CN108695814A - Protection circuit for power ground - Google Patents

Protection circuit for power ground Download PDF

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Publication number
CN108695814A
CN108695814A CN201810761225.7A CN201810761225A CN108695814A CN 108695814 A CN108695814 A CN 108695814A CN 201810761225 A CN201810761225 A CN 201810761225A CN 108695814 A CN108695814 A CN 108695814A
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CN
China
Prior art keywords
intelligence
mosfet modules
mosfet
modules
protection circuit
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Granted
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CN201810761225.7A
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Chinese (zh)
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CN108695814B (en
Inventor
许海丽
曾国建
颛孙明明
余铿
程晓伟
杨彦辉
吉祥
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Anhui Rntec Technology Co Ltd
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Anhui Rntec Technology Co Ltd
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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60LPROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
    • B60L3/00Electric devices on electrically-propelled vehicles for safety purposes; Monitoring operating variables, e.g. speed, deceleration or energy consumption
    • B60L3/04Cutting off the power supply under fault conditions

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Power Engineering (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The present invention provides a kind of protection circuit for power ground, belongs to power circuit design field.The protection circuit includes:Intelligent MOSFET modules, the first end of the intelligence MOSFET modules is connect with the output end of the power ground, the second end of the intelligence MOSFET modules is grounded, the third end of the intelligence MOSFET modules is used for output status signal for receiving control signal, the 4th end of the intelligence MOSFET modules;Controller module, the first end of the control module are connect with the third end of the intelligence MOSFET modules, and the second end of the controller module is connect with the 4th end of the intelligence MOSFET modules.The protection circuit can break down to avoid the output end of power ground.

