CN108690397A - Photoelectricity ink and its preparation method and application method - Google Patents
Photoelectricity ink and its preparation method and application method Download PDFInfo
- Publication number
- CN108690397A CN108690397A CN201710224435.8A CN201710224435A CN108690397A CN 108690397 A CN108690397 A CN 108690397A CN 201710224435 A CN201710224435 A CN 201710224435A CN 108690397 A CN108690397 A CN 108690397A
- Authority
- CN
- China
- Prior art keywords
- photoelectricity
- ink
- solvent
- photoelectric
- supercritical fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/54—Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids
Abstract
The invention discloses a kind of photoelectricity ink, including photoelectric material and using supercritical fluid as the solvent of material.The invention also discloses the preparation method of above-mentioned photoelectricity ink and its printed electronic field application process.Photoelectricity ink according to the present invention is using supercritical fluid as solvent, so that it is in use, can simply gaseous state be voluntarily changed by supercritical fluid state and volatilized completely by means of the dual variation of pressure change or pressure and temperature, solvent employed in compared with the existing technology, it ensure that finally formed photoelectric functional layer noon dissolvent residual, improve the degree of purification of photoelectric functional layer, the adverse effect that remaining solvent brings photoelectric properties is avoided, the raising of printed electronic device performance is conducive to.At the same time, the solvent in photoelectricity ink according to the present invention is preferably the substance of the pollution-free green such as supercritical carbon dioxide, supercritical water, also avoid volatilizing in use caused by environmental pollution the problems such as.
Description
Technical field
The invention belongs to printed electronics field, it relates in particular to a kind of photoelectricity ink and preparation method thereof and answer
Use method.
Background technology
Printed electronic is using the new electronic manufacturing technology of traditional printing methods manufacture electronic device, and manufacturing process is special
The environmentally protective feature such as some low temperature and increasing material forms sharp contrast with microelectronic manufacture course of products, is integrated after silicon substrate
Electronic manufacturing technology revolution again after circuit manufacturing technology.Currently, printed electronic has caused electronics manufacturing in the industry
Extensive concern, and answered in numerous areas such as solar cell, display, illumination, health medical treatment, wearable electronics
With.
The ink of critical process, that is, electronic material prepared by electronic device is realized using the manufacturing process of printing.Print light
Difference lies in photoelectricity inks to be accomplished that photoelectric functional with traditional sense ink maximum for electric ink, therefore it is required that photoelectricity ink exists
Preparing moderate purity, the higher the better, i.e., reduces the use of solvent unrelated with photoelectric properties as possible;Meanwhile the curing process process after print
It is middle that temperature is required to be maintained at 80 DEG C hereinafter, especially in the printing OLED and QLED display technology application given priority at present;This
Outside, the enhancing of environmental protection consciousness also requires to be avoided in photoelectricity ink using volatile organic solvents such as containing alcohol, ketone and petroleum ethers.
Invention content
To solve the above-mentioned problems of the prior art, the present invention provides a kind of photoelectricity ink and preparation method thereof and answer
With method, which can be volatilized completely in use using supercritical fluid as solvent, to improve printing
The degree of purification of the photoelectric functional layer of acquisition, is conducive to the raising of printed electronic device performance.
In order to reach foregoing invention purpose, present invention employs the following technical solutions:
A kind of photoelectricity ink, using supercritical fluid as solvent.
Further, the solvent is supercritical carbon dioxide or supercritical water.
Further, the viscosity of the photoelectricity ink is 2cP~1000cP.
Further, the viscosity of the photoelectricity ink is 10cP~20cP.
Further, the photoelectric material includes the organic material with photoelectric characteristic or the polymer with photoelectric characteristic
Material.
Further, the photoelectric material is selected from 9,9'-(2,2'Dimethyl-[1,1'Lian Ben ]-4,4'Base) two (9H-
Carbazole):Ir (bt) 2 (acac), poly- 3,4- ethene dioxythiophenes/poly styrene sulfonate, nano silver, PTB7:Th/[6,6]Benzene
Any one in base-C61- methyl butyrates, cyano polypara-phenylene vinylene, graphene, carbon nanotube.
Another object of the present invention is to provide the preparation methods of a kind of as above any photoelectricity ink, including:
Obtain supercritical fluid solvent;
The supercritical fluid solvent is mixed with photoelectric material in closed container, the photoelectricity ink is obtained.
Another object of the present invention also resides in the application process for providing a kind of as above any photoelectricity ink, will be described
Photoelectricity ink printed forms ink droplet, the cured formation photoelectric functional layer of ink droplet on substrate.
Further, curing includes air pressure adjustment or air pressure and temperature while adjusting.
Further, using aerosol inkjet printing methods or piezoelectricity jet printing method by the photoelectricity ink printed described
On substrate.
Further, it is sub- to be selected from polyethylene terephthalate, polyethylene naphthalate, polyamides for the substrate
Any one in amine, silicon chip, glass, indium oxide tin glass and stainless steel substrates.
Beneficial effects of the present invention:
(1) present invention uses supercritical fluid as solvent, by mixed electrical optical material, to obtain photoelectricity ink;When
When using the photoelectricity ink, supercritical fluid volatilization completely in gaseous form in solidification in the ink droplet formed through printing,
Remaining photoelectric material forms the functional layer with photoelectric characteristic.With photoelectricity ink in the prior art and its application process phase
Than photoelectricity ink according to the present invention can realize complete volatilization during printing use, to improve photoelectric functional layer
Degree of purification avoids the adverse effect that remaining solvent brings photoelectric properties, is conducive to carrying for printed electronic device performance
It is high;
(2) present invention is using supercritical fluid as solvent, in use, typically merely by air pressure adjustment or air pressure with
The dual adjustment of temperature can be realized it and gasify and volatilize, and complete solidification, simple for process quick;
(3) supercritical fluid of the present invention preferably uses pollution-free, green supercritical carbon dioxide or surpasses and faces
Boundary's water so in the curing process only volatilizes carbon dioxide or vapor;With alcohol, ketone, petroleum ether etc. in compared with prior art
Photoelectricity ink of the organic reagent as solvent, not can cause environmental pollution.
Specific implementation mode
Hereinafter, detailed description of the present invention embodiment in future.However, it is possible to implement this hair in many different forms
It is bright, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, provide these embodiments be for
Explanation the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention's is various
Embodiment and the various modifications for being suitable for specific intended application.
Embodiment 1
Present embodiments provide a kind of photoelectricity ink, including photoelectric material and using supercritical fluid as the solvent of material.
In the present embodiment, photoelectric material 9,9'-(2,2'Dimethyl-[1,1'Lian Ben ]-4,4'Base) two (9H- clicks
Azoles):(doping concentration of wherein Ir (bt) 2 (acac) is 10%, 9,9&apos to Ir (bt) 2 (acac);-(2,2'Dimethyl-[1,1'-
Lian Ben ]-4,4'Base) two (9H- carbazoles) abbreviation CDBP);Supercritical fluid is preferably supercritical carbon dioxide.
The photoelectricity ink of the present embodiment is in the preparation, it is only necessary to using the supercritical fluid of acquisition as solvent and and photoelectricity
Material Stirring is uniformly mixed.
Usually, supercritical fluid can be used connected purifier and be prepared with condensation/high-voltage device, and now-making-now-using is
It can;Then warm to be transported to the mixing that is in contact with photoelectric material after carrying out voltage stabilizing by pressure-regulating valve, that is, obtain photoelectricity
Ink.
In the present embodiment, first by CO2Purified device removes moisture removal and other impurity;It then will be by purified treatment
CO2It is passed through in condensation/high-voltage device, is 7.5MPa~15MPa controlled at 10 DEG C~31 DEG C, pressure, makes CO2Reach overcritical
Fluid state obtains supercritical carbon dioxide;Most afterwards after pressure-regulating valve voltage stabilizing, the warm pipeline fortune of the supercritical carbon dioxide
Send and be stored in the CDBP in usable material chamber:Ir (bt) 2 (acac) Stirring in mixer, forms uniformly mixed photoelectricity
Ink.
The viscosity for the above-mentioned photoelectricity ink that the present embodiment obtains is 2cP~1000cP, a concentration of 3mg/mL~20mg/mL.
Photoelectricity ink provided in this embodiment can be applied to printed electronic field, and photoelectric functional is prepared by printing type
Layer.
Usually, the Preparation equipment of printing device and above-mentioned photoelectricity ink is used in conjunction by another pressure-regulating valve, and root
The suitable printing device of the parameter selections such as viscosity of photoelectricity ink according to preparation.
Specifically, ink droplet, the ink will be formed by printing device at the photoelectricity ink printed to the target area of substrate
Supercritical fluid in drop voluntarily volatilizees under the dual variation of pressure change or temperature and pressure completely, photoelectricity material therein
Material is then formed by curing high-purity photoelectric functional layer;Excellent photoelectric characteristic is presented because of noresidue solvent in the photoelectric functional layer,
It is particularly suitable for typographical display technical field.
In view of the viscosity for the photoelectricity ink that the present embodiment obtains, aerosol printer is selected to carry out aerosol inkjet printing,
It is 20psi~30psi that fog stream is sent in setting, and circling gas flow is 40psi~50psi, by photoelectricity ink injection to ito glass substrate
On, form ink droplet.It is super in ink droplet due to the 0.1Mpa of 7.5MPa~15MPa rapid drawdowns when pressure is by preparing to air environment
Critical carbon dioxide reverts to gaseous state volatilization by supercritical fluid state, and 0.2 μm~1 μ m-thick is only left on ito glass substrate
CDBP:Ir (bt) 2 (acac) film forms photoelectric functional layer.
Embodiment 2
In the description of embodiment 2, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 2 difference from example 1 is that, in the photoelectricity ink of embodiment 2, photoelectric material is specially poly-
3,4- ethene dioxythiophenes/poly styrene sulfonate (abbreviation PEDOT:PSS), (i.e. photoelectric material accounts for photoelectricity ink to solid content
The mass percent of water) it is 1%~1.5%.
Correspondingly, in the photoelectricity ink for preparing the present embodiment, corresponding storage PEDOT in usable material chamber:PSS, and with via
Thermo-insulating pipe line is conveyed through the supercritical carbon dioxide come Stirring in mixer, forms uniformly mixed photoelectricity ink.
When using photoelectricity ink provided in this embodiment, first to PET substrate (Polyethylene
Terephthalate, polyethylene terephthalate) it is heat-treated, so that it is kept for 40 DEG C~50 DEG C;When photoelectricity ink sprays
When being mapped on the hotter PET substrate, due to 7.5MPa~15MPa rapid drawdowns when pressure is by preparing to air environment
0.1Mpa while 10 DEG C~31 DEG C when temperature is by preparing are increased to 40 DEG C~50 DEG C, the supercritical carbon dioxide in ink droplet by
Supercritical fluid state reverts to gaseous state volatilization, and the PEDOT of 0.2 μm~1 μ m-thick is only left on PET substrate:PSS films form sheet resistance
For the photoelectric functional layer of 80 Ω/~300 Ω/.
Embodiment 3
In the description of embodiment 3, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 3 difference from example 1 is that, in the photoelectricity ink of embodiment 3, using supercritical water as solvent,
Photoelectric material is specially the nano-Ag particles that grain size is 30nm~150nm, and (i.e. photoelectric material accounts for the photoelectricity ink to solid content
Mass percent) it is 10%~30%.
Correspondingly, in the photoelectricity ink for preparing the present embodiment, raw material H first2The purified device removal of impurities of O obtains resistivity
For the ultra-pure water of 18M Ω cm;Then ultra-pure water is passed through in condensation/high-voltage device, controlled at 375 DEG C~400 DEG C, pressure
For 22.5MPa~30MPa, make H2O reaches supercritical fluid state, obtains supercritical water;It, should most afterwards after pressure-regulating valve voltage stabilizing
The warm pipeline transport of supercritical water and the grain size being stored in usable material chamber are the nano-Ag particles of 30nm~150nm in mixer
Interior Stirring forms uniformly mixed photoelectricity ink.
When using photoelectricity ink provided in this embodiment, silicon chip substrate is heat-treated first, it is made to be kept for 100 DEG C
~150 DEG C;When in photoelectricity ink injection to the silicon chip substrate, extremely due to 22.5MPa~30MPa rapid drawdowns when pressure is by preparing
375 DEG C~400 DEG C when the 0.1Mpa while temperature of air environment are by preparing are reduced to 100 DEG C~150 DEG C, super in ink droplet
Critical reverts to gaseous state volatilization by supercritical fluid state, only leaves nano-Ag particles in silicon chip substrate, and 100 DEG C~150
It is heat-treated 30min~60min at DEG C, forms 0.2 μm~1 μ m-thick, the photoelectric functional layer that sheet resistance is 0.2 Ω/~20 Ω/.
Embodiment 4
In the description of embodiment 4, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 4 difference from example 1 is that, photoelectric material be methylamine lead iodine (CH3NH3PbI3), remaining reference
Described in embodiment 1, a kind of photoelectricity ink of a concentration of 0.8mol/L~1.3mol/L is provided.
Correspondingly, in the photoelectricity ink for preparing the present embodiment, corresponding storage CH in usable material chamber3NH3PbI3, and with via
Thermo-insulating pipe line is conveyed through the supercritical carbon dioxide come Stirring in mixer, forms uniformly mixed photoelectricity ink.
When using photoelectricity ink provided in this embodiment, by photoelectricity ink injection to ito glass substrate, ink is formed
Drop.Due to the 0.1Mpa of 7.5MPa~15MPa rapid drawdowns when pressure is by preparing to air environment, the overcritical titanium dioxide in ink droplet
Carbon is converted into gaseous state volatilization by supercritical fluid state, and the CH of 0.2 μm~1 μ m-thick is only left on ito glass substrate3NH3PbI3Film,
Photoelectric functional layer is formed, and the photoelectric functional layer can be used for constituting the active layer in perovskite thin film photovoltaic device.
Embodiment 5
In the description of embodiment 5, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 5 difference from example 1 is that, photoelectric material is by Poly[4,8-bis(5-(2-ethylhexyl)
thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-
3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)](abbreviation PTB7:Th [) is mixed;6,
6]Phenyl-C61- methyl butyrate (s [6,6]- phenyl-C61-butyric acid methyl ester, abbreviation PCBM) structure
At mixed proportion PTB7:The ratio between amount of substance of Th and PCBM is 1:1.5, which is PTB7:Th/PCBM;Remaining
With reference to described in embodiment 1, a kind of photoelectricity ink of a concentration of 15mg/mL~25mg/mL is provided.
When using photoelectricity ink provided in this embodiment, substrate selects flexible transparent conducting film.It is eventually formed in flexibility
The cured PTB7 for forming 0.2 μm~1 μ m-thick of ink droplet on transparent conductive film substrate:Th/PCBM films form photoelectric functional
Layer, and the photoelectric functional layer can be used for constituting the active layer in organic photovoltaic solar cell device.
It is worth noting that first, when preparing photoelectricity ink, it is not necessarily to the mixing ratio of especially control photoelectric material and solvent
Example, it is only necessary to which the parameters such as pre-prepared thickness, size of photoelectric functional layer specifically adjust when according to its use;Second,
In the various embodiments described above, the viscosity of the photoelectricity ink obtained controls in the range of 2cP~1000cP, not controlled accurately
System, therefore the mode of corresponding selection aerosol inkjet printing is printed, if but the viscosity of the photoelectricity ink is accurately controlled in
In the range of 10cP~20cP, while by adjusting the pressure-regulating valve being connected with printing device, you can selection piezo jet India side
Method is printed, and photoelectricity ink according to the present invention is not limited to a certain fixed printing type in use.
Photoelectricity ink according to the present invention selects supercritical fluid as solvent, so that it is in use, it can be simple
Gaseous state is voluntarily changed by supercritical fluid state and is volatilized completely by means of the dual variation of pressure change or pressure and temperature,
Solvent employed in compared with the existing technology ensure that finally formed photoelectric functional layer noon dissolvent residual, improve light
The degree of purification of electric functional layer avoids the adverse effect that remaining solvent brings photoelectric properties, is conducive to printed electronic device
The raising of part performance.At the same time, the solvent in photoelectricity ink according to the present invention be preferably supercritical carbon dioxide, it is overcritical
The substance for green that water etc. is pollution-free, also avoid volatilizing in use caused by environmental pollution the problems such as.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that:
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (11)
1. a kind of photoelectricity ink, using supercritical fluid as solvent.
2. photoelectricity ink according to claim 1, which is characterized in that the solvent is supercritical carbon dioxide or overcritical
Water.
3. photoelectricity ink according to claim 1 or 2, which is characterized in that the viscosity of the photoelectricity ink be 2cP~
1000cP。
4. photoelectricity ink according to claim 1 or 2, which is characterized in that the viscosity of the photoelectricity ink be 10cP~
20cP。
5. photoelectricity ink according to claim 1 or 2, which is characterized in that the photoelectric material includes having photoelectric characteristic
Organic material or polymer material with photoelectric characteristic.
6. photoelectricity ink according to claim 5, which is characterized in that the photoelectric material is selected from 9,9'-(2,2'Diformazan
Base-[1,1'Lian Ben ]-4,4'Base) two (9H- carbazoles):Ir (bt) 2 (acac), poly- 3,4- ethene dioxythiophenes/polystyrene
Sulfonate, nano silver, PTB7:Th/[6,6]Phenyl-C61- methyl butyrates, cyano polypara-phenylene vinylene, graphene, carbon are received
Any one in mitron.
7. a kind of preparation method of photoelectricity ink as described in claim 1-6 is any, which is characterized in that including:
Obtain supercritical fluid solvent;
The supercritical fluid solvent is mixed with photoelectric material in closed container, the photoelectricity ink is obtained.
8. a kind of application process of photoelectricity ink as described in claim 1-6 is any, which is characterized in that by the photoelectricity ink
Printing forms ink droplet, the cured formation photoelectric functional layer of ink droplet on substrate.
9. application process according to claim 8, which is characterized in that curing includes air pressure adjustment or air pressure and temperature
It spends while adjusting.
10. application process according to claim 8, which is characterized in that use aerosol inkjet printing methods or piezo jet
Impression method by the photoelectricity ink printed over the substrate.
11. application process according to claim 8, which is characterized in that the substrate is selected from polyethylene terephthalate
Any one in ester, polyethylene naphthalate, polyimides, silicon chip, glass, indium oxide tin glass and stainless steel substrates.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710224435.8A CN108690397A (en) | 2017-04-07 | 2017-04-07 | Photoelectricity ink and its preparation method and application method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710224435.8A CN108690397A (en) | 2017-04-07 | 2017-04-07 | Photoelectricity ink and its preparation method and application method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108690397A true CN108690397A (en) | 2018-10-23 |
Family
ID=63842180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710224435.8A Pending CN108690397A (en) | 2017-04-07 | 2017-04-07 | Photoelectricity ink and its preparation method and application method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108690397A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004185952A (en) * | 2002-12-03 | 2004-07-02 | Ricoh Co Ltd | Manufacturing method of conductive material and ink composition containing conductive material |
US20040129344A1 (en) * | 2002-11-06 | 2004-07-08 | Hitoshi Arita | Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device |
CN1525999A (en) * | 2001-07-12 | 2004-09-01 | ��˹���´﹫˾ | A compressed fluid formulation |
CN1809462A (en) * | 2003-06-24 | 2006-07-26 | 伊斯曼柯达公司 | An article having multiple spectral deposits |
-
2017
- 2017-04-07 CN CN201710224435.8A patent/CN108690397A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1525999A (en) * | 2001-07-12 | 2004-09-01 | ��˹���´﹫˾ | A compressed fluid formulation |
US20040129344A1 (en) * | 2002-11-06 | 2004-07-08 | Hitoshi Arita | Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device |
JP2004185952A (en) * | 2002-12-03 | 2004-07-02 | Ricoh Co Ltd | Manufacturing method of conductive material and ink composition containing conductive material |
CN1809462A (en) * | 2003-06-24 | 2006-07-26 | 伊斯曼柯达公司 | An article having multiple spectral deposits |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Scheideler et al. | Low‐temperature‐processed printed metal oxide transistors based on pure aqueous inks | |
Zhu et al. | Printable semiconductors for backplane TFTs of flexible OLED displays | |
Li et al. | All inkjet-printed metal-oxide thin-film transistor array with good stability and uniformity using surface-energy patterns | |
Glynn et al. | Solution processable metal oxide thin film deposition and material growth for electronic and photonic devices | |
Kim et al. | Inkjet-printed zinc tin oxide thin-film transistor | |
Li et al. | Polyfluorinated electrolyte for fully printed carbon nanotube electronics | |
Li et al. | Coffee-ring defined short channels for inkjet-printed metal oxide thin-film transistors | |
Shao et al. | Recent progress on jet printing of oxide-based thin film transistors | |
CN103947002B (en) | It is incorporated with the transparent conductor of additive and the manufacture method of correlation | |
CN108032641B (en) | Method for preparing large-area patterned organic light-emitting film by printing | |
KR101849446B1 (en) | Copper and/or copper oxide dispersion, and electroconductive film formed using dispersion | |
CN103069555B (en) | Organic semiconductor thin-film and the manufacture method of organic semiconductor monocrystal thin film | |
JP4730623B2 (en) | THIN FILM TRANSISTOR, METHOD FOR PRODUCING THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE | |
WO2011026550A1 (en) | Solution processable passivation layers for organic electronic devices | |
Huang et al. | A universal roll‐to‐roll slot‐die coating approach towards high‐efficiency organic photovoltaics | |
Singh et al. | Polymer solar cells: an overview | |
Kim et al. | Tailoring opto-electrical properties of ultra-thin indium tin oxide films via filament doping: Application as a transparent cathode for indoor organic photovoltaics | |
JP2015029020A (en) | Liquid solution for organic semiconductor layer formation, organic semiconductor layer, and organic thin film transistor | |
Arias et al. | All‐additive ink‐jet‐printed display backplanes: materials development and integration | |
Li et al. | Inkjet-printed oxide thin-film transistors based on nanopore-free aqueous-processed dielectric for active-matrix quantum-dot light-emitting diode displays | |
Huang et al. | Dip-coating of poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate) anodes for efficient polymer solar cells | |
CN108987283A (en) | A kind of gallium tin oxide semiconductor thin film transistor (TFT) and its preparation method and application | |
Xing et al. | Inkjet printed polystyrene sulfuric acid-doped poly (3, 4-ethylenedioxythiophene)(PEDOT) uniform thickness films in confined grooves through decreasing the surface tension of PEDOT inks | |
CN109651882B (en) | Hole injection layer ink for ink-jet printing and application thereof in organic light-emitting display | |
Chai et al. | Solution-processed organic field-effect transistors using directed assembled carbon nanotubes and 2, 7-dioctyl [1] benzothieno [3, 2-b][1] benzothiophene (C8-BTBT) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181023 |
|
RJ01 | Rejection of invention patent application after publication |