CN108728689A - A kind of CuCrZrAl copper plate of crystallizer base material and its processing method for electromagnetic agitation - Google Patents
A kind of CuCrZrAl copper plate of crystallizer base material and its processing method for electromagnetic agitation Download PDFInfo
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- CN108728689A CN108728689A CN201810743373.6A CN201810743373A CN108728689A CN 108728689 A CN108728689 A CN 108728689A CN 201810743373 A CN201810743373 A CN 201810743373A CN 108728689 A CN108728689 A CN 108728689A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/04—Continuous casting of metals, i.e. casting in indefinite lengths into open-ended moulds
- B22D11/059—Mould materials or platings
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Abstract
The present invention relates to a kind of CuCrZrAl copper plate of crystallizer base materials and its processing method for electromagnetic agitation, belong to copper alloy technical field.It includes the Mg of the Al and 0.02-0.05wt% of Zr, 0.3-0.7wt% of Cr, 0.08-0.2wt% of Cu, 0.4-1.2wt% of 97.85-99.1wt%.It both can guarantee that the mechanical performance needed for copper plate of crystallizer, thermal conductivity declined few, meet heat exchange, and meet requirement of the continuous casting to electromagnetic agitation.Processing method includes：Alloy material is subjected to vacuum melting, vacuum-casting, hot forging, solid solution, flow harden and ageing treatment.This method is simple and convenient, is readily produced, the material produced through this method can proof strength, with good thermal conductivity, be provided simultaneously with smaller magnetic resistance, have stronger electromagnetic agitation ability.
Description
Technical field
The present invention relates to copper alloy technical fields, and more particularly to a kind of CuCrZrAl crystallizer coppers for electromagnetic agitation
Plate base material and its processing method.
Background technology
With the development of continuous casting, the crystallizer copper plate blank material material of continuous casting has：CuAg, CuCr, CuCrZr etc. are crystallizations
The main material of device copper coin blank respectively has advantage and disadvantage, but these materials, in the environment for electromagnetic agitation, shielding action is big,
Magnetic resistance is all bigger, and electromagnetism is weaker through the ability of copper plate of crystallizer, and the stirring capacity that the molten steel inside crystallizer obtains is weak, shape
At steel billet segregation it is more serious, obtained steel mechanics performance is not high enough, cannot obtain high-quality steel.
Invention content
A kind of copper plate of crystallizer material that the purpose of the present invention is to provide a kind of conductivity within the scope of 45-55%IACS,
Meanwhile intensity is not less than the intensity of usual copper plate of crystallizer material.The copper plate of crystallizer material can proof strength, have it is good
Thermal conductivity, be provided simultaneously with smaller magnetic resistance, have stronger electromagnetic agitation ability.
The present invention solves its technical problem using following technical scheme to realize：
The present invention proposes a kind of CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation comprising following chemistry at
Point：The Al of Zr, 0.3-0.7wt% of Cr, 0.08-0.2wt% of Cu, 0.4-1.2wt% of 97.85-99.1wt% and
The Mg of 0.02-0.05wt%.
Above-mentioned CuCrZrAl copper plate of crystallizer base material adds Al elements, shape based on CuCrZr copper plate of crystallizer materials
At a kind of CuCrZrAl materials, while wherein also including deoxidant element Mg.
The present invention also proposes a kind of processing method of the above-mentioned CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation, packet
Include following steps：
Mixing provides the alloy material of Cu, Cr, Zr, Al and Mg, then carries out vacuum melting, vacuum-casting, hot forging, consolidates
Molten, flow harden and ageing treatment.
Present pre-ferred embodiments provide for the CuCrZrAl copper plate of crystallizer base material of electromagnetic agitation and its processing side
The advantageous effect of method includes：
In the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation that present pre-ferred embodiments provide, Cr and Zr are
It can be solid-solution in Cu, solubility is all smaller, wherein the maximum solid solution degree that Cr maximum solid solution degrees are 0.65%, Zr is 0.15%, two
Solid solubility of the element in Cu declines with temperature and drastically reduces, the Cr and Zr being added in copper, quenches to form metastable state through high temperature
Supersaturated solid solution, then by ageing treatment, supersaturated solid solution is made to decompose, the second phase of diffusion-precipitation distribution, uniformly
It is distributed on matrix, uniformly distributed particle aligns offsetting movable property and gives birth to high resistance, and makes alloy strengthening.This reinforcing, the conjunction of addition
Gold is few, and invigoration effect is big, meanwhile, conductivity and thermal conductivity decline are small.
It is very fast that the addition of Al can be such that conductivity declines, and reduces screen effect, increases the electromagnetism of crystallizer interior liquid metal
Stirring action.It is comprehensive but also to can guarantee certain capacity of heat transmission as a result, not only can guarantee the intensity of copper plate of crystallizer, it protects simultaneously
Demonstrate,prove the electromagnetic agitation effect of crystallizer.
The addition of Mg primarily serves the deoxidation to liquid metal, fluxing effect, Grain refinement.It is in vacuum
Under the conditions of can prevent from aoxidizing, avoid consuming excessive deoxidier.
The CuCrZrAl copper plate of crystallizer base material for electromagnetic agitation that present pre-ferred embodiments provide both can guarantee knot
Mechanical performance needed for brilliant device copper coin, thermal conductivity decline few, meet heat exchange, and meet continuous casting and wanted to electromagnetic agitation
It asks.Its processing method is simple and convenient, is readily produced.The material produced through this method can proof strength, have and good lead
It is hot, be provided simultaneously with smaller magnetic resistance, have stronger electromagnetic agitation ability.
Specific implementation mode
It in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be in the embodiment of the present invention
Technical solution be clearly and completely described.The person that is not specified actual conditions in embodiment, builds according to normal condition or manufacturer
The condition of view carries out.Reagents or instruments used without specified manufacturer is the conventional production that can be obtained by commercially available purchase
Product.
Below to the CuCrZrAl copper plate of crystallizer base material and its processing method for electromagnetic agitation of the embodiment of the present invention
It is specifically described.
The CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation that the embodiment of the present invention is provided, include mainly with
Lower chemical composition：Zr, 0.3-0.7wt%'s of Cr, 0.08-0.2wt% of Cu, 0.4-1.2wt% of 97.85-99.1wt%
The Mg of Al and 0.02-0.05wt%.
In some preferred embodiments, it is used for the chemical composition of the CuCrZrAl copper plate of crystallizer base materials of electromagnetic agitation
Such as may include：Zr, 0.4-0.65wt% of Cr, 0.1-0.2wt% of Cu, 0.5-0.8wt% of 98.3-98.97wt%
Al and 0.03-0.05wt% Mg.
In above-mentioned chemical composition, Cr and Zr can be solid-solution in Cu, and solubility is all smaller, wherein Cr maximum solid solution degrees are
The maximum solid solution degree of 0.65%, Zr are 0.15%, and solid solubility of two kinds of elements in Cu declines with temperature and drastically reduce.In copper
The Cr and Zr of addition are quenched to form metastable state supersaturated solid solution through high temperature, then by ageing treatment, supersaturated solid solution are made to send out
Solution estranged, the second phase of diffusion-precipitation distribution, is uniformly distributed on matrix, and uniformly distributed particle aligns offsetting movable property and gives birth to very big resistance
Power, and make alloy strengthening.The alloy of this reinforcing, addition is few, and invigoration effect is big, meanwhile, conductivity and thermal conductivity decline are small.
Al is added in chemical composition, though copper coin conductivity is made to decline, greatly reduces crystallizer copper plate blank material
Magnetic resistance increases the ability that electromagnetism penetrates crystallizer copper plate blank material, the agitation of molten steel ability inside crystallizer is made to significantly increase, even
The steel billet segregation phenomena cast out is eliminated very well.Namely the addition of Al can be such that conductivity declines comparatively fast, reduce screen effect, increase
Add the function composite by electromagnetic stirring of crystallizer interior liquid metal.It is comprehensive as a result, not only can guarantee the intensity of copper plate of crystallizer, but also energy
Ensure certain capacity of heat transmission, while ensureing the electromagnetic agitation effect of crystallizer.
Further, the addition of Mg can play liquid metal deoxidation, fluxing effect and Grain refinement.
Tensile strength, hardness and the creep-resistant property of the above-mentioned CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation with
Chromium-zirconium-copper is suitable, but the appropriate reduction of conductivity, is conducive to the decaying for inhibiting high magnetic flux, adapts to steel mill's electromagnetic stirring equipment
Production requirement.
It is good that main difficulty due in the prior art, installing electromagnetic agitation at crystallizer is that the copper inner wall of crystallizer has
Good thermal conductance and electrical conductance generates prodigious eddy current, in addition magnetic field is horizontal when alternating magnetic field passes through crystallization wall in copper wall
Damping loss when copper wall is worn, keeps electric energy efficiency very low.And the CuCrZrAl crystallizers of electromagnetic agitation to be used in application scheme
Copper coin base material, which not only has, meets heat conductivility and high temperature and creep resistance ability, but also to have both conductivity relatively low, so as to increase
The penetration capacity of the magnetic line of force, magnetic flux decaying is smaller, and cost is relatively low, disclosure satisfy that M-EMS system just
It is often used.The MOLTEN STEEL FLOW formed by electromagnetic agitation in crystallizer, can make the nonmetal inclusion in dendrite float to bent moon
The nonmetal inclusion in face, floating is easily transferred in covering slag, is absorbed by covering slag.So that steel billet subsurface inclusion amount is reduced, reduces
The inclusion content of inside steel billet plays the role of purifying molten steel, removal nonmetal inclusion.
Ground, the processing method of above-mentioned CuCrZrAl copper plate of crystallizer base material are can refer to, such as may comprise steps of：
Mixing provides the alloy material of Cu, Cr, Zr, Al and Mg, then carries out vacuum melting, vacuum-casting, hot forging, consolidates
Molten, flow harden and ageing treatment.
Wherein, the vacuum degree of vacuum melting and vacuum-casting, which is respectively less than, is equal to 50Pa.
In some embodiments, the vacuum degree absolute pressure of vacuum melting can be 5-30Pa.The temperature of vacuum melting
It can be 1350-1410 DEG C.
In some way of example, argon-filled protection, the vacuum degree after argon filling can be carried out when being poured into a mould during vacuum-casting
Relative pressure can be -0.08MPa, and the pouring temperature of vacuum-casting can be 1250-1280 DEG C.
Dense structure can be obtained by above-mentioned vacuum melting and vacuum pouring condition, performance is stablized, high abrasion resistance
The CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation.
In some way of example, the initial forging temperature of hot forging can be 900-920 DEG C, and final forging temperature can be 600-
650 DEG C, hot forging heating time can be 2.5-3h.
Preferably, be hot-forged in hot forging process deformation direction for example can by elder generation along the long sequence to, rear through-thickness into
Row forges.Forging deformation amount for example can be 25-30mm.
By above-mentioned hot forging, the deformation direction of finish-forging temperature control and hot forging process, it is uniform structure property can be obtained
Copper plate of crystallizer base material.
In some way of example, the temperature of solid solution can be 800-900 DEG C, and the time of solid solution can be 1-2h.
The elements such as Cr, Zr can be made fully to be solid-solution in Copper substrate by above-mentioned solution treatment, obtain ingredient and performance
Uniform copper plate of crystallizer base material.
In some way of example, cold deformation rate can be 15-35%, the amount of rolling example under single during flow harden
Such as can be 1-2mm.
It can get the copper plate of crystallizer base material of higher hardness by above-mentioned flow harden.
In some way of example, ageing treatment can be that 3-5h is handled under conditions of 400-500 DEG C.
The solid solution being solid-solution in matrix can be made fully to be precipitated by ageing treatment, to obtain intensity and conductivity compared with
High copper plate of crystallizer base material.
It is worth noting that when admittedly molten, before the lower water of copper coin cooling, preferably cooling water temperature is controlled no more than 30
DEG C, copper coin is come out of the stove to Time Of Launching control in 1min.
By the water temperature for controlling cooling water and lower water speed, the alloy being solid-solution under high temperature in matrix can be made, had little time
It is precipitated, is substantially retained at intrinsic silicon, obtains more saturated solid solution and retain to room temperature, play the effect of solution strengthening.
Have for the CuCrZrAl copper plate of crystallizer base materials of electromagnetic agitation obtained by being processed through above-mentioned processing method and includes
Following performance：Mechanical property reaches：Tensile strength Rm≥390N/mm2；Yield strength Rp0.2≥275N/mm2；The contraction percentage of area
A >=20%；Hardness HB >=100；Softening temperature >=450 DEG C；45%IACS≤conductivity≤55%IACS.
The feature and performance of the present invention are described in further detail with reference to embodiments.
Embodiment 1
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.04wt% of Zr, 0.5wt% of Cr, 0.1wt% of Cu, 1.0wt% of 98.36wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 5Pa and refining temperature be 1410 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, it is true after argon filling
Reciprocal of duty cycle relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1250 DEG C.
It is hot-forged under conditions of initial forging temperature is 900 DEG C, final forging temperature is 600 DEG C.Deformation direction is hot-forged in hot forging process
It is forged by first pulling out, pulling out sequence that is wide and then protecting thickness again.
120min, water quenching are dissolved under conditions of 830 DEG C；Cold deformation rate is 20%.Under conditions of 430 DEG C at timeliness
Manage 4h.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=420N/mm2；Yield strength Rp0.2=290N/mm2；Contraction percentage of area A=25%；Hardness HB=118；Softening temperature=
480℃；Conductivity is 49%IACS.
Embodiment 2
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.02wt% of Zr, 0.42wt% of Cr, 0.15wt% of Cu, 0.55wt% of 97.85wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 30Pa and refining temperature be 1350 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, after argon filling
Vacuum degree relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1280 DEG C.
It is hot-forged under conditions of initial forging temperature is 920 DEG C, final forging temperature is 650 DEG C.Deformation direction is hot-forged in hot forging process
It is forged by first pulling out, pulling out sequence that is wide and then protecting thickness again.
80min, water quenching are dissolved under conditions of 860 DEG C；Cold deformation rate is 20%.Under conditions of 500 DEG C at timeliness
Manage 3h.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=410N/mm2；Yield strength Rp0.2=285N/mm2；Contraction percentage of area A=22%；Hardness HB=110；Softening temperature=
470℃；Conductivity is 55%IACS.
Embodiment 3
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.05wt% of Zr, 0.7wt% of Cr, 0.2wt% of Cu, 1.2wt% of 97.85wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 20Pa and refining temperature be 1400 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, after argon filling
Vacuum degree relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1260 DEG C.
It is hot-forged under conditions of initial forging temperature is 910 DEG C, final forging temperature is 620 DEG C.Deformation direction is hot-forged in hot forging process
It is forged by first pulling out, pulling out sequence that is wide and then protecting thickness again.
60min, water quenching are dissolved under conditions of 800 DEG C；Cold deformation rate is 15%.Under conditions of 400 DEG C at timeliness
Manage 5h.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=430N/mm2；Yield strength Rp0.2=310N/mm2；Contraction percentage of area A=24%；Hardness HB=120；Softening temperature=
490℃；Conductivity is 36%IACS.
Embodiment 4
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.02wt% of Zr, 0.3wt% of Cr, 0.08wt% of Cu, 0.4wt% of 99.1wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 25Pa and refining temperature be 1380 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, after argon filling
Vacuum degree relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1270 DEG C.
It is hot-forged 2.8h under conditions of initial forging temperature is 910 DEG C, final forging temperature is 640 DEG C.Deformation is hot-forged in hot forging process
Direction is by first along long to the sequence of rear through-thickness is forged.Forging deformation amount is 28mm.
90min, water quenching are dissolved under conditions of 900 DEG C；Cold deformation rate is 35%, and the amount of rolling is 1.5mm under single.In
Ageing treatment 4h under conditions of 450 DEG C.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=405N/mm2；Yield strength Rp0.2=280N/mm2；Contraction percentage of area A=24%；Hardness HB=110；Softening temperature=
470℃；Conductivity is 65%IACS.
Embodiment 5
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.05wt% of Zr, 0.65wt% of Cr, 0.2wt% of Cu, 0.75wt% of 98.3wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 25Pa and refining temperature be 1400 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, after argon filling
Vacuum degree relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1260 DEG C.
Under conditions of initial forging temperature is 905 DEG C, final forging temperature is 620 DEG C.Deformation direction is hot-forged in hot forging process by first
Pulling is pulled out sequence that is wide and then protecting thickness and is forged again.
90min, water quenching are dissolved under conditions of 850 DEG C；Cold deformation rate is 20%.Under conditions of 400 DEG C at timeliness
Manage 4h.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=425N/mm2；Yield strength Rp0.2=315N/mm2；Contraction percentage of area A=25%；Hardness HB=125；Softening temperature=
500℃；Conductivity is 40%IACS.
Embodiment 6
The chemical composition of the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in the present embodiment contains
The Mg of the Al and 0.03wt% of Zr, 0.4wt% of Cr, 0.1wt% of Cu, 0.5wt% of 98.97wt%.
Its processing method includes：Mixing provides the alloy material of above-mentioned Cu, Cr, Zr, Al and Mg, in vacuum degree absolute pressure
Power be 15Pa and refining temperature be 1380 DEG C under conditions of carry out vacuum melting.Argon-filled protection is carried out when cast, after argon filling
Vacuum degree relative pressure is -0.08MPa, and vacuum-casting is carried out under conditions of 1270 DEG C.
Under conditions of initial forging temperature is 915 DEG C, final forging temperature is 640 DEG C.Deformation direction is hot-forged in hot forging process by first
Pulling is pulled out sequence that is wide and then protecting thickness and is forged again.
90min, water quenching are dissolved under conditions of 850 DEG C；Cold deformation rate is 25%, and the amount of rolling is 1mm under single.In 500
Ageing treatment 3h under conditions of DEG C.
The physicochemical property of the thus obtained CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation includes：Tensile strength
Rm=400N/mm2；Yield strength Rp0.2=300N/mm2；Contraction percentage of area A=25%；Hardness HB=115；Softening temperature=
500℃；Conductivity is 55%IACS.
Comparative example
By taking embodiment 1 as an example, comparative example 1-5 is set, and comparative example 1-5 and the difference of embodiment 1 are respectively：Comparative example 1
The CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation in Al content be 0.05wt%；Comparative example 2 is used for electromagnetism
The content of Al is 0.1wt% in the CuCrZrAl copper plate of crystallizer base materials of stirring；Comparative example 3 for electromagnetic agitation
The content of Al is 0.15wt% in CuCrZrAl copper plate of crystallizer base materials；The CuCrZrAl for electromagnetic agitation of comparative example 4 is tied
The content of Al is 1wt% in brilliant device copper coin base material；In the CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation of comparative example 5
The content of Al is 1.2wt%.
Using identical test method, result is shown：The CuCrZrAl copper plate of crystallizer base material of comparative example 1-5 is relatively implemented
The physicochemical property of the CuCrZrAl copper plate of crystallizer base materials of example 1 is worse, is embodied in：
The conductivity of the CuCrZrAl copper plate of crystallizer base materials of comparative example 1 is 75%IACS.
The conductivity of the CuCrZrAl copper plate of crystallizer base materials of comparative example 2 is 72%IACS.
The conductivity of the CuCrZrAl copper plate of crystallizer base materials of comparative example 3 is 68%IACS.
The conductivity of the CuCrZrAl copper plate of crystallizer base materials of comparative example 4 is 35%IACS.
The conductivity of the CuCrZrAl copper plate of crystallizer base materials of comparative example 5 is 32%IACS.
In addition, in the manner described above with regard to embodiment 2-6 difference, comparison only comparative example and implementation when Al content changes
Example gained CuCrZrAl copper plate of crystallizer base materials performance, specifically, Al content be respectively 0.05wt%, 0.1wt%,
0.15wt%, 1wt% and 1.2wt%.It is the results show that whichever embodiment, embodiment change compared with Al content
The conductivity of CuCrZrAl copper plate of crystallizer base materials obtained by comparative example afterwards more meets the requirement of electromagnetic agitation.
As seen from the above, the content of Al has larger impact to its performance in CuCrZrAl copper plate of crystallizer base material.
To sum up, the CuCrZrAl copper plate of crystallizer base material for electromagnetic agitation that present pre-ferred embodiments provide can be protected
The mechanical performance needed for copper plate of crystallizer is demonstrate,proved, thermal conductivity declines few, meets heat exchange, and meet continuous casting to electromagnetic agitation
It is required that.The processing method provided is simple and convenient, is readily produced, the material produced through this method can proof strength, have
Good thermal conductivity is provided simultaneously with smaller magnetic resistance, has stronger electromagnetic agitation ability.
Embodiments described above is a part of the embodiment of the present invention, instead of all the embodiments.The reality of the present invention
The detailed description for applying example is not intended to limit the range of claimed invention, but is merely representative of the selected implementation of the present invention
Example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
Claims (10)
1. a kind of CuCrZrAl copper plate of crystallizer base materials for electromagnetic agitation, which is characterized in that it includes following chemical composition：
The Al and 0.02- of Zr, 0.3-0.7wt% of Cr, 0.08-0.2wt% of Cu, 0.4-1.2wt% of 97.85-99.1wt%
The Mg of 0.05wt%.
2. CuCrZrAl copper plate of crystallizer base material according to claim 1, which is characterized in that the chemical composition includes：
Described Zr, 0.4-0.65wt%'s of described Cr, 0.1-0.2wt% of described Cu, 0.5-0.8wt% of 98.3-98.97wt%
The Mg of the Al and 0.03-0.05wt%.
3. a kind of processing method of CuCrZrAl copper plate of crystallizer base material as claimed in claim 1 or 2, which is characterized in that packet
Include following steps：
Mixing provides the alloy material of the Cu, the Cr, the Zr, the Al and the Mg, then carry out vacuum melting,
Vacuum-casting, hot forging, solid solution, flow harden and ageing treatment.
4. processing method according to claim 3, which is characterized in that the vacuum degree of vacuum melting and vacuum-casting is small
In equal to 50Pa.
5. processing method according to claim 3, which is characterized in that the temperature of vacuum melting is 1350-1410 DEG C.
6. processing method according to claim 3, which is characterized in that the temperature of vacuum-casting is 1250-1280 DEG C.
7. processing method according to claim 3, which is characterized in that the initial forging temperature of hot forging is 900-920 DEG C, finish-forging temperature
Degree is 600-650 DEG C, and the heating time of hot forging is 2.5-3h.
8. processing method according to claim 3, which is characterized in that the temperature of solid solution is 800-900 DEG C, the time of solid solution
For 1-2h.
9. processing method according to claim 3, which is characterized in that cold deformation rate is 15- during flow harden
35%.
10. processing method according to claim 3, which is characterized in that ageing treatment is under conditions of 400-500 DEG C
Manage 3-5h.
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| CN113333696A (en) * | 2021-06-01 | 2021-09-03 | 西峡龙成特种材料有限公司 | CuAlFeNi crystallizer copper plate back plate, parent metal and machining method thereof |
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| CN103146950A (en) * | 2013-01-11 | 2013-06-12 | 中南大学 | CuNiSi series elastic copper alloy and preparation method thereof |
| CN107828985A (en) * | 2017-11-30 | 2018-03-23 | 江西理工大学 | Cu Cr Zr Ni Al copper alloys, wire rod and preparation method thereof |
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| CN113333696A (en) * | 2021-06-01 | 2021-09-03 | 西峡龙成特种材料有限公司 | CuAlFeNi crystallizer copper plate back plate, parent metal and machining method thereof |
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