave；And by by one normal data of penetrance curve
It is compared, obtains the wave-length coverage of the detected THz wave, wherein the normal data includes that THz wave receives the carbon
The penetrance of nanotube structures and the relation data of wave number.
Such as above-mentioned THz wave wavelength detecting method, wherein the carbon nano tube structure includes a carbon nano-tube film, described
Carbon nano-tube film includes multiple by the end to end carbon nano-tube bundle of Van der Waals force, each carbon nano-tube bundle include it is multiple mutually
Parallel carbon nanotube.
Such as above-mentioned THz wave wavelength detecting method, wherein the surface of the multiple carbon nanotube is coated with metallic conduction
Layer.
Such as above-mentioned THz wave wavelength detecting method, wherein the edge of the carbon nano tube structure is fixed on a support frame
On frame, middle section is vacantly arranged by the braced frame.
Such as above-mentioned THz wave wavelength detecting method, wherein described that detected THz wave is made to penetrate carbon nanotube knot
Further comprise while structure：Change the extending direction of carbon nanotube and terahertz polarization direction in the carbon nano tube structure
Angle；The normal data includes penetrance and wave number and the carbon nanotube knot of the THz wave to the carbon nano tube structure
The relation data of the extending direction of carbon nanotube and the angle in terahertz polarization direction in structure.
Such as above-mentioned THz wave wavelength detecting method, wherein the extension for changing carbon nanotube in carbon nano tube structure
The method of direction and the angle in terahertz polarization direction is to rotate the carbon nano tube structure.
Such as above-mentioned THz wave wavelength detecting method, wherein described that detected THz wave is made to penetrate carbon nanotube knot
Further comprise while structure：The carbon nano tube structure is heated, and measures the temperature of the carbon nano tube structure；The criterion numeral
According to the penetrance and wave number and the relationship of the temperature of the carbon nano tube structure including THz wave to the carbon nano tube structure
Data.
Such as above-mentioned THz wave wavelength detecting method, wherein described that detected THz wave is made to penetrate carbon nanotube knot
Further comprise while structure：Apply voltage to the carbon nano tube structure both ends；The normal data includes THz wave to this
The relation data for the voltage that the penetrance of carbon nano tube structure applies with wave number and to the carbon nano tube structure.
Such as above-mentioned THz wave wavelength detecting method, wherein described that detected THz wave is made to penetrate carbon nanotube knot
Further comprise while structure：Rotate and heat the carbon nano tube structure；The normal data includes THz wave to the carbon nanometer
The penetrance of pipe structure and wave number and the temperature of the carbon nano tube structure and the relation data of rotation angle.
Such as above-mentioned THz wave wavelength detecting method, wherein the carbon nano tube structure is vacantly set to a vacuum tank
In.
Compared to the prior art, THz wave wavelength detecting method of the invention, by carbon nano tube structure to Terahertz
Wave modulation rule is detected THz wave wavelength, simple in structure, and detection method is reliable.
Description of the drawings
Fig. 1 is the structural schematic diagram for the THz wave emitter that the embodiment of the present invention 1 provides.
Fig. 2 is the structural schematic diagram of the modulating device for the THz wave emitter that the embodiment of the present invention 1 provides.
Fig. 3 is the stereoscan photograph for the carbon nanotube membrane that the embodiment of the present invention 1 uses.
Fig. 4 is the stereoscan photograph for the non-twisted carbon nano tube line that the embodiment of the present invention 1 uses.
Fig. 5 is the stereoscan photograph of the carbon nano tube line for the torsion that the embodiment of the present invention 1 uses.
Fig. 6 is THz wave of the carbon nanotube membrane to far infrared band of the same direction setting of the embodiment of the present invention 1
Penetrance test result.
Fig. 7 is the THz wave for the carbon nanotube membrane centering infrared band that the same direction of the embodiment of the present invention 1 is arranged
Penetrance test result.
Fig. 8 is carbon nanotube membrane arranged in a crossed manner the wearing to the THz wave of far infrared band of the embodiment of the present invention 1
Saturating rate test result.
Fig. 9 is the carbon nanotube membrane for the cladding preformed layer that the same direction of the embodiment of the present invention 2 is arranged to far infrared wave
The penetrance test result of the THz wave of section.
Figure 10 is the carbon nanotube membrane centering infrared waves for the cladding preformed layer that the same direction of the embodiment of the present invention 2 is arranged
The penetrance test result of the THz wave of section.
Figure 11 is the structural schematic diagram for the THz wave emitter that the embodiment of the present invention 3 provides.
Figure 12 is that the modulating device of THz wave emitter that the embodiment of the present invention 3 provides and the structure of rotating device are shown
It is intended to.
To remote red behind 15 degree of angles of each rotation of carbon nanotube membrane that Figure 13 is arranged for the same direction of the embodiment of the present invention 3
The penetrance test result of the THz wave of wave section.
Figure 14 be the embodiment of the present invention 3 same direction be arranged carbon nanotube membrane rotate 0 degree with an angle of 90 degrees after to remote
The penetrance test result of the THz wave of infrared band.
Figure 15 is right behind 60 degree of the carbon nanotube membrane rotation of the same direction setting of the embodiment of the present invention 3 and 150 degree of angles
The penetrance test result of the THz wave of far infrared band.
Figure 16 be the embodiment of the present invention 3 same direction be arranged carbon nanotube membrane rotate 0 degree with 180 degree angle after to remote
The penetrance test result of the THz wave of infrared band.
Figure 17 is the structural schematic diagram for the THz wave emitter that the embodiment of the present invention 4 provides.
Figure 18 is that the modulating device of THz wave emitter that the embodiment of the present invention 4 provides and the structure of heating device are shown
It is intended to.
Figure 19 is the sectional view of S-S along Figure 18.
Figure 20 is the structural representation of another heating device for the THz wave emitter that the embodiment of the present invention 4 provides
Figure.
Figure 21 is after the single-layer carbon nano-tube membrane that the same direction of the embodiment of the present invention 4 is arranged applies different voltages heating
The penetrance test result of the THz wave of centering infrared band.
Figure 22 is after the single-layer carbon nano-tube membrane that the same direction of the embodiment of the present invention 4 is arranged applies different voltages heating
To the penetrance test result of the THz wave of far infrared band.
Figure 23 is after the Double-walled Carbon Nanotube membrane that the same direction of the embodiment of the present invention 4 is arranged applies different voltages heating
To the penetrance test result of the THz wave of far infrared band.
Figure 24 is the structural schematic diagram for the THz wave emitter that the embodiment of the present invention 5 provides.
Figure 25 is the structural schematic diagram for the THz wave communication device that the embodiment of the present invention 6 provides.
Figure 26 is the module diagram of the decryption device for the THz wave communication device that the embodiment of the present invention 6 provides.
Figure 27 is the structural schematic diagram for the THz wave communication device that the embodiment of the present invention 7 provides.
Figure 28 is the structural schematic diagram for the THz wave communication device that the embodiment of the present invention 8 provides.
Figure 29 is the structural schematic diagram for the THz wave communication device that the embodiment of the present invention 9 provides.
Figure 30 is the structural schematic diagram for the THz wave wavelength detecting device that the embodiment of the present invention 10 provides.
Figure 31 is the module diagram of the computer for the THz wave wavelength detecting device that the embodiment of the present invention 10 provides.
Figure 32 is the structural schematic diagram for the THz wave wavelength detecting device that the embodiment of the present invention 11 provides.
Figure 33 is the structural schematic diagram for the THz wave wavelength detecting device that the embodiment of the present invention 12 provides.
Figure 34 is the structural schematic diagram for the THz wave wavelength detecting device that the embodiment of the present invention 13 provides.
Main element symbol description
Specific implementation mode
The present invention is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiment 1
Referring to Fig. 1, the embodiment of the present invention 1 provides a kind of THz wave emitter 10 comprising a Terahertz wave source
11 and one be placed in the Terahertz wave source 11 111 side of exit facet modulating device 12.The Terahertz wave source 11 is for swashing
Send out THz wave.The THz wave that the Terahertz wave source 11 excites forms Terahertz modulating wave after the modulating device 12 modulation
And launch.
The structure of the Terahertz wave source 11 is unlimited, can be incoherent heat radiation light source, broadband pulse (T-
Ray) the continuous wave light source of light source or narrow-band.
Referring to Fig. 2, the modulating device 12 includes a braced frame 120 and a carbon nano tube structure 121.The branch
The shape and size of support frame frame 120 can select as needed.The material that the braced frame 120 arrives is unlimited, can be metal,
Polymer, glass, ceramics or carbon material etc..The braced frame 120 defines an opening.The side of the carbon nano tube structure 121
Edge is fixed in the braced frame 120, and middle section is vacantly arranged by the braced frame 120.The carbon nano tube structure
121 can be fixed in the braced frame 120 by binder.The carbon nano tube structure 121 can be directly arranged at institute
It states on the exit facet 111 of Terahertz wave source 11, can also be spaced and be arranged with the exit facet 111 of the Terahertz wave source 11.Work as institute
When stating carbon nano tube structure 121 and can be directly arranged on the exit facet 111 of the Terahertz wave source 11, the braced frame
120 can be omitted.
The carbon nano tube structure 121 includes multiple carbon nanotubes for orienting extension in the same direction and is formed multiple uniform
The micropore of distribution.The multiple carbon nanotube closely connects that the carbon nano tube structure 121 is made to form one by Van der Waals force
Self supporting structure.So-called self supporting structure refers to that the structure may not need a supporter and keep a specific membrane structure.Cause
And the carbon nano tube structure 121 has self-supporting and partly can vacantly be arranged.The carbon nanotube is parallel to the carbon and receives
The surface of nanotube structures 121.The carbon nanotube includes in single-walled carbon nanotube, double-walled carbon nano-tube and multi-walled carbon nanotube
It is one or more.A diameter of 0.5 nanometer~10 nanometers of the single-walled carbon nanotube, a diameter of the 1.0 of double-walled carbon nano-tube receives
Rice~15 nanometers, a diameter of 1.5 nanometers~50 nanometers of multi-walled carbon nanotube.The length of the carbon nanotube is more than 50 microns.
Preferably, the length of the carbon nanotube is 200 microns~900 microns.The size of the micropore 116 is 1 nanometer~0.5 micron.Tool
Body, the carbon nano tube structure 121 may include that an at least carbon nanotube membrane or multiple carbon that are arranged in parallel and at interval are received
Mitron line.The carbon nano tube line can be the carbon nano tube line of non-twisted carbon nano tube line or torsion.
Referring to Fig. 3, the carbon nanotube membrane includes the carbon nano-tube bundle that multiple continuous and orientation extends.Multiple carbon is received
Mitron beam is joined end to end by Van der Waals force.Each carbon nano-tube bundle includes multiple carbon nanotubes being mutually parallel, multiple phase
Mutually parallel carbon nanotube is combined closely by Van der Waals force.A diameter of 10 nanometers~200 nanometers of the carbon nano-tube bundle, preferably
, 10 nanometers~100 nanometers.Carbon nanotube in the carbon nanotube membrane is arranged of preferred orient in the same direction.The carbon is received
Mitron membrane includes multiple micropores.The micropore is the through-hole of a thickness direction for running through the carbon nanotube membrane.The micropore can be
Hole and/or gap.When the carbon nano tube structure 121 only includes single-layer carbon nano-tube membrane, in the carbon nanotube membrane
There is gap, wherein the size in the gap is 1 nanometer~0.5 micron between adjacent carbon nanotube segment.The carbon nanotube
The thickness of membrane is 0.01 micron~100 microns.It is appreciated that in the carbon nano tube structure being made of multilayer carbon nanotube membrane
In 121, the orientation of the carbon nanotube in two neighboring carbon nanotube membrane is identical.The carbon nanotube membrane can pass through
A carbon nano pipe array is pulled to directly obtain.The structure and preparation method thereof of the carbon nanotube membrane refer to model keep it is kind et al.
Filed on 2 9th, 2007, in No. CN101239712B Chinese issued patents " carbon nanometer of bulletin on May 26th, 2010
Pipe membrane structure and preparation method thereof ", applicant：Tsinghua University, Hongfujin Precise Industry (Shenzhen) Co., Ltd..To save a piece
Width is only incorporated in this, but all technologies of above-mentioned application disclose the part that also should be regarded as the exposure of the present patent application technology.
Referring to Fig. 4, the non-twisted carbon nano tube line includes multiple along the non-twisted carbon nano tube line length direction
The carbon nanotube of arrangement.Specifically, which includes multiple carbon nanotube segments, multiple carbon nanotube
Segment is joined end to end by Van der Waals force, and each carbon nanotube segment includes multiple being mutually parallel and closely being tied by Van der Waals force
The carbon nanotube of conjunction.The carbon nanotube segment has arbitrary length, thickness, uniformity and shape.The non-twisted carbon nanometer
Length of pipeline is unlimited, a diameter of 0.5 nanometer~100 microns.Non-twisted carbon nano tube line is by carbon nanotube membrane by having
Solvent handles to obtain.Specifically, the whole surface that organic solvent is infiltrated to the carbon nanotube membrane, it is organic molten in volatility
Under the action of the surface tension that agent generates when volatilizing, the multiple carbon nanotubes being mutually parallel in carbon nanotube membrane pass through model moral
Hua Li combines closely, to make carbon nanotube membrane be punctured into a non-twisted carbon nano tube line.The organic solvent is volatility
Organic solvent uses ethyl alcohol such as ethyl alcohol, methanol, acetone, dichloroethanes or chloroform in the present embodiment.It is handled by organic solvent
Non-twisted carbon nano tube line compared with the carbon nano-tube film handled without organic solvent, specific surface area reduce, viscosity reduce.
The carbon nano tube line of the torsion is to be turned round at carbon nanotube membrane both ends in opposite direction using a mechanical force
Turn to obtain.It is arranged referring to Fig. 5, the carbon nano tube line of the torsion includes multiple carbon nano tube line axial screws around the torsion
Carbon nanotube.Specifically, the carbon nano tube line of the torsion includes multiple carbon nanotube segments, and multiple carbon nanotube segment passes through
Van der Waals force joins end to end, and each carbon nanotube segment includes multiple being mutually parallel and being received by the carbon that Van der Waals force is combined closely
Mitron.The carbon nanotube segment has arbitrary length, thickness, uniformity and shape.The carbon nanotube line length of the torsion is not
Limit, a diameter of 0.5 nanometer~100 microns.Further, the carbon nanotube that a volatile organic solvent handles the torsion can be used
Line.Under the action of the surface tension generated when volatile organic solvent volatilizees, phase in the carbon nano tube line for torsion that treated
Adjacent carbon nanotube is combined closely by Van der Waals force, so that the specific surface area of the carbon nano tube line of torsion is reduced, density and intensity
Increase.
Described liner structure of carbon nano tube and preparation method thereof refers to model and keeps kind et al. to be applied on the 16th in September in 2002
, in No. CN100411979C of the bulletin on the 20th of August in 2008 Chinese issued patents " a kind of Nanotubes and its manufacturer
Method ", applicant：Tsinghua University, Hongfujin Precise Industry (Shenzhen) Co., Ltd., and filed in 16 days December in 2005,
In No. CN100500556C Chinese issued patents application " carbon nano-tube filament and its making side of bulletin on June 17th, 2009
Method ", applicant：Tsinghua University, Hongfujin Precise Industry (Shenzhen) Co., Ltd..To save space, it is only incorporated in this, but above-mentioned
Apply for that all technologies disclose the part that also should be regarded as the exposure of the present patent application technology.
The embodiment of the present invention 1 further provides for a kind of method generating Terahertz modulating wave, and this approach includes the following steps：
Step S11 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；And
Step S12 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched after penetrating the carbon nano tube structure 121, wherein the carbon nano tube structure
121 include multiple carbon nanotubes for orienting extension in the same direction.
In the step S12, the THz wave that Terahertz wave source 11 generates is after the modulation of the carbon nano tube structure 121
Form terahertz polarization wave.
Present inventor is the study found that can adjust the penetrance of THz wave by carbon nano tube structure 121, that is,
The penetrance of THz wave is in Wave crest and wave trough alternate shaped with wave number or wavelength.In the present embodiment, be respectively adopted 1 layer, 2 layers, 3
Layer, 4 layers, 5 layers of carbon nanotube membrane measure, the extending direction of the carbon nanotube of multilayer carbon nanotube membrane is identical, and
The extending direction of carbon nanotube is respectively horizontal direction and vertical direction.
Be 680~30 in wave number referring to Fig. 6, the far infrared band that wave-length coverage is 15 microns~300 microns, no matter carbon
The extending direction of nanotube is horizontally oriented or vertical direction, and the penetrance of THz wave is as wave number is in apparent wave crest
Trough alternate shaped.Moreover, when the extending direction of carbon nanotube is respectively horizontal direction and vertical direction, the Wave crest and wave trough is just
It is good opposite.For example, wave number be 475~300 ranges in, when the extending direction of carbon nanotube be horizontal direction when, the penetrance
In trough shape, and when the extending direction of carbon nanotube is vertical direction, which is in wave crest shape.In addition, with carbon
The increase of the nanotube membrane number of plies, the penetrance of THz wave are gradually reduced, but are appointed with wave number and so replaced shape in Wave crest and wave trough
Shape.Moreover, with the increase of the carbon nanotube membrane number of plies, when the extending direction of carbon nanotube is respectively horizontal direction and vertical side
The contrast of Xiang Shi, the Wave crest and wave trough also gradually increase.For example, being in 475~300 ranges, with carbon nanotube membrane in wave number
The increase of the number of plies, the contrast of the Wave crest and wave trough is also apparent gradually to be increased.
It is 7500~400 in wave number referring to Fig. 7, the middle infrared band that wave-length coverage is 1.3 microns~25 microns, no matter
The extending direction of carbon nanotube is horizontally oriented or vertical direction, and the penetrance of THz wave is as wave number is also in certain wave
Spike paddy alternate shaped, but compared with far infrared band, Wave crest and wave trough Alternate Phenomenon is less apparent.In addition, with carbon nanometer
The increase of the pipe membrane number of plies, the penetrance of THz wave are gradually reduced.But Wave crest and wave trough Alternate Phenomenon is but gradually reinforced.Example
When such as, using 5 layers of carbon nanotube membrane, it is already possible to find out apparent Wave crest and wave trough Alternate Phenomenon.
Further, in the present embodiment, the carbon nanotube membrane that 2 layers and 4 layers of intersection is respectively adopted measures.Wherein,
When using 2 layers of carbon nanotube membrane, the extending direction of the carbon nanotube of 2 layers of carbon nanotube membrane is vertical.And use 4 layers of carbon nanometer
When pipe membrane, the 1st is identical with the extending direction of the carbon nanotube in the 3rd layer of carbon nanotube membrane, the 2nd and the 4th layer of carbon nanotube
The extending direction of carbon nanotube in membrane is identical, and, the extension side of the carbon nanotube in the 1st and the 2nd layer of carbon nanotube membrane
To vertical.Referring to Fig. 8, in far infrared band, when by the carbon nanotube membrane of 2 layers and 4 layers of intersection rotate 0 degree, 90 degree, 180
Degree and at 270 degree, measurement result is essentially identical, and does not have Wave crest and wave trough Alternate Phenomenon.It can be seen that above-mentioned Wave crest and wave trough is handed over
It is caused by periodically aligning and stretch due to the carbon nanotube in carbon nano tube structure 121 for phenomenon.Due to adjacent carbons nanometer
Gap between pipe is suitable with the wavelength of THz wave, and THz wave interferes when penetrating carbon nano tube structure 121, therefore generates
Wave crest and wave trough Alternate Phenomenon.The Wave crest and wave trough Alternate Phenomenon is macroscopically showing as polarization characteristic.
Embodiment 2
The THz wave emitter 10 that the embodiment of the present invention 2 provides is sent out with the THz wave that the embodiment of the present invention 1 provides
10 structure of injection device is essentially identical, and difference lies in the carbon for orienting extension in the carbon nano tube structure 121 in the same direction is received
The surface of mitron is coated with one layer of preformed layer.Preferably, the preformed layer is coated on the whole surface of each carbon nanotube.
The material of the preformed layer can be the metals such as gold, nickel, titanium, iron, aluminium, titanium, chromium, aluminium oxide, magnesia, zinc oxide,
At least one of the metal oxides such as hafnium oxide, metal nitride or metal sulfide etc..It is appreciated that the preformed layer
Material be not limited to it is above-mentioned enumerate material, can also be the non-metallic carbides such as nonmetal oxides, the silicon carbide such as silica
Or non-metal nitrides such as silicon nitride etc., if the surface for being deposited on the carbon nano tube structure 121 that can be physical, and will
Carbon nanotube coats.The physical deposition refers to that the preformed layer is not changed with the carbon nano tube structure 121
Reaction is learned, but is combined closely by Van der Waals force and the carbon nano tube structure 121, and invests the carbon nano tube structure
The surface of carbon nanotube in 121.The thickness of the preformed layer is unlimited, can be 3 nanometers~50 nanometers.
In the present embodiment, alundum (Al2O3) is respectively set on the surface of single-layer carbon nano-tube membrane by e-beam evaporation
Layer and layer gold are measured as preformed layer, wherein prefabricated layer thickness is respectively 15 nanometers and 30 nanometers, the extension of carbon nanotube
Direction is respectively horizontal direction and vertical direction.
Referring to Fig. 9, in far infrared band, no matter the extending direction of carbon nanotube is horizontally oriented or vertical direction, wave
Spike paddy Alternate Phenomenon is still apparent.But relative to pure nano-carbon tube membrane, after coating alundum (Al2O3) layer, Wave crest and wave trough
Alternate Phenomenon is weakened, and after coating layer gold, Wave crest and wave trough Alternate Phenomenon is remarkably reinforced.Also, coat the sample after layer gold
Penetrance have apparent ascendant trend in lower wave number, this is no for pure nano-carbon tube structure 121.In addition, with
Layer gold thickness increases, the penetrance entire lowering of THz wave, but Wave crest and wave trough Alternate Phenomenon is still apparent.
Referring to Figure 10, in middle infrared band, the single-layer carbon nano-tube membrane for coating layer gold is drawn than pure single-layer carbon nano-tube
Film penetrance is decreased obviously, but Wave crest and wave trough Alternate Phenomenon is but remarkably reinforced than pure single-layer carbon nano-tube membrane.And it coats
Single-layer carbon nano-tube membrane after alundum (Al2O3) layer, Wave crest and wave trough Alternate Phenomenon almost disappear.
As typical metal material, gold is mainly derived from its carrier electrons for the absorption of electromagnetic wave energy.This is same
Carbon nanotube membrane material is similar.However, due to gold electron amount will far more than carbon nanotube, a small amount of gold
Introducing can have considerable influence to the transmitance of carbon nano-tube film.From this starting point, by metal evaporation, we can be with
Effectively adjust the transmitance of carbon nano-tube film.Show the transmitance of carbon nanotube by the plated film comparison with metal oxide
The really same electronic correlation of behavior, it is referred to as electronic-controlled.And it is wider to the modification scope of transmitance by electronics, in covering entirely
It is infrared between far-infrared band.Regulation and control are insensitive to coating film thickness, more sensitive to material.In addition, due to the metal layer of vapor deposition
The aobvious enhancing of the Wave crest and wave trough Alternate Phenomenon of carbon nano-tube film, it is alternately existing that this shows that metal layer itself can also generate Wave crest and wave trough
As.After carbon nanotube film surface evaporated metal layer, the identical carbon nano-tube film of structure and metal layer are equivalent to respectively to terahertz
Hereby wave transmission is modulated and is superimposed.
Embodiment 3
1-12 is please referred to Fig.1, the embodiment of the present invention 3 provides a kind of THz wave emitter 10A comprising a Terahertz
Wave source 11, one is placed in the modulating device 12 and a rotating device 13 of 111 side of exit facet of the Terahertz wave source 11.
The THz wave emitter 10A that the embodiment of the present invention 3 provides is sent out with the THz wave that the embodiment of the present invention 1 provides
10 structure of injection device is essentially identical, and difference lies in further comprise a rotating device 13.The rotating device 13 is for rotating
The Terahertz wave source 11 or/and modulating device 12, to adjust the extension side of carbon nanotube in the carbon nano tube structure 121
To the angle with terahertz polarization direction.The rotating device 13 can also be mounted on the Terahertz wave source 11, also may be used
To be mounted on the modulating device 12.Alternatively, respectively installing one on the Terahertz wave source 11 and modulating device 12 respectively
Rotating device 13.
In the present embodiment, the rotating device 13 is connect with the braced frame 120, for rotating the braced frame 120, from
Make the plane internal rotation where it of the carbon nano tube structure 121.The rotating device 13 includes at least motor and control mould
Block.The precision of 121 rotation angle of the carbon nano tube structure is less than or equal to 5 degree, it is preferable that the precision of rotation angle is 1 degree.
It is appreciated that since the practical polarization direction of THz wave can not be determined in advance, the present embodiment is defined perpendicular to ground
Directional reference, with carbon nanotube extend perpendicularly to ground be 0 degree of angle.When the only described carbon nano tube structure 121 rotates
When, the carbon nano tube structure 121 rotate angle be exactly in the carbon nano tube structure 121 extending direction of carbon nanotube with
The angle in terahertz polarization direction.When the carbon nano tube structure 121 and the Terahertz wave source 11 rotate simultaneously, according to
The angle of 11 each spinning of the carbon nano tube structure 121 and the Terahertz wave source can calculate the carbon nano tube structure
The angle of the extending direction of carbon nanotube and terahertz polarization direction in 121.For example, working as 121 He of the carbon nano tube structure
When 11 direction of rotation of Terahertz wave source is identical, which is the carbon nano tube structure 121 and the Terahertz wave source 11
The difference of respective rotation angle.When the carbon nano tube structure 121 is opposite with 11 direction of rotation of Terahertz wave source, the angle
For the sum of 11 respective rotation angle of the carbon nano tube structure 121 and the Terahertz wave source.
The embodiment of the present invention 3 further provides for a kind of method generating Terahertz modulating wave, and this approach includes the following steps：
Step S31 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S32 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched after penetrating the carbon nano tube structure 121, wherein the carbon nano tube structure
121 include multiple carbon nanotubes for orienting extension in the same direction；And
Step S33 rotates the Terahertz wave source 11 or/and modulating device 12, to adjust the carbon nano tube structure
The angle of the extending direction of carbon nanotube and terahertz polarization direction in 121.
The present embodiment is measured using single-layer carbon nano-tube membrane, and ground is extended perpendicularly to as 0 with carbon nanotube
It spends angle to rise, be measured once every 15 degree, until 180 degree.Referring to Figure 13, above-mentioned Wave crest and wave trough Alternate Phenomenon is in periodically change
Change.That is, as carbon nanotube membrane rotates, gradually mutually converted between peaks and troughs.Referring to Figure 14-15, work as carbon nanotube
After membrane is rotated by 90 °, wave crest becomes trough, and trough becomes wave crest, and differs under 90 degree of two angles, and Wave crest and wave trough is in
Symmetry shape.Referring to Figure 16, after carbon nanotube membrane rotates 180 degree, the Wave crest and wave trough shape of Wave crest and wave trough shape and 0 degree of angle
It is identical.
Embodiment 4
7 are please referred to Fig.1, the embodiment of the present invention 3 provides a kind of THz wave emitter 10B comprising a THz wave
Source 11, one is placed in the modulating device 12 of 111 side of exit facet of the Terahertz wave source 11, a vacuum tank 14 and one heating dress
Set 15.
The THz wave emitter 10B that the embodiment of the present invention 4 provides is sent out with the THz wave that the embodiment of the present invention 1 provides
10 structure of injection device is essentially identical, and difference lies in further comprise vacuum tank 14 and heating device 15.The heating device
15 for heating the carbon nano tube structure 121.The modulating device 12 is set in the vacuum tank 14, for protecting
The carbon nano tube structure 121 for stating modulating device 12, to aoxidize after preventing the carbon nano tube structure 121 from being heated.In particular, when described
After 121 surface clad layer of carbon nano tube structure, metal layer is readily formed metal oxide when heating.It is appreciated that by
It is set in vacuum tank 14 in carbon nano tube structure 121, the heating device 15 can be to be set to the vacuum tank 14
Interior special electric heater unit, the optical heating device that can also be set to outside vacuum tank 14, such as laser heating.Preferably,
By to the carbon nano tube structure 121 apply voltage come realize heating, without introduce carbon nano tube structure 121 other than other add
Thermal.Because the heat exchange between other heating devices and carbon nano tube structure 121 is mainly carried out by heat radiation, and hot spoke
Other electromagnetic waves can be introduced by penetrating, to form interference to the adjusting of THz wave.
The material preparation that the vacuum tank 14 can be penetrated using THz wave, such as glass or transparent resin.It is described
The vacuum level requirements of vacuum tank 14 are not high, as long as pressure is less than 100 pas.It is appreciated that.In the vacuum tank 14
Inert gas can be filled.
In the present embodiment, the heating device 15 includes a first electrode 151, a second electrode 152 and a power supply
153.The first electrode 151 is arranged with the interval of second electrode 152, and is electrically connected respectively with the power supply 153.First electricity
Pole 151 or second electrode 152 are metal layer or sheet metal.The first electrode 151 is fixed on the support with second electrode 152
On frame 120, and it is electrically connected with the carbon nano tube structure 121.The carbon nano tube structure 121 is clamped in the braced frame
Between 120 and the first electrode 151 or second electrode 152.The power supply 153 can be AC power or DC power supply.When
When applying voltage to the carbon nano tube structure 121 by the first electrode 151 and second electrode 152, the carbon nanotube
Structure 121 can self-heating.
8-19 is please referred to Fig.1, specifically, the length of the carbon nano tube structure 121 is more than the braced frame 120 in length
Spend the size in direction.The carbon nano tube structure 121 is set to a surface of the braced frame 120, and both ends are bent respectively
It is set to the back side of the braced frame 120 afterwards.The first electrode 151 or second electrode 152 are becket, are sheathed on institute
It states in braced frame 120, so that the carbon nano tube structure 121 of 120 front and back of the braced frame is clamped in institute
It states between braced frame 120 and the first electrode 151 or second electrode 152.
It is appreciated that in the present embodiment, the carbon nano tube structure 121 is used as heating element simultaneously.At another
In embodiment, the heating device 15 may include special heating element.For example, Figure 20 is please referred to, the heating device 15
Including the heating film 154 that a THz wave can penetrate, which is set on the inner wall of the vacuum tank 14 and in this
The first electrode 151 and second electrode 152 are electrically connected.The heating film 154 is set with the interval of the carbon nano tube structure 121
It sets.The material of the heating film 154 can be ITO.
The embodiment of the present invention 4 further provides for a kind of method generating Terahertz modulating wave, and this approach includes the following steps：
Step S41 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S42 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched after penetrating the carbon nano tube structure 121, wherein the carbon nano tube structure
121 include multiple carbon nanotubes for orienting extension in the same direction；And
Step S43 heats the carbon nano tube structure 121.
In the step S43, the process for heating the carbon nano tube structure 121 can also include changing the carbon nanotube
The temperature of structure 121.In the present embodiment, pass through the both ends to the carbon nano tube structure 121 along carbon nanotube extending direction
Apply voltage and heats the carbon nano tube structure 121.The voltage range of the application is 0V~200V.Further, to the carbon
The voltage that nano tube structure 121 applies along the both ends of carbon nanotube extending direction can be the electricity that constant pressure may be variation
Pressure.
In 1st test of the present embodiment, measured using single-layer carbon nano-tube membrane, the extending direction of carbon nanotube
Respectively horizontal and vertical, it is respectively 0V, 30V, 60V and 90V to apply voltage.Referring to Figure 21, close to middle infrared band, with
Voltage increase, the penetrance of THz wave is being gradually reduced, and in close far infrared band, under penetrance is then violent
Drop.Wave crest and wave trough Alternate Phenomenon still retains, but unobvious.
In 2nd test of the present embodiment, measured using single-layer carbon nano-tube membrane, the extending direction of carbon nanotube
Respectively horizontal and vertical, it is respectively 0V, 20V, 40V, 60V, 80V and 100V to apply voltage.Referring to Figure 22, as voltage increases
Greatly, the penetrance of far infrared band drastically declines, and this it appears that Wave crest and wave trough Alternate Phenomenon.In addition, with voltage
Increase Wave crest and wave trough Alternate Phenomenon be in amplification trend, some features that are very weak under no-voltage or not seeing, under high voltages
Tend to be apparent.For example, the wave crest and trough near at wave number is 150,250 and 600 become more as voltage increases
Add apparent.
It in 3rd test of the present embodiment, is measured using Double-walled Carbon Nanotube membrane, other parameters and the 2nd survey
It tries identical.Referring to Figure 23, the measurement result using Double-walled Carbon Nanotube membrane and the measurement knot using single-layer carbon nano-tube membrane
Fruit is essentially identical.
It is appreciated that an important difference of carbon nanotube and traditional metal and semi-conducting material, is carbon nanotube
Phonon behavior.As a kind of quasi particle, phonon has served very important in the heat conduction of carbon nanotube.Due to electronics
Thermal capacity and phonon are far from an order of magnitude, and the property of the highly thermally conductive low heat capacity of carbon nanotube is coming substantially from phonon contribution.
Since the thermal capacity of electronics is extremely low, and carbon nanotube heat conduction is not rely on electronics, but phonon, therefore, carbon nanotube at this time
Transmitance reduce mainly since phonon regulates and controls, and there is no direct relations with electronics.
2 it is found that influence of the metal-coated membrane for carbon nanotube transmitance is infrared in covering and far infrared in conjunction with the embodiments
Wave band, and what heating mainly influenced is far infrared band.Influence this demonstrate heating means to carbon nanotube slave really
With metal-coated membrane difference in reason.The energy of either semiconductor type or metal types, the chemical bond of carbon nanotube is higher.Far
It is main motor pattern that infrared band, which is vibrated with lattice itself for the phonon etc. of representative, and energy is relatively low, mainly remote red
Outer range.This can be verified from the research of phonon spectra control.
Embodiment 5
Figure 24 is please referred to, the embodiment of the present invention 5 provides a kind of THz wave emitter 10C comprising a THz wave
Source 11, one is placed in the modulating device 12, a rotating device 13, a vacuum tank of 111 side of exit facet of the Terahertz wave source 11
14 and a heating device 15.
The THz wave emitter 10C that the embodiment of the present invention 5 provides is sent out with the THz wave that the embodiment of the present invention 1 provides
10 structure of injection device is essentially identical, and difference lies in further comprise rotating device 13, vacuum tank 14 and a heating device
15.It is appreciated that the THz wave emitter 10C that the embodiment of the present invention 5 provides is the technical side of embodiment 3 and embodiment 4
The combination of case.Specifically, the rotating device 13 is connect with the Terahertz wave source 11, to make the Terahertz wave source 11 revolve
Turn.
Embodiment 6
Figure 25 is please referred to, the embodiment of the present invention 6 provides a kind of THz wave communication device 10D comprising a THz wave
Source 11, one is placed in the modulating device 12, a rotating device 13, a THz wave of 111 side of exit facet of the Terahertz wave source 11
Reception device 16, one decrypts device 17 and an encryption device 18.The Terahertz wave source 11 emits THz wave, the modulation
Device 12 is modulated the THz wave, the encryption device 18 by the rotating device 13 to the THz wave into
Row encryption.The data of the THz wave are sent to described by the THz wave reception device 16 for receiving THz wave
Decrypt device 17.The data of THz wave of the decryption device 17 to receiving are decrypted.
Referring to Figure 13 as it can be seen that when the rotating device 13 rotates the carbon nano tube structure 121 according to certain rule, institute
The penetrance for stating THz wave changes according to certain rule.Therefore, the rotation regulation of the rotating device 13 and the Terahertz
The permeability variations rule of wave corresponds to.When the rotation regulation using the rotating device 13 represents different signals, pass through meter
The permeability variations rule of the THz wave received, you can obtain the signal that the THz wave is transmitted.The rotating dress
Setting 13 rotation regulation can design as needed, for example, rotation angle is at equal intervals from small to large, rotation angle at equal intervals from greatly to
The variation of small or rotation angle unequal interval.As long as in short, there is certain rule.Rule is more complicated, and confidentiality is better.It is described to add
Close device 18 is connect with the rotating device 13, is the control computer of the rotating device 13.
Referring to embodiment 3 it is found that the rotating device 13 act as adjusting carbon nanometer in the carbon nano tube structure 121
The angle of the extending direction and terahertz polarization direction of pipe, accordingly it is also possible to by the rotating device 13 be set to it is described too
On hertz wave source 11.The permeability variations rule of the THz wave is corresponding with the changing rule of the angle.
The THz wave reception device 16 can be THz wave intensity detecting device, to obtain the Terahertz received
The intensity data of wave, and the intensity data is sent to the decryption device 17.
Figure 26 is please referred to, the decryption device 17 is a computer comprising a control module 171, a computing module
172, a comparison module 173, a communication module 174 and a memory module 175.The control module 171 controls entire decryption
The operation of device 17.The communication module 174 between the THz wave reception device 16 for being communicated, to obtain
State the intensity data for the THz wave that THz wave reception device 16 receives.175 storage inside of the memory module has described
The raw intensity data and code book for the THz wave that Terahertz wave source 11 emits.The code book includes the Terahertz
Correspondence between the permeability variations rule of wave and its signal transmitted.The computing module 172 is received according to described
The intensity data of THz wave and the raw intensity data of THz wave of storage can calculate the penetrance of THz wave.
The comparison module 173 determines its signal transmitted according to the permeability variations rule and code book of calculated THz wave.
The embodiment of the present invention 6 further provides for a kind of method communicated using Terahertz modulating wave, and this method includes
Following steps：
Step S61 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S62 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched through formation Terahertz modulating wave after the carbon nano tube structure 121, wherein
The carbon nano tube structure 121 includes multiple carbon nanotubes for orienting extension in the same direction；
Step S63, the folder of extending direction and terahertz polarization direction by regularly changing the carbon nanotube
The Terahertz modulating wave is encrypted in angle；
Step S64 receives encrypted Terahertz modulating wave using a THz wave reception device 16, and described in calculating too
The penetrance of Hertz wave；And
Step S65 carries out the encrypted Terahertz modulating wave according to the permeability variations rule of the THz wave
Decryption.
Since THz wave becomes apparent in far infrared band than the Wave crest and wave trough Alternate Phenomenon in middle infrared band, this reality
Applying example preferably uses wave-length coverage to be communicated for 15 microns~300 microns of THz wave.Due to THz wave detection and
Modulate it is relatively difficult, therefore, the present invention using THz wave the means of communication it is safer.
Embodiment 7
Figure 27 is please referred to, the embodiment of the present invention 7 provides a kind of THz wave communication device 10E comprising a THz wave
Source 11, one is placed in the modulating device 12, a vacuum tank 14, a heating device of 111 side of exit facet of the Terahertz wave source 11
15, a THz wave reception device 16, one decryption device 17 and an encryption device 18.The Terahertz wave source 11 emits terahertz
Hereby wave, the modulating device 12 are modulated the THz wave, and the encryption device 18 is right by the heating device 15
The THz wave is encrypted.The THz wave reception device 16 is for receiving THz wave, and by the THz wave
Data are sent to the decryption device 17.The data of THz wave of the decryption device 17 to receiving are decrypted.
The THz wave that the communication device 10E for the THz wave that the embodiment of the present invention 7 provides is provided with the embodiment of the present invention 6
Communication device 10D structures it is essentially identical, difference lies in, the embodiment of the present invention 7 using the heating device 15 to it is described too
Hertz wave is encrypted.
Referring to Figure 21-23, as temperature increases, the penetrance of THz wave is gradually reduced, and this it appears that wave
Spike paddy Alternate Phenomenon.In addition, being in amplification trend as temperature increases Wave crest and wave trough Alternate Phenomenon, some are very weak under no-voltage
Or the feature that do not see, tend under high voltages apparent.That is, the penetrance of the THz wave and the carbon nanometer
The temperature of pipe structure 121 has correspondence.As long as the regular heating carbon nano tube structure 121, the THz wave
Penetrance can also change according to certain rule.Therefore, the carbon nano tube structure 121 is heated by regular, you can right
The THz wave is encrypted.
Due to the running parameter of the temperature and the heating device 15 of the carbon nano tube structure 121, such as power or electricity
It is pressed with pass, as long as the regular running parameter for adjusting the heating device 15, you can the THz wave is encrypted.This
In embodiment, the carbon nano tube structure 121 is heated using Joule heat principle, heating temperature is related with the voltage of application, therefore,
As long as regular adjust the voltage applied, you can the THz wave is encrypted.
Alternatively, it is also possible to which a temperature sensor (not shown) is arranged in the vacuum tank 14, pass through the temperature sensing
Device obtains the temperature of the carbon nano tube structure 121, to adjust the carbon nanometer by the way that the heating device 15 is regular
The temperature of pipe structure 121.The heating temperature is less than 500 degrees Celsius.Preferably, the heating temperature is less than 350 in an atmosphere
Degree Celsius, to prevent the carbon nano tube structure 121 from being aoxidized.
The embodiment of the present invention 7 further provides for a kind of method communicated using Terahertz modulating wave, and this method includes
Following steps：
Step S71 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S72 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched through formation Terahertz modulating wave after the carbon nano tube structure 121, wherein
The carbon nano tube structure 121 includes multiple carbon nanotubes for orienting extension in the same direction；
Step S73 adds the Terahertz modulating wave by regularly heating the carbon nano tube structure 121
It is close；
Step S74 receives encrypted Terahertz modulating wave using a THz wave reception device 16, and described in calculating too
The penetrance of Hertz wave；And
Step S75 carries out the encrypted Terahertz modulating wave according to the permeability variations rule of the THz wave
Decryption.
Embodiment 8
Figure 28 is please referred to, the embodiment of the present invention 8 provides a kind of THz wave communication device 10F comprising a THz wave
Source 11, one is placed in the modulating device 12, a rotating device 13, a vacuum tank of 111 side of exit facet of the Terahertz wave source 11
14, a heating device 15, a THz wave reception device 16, one decryption device 17 and an encryption device 18.
The encryption device 18 is connect with the rotating device 13 and heating device 15 respectively, passes through the rotating device 13
The THz wave is encrypted with heating device 15.The THz wave communication device 10F of the embodiment of the present invention 8 practical is real
Apply the combination of the technical solution of example 6 and 7.It is appreciated that in the present embodiment, the changing rule of the penetrance of the THz wave is
The superposition of the changing rule of the penetrance of THz wave described in embodiment 6 and 7.Due to by the folded of two different changing rules
Add, further improves the safety of communication.
The embodiment of the present invention 8 further provides for a kind of method communicated using Terahertz modulating wave, and this method includes
Following steps：
Step S81 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S82 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched through formation Terahertz modulating wave after the carbon nano tube structure 121, wherein
The carbon nano tube structure 121 includes multiple carbon nanotubes for orienting extension in the same direction；
Step S83 is received by regularly heating the carbon nano tube structure 121 simultaneously and regularly changing the carbon
The Terahertz modulating wave is encrypted in the angle of the extending direction and terahertz polarization direction of mitron；
Step S84 receives encrypted Terahertz modulating wave using a THz wave reception device 16, and described in calculating too
The penetrance of Hertz wave；And
Step S85 carries out the encrypted Terahertz modulating wave according to the permeability variations rule of the THz wave
Decryption.
Embodiment 9
Figure 29 is please referred to, the embodiment of the present invention 9 provides a kind of THz wave communication device 10G comprising a THz wave
Source 11, one is placed in the modulating device 12 of 111 side of exit facet of the Terahertz wave source 11, a THz wave reception device 16, one
Decrypt device 17 and an encryption device 18.The Terahertz wave source 11 emits THz wave, and the modulating device 12 is to described
THz wave is modulated, and the encryption device 18 is connect with the Terahertz wave source 11, for being carried out to the THz wave
Encryption.The data of the THz wave are sent to the solution by the THz wave reception device 16 for receiving THz wave
Close device 17.The data of THz wave of the decryption device 17 to receiving are decrypted.
The terahertz that the communication device 10G for the THz wave that the embodiment of the present invention 9 provides is provided with the embodiment of the present invention 6 or 7
Hereby communication device 10D, 10E structure of wave is essentially identical, and difference lies in the embodiment of the present invention 9 is direct using encryption device 18
The Terahertz wave source 11 is controlled, to which the THz wave be encrypted.Therefore, the embodiment of the present invention 9 can be omitted institute
State heating device 15 and the rotating device 13.It is appreciated that the embodiment of the present invention 9 can also further comprise the heating dress
15 and/or the rotating device 13 are set, to by by the superposition of two or three different changing rules, further improving
The safety of communication.
Specifically, in the present embodiment, by control the wave-length coverage of the THz wave that the Terahertz wave source 11 emits with
The rule of time realizes the encryption to THz wave.Referring to Fig. 6 as it can be seen that being 15 microns~300 microns remote red in wave-length coverage
Wave section, the penetrance of THz wave are in Wave crest and wave trough Alternate Phenomenon, moreover, the waveform of adjacent wave crest or trough not phase
Together.For example, when single-layer carbon nano-tube film is horizontally disposed, four wave crests correspond to wave-number range and are respectively：600~525,475~
300,250~200,150~60, and three troughs correspond to wave-number range respectively is：525~475,300~250,200~150.
