CN108693600B - Method for improving ultraviolet light absorption rate of graphene - Google Patents
Method for improving ultraviolet light absorption rate of graphene Download PDFInfo
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- CN108693600B CN108693600B CN201810865469.XA CN201810865469A CN108693600B CN 108693600 B CN108693600 B CN 108693600B CN 201810865469 A CN201810865469 A CN 201810865469A CN 108693600 B CN108693600 B CN 108693600B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000031700 light absorption Effects 0.000 title claims abstract description 9
- 239000003989 dielectric material Substances 0.000 claims abstract description 64
- 238000010521 absorption reaction Methods 0.000 claims abstract description 63
- 239000013307 optical fiber Substances 0.000 claims abstract description 27
- 230000010355 oscillation Effects 0.000 claims abstract description 5
- 238000004088 simulation Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/241—Light guide terminations
- G02B6/243—Light guide terminations as light absorbers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/241—Light guide terminations
Abstract
The invention discloses a method for improving ultraviolet light absorptivity of graphene, which is characterized by comprising the following steps: step 1: laying graphene (3) on the surface of the dielectric material (2); step 2: optimizing the ultraviolet-near infrared absorption of the graphene (3) by a numerical simulation method; and step 3: the s-polarized light is adopted, the wedge angle of the wedge optical fiber (1) is gradually increased, an oscillation mode that incident photon energy in air is gradually coupled to the angle theta is formed, and the absorption of the graphene (3) on ultraviolet-near infrared light in a specific wavelength range is gradually improved; and 4, step 4: when the thickness of the dielectric material (2) is increased, the central wavelength is changed linearly; and 5: the expected ultraviolet-near infrared light absorption is obtained by selecting a proper theta angle and the thickness of the dielectric material (2). The invention can efficiently absorb ultraviolet-near infrared light.
Description
Technical Field
The invention relates to a method for improving ultraviolet light absorption rate of graphene, and belongs to the technical field of navigation mark equipment.
Background
Compared with the traditional three-dimensional material, the two-dimensional material has excellent electronic and optical properties, and with the appearance of a two-dimensional transverse heterojunction, the study on the light trapping structure of the sub-nanometer two-dimensional material has important significance in the fields of photoelectric detection, photovoltaic devices, photoluminescence, Raman spectroscopy, optical sensing, photoelectric modulation and the like. As the most popular two-dimensional material, graphene has attracted much attention in the optical field, and is systematically studied from the ultraviolet to terahertz bands. In the middle infrared to terahertz wave band, the graphene can excite the plasmon effect, so that the interaction between light and a medium can be enhanced. However, in the ultraviolet to terahertz wave band, intrinsic graphene can be regarded as a lossy two-dimensional conductive plane, due to the thickness of a monoatomic layer, graphene can only absorb 2.3% of light in the visible light to the near infrared, due to the saddle point singularity of the graphene energy band, the electrical conductivity of graphene shows a significant asymmetric peak value when the free space wavelength is 268nm, so that the absorption rate of graphene to light in the ultraviolet range is higher than that of the visible light wave band, but the ultraviolet absorption rate of suspended graphene is still lower than 9%, and in order to enhance the optical absorption of graphene in the ultraviolet to near infrared wave band, many researches have been made to adopt a special photon nanostructure to enhance the absorption of light in the single-layer graphene, such as a dielectric waveguide, an optical crystal, an integrated microcavity and the like. However, almost all of the existing methods require a complicated manufacturing process, and adding sub-wavelength nano-patterns inside or outside the graphene layer inevitably increases the manufacturing cost and affects the photoelectric properties of graphene, especially in the ultraviolet band.
Disclosure of Invention
The invention provides a method for improving the ultraviolet light absorption rate of graphene, aiming at overcoming the defects in the prior art.
In order to solve the technical problems, the invention provides the following technical scheme:
a method for improving ultraviolet light absorptivity of graphene is designed, and comprises the following steps:
step 1: directly depositing a dielectric material on the end face of the wedge-cleaved optical fiber with a specific inclination angle, and flatly paving graphene on the surface of the dielectric material; the optical fiber is obliquely split into an angle theta, the transmission of light is blocked by utilizing the total reflection effect of light, the absorption of incident light by graphene is enhanced by introducing a dielectric material film with sub-wavelength thickness, the dielectric material is directly deposited on the end face of the obliquely split optical fiber with a specific inclination angle, and the graphene is flatly laid on the surface of the dielectric material.
Step 2: the ultraviolet-near infrared absorption of the graphene is optimized by a numerical simulation method, the conductivity of the graphene shows a remarkable asymmetric peak value when the free space wavelength is 268nm, the absorption rate of the graphene to light in an ultraviolet range is higher than that of a visible light wave band, and the ultraviolet absorption rate of the suspended graphene is lower than 9%;
and step 3: the s-polarized light is adopted, the wedge angle of the wedge optical fiber is gradually increased, an oscillation mode that incident photon energy in air is gradually coupled to the theta angle is formed, and the absorption of the graphene on ultraviolet-near infrared light in a specific wavelength range is gradually improved;
and 4, step 4: when the thickness of the dielectric material is increased, the central wavelength also changes linearly, because the phase change of coherent light in the dielectric material can be kept constant only when the central wavelength and the thickness of the dielectric material change synchronously; while the thickness of the dielectric material is increased, a high-order absorption peak appears at one end of short wave, which is generated by high-order interference absorption;
and 5: in practical application, the expected ultraviolet-near infrared light absorption is obtained by selecting a proper theta angle and a proper thickness of the dielectric material.
Preferably, the optical fiber in step 1 is made of silicon dioxide, the dielectric material is made of aluminum oxide, and the graphene is a graphene monoatomic layer.
Preferably, in the step 3, when the thickness of the dielectric material is 35nm and the θ angle is 88.4 °, the absorption rate of the ultraviolet-near infrared light at 270nm exceeds 99.9%, when the thickness of the dielectric material is increased from 35nm to 143nm, the central wavelength of the absorption band is red-shifted from the ultraviolet band to the near infrared band, when the thickness of the dielectric material is 91nm and 143nm, respectively, and the oblique cleavage angles are 89.5 ° and 89.6 °, respectively, the central wavelength of the absorption band is 70nm and 1100nm, respectively, and both the absorption rate of the ultraviolet-near infrared light exceeds 99.5%.
Preferably, in step 4, when single-wavelength light with a wavelength of 633nm is incident, the higher the refractive index of the optical fiber is, the thicker the thickness of the dielectric material is needed to achieve higher absorption rate, and if the refractive index of the optical fiber is close to that of the dielectric material, the absorption will be weakened; when the refractive index of the fiber is larger than the refractive index of the dielectric material, the absorption will disappear.
The invention has the following beneficial effects:
1. and (3) an all-dielectric structure. Compared with the traditional surface plasmon absorber, any consumable metal or medium except graphene does not need to be added into the structure, and the energy of ultraviolet light is completely absorbed by the graphene.
2. The structure is simple. Compared with the traditional surface plasmon absorber, the surface plasmon absorber has the advantages that complex patterns do not need to be constructed on the surface, and the process difficulty and the manufacturing cost are greatly reduced.
3. Compared with the absorber structure which is proposed before and mainly works in the range from visible light to infrared spectrum, the ultraviolet-near infrared absorber can efficiently absorb ultraviolet-near infrared light.
According to the method, any consumed medium or metal except graphene does not need to be added into the structure, complex nano-processing is not needed, the energy of ultraviolet-near infrared light is completely absorbed by the graphene, and the absorption spectrum can be adjusted by controlling parameters such as polarization, the size of a wedge angle and the thickness of a medium layer.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
In the drawings:
FIG. 1 is a schematic three-dimensional structure of the present invention;
FIG. 2(a) is a graph of the absorption rate of graphene in the present invention for three specific alumina layer thicknesses and specific oblique cleavage angles; FIG. 2(b) is a schematic cross-sectional view of the present invention;
FIG. 3 shows the absorption of incident light by graphene for different thicknesses of aluminum oxide layers;
FIG. 4 shows the absorption of incident light by graphene at 633nm single-wavelength light with different core refractive indices and alumina layer thicknesses.
In the figure: 1 is optical fiber, 2 is dielectric material, and 3 is graphene.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Examples
As shown in fig. 1, fig. 2(a), fig. 2(b), fig. 3, and fig. 4, a method for improving ultraviolet light absorptivity of graphene includes the following steps:
step 1: directly depositing a dielectric material 2 on the end face of the wedge-cleaved optical fiber 1 with a specific inclination angle, and flatly paving graphene 3 on the surface of the dielectric material 2; the optical fiber 1 is cleaved at an angle theta,
step 2: through a numerical simulation method, ultraviolet-near infrared absorption of graphene 3 is optimized, the conductivity of the graphene 3 shows a significant asymmetric peak value when the free space wavelength is 268nm, the absorption rate of the graphene 3 to light in an ultraviolet range is higher than that of a visible light wave band, and the ultraviolet absorption rate of the suspended graphene 3 is lower than 9%;
and step 3: the s-polarized light is adopted, the wedge angle of the wedge optical fiber 1 is gradually increased, an oscillation mode that incident photon energy in air is gradually coupled to the theta angle is formed, and the absorption of the graphene 3 on ultraviolet-near infrared light in a specific wavelength range is gradually improved;
and 4, step 4: when the thickness of the dielectric material 2 is increased, the central wavelength also changes linearly, because the phase change of the coherent light in the dielectric material 2 can be kept constant only when the central wavelength and the thickness of the dielectric material 2 change synchronously; while the thickness of the dielectric material 2 is increased, a high-order absorption peak appears at one end of short wave, which is generated by high-order interference absorption;
and 5: in practical application, the expected ultraviolet-near infrared light absorption is obtained by selecting a proper theta angle and the thickness of the dielectric material 2.
Further, in the step 1, the optical fiber 1 is made of silicon dioxide, the dielectric material 2 is made of aluminum oxide, and the graphene 3 is a graphene monoatomic layer.
Further, in the step 3, when the thickness of the dielectric material 2 is 35nm and the θ angle is 88.4 °, the absorption rate of the ultraviolet-near infrared light at 270nm exceeds 99.9%, when the thickness of the dielectric material 2 is increased from 35nm to 143nm, the central wavelength of the absorption band is red-shifted from the ultraviolet band to the near infrared band, when the thickness of the dielectric material 2 is 91nm and 143nm, respectively, and the oblique cleavage angles are 89.5 ° and 89.6 °, respectively, the central wavelength of the absorption band is 70nm and 1100nm, respectively, and both the absorption rate of the ultraviolet-near infrared light exceeds 99.5%.
Further, in step 4, when single-wavelength light with a wavelength of 633nm is incident, the higher the refractive index of the optical fiber 1 is, the thicker the thickness of the dielectric material 2 is needed to achieve higher absorption, and if the refractive index of the optical fiber 1 is close to that of the dielectric material 2, the absorption will be weakened; when the refractive index of the fiber 1 is larger than the refractive index of the dielectric material 2, the absorption will disappear.
Example (b): overall structure as shown in fig. 1, by studying the effect of the refractive index of the dielectric material 2 on the overall absorption, we found that full absorption is possible only when the refractive index of the optical fiber 1 is smaller than that of the dielectric material 2, and therefore common silica and alumina are used as the materials of the optical fiber 1 and the dielectric material 2, respectively. The ultraviolet-near infrared absorption of graphene 3 in the proposed structure is optimized by a numerical simulation method. Due to the singularity of saddle points of the energy band of the graphene 3, the conductivity of the graphene 3 shows a significant asymmetric peak value when the wavelength of the free space is 268nm, so that the absorption rate of the graphene 3 to light in an ultraviolet range is higher than that of a visible light waveband, but the ultraviolet absorption rate of the suspended graphene 3 is still lower than 9%, and the absorption rate of the graphene 3 to ultraviolet light still needs to be improved by a certain method. The proposed method is based on adjusting the polarization and the theta angle of light, and when s-polarized light is adopted and the theta angle is gradually increased to the proposed structure, an theta angle oscillation mode is formed, in which the energy of incident photons in air is gradually coupled into the structure, so that the absorption of ultraviolet-near infrared light in a specific wavelength range by graphene 3 is gradually improved. As shown in fig. 2(a) and 2(b), when the thickness of the alumina layer is 35nm and the angle θ is 88.4 °, the absorbance at 270nm is more than 99.9%, when the thickness of the alumina layer is increased from 35nm to 143nm, the central wavelength of the absorption band is red-shifted from the ultraviolet band to the near-infrared band, when the thickness of the alumina layer is 91nm and 143nm, respectively, and the angle θ is 89.5 ° and 89.6 °, respectively, the central wavelength of the absorption band is 70nm and 1100nm, respectively, and both absorbances are more than 99.5%. Besides, we found that the absorption is greatly affected by changing the thickness of the dielectric material 2, as shown in fig. 3, the central wavelength of the absorption peak depends on the thickness of the dielectric material 2, and when the thickness of the dielectric material 2 is increased, the central wavelength also linearly changes correspondingly, because the phase change of coherent light in the dielectric material 2 can be maintained constant only when the central wavelength and the thickness of the dielectric material 2 synchronously change, and at the same time, we found that, when the thickness of the dielectric material 2 is increased, a high-order absorption peak appears at one end of short wave due to high-order interference absorption. In addition, we find that the refractive index of the optical fiber 1 and the thickness of the dielectric material 2 have an influence on the absorption of the incident light, as shown in fig. 4, when we use single-wavelength light of 633nm, the higher the refractive index of the optical fiber 1, the thicker the thickness of the dielectric material 2 is needed to achieve higher absorption, and if the refractive index of the optical fiber 1 is close to that of the dielectric material 2, the absorption will be weakened; when the refractive index of the fiber 1 is larger than the refractive index of the dielectric material 2, the absorption will disappear. In practical applications, therefore, the appropriate angle θ, thickness of dielectric material 2, and reasonable material of optical fiber 1 can be selected to achieve the desired uv-nir absorption.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A method for improving ultraviolet light absorptivity of graphene is characterized by comprising the following steps:
step 1: directly depositing a dielectric material (2) on the end face of the wedge-cleaved optical fiber (1) with a specific inclination angle, and flatly paving graphene (3) on the surface of the dielectric material (2); the optical fiber (1) is obliquely split into an angle theta;
step 2: through a numerical simulation method, ultraviolet-near infrared absorption of the graphene (3) is optimized, the conductivity of the graphene shows a remarkable asymmetric peak value when the free space wavelength is 268nm, and the absorption rate of the suspended graphene to light in an ultraviolet range is higher than that of a visible light wave band, but the ultraviolet absorption rate of the suspended graphene is still lower than 9%;
and step 3: the s-polarized light is adopted, the wedge angle of the wedge optical fiber (1) is gradually increased, an oscillation mode that incident photon energy in air is gradually coupled to the angle theta is formed, and the absorption of the graphene (3) on ultraviolet-near infrared light in a specific wavelength range is gradually improved;
and 4, step 4: when the thickness of the dielectric material (2) is increased, the central wavelength is changed linearly correspondingly, because the phase change of coherent light in the dielectric material (2) can be kept constant only when the central wavelength and the thickness of the dielectric material (2) are changed synchronously; while the thickness of the dielectric material (2) is increased, a high-order absorption peak appears at one end of short wave, which is generated by high-order interference absorption;
and 5: in practical application, the expected ultraviolet-near infrared light absorption is obtained by selecting proper theta angles and the thickness of the dielectric material (2), wherein the theta angles are 88.4 degrees, 89.5 degrees and 89.6 degrees, and the thickness of the dielectric material (2) is 35nm, 91nm and 143 nm.
2. The method for improving the ultraviolet light absorptivity of graphene according to claim 1, wherein the material of the optical fiber (1) in the step 1 is silicon dioxide, the material of the dielectric material (2) is aluminum oxide, and the graphene (3) is a graphene monoatomic layer.
3. The method for improving the ultraviolet light absorptivity of graphene according to claim 1, wherein in step 3, when the thickness of the dielectric material (2) is 35nm and the theta angle is 88.4 °, the absorptivity of ultraviolet-near infrared light at 270nm exceeds 99.9%, when the thickness of the dielectric material (2) is increased from 35nm to 143nm, the central wavelength of the absorption band is red-shifted from the ultraviolet band to the near infrared band, when the thickness of the dielectric material (2) is 91nm and 143nm, respectively, and the oblique cleavage angles are 89.5 ° and 89.6 °, respectively, the central wavelength of the absorption band is 70nm and 1100nm, respectively, and both the absorptivity of ultraviolet-near infrared light exceed 99.5%.
4. The method for improving the ultraviolet light absorptivity of graphene according to claim 1, wherein in step 4, when single-wavelength light with a wavelength of 633nm is used for incidence, the higher the refractive index of the optical fiber (1), the thicker the thickness of the dielectric material (2) is needed to achieve higher absorptivity, and if the refractive index of the optical fiber (1) is close to that of the dielectric material (2), the absorption will be weakened; when the refractive index of the fiber (1) is larger than the refractive index of the dielectric material (2), the absorption will disappear.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104851929A (en) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | Photoelectric material adjustable absorption enhancing layer based on graphene surface plasmon |
| CN108227060A (en) * | 2018-01-26 | 2018-06-29 | 厦门大学 | A kind of method of the enhancing without nano-patterning graphene UV Absorption |
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| US8295671B2 (en) * | 2009-10-15 | 2012-10-23 | Corning Incorporated | Coated optical fibers and related apparatuses, links, and methods for providing optical attenuation |
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| CN104851929A (en) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | Photoelectric material adjustable absorption enhancing layer based on graphene surface plasmon |
| CN108227060A (en) * | 2018-01-26 | 2018-06-29 | 厦门大学 | A kind of method of the enhancing without nano-patterning graphene UV Absorption |
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