CN108663406A - A kind of application of light excitation air-sensitive sensing testing system - Google Patents
A kind of application of light excitation air-sensitive sensing testing system Download PDFInfo
- Publication number
- CN108663406A CN108663406A CN201810274769.0A CN201810274769A CN108663406A CN 108663406 A CN108663406 A CN 108663406A CN 201810274769 A CN201810274769 A CN 201810274769A CN 108663406 A CN108663406 A CN 108663406A
- Authority
- CN
- China
- Prior art keywords
- semi
- test instrument
- sensor
- testing system
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
Abstract
The invention discloses the applications that a kind of light excites air-sensitive sensing testing system, which is characterized in that includes the following steps：At room temperature, the sensor of wide band gap semiconducter is put into the test chamber of semi-conductor test instrument, gas to be tested is passed through in the test chamber of semi-conductor test instrument, by ultraviolet source close to the test cavity of semi-conductor test instrument, the sensor of wide band gap semiconducter is connected with semi-conductor test instrument simultaneously, significantly increasing for faradic response is detected by semi-conductor test instrument.The present invention changes the state of defect in material bodies by the electrons and holes that illumination introduces, change the adsorption capacity on metal-oxide semiconductor (MOS) surface and the concentration of adsorption site, the response performance for effectively improving them, to enable gas sensor to realize application and test process to sensor under relatively low operational temperature conditions.
Description
Technical field
The present invention relates to the applications that a kind of light excites air-sensitive sensing testing system, belong to gas sensor technology field.
Background technology
Resistance-type gas sensor based on metal oxide semiconductor material is up to the present to be most widely used
One kind.Sensors with auxiliary electrode has high sensitivity, easy to operate, small, of low cost, response time and recovery time short etc.
Advantage, therefore occupy leading position in current gas sensor test application and research.
Heater strip is currently to be installed allowed in sensitivity in gas sensor test system it is generally necessary on gas sensor
Peak temperature nearby works so that operating temperature is higher than room temperature, the work of usual Metal Oxide Semiconductor Gas Sensing element mostly
Temperature is generally within the scope of 175~425 DEG C, it is possible thereby to obtain higher sensitivity and faster response time.
Since gas sensor works under the high temperature conditions, additional heating power is not only consumed, increases installation cost, when existing
When field detecting imflammable gas concentration is more than gas burst lower limit, heating, which generates high temperature, to bring safety hidden gas ignition
Suffer from and even cause the insecurity such as fire, while being also to increase potential difficulty to the making of sensors with auxiliary electrode and test process
Degree.
Invention content
The technical problem to be solved by the present invention is to：It solves and how to make Metal Oxide Semiconductor Gas Sensing element in uneasiness
The problem of being worked in the case of dress heater strip heating.
In order to solve the above-mentioned technical problem, the technical solution of the present invention is to provide a kind of light excitation air-sensitive sensing testing systems
The application of system, which is characterized in that include the following steps：At room temperature, the sensor of wide band gap semiconducter semiconductor is put into survey
In the test chamber for trying instrument, gas to be tested is passed through in the test chamber of semi-conductor test instrument, by ultraviolet source close to partly leading
The test cavity of body tester, while the sensor of wide band gap semiconducter being connected with semi-conductor test instrument, it is surveyed by semiconductor
Examination instrument detects significantly increasing for faradic response.
Preferably, the wide band gap semiconducter is oxide and sulfide semiconductor.
Preferably, the wide band gap semiconducter is zno-based semiconductor.
Preferably, the gas sensor is zno-based semiconductor transducer, and method for making includes the following steps：It takes
ZnO nano material, which is dissolved in deionized water, is configured to solution, and the suspension solution being prepared is deposited on metal electrode, dry
The detector with electrode is formed afterwards.
Preferably, the gas to be tested is alcohol gas or oxygen or hydrogen or ammonia.