Description

Protection circuit for power ground
Technical field
The present invention relates to power circuit designing techniques, more particularly to a kind of protection circuit for power ground.
Background technology
In electric automobile whole system, the control unit for having numerous needs independently-powered, such as sensor, relay.It is existing Capable power supply mode mainly has control module such as BMS in accumulator direct-furnish, system (Battery Management System, electricity Pond manage system) etc. directly out-put supply power two ways.In latter power supply mode, for simple and convenient circuit and cost is reduced, Out-put supply is directly generally provided by module board interior power, circuit has no corresponding error protection measure under this power supply mode, When the failures such as short circuit, overvoltage, excess temperature occur for power ground, easily module and circuit system is caused to break down, influence the peace of vehicle Row for the national games.
Invention content
The object of the present invention is to provide a kind of protection circuits for power ground, which can be to avoid power ground Output end breaks down.
To achieve the goals above, the present invention provides a kind of protection circuit for power ground, and the protection circuit can be with Including:
Intelligent MOSFET (metal-oxide-semiconductor, metal oxide semiconductor field effect tube) module, the of the intelligence MOSFET modules One end is connect with the output end of the power ground, the second end ground connection of the intelligence MOSFET modules, the intelligence MOSFET moulds The third end of block is used for output status signal for receiving control signal, the 4th end of the intelligence MOSFET modules;
Controller module, the first end of the controller module are connect with the third end of the intelligence MOSFET modules, institute The second end for stating controller module is connect with the 4th end of the intelligence MOSFET modules;
The intelligence MOSFET modules are used to detect that the level signal of the ground terminal output is low level situation Under, high level is exported by the 4th end of the intelligence MOSFET modules, the controller module is passing through the controller mould In the case that the second end of block receives the high level, high level is exported by the first end of the controller module, it is described The intelligence is connected in the case where the third termination by the intelligence MOSFET modules receives high level in intelligent MOSFET modules Connection between the first end and the second end of the intelligence MOSFET modules of energy MOSFET modules is so that the output terminates Ground;
The intelligence MOSFET modules are additionally operable to detecting that the level signal of the ground terminal output is the feelings of high level Under condition, low level is exported by the 4th end of the intelligence MOSFET modules, the controller module is passing through the controller The second end of module receive it is described it is low level in the case of, low level, institute are exported by the first end of the controller module State intelligent MOSFET modules in the case that received by the thirds of intelligence MOSFET modules termination it is low level, described in disconnection Connection between the first end of MOSFET modules and the second end of the intelligence MOSFET modules is so that the output end is hanging.
Optionally, is serially connected between the first end of the controller module and the third end of the intelligence MOSFET modules One resistance.
Optionally, is serially connected between the second end of the controller module and the 4th end of the intelligence MOSFET modules Two resistance, the node between the second resistance and the 4th end of the intelligence MOSFET modules pass through the external high electricity of 3rd resistor Ordinary mail number.
Optionally, the intelligence MOSFET modules include:
Controllable switch, one end of the controllable switch are connect with the output end, the second end ground connection of the controllable switch;
Gate drivers, the first end of the gate drivers are connect with the output end, and the of the gate drivers Two ends are connect with the control terminal of the controllable switch, the second ends of the gate drivers also by the 4th resistance with it is described controllable The other end of switch connects, the third end ground connection of the gate drivers, the 4th end and the intelligence of the gate drivers The third end of MOSFET modules connects, and the 5th end of the gate drivers and the 4th end of the intelligence MOSFET modules connect It connects.
Optionally, the 5th electricity is serially connected between the second end of the gate drivers and the control terminal of the controllable switch Resistance.
Optionally, the node between the first end of the gate drivers and one end of the controllable switch passed through for the first wink Node connection between state diode and the 5th resistance and the control terminal of the controllable switch.
Optionally, the node between the 5th resistance and the control terminal of the controllable switch passes through the second transient diode Ground connection.
Optionally, the controllable switch includes field-effect tube.
Optionally, the first end of the intelligence MOSFET modules is grounded by filter capacitor.
Through the above technical solutions, the level for passing through acquisition power ground provided by the present invention for the protection circuit of power ground Signal determines whether the power ground breaks down, and in the case where determining that the power ground breaks down, deenergization with Connection between ground terminal further ensures that the operation peace of electric vehicle to avoid the occurrence of the problem of power supply ground short circuit, overvoltage Entirely.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, an and part for constitution instruction, with following tool Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of the protection circuit for power ground according to embodiment of the present invention;
Fig. 2 is the structural schematic diagram of the protection circuit for power ground according to embodiment of the present invention.
Reference sign
01, intelligence MOSFET modules 02, controller module
R1, first resistor R2, second resistance
R3,3rd resistor R4, the 4th resistance
R5, the 5th resistance D1, the first transient diode
D2, the second transient diode Q1, controllable switch
C1, filter capacitor GD, gate drivers
Specific implementation mode
The specific implementation mode of the present invention is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched The specific implementation mode stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
It is the structural representation of the protection circuit for power ground according to embodiment of the present invention as shown in Figure 1 Figure.In Fig. 1, which may include:Intelligent MOSFET modules 01 and controller module 02.
The first end of intelligent MOSFET modules 01 can be connect with the output end of power ground, and the of intelligent MOSFET modules 01 Two ends are grounded, and the third end of intelligent MOSFET modules 01 is used for receiving control signal, the 4th end of intelligent MOSFET modules 01 In output status signal.
The first end of controller module 02 is connect with the third end of intelligence MOSFET modules 01, and the second of controller module 02 End is connect with the 4th end of intelligence MOSFET modules 01.
In the case where the power ground works normally, intelligent MOSFET modules 01 detect the ground terminal output of power ground Level signal is low level.So, intelligent MOSFET modules 01 export high level by the 4th end, and controller module 02 is passing through In the case that the second end of controller module 02 receives high level, determine that the output termination electricity of the power ground is normal, then logical Cross the first end output high level of controller module 02.Intelligent MOSFET modules 01 are in the third by intelligent MOSFET modules 01 In the case that termination receives high level, the second end of the first end and intelligence MOSFET modules 01 of conducting intelligence MOSFET modules 01 Between connection so that output end be grounded.
In the case of the power ground non-normal working, intelligent MOSFET modules 01 detect the ground terminal output of power ground Level signal be high level (power ground may by misconnection to All other routes, and the output of the All other routes be high level). So, intelligence MOSFET modules 01 can export low level by its 4th end.Controller module 02 is passing through controller mould The second end of block 02 receive it is low level in the case of, determine the power ground output end break down.So pass through controller The first end of module 02 exports low level.Intelligent MOSFET modules 01 are received in the third termination by intelligent MOSFET modules 01 In the case of low level, disconnect MOSFET modules first end and the second end of intelligence MOSFET modules 01 between connection so that It is hanging to obtain output end, to avoid the problem that short circuit grounding occurs in the output end of the power ground.
In an embodiment of the invention, as shown in Fig. 2, the first end of controller module 02 and intelligence MOSFET moulds It can be serially connected with first resistor R1 between the third end of block 01.First resistor R1 can be for restriction controller module 02 Size of current between first end and the third end of intelligence MOSFET modules 01 avoids being damaged by high current both to protect.
In an embodiment of the invention, the second end of controller module 02 and the 4th of intelligence MOSFET modules 01 Second resistance R2 can be serially connected between end.Node between second resistance R2 and the 4th end of intelligence MOSFET modules 01 can To pass through the external high level signals of 3rd resistor R3.As can be known from Fig. 2, it is exported at the 4th end of intelligence MOSFET modules 01 high In the case of level, since 3rd resistor R3 acts on the pull-up of voltage, the second end of controller module 02 receives high level (node voltage between second resistance R2 and 3rd resistor R3) confirms that the output end of the power ground does not break down.In the intelligence Can MOSFET modules 01 the output of the 4th end it is low level in the case of, the node between second resistance R2 and 3rd resistor R3 at this time Voltage is low level, then the second end of controller module 02 receives low level, and then confirms that the output of the power ground is brought out Existing failure.
In an embodiment of the invention, intelligent MOSFET modules 01 may include:Controllable switch Q1 and grid drive Dynamic device GD.
One end of controllable switch Q1 can be connect with the output end of power ground, the second end ground connection of controllable switch Q1.
The first end of gate drivers GD can be connect with the output end of power ground, the second end of gate drivers GD with can The control terminal connection of switch Q1 is controlled, the second end of gate drivers GD also passes through the other end of the 4th resistance R4 and controllable switch Q1 Connection, the third end ground connection of gate drivers GD, the third end at the 4th end and intelligence MOSFET modules 01 of gate drivers GD Connection, the 5th end of gate drivers GD is connect with the 4th end of intelligence MOSFET modules 01.
In an embodiment of the invention, between the second end of gate drivers GD and the control terminal of controllable switch Q1 The 5th resistance R5 can be serially connected with.5th resistance R5 can be used for limiting the second end and controllable switch of gate drivers GD Size of current between the control terminal of Q1 avoids high current from damaging controllable switch Q1.
In an embodiment of the invention, between the first end of gate drivers GD and one end of controllable switch Q1 Node is connected by the node between the first transient diode D1 and the 5th resistance R5 and the control terminal of controllable switch Q1.This first Transient diode D1 can be used for limiting the voltage swing between one end and the control terminal of controllable switch Q1 of controllable switch Q1, keep away Exempt from big voltage to damage controllable switch Q1.
In an embodiment of the invention, the node between the 5th resistance R5 and the control terminal of controllable switch Q1 passes through Second transient diode D2 ground connection.Second transient diode D2 can be used for limiting the control terminal of controllable switch Q1 and controllably open The voltage swing between the other end of Q1 is closed, big voltage is avoided to damage controllable switch Q1.
In an embodiment of the invention, controllable switch Q1 can include but is not limited to those skilled in the art institute Triode, field-effect tube, insulated gate bipolar transistor, relay for knowing etc..
In an embodiment of the invention, the first end of intelligent MOSFET modules 01 can be connect by filter capacitor C1 Ground.Filter capacitor C1 can be for filtering out, avoiding by the AC signal in the level signal of the output end output of power ground AC signal damages controllable switch Q1.
In an embodiment of the invention, which can include but is not limited to general processor, special It is processor, conventional processors, digital signal processor (DSP), multi-microprocessor, one or more associated with DSP core It is a microprocessor, controller, microcontroller, application-specific integrated circuit (ASIC), field programmable gate array (FPGA) circuit, any Other types of integrated circuit (IC), state machine etc..
Through the above technical solutions, the protection circuit provided by the present invention for power ground has the following technical effects:
1, it determines whether the power ground breaks down by acquiring the level signal of power ground, and is determining the power ground In the case of breaking down, connection of the deenergization ground between ground terminal, to avoid the occurrence of power supply ground short circuit, overvoltage is asked Topic, further ensures that the operational safety of electric vehicle;
2, the circuit devcie that the protection circuit uses includes controller and intelligence MOSFET, and application mode is relatively easy, Design cost is low;
3, due to the sensitivity of intelligent MOSFET and controller itself so that the protection circuit is brought out in the output of power ground Output can be cut off rapidly in the Millisecond time of existing failure, so that it is guaranteed that the safety of the output end of power ground.
Above in association with attached drawing be described in detail the present invention optional embodiment, still, the present invention is not limited to it is above-mentioned can The detail in embodiment is selected, within the scope of the technical concept of the present invention, technical scheme of the present invention can be carried out more Kind simple variant, these simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, embodiment of the present invention Various combinations of possible ways are no longer separately illustrated.
It will be appreciated by those skilled in the art that realizing that all or part of step in the above embodiment is can to pass through journey Sequence is completed to instruct relevant hardware, which is stored in a storage medium, including some instructions are used so that one (can be microcontroller, chip etc.) or processor (processor) execute the whole of each embodiment the method for the application Or part steps.And storage medium above-mentioned includes:USB flash disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disc or CD etc. are various can store journey The medium of sequence code.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally The thought of invention embodiment equally should be considered as embodiment of the present invention disclosure of that.

Claims (9)

1. a kind of protection circuit for power ground, which is characterized in that the protection circuit includes:
The first end of intelligent MOSFET modules, the intelligence MOSFET modules is connect with the output end of the power ground, the intelligence The second end ground connection of energy MOSFET modules, the third end of the intelligence MOSFET modules is for receiving control signal, the intelligence 4th end of MOSFET modules is used for output status signal;
Controller module, the first end of the controller module are connect with the third end of the intelligence MOSFET modules, the control The second end of device module processed is connect with the 4th end of the intelligence MOSFET modules;
The intelligence MOSFET modules are used to detect that the level signal of the ground terminal output is low level, lead to The 4th end output high level of the intelligence MOSFET modules is crossed, the controller module is passing through the of the controller module In the case that two terminations receive the high level, high level, the intelligence are exported by the first end of the controller module The intelligence is connected in the case where the third termination by the intelligence MOSFET modules receives high level in MOSFET modules Connection between the first end of MOSFET modules and the second end of the intelligence MOSFET modules is so that the output end is grounded;
The intelligence MOSFET modules are additionally operable in the case where it is high level to detect the level signal of the ground terminal output, Low level is exported by the 4th end of the intelligence MOSFET modules, the controller module is passing through the controller module Second end receive it is described it is low level in the case of, low level, the intelligence are exported by the first end of the controller module MOSFET modules are being received low level by the thirds of intelligence MOSFET modules termination, disconnect the MOSFET Connection between the first end of module and the second end of the intelligence MOSFET modules is so that the output end is hanging.
2. protection circuit according to claim 1, which is characterized in that the first end of the controller module and the intelligence It is serially connected with first resistor between the third end of MOSFET modules.
3. protection circuit according to claim 1, which is characterized in that the second end of the controller module and the intelligence Second resistance, the 4th end of the second resistance and the intelligence MOSFET modules are serially connected between 4th end of MOSFET modules Between node pass through the external high level signal of 3rd resistor.
4. protection circuit according to claim 1, which is characterized in that the intelligence MOSFET modules include:
Controllable switch, one end of the controllable switch are connect with the output end, the second end ground connection of the controllable switch;
Gate drivers, the first end of the gate drivers are connect with the output end, the second end of the gate drivers It is connect with the control terminal of the controllable switch, the second end of the gate drivers also passes through the 4th resistance and the controllable switch Other end connection, the third end ground connection of the gate drivers, the 4th end of the gate drivers and the intelligence The third end of MOSFET modules connects, and the 5th end of the gate drivers and the 4th end of the intelligence MOSFET modules connect It connects.
5. protection circuit according to claim 4, which is characterized in that the second end of the gate drivers and described controllable The 5th resistance is serially connected between the control terminal of switch.
6. protection circuit according to claim 5, which is characterized in that the first end of the gate drivers with it is described controllable Node between one end of switch by the control terminal of the first transient diode and the 5th resistance and the controllable switch it Between node connection.
7. protection circuit according to claim 5, which is characterized in that the control of the 5th resistance and the controllable switch Node between end is grounded by the second transient diode.
8. protection circuit according to claim 4, which is characterized in that the controllable switch includes field-effect tube.
9. protection circuit according to claim 1, which is characterized in that the first end of the intelligence MOSFET modules passes through filter Wave capacity earth.
CN201810761225.7A 2018-07-12 2018-07-12 Protection circuit for power supply ground Active CN108695814B (en)

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