CN108677029A - A kind of integrated circuit High Purity Gold rule particle preparation method - Google Patents
A kind of integrated circuit High Purity Gold rule particle preparation method Download PDFInfo
- Publication number
- CN108677029A CN108677029A CN201810264365.3A CN201810264365A CN108677029A CN 108677029 A CN108677029 A CN 108677029A CN 201810264365 A CN201810264365 A CN 201810264365A CN 108677029 A CN108677029 A CN 108677029A
- Authority
- CN
- China
- Prior art keywords
- gold
- purity
- integrated circuit
- raw material
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010931 gold Substances 0.000 title claims abstract description 91
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 87
- 239000002245 particle Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 34
- 230000008020 evaporation Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005266 casting Methods 0.000 claims abstract description 13
- 238000000746 purification Methods 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000005096 rolling process Methods 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 15
- 239000000047 product Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 238000003723 Smelting Methods 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 150000002500 ions Chemical group 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 235000010265 sodium sulphite Nutrition 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 229910004042 HAuCl4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 230000015271 coagulation Effects 0.000 claims description 3
- 238000005345 coagulation Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 239000000706 filtrate Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002372 labelling Methods 0.000 claims description 3
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 3
- 239000008188 pellet Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 239000013589 supplement Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 229910052787 antimony Inorganic materials 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 229910052745 lead Inorganic materials 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 238000005453 pelletization Methods 0.000 abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 abstract description 3
- 238000005491 wire drawing Methods 0.000 abstract description 3
- 238000005868 electrolysis reaction Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- -1 and purity is high Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B11/00—Obtaining noble metals
- C22B11/04—Obtaining noble metals by wet processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F2009/0804—Dispersion in or on liquid, other than with sieves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Electrolytic Production Of Metals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention discloses a kind of integrated circuit High Purity Gold rule particle preparation methods, it proposes to be different from traditional melting, the technique that ingot casting, rolling, wire drawing, pelletizing technique pollute high-purity gold evaporation material strips in preparation process, completely newly prepares the new method of the high-purity gold evaporation rule particle of integrated circuit.Concrete technology is to carry out primary purification using electrolysis, removes most of metal and nonmetallic inclusion in 4N gold, secondary purification is carried out by chemical method again, High Purity Gold material purity is more than 99.999% or more, and can effectively control specific impurities Elements C, N, O, S, Fe, Pb, Sb, Bi etc. cast straight forming by controllable accurate and produce high-purity gold evaporation rule particle.Product purity proposed by the present invention reaches 99.999% or more, and C content is less than 1ppm;0.3 3mm of product cut size, error ± 0.2mm, weight error ± 0.1g, spatter property reach 1 grade of standard of electronics industry.
Description
Technical field
The present invention relates to integrated circuit High Purity Gold feedstock purification and with prepare High Purity Gold rule particle method, the conjunction
Golden material is mainly used as the electrode material of manufacture IC chip.
Background technology
High Purity Gold has contact resistance low and stablize, and electric conductivity and thermal conductivity are good, easily bonding, easily form film and with half
The characteristics such as conductor matrix adhesion is good, are the important structural evaporation coating film materials in integrated circuit device.With extensive
Integrated circuit just develops towards high speed, small size, thin space direction, puts forward higher requirements, to the quality of gold evaporation material
99.999% or more golden purity is sought, the geometry and size to gold evaporation material also have special requirement, just adapt to integrate
The high speed development of circuit industry.Integrated circuit is mainly monopolized by Ji Jia international corporations with high-purity gold evaporation material, including Zhuan Xinwan
Rich, Honeywell, Umicore, he Li Shi etc..The shadow of material performance, processing technology etc. during by gold evaporation material preparation
It rings, China cannot still prepare integrated circuit industry with high-purity gold evaporation material in batches at present.China's integrated circuit is steamed with High Purity Gold
Hair material relies primarily on import, expensive, seriously restricts the development of China's IC industry.
Currently, the production of high-purity gold evaporation material is related to raw material preparation, melting, ingot casting, rolling, wire drawing, pelletizing (according to visitor
Family require) etc. all too many levels, either will for the control of links spatter property in the purity of raw material or process
Ask high.High-end integrated circuit is more than 99.999% or more with high-purity gold evaporation material requirements gold purity, and can effectively control spy
To determine impurity element C, Fe, Pb, Sb, Bi etc., and ensures raw material cleanliness factor, no organic pollution, gas nonmetalloid content is low,
Geometry and size also have special requirement pair simultaneously, just adapt to the high speed development of integrated circuit industry.Due to working as previous existence
Production. art flow is longer, contacts various process equipments, and product is highly prone to pollute, and the limitation of technological process itself determines production
The quality of product is difficult to have further promotion.
Invention content
The purpose of the present invention proposes completely newly to prepare the new method of the high-purity gold evaporation rule particle of integrated circuit.This method has
Body technology is to carry out primary purification using electrolysis, removes most of metal and nonmetallic inclusion in 4N gold, then pass through chemical method
Secondary purification is carried out, High Purity Gold material purity is more than 99.999% or more, and can effectively control specific impurities Elements C, N, O, S,
Then Fe, Pb, Sb, Bi etc. cast straight forming by controllable accurate and produce integrated circuit with high-purity gold evaporation rule particle.
High Purity Gold rule particle proposed by the present invention, product purity reach 99.999% or more, and C content is less than 1ppm;Production
Product grain size 0.3-3mm, error ± 0.2mm, weight error ± 0.1g, spatter property reach 1 grade of standard of electronics industry.
The present invention proposes one kind and using electrorefining-chemical purification-controllable accurate casting and forming, prepares integrated circuit
With the new method of High Purity Gold rule particle.Grain size 0.3-3mm rule particles are prepared with this method, and purity reaches 99.999%, miscellaneous
Matter content≤10ppm, C content≤1ppm.This method prepares High Purity Gold rule particle, and purity is high, and impurity content is low, in the same size
Property it is good, production efficiency is high, and spatter property is good, can be used as the evaporation material for manufacturing IC chip.
Innovative point of the present invention is:High Purity Gold raw material is prepared using electrorefining-chemical purification technology.It effectively controls specific
Impurity element C, N, O, S, Fe, Pb, Sb, Bi etc..
Innovative point of the present invention also resides in:High Purity Gold rule particle is prepared using controllable accurate cast molding technology, is shortened
Technique short route does not introduce impurity, and spatter property is good, improves the quality of high-purity gold evaporation material.Be different from completely traditional melting,
Ingot casting, rolling, wire drawing, pelletizing technique pollute high-purity gold evaporation material strips in preparation process.
High Purity Gold rule particle evaporation material preparation method of the present invention is as follows:
1, golden raw material:Au purity >=99.99%.
2, chemical purification:
(1) raw material ingot is then rolled into the thin slice of thickness≤0.5mm, is cut into the gold plaque of length and width≤100mm;
(2) stock is put into 5L beakers, each beaker fills gold 1-3kg, and hydrochloric acid is added, then adds nitric acid.Rate of charge
Example is hydrochloric acid (ml):Nitric acid (ml):Golden (g)=2:0.5:2;
(3) it is 80V~120V, heated solution, until gold all dissolvings to adjust pressure regulator voltage;
(4) pressure regulator voltage is set to 200~205V, heating makes gold solution be concentrated into gold content 800g/L~1000g/
L。
(5) hydrochloric acid is added, until solution is emerged without yellow gas;
(6) solution cooled to room temperature, it is 80g/L~100g/L that first water, which is added, and is diluted to gold content;
(7) quantitative filter paper filtering solution is used;
(8) sodium sulfite (g) is pressed:Golden (g)=1.2~2.0:1 sodium sulfite is added into filtrate;
(9) it is heated with heater, temperature is controlled at 80 DEG C~100 DEG C, keeps 20h~25h;
(10) after restoring, gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, if
Constant temperature degree 150-200 degree keeps the temperature natural cooling after 15-20h.
