CN108649304A - A kind of electromagnetic wave isolator based on magnet-optical medium - Google Patents
A kind of electromagnetic wave isolator based on magnet-optical medium Download PDFInfo
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- CN108649304A CN108649304A CN201810719020.2A CN201810719020A CN108649304A CN 108649304 A CN108649304 A CN 108649304A CN 201810719020 A CN201810719020 A CN 201810719020A CN 108649304 A CN108649304 A CN 108649304A
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- 238000000034 method Methods 0.000 claims abstract description 31
- 239000003989 dielectric material Substances 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims description 24
- 230000005611 electricity Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 9
- 239000002223 garnet Substances 0.000 claims description 3
- 239000000382 optic material Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- 230000000644 propagated effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 230000006698 induction Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009365 direct transmission Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
Abstract
The invention discloses a kind of electromagnetic wave isolator based on magnet-optical medium includes the dielectric layers of 4 stackings, and two dielectric layer of centre of 4 dielectric layers is common dielectric material, and thickness is d1, the media of both sides layer that two layers of the centre is magneto-optic memory technique, and thickness is d2.The present invention is using the electromagnetic parameter of magneto-optic memory technique with the variation anisotropic properties of incident wave frequency rate and the special relationship of externally-applied magnetic field to realize the nonreciprocity of wave；And change incident angle or externally-applied magnetic field size, frequency that can be with this configuration is then filtered out, further enhances the intensity of the one way propagation of light, and this has the advantages of simple structure and easy realization.
Description
Technical field
The invention belongs to electromagnetic technology field, specifically a kind of electromagnetic wave isolator based on magnet-optical medium.
Background technology
Electromagnetic wave isolator is that have unidirectional electricity using the generation of the one-dimensional layer structure magnet-optical medium material of electromagnetic wave incident
Magnetic propagation characteristic device can be formed when on electromagnetic wave incident to the boundary of two kinds of different magnet-optical mediums with nonreciprocity
Optical surface plasma wave (SPP).Due to the special electromagnetic parameter in telegram in reply medium so that the SPP waves excitation tool on surface
There is non-heterogeneite, has broken the symmetry of Electromagnetic Wave Propagation over time and space, it, can be in the frequency of excitation SPP states
Realize unidirectional Electromagnetic Wave Propagation effect.Since magneto-optic memory technique is anisotropic material, different angle, frequency incident waveform at
Different situations is had, to form the unidirectional delivery of electromagnetic wave, forms isolator.The unidirectional biography of electromagnetic wave in the structure
It is defeated, it is different from conventional isolator, but by the variation of external magnetic field to change the frequency of passable electromagnetic wave.The electricity
Magnetic wave one-way transmission theory is optic communication device, the research of optical sensor etc. provides certain theoretical foundation.
Chinese Patent Application No. 2016109993339 discloses a kind of unidirectional Bragg Transducer for Waveguide Devices based on composite construction, realizes
The asymmetric transmission of light wave.It includes the composite construction of periodic arrangement in substrate and substrate；The composite construction includes being situated between
Matter column and metal dish, the metal dish are located at the top of the dielectric posts；The metal dish is for making electromagnetic wave generate gas ions
Resonance or phonon-resonant.The invention can be very by adjusting the arrangement period of result is met suitable for integrated-optic device
There is good one-way conduction effect, but the invention does not have using material itself to each to different of light within the scope of wide wavestrip
Property and electromagnetic wave incident to the boundary of two kinds of different mediums on when non-heterogeneite dispersion, so that electromagnetic wave is had in transmission single
Property characteristic.
Invention content
The purpose of the present invention is exactly in order to solve the above technical problems, in electromagnetic technology field, and the purpose is to utilize material sheet
Non- heterogeneite dispersion when body is in the anisotropy and electromagnetic wave incident to the boundary of two kinds of different mediums of light, makes electromagnetic wave
There is unisexuality characteristic in transmission.By changing incident angle or externally-applied magnetic field size, then filtering out can be with this configuration
Frequency further enhances the intensity of the one way propagation of light and reduces infrastructure cost.
The technical solution adopted by the present invention is as follows：A kind of electromagnetic wave isolator based on magnet-optical medium, including 4 stacking
Two dielectric layer of centre of dielectric layer, 4 dielectric layers is common dielectric material, and thickness is d1, the two of two layers of the centre
Side dielectric layer is magneto-optic memory technique, and thickness is d2。
The magneto-optic memory technique relative dielectric constant is：
Tensor form, the magnetic conductivity of the magneto-optic memory technique is μ0, the relative dielectric constant of the common dielectric material is
ε, magnetic conductivity μ1, wherein ωpe=5.0 × 1010s-1
For plasma resonance frequency, ωle=1.76 × 1011B is cyclotron frequency, and B is the magnetic induction intensity of externally-applied magnetic field, ω be into
The angular frequency of radio magnetic wave.
The dielectric layer of 4 stackings is in air environment.
The magneto-optic memory technique generates transmission characteristic by electromagnetic wave from air incidence.
