CN108675357A - A kind of preparation method and applications of inorganic hole transporter ferrous disulfide - Google Patents

A kind of preparation method and applications of inorganic hole transporter ferrous disulfide Download PDF

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Publication number
CN108675357A
CN108675357A CN201810685147.7A CN201810685147A CN108675357A CN 108675357 A CN108675357 A CN 108675357A CN 201810685147 A CN201810685147 A CN 201810685147A CN 108675357 A CN108675357 A CN 108675357A
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fes
solar cell
preparation
nano particle
mol
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李亚峰
毛海娟
魏明灯
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Fuzhou University
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Fuzhou University
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00Compounds of iron
    • C01G49/12Sulfides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/30Three-dimensional structures
    • C01P2002/34Three-dimensional structures perovskite-type (ABO3)
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Compounds Of Iron (AREA)

Abstract

The invention discloses a kind of preparation method and applications of inorganic hole transporter ferrous disulfide, by the Fe of 0.2 mol2O3After being mixed with 0.4 mol sulphur powders, is calcined 2 hours in 400 600 DEG C of argon gas and obtain FeS2Nano particle, FeS obtained2Nano particle is applied to as hole mobile material in titanium ore solar cell.The present invention provides one-step synthesis FeS for the first time2Hole mobile material of the nano particle as perovskite solar cell, can be so that perovskite solar cell obtains 0.8 volt of open-circuit voltage, and highest photoelectric conversion efficiency is 2.94%;This method prices of raw materials are cheap to be easy to get, and synthesis step is simple, there is good business application development prospect.

Description

A kind of preparation method and applications of inorganic hole transporter ferrous disulfide
Technical field
The invention belongs to optoelectronic materials technologies, and in particular to a kind of system of inorganic hole transporter ferrous disulfide Preparation Method and its application.
Background technology
Perovskite solar cell (PSCs) is fast-growth with its transfer efficiency, cell making process is simple, battery hair The advantages that electric at low cost and architecture-integral potentiality, battery performance surmount rapidly dye-sensitized solar cells (DSSCs) and Bulk heterojunction solar cell (BSCs), and very likely approach and surmount silica-based solar cell performance and leading following Solar cell market.But material is toxic, material is unstable and battery life is short due to preparing, and large-scale commercial is limited.Gu The introducing of state organic cavity transmission layer material such as spiro-OMeTAD molecules, greatly improve the stability of PSCs, efficiency and Service life;Effective solution liquid electrolyte is unstable, difficult encapsulation and the problem of be difficult to large area production.But spiro-OMeTAD The molecule synthesis period is long, low yield, it is of high cost the shortcomings of limit the industrialization of the PSCs based on such molecule, and with the material Photoelectric conversion efficiency PCE for the PSCs of hole transmission layer basically reaches the upper limit.Therefore, design synthesis can be used as hole transport material The new material of material, and be applied to PSCs, is expected to further increase the efficiency of battery and service life, optimizes battery structure, reduce at This, and realize large area production and industrialization;There is important scientific meaning for solving energy shortage and environmental problem.From mesh From the point of view of preceding result of study, new inorganic material is relatively fewer as the report of the hole transmission layer of perovskite solar cell.
Invention content
It is an object of the invention in view of the shortcomings of the prior art, providing a kind of inorganic hole transporter ferrous disulfide Preparation method and applications.
To achieve the above object, the present invention adopts the following technical scheme that:
A kind of inorganic hole transporter FeS2Preparation method, using one-step calcination method, by 0.2 mol grain sizes be 30nm or The Fe of 10nm2O3After being mixed with 0.4 mol sulphur powders, is calcined 2 hours in 400-600 DEG C of argon gas and obtain FeS2Nano particle.
Inorganic hole transporter FeS made from preparation method as described above2For in perovskite solar cell, with TiO2As the electron transport material of perovskite solar cell, hybrid inorganic-organic CH3NH3PbI3For light absorbent, FeS2Make For hole mobile material, Au is to assemble perovskite solar cell to electrode.
The beneficial effects of the present invention are:Inorganic hole-transporting layer material FeS2Simple with materials synthesis, purity is high, and Has the characteristics that relatively high solar cell open-circuit voltage, to extend hole layer material in perovskite solar cell Range of choice.The present invention provides one-step synthesis FeS for the first time2Hole transport of the nano particle as perovskite solar cell Material can make perovskite solar cell obtain 0.8 volt of open-circuit voltage, obtain 2.94% photoelectric conversion efficiency.The party The method prices of raw materials are cheap to be easy to get, and synthesis step is simple, there is good business application development prospect.
Description of the drawings
Fig. 1 is FeS produced by the present invention2XRD diagram;
Fig. 2 is FeS produced by the present invention2SEM figure;
Fig. 3 is based on FeS2The photoelectric properties figure of the perovskite solar cell of hole transmission layer.
Specific implementation mode
Below in conjunction with specific embodiment, the present invention will be further described, but the present invention is not limited only to these embodiments.
Embodiment 1
A kind of inorganic hole transporter FeS2Preparation method, by the Fe of 0.2 mol2O3(30nm)It is mixed with 0.4 mol sulphur powders Afterwards, it is calcined 2 hours in 500 DEG C of argon gas and obtains FeS2Nano particle.
Embodiment 2
A kind of inorganic hole transporter FeS2Preparation method, by the Fe of 0.2 mol2O3(30nm)It is mixed with 0.4 mol sulphur powders Afterwards, it is calcined 2 hours in 400 DEG C of argon gas and obtains FeS2Nano particle.
Embodiment 3
A kind of inorganic hole transporter FeS2Preparation method, by the Fe of 0.2 mol2O3(30nm)It is mixed with 0.4 mol sulphur powders Afterwards, it is calcined 2 hours in 600 DEG C of argon gas and obtains FeS2Nano particle.
Embodiment 4
A kind of inorganic hole transporter FeS2Preparation method, by the Fe of 0.2 mol2O3(10nm)It is mixed with 0.4 mol sulphur powders Afterwards, it is calcined 2 hours in 500 DEG C of argon gas and obtains FeS2Nano particle.
By taking embodiment 1 as an example, Fig. 1 FeS2XRD diagram, diffraction maximum matches preferably with standard card PDF#42-1340, Illustrate that the sample of one-step synthesis method is the FeS of pure phase2;Fig. 2 is FeS2The scanning electron microscope (SEM) photograph of hole transmission layer, it can be seen that FeS2The size of nano particle is about 30 nm, is uniformly paved with entire film layer.
With FeS obtained2Nano particle is as hole mobile material, TiO2As electron transport material, organic and inorganic is miscellaneous Change CH3NH3PbI3For light absorbent, Au is to assemble perovskite solar cell, and test its photoelectric properties, as a result such as to electrode Shown in Fig. 3.As seen from Figure 3, in 100mW/cm2Light intensity, under the conditions of AM1.5, be based on FeS2As hole mobile material Perovskite solar cell obtains 0.8 volt of open-circuit voltage, and highest photoelectric conversion efficiency is up to 2.94%.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with Modification should all belong to the covering scope of the present invention.

Claims (4)

1. a kind of inorganic hole transporter FeS2Preparation method, using one-step calcination method, it is characterised in that:By 0.2 mol's Fe2O3After being mixed with 0.4 mol sulphur powders, is calcined 2 hours in 400-600 DEG C of argon gas and obtain FeS2Nano particle.
2. inorganic hole transporter FeS according to claim 12Preparation method, it is characterised in that:The Fe2O3's Grain size is 30nm or 10nm.
3. inorganic hole transporter FeS made from a kind of preparation method as described in claim 12In perovskite solar energy Application in battery.
4. application according to claim 3, it is characterised in that:With TiO2Electron-transport as perovskite solar cell Material, hybrid inorganic-organic CH3NH3PbI3For light absorbent, FeS2As hole mobile material, Au is to assemble calcium to electrode Titanium ore solar cell.
CN201810685147.7A 2018-06-28 2018-06-28 A kind of preparation method and applications of inorganic hole transporter ferrous disulfide Pending CN108675357A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110078130A (en) * 2019-05-19 2019-08-02 东北电力大学 A kind of preparation method of hollow structure Fe-base compound and its application as super capacitor anode material
CN111710781A (en) * 2020-06-28 2020-09-25 武汉工程大学 Perovskite photovoltaic cell and preparation method thereof
CN112802971A (en) * 2020-12-31 2021-05-14 湖南鼎一致远科技发展有限公司 Electroluminescent device of PVC (polyvinyl chloride) base material and screen printing preparation method
CN112802972A (en) * 2020-12-31 2021-05-14 湖南鼎一致远科技发展有限公司 Electroluminescent device of polycarbonate substrate and preparation method
CN113908859A (en) * 2021-11-14 2022-01-11 福州大学 Mesoporous iron disulfide catalyst and preparation method and application thereof
CN115893502A (en) * 2022-11-08 2023-04-04 河南大学 Ferrous disulfide copper nanocrystalline and preparation method and application thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107098398A (en) * 2017-04-27 2017-08-29 电子科技大学 A kind of FeS2The preparation method of nano wire

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107098398A (en) * 2017-04-27 2017-08-29 电子科技大学 A kind of FeS2The preparation method of nano wire

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ARON J. HUCKABA ET AL.: ""Exceedingly Cheap Perovskite Solar Cells Using Iron Pyrite Hole Transport Materials"", 《 CHEMISTRY SELECT》 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110078130A (en) * 2019-05-19 2019-08-02 东北电力大学 A kind of preparation method of hollow structure Fe-base compound and its application as super capacitor anode material
CN110078130B (en) * 2019-05-19 2021-11-26 东北电力大学 Preparation method of hollow-structure iron-based compound and application of hollow-structure iron-based compound as cathode material of supercapacitor
CN111710781A (en) * 2020-06-28 2020-09-25 武汉工程大学 Perovskite photovoltaic cell and preparation method thereof
CN111710781B (en) * 2020-06-28 2022-07-19 武汉工程大学 Perovskite photovoltaic cell and preparation method thereof
CN112802971A (en) * 2020-12-31 2021-05-14 湖南鼎一致远科技发展有限公司 Electroluminescent device of PVC (polyvinyl chloride) base material and screen printing preparation method
CN112802972A (en) * 2020-12-31 2021-05-14 湖南鼎一致远科技发展有限公司 Electroluminescent device of polycarbonate substrate and preparation method
CN113908859A (en) * 2021-11-14 2022-01-11 福州大学 Mesoporous iron disulfide catalyst and preparation method and application thereof
CN115893502A (en) * 2022-11-08 2023-04-04 河南大学 Ferrous disulfide copper nanocrystalline and preparation method and application thereof

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