CN108695140A - The cleaning method of base-plate cleaning liquid, preparation method and ic substrate - Google Patents
The cleaning method of base-plate cleaning liquid, preparation method and ic substrate Download PDFInfo
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- CN108695140A CN108695140A CN201810841056.8A CN201810841056A CN108695140A CN 108695140 A CN108695140 A CN 108695140A CN 201810841056 A CN201810841056 A CN 201810841056A CN 108695140 A CN108695140 A CN 108695140A
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- cleaning liquid
- plate cleaning
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- 238000004140 cleaning Methods 0.000 title claims abstract description 135
- 239000000758 substrate Substances 0.000 title claims abstract description 132
- 239000007788 liquid Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 79
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 39
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 39
- 239000002904 solvent Substances 0.000 claims abstract description 27
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 15
- 239000011737 fluorine Substances 0.000 claims abstract description 15
- 229960002415 trichloroethylene Drugs 0.000 claims abstract description 15
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 13
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims abstract description 13
- 235000017557 sodium bicarbonate Nutrition 0.000 claims abstract description 13
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims description 20
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 18
- 230000006837 decompression Effects 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000003344 environmental pollutant Substances 0.000 description 29
- 231100000719 pollutant Toxicity 0.000 description 29
- 239000007789 gas Substances 0.000 description 14
- 239000000356 contaminant Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GCNLQHANGFOQKY-UHFFFAOYSA-N [C+4].[O-2].[O-2].[Ti+4] Chemical compound [C+4].[O-2].[O-2].[Ti+4] GCNLQHANGFOQKY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/12—Carbonates bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
- C11D7/30—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to the production field of ic substrate, the cleaning method of a kind of base-plate cleaning liquid, preparation method and ic substrate is provided.It includes 20-30 parts of supercritical carbon dioxide solvent, 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate, 5-8 parts of trichloro ethylene, 30-40 parts of deionized water, 10-12 parts of ethylene glycol monoethyl ether, 10-15 parts of N-Methyl pyrrolidone, 10-15 parts of sodium bicarbonate that the component of the base-plate cleaning liquid is counted in parts by weight.The base-plate cleaning liquid is good to the cleaning performance of ic substrate, and base-plate cleaning liquid is easily removed, and not damaged to ic substrate.Preparation method is simple, and the base-plate cleaning liquid energy of acquisition is enough to clean substrate well.In addition, the cleaning method of ic substrate comprising substrate is placed in aforesaid substrate cleaning solution and is cleaned.Cleaning performance is good, the excellent performance of ic substrate.
Description
Technical field
The present invention relates to the production fields of ic substrate, in particular to a kind of base-plate cleaning liquid, its preparation side
The cleaning method of method and ic substrate.
Background technology
Wafer Cleaning in ic manufacturing process refers in processes such as oxidation, photoetching, extension, diffusion and lead evaporations
Before, the pollutant and autoxidation object of silicon chip surface are removed using method physically or chemically, to obtain meeting cleannes requirement
Silicon chip surface process.Wafer Cleaning has caused the importance of semi-conductor industry early in the beginning of the fifties height weight of people
Depending on this is because the pollutant of silicon chip surface can seriously affect the performance, reliability and yield rate of device.But in the prior art
Base-plate cleaning liquid cleaning performance it is bad, and be easy to cause ic substrate damage.
Invention content
The purpose of the present invention, such as including providing a kind of base-plate cleaning liquid, it is good to the cleaning performance of ic substrate,
Base-plate cleaning liquid is easily removed, and not damaged to ic substrate.
The purpose of the present invention further includes providing a kind of preparation method of base-plate cleaning liquid, and the preparation method is simple, acquisition
Base-plate cleaning liquid energy is enough to clean substrate well.
The purpose of the present invention further includes providing a kind of cleaning method of ic substrate, utilizes aforesaid substrate cleaning solution
Ic substrate is cleaned, cleaning performance is good, the excellent performance of ic substrate.
What the embodiment of the present invention was realized in:
A kind of base-plate cleaning liquid, it includes 20-30 parts of supercritical carbon dioxide solvent, hydrogen fluorine that component is counted in parts by weight
5-8 parts of alcohol, 5-8 parts of ethyl acetate, 5-8 parts of trichloro ethylene, 30-40 parts of deionized water, 10-12 parts of ethylene glycol monoethyl ether, N- first
10-15 parts of base pyrrolidones, 10-15 parts of sodium bicarbonate.
A kind of preparation method of base-plate cleaning liquid comprising:By 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate and trichloro ethylene
5-8 parts are dissolved in 20-30 parts of supercritical carbon dioxide solvent and obtain the first mixed liquor;Then by ethylene glycol monoethyl ether 10-12
10-15 parts of part, 10-15 parts of N-Methyl pyrrolidone and sodium bicarbonate, which are dissolved in 30-40 parts of deionized water, obtains the second mixing
Liquid;First mixed liquor and the second mixed liquor are mixed.
A kind of cleaning method of ic substrate comprising substrate is placed in aforesaid substrate cleaning solution and is cleaned.
The advantageous effect of the embodiment of the present invention for example including:
In base-plate cleaning liquid provided in an embodiment of the present invention, supercritical carbon dioxide solvent has good dissolubility, and
And its need certain pressure and at a temperature of keep its supercriticality,, can by change pressure and temperature in the present embodiment
So that supercritical carbon dioxide solvent is become carbon dioxide gas, realize the pollutant on dispersion substrate and substrate, and can be
The some of the contaminants on substrate are taken out of during spilling, and since ethyl acetate also has volatility, dirt can be dissolved
Dye object simultaneously takes away some of the contaminants in gas overflowing, and hydrogen fluorine alcohol and trichloro ethylene have preferable dissolubility to pollutant,
Ethylene glycol monoethyl ether, N-Methyl pyrrolidone and sodium bicarbonate can also dissolve pollutant, while sodium bicarbonate holds
It easily decomposes to disperse the pollutant on substrate and substrate, convenient for pollutant to be dissolved in base-plate cleaning liquid.By preparing base
Plate cleaning solution prepares the first mixed liquor and the second mixed liquor respectively by reasonably matching, and is conducive to reinforce between each component
Be mutually dissolved.Then substrate is soaked in base-plate cleaning liquid in advance so that the pollutant on substrate is detached with substrate, and molten
Solution is further cleaned by ultrasonic by first time so that the obstinate pollutant on substrate is in ultrasonic cleaning in base-plate cleaning liquid
Effect is lower to be detached with substrate, to be dissolved in base-plate cleaning liquid.And in being cleaned by ultrasonic second, in certain cooling rate and
Cooling and reduced pressure operation are carried out under certain pressure decay rate so that supercritical carbon dioxide solvent gradually becomes carbon dioxide gas,
With the spilling of carbon dioxide gas, partial impurities can be taken away, and carbon dioxide overflows, it being capable of further disperse contaminants
And substrate, to reinforce the dissolving of pollutant and base-plate cleaning liquid, cleaning performance is more preferably.
Specific implementation mode
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.It is not specified in embodiment specific
Condition person carries out according to conventional conditions or manufacturer's recommended conditions.Reagents or instruments used without specified manufacturer is
The conventional products that can be obtained by commercially available purchase.
Below to the cleaning method of the base-plate cleaning liquid of the embodiment of the present invention, preparation method and ic substrate into
Row illustrates.
An embodiment of the present invention provides a kind of base-plate cleaning liquid, and it includes supercritical carbon dioxide that component is counted in parts by weight
20-30 parts of solvent, 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate, 5-8 parts of trichloro ethylene, 30-40 parts of deionized water, ethylene glycol list
10-15 parts of 10-12 parts of ether, 10-15 parts of N-Methyl pyrrolidone and sodium bicarbonate.
Wherein, carbon dioxide is higher than critical temperature Tc=31.26 DEG C in temperature, and pressure is higher than critical pressure Pc=
In the state of 72.9atm, property can change, and density is bordering on liquid, and viscosity is bordering on gas, and diffusion coefficient is liquid
100 times, thus there is splendid solvability, form supercritical carbon dioxide solvent.In the present embodiment, with overcritical titanium dioxide
Carbon solvent is not readily dissolved in the component of water, such as 5-8 parts of 5-8 parts of hydrogen fluorine alcohol, ethyl acetate in the present embodiment and trichlorine to dissolve
5-8 parts of ethylene.The solubility of hydrogen fluorine alcohol, ethyl acetate and trichloro ethylene can be promoted.And by supercritical carbon dioxide solvent
In base-plate cleaning liquid applied to cleaning ic substrate, the impurity on substrate can be quickly set to be dissolved in solvent.
For hydrogen fluorine alcohol as cleaning agent, ODP zero, GWP are low, and it is non-ignitable, surface tension is small, clean ability it is strong.
Ethyl acetate is slightly soluble in water, has excellent dissolubility, quick-drying, can dissolve each on ic substrate
Kind impurity, and good quick-drying makes ethyl acetate be not easy to remain in the surface of ic substrate.
Trichloro ethylene is insoluble in water, is excellent solvent, is used as metal conditioner and detergent, metal degreasing agent and
The extractant of fat, oil, paraffin.In the present embodiment, it is added trichloro ethylene as a kind of component into base-plate cleaning liquid, it can
There is good cleaning effect to ic substrate.
Deionized water is as solvent, for dissolving remaining component.
Wherein, ethylene glycol monoethyl ether is dissolved in water, a variety of oils, wax and resin etc. is can dissolve, by ethylene glycol in the present embodiment
Single ether is added as a kind of component into base-plate cleaning liquid, can have good cleaning effect to ic substrate.
N-Methyl pyrrolidone is soluble easily in water, can dissolve most of organic and inorganic compound, polar gas, natural and conjunction
At high-molecular compound, substrate surface can be effectively dissolved as the component of base-plate cleaning liquid as excellent solvent
Various impurity, and it is not damaged to substrate, it is also biodegradable.
Sodium bicarbonate is water-soluble, and the heated carbon dioxide and vapor easily decomposited, carbon dioxide and vapor overflow
Go out, enable to the impurity of substrate surface fluffy, consequently facilitating other components dissolved impurity, makees to play good cleaning
With.
The preparation method of base-plate cleaning liquid provided in this embodiment is as follows:By 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate and
5-8 parts of trichloro ethylene is dissolved in 20-30 parts of supercritical carbon dioxide solvent and obtains the first mixed liquor;
Then by 10-15 parts of 10-12 parts of ethylene glycol monoethyl ether, 10-15 parts of N-Methyl pyrrolidone and sodium bicarbonate dissolvings
The second mixed liquor is obtained in 30-40 parts of deionized water;
First mixed liquor and the second mixed liquor are mixed.
The preparation method is simple, and operation is easy, and passes through previously prepared first mixed liquor and the second mixed liquor so that various groups
Get adequately dissolving, be conducive to subsequently to the cleaning of ic substrate, the base-plate cleaning liquid energy of acquisition is enough to carry out substrate
Cleaning well.
In addition, the embodiment of the present invention additionally provides a kind of cleaning method of ic substrate comprising:Substrate is placed in
It is cleaned in aforesaid substrate cleaning solution.
Specifically, the cleaning method of the ic substrate includes the following steps:
S1, first substrate is placed in base-plate cleaning liquid and impregnates 20-30min, substrate is when impregnating, environmental pressure 70-
The temperature of 80atm, cleaning solution are 35-45 DEG C.It is 70-80atm in pressure, the temperature of cleaning solution is right in the environment of 35-45 DEG C
Substrate is impregnated, and the supercritical carbon dioxide solvent in base-plate cleaning liquid can be kept in a supercritical state, to each
The solute effect of a component is good.It is prolonged to impregnate so that readily permeable dust, the greasy dirt etc. on substrate of base-plate cleaning liquid
Between pollutant, and the pollutants such as dust, greasy dirt are dissolved.
S2, ultrasonic cleaning 10-15min for the first time is then carried out under the frequency of 50-70KHz.Make substrate in rotating condition
The velocity of rotation of lower progress first time ultrasonic cleaning, substrate is 10-20r/min.Being cleaned by ultrasonic can utilize ultrasonic wave in liquid
In cavitation, acceleration and direct flow effect to liquid and dirt directly, indirectly-acting, so that crud layer disperse, be newborn
Change, remove and reach cleaning purpose.Along with the operation before using ultrasonic cleaning for the first time, impregnated so that base
Plate cleaning solution is contacted with the pollutant on substrate in advance, and dissolved contaminants, when using being cleaned by ultrasonic for the first time so that pollution
Object is easier to detach with substrate, and is dissolved in base-plate cleaning liquid.
After the completion of S3, ultrasonic cleaning for the first time, substrate is persistently placed in base-plate cleaning liquid, and base-plate cleaning liquid is pressed 1-2
DEG C/cooling rate of min carries out cooling 5-10min, and carries out decompression 5-10min according to the pressure decay rate of 3-5atm/min.
Base-plate cleaning liquid cools down and in pressure reduction, applies second of ultrasonic cleaning 5-10min of progress under the frequency of 80-120KHz.The
Twice ultrasonic cleaning is intermittent cleaning, and second of ultrasonic working time and idle hours ratio are 2:1.Make substrate in rotation
Under the conditions of carry out second and be cleaned by ultrasonic, the velocity of rotation of substrate is 10-20r/min.
During cooling and decompression, supercritical carbon dioxide solvent gradually becomes carbon dioxide gas, and from solution
Middle spilling can further disperse the pollutant on substrate with substrate, and partial impurities during carbon dioxide overflows
It can be discharged with the spilling of carbon dioxide.In the present embodiment, with specific cooling rate and pressure decay rate carry out cooling and
Decompression, can ensure that supercritical carbon dioxide solvent gradually becomes carbon dioxide gas so that the decrease speed of temperature and pressure
Controllably, it is more convenient for cleaning.At the same time, during decrease temperature and pressure, apply compared to the frequency being cleaned by ultrasonic for the first time more
Big frequency carries out second and is cleaned by ultrasonic, and to accelerate the separation of pollutant and substrate, and increases what gas overflowing was taken out of
Pollutant, while being also beneficial to base-plate cleaning liquid dissolved contaminants.Cleaning performance is enabled to by intermittent cleaning more preferably,
The sufficient time is provided for base-plate cleaning liquid dissolved contaminants.
S4, after the completion of second is cleaned by ultrasonic, by substrate after being taken out in base-plate cleaning liquid and being placed in and rinsed in pure water
It is dry.
By drying after being rinsed in pure water, it can will be attached to the residual base-plate cleaning liquid rinsed clean of substrate surface,
Base-plate cleaning liquid is avoided to remain on the surface of the substrate, cleaning effect is more preferably.
Substrate by being soaked in base-plate cleaning liquid by the embodiment of the present invention in advance so that the pollutant on substrate and substrate
Separation, and be dissolved in base-plate cleaning liquid, further it is cleaned by ultrasonic by first time so that the obstinate pollutant on substrate is super
It is detached with substrate under the action of sound cleaning, to be dissolved in base-plate cleaning liquid.And in being cleaned by ultrasonic at second, centainly dropping
Cooling and reduced pressure operation are carried out under warm speed and certain pressure decay rate so that supercritical carbon dioxide solvent gradually becomes titanium dioxide
Carbon gas can take away partial impurities, and carbon dioxide overflows, and can further divide with the spilling of carbon dioxide gas
Pollutant and substrate are dissipated, to reinforce the dissolving of pollutant and base-plate cleaning liquid, cleaning performance is more preferably.
With reference to embodiments to the cleaning side of the base-plate cleaning liquid of the present invention, preparation method and ic substrate
Method is further illustrated.
Embodiment 1
An embodiment of the present invention provides a kind of cleaning methods of ic substrate comprising following steps:
S1, by the way that 6 parts of 6 parts of hydrogen fluorine alcohol, 6 parts of ethyl acetate and trichloro ethylene are dissolved in supercritical carbon dioxide solvent 25
The first mixed liquor is obtained in part;Then 12 parts of 11 parts of ethylene glycol monoethyl ether, 13 parts of N-Methyl pyrrolidone and sodium bicarbonate is molten
Solution obtains the second mixed liquor in 35 parts of deionized water;First mixed liquor and the second mixed liquor are mixed to prepare substrate cleaning agent.
S2, first substrate being placed in base-plate cleaning liquid and impregnates 25min, substrate is when impregnating, environmental pressure 72.9atm,
The temperature of cleaning solution is 40 DEG C.
S3, ultrasonic cleaning 12min for the first time is then carried out under the frequency of 60KHz.Substrate is set to be carried out under rotating condition
It is cleaned by ultrasonic for the first time, the velocity of rotation of substrate is 15r/min.
S4, for the first time be cleaned by ultrasonic after the completion of, substrate is persistently placed in base-plate cleaning liquid, and by base-plate cleaning liquid by 1 DEG C/
The cooling rate of min carries out cooling 10min, and carries out decompression 10min according to the pressure decay rate of 3atm/min.In base-plate cleaning
Liquid cools down and in pressure reduction, applies second of ultrasonic cleaning 5-10min of progress under the frequency of 100KHz.Second of ultrasonic cleaning
For intermittent cleaning, second of ultrasonic working time and idle hours ratio are 2:1.Substrate is set to carry out under rotating condition
Twice ultrasonic cleans, and the velocity of rotation of substrate is 15r/min.
S5, after the completion of second is cleaned by ultrasonic, by substrate after being taken out in base-plate cleaning liquid and being placed in and rinsed in pure water
It is dry.
Embodiment 2
An embodiment of the present invention provides a kind of cleaning methods of ic substrate comprising following steps:
S1, by the way that 5 parts of 5 parts of hydrogen fluorine alcohol, 5 parts of ethyl acetate and trichloro ethylene are dissolved in supercritical carbon dioxide solvent 20
The first mixed liquor is obtained in part;Then 10 parts of 10 parts of ethylene glycol monoethyl ether, 10 parts of N-Methyl pyrrolidone and sodium bicarbonate is molten
Solution obtains the second mixed liquor in 30 parts of deionized water;First mixed liquor and the second mixed liquor are mixed to prepare substrate cleaning agent.
S2, first substrate is placed in base-plate cleaning liquid and impregnates 20min, substrate is when impregnating, environmental pressure 75atm, clearly
The temperature of washing lotion is 35 DEG C.
S3, ultrasonic cleaning 15min for the first time is then carried out under the frequency of 50KHz.Substrate is set to be carried out under rotating condition
It is cleaned by ultrasonic for the first time, the velocity of rotation of substrate is 20r/min.
S4, for the first time be cleaned by ultrasonic after the completion of, substrate is persistently placed in base-plate cleaning liquid, and by base-plate cleaning liquid by 2 DEG C/
The cooling rate of min carries out cooling 5min, and carries out decompression 5min according to the pressure decay rate of 5atm/min.In base-plate cleaning liquid
In cooling and pressure reduction, applies and carry out second of ultrasonic cleaning 5min under the frequency of 80KHz.Between second of ultrasonic cleaning is
Formula of having a rest is cleaned, and second of ultrasonic working time and idle hours ratio are 2:1.Substrate is set to be carried out under rotating condition second
It is cleaned by ultrasonic, the velocity of rotation of substrate is 10r/min.
S5, after the completion of second is cleaned by ultrasonic, by substrate after being taken out in base-plate cleaning liquid and being placed in and rinsed in pure water
It is dry.
Embodiment 3
An embodiment of the present invention provides a kind of cleaning methods of ic substrate comprising following steps:
S1, by the way that 8 parts of 8 parts of hydrogen fluorine alcohol, 8 parts of ethyl acetate and trichloro ethylene are dissolved in supercritical carbon dioxide solvent 30
The first mixed liquor is obtained in part;Then 15 parts of 12 parts of ethylene glycol monoethyl ether, 15 parts of N-Methyl pyrrolidone and sodium bicarbonate is molten
Solution obtains the second mixed liquor in 40 parts of deionized water;First mixed liquor and the second mixed liquor are mixed to prepare substrate cleaning agent.
S2, first substrate is placed in base-plate cleaning liquid and impregnates 30min, substrate is when impregnating, environmental pressure 79atm, clearly
The temperature of washing lotion is 45 DEG C.
S3, ultrasonic cleaning 10min for the first time is then carried out under the frequency of 70KHz.Substrate is set to be carried out under rotating condition
It is cleaned by ultrasonic for the first time, the velocity of rotation of substrate is 10r/min.
S4, for the first time be cleaned by ultrasonic after the completion of, substrate is persistently placed in base-plate cleaning liquid, and by base-plate cleaning liquid by 1 DEG C/
The cooling rate of min carries out cooling 8min, and carries out decompression 8min according to the pressure decay rate of 4atm/min.In base-plate cleaning liquid
In cooling and pressure reduction, applies and carry out second of ultrasonic cleaning 6min under the frequency of 120KHz.Between second of ultrasonic cleaning is
Formula of having a rest is cleaned, and second of ultrasonic working time and idle hours ratio are 2:1.Substrate is set to be carried out under rotating condition second
It is cleaned by ultrasonic, the velocity of rotation of substrate is 20r/min.
S5, after the completion of second is cleaned by ultrasonic, by substrate after being taken out in base-plate cleaning liquid and being placed in and rinsed in pure water
It is dry.
In conclusion in base-plate cleaning liquid provided in an embodiment of the present invention, supercritical carbon dioxide solvent has good
Dissolubility, and its need certain pressure and at a temperature of keep its supercriticality, in the present embodiment, by change pressure with
Temperature can make supercritical carbon dioxide solvent become carbon dioxide gas, realize the pollutant on dispersion substrate and substrate, and
And can take some of the contaminants on substrate out of during spilling, and since ethyl acetate also has volatility, energy
Enough dissolved contaminants simultaneously take away some of the contaminants in gas overflowing, and hydrogen fluorine alcohol and trichloro ethylene have preferably pollutant
Dissolubility, ethylene glycol monoethyl ether, N-Methyl pyrrolidone and sodium bicarbonate can also dissolve pollutant, while carbonic acid
Hydrogen sodium is easy to decompose to disperse the pollutant on substrate and substrate, convenient for pollutant to be dissolved in base-plate cleaning liquid.Pass through
Base-plate cleaning liquid is prepared, by reasonably matching, prepares the first mixed liquor and the second mixed liquor respectively, is conducive to reinforce each group
/ be mutually dissolved.Then substrate is soaked in base-plate cleaning liquid in advance so that the pollutant on substrate and substrate point
From, and be dissolved in base-plate cleaning liquid, further it is cleaned by ultrasonic by first time so that the obstinate pollutant on substrate is in ultrasound
It is detached with substrate under the action of cleaning, to be dissolved in base-plate cleaning liquid.And in being cleaned by ultrasonic at second, centainly cooling down
Cooling and reduced pressure operation are carried out under speed and certain pressure decay rate so that supercritical carbon dioxide solvent gradually becomes carbon dioxide
Gas can take away partial impurities, and carbon dioxide overflows, and can further disperse with the spilling of carbon dioxide gas
Pollutant and substrate, to reinforce the dissolving of pollutant and base-plate cleaning liquid, cleaning performance is more preferably.
It these are only the preferred embodiment of the present invention, be not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.Any modification made by all within the spirits and principles of the present invention,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of base-plate cleaning liquid, which is characterized in that it includes supercritical carbon dioxide solvent 20-30 that its component is counted in parts by weight
Part, 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate, 5-8 parts of trichloro ethylene, 30-40 parts of deionized water, ethylene glycol monoethyl ether 10-12
10-15 parts of part, 10-15 parts of N-Methyl pyrrolidone and sodium bicarbonate.
2. a kind of preparation method of base-plate cleaning liquid, which is characterized in that it includes:By 5-8 parts of hydrogen fluorine alcohol, 5-8 parts of ethyl acetate
It is dissolved in 20-30 parts of supercritical carbon dioxide solvent with 5-8 parts of trichloro ethylene and obtains the first mixed liquor;
Then 10-15 parts of 10-12 parts of ethylene glycol monoethyl ether, 10-15 parts of N-Methyl pyrrolidone and sodium bicarbonate are dissolved in
The second mixed liquor is obtained in 30-40 parts of ionized water;
First mixed liquor and second mixed liquor are mixed.
3. a kind of cleaning method of ic substrate, which is characterized in that it includes:Substrate is placed in as described in claim 1
Base-plate cleaning liquid in cleaned.
4. the cleaning method of ic substrate according to claim 3, which is characterized in that the substrate is first placed in institute
It states and impregnates 20-30min in base-plate cleaning liquid, then carry out being cleaned by ultrasonic 10-15min for the first time under the frequency of 50-70KHz.
5. the cleaning method of ic substrate according to claim 4, which is characterized in that in the base-plate cleaning liquid
Impregnating the substrate includes:The substrate is soaked in 35-45 DEG C of the base-plate cleaning in the environment that pressure is 70-80atm
In liquid.
6. the cleaning method of ic substrate according to claim 4, which is characterized in that the first time is cleaned by ultrasonic
After the completion, the substrate is persistently placed in the base-plate cleaning liquid, and by the base-plate cleaning liquid by the cooling speed of 1-2 DEG C/min
Degree carries out cooling 5-10min, and carries out decompression 5-10min according to the pressure decay rate of 3-5atm/min.
7. the cleaning method of ic substrate according to claim 6, which is characterized in that dropped in the base-plate cleaning liquid
In mild pressure reduction, applies and carry out second of ultrasonic cleaning 5-10min under the frequency of 80-120KHz.
8. the cleaning method of ic substrate according to claim 7, which is characterized in that second of ultrasonic cleaning
For intermittent cleaning, second of ultrasonic working time and idle hours ratio are 2:1.
9. the cleaning method of ic substrate according to claim 7, which is characterized in that clear in second of ultrasound
After the completion of washing, the substrate is placed in pure water drying after rinsing from taking-up in the base-plate cleaning liquid.
10. the cleaning method of ic substrate according to claim 7, which is characterized in that make the substrate in rotation
Under the conditions of carry out that first time is cleaned by ultrasonic and described second is cleaned by ultrasonic, the velocity of rotation of the substrate is 10-20r/
min。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112764329A (en) * | 2019-10-21 | 2021-05-07 | 昆山晶科微电子材料有限公司 | Supercritical CO2Photoresist removing liquid and method for removing photoresist |
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Application publication date: 20181023 |