The present invention provides the test systems that a kind of light excites lower gas sensing device, in favor of lower operating temperature item
Realization is very significant with test process to the application of sensor under part, since metal oxide semiconductor is by a large amount of brilliant
The polycrystalline structure that grain and crystal boundary are constituted, light radiation can excite electron hole pair in intra-die, reduce interface potential barrier and reduction
Depletion width makes detection gas sensitivity obtain to the tunneling probability of potential barrier when increasing carrier transport to increase conductance
To raising.
The present invention changes the state of defect in material bodies by the electrons and holes that illumination introduces, and changes metal oxide
The adsorption capacity of semiconductor surface and the concentration of adsorption site, effectively improve their response performance, to make gas sensor
Application and the test process to sensor can be realized under relatively low operational temperature conditions.
Specific implementation mode
In order to make the present invention more obvious and understandable, it is hereby described in detail below with preferred embodiment.
The present invention is the application that a kind of light excites air-sensitive sensing testing system comprising following steps：
Using for zno-based semiconductor sensor device, sensing response takes ZnO nano material as test object in alcohol gas
It is dissolved in deionized water and is configured to solution concentration as 20mol/L, and the suspension solution being prepared deposition is (general to use chemical gas
Mutually ZnO nano material is made in deposition or hydro-thermal method, is then configured to solution, and micro syringe is drawn and is deposited on metal when deposition
On electrode.) on metal electrode, the detector (i.e. zno-based semiconductor sensor device) with electrode is formed after dry, then will
Detector with electrode is put into the test chamber of semi-conductor test instrument, by ultraviolet source close to test cavity, simultaneously will
Detector with electrode is connected with semi-conductor test instrument to be used for recording sensing data.Due to the detector with electrode
It is put into test chamber, cavity is entirely tested by ultraviolet light, photonasty is probably very well after Millisecond, irradiation
It can be seen that induced current starts to change.
Experiment carries out at room temperature, and the alcohol gas of various concentration is obtained by adjusting mass flow controller, this
In test cavity in alcohol gas flow be 2L/min, under the subdued light conditions of not ultraviolet lighting, when alcohol-free gas passes through
Response current is 0.02uA, when have alcohol air-flow by when then be 0.18uA, although response current increase still very little respond
Unobvious.If will open ultraviolet light simultaneously so that in direct projection to test cavity that faradic response increases to
1.6uA increases nearly 1 order of magnitude, hence it is evident that it is sensitive in alcohol gas to enhance the device compared to the case where no ultraviolet light
Degree.
Operating temperature based on semi-conductor oxidate gas sensor is higher than room temperature mostly, and light excitation is to reduce metal oxidation
A kind of effective method of object semi-conductor type gas sensor operating temperature.Can excite electronic in conduction band at room temperature go and
Good conductor is become, to reduce the operating temperature of gas sensor and be effectively improved its performance, the present invention is with Zinc oxide-base half
Conductor sensor is that sensing response is test source in alcohol gas, improves the device using ultraviolet light at room temperature
Gas sensitivity achieves preferable test effect.
The present invention provides a kind of test system of Sensitive Apparatus under ultraviolet lighting, the electrons and holes introduced due to illumination
The state for changing defect in material bodies, change metal-oxide semiconductor (MOS) surface adsorption capacity and adsorption site it is dense
Degree, strengthens the chemisorption on its surface, reduces the operating temperature of gas sensor and be effectively improved its performance, the design scheme ring
Border is friendly, it is simple to be easy to build and test.
Wherein, the present invention applies also for other gases other than being suitable for alcohol gas, for example, oxygen, hydrogen, ammonia
Gas etc..Zno-based semiconductor transducer in the present invention can be substituted using other wide band gap semiconducters, such as similar to oxide
With sulfide semiconductor sensor.
Claims (5)
1. a kind of application of light excitation air-sensitive sensing testing system, which is characterized in that include the following steps：It at room temperature, will be wide
The sensor of gap semiconductor is put into the test chamber of semi-conductor test instrument, is passed through in the test chamber of semi-conductor test instrument to be measured
Gas testing body, by ultraviolet source close to the test cavity of semi-conductor test instrument, while by the sensor of wide band gap semiconducter with
Semi-conductor test instrument is connected, and significantly increasing for faradic response is detected by semi-conductor test instrument.
2. a kind of application of light excitation air-sensitive sensing testing system as described in claim 1, which is characterized in that the broadband
Gap semiconductor is oxide and sulfide semiconductor.
3. a kind of application of light excitation air-sensitive sensing testing system as claimed in claim 2, which is characterized in that the broadband
Gap semiconductor is zno-based semiconductor.
4. a kind of application of light excitation air-sensitive sensing testing system as claimed in claim 3, which is characterized in that the air-sensitive
Sensor is zno-based semiconductor transducer, and method for making includes the following steps：ZnO nano material is taken to be dissolved in deionized water
It is configured to solution, the suspension solution being prepared is deposited on metal electrode, the detector with electrode is formed after dry.
5. a kind of application of light excitation air-sensitive sensing testing system as described in claim 1, which is characterized in that described is to be measured
Gas testing body is alcohol gas or oxygen or hydrogen or ammonia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810274769.0A CN108663406A (en) | 2018-03-29 | 2018-03-29 | A kind of application of light excitation air-sensitive sensing testing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810274769.0A CN108663406A (en) | 2018-03-29 | 2018-03-29 | A kind of application of light excitation air-sensitive sensing testing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108663406A true CN108663406A (en) | 2018-10-16 |
Family
ID=63782160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810274769.0A Pending CN108663406A (en) | 2018-03-29 | 2018-03-29 | A kind of application of light excitation air-sensitive sensing testing system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108663406A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111380925A (en) * | 2018-12-27 | 2020-07-07 | 财团法人交大思源基金会 | Gas sensing device |
| CN113237927A (en) * | 2021-05-11 | 2021-08-10 | 昆明理工大学 | Method for improving gas-sensitive response performance of ZIF-8 to ethanol gas |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645120A (en) * | 2005-01-27 | 2005-07-27 | 上海交通大学 | Photoactivating nanometer oxide semiconductor air sensitive sensors |
| CN1724383A (en) * | 2005-06-21 | 2006-01-25 | 电子科技大学 | Process for preparing one-dimensional nano tin dioxide material |
| CN101929958A (en) * | 2010-07-05 | 2010-12-29 | 吉林大学 | High-sensitivity photosensitive gas sensor and preparation method thereof |
| CN104391006A (en) * | 2014-11-13 | 2015-03-04 | 无锡信大气象传感网科技有限公司 | Preparation method of gas sensor |
| CN104422671A (en) * | 2013-08-30 | 2015-03-18 | 华中科技大学 | Method and device for improving photo-excitation gas-sensitive property of titanium dioxide |
| CN205941445U (en) * | 2016-08-03 | 2017-02-08 | 天津喜诺生物医药有限公司 | Graphite alkene sensor of short -term test gram -negative bacteria lipopolysaccharide |
-
2018
- 2018-03-29 CN CN201810274769.0A patent/CN108663406A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645120A (en) * | 2005-01-27 | 2005-07-27 | 上海交通大学 | Photoactivating nanometer oxide semiconductor air sensitive sensors |
| CN1280624C (en) * | 2005-01-27 | 2006-10-18 | 上海交通大学 | Photoactivating nanometer oxide semiconductor air sensitive sensors |
