CN108702080A - For high-voltage electric power system switchgear and include the device of this switchgear - Google Patents
For high-voltage electric power system switchgear and include the device of this switchgear Download PDFInfo
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- CN108702080A CN108702080A CN201680081031.1A CN201680081031A CN108702080A CN 108702080 A CN108702080 A CN 108702080A CN 201680081031 A CN201680081031 A CN 201680081031A CN 108702080 A CN108702080 A CN 108702080A
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- 230000005611 electricity Effects 0.000 claims description 5
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- 102100038410 T-complex protein 1 subunit alpha Human genes 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 101000837443 Homo sapiens T-complex protein 1 subunit beta Proteins 0.000 description 6
- 102100028679 T-complex protein 1 subunit beta Human genes 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/52—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of gas-filled tubes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Power Conversion In General (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
Abstract
The present invention relates to a kind of switchgear (24) for high-voltage electric power system and the device for including this switchgear.Switchgear includes that can turn off and have the first thyristor (26) of first grid (G1) and the first and second electric current conductive terminals (CCT1, CCT2), and the second switch element (28) including that can be connected and include the electron tube with second grid (G2) and the first and second electrodes (E1, E2).Switch element (26,28) is connected in series with, wherein first electrode (E1) is connected to the second electric current conductive terminal (CCT2), wherein the first electric current conductive terminal (CCT1) and second electrode (E2) are provided and are connected to electric system, and switch element can joint operation to disconnect or be formed in the current path between second electrode (E2) and the first electric current conductive terminal (CCT1).
Description
Technical field
The present invention relates generally to high-voltage electric power systems.More particularly, the present invention relate to the switches of high-voltage electric power system
Equipment and the device for including this switchgear.
Background technology
Known switchgear is used in various high-voltage applications.As an example, switchgear may be used as mixed DC (DC)
A part for breaker or as its main circuit breaker, breaker uses mechanical switch and electric switch.Switchgear can also be by
It provides in the valve of voltage source converter (VSC).In this case, VSC can be turned at alternating current (AC) between DC
It changes, and can be provided in converter station, which is between DC high-voltage electric power systems and AC high-voltage electric power systems
Interface.VSC can also be provided as the reactive power compensation device in AC systems, such as static VAR compensator (SVC).These
Only it is the several examples for the device that can use HV switchgears.
Switchgear in above-mentioned example is required to bear high voltage.Therefore, switchgear allows for avoiding low
Failure when bearing voltage.All these systems have in common that typically now to come in fact by using thyristor
Existing switchgear, such as igbt (IGBT) or integrated grid change transistor (IGCT).In high-voltage applications,
Switch element has relatively low voltage blocking capability, usually in the range of a few kV.Therefore, for such as in network system
Very high voltage application, need being connected in series with to reach tens kV to hundreds of kV for these elements.This requirement is individually set
Standby higher reliability, but also increase complexity and the size requirement of this equipment.
It is well known that for lower voltage range, can be carried using the combination of two distinct types of switch element
For the relatively low switching capability of the higher withstanding voltage of one of equipment and second equipment.
Some of the recommendations have been proposed for providing the group of different types of thyristor in switchgear
It closes.If these different types of switch elements are connected in series with, this switchgear is commonly known as " cascode devices ".
Therefore, " cascode devices " are the mixing apparatus being connected in series with, and hereinafter will use the expression formula with this meaning.
The main reason for this method is certain favorable characteristics in conjunction with each element to obtain more preferably overall performance and trade-off relationship.
A kind of known such combination is SiC junction field effect transistors (JFET) and silicon metal oxide semiconductor field effect
Transistor (MOSFET) cascade is answered, such as to replace IGBT.This combination provides normally-off devices, because in many
It is not intended to that JFET often is connected in.In addition, the control of MOSFET gate drivings is needing to replace IGBT's with JFET cascades
It is preferred in most of applications.
Another example be with the concatenated gate turn-off thyristors of MOSFET (GTO) or integrated grid change transistor (GCT),
It is referred to as emitter turn-off thyristor (ETO).This has been demonstrated to provide controls gate driving and saturation/short circuit energy with voltage
The low conducting state thyristor structure of power.It is worth noting that, IGCT concepts also use cascode structure, wherein MOSFET with
IGCT gate series connect.But compared with ETO, MOSFET can only commutate cut-off current.
But these combine the example of two types semiconductor devices to can only achieve the withstanding voltage less than number 10kV, therefore
Be not suitable for common HV application, unless by it is several they connect again.
Many high-voltage electric power systems are used for power transmission.In such systems, it is critically important that efficiency is very high.It is transported to electricity
The electric power of force transmission system leaves electrical power transmission system as much as possible.Loss in electrical power transmission system must be very low, especially
It is to reduce the heat caused by them.
However, be connected in series with thyristor the problem of be that each such element has conduction loss.Cause
This, the conduction loss of the switchgear being made of thyristor by be thyristor conduction loss it is total
With.Therefore, the conduction loss of switchgear may have the efficiency of high-voltage electric power system and significantly affect.In addition, if by each
A equipment tandem compound, then the reliability of each equipment must be very high.They are also more complicated, for example, because each equipment is both needed to
It to be switched using grid unit.Finally, the space requirement of these systems is quite high.
It is therefore intended that obtaining a kind of switchgear, wherein the reduction of conduction loss can be obtained, have especially by using
There are high voltage carrying capacity and relatively low-loss individual equipment.
The present invention is provided to solve the problems, such as this." electron tube ", that is, vacuum tube and especially gas tube are in power half
Conductor device is used before, to provide switching function in high-voltage applications.These electron tubes be based on vacuum in or
The electron stream in plasma under person's low pressure.They have been shown to withstand up to the high pressure of 135kV.Therefore, they have
It is used as individual equipment rather than the potential quality of much equipment being connected in series with.
A large amount of in the presence of this electron tube using different physical mechanisms design to provide different functions.They can match
Standby high current and turn-on and turn-off function.Low inflation pipe has especially been researched and developed for electric power application.
Invention content
The present invention, which solves, obtains the switchgear with low conduction loss, and high to provide using only two equipment
The problem of possibility of voltage carrying capacity.
According to the first aspect of the invention, which is realized by a kind of switchgear for high-voltage electric power system, should
Switchgear includes:
First thyristor can turn off, and have first grid and the first and second electric current conduction terminals
Son, and
Second switch element can be connected, and include the electron tube with second grid and the first and second electrodes,
Wherein first switching element and second switch element is serially connected so that described the first of second switch element
Electrode is electrically connected to the second electric current conductive terminal of first switching element, wherein the first electric current conductive terminal and second electrode
Be provided for being connected to electric system, and switch element can joint operation for disconnecting or formed second electrode and
Current path between one electric current conductive terminal
According to the second aspect of the invention, the target is by including the high-tension electricity system according to the switchgear of first aspect
Device in system is realized.
Can the switch element of joint operation may need them that can sequentially operate, to obtain formation or turn-off current path
Common objective.
The present invention has many advantages.Switchgear has low conduction loss.In addition, switch element in switchgear
Negligible amounts, to reduce cost, size requires and allows high reliability.
Description of the drawings
The description present invention below with reference to the accompanying drawings, wherein
Fig. 1 schematically shows the DC electric power Transmission system for being connected to two AC systems, and wherein DC systems include two
Voltage source converter and mixing DC breakers, and one in AC systems includes reactive power compensation device,
Fig. 2 schematically shows the first modification of switchgear according to the present invention,
Fig. 3 schematically shows the second modification of switchgear according to the present invention,
Fig. 4 schematically shows the third modification of switchgear according to the present invention,
Fig. 5 schematically shows the 4th modification of switchgear according to the present invention,
Fig. 6 schematically shows the voltage source converter for the first kind for wherein using switchgear,
Fig. 7 shows the voltage source converter of the Second Type including multiple units,
Fig. 8 is shown in which the unit by switchgear realization unit switch, and
Fig. 9 schematically shows mixing DC breakers comprising the main open circuit realized using at least one switchgear
Device.
Specific implementation mode
This hereinafter detailed description of preferred embodiments of the present invention will be given.
Fig. 1 shows direct current (DC) the power transmission system of the simplification including the first converter station 10 and the second converter station 12
System.Two converter stations 10 and 12 include using both mechanical switch and electric switch by 18 interconnection of DC links, DC links 18
Mixing HVDC breakers 22.First converter station 10 includes being connected to exchange (AC) power transmission system via the first transformer T1
First current transformer 14 of system, and the second converter station 12 includes being connected to the 2nd AC power transmissions system via the second transformer T2
Second current transformer 16 of system.It is not illustrated in detail any AC electrical power transmission systems.However, in the first AC electrical power transmission systems
Reactive power compensation device 20 is provided, which can be so-called static VAR compensator (SVC).DC
System and AC systems be all the example of high-voltage electric power system, and in this case and high voltage power transmission system show
Example.
Both current transformer 14 and current transformer 16 can be voltage source converters (VSC), and can be two level unsteady flows
Device, or include the Multilevel Inverters of multiple units, that is, it is used to form the voltage source of multiple units of multiple voltage levels
Current transformer.Conversion in this example carries out also between DC and three-phase AC.Therefore, two current transformers all have there are three bridge arm,
One bridge arm of each phase.In example given later, a bridge arm only will be shown and described.It is well known, however, that all
Bridge arm realization all having the same.It should also be appreciated that there are other kinds of voltage source converter, such as neutral point clamper three
Level current transformer and various n level current transformers.
Current transformer 14 and current transformer 16, reactive power compensation device 20 and mixing DC breakers 22 are all to use switchgear
High-voltage electric power system in device example.Show it should be appreciated that these are only the several of the configuration in high-voltage electric power system
Example, can be used for example the electrical power transmission system of switchgear.
As previously mentioned, by being connected in series with a large amount of thyristor, i.e., the traditional approach for providing switchgear is
It is realized by using semiconductor devices (such as igbt (IGBT) or integrated grid change transistor (IGCT))
Switch element.
It is also as before, the conduction loss of the switchgear of gained can be increased using some concatenated such elements,
This has negative effect to the efficiency for using the high-voltage electric power system of the switchgear in many cases.
It is also possible to increase the cost and size of possibility and switchgear that switchgear breaks down.
Solves the above problem by the switchgear for introducing new.
The new switching equipment is " cascade device " comprising two different switch elements are connected in series with, and one
A thyristor and a switch element (gas tube such as with very high voltage blocking capability based on electron tube
Or vacuum tube).
Fig. 2 shows the first modifications of new switchgear 24.Switchgear 24 includes the first thyristor 26,
First thyristor 26 can at least be turned off and may can also be connected, and have first grid G1, Yi Ji
One electric current conductive terminal CCT1 and the second electric current conductive terminal CCT2.
Switchgear 24 further includes second switch element 28, and second switch element 28 can at least be connected and possibility can also
Enough shutdowns, and include the electron tube with second grid G2 and first electrode E1 and second electrode E2, wherein grid G 2 can
With the electric current being configured between coordination electrode E1 and E2, it is advantageously that unidirectional current.First electrode E1 is cathode, and the second electricity
Pole E2 is anode.
As in fig. 2 it can be seen that first switching element 26 and second switch element 28 are serially connected so that second
The first electrode E1 of switch element 28 is electrically connected to the second electric current conductive terminal CCT2 of first switching element 26.Here, second
Electrode E2 and the first electric current conductive terminal CCT1 is the connection terminal of switchgear 24, it means that provides them for connection
To the other parts of high-voltage electric power system.If switchgear 24 is device (such as current transformer 14, SVC20 or DC breakers 22)
A part, then terminal CCT1 and E2 may be coupled to the other parts of current transformer 14, SVC20 or DC breakers 22.
Second switch element 28 can be gas tube.Alternatively, it can also be vacuum tube.First switching element 26 can
To be the switch element based on thyristor, such as integrated grid change transistor (GTO, IGCT).Alternatively, it can also be
Transistor, such as igbt (IGBT) or junction field effect transistor JFET.In the case of IGCT, the first electricity
It can be cathode to flow conductive terminal CCT1, and the second electric current conductive terminal CCT2 can be anode.In the case of igbts, first
Electric current conductive terminal CCT1 can be emitter, and the second current conductor terminal CCT2 can be collector.
Switchgear 24 can be the gas vacuum tube elements of the very high pressure as second switch element or hard vacuum tube
Element is connected with the semiconductor element of the relatively low voltage as first switching element.As second switch element, based on not
With design, there are many selections, hard vacuum tube (as triode, tetrode etc.), gas tube (such as Thyratrons,
Crossed-field discharge switch), or such as Crossatron and coreless armature element (such as Hollowtron or pseudo- sparks
Switch) particular element, name just a few.These elements have the function of extensive voltage and current rated value and different.So
And the main distinction of they and power semiconductor is their the very high voltage carrying capacity for single device
(can be between 10kV-135kV), so that their systems suitable for the very high pressure of such as HVDC.With for realizing
The equivalent force device configuration being connected in series with of identical rated voltage is compared, for this high-pressure installation, in these elements
Some also have have a great attraction loss performance.According to component type, they additionally provide and function are only connected, such as
Thyratron, or provide turn-on and turn-off function, such as Crossatron and Hollowtron.
May only have second switch element that can be connected.On the other hand, first switching element at least needs to turn off control.This
It is meant that if there is second switch element the grid that can be connected, first switching element 26 may not have conducting
Ability, and it is only off the switch element of type, such as JFET.
In addition, first switching element 26 has first voltage ability to bear, and second switch element 28 has second voltage
Ability to bear, and the voltage carrying capacity of second switch element 28 can be significantly higher than the voltage of first switching element 26 and hold
By ability.For example, it can be ten times of the voltage carrying capacity of first switching element.Alternatively, it can be at least 20 times high
Or it is at least 25 times high.
This combination can for example bear the IGCT of 4500V to be connected in series to and can withstand up to 135kV's
Crossatron or Thyratron.As can be seen that this will cause second voltage bear to bear than first voltage it is 80/3 times high.
In fig. 2 it can also be seen that second electrode E2 has potential more higher than the first electric current conductive terminal CCT1, this is logical
It crosses the second electrode with positive potential (+) and the first electric current conductive terminal with negative potential (-) is shown.This means that technology is electric
Stream or conventional current are from second electrode E2 to the first electric current conductive terminal CCT1.Electron stream will in the opposite direction.
In addition, switch element can joint operation in the interruption of second electrode E2 and the first electric current conductive terminal CCT1
Open or formed current path.In the illustrated example shown in fig. 2, it is employed as the Gate control unit 30 of a part for switchgear 24
To obtain the joint operation.Therefore, joint operation is cooperating.Joint operation can also be that sequence operates.However, should recognize
Know, this joint operation is not necessarily obtained by this Gate control unit 30, but it includes switchgear 24 that can be used as
The part of control of device provide.For example, if one as VSC (such as the first current transformer 14) of switchgear 24
Point provide, then grid control function can be provided as the switchgear of VSC integrally control a part (for example, with
In the part for forming AC waveforms).
Gate control unit 30 is provided for being formed or being disconnected in second electrode E2 and the first electric current conductive terminal
Current conduction path between CCT1.
Gate control unit 30 may be configured to form current path by using grid control sequence, the grid control
Sequence processed includes:Grid control signal is applied to first grid G1 first switching element 26 is connected, then by grid first
Pole control signal is applied to second grid so that second switch element 28 is connected.Therefore, second grid G2 can be in first switch
Grid control signal is received after the conducting of element 26.Sequence may be reversed.
Therefore, thyristor 26 and grid tube elements 28 can be initially connected with given sequence, this is not to close
Key, if power semiconductor 26 first turns on, and the still blocking voltage of pipe 28.Therefore, electron tube is made to be connected
It is crucial, and the conducting of semiconductor devices can be optional.
One limitation of most of sorts of electronic pipes as second switch element is that they are typically only capable to shutdown appropriateness
(moderate) electric current, because they depend on low plasma density in this process.In contrast, semiconductor element can be with
By quite high switch off current.
In order to solve this problem, Gate control unit 30 can be first by grid control signal at turn-off current path
First grid G1 is applied to turn off first switching element 26, to by the electric current in current path from the first conventional current level
It is reduced to the second lower cut-off current level, to make second switch element 28 be turned off under this second current level with disconnected
Open current path.
Depending on the type of second switch element 28, Gate control unit 30 can also apply grid control to second grid G2
Signal processed disconnects second switch element 28 when being in the second current level with the electric current in current path, described in disconnection
Current path.
In the example of the IGCT and Crossatron or Thyratron that are given above, during shutdown, IGCT is closed first
It is disconnected, electric current is reduced to extremely low level before shutdown gas tube 28 (in the case of Crossatron).If the
Two switch elements 28 are Thyratron, then may not be needed grid control signal, because Thyratron can be due to low current
It flows and voluntarily turns off.
As can be seen that the use of first switching element 26 also allows to provide turn-off capacity for second switch element 28, second
Switch element 28 is generally not provided its turn-off capacity, or alternatively, consumingly enhances their passes to higher nominal current
Cutting capacity.In addition, first switching element 26 improves the reliability of combination unit.
With the 10V of electron tube up to the common forward voltage (depending strongly on selected tube design) of 1kV
It compares, the additional voltage drop by semiconductor is a small factor always.
In principle, the configuration of two switch elements in cascade device can be arbitrary.It therefore can as replacement
Can, the first electrode E1 of second switch element 28 is connected to negative potential (-), and second electrode E2 is electrically connected to first switch member
The second electric current conductive terminal CCT2 of first electric current conductive terminal CCT1 of part 26, first switching element 26 are connected to positive potential
(+).Show the realization but not control unit the present invention the second modification schematically show in figure 3.As a result, there will be
Electric current from the second electric current conductive terminal CCT2 to first electrode E1.It may, however, be preferred that electron tube is made to be first in skill
Art direction of current flow followed by semiconductor devices, just as shown in FIG. 2.Therefore, switchgear 24 can be designed to use
In being connected to high-voltage electric power system so that the direction of current conduction by it is from second electrode E2 to the first electric current conductive terminal
CCT1.This is because the asymmetrical design of electron tube, wherein conducting (and shutdown) is due to the voltage relative to cathode.In general,
Electron tube has high withstanding voltage between grid and anode, and needs low-voltage between the gate electrode and the cathode electrode, is used for them
Control.In this configuration, it needs to control both grid G1 and grid G 2 relative to the "-" voltage in Fig. 2.With exchange
Two devices are compared, and G2 will be controlled relative to "-" voltage, but G1 is controlled relative to intermediate voltage level.During opening state,
Voltage between G1 and G2 by be high voltage magnitude.
In addition, some inflation tube elements usually require largely to commutate the current to grid by using additional power supply.
In being configured shown in fig. 2, semiconductor element is allowed to limit the current of commutation, because it is a part for current path.
In exchanging the alternative configuration of position of semiconductor devices and gas tube, situation is really not so, and it reduce the serviceabilities of design.
As described above, switchgear 24 can use in various devices (such as in VSC).In this device, lead to
It is often used inverse parallel current regulator elements, such as diode.Therefore, switchgear 24 may include anti-paralleled diode.Wherein
One example is shown in FIG. 4, and Fig. 4 shows first switching element 26 and second switch element 28 in Fig. 2.However,
In addition, here there is also anti-paralleled diode D, cathode is connected to second electrode E2, and its anode is connected to the first electric current
Conductive terminal CCT1.It please remember, in this case, diode can be based on semiconductor or electron tube principle.In this variant,
Gate control unit is omitted.However, may also include a Gate control unit here.
Another example of the switchgear including inverse parallel unidirectional current transport element is shown in FIG. 5.Fig. 5 is also shown
First switching element 26 in Fig. 2 and second switch element 28.However, in addition, it includes anti-to exist in means 24 here
Parallel connection sealing electron tube 31 unidirectional current transport element, inverse parallel sealing electron tube 31 include third grid G 3 and
Third electrode E3 and the 4th electrode E4, wherein grid G 3 are configured to the electric current between coordination electrode E3 and E4, i.e. unidirectional current.
Third electrode E3 can be anode, and the 4th electrode E4 can be cathode.Third electrode E3 is connected to the first electric current conductive terminal
CCT1, and the 4th electrode E4 is connected to second electrode E2.In addition, Gate control unit can certainly be added here, therefore grid
Pole control unit can also control third grid G 3 and for example be connected always.
As described above, switchgear 24 can be used in a plurality of types of devices.Fig. 6 shows the bridge of the first current transformer
Arm, the first current transformer is realized as tool, and there are two the two level current transformer 14A of current transformer valve CV1 and CV2, wherein the first current transformer
Valve CV1 is connected to the negative D/C voltage-V of the first transformer T1 and DC link 18DCBetween, and the second current transformer valve CV2 is connected to
Positive D/C voltage+the V of first transformer T1 and DC link 18DCBetween.There are one DC link capacitors C across two valves CV1 and CV2
Connection.In the apparatus, each valve can be realized for example, by switchgear shown in figure 2 and figure 3.Provided that the
Two valve CV2, then second electrode will be connected to positive D/C voltage+VDC, and the first electric current conductive terminal will be connected to the first transformer T1.
If the switchgear of Fig. 2 or Fig. 3 will be used, it is unidirectionally electric the inverse parallel as shown in figures 4 and 5 may must to be added
Spread guiding element.Alternatively, the switchgear of Fig. 4 and Fig. 5 can directly be used.
Another example for the device that can use switchgear 24 is shown in FIG. 7.In this case, the first current transformer
It is the modular multi-level converter 14B using half-bridge cells, wherein Fig. 7 shows the first bridge arm comprising respectively via right
The bridge arm reactor LA that answers and bridge arm reactor LB engagements (join) to bridge arm midpoint upper bridge arm and lower bridge arm, in bridge arm
Point is joined to the first transformer (not shown).As shown in FIG. 7, each bridge arm is made of multiple units 32, each unit 32
It is implemented as being connected in series with for two switches in parallel with cell capaciator.In the figure 7 it also shows that this switch is generally implemented
For the IGBT with anti-paralleled diode.
As shown in FIG. 8, unit 32'Each of switch can be replaced by switchgear 24, such as Fig. 4 or Fig. 5 is opened
Close equipment.Two switchgears 24 being connected in series with as a result, and cell capaciator CUnitIt is connected in parallel.In this case, it above opens
Cell capaciator C will be connected to by closing the second electrode of equipmentUnitUpper end, and the first electric current conductive terminal will be connected to lower switch
Equipment, and it is more specifically connected to the second electrode of lower switch equipment, the second electric current conductive terminal will be connected to cell capacitance
Device CUnitLower end.
If the switchgear of Fig. 2 or Fig. 3 is used instead, corresponding unidirectional current transport element certainly must with such as
Each switchgear 24 shown in figures 4 and 5 is connected in parallel.
SVC can also be implemented as VSC, such as by modular more level VSC, wherein three bridge arms are with triangle
(delta) configuration connection.In this case, each bridge arm can be realized by one or more switchgears.
Finally, mixing HVDC breakers 22 are shown in FIG. 9.It includes main circuit breaker 35 and a load-commutated switch
38, main circuit breaker 35 and for example pass through a mechanical switch realize 36 company of series connection of ultrahigh speed decoupler (disconnector)
It connects.Here there is also first surge arrester (arrestor) SA1 in parallel with main circuit breaker 35 and with load-commutated switch
38 second surge arrester SA2 in parallel.
In this case, main circuit breaker 35 can be realized by one or more concatenated switchgears.It is load-commutated
Switch can also use switchgear.
There is the case where AC circuit-breakers usually realized by the thyristor being connected in series in AC systems
Under, then this thyristor can also be replaced by switch element.
Therefore a kind of new switchgear is had been illustrated with, many different devices that can be used in high-voltage electric power system
In, such as high voltage power transmission system.New switching device has many advantages, including low conduction loss, can be by limited
The element of quantity is realized and has high reliability.
Gate control unit can realize in the form of discrete component, the combination of such as logic circuit.It can also use all
Such as field programmable gate array (FPGA) or the programmable circuit of application-specific integrated circuit (ASIC).Another alternative solution is with companion
With the form of the processor of program storage, which includes that required control function is executed when running on a processor
Computer program code.
From the discussion of front, it is apparent that the present invention can be varied in many ways.It will therefore be appreciated that this hair
It is bright to be limited only by the appended claims.
Claims (20)
1. a kind of switchgear (24) for high-voltage electric power system, the switchgear include:
First thyristor (26) can turn off and have first grid (G1) and the first electric current conductive terminal
(CCT1) and the second electric current conductive terminal (CCT2), and
Second switch element (28) can be connected and include with second grid (G2) and first electrode (E1) and second
The electron tube of electrode (E2),
The wherein described first switching element (26) and the second switch element (28) are serially connected so that described second opens
The first electrode (E1) for closing element (28) is electrically connected to the second electric current conduction terminals of the first switching element (26)
Sub (CCT2), wherein described in the first electric current conductive terminal (CCT1) and the second electrode (E2) be provided for connection to
Electric system, and the switch element can joint operation for disconnecting or formed the second electrode (E2) and described
Current path between one electric current conductive terminal (CCT1).
2. switchgear (24) according to claim 1, wherein the first switching element (26) is held with first voltage
By ability, the second switch element (28) has second voltage ability to bear, and the electricity of the second switch element (28)
Pressure ability to bear is at least ten times of height of voltage carrying capacity of the first switching element (26).
3. switchgear (24) according to claim 1 or 2, the switchgear are designed to be connected to the height
Piezoelectricity Force system so that the direction of current conduction by the equipment is passed from the second electrode (E2) to first electric current
Lead terminal (CCT1).
4. switchgear (24) according to any one of the preceding claims, wherein the first grid (G1) can operate
To receive grid control signal for turning off the first switching element (26), for by the electric current in the current path
It is reduced to the second current level of lower shutdown from the first conventional current level, to allow the second switch element (28)
It is turned off under second current level, to disconnect the current path.
5. switchgear (24) according to claim 4, wherein when the electric current in the current path is in described second
When current level, the second switch element (28) can operate to be closed by the second grid (G2) that can be turned off
It is disconnected, and the second grid (G2) can be operated to receive the grid control letter for turning off the second switch element (28)
Number, to disconnect the current path.
6. switchgear (24) according to any one of the preceding claims, wherein the first switching element can operate
To be connected by the first grid (G1) that can be connected.
7. switchgear (24) according to claim 6 is used for wherein the first grid (G1) can be operated with receiving
The grid control signal that the first switching element (26) is connected, and the second grid (G2) can be operated with described
The grid control signal for the second switch element (28) to be connected is received after first switching element (26) conducting.
8. the switchgear (24) according to any one of claim 4-7 further includes Gate control unit (30), for
At least one grid control signal is applied to the first grid (G1).
9. switchgear (24) according to any one of the preceding claims, further include with described two switch elements (26,
28) the unidirectional transport element being connected in parallel.
10. switchgear (24) according to claim 9, wherein the unidirectional transport element is diode (D).
11. switchgear (24) according to claim 9, wherein the unidirectional transport element (31) includes having third grid
The electron tube of pole (G3) and third electrode (E3) and the 4th electrode (E4), wherein the third grid (G3)) it is configured to control
Make the electric current between the third electrode (E3) and the 4th electrode (E4).
12. switchgear (24) according to any one of the preceding claims, wherein the second switch element (28)
The electron tube is gas tube.
13. the switchgear (24) according to any one of claim 1-11, wherein the second switch element (28)
The electron tube is vacuum tube.
14. switchgear (24) according to any one of the preceding claims, wherein the first switching element (26) is
Switch element based on thyristor, such as integrated grid change transistor.
15. the switchgear (24) according to any one of claim 1-13, wherein the first switching element (26) is
Transistor, such as igbt or junction field effect transistor.
16. device (the 14A in a kind of high-voltage electric power system;14B;20;22), including according to any one of preceding claims institute
The switchgear (24) stated.
17. device according to claim 16, wherein described device are mixing DC breakers (22).
18. device according to claim 17, wherein the switchgear (24) is included in the mixing DC breakers
(22) in main circuit breaker (35).
19. device according to claim 16, wherein described device are voltage source converter (14A), and the switch
Equipment is the valve (CV1) in the voltage source converter (14A).
20. device according to claim 16, wherein described device are modular multi-level converter (14B), and institute
It is the unit (32&apos in the modular multi-level converter (14B) to state switchgear (24);) switch.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/052595 WO2017137057A1 (en) | 2016-02-08 | 2016-02-08 | Switching device for a high voltage power system and an arrangement comprising such a switching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108702080A true CN108702080A (en) | 2018-10-23 |
| CN108702080B CN108702080B (en) | 2021-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680081031.1A Active CN108702080B (en) | 2016-02-08 | 2016-02-08 | Switching device for a high voltage power system and arrangement comprising such a switching device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108702080B (en) |
| WO (1) | WO2017137057A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019149385A1 (en) * | 2018-01-30 | 2019-08-08 | Abb Schweiz Ag | Surge arrestor dimensioning in a dc power transmission system |
| US11251598B2 (en) | 2020-01-10 | 2022-02-15 | General Electric Technology Gmbh | Gas discharge tube DC circuit breaker |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107292A (en) * | 1990-04-13 | 1992-04-21 | West Electric Co., Ltd. | Electronic flash unit |
| JPH08308094A (en) * | 1995-04-27 | 1996-11-22 | Sony Tektronix Corp | Circuit breaker apparatus |
| CN101632214A (en) * | 2007-02-06 | 2010-01-20 | 株式会社东芝 | Semiconductor switch and power converter to which the semiconductor switch is applied |
| US20120025797A1 (en) * | 2010-07-30 | 2012-02-02 | Fujitsu Semiconductor Limited | Control circuit for power supply |
| US20120218800A1 (en) * | 2009-12-24 | 2012-08-30 | Mitsubishi Electric Corporation | Power converter device and driving method thereof |
| CN103210587A (en) * | 2010-06-30 | 2013-07-17 | E2V技术（英国）有限公司 | Switching arrangement |
| US20140254228A1 (en) * | 2013-03-08 | 2014-09-11 | Delta Electronics, Inc | Three-level converter |
| CN104283448A (en) * | 2013-07-01 | 2015-01-14 | 株式会社日立制作所 | Power conversion device |
| CN104467456A (en) * | 2013-09-17 | 2015-03-25 | 株式会社安川电机 | Power conversion apparatus |
| US20150194889A1 (en) * | 2014-01-09 | 2015-07-09 | Dialog Semiconductor Gmbh | High Voltage DC/DC Converter with Master/Slave Output Stage |
| WO2016014901A1 (en) * | 2014-07-24 | 2016-01-28 | Eaton Corporation | Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101225322B1 (en) * | 2008-03-20 | 2013-01-23 | 에이비비 리써치 리미티드 | A voltage source converter |
| WO2014111164A1 (en) * | 2013-01-21 | 2014-07-24 | Abb Technology Ltd | A multilevel converter with hybrid full-bridge cells |
-
2016
- 2016-02-08 WO PCT/EP2016/052595 patent/WO2017137057A1/en active Application Filing
- 2016-02-08 CN CN201680081031.1A patent/CN108702080B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107292A (en) * | 1990-04-13 | 1992-04-21 | West Electric Co., Ltd. | Electronic flash unit |
| JPH08308094A (en) * | 1995-04-27 | 1996-11-22 | Sony Tektronix Corp | Circuit breaker apparatus |
| CN101632214A (en) * | 2007-02-06 | 2010-01-20 | 株式会社东芝 | Semiconductor switch and power converter to which the semiconductor switch is applied |
| US20120218800A1 (en) * | 2009-12-24 | 2012-08-30 | Mitsubishi Electric Corporation | Power converter device and driving method thereof |
| CN103210587A (en) * | 2010-06-30 | 2013-07-17 | E2V技术（英国）有限公司 | Switching arrangement |
| US20120025797A1 (en) * | 2010-07-30 | 2012-02-02 | Fujitsu Semiconductor Limited | Control circuit for power supply |
| US20140254228A1 (en) * | 2013-03-08 | 2014-09-11 | Delta Electronics, Inc | Three-level converter |
| CN104283448A (en) * | 2013-07-01 | 2015-01-14 | 株式会社日立制作所 | Power conversion device |
| CN104467456A (en) * | 2013-09-17 | 2015-03-25 | 株式会社安川电机 | Power conversion apparatus |
| US20150194889A1 (en) * | 2014-01-09 | 2015-07-09 | Dialog Semiconductor Gmbh | High Voltage DC/DC Converter with Master/Slave Output Stage |
| WO2016014901A1 (en) * | 2014-07-24 | 2016-01-28 | Eaton Corporation | Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108702080B (en) | 2021-01-12 |
| WO2017137057A1 (en) | 2017-08-17 |
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