CN108693715A - Promote the multiple target light source and photomask optimization method of full filed optical patterning uniformity - Google Patents
Promote the multiple target light source and photomask optimization method of full filed optical patterning uniformity Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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Abstract
The present invention provides a kind of multiple target light sources and photomask optimization method promoting full filed optical patterning uniformity, by the average value that objective function is each visual field dot pattern error, to consider the full filed Polarization aberration information of lithographic objective in optimization process.Therefore, the light source and mask that the present invention optimizes are not only applicable to the optical patterning of specific visual field point, and are suitable for full filed optical patterning.For the big visual field lithographic objective containing Polarization aberration, the above effect helps to improve full filed optical patterning uniformity, ensures the yield of photoetching process.
Description
Technical field
The present invention relates to a kind of multiple target light sources and photomask optimization method promoting full filed optical patterning uniformity, belong to
Photoetching resolution enhances technical field.
Background technology
Photoetching technique is the key technology of super large-scale integration manufacturing field.The deep ultraviolet light of industrial quarters mainstream at present
The operation wavelength of etching system is 193nm, and as photoetching process node is displaced downwardly to 45-14nm, the minimum feature of integrated circuit is
Far smaller than optical source wavelength.At this point, the interference of light wave and diffraction phenomena are more notable, cause the distortion of optical patterning, offset or
Resolution ratio declines;Therefore, lithography system must use RET, to improve optical patterning resolution ratio and anti-aliasing
Degree, ensures the yield of photoetching process.Light source-photomask optimization technology (source mask optimization, abbreviation SMO) is
A kind of important high-freedom degree photoetching resolution enhancing technology, passes through and optimizes intensity of light source distribution and mask transmitance point
Cloth is modulated the amplitude and phase of mask diffraction spectrum, to improve optical patterning quality.
Currently, for the immersion projection lithography system of big visual field, the corresponding Polarization aberration of lithographic objective difference visual field point
Difference.Since Polarization aberration is the key factor of impact vector light wave imaging, this species diversity will lead to the areas silicon chip Shang Ge
Domain imaging is uneven, and photoetching process yield is caused to decline.
The Chinese patent of Publication No. CN 102269926B is for ultra-high numerical aperture (numerical aperture, letter
Claim NA) Polarization aberration of lithographic objective and the defocus error of lithography system, it is proposed that a kind of unreasonably based on vector imaging model
Think that lithography system optical proximity effect corrects (optical proximity correction, abbreviation OPC) method.This method
The defocus error of the Polarization aberration and lithography system of superelevation NA lithographic objectives is considered, the mask graph optimized is more suitable for
Actual photoetching process.But this method has ignored the difference of the Polarization aberration of lithographic objective difference visual field point, it is difficult to take into account complete
The uniformity of visual field optical patterning limits further increasing for photoetching process yield.
The source of lithographic objective Polarization aberration, including but not limited to:Scattering, film layer and the crystal birefringence effect of lens surface
It answers.Factors above can cause the variation of imaging intensity of wave, phase and polarization state, and then influence imaging resolution and fidelity
Degree.In addition, the corresponding Polarization aberration of lithographic objective difference visual field point also difference.Therefore, it is necessary to one kind considering photoetching
Light source-photomask optimization method of each visual field point Polarization aberration of object lens, with compensating polarizing aberration to the influence at optical patterning performance,
Realize the uniform optical patterning in full filed.
Invention content
The purpose of the present invention is in the case where considering each visual field point Polarization aberration of lithographic objective, provide a kind of more mesh
Light source-photomask optimization method is marked, this method is directed to the otherness of lithographic objective full filed Polarization aberration, devises while comprising each
The optimization object function of visual field point Polarization aberration information, light source, the mask for so that optimization is obtained using optimization object function are regarding entirely
More uniform optical patterning is obtained in the range of field.
Realize that technical solution of the invention is as follows:
The multiple target light source and photomask optimization method, feature of the promotion full filed optical patterning uniformity of the present invention exist
In including the following steps:
Step 1: initialization light source figure and mask graph;
Step 2: constitution optimization object function D:
Based on the corresponding Polarization aberration PA of i-th of visual field point of lithographic objectivei, determine that the corresponding imaging of i-th of visual field point is protected
True degree functionWherein i=1,2 ..., n, n are visual field point quantity;For target
The pixel value of each pixel of figure;Z(x,y,PAi) indicate to consider Polarization aberration PAiIn the case of, utilize optical patterning model meter
The pixel value of each pixel in the corresponding photoresist imaging of current light source figure and mask graph of calculation;Object function D is constructed
It is imaged fidelity average value of a function for each visual field point of lithographic objective, i.e.,
Step 3: being based on the optimization object function D, light source and mask are optimized.
Preferably, the detailed process of the step 3 is:
Step 401, calculating target function D are for the corresponding light source matrix of variables Ω of current light source figuresGradient matrix
▽D(Ωs), then obtain the approximation of gradient matrixCalculating target function D is corresponding for current mask figure
Mask matrix of variables ΩMGradient matrix ▽ D (ΩM);Utilize steepest descent method, more new light sources matrix of variables ΩsForObtain corresponding current ΩsLight source figure J;Utilize steepest descent method, more new mask matrix of variables ΩM
ForWhereinFor preset photomask optimization step-length, corresponding current Ω is obtainedMMask graph
M;The binary mask figure M of the corresponding current mask figure M of updateb;
Step 402 calculates current light source figure J and binary mask figure MbThe value of corresponding object function D;When the value is small
In predetermined threshold or more new light sources matrix of variables ΩsWith mask matrix of variables ΩMNumber when reaching predetermined upper limit value, into step
Rapid 403, otherwise return to step 401;
Step 403 terminates optimization, and by current light source figure J and binary mask figure MbIt is determined as after optimization
Light source figure and mask graph.
Preferably, the detailed process of the step 1 is:
Light source is initialized size as N by step 301S×NSLight source figure J, by mask graph M be initialized as size be N
The targeted graphical of × NWherein NSIt is integer with N;
The pixel value of light-emitting zone is 1 in step 302, setting primary light source figure J, and the pixel value of light-emitting zone is not 0;
It is sized as NS×NSLight source matrix of variables Ωs:As J (xs,ysWhen)=1,As J (xs,ysWhen)=0,Wherein J (xs,ys) indicate pixel (x on light source figures,ys) pixel value;Initial mask figure is set
The transmissivity of M transmission regions is 1, and the transmissivity of light is 0;It is sized the mask matrix of variables Ω for N × NM:Work as M
When (x, y)=1,As M (x, y)=0,Wherein M (x, y) is indicated on mask graph
The transmitance of each pixel (x, y);Enable initial binary mask graph Mb=M.
Preferably, the Polarization aberration PAiBefore considering lens surface scattering, film layer and crystal birefringence effects
It puts and is calculated.
The present invention has the advantages that:
The present invention is by the average value that objective function is each visual field dot pattern error, to which synthesis is examined in optimization process
The full filed Polarization aberration information of lithographic objective is considered.Therefore, the light source and mask that the present invention optimizes, are not only applicable to spy
Determine the optical patterning of visual field point, and is suitable for full filed optical patterning.For the big visual field lithographic objective containing Polarization aberration,
The above effect helps to improve full filed optical patterning uniformity, ensures the yield of photoetching process.
Description of the drawings
Fig. 1 is the flow chart of optimization method of the present invention.
Fig. 2 is multiple target light source-photomask optimization method flow diagram that the present embodiment is directed to non-ideal lithography system.
Fig. 3 is the schematic diagram being imaged in primary light source, initial mask and its corresponding photoresist.
Fig. 4 is light source figure, the mask graph after being optimized using the relevant technologies (CN 102269926 B, 2012.08.15)
And its schematic diagram being imaged in corresponding photoresist.
Fig. 5 is using light source figure, the mask artwork after multiple target light source proposed by the present invention-photomask optimization method optimization
The schematic diagram being imaged in shape and its corresponding photoresist.
Fig. 6 is using multiple target light source-photomask optimization method proposed by the present invention for the light after the optimization of full filed Polarization aberration
Source figure, mask graph schematic diagram.
Specific implementation mode
Further the present invention is described in detail below in conjunction with the accompanying drawings.
The principle of the present invention:In the base of the optimization method of the non-ideal lithography system OPC based on Abbe vector imaging models
On plinth, the present invention devises while including the optimization object function of each visual field point Polarization aberration information of lithographic objective so that optimization
Obtained light source and mask can obtain preferable exposure effect within the scope of full filed, be effectively improved full filed and be photo-etched into
As uniformity.
As shown in Figure 1, a kind of multiple target light source-photomask optimization method promoting full filed optical patterning uniformity, specifically
Process is:
Step 1: initialization light source figure and mask graph;
Step 2, constitution optimization object function D:
If F is imaging fidelity function, the corresponding Polarization aberration PA of i-th of visual field point of lithographic objective is consideredi, thenWhereinFor the pixel value of each pixel of targeted graphical, Z (x, y, PAi) indicate
Consider Polarization aberration PAi, calculated in current light source figure and the corresponding photoresist imaging of mask graph using optical patterning model
The pixel value of each pixel;Object function D is configured to each visual field point of lithographic objective and is imaged fidelity average value of a function, i.e.,
Step 3: being based on the object function, light source and mask are optimized.
As shown in Fig. 2, the present embodiment establishes multiple target light source-photomask optimization method for full filed Polarization aberration,
The specific steps are:
(1), it is N by light source initialization sizeS×NSLight source figure J, by mask graph M be initialized as size be N × N
Targeted graphicalWherein NSIt is integer with N.
(2), the pixel value of light-emitting zone is 1 on setting primary light source figure J, and the pixel value of light-emitting zone is not 0;Setting
Size is NS×NSLight source matrix of variables Ωs:As J (xs,ysWhen)=1,As J (xs,ysWhen)=0,Wherein J (xs,ys) indicate each pixel (x on light source figures,ys) pixel value;Initial mask figure is set
The transmissivity of shape M transmission regions is 1, and the transmissivity of light is 0;It is sized the mask matrix of variables Ω for N × NM:When
When M (x, y)=1,As M (x, y)=0,Wherein M (x, y) is indicated on mask graph
The transmitance of each pixel (x, y);Enable initial binary mask graph Mb=M.
(3), constitution optimization object function D;If F is imaging fidelity function, i-th visual field point pair of lithographic objective is considered
The Polarization aberration PA answeredi, thenWhereinFor the pixel of each pixel of targeted graphical
Value, Z (x, y, PAi) indicate to consider Polarization aberration PAi, current light source figure and mask artwork are calculated using photoetching vector imaging model
The pixel value of each pixel is imaged in the corresponding photoresist of shape;Object function D is configured to each visual field point imaging of lithographic objective to protect
True degree average value of a function, i.e.,
With reference to the prior art (CN 102269926B, 2012.08.15), the case where considering lithography system Polarization aberration
Under, the aerial image calculated corresponding to current light source and mask using Abbe vector imaging model is:
Wherein,||Indicate that last result of calculation I is to each element modulus in matrix
The scalar matrix (if all elements in a matrix are scalar, being called scalar matrix) that one size is N × N, table
Show current light source and the corresponding aerial image intensity distribution of mask.For light source point J (xs, ys) corresponding to mask diffraction square
Battle array is defined as on mask each point and arrives light source point J (x according to Thelma Hopkins approximations,ys) light path, i.e.,:
Wherein NA indicates that the object-side numerical aperture of optical projection system, pixel indicate the length of side of all subregion on mask graph.
Indicate that convolution, ⊙ indicate that the corresponding element of two matrixes is directly multiplied, Table
Show inverse fourier transform, nwIndicate that the refractive index of lithography system image space immersion liquid, R are the reduction magnification of preferred view system,
Generally 4;V′pBy vector matrix (if the element in a matrix is vector or matrix, being called vector matrix)In each element p-component composition;P herein indicates the polarization direction of light, embodies imaging mould
The vectorial property of type, and PA is the Polarization aberration for indicating lithography system.Theoretical according to the polarization of light, PA is 2 × 2 under normal circumstances
Complex matrix (Jones matrix).The specific calculating process of V ' is in the prior art (CN 102269926 B, 2012.08.15)
It has a detailed description, details are not described herein again.
Using sigmoid functions come approximate description photoetching effect,Wherein, a
Indicate the slope of photoresist approximate model, trIndicate the threshold value of photoresist approximate model.Therefore, it is calculated according to aerial image intensity I
It is imaged as in light source figure and the corresponding photoresist of mask graph:
According to above-mentioned calculating process, the corresponding Polarization aberration PA of each visual field point is consideredi, each visual field point is calculated
Imaging fidelity function after take arithmetic mean, you can find out the concrete numerical value of object function D.
(4), consider the corresponding Polarization aberration PA of each visual field pointi, with this condition, calculating target function D is for light
Source variable matrix ΩsGradient matrix ▽ D (Ωs), by the sum of pixel value of each pixel J on light source figuresumIt is approximately given
Constant obtains the approximation of gradient matrixCalculating target function D is for mask matrix of variables ΩMGradient matrix ▽
D(ΩM).Gradient matrix ▽ D (ΩM) be object function D to matrix of variables ΩMIn each element ask obtained by partial derivative.
The Polarization aberration considered in the present invention, from lens surface scattering, film layer and crystal birefringence effect etc. because
Element.The Polarization aberration data used in the present invention can repeatedly be reflected by CODE V software Geometrical Optics in projection objective
It is obtained with reflection.In a particular application, the Polarization aberration data of lithographic objective can also be obtained by practical measurement.
According to step (3) it is found that gradient matrixGradient matrix
Bibliography (J.Opt.Soc.Am.A, 2013,30:112-123), ▽ F are providedi(ΩS) and ▽ Fi(ΩM) concrete form:
Wherein,*Expression takes conjugate operation,oIt indicates matrix upper rotating 180 degree horizontal and vertical.Calculate different visual fields
The corresponding ▽ F of pointi(ΩS) and ▽ Fi(ΩM) when, it only need to beIn bring different Polarization aberration data into.
Utilize steepest descent method, more new light sources matrix of variables ΩsForObtain corresponding current Ωs's
Light source figure J,Utilize steepest descent method, more new mask matrix of variables ΩMForWhereinFor preset photomask optimization step-length, corresponding current Ω is obtainedMMask graph M,The binary mask figure M of the corresponding current M of updateb,One
As in the case of tmIt is taken as 0.5.
(5), current light source figure J and binary mask figure M is calculatedbThe value of corresponding object function D;When the value is less than in advance
Determine threshold value δ D or more new light sources matrix of variables ΩsWith mask matrix of variables ΩMNumber reach predetermined upper limit value KSMWhen, enter
(6), (4) otherwise are returned to.
(6), optimization is terminated, and by current light source figure J and binary mask figure MbIt is determined as the light source after optimization
Figure and mask graph.
The embodiment of the present invention:
It is illustrated in figure 3 lithographic objective visual field point position view, the corresponding Polarization aberration of each visual field point is to pass through optics
Design software CODE V carry out what ray tracing obtained.Under normal circumstances, the corresponding Polarization aberration numerical value of peripheral field point F11 is most
Greatly, the corresponding Polarization aberration numerical value of central vision point F3 is minimum.
It is illustrated in figure 4 the schematic diagram being imaged in primary light source, initial mask and its corresponding photoresist.In Fig. 4,
401 be primary light source figure, and white represents luminous component, and black represents not luminous component.402 be initial mask figure, simultaneously
It is also targeted graphical, white represents transmission region, and black represents light, characteristic size 45nm.
It is illustrated in figure 5 and is directed to the corresponding Polarization aberrations of extreme visual field point F11, using the relevant technologies (CN
102269926B, 2012.08.15) light source figure, mask graph schematic diagram after (under be abbreviated as method A) optimization.In Figure 5,
501 is using the light source figures after method A optimizations;502 is using the mask graphs after method A optimizations.
It is illustrated in figure 6 and (due to symmetry, considers F1~F3, F6~F8, F11 here for full filed Polarization aberration
~F13 corresponding Polarization aberrations of totally 9 visual field points), using multiple target light source-photomask optimization method proposed by the present invention (lower letter
Be denoted as method B) optimization after light source figure, mask graph schematic diagram.In figure 6,601 is using the light sources after method A optimizations
Figure;602 is using the mask graphs after method A optimizations.
Optical patterning quality is described used here as pattern error, under hard -threshold photoresist model, it is believed that figure misses
Difference is approximately equal to imaging fidelity.Table 1 gives method A and method B in the different pattern error data for regarding site imaging:
Table 1 respectively regards the corresponding pattern error data of site distinct methods
Table 1 statistics indicate that, for method A, optical patterning quality is higher at extreme visual field point F11, in central vision point
Optical patterning effect is poor at F3.This is because method A is optimized just for the corresponding Polarization aberrations of F11, optimum results are only
Suitable for F11 and its close visual field point, it is not suitable for the F3 visual field points of distance F11 farther out.For method B, due to optimizing
The Polarization aberration information of 9 visual field points is considered in journey, therefore it is suitable for full filed optical patternings, i.e., regard site each
The pattern error of imaging is average.Further, it can be calculated by the data of table 1, method A is imaged in 9 visual field points
Pattern error average value be 690, standard deviation 103, PV values be 263;The pattern error that method B is imaged in 9 visual field points
Average value be 822, standard deviation 195, PV values be 503.Data above comparison shows to compare existing method A, institute of the present invention
Image quality of the method B of proposition within the scope of full filed is more uniform (standard deviation, PV values reduce), whole pattern error
Declined, be conducive to the promotion of photoetching process yield, embodies the superiority of the present invention.
Although being described in conjunction with the accompanying the specific implementation mode of the present invention, it will be apparent to those skilled in the art that
Without departing from the principles of the invention, several deformations can also be made, replaces and improves, these also should be regarded as belonging to the present invention
Protection domain.
Claims (4)
1. a kind of multiple target light source-photomask optimization method promoting full filed optical patterning uniformity, which is characterized in that including such as
Lower step:
Step 1: initialization light source figure and mask graph;
Step 2: constitution optimization object function D:
Based on the corresponding Polarization aberration PA of i-th of visual field point of lithographic objectivei, determine the corresponding imaging fidelity letter of i-th of visual field point
NumberWherein i=1,2 ..., n, n are visual field point quantity;It is each for targeted graphical
The pixel value of pixel;Z(x,y,PAi) indicate to consider Polarization aberration PAiIn the case of, worked as using what optical patterning model calculated
The pixel value of each pixel in front light-source figure and the corresponding photoresist imaging of mask graph;Object function D is configured to photoetching
Each visual field point of object lens is imaged fidelity average value of a function, i.e.,
Step 3: being based on the optimization object function D, light source and mask are optimized.
2. low error suseptibility multiple target light source-photomask optimization method based on vector imaging model according to claim 1,
The detailed process of the step 3 is:
Step 401, calculating target function D are for the corresponding light source matrix of variables Ω of current light source figuresGradient matrix ▽ D
(Ωs), then obtain the approximation of gradient matrixCalculating target function D is for the corresponding mask of current mask figure
Matrix of variables ΩMGradient matrix ▽ D (ΩM);Utilize steepest descent method, more new light sources matrix of variables ΩsForObtain corresponding current ΩsLight source figure J;Utilize steepest descent method, more new mask matrix of variables ΩM
ForWhereinFor preset photomask optimization step-length, corresponding current Ω is obtainedMMask graph
M;The binary mask figure M of the corresponding current mask figure M of updateb;
Step 402 calculates current light source figure J and binary mask figure MbThe value of corresponding object function D;When the value is less than in advance
Determine threshold value or more new light sources matrix of variables ΩsWith mask matrix of variables ΩMNumber when reaching predetermined upper limit value, enter step
403, otherwise return to step 401;
Step 403 terminates optimization, and by current light source figure J and binary mask figure MbIt is determined as the light source figure after optimization
Shape and mask graph.
3. a kind of multiple target light source-photomask optimization method promoting full filed optical patterning uniformity according to claim 2,
It is characterized in that, the detailed process of the step 1 is:
Light source is initialized size as N by step 301S×NSLight source figure J, by mask graph M be initialized as size be N × N
Targeted graphicalWherein NSIt is integer with N;
The pixel value of light-emitting zone is 1 in step 302, setting primary light source figure J, and the pixel value of light-emitting zone is not 0;Setting
Size is NS×NSLight source matrix of variables Ωs:As J (xs,ysWhen)=1,As J (xs,ysWhen)=0,Wherein J (xs,ys) indicate pixel (x on light source figures,ys) pixel value;Initial mask figure is set
The transmissivity of M transmission regions is 1, and the transmissivity of light is 0;It is sized the mask matrix of variables Ω for N × NM:Work as M
When (x, y)=1,As M (x, y)=0,Wherein M (x, y) indicates each on mask graph
The transmitance of pixel (x, y);Enable initial binary mask graph Mb=M.
4. a kind of multiple target light source-photomask optimization method promoting full filed optical patterning uniformity according to claim 1,
It is characterized in that, the Polarization aberration PAiUnder the premise of considering lens surface scattering, film layer and crystal birefringence effects
It is calculated.
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| CN111965935A (en) * | 2020-09-04 | 2020-11-20 | 东方晶源微电子科技（北京）有限公司深圳分公司 | Light source, polarization and mask combined optimization method and electronic equipment |
| CN112578644A (en) * | 2020-12-08 | 2021-03-30 | 北京理工大学 | Self-adaptive full-chip light source optimization method and system |
| CN114547855A (en) * | 2022-01-17 | 2022-05-27 | 北京理工大学 | Multi-objective automatic optimization method for optical imaging system |
| CN114547855B (en) * | 2022-01-17 | 2024-05-24 | 北京理工大学 | Multi-objective automatic optimization method for optical imaging system |
| CN114692562A (en) * | 2022-03-16 | 2022-07-01 | 北京理工大学 | High-precision hybrid dynamic priority multi-objective optimization method |
| CN114692562B (en) * | 2022-03-16 | 2024-05-24 | 北京理工大学 | High-precision hybrid dynamic priority multi-objective optimization method |
| CN117454831A (en) * | 2023-12-05 | 2024-01-26 | 武汉宇微光学软件有限公司 | Mask pattern optimization method and system and electronic equipment |
| CN117454831B (en) * | 2023-12-05 | 2024-04-02 | 武汉宇微光学软件有限公司 | Mask pattern optimization method and system and electronic equipment |
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