| CN1724383A (en) * | 2005-06-21 | 2006-01-25 | 电子科技大学 | Process for preparing one-dimensional nano tin dioxide material |
| CN101929958A (en) * | 2010-07-05 | 2010-12-29 | 吉林大学 | High-sensitivity photosensitive gas sensor and preparation method thereof |
| CN104422671A (en) * | 2013-08-30 | 2015-03-18 | 华中科技大学 | Method and device for improving photo-excitation gas-sensitive property of titanium dioxide |
| CN104391006A (en) * | 2014-11-13 | 2015-03-04 | 无锡信大气象传感网科技有限公司 | Preparation method of gas sensor |
| CN205941445U (en) * | 2016-08-03 | 2017-02-08 | 天津喜诺生物医药有限公司 | Graphite alkene sensor of short -term test gram -negative bacteria lipopolysaccharide |
Non-Patent Citations (3)
| Title |
|---|
| 叶小亮: "基于ZnO/Graphene纳米复合材料紫外光探测器的制备与实现", 《上海电机学院学报》 * |
| 张宏: "紫外光照下纳米SnO2-TiO2复合材料气敏性能研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
| 汤会香: "ZnO纳米颗粒气敏性能的研究", 《中国优秀博硕士学位论文全文数据库 (博士) 工程科技Ⅰ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111380925A (en) * | 2018-12-27 | 2020-07-07 | 财团法人交大思源基金会 | Gas sensing device |
| CN113237927A (en) * | 2021-05-11 | 2021-08-10 | 昆明理工大学 | Method for improving gas-sensitive response performance of ZIF-8 to ethanol gas |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yuan et al. | Detection and identification of volatile organic compounds based on temperature-modulated ZnO sensors | |
| Schipani et al. | Conduction mechanisms in SnO2 single-nanowire gas sensors: An impedance spectroscopy study | |
| Zhu et al. | Self-heated hydrogen gas sensors based on Pt-coated W18O49 nanowire networks with high sensitivity, good selectivity and low power consumption | |
| Korotcenkov et al. | Kinetics of indium oxide-based thin film gas sensor response: The role of “redox” and adsorption/desorption processes in gas sensing effects | |
| Yang et al. | A novel electronic nose based on porous In2O3 microtubes sensor array for the discrimination of VOCs | |
| Abu-Hani et al. | Design, fabrication, and characterization of low-power gas sensors based on organic-inorganic nano-composite | |
| KR20090082389A (en) | Hydrogen sensitive composite material, tubular sensor for detecting hydrogen and other gases | |
| Niskanen et al. | Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors | |
| Hossein-Babaei et al. | Analysis of thickness dependence of the sensitivity in thin film resistive gas sensors | |
| CN110161084B (en) | Micro-sensing chip, preparation method thereof, gas detection method and application | |
| Xing-Hui et al. | Electrical and gas-sensing properties of perovskite-type CdSnO3 semiconductor material | |
| CN108663406A (en) | A kind of application of light excitation air-sensitive sensing testing system | |
| Bobkov et al. | Study of gas-sensitive properties of zinc oxide nanorod array at room temperature | |
| CN103760196B (en) | A kind of Birnessite type manganese dioxide nanosheet hydrogen sensor and preparation method thereof | |
| Huang et al. | Design of an electrochemiluminescence detection system through the regulation of charge density in a microchannel | |
| US20130202489A1 (en) | Gas sensor with a highly porous structure constructed of catalyst-capped metal-oxide nanoclusters | |
| US4485667A (en) | Method, sensor and device for detecting trace quantities of gases in a gaseous medium | |
| WO2021106615A1 (en) | Gas detection method and information processing device | |
| Ghahrizjani et al. | Highly sensitive H2S gas sensor containing simultaneously UV treated and self-heated Ag-SnO2 nanoparticles | |
| RU2132551C1 (en) | Gas sensor operating process | |
| KR20110120039A (en) | Hydrogen sensor and manufacturing method thereof | |
| US20190317036A1 (en) | Gas sensor | |
| CN108139348A (en) | Refrigerant analyzer and its application method | |
| KR20120085003A (en) | Device for monitoring of the reducing gases in atmosphere on the basis of solid state semiconductor gas sensors | |
| CN113970578B (en) | Universal data normalization calibration method for resistance type micro gas sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |