CN108666764A - A kind of strong absorber of ultra-thin Terahertz of multiband - Google Patents
A kind of strong absorber of ultra-thin Terahertz of multiband Download PDFInfo
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- CN108666764A CN108666764A CN201810396596.XA CN201810396596A CN108666764A CN 108666764 A CN108666764 A CN 108666764A CN 201810396596 A CN201810396596 A CN 201810396596A CN 108666764 A CN108666764 A CN 108666764A
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- terahertz
- multiband
- ultra
- strong absorber
- semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of strong absorbers of the ultra-thin Terahertz of multiband.It is t that the strong absorber of the ultra-thin Terahertz of the multiband, which is by thickness,1Metal film layer 1 and thickness be t2Semiconductor medium layer 2 be formed by stacking, wherein the semiconductor medium layer is made of semiconductor cylinder arrange in tetragonal array, the semiconductor cylinder height is t2, radius r, period p.Proposed by the invention mostly has thickness ultrathin with the strong absorber of ultra-thin Terahertz, and multiband, absorptivity is high, the advantages that being easily integrated.
Description
Technical field
The present invention relates to Terahertz Technology field more particularly to a kind of strong absorbers of the ultra-thin Terahertz of multiband.
Background technology
THz wave refers to that frequency is in 0.1THz-10THz, electromagnetism of the corresponding wave-length coverage between 0.03mm-3mm
Wave, in electromagnetic spectrum be located at microwave and it is infrared between.THz wave has the characteristics such as wide spectrum, highly transmissive, Low emissivity, logical
The fields such as letter, imaging and safety check have potential application prospect.In order to further expand and promote the application of Terahertz Technology, grind
The persons of studying carefully propose various Terahertz function elements, such as filter, switch, amplitude modulaor, phase-modulator, suction
Acceptor etc..However since nature lacks the natural material that ideal controllable frequency absorbs and Terahertz stealth technology exists
Rigors in military security, current Terahertz absorber cannot be satisfied the demand of practical application.In recent years, researcher
Also a variety of Terahertz absorbers are had devised, these absorbers are to be based on electromagnetism Meta Materials mostly, and structure, which uses, is similar to " three
The multilayered structure of Mingzhi " forms.These absorbent structure thickness are partially thick, and absorptivity is not high, complex technical process, not easy of integration.
For this purpose, in view of the drawbacks of the prior art, the present invention proposes a kind of strong absorber of ultra-thin Terahertz of multiband, which has
Thickness is thin, multiband, and absorptivity is high, the advantages that being easily integrated.
Invention content
The technical problem to be solved by the present invention is to multiple for the existing strong absorbent structure of the Terahertz based on electromagnetism Meta Materials
Miscellaneous, thickness is partially thick, cost is higher, absorptivity is not high, the technical deficiencies such as not easy of integration, it is proposed that a kind of ultra-thin Terahertz of multiband
Strong absorber.
The technical solution adopted by the present invention to solve the technical problems is：It is proposed that a kind of ultra-thin Terahertz of multiband absorbs by force
Body.It is t that the strong absorber of the ultra-thin Terahertz of the multiband, which is by thickness,1Metal film layer 1 and thickness be t2Semiconductor be situated between
Matter layer 2 is formed by stacking, and wherein semiconductor medium layer is made of the semiconductor cylinder arranged in tetragonal array, semiconductor
The height of cylinder is t2, radius r, period p.Proposed by the invention mostly has thickness with the strong absorber of ultra-thin Terahertz
Ultra-thin, multiband, absorptivity is high, the advantages that being easily integrated.
Further, the material of the metal film layer is noble metal, including but not limited to gold, silver and copper.
Further, the thickness t of the metal film layer1More than the skin depth of incident THz wave.
Further, the material of the semiconductor medium layer is semiconductor, including but not limited to silicon, germanium and GaAs.
Further, the thickness t of the semiconductor medium layer2It is 2-7 μm.
Further, the radius r of the semiconductor cylinder is 20-37 μm.
Further, the period of the semiconductor cylinder is 50-80 μm.
In conclusion a kind of the advantages of ultra-thin Terahertz of multiband strong absorber, is：
1, the absorbed thickness that this programme proposes is ultra-thin, simple in structure, is easily integrated；
2, absorption frequency can realize modulation by changing radius and its thickness of semiconductor cylinder；
3, the strong absorber of Terahertz has multiple strong absworption peaks, and absorptivity is up to 97% or more.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the structural schematic diagram of the strong absorber of multiband Terahertz；
Fig. 2 is the absorption spectrum figure of the strong absorber of multiband Terahertz；
It is indicated in figure：1, metal film layer；2, semiconductor medium layer.
Specific implementation mode
In order to keep the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, to this hair
It is bright to be further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and do not have to
It is of the invention in limiting：
Referring to Fig.1, the invention discloses a kind of strong absorbers of the ultra-thin Terahertz of multiband.The ultra-thin terahertz of the multiband
It is t that hereby strong absorber, which is by thickness,1Metal film layer 1 and thickness be t2Semiconductor medium layer 2 be formed by stacking, wherein partly leading
Body dielectric layer is made of the semiconductor cylinder arranged in tetragonal array, and the height of semiconductor cylinder is t2, radius
For r, period p.
With reference to Fig. 2, a kind of absorption spectrum of the strong absorber of ultra-thin Terahertz of multiband is given.Present embodiment is above-mentioned
A kind of concrete embodiment of embodiment, in the present embodiment, semiconductor cylinder in the strong absorber of the ultra-thin Terahertz of multiband
Period p be 80 μm, radius be 35 μm, material is silicon, thickness t2It it is 3.7 μm, the material of metal film layer is gold, thickness t1For
0.2μm.It can be seen from the figure that in the sections 4.0-6.0THz, there are four absorption peaks, frequency is from left to right followed successively by
4.628THz, 5.098THz, 5.246THz, 5.726THz, corresponding absorptivity are followed successively by 97.565%, 98.943%,
98.423%, 99.614%.
Claims (7)
1. a kind of strong absorber of ultra-thin Terahertz of multiband, it is characterised in that the strong absorber of the ultra-thin Terahertz of multiband is by gold
Belong to film layer 1 and semiconductor medium layer 2 is formed by stacking, wherein the semiconductor medium layer is by being in the arrangement of tetragonal array
Semiconductor cylinder constitute.
2. the strong absorber of Terahertz according to claim 1, it is characterised in that your gold the material of the metal film layer is
Belong to.
3. the strong absorber of Terahertz according to claim 1, it is characterised in that the thickness t of the metal film layer1Be more than into
Penetrate the skin depth of THz wave.
4. the strong absorber of Terahertz according to claim 1, it is characterised in that the material of the semiconductor medium layer is half
Conductor.
5. the strong absorber of Terahertz according to claim 1, it is characterised in that the thickness t of the semiconductor medium layer2For 2-
7μm。
6. the strong absorber of Terahertz according to claim 1, it is characterised in that the radius r of the semiconductor cylinder is
20-37μm。
7. the strong absorber of Terahertz according to claim 1, it is characterised in that the period of the semiconductor cylinder is 50-
80μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810396596.XA CN108666764A (en) | 2018-04-23 | 2018-04-23 | A kind of strong absorber of ultra-thin Terahertz of multiband |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810396596.XA CN108666764A (en) | 2018-04-23 | 2018-04-23 | A kind of strong absorber of ultra-thin Terahertz of multiband |
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| CN108666764A true CN108666764A (en) | 2018-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810396596.XA Pending CN108666764A (en) | 2018-04-23 | 2018-04-23 | A kind of strong absorber of ultra-thin Terahertz of multiband |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109683213A (en) * | 2019-02-28 | 2019-04-26 | 北京邮电大学 | The super surface of indium stibide film Terahertz and its thermal tuning method, preparation method |
| CN110600889A (en) * | 2019-10-25 | 2019-12-20 | 中国计量大学 | Terahertz three-frequency-band absorber with plastic sphere periodic structure |
| CN115279162A (en) * | 2022-08-01 | 2022-11-01 | 南京大学 | Perfect absorber and its preparing method |
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| CN1688590A (en) * | 2002-08-09 | 2005-10-26 | 能源变换设备有限公司 | Photonic crystals and devices having tunability and switchability |
| CN103199348A (en) * | 2013-04-10 | 2013-07-10 | 北京邮电大学 | Intermediate infrared 10.6-micrometer narrow bandwidth angle wave-absorbing material |
| CN106646680A (en) * | 2016-11-14 | 2017-05-10 | 四川大学 | One-way wave guide device based on composite structures |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
-
2018
- 2018-04-23 CN CN201810396596.XA patent/CN108666764A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1688590A (en) * | 2002-08-09 | 2005-10-26 | 能源变换设备有限公司 | Photonic crystals and devices having tunability and switchability |
| CN103199348A (en) * | 2013-04-10 | 2013-07-10 | 北京邮电大学 | Intermediate infrared 10.6-micrometer narrow bandwidth angle wave-absorbing material |
| CN106646680A (en) * | 2016-11-14 | 2017-05-10 | 四川大学 | One-way wave guide device based on composite structures |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109683213A (en) * | 2019-02-28 | 2019-04-26 | 北京邮电大学 | The super surface of indium stibide film Terahertz and its thermal tuning method, preparation method |
| CN109683213B (en) * | 2019-02-28 | 2019-09-27 | 北京邮电大学 | The super surface of indium stibide film Terahertz and its thermal tuning method, preparation method |
| CN110600889A (en) * | 2019-10-25 | 2019-12-20 | 中国计量大学 | Terahertz three-frequency-band absorber with plastic sphere periodic structure |
| CN110600889B (en) * | 2019-10-25 | 2020-10-09 | 中国计量大学 | Terahertz three-frequency-band absorber with plastic sphere periodic structure |
| CN115279162A (en) * | 2022-08-01 | 2022-11-01 | 南京大学 | Perfect absorber and its preparing method |
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