3, electrorefining:
(1) primary purification raw material is smelting, rolling processing factory Jinyang pole plate, every piece of anode plate weight 1000-3000g, sun
Plate dimensions are:It is wide:120mm~150mm, length:250mm~300mm;
(2) it after using high pure raw material to prepare the HAuCl4 solution that 3-6 rises 1000g/L, adds 5-8 and rises 3000g/L's
NaCl solution mixes, and is added after distilled water is diluted to 20-50L and is put into electrolytic cell;
(3) each electrolytic cell puts into 4 pieces of Jinyang pole plates, and Jinyang pole plate is hooked on gold in stud, gold anode connect anode,
Cathode titanium plates connect cathode, are placed on electrolytic cell, and distance is 70 ± 5mm between anode and cathode;
(4) electrolyzer temperature is set as 50-70 degree, is cut off the power after keeping 20-24h;
(5) it is dispensed to beaker after taking out cathode gold, secondary ion water is used to clean to Ph values as 6.5-7.5;
(6) gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, set temperature
150-200 degree keeps the temperature natural cooling after 15-20h.
4, controllable accurate casting and forming:Using intermediate frequency (IF) smelting equipment, high-purity sea is added after assembling high purity aluminium oxide crucible
Continuous gold raw material is warming up to 1100-1200 degree, and gold is continuously added raw material supplement after being molten into liquid, and every batch of ingot casting feeds 2000 grams,
With being taken out after stove natural cooling, using chloroazotic acid corrosion surface 10-20S, dried after being cleaned with secondary deionized water;By fritting ingot casting
It is packed into high purity aluminium oxide bottom and leaks crucible, so that golden melt is leak into secondary ion sink coagulation forming after being warming up to 1250 degree, melting is complete
High-purity gold particle is taken out at rear.
5, purged and packed:AuSn15-25% alloying pellets are carried out in ultrasonic cleaner to clean and dry, examine with acetone
It after testing qualified weighing products, is sealed in polybag, is reloaded into can or plastic casing with sealing machine, Product labelling is sent out on note
Goods.
Description of the drawings
Fig. 1 and Fig. 2 is integrated circuit High Purity Gold rule particle product and high-purity cake of gold.
Specific implementation mode
1 integrated circuit of embodiment is prepared with High Purity Gold ¢ 1mm rule particle products;
1, golden raw material:Au purity >=99.99%.
2, chemical purification:
(1) raw material ingot is then rolled into the thin slice of thickness≤0.5mm, is cut into the gold plaque of length and width≤100mm;
(2) stock is put into 5L beakers, each beaker fills gold 1-3kg, and hydrochloric acid is added, then adds nitric acid.Rate of charge
Example is hydrochloric acid (ml):Nitric acid (ml):Golden (g)=2:0.5:2;
(3) it is 80V~120V, heated solution, until gold all dissolvings to adjust pressure regulator voltage;
(4) pressure regulator voltage is set to 200~205V, heating makes gold solution be concentrated into gold content 800g/L~1000g/
L。
(5) hydrochloric acid is added, until solution is emerged without yellow gas;
(6) solution cooled to room temperature, it is 80g/L~100g/L that first water, which is added, and is diluted to gold content;
(7) quantitative filter paper filtering solution is used;
(8) sodium sulfite (g) is pressed:Golden (g)=1.2~2.0:1 sodium sulfite is added into filtrate;
(9) it is heated with heater, temperature is controlled at 80 DEG C~100 DEG C, keeps 20h~25h;
(10) after restoring, gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, if
Constant temperature degree 150-200 degree keeps the temperature natural cooling after 15-20h.
3, electrorefining:
(1) primary purification raw material is smelting, rolling processing factory Jinyang pole plate, every piece of anode plate weight 1000-3000g, sun
Plate dimensions are:It is wide:120mm~150mm, length:250mm~300mm;
(2) it after using high pure raw material to prepare the HAuCl4 solution that 3-6 rises 1000g/L, adds 5-8 and rises 3000g/L's
NaCl solution mixes, and is added after distilled water is diluted to 20-50L and is put into electrolytic cell;
(3) each electrolytic cell puts into 4 pieces of Jinyang pole plates, and Jinyang pole plate is hooked on gold in stud, gold anode connect anode,
Cathode titanium plates connect cathode, are placed on electrolytic cell, and distance is 70 ± 5mm between anode and cathode;
(4) electrolyzer temperature is set as 50-70 degree, is cut off the power after keeping 20-24h;
(5) it is dispensed to beaker after taking out cathode gold, secondary ion water is used to clean to Ph values as 6.5-7.5;
(6) gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, set temperature
150-200 degree keeps the temperature natural cooling after 15-20h.
4, controllable accurate casting and forming:Using intermediate frequency (IF) smelting equipment, high-purity sea is added after assembling high purity aluminium oxide crucible
Continuous gold raw material is warming up to 1100-1200 degree, and gold is continuously added raw material supplement after being molten into liquid, and every batch of ingot casting feeds 2000 grams,
With being taken out after stove natural cooling, using chloroazotic acid corrosion surface 10-20S, dried after being cleaned with secondary deionized water;By fritting ingot casting
It is packed into high purity aluminium oxide bottom and leaks crucible, so that golden melt is leak into secondary ion sink coagulation forming after being warming up to 1250 degree, melting is complete
High-purity gold particle is taken out at rear.
5, purged and packed:AuSn15-25% alloying pellets are carried out in ultrasonic cleaner to clean and dry, examine with acetone
It after testing qualified weighing products, is sealed in polybag, is reloaded into can or plastic casing with sealing machine, Product labelling is sent out on note
Goods.Raw material and product are shown in Fig. 1.
Claims (4)
1. a kind of high-purity gold evaporation rule particle of integrated circuit, it is characterised in that:In the High Purity Gold component content, the purity of Au
>=99.999%, impurity content≤10ppm, C content≤1ppm;Product cut size 0.3-3mm, error ± 0.2mm, weight error ±
0.1g, spatter property reach 1 grade of standard of electronics industry.
2. a kind of high-purity gold evaporation rule particle preparation method of integrated circuit, it is characterised in that contain following processing step:
1), golden raw material:Au purity >=99.99%;
2), chemical purification:
(1) raw material ingot is then rolled into the thin slice of thickness≤0.5mm, is cut into the gold plaque of length and width≤100mm;
(2) stock is put into 5L beakers, each beaker fills gold 1-3kg, and hydrochloric acid is added, then adds nitric acid.Ingredient proportion is
Hydrochloric acid (ml):Nitric acid (ml):Golden (g)=2:0.5:2;
(3) it is 80V~120V, heated solution, until gold all dissolvings to adjust pressure regulator voltage;
(4) pressure regulator voltage is set to 200~205V, heating makes gold solution be concentrated into gold content 800g/L~1000g/L;
(5) hydrochloric acid is added, until solution is emerged without yellow gas;
(6) solution cooled to room temperature, it is 80g/L~100g/L that first water, which is added, and is diluted to gold content;
(7) quantitative filter paper filtering solution is used;
(8) sodium sulfite (g) is pressed:Golden (g)=1.2~2.0:1 sodium sulfite is added into filtrate;
(9) it is heated with heater, temperature is controlled at 80 DEG C~100 DEG C, keeps 20h~25h;
(10) after restoring, gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, setting temperature
150-200 degree is spent, natural cooling after 15-20h is kept the temperature,
3), electrorefining:
(1) primary purification raw material is smelting, rolling processing factory Jinyang pole plate, every piece of anode plate weight 1000-3000g, anode plate
Size is:It is wide:120mm~150mm, length:250mm~300mm;
(2) after using high pure raw material to prepare the HAuCl4 solution that 3-6 rises 1000g/L, the NaCl for adding 5-8 liters 3000g/L is molten
Liquid mixes, and is added after distilled water is diluted to 20-50L and is put into electrolytic cell;
(3) each electrolytic cell puts into 4 pieces of Jinyang pole plates, and Jinyang pole plate is hooked on gold in stud, and gold anode connects anode, cathode
Titanium plate connects cathode, is placed on electrolytic cell, and distance is 70 ± 5mm between anode and cathode;
(4) electrolyzer temperature is set as 50-70 degree, is cut off the power after keeping 20-24h;
(5) it is dispensed to beaker after taking out cathode gold, secondary ion water is used to clean to Ph values as 6.5-7.5;
(6) gold is taken out to evaporating dish, each evaporating dish fills gold 1-4kg, and capping is placed in electric dry oven, set temperature 150-
200 degree, natural cooling after 15-20h is kept the temperature,
4), controllable accurate casting and forming:Using intermediate frequency (IF) smelting equipment, high-purity cake of gold is added after assembling high purity aluminium oxide crucible
Raw material is warming up to 1100-1200 degree, and gold is continuously added raw material supplement after being molten into liquid, and every batch of ingot casting feeds 2000 grams, with stove
It takes out after natural cooling, using chloroazotic acid corrosion surface 10-20S, is dried after being cleaned with secondary deionized water;Fritting ingot casting is packed into
Crucible is leaked at high purity aluminium oxide bottom, so that golden melt is leak into secondary ion sink coagulation forming after being warming up to 1250 degree, after the completion of melting
Take out high-purity gold particle;
5), purged and packed:AuSn15-25% alloying pellets are carried out in ultrasonic cleaner to clean and dry, examine with acetone
It after qualified weighing products, is sealed in polybag, is reloaded into can or plastic casing with sealing machine, Product labelling is sent out on note
Goods.
3. the integrated circuit according to claim 2 preparation method of high-purity gold evaporation rule particle, it is characterised in that:Institute
Raw material used in step (3) is stated to be prepared by step (1), (2) chemistry-electrolytic method.
4. integrated circuit described in claim 1 is applied to the evaporation material of IC chip with high-purity gold evaporation rule particle
Material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810264365.3A CN108677029B (en) | 2018-03-28 | 2018-03-28 | Preparation method of high-purity gold regular particles for integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810264365.3A CN108677029B (en) | 2018-03-28 | 2018-03-28 | Preparation method of high-purity gold regular particles for integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108677029A true CN108677029A (en) | 2018-10-19 |
CN108677029B CN108677029B (en) | 2020-07-07 |
Family
ID=63800589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810264365.3A Active CN108677029B (en) | 2018-03-28 | 2018-03-28 | Preparation method of high-purity gold regular particles for integrated circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108677029B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110280780A (en) * | 2019-07-28 | 2019-09-27 | 长春黄金研究院烟台贵金属材料研究所有限公司 | A kind of nano gold sol preparation method based on molten gold |
CN110842158A (en) * | 2019-11-12 | 2020-02-28 | 珠海格力绿色再生资源有限公司 | Smelting and casting method of sponge gold and application thereof |
CN110863215A (en) * | 2019-12-27 | 2020-03-06 | 有研亿金新材料有限公司 | Method for preparing gold electrolyte by using gold electrolysis anode mud |
CN115090884A (en) * | 2022-06-08 | 2022-09-23 | 江西兆驰半导体有限公司 | Preparation method of platinum particles |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101508016A (en) * | 2009-03-13 | 2009-08-19 | 贵研铂业股份有限公司 | New preparation method of intermediate alloy for bonding gold wire |
CN104404569A (en) * | 2014-11-04 | 2015-03-11 | 常州钇金环保科技有限公司 | Preparation technology of high purity gold |
CN104789794A (en) * | 2015-04-01 | 2015-07-22 | 山东招金金银精炼有限公司 | Refinement technology of high-purity gold |
-
2018
- 2018-03-28 CN CN201810264365.3A patent/CN108677029B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101508016A (en) * | 2009-03-13 | 2009-08-19 | 贵研铂业股份有限公司 | New preparation method of intermediate alloy for bonding gold wire |
CN104404569A (en) * | 2014-11-04 | 2015-03-11 | 常州钇金环保科技有限公司 | Preparation technology of high purity gold |
CN104789794A (en) * | 2015-04-01 | 2015-07-22 | 山东招金金银精炼有限公司 | Refinement technology of high-purity gold |
Non-Patent Citations (1)
Title |
---|
国家国防科技工业局: "民转军技术", 《中国军转民》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110280780A (en) * | 2019-07-28 | 2019-09-27 | 长春黄金研究院烟台贵金属材料研究所有限公司 | A kind of nano gold sol preparation method based on molten gold |
CN110842158A (en) * | 2019-11-12 | 2020-02-28 | 珠海格力绿色再生资源有限公司 | Smelting and casting method of sponge gold and application thereof |
CN110863215A (en) * | 2019-12-27 | 2020-03-06 | 有研亿金新材料有限公司 | Method for preparing gold electrolyte by using gold electrolysis anode mud |
CN115090884A (en) * | 2022-06-08 | 2022-09-23 | 江西兆驰半导体有限公司 | Preparation method of platinum particles |
Also Published As
Publication number | Publication date |
---|---|
CN108677029B (en) | 2020-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108677029A (en) | A kind of integrated circuit High Purity Gold rule particle preparation method | |
EP3196334B1 (en) | Ag alloy sputtering target and ag alloy film manufacturing method | |
CN101280430A (en) | Preparation of hyperpure copper | |
US20140199203A1 (en) | High-purity lanthanum, method for producing same, sputtering target comprising high-purity lanthanum, and metal gate film comprising high-purity lanthanum as main component | |
CN107974695A (en) | A kind of method of once electrolytic method production superelevation fine copper | |
CN109777968A (en) | A kind of preparation method of used in electronic industry High Purity Gold | |
CN106591892A (en) | Preparing method for titanium sub-oxide series soluble electrode and application of titanium sub-oxide series soluble electrode to electrolysis preparing of high-purity titanium | |
CN107557585B (en) | A kind of method of gold-tin alloy separation | |
Kuznetsova et al. | Voltammetric study of electroreduction of silicon complexes in a chloride-fluoride melt | |
CN103740954B (en) | Production method of In -containing 99.999 percent-grade indium | |
CN102121123B (en) | Vanadium metal smelting process | |
CN114959356A (en) | Novel high-resistivity low-temperature-drift copper-based precision resistance alloy and preparation method thereof | |
CN100396408C (en) | Production technology of high purity granular silver | |
CN101775650A (en) | Preparation method of solar polycrystalline silicon cast ingot and device thereof | |
CN101748307B (en) | Gold-arsenic alloy material and preparation method thereof | |
EP3279366B1 (en) | Cu-ga alloy sputtering target and method of manufacturing cu-ga alloy sputtering target | |
CN102351403B (en) | Method for preparing ultrafine glass powder used for solar battery slurry | |
CN114293227A (en) | Processing technology of high-purity copper product for aerospace | |
TW500816B (en) | Method for preparation of target material for spattering | |
KR20160077633A (en) | Method for manufacturing a thermoelectric element electrode using nickel electroplating | |
Gee et al. | Refining of gallium using gallium beta-alumina | |
CN106695163A (en) | Au-base slicken solder and preparation method thereof | |
CN109319744A (en) | A kind of preparation method of 4N tellurium | |
CN113322394B (en) | High-performance bonded platinum alloy fine material for packaging and preparation method thereof | |
CN102392297A (en) | Zinc electrolyzing and recycling device and processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 988, Keji Road, high tech Development Zone, Wuhua District, Kunming, Yunnan 650000 (Kunming Precious Metals Research Institute) Patentee after: Yunnan Precious Metal New Materials Holding Group Co.,Ltd. Country or region after: China Address before: No. 988, Keji Road, high tech Development Zone, Wuhua District, Kunming, Yunnan 650000 (Kunming Precious Metals Research Institute) Patentee before: Sino-Platinum Metals Co.,Ltd. Country or region before: China |