The magneto-optic memory technique is anisotropic electricity convolution magneto-optic memory technique.
The electricity convolution magneto-optic memory technique is yttrium-aluminium-garnet.
Specifically, the present invention has the beneficial effect that：
1) simple in structure, compare traditional structure, it is easy to accomplish, and good effect can be reached.
2) the unidirectional SPP mode formed on the interface with outer incident electromagnetic wave between dielectric layer and magneto-optic material layer,
To realize the one way propagation of electromagnetic wave.
3) utilize the special relationship of magneto-optic memory technique and externally-applied magnetic field to realize the nonreciprocity of wave；Intermediate Jie can be changed
The thickness of matter layer and the electromagnetic parameter of medium, and change incident angle or externally-applied magnetic field size, then filtering out can be by this
The frequency of structure further enhances the intensity of the one way propagation of light.
Description of the drawings
Fig. 1 is the electromagnetic wave isolator structure schematic diagram based on magnet-optical medium.
Fig. 2 be incidence angle all be 30 ° when transmission coefficient and incident electromagnetic wave frequency relation figure.
Fig. 3 be incidence angle all be 30 ° when just with negative direction incident electromagnetic wave in dielectric layer magnetic field distribution figure.
Fig. 4 is the transmission peak value changing rule figure therewith when incidence angle θ size variation.
Fig. 5 is the transmission peak value changing rule figure therewith when applying magnetic field B size variations.
When Fig. 6 is intermediate generic media layer thickness variation, transmission peak value changing rule figure therewith.
Fig. 7 (a), Fig. 7 (b) are the field patterns of embodiment 1.
Fig. 8 (a), Fig. 8 (b) are the field patterns of embodiment 1.
Specific implementation mode
The present invention is further described with reference to the accompanying drawings and examples：
As shown in figs. 1-7, the present invention it include 4 stacking dielectric layers, two dielectric layer of centre of 4 dielectric layers
For common dielectric material, for example, silicon dielectric layer, thickness is d1, the media of both sides layer that two layers of the centre is magneto-optic memory technique,
Thickness is d2.The magneto-optic memory technique is electricity convolution magneto-optic memory technique, such as yttrium-aluminium-garnet.The dielectric layer of 4 stackings is in
In air environment.
The magneto-optic memory technique relative dielectric constant is：
Tensor form, the magnetic conductivity of the magneto-optic memory technique is μ0, the relative dielectric constant of the common dielectric material is
ε, magnetic conductivity μ1, wherein ωpe=5.0 × 1010s-1
For plasma resonance frequency, ωle=1.76 × 1011B is cyclotron frequency, and B is the magnetic induction intensity of externally-applied magnetic field, ω be into
The angular frequency of radio magnetic wave.
The magneto-optic memory technique generates transmission characteristic by electromagnetic wave from air incidence, and then will use Maxwell equation
Group, electromagnetic boundary conditions and transmission matrix are theoretical, obtain the relationship of the structure transmission coefficient and frequency, determine non-heterogeneite frequency
Rate；In this configuration, it is verified by numerical analysis (Fortran language compilations emulation)：Magneto-optic memory technique is normal with respect to dielectric
Number
Whereinωpe=5.0 × 1010s-1For etc.
Gas ions resonant frequency, ωle=1.76 × 1011B is cyclotron frequency, and B is the magnetic induction intensity of externally-applied magnetic field, and ω is into radio
The angular frequency of magnetic wave.For incident electric field, electromagnetic wave has following expression-form：
Wherein(i.e. (1) formula and (2) formula) indicate to be incident in medium in left side air respectively
The distribution situation of electric field and magnetic field,X, the wave vector on tri- directions y, z, k are indicated respectivelyxIt is the wave vector in the directions x
Amount.(3) formula and (4) formula obtain x, z, the electric field component in direction according to maxwell equation group and electromagnetism field border condition.
It enableskzAs wave in general telegram in reply medium along the wave vector of Z-direction.Thus
Magnetic field and electric field component H in general telegram in reply medium can be obtainedy Ex：
WithIt is the magnetic-field component that forward and reverse is propagated in same dielectric layer respectively, whereinAccording to electric field and the cross stream component in magnetic field tangential
It is continuous, the transformation matrix of the electric field and magnetic field cross stream component of i layers and the adjacent bed boundarys j or so can be obtained by (6) formula and (7) formula
For Tij
Wherein：
(9) formula is the matrix expression of jth layer field component, and the form of inverse matrix is：
In same dielectric layer, on a left side (preceding) for dielectric layer while to right (rear), the phase shift factor of generation is electromagnetic wave：
Then electromagnetic wave total transmission matrix of another side (air layer) is incident on from one side (air layer) of multilayer dielectricity can
It is written as：
T=T12P2T23P3···T(N-1)NPNTN(N+1) (12)
Transmission matrix T can be reduced on this basis：
Thus the electromagnetic wave that can get TM patterns passes through the reflectance factor r and transmission coefficient t of multilayer dielectricity layer：
Electromagnetic wