CN108691012A - Caesium lead halide perovskite crystal material and its preparation method and application of the one kind with high photoelectric respone efficiency, ambient-temp-stable - Google Patents
Caesium lead halide perovskite crystal material and its preparation method and application of the one kind with high photoelectric respone efficiency, ambient-temp-stable Download PDFInfo
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- CN108691012A CN108691012A CN201810647180.0A CN201810647180A CN108691012A CN 108691012 A CN108691012 A CN 108691012A CN 201810647180 A CN201810647180 A CN 201810647180A CN 108691012 A CN108691012 A CN 108691012A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
- C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
Abstract
The invention discloses it is a kind of have high photoelectric respone efficiency, ambient-temp-stable Ca-Ti ore type CsPbBr3-xIxCrystal with and its preparation method and application.Preparation method is:With PbBr2,PbI2, CsBr, dimethyl sulfoxide (DMSO) be raw material, wherein Pb2+And Cs+The amount ratio of substance is 2:1, Br-And I-The amount ratio of substance is 14:1~2:1, it is grown using inversion evaporative crystallization method, obtained size is big, crystalline quality is high, Br-And I-The perovskite crystal material being evenly distributed.The crystalline material is not only with good stability, but also new energy level is introduced band gap by iodide ion doping, to make the ABSORPTION EDGE of the crystal that red shift occur, has widened light abstraction width.And appropriate I2 doping reduces the dark current density of the crystal, shortens the photoresponse time, increases density of photocurrent, to improve responsiveness, verification and measurement ratio and external quantum efficiency of the crystal as photodetector when.
Description
Technical field
The invention belongs to perovskite field of photovoltaic materials, and in particular to one kind has high photoelectric respone efficiency, ambient-temp-stable
Ca-Ti ore type CsPbBr3-xIxCrystal with and its preparation method and application.
Background technology
With the development of society, non-renewable resources are increasingly reduced, energy deficiency becomes the head that human needs solve
Want problem.Solar energy has many advantages, such as cleaning, abundant, pollution-free, has been to be concerned by more and more people.In recent years, calcium titanium
Pit wood material is widely studied as a kind of new material, especially when as photovoltaic material, shows excellent performance.
Currently, the efficiency of the organic-inorganic metal halide thin-film solar cells with perovskite structure is carried from initial 3.8%
Height is to 21%.But the chemical stability of organic-inorganic metal haloid material is bad, limits its reality in photoelectric field
It applies on border.Therefore, it is necessary to find the Nomenclature Composition and Structure of Complexes stabilization, performance efficiency photoelectric material.Inorganic metal hal ide
CsPbBr3Crystal belongs to rhombic system calcium titanium structure, PnmaSpace group, the crystal stability are high.But CsPbBr3Greater band gap,
For 2.3eV, in visible light region, absorption region is relatively narrow, and photoelectric properties test in can be observed its dark current density compared with
Height affects its photoresponse rate.Another inorganic metal hal ide CsPbI3Crystal has cubic system perovskite structure(α-
CsPbI3)With rhombic system perovskite structure(δ-CsPbI3).The band gap of the two is respectively 1.73 and 2.82eV, is shown therein
α-CsPbI3Absorption region of the crystal in visible light region is wider than CsPbBr3Crystal.Moreover, α-CsPbI3The dark current of crystal is low,
Photoelectric properties are better than CsPbBr3Crystal.Have document report α-CsPbI3The electricity conversion of film can reach 10.74%.But
It is due to Cs+The radius of cation is smaller, causes tolerance factor low, cubic phase α-CsPbI3Crystal is difficult to stabilization and deposits at room temperature
.Usual cubic phase exists only in 300 DEG C or more of hot conditions, CsPbI when room temperature3Crystal is easily undergone phase transition, and influences crystalline substance
The structural stability and photoelectric properties of body.Therefore, it is contemplated by the invention that by I-Introduce the CsPbBr of ambient-temp-stable3In crystal, pass through band
Gap regulates and controls to widen the light abstraction width of crystal, the efficient Ca-Ti ore type CsPbBr of acquisition ambient-temp-stable, photoelectric respone3- xIxCrystal.
However, I-Ionic radius(0.220nm)Significantly greater than Br-Ion(0.196nm), CsPbI3Crystal itself is easily sent out again
Raw phase transformation, by I-Ion introduces CsPbBr3Crystal will influence the structural stability of new crystal, will also influence the growth of crystal
Speed and crystal quality.Therefore, how to optimize crystal structure, find suitable I-Doping concentration is to obtain ambient-temp-stable, high-quality
Measure CsPbBr3-xIxOne of critical issue of monocrystalline.In addition, Cs+,Pb2+,Br-,I-From different reagents, in growth solution
Solubility difference is larger, keeps the ion doping of high concentration difficult.It is also to obtain high quality to find suitable solvent and dissolving scheme
CsPbBr3-xIxThe key of monocrystalline.The present invention is by screening Cs similar in solubility+,Pb2+,Br-,I-Reagent, suitable solvent and
Dissolving scheme selects suitable growth temperature, optimization I-Doping concentration obtains large scale, high quality, ambient-temp-stable, photoelectricity and rings
Answer efficient CsPbBr3-xIxPerovskite crystal.
Invention content
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of steady with high photoelectric respone efficiency, room temperature
Fixed Ca-Ti ore type CsPbBr3-xIxCrystal with and its preparation method and application.Crystalline material chemical stability height, the crystalline
It measures, Br-And I-Be co-doped with uniformly, photoelectric response performance it is good.
For achieving the above object, the present invention adopts the following technical scheme that:
That the invention discloses a kind of chemical stabilities is high, crystalline quality is good, Br-And I-Be co-doped with uniformly, photoelectric response performance it is good
CsPbBr3-xIx (x=0.2-1.0) perovskite crystal material, chemical composition are respectively:CsPbBr3,CsPbBr2.8I0.2,
CsPbBr2.6I0.4And CsPbBr2I1。CsPbBr3-xIxPerovskite crystal category rhombic system,PnmaSpace group.In crystalline material,
With I-Doping concentration increases, and the band gap of crystal reduces, and increases the absorption region of light, but too high doping concentration can lead to crystalline substance
Body structural instability, chemical stability can also reduce.The present invention is based on crystal structure design and lot of experiment validation, optimize I-
Ion doping concentration(x=0.2-1.0), to obtain, dark current density is small, density of photocurrent is big, the photoresponse time is short
CsPbBr3-xIxCrystal.Photodetector based on such crystal design not only has high photoelectric respone rate, verification and measurement ratio and outer amount
Sub- efficiency, and the photoresponse time is rapid, performance is stablized.
The present invention obtains CsPbBr using the growth of inversion evaporative crystallization method3-xIxCrystal, crystal growing apparatus are as shown in Figure 1.
The reagent of crystal growth, solvent, growth temperature are to the crystalline component, the quality important that are grown.The present invention is summarizing
On a large amount of experiment basis, PbBr is selected2,PbI2It is raw material with CsBr, DMSO is crystal growth solvent, and crystal growth temperature is
It 120 DEG C, is grown by slow solvent flashing and obtains high quality CsPbBr3-xIxMonocrystalline.It is important to note that growth is molten
The amount ratio of the substance of Pb ions and Cs ions in liquidn Pb:n CsIt should be 2:1.Growing method of the present invention has technique
Simply, the advantages that repeatability is high, at low cost.The CsPbBr obtained using the present invention3-xIxCrystal has big size, crystallization height, nothing
Phase transformation, the advantages that chemical stability is good, photoelectric properties are good.
To achieve the above object, CsPbBr is obtained3-xIxCrystal, the present invention adopt the following technical scheme that:
Perovskite CsPbBr of the one kind with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe preparation method of crystalline material:With
PbBr2,PbI2, CsBr, dimethyl sulfoxide (DMSO) be raw material, wherein Pb2+And Cs+The amount ratio of substance is 2:1, Br-And I-The amount ratio of substance
It is 14:1~2:1, it is grown using inversion evaporative crystallization method, obtained size is big, crystalline quality is high, Br-And I-It is evenly distributed
Perovskite CsPbBr3I3-xCrystalline material;Wherein x=0.2-1.0.
Perovskite CsPbBr with high photoelectric respone efficiency, ambient-temp-stable as described above3-xIxThe preparation of crystalline material
Method comprises the following specific steps that:
(1)Suitable PbBr is added in beaker2And dimethyl sulfoxide (DMSO), and be sufficiently stirred and make it completely dissolved;
(2)Continue that appropriate PbI is added into beaker2, and be sufficiently stirred and make it completely dissolved;
(3)Continue that appropriate CsBr is added into beaker, is heated to 120 DEG C, constant temperature, and be sufficiently stirred and make it completely dissolved;
(4)Beaker beaker is sealed with preservative film, and in opening thin-line-shaped the top long 1cm of standardized item.Solution is placed in 120 DEG C
In oil bath pan, solvent DMSO slowly volatilizees(One week), precipitated crystal when reaching supersaturation, crystal washed, as perovskite
CsPbBr3-xIxCrystalline material.
Step(1)Middle PbBr be added2The ratio between the volume of quality and dimethyl sulfoxide (DMSO) be added be 5-9g/20mL.
Step(1)And step(2)Middle PbBr be added2And PbI2Substance amount ratio be 14:1~2:1.
Step(3)The inventory of middle CsBr is according to Pb in beaker2+And Cs+The amount ratio of substance is 2:1 is calculated.
Step(4)Gained CsPbBr3-x IxAfter crystal taking-up removing is repeatedly washed with DMSO or N,N-dimethylformamide
The solution of plane of crystal attachment.
Perovskite CsPbBr made from a kind of preparation method as described above3-xIxCrystalline material, x values are 0.2-1.0.
A kind of perovskite CsPbBr as described above3-xIxCrystalline material answering in photodetector, gamma-ray detector
With.
The beneficial effects of the present invention are:
The CsPbBr of the present invention3-xIxCrystal can be carried out big by simple for process, favorable reproducibility, inversion evaporative crystallization method at low cost
Batch is grown.In addition to this advantage, also have the advantages that following several uniquenesses:1)For CsPbBr3-xIxCrystal, iodide ion doping
New energy level is introduced into its band gap, red shift occurs for the ABSORPTION EDGE to regulate and control crystal, has widened the absorption region of crystal.2)Appropriate iodine
Doping can reduce CsPbBr3-xIxThe dark current density of crystal increases density of photocurrent, accelerates the photoresponse time.3)On a small quantity
I-Crystal lattices can be stable in the presence of, CsPbBr can't be changed3Perovskite structure, CsPbBr3-xIxCrystal chemistry is stablized
Property it is high.4)The CsPbBr that the present invention obtains3-xIxCrystal may be used as photodetector, not only have high photoelectric respone rate, inspection
Survey rate and external quantum efficiency, photoresponse time are rapid, and stability is high.
Description of the drawings
Fig. 1 is CsPbBr in embodiment 1-43-xIxThe grower schematic diagram of crystal;
Fig. 2 is CsPbBr in embodiment 1-43-xIxThe photo of crystal;A is CsPbBr3The photo of crystal;B is CsPbBr2.8I0.2
The photo of crystal;C is CsPbBr2.6I0.4The photo of crystal;D is CsPbBr2I1The photo of crystal;
Fig. 3 is CsPbBr in case study on implementation 1-33-xIxThe X-ray powder diffraction figure of crystal;
Fig. 4 is CsPbBr in embodiment 22.8I0.2The X-ray powder diffraction figure of crystal, and place 3 months after X-ray powder
Last diffraction pattern;
Fig. 5 is CsPbBr in embodiment 1-43-xIxThe brightness current-voltage of crystal photodetector(I-V)Curve graph;
Fig. 6 is CsPbBr in embodiment 22.8I0.2The photoelectric respone rate of crystal photodetector and the relational graph of standing time.
Specific implementation mode
Further to disclose rather than the present invention is limited, the present invention is described in further detail below in conjunction with example.
The present invention can be embodied as follows:
Suitable PbBr is sequentially added in beaker2,DMSO,PbI2, CsBr, be heated to 120 DEG C and be sufficiently stirred make its completely it is molten
Solution, obtains clear pale yellow color solution, the total volume of solvent DMSO be added and the volume ratio V of beakerDMSO/VBeakerFor 20mL/
50mL, the PbBr being added2Quality and solvent DMSO be added volume ratiom PbBr2:VDMSOFor 5-9g/20mL, it is added
PbBr2,PbI2, CsBr substances amount ration Pb2+:n Cs+It is 2:1, the PbBr being added2And PbI2Middle Br-:I-Substance amount ration Br-:n I-It is 14:1~2:1.Beaker is sealed with preservative film, and in opening thin-line-shaped the top long 1cm of standardized item.Solution is placed in
In 120 DEG C of oil bath pans, solvent DMSO slowly volatilizees, and CsPbBr is precipitated when reaching degree of supersaturation after a week3-xIxCrystal takes out brilliant
Body removes the solution of plane of crystal attachment with more washings of DMSO or DMF.
Crystalline material is assembled into photodetector, is tested using Tianjin moral still Modulight/IVIUN types optical electro-chemistry
System is in 50.0mV s-1Its I-V curve is tested under sweep speed, voltage range is -10.0 ~ 10.0V.
For the more detailed description present invention, different Br are as follows-:I-The CsPbBr of ratio3-xIxCrystal it is specific
Embodiment.
Embodiment 1
Take 10.276g PbBr2It is placed in stirring in 50mL beakers to make it completely dissolved, 2.982g CsBr is then added, are warming up to
120 DEG C, stirring is to being completely dissolved.Beaker is sealed with preservative film, and standardized item grows the thin-line-shaped openings of 1 cm.Solution is placed in
In 120 DEG C of oil bath pans, solvent slowly volatilizees, and CsPbBr is precipitated when reaching degree of supersaturation3Crystal.Crystal is taken out, it is quick with DMF
Washing removes the solution of plane of crystal attachment after repeatedly washing.
In the photo of obtained crystal such as Fig. 2 shown in a.A shows CsPbBr in Fig. 23Crystal is transparent, and crystalline quality is high, and
Size is big, and size is 5.10 × 4.91 × 1.43mm3.It is surveyed using Rigaku Mini Flex II type X-ray powder diffractions
The crystalline phase of the prepared product of examination analysis, as a result such as Fig. 3.By CsPbBr3It is prepared known to the X-ray powder diffraction figure of crystal
Orthogonal CsPbBr3Crystal.System is tested to CsPbBr using Tianjin moral still Modulight/IVIUN types optical electro-chemistry3Crystal makes
At detector carry out I-V curve test, light radiation wavelength 523nm, optical power density 9.8W/m2, the results are shown in Figure 5.
Under identical voltage, CsPbBr3The dark current density of photodetector is higher, is unfavorable for the detection for high-energy photon, in addition light
Electro-detection efficiency also can be relatively low.Although density of photocurrent is higher, since dark current density is higher, photoresponse rate is bad.
Embodiment 2
Take 9.248g PbBr2It is placed in stirring in 50mL beakers to make it completely dissolved, 1.290g PbI is then added2Stirring makes it
It is completely dissolved, is eventually adding 2.982g CsBr, be warming up to 120 DEG C, stirring is to being completely dissolved.Beaker is sealed with preservative film, and is drawn
Opening thin-line-shaped one long 1cm.Solution is placed in 120 DEG C of oil bath pans, solvent slowly volatilizees, and is precipitated when reaching degree of supersaturation
CsPbBr2.8I0.2Crystal.Crystal is taken out, with DMF quick wash, the solution of plane of crystal attachment is removed after repeatedly washing.
In the photo of obtained crystal such as Fig. 2 shown in b.B shows CsPbBr in Fig. 22.8I0.2Crystal is transparent, crystalline quality
Height, and size is big, size is 5.60 × 4.60 × 1.56mm3.Spread out using Rigaku Mini Flex II type x-ray powders
The crystalline phase of product prepared by test analysis is penetrated, as a result such as Fig. 3.CsPbBr2.8I0.2The X-ray powder diffraction figure and orthorhombic phase of crystal
CsPbBr3Compared to there are no other crystalline phase diffraction maximums, it is known that prepared orthogonal CsPbBr2.8I0.2Crystal.Using Tianjin moral
Still Modulight/IVIUN types optical electro-chemistry tests system to CsPbBr2.8I0.2The detector that crystal is fabricated to carries out I-V curve
Test, light radiation wavelength 523nm, optical power density 9.8W/m2, the results are shown in Figure 5.Under identical voltage, CsPbBr2.8I0.2
The dark current density of photodetector is less than CsPbBr3;And in most of voltage range, CsPbBr2.8I0.2Photodetector
Density of photocurrent be higher than CsPbBr3。
At ambient temperature, by CsPbBr2.8I0.2Crystal is placed three months in the air atmosphere that humidity is 55%.Using
CsPbBr is tested in the test of Rigaku Mini Flex II type x-ray powder diffraction instruments again2.8I0.2The crystalline phase of crystal, as a result such as
Fig. 4.Significant change does not occur for the XRD spectrums of crystal, does not occur dephasign, it is known that CsPbBr2.8I0.2Crystal has chemical steady well
It is qualitative.During placement, certain interval of time is i.e. using Tianjin moral still Modulight/IVIUN types optical electro-chemistry test system
Unified test tries CsPbBr2.8I0.2The I-V curve of photodetector, light radiation wavelength 523nm, optical power density 9.8W/m2, calculate it
Photoresponse rate, as a result such as Fig. 6.It places three months, CsPbBr2.8I0.2The photoresponse rate of photodetector is still very stable.
Embodiment 3
Take 8.236g PbBr2It is placed in 50 mL beakers to stir and make it completely dissolved, 2.5816g PbI are then added2Stirring makes
It is completely dissolved, and 2.982g CsBr are then added, are warming up to 120 DEG C, and stirring is to being completely dissolved.Beaker is sealed with preservative film,
And in the opening thin-line-shaped long 1cm of standardized item.Solution is placed in 120 DEG C of oil bath pans, solvent slowly volatilizees, and reaches degree of supersaturation
When CsPbBr is precipitated2.6I0.4Crystal.It takes out crystal and removes plane of crystal after repeatedly washing with dimethyl sulfoxide (DMSO) quick wash
The solution of attachment.
In the photo of obtained crystal such as Fig. 2 shown in c.C shows CsPbBr in Fig. 22.6I0.4Crystal is relatively transparent, crystalline
Amount is high, and size is big, and size is 3.70 × 3.40 × 2.00mm3.Using Rigaku Mini Flex II type x-ray powders
The crystalline phase of product prepared by diffraction test analysis, as a result such as Fig. 3.CsPbBr2.6I0.4The X-ray powder diffraction figure of crystal with it is orthogonal
Phase CsPbBr3Compared to there are no other crystalline phase diffraction maximums, it is known that prepared the CsPbBr of orthorhombic phase2.6I0.4Crystal.Using
Moral still Modulight/IVIUN types optical electro-chemistry in Tianjin tests system to CsPbBr2.6I0.4The detector that crystal is fabricated to carries out
I-V curve is tested, light radiation wavelength 523nm, optical power density 9.8W/m2, the results are shown in Figure 5.Under identical voltage,
CsPbBr2.6I0.4The dark current density of photodetector is less than CsPbBr3;CsPbBr2.6I0.4The photoelectric current of photodetector is close
Degree is less than CsPbBr3。
Embodiment 4
Take 5.148g PbBr2It is placed in 50 mL beakers to stir and make it completely dissolved, 6.454g PbI are then added2Stirring makes it
It is completely dissolved, 2.982g CsBr is then added, are warming up to 120 DEG C, stirring is to being completely dissolved.Beaker is sealed with preservative film, and in
Standardized item grows the thin-line-shaped openings of 1 cm.Solution is placed in 120 DEG C of oil bath pans, solvent slowly volatilizees, when reaching degree of supersaturation
CsPbBr is precipitated2I1Crystal.Crystal is taken out, with dimethyl sulfoxide (DMSO) quick wash, plane of crystal attachment is removed after repeatedly washing
Solution.
In the photo of obtained crystal such as Fig. 2 shown in d.D shows CsPbBr in Fig. 22I1Crystal color is red, crystalline
Amount is high, and size is big, and size is 3.48 × 3.18 × 1.74mm3.Using Rigaku Mini Flex II type x-ray powders
The crystalline phase of product prepared by diffraction test analysis, as a result such as Fig. 3.CsPbBr2I1The X-ray powder diffraction figure and orthorhombic phase of crystal
CsPbBr3Compared to there are no other crystalline phase diffraction maximums, it is known that prepared orthogonal CsPbBr2I1Crystal.Still using Tianjin moral
Modulight/IVIUN type optical electro-chemistry tests system to CsPbBr2I1The detector that crystal is fabricated to carries out I-V curve test,
Light radiation wavelength 523nm, optical power density 9.8W/m2, the results are shown in Figure 5.Under identical voltage, CsPbBr2I1Photodetection
The dark current density of device is less than CsPbBr3, and it is higher than CsPbBr2.8I0.2;CsPbBr2I1The density of photocurrent of photodetector is low
In CsPbBr3。
The foregoing is merely the preferable case study on implementation of the present invention, all equivalent changes done according to scope of the present invention patent
With modification, it should all belong to the covering scope of the present invention.
Claims (8)
1. perovskite CsPbBr of the one kind with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe preparation method of crystalline material, it is special
Sign is:With PbBr2,PbI2, CsBr, dimethyl sulfoxide (DMSO) be raw material, wherein Pb2+And Cs+The amount ratio of substance is 2:1, Br-And I-
The amount ratio of substance is 14:1~2:1, it is grown using inversion evaporative crystallization method, obtained size is big, crystalline quality is high, Br-And I-
The perovskite CsPbBr being evenly distributed3I3-xCrystalline material, wherein x=0.2-1.0.
2. the perovskite CsPbBr according to claim 1 with high photoelectric respone efficiency, ambient-temp-stable3-xIxCrystalline material
Preparation method, it is characterised in that:It is as follows:
(1)Suitable PbBr is added in beaker2And dimethyl sulfoxide (DMSO), and be sufficiently stirred and make it completely dissolved;
(2)Continue that appropriate PbI is added into beaker2, and be sufficiently stirred and make it completely dissolved;
(3)Continue that appropriate CsBr is added into beaker, is heated to 120 DEG C, constant temperature, and be sufficiently stirred and make it completely dissolved;
(4)Beaker is continued to be placed under 120 DEG C of constant temperature, so that solvent is slowly volatilized, is precipitated crystal when reaching supersaturation, it will
Crystal washs, as perovskite CsPbBr3-xIxCrystalline material.
3. the perovskite CsPbBr according to claim 2 with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe system of crystal
Preparation Method, it is characterised in that:Step(1)Middle PbBr be added2The ratio between quality and the volume of dimethyl sulfoxide (DMSO) be added be
5-9g/20mL。
4. the perovskite CsPbBr according to claim 2 with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe system of crystal
Preparation Method, it is characterised in that:Step(1)And step(2)Middle PbBr be added2And PbI2Substance amount ratio be 14:1~2:1.
5. the perovskite CsPbBr according to claim 2 with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe system of crystal
Preparation Method, it is characterised in that:Step(3)The inventory of middle CsBr is according to Pb in beaker2+And Cs+The amount ratio of substance is 2:1 into
What row calculated.
6. the perovskite CsPbBr according to claim 2 with high photoelectric respone efficiency, ambient-temp-stable3-xIxThe system of crystal
Preparation Method, it is characterised in that:Step(4)Gained CsPbBr3-x IxCrystal is more with DMSO or N,N-dimethylformamide after taking out
Secondary washing removes the solution of plane of crystal attachment.
7. perovskite CsPbBr made from a kind of preparation method as claimed in any one of claims 1 to 63-xIxCrystalline material, it is special
Sign is:x=0.2-1.0.
8. a kind of perovskite CsPbBr as claimed in claim 73-xIxCrystalline material is in photodetector, gamma-ray detector
Application.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016646A (en) * | 2019-03-25 | 2019-07-16 | 华中科技大学 | A kind of preparation method of the lead base halogen perovskite film for high-energy ray detection |
| CN110277142A (en) * | 2019-06-03 | 2019-09-24 | 仰恩大学 | A kind of calculation method calculating ABO3 perovskite rock-steady structure and performance |
| CN113823740A (en) * | 2021-08-05 | 2021-12-21 | 中国科学院深圳先进技术研究院 | Perovskite-based X-ray detector with n-i structure and preparation method thereof |
| CN114836817A (en) * | 2022-05-30 | 2022-08-02 | 陕西师范大学 | All-inorganic CsPbBr 3-x I x Single crystal and method for producing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106938854A (en) * | 2017-03-14 | 2017-07-11 | 电子科技大学 | A kind of preparation method of large scale lead halide caesium perovskite crystal |
| US20170260218A1 (en) * | 2016-03-10 | 2017-09-14 | Samsung Electronics Co., Ltd. | Nanocrystal and preparation method thereof |
| CN107338044A (en) * | 2017-07-03 | 2017-11-10 | 苏州虹霞晶体科技有限公司 | The technique that a kind of reversal temperature method prepares perovskite structure luminescent material |
| CN107611191A (en) * | 2017-08-24 | 2018-01-19 | 宁波大学 | A kind of inorganic perovskite solar cell and preparation method thereof |
| CN108083325A (en) * | 2017-11-24 | 2018-05-29 | 宁波工程学院 | A kind of CsPbBr3It is nanocrystalline and based on microwave method synthesis different dimensions CsPbBr3Nanocrystalline method |
-
2018
- 2018-06-22 CN CN201810647180.0A patent/CN108691012A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170260218A1 (en) * | 2016-03-10 | 2017-09-14 | Samsung Electronics Co., Ltd. | Nanocrystal and preparation method thereof |
| CN106938854A (en) * | 2017-03-14 | 2017-07-11 | 电子科技大学 | A kind of preparation method of large scale lead halide caesium perovskite crystal |
| CN107338044A (en) * | 2017-07-03 | 2017-11-10 | 苏州虹霞晶体科技有限公司 | The technique that a kind of reversal temperature method prepares perovskite structure luminescent material |
| CN107611191A (en) * | 2017-08-24 | 2018-01-19 | 宁波大学 | A kind of inorganic perovskite solar cell and preparation method thereof |
| CN108083325A (en) * | 2017-11-24 | 2018-05-29 | 宁波工程学院 | A kind of CsPbBr3It is nanocrystalline and based on microwave method synthesis different dimensions CsPbBr3Nanocrystalline method |
Non-Patent Citations (1)
| Title |
|---|
| LAHOUCINE ATOURKI，ET AL.: "Impact of iodide substitution on the physical properties and stability of cesium lead halide perovskite thinfilms CsPbBr3-xIx(0≤x≤1)", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016646A (en) * | 2019-03-25 | 2019-07-16 | 华中科技大学 | A kind of preparation method of the lead base halogen perovskite film for high-energy ray detection |
| CN110016646B (en) * | 2019-03-25 | 2020-06-02 | 华中科技大学 | Preparation method of lead-based halogen perovskite film for high-energy ray detection |
| CN110277142A (en) * | 2019-06-03 | 2019-09-24 | 仰恩大学 | A kind of calculation method calculating ABO3 perovskite rock-steady structure and performance |
| CN110277142B (en) * | 2019-06-03 | 2023-05-05 | 仰恩大学 | Computing method for computing stable structure and performance of ABO3 perovskite |
| CN113823740A (en) * | 2021-08-05 | 2021-12-21 | 中国科学院深圳先进技术研究院 | Perovskite-based X-ray detector with n-i structure and preparation method thereof |
| CN114836817A (en) * | 2022-05-30 | 2022-08-02 | 陕西师范大学 | All-inorganic CsPbBr 3-x I x Single crystal and method for producing the same |
| CN114836817B (en) * | 2022-05-30 | 2024-02-27 | 陕西师范大学 | All-inorganic CsPbBr 3-x I x Single crystal and method for producing same |
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