Different symbols is represented using different wave crest or trough, can obtain 7 different symbols, for example, number 1,2,3,4,5,6,
7.As long as these wave crests or trough are combined according to time interval is regular, so that it may to realize the encryption to THz wave.Example
Such as, with every five seconds for example for a period, one of wave crest or trough are sent in each period, in 1 minute, so that it may with
Number between 20 regular wave crests or trough, such as 20 1~7.It is appreciated that when single-layered carbon nanotube periosteum is hung down
Wave crest or trough when straight setting are also counted in, and the far infrared band for being 15 microns~300 microns in wave-length coverage is equivalent to, can be with
Obtain 14 wave crests or trough, that is, 14 different symbols.
The embodiment of the present invention 9 further provides for a kind of method communicated using Terahertz modulating wave, and this method includes
Following steps：
Step S91 provides a Terahertz wave source 11, and the Terahertz wave source 11 excitation is made to generate THz wave；
Step S92 is arranged a carbon nano tube structure 121 in 111 side of exit facet of the Terahertz wave source 11, makes this too
The THz wave that hertz wave source 11 generates is launched through formation Terahertz modulating wave after the carbon nano tube structure 121, wherein
The carbon nano tube structure 121 includes multiple carbon nanotubes for orienting extension in the same direction；
Step S93, by controlling the rule of the wave-length coverage for the THz wave that the Terahertz wave source 11 emits at any time,
The Terahertz modulating wave is encrypted；
Step S94 receives encrypted Terahertz modulating wave using a THz wave reception device 16, and described in calculating too
The penetrance of Hertz wave；And
Step S95 carries out the encrypted Terahertz modulating wave according to the permeability variations rule of the THz wave
Decryption.
Embodiment 10
Figure 30 is please referred to, the embodiment of the present invention 10 provides a kind of THz wave wavelength detecting device 10H comprising a terahertz
Mobile device 20 that hereby wave receiving device 16, a modulating device 12, one are connect with the modulating device 12 and one with the Terahertz
The computer 19 that wave receiving device 16 connects.
The mobile device 20 allows the modulating device 12 to be set to the Terahertz for controlling the modulating device 12
On the plane of incidence 161 of wave receiving device 16, or deviate the plane of incidence 161.The mobile device 20 can be drawing device or rotation
Rotary device.When the modulating device 12 is set on the plane of incidence 161 of the THz wave reception device 16, the carbon nanotube
Structure 121 can contact setting or setting spaced apart with the plane of incidence 161, as long as ensuring detected THz wave
It can only could enter the THz wave reception device 16 from the plane of incidence 161 after through the carbon nano tube structure 121.
When the modulating device 12 deviates the plane of incidence 161, detected THz wave directly can enter the terahertz from the plane of incidence 161
Hereby wave receiving device 16.At this point, the THz wave reception device 16 detects the last the first of the detected THz wave
Degrees of data, and first intensity data is sent to the computer 19.When the modulating device 12 is set to the THz wave
When on the plane of incidence 161 of reception device 16, detected THz wave can only be after through the carbon nano tube structure 121
The THz wave reception device 16 can be entered from the plane of incidence 161.At this point, the THz wave reception device 16 detects the quilt
Second intensity data of the THz wave of detection, and second intensity data is sent to the computer 19.
Please refer to Figure 31, the computer 19 include a control module 191, a computing module 192, a comparison module 193,
One communication module 194 and a memory module 195.The control module 191 controls the operation of entire computer 19.The communication
Module 194 between the THz wave reception device 16 for being communicated, to obtain the THz wave reception device 16
The intensity data of the THz wave received.195 storage inside of the memory module is penetrated just like THz wave shown in Fig. 6-7
The relation data of rate and wave number.The computing module 192 can be calculated according to second intensity data and the first intensity data
The penetrance curve of detected THz wave.The comparison module 193 is by carrying out the data of penetrance curve and Fig. 6-7
It compares, you can obtain the wave-length coverage of the detected THz wave.As seen from Figure 6, the THz wave pair of different wavelength range
Answer different penetrance curves.The correspondence is especially apparent in far infrared band.Therefore, the computer 19 will be by that will be detected
The penetrance curve of the THz wave of survey is compared with the data of Fig. 6-7, you can obtains the wave of the detected THz wave
Long range.
The embodiment of the present invention 10 further provides for a kind of THz wave wavelength detecting method, and this approach includes the following steps：
Step S101 makes detected THz wave be directly incident in the THz wave reception device 16, the terahertz
Hereby wave receiving device 16 detects the first intensity data of the detected THz wave；
Step S102 makes detected THz wave be incident on the Terahertz later through the carbon nano tube structure 121
On wave receiving device 16, the THz wave reception device 16 detects the second intensity number of the detected THz wave
According to；
Step S103 calculates penetrating for detected THz wave according to second intensity data and the first intensity data
Rate curve；And
Step S104 obtains the detected THz wave by the way that one normal data of penetrance curve to be compared
Wave-length coverage, wherein the normal data includes THz wave to the penetrance of the carbon nano tube structure 121 and the pass of wavelength
System.
Embodiment 11
Figure 32 is please referred to, the embodiment of the present invention 11 provides a kind of THz wave wavelength detecting device 10I comprising a terahertz
The rotating device 13 that hereby wave receiving device 16, a modulating device 12, one are connect with the modulating device 12, one with the modulating device 12
The computer 19 that the mobile device 20 and one of connection is connect with the THz wave reception device 16.
The terahertz that the THz wave wavelength detecting device 10I that the embodiment of the present invention 11 provides is provided with the embodiment of the present invention 10
Hereby wave wavelength detecting device 10H structures are essentially identical, and difference lies in further comprise a rotating device 13.The rotating dress
13 are set for controlling the modulating device 12, allows the modulating device 12 in the plane where the carbon nano tube structure 121
Interior rotation, to change the folder of the extending direction of carbon nanotube and terahertz polarization direction in the carbon nano tube structure 121
Angle.At this point, the THz wave reception device 16 detect the detected THz wave different angles under third
Intensity data.Wired or wireless connection between the rotating device 13 and the computer 19 so that the computer 19 can be with
Obtain the rotation angle of the rotating device 13.
THz wave penetrance as shown in fig. 13 that and wave number and institute are further stored with inside the memory module 195
State the relation data of the extending direction of carbon nanotube and the angle in terahertz polarization direction in carbon nano tube structure 121.It is described
Computing module 192 can be counted according to the rotation angle of the third intensity data, the first intensity data and the rotating device 13
Calculate the correspondence of the penetrance curve of detected THz wave and the rotation angle of the rotating device 13.The comparison
Module 193 is by comparing penetrance curve and the correspondence of the rotation angle of the rotating device 13 and the data of Figure 13
It is right, you can to obtain the wave-length coverage of the detected THz wave.
The embodiment of the present invention 11 further provides for a kind of THz wave wavelength detecting method, and this approach includes the following steps：
Step S111 makes detected THz wave be directly incident in the THz wave reception device 16, the terahertz
Hereby wave receiving device 16 detects the first intensity data of the detected THz wave；
Step S112 makes detected THz wave be incident on the Terahertz later through the carbon nano tube structure 121
On wave receiving device 16, the extending direction and terahertz polarization of carbon nanotube in the carbon nano tube structure 121 are changed simultaneously
The angle in direction, the THz wave reception device 16 detect the detected THz wave different angles under
Three intensity datas；
Step S113 receives according to carbon in the third intensity data, the first intensity data and the carbon nano tube structure 121
The extending direction of mitron goes out penetrance curve and the institute of detected THz wave with the angle calcu-lation in terahertz polarization direction
State the relational graph of the extending direction of carbon nanotube and the angle in terahertz polarization direction in carbon nano tube structure 121；And
Step S114, by by the extending direction of carbon nanotube in penetrance curve and the carbon nano tube structure 121 with
The relationship of the angle in terahertz polarization direction is compared with a normal data, obtains the wavelength of the detected THz wave
Range, wherein the normal data includes penetrance and wavelength and the carbon of the THz wave to the carbon nano tube structure 121
The relationship of the extending direction of carbon nanotube and the angle in terahertz polarization direction in nano tube structure 121.
Embodiment 12
Figure 33 is please referred to, the embodiment of the present invention 12 provides a kind of THz wave wavelength detecting device 10I comprising a terahertz
Hereby wave receiving device 16, a modulating device 12, a vacuum tank 14, a heating device 15, one connect with the modulating device 12
The computer 19 that mobile device 20 and one is connect with the THz wave reception device 16.
The terahertz that the THz wave wavelength detecting device 10I that the embodiment of the present invention 12 provides is provided with the embodiment of the present invention 10
Hereby wave wavelength detecting device 10H structures are essentially identical, and difference lies in further comprise the vacuum tank 14 and heating device
15.The heating device 15 is for heating the carbon nano tube structure 121, to change the temperature of the carbon nano tube structure 121
Degree.At this point, the THz wave reception device 16 detect the detected THz wave different temperatures under the 4th
Intensity data.Wired or wireless connection between the heating device 15 and the computer 19 so that the computer 19 can be with
Obtain the heating voltage of the heating device 15.
Further be stored with inside the memory module 195 THz wave penetrance as shown in figures 21-23 and wave number with
And the relation data of the heating voltage (temperature of the carbon nano tube structure 121) of the heating device 15.The computing module
192 according to heating voltage (the carbon nanotube knot of the 4th intensity data, the first intensity data and the heating device 15
The temperature of structure 121) can calculate detected THz wave penetrance curve and the heating device 15 heating voltage
The correspondence of (temperature of the carbon nano tube structure 121).The comparison module 193 is by adding penetrance curve with described
The data of the correspondence and Figure 21-23 of the heating voltage (temperature of the carbon nano tube structure 121) of thermal 15 are compared
It is right, you can to obtain the wave-length coverage of the detected THz wave.
It is appreciated that when using special heating device 15, a temperature-sensitive sticker (not shown), the carbon nanotube knot are needed
Structure 121 and temperature-sensitive sticker are set in the vacuum tank 14, and the heating device 15 is for heating the carbon nano tube structure
121, to change the temperature of the carbon nano tube structure 121.195 storage inside of the memory module has THz wave to the carbon
The penetrance of nano tube structure 121 is with the relation data of wave number and the temperature of the carbon nano tube structure 121 as criterion numeral
According to.
The embodiment of the present invention 12 further provides for a kind of THz wave wavelength detecting method, and this approach includes the following steps：
Step S121 makes detected THz wave be directly incident in the THz wave reception device 16, the terahertz
Hereby wave receiving device 16 detects the first intensity data of the detected THz wave；
Step S122 makes detected THz wave be incident on the Terahertz later through the carbon nano tube structure 121
On wave receiving device 16, while the temperature for changing the carbon nano tube structure 121 is heated, the THz wave reception device 16 is examined
Measure the detected THz wave different temperatures under the 4th intensity data；
Step S123, according to the temperature of the 4th intensity data, the first intensity data and the carbon nano tube structure 121
Calculate the relational graph of the penetrance curve of detected THz wave and the temperature of the carbon nano tube structure 121；And
Step S124, by by the relationship of penetrance curve and the temperature of the carbon nano tube structure 121 and a criterion numeral
According to being compared, the wave-length coverage of the detected THz wave is obtained, wherein the normal data includes THz wave to described
The relationship of the penetrance of carbon nano tube structure 121 and the temperature of wavelength and the carbon nano tube structure 121.
Embodiment 13
Figure 34 is please referred to, the embodiment of the present invention 13 provides a kind of THz wave wavelength detecting device 10J comprising a terahertz
Hereby wave receiving device 16, a modulating device 12, a rotating device 13, a vacuum tank 14, a heating device 15, one with the modulation
The computer 19 that the mobile device 20 and one that device 12 connects is connect with the THz wave reception device 16.
The terahertz that the THz wave wavelength detecting device 10J that the embodiment of the present invention 13 provides is provided with the embodiment of the present invention 10
Hereby wave wavelength detecting device 10H structures are essentially identical, and difference lies in further comprise the rotating device 13, vacuum tank 14
And heating device 15.
It is appreciated that the THz wave wavelength detecting device 10J that the embodiment of the present invention 13 provides incorporates implementation of the present invention
All technical solutions of example 10-12.The working method for the THz wave wavelength detecting device 10J that the embodiment of the present invention 13 provides can
Think any one in the working method of 10-12 of the embodiment of the present invention.
In addition, those skilled in the art can also do other variations in spirit of that invention, these are spiritual according to the present invention
The variation done should be all included in scope of the present invention.
Claims (10)
1. a kind of THz wave wavelength detecting method comprising following steps：
Detected THz wave is set to be directly incident in the THz wave reception device, the THz wave reception device detection
To the first intensity data of the detected THz wave；
Make detected THz wave through being incident in the THz wave reception device after a carbon nano tube structure, it is described too
Hertz wave receiving device detects the second intensity data of the detected THz wave；
The penetrance curve of detected THz wave is calculated according to second intensity data and the first intensity data；And
By the way that one normal data of penetrance curve to be compared, the wave-length coverage of the detected THz wave is obtained, wherein
The normal data includes THz wave to the penetrance of the carbon nano tube structure and the relation data of wave number.
2. THz wave wavelength detecting method as described in claim 1, which is characterized in that the carbon nano tube structure includes one
Carbon nano-tube film, the carbon nano-tube film include multiple by the end to end carbon nano-tube bundle of Van der Waals force, each carbon nanometer
Tube bank includes multiple carbon nanotubes being mutually parallel.
3. THz wave wavelength detecting method as described in claim 1, which is characterized in that the surface of the multiple carbon nanotube
It is coated with metal conducting layer.
4. THz wave wavelength detecting method as described in claim 1, which is characterized in that the edge of the carbon nano tube structure
It is fixed in a braced frame, middle section is vacantly arranged by the braced frame.
5. THz wave wavelength detecting method as described in claim 1, which is characterized in that described to make detected THz wave
Further comprise while through carbon nano tube structure：Change in the carbon nano tube structure extending direction of carbon nanotube with too
The angle of Hertz wave polarization direction；The normal data include THz wave to the penetrance of the carbon nano tube structure and wave number and
The relation data of the extending direction of carbon nanotube and the angle in terahertz polarization direction in the carbon nano tube structure.
6. THz wave wavelength detecting method as claimed in claim 5, which is characterized in that in the change carbon nano tube structure
The method of the extending direction of carbon nanotube and the angle in terahertz polarization direction is to rotate the carbon nano tube structure.
7. THz wave wavelength detecting method as described in claim 1, which is characterized in that described to make detected THz wave
Further comprise while through carbon nano tube structure：The carbon nano tube structure is heated, and measures the carbon nano tube structure
Temperature；The normal data includes penetrance and wave number and the carbon nanotube knot of the THz wave to the carbon nano tube structure
The relation data of the temperature of structure.
8. THz wave wavelength detecting method as described in claim 1, which is characterized in that described to make detected THz wave
Further comprise while through carbon nano tube structure：Apply voltage to the carbon nano tube structure both ends；The normal data packet
Include penetrance and wave number and the pass of the voltage that the carbon nano tube structure applies of the THz wave to the carbon nano tube structure
Coefficient evidence.
9. THz wave wavelength detecting method as described in claim 1, which is characterized in that described to make detected THz wave
Further comprise while through carbon nano tube structure：Rotate and heat the carbon nano tube structure；The normal data includes terahertz
Hereby penetrance and wave number and the temperature of the carbon nano tube structure and the relationship of rotation angle of the wave to the carbon nano tube structure
Data.
10. the THz wave wavelength detecting method as described in any one of claim 7-9, which is characterized in that the carbon is received
Nanotube structures are vacantly set in a vacuum tank.
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| TW201840079A (en) | 2018-11-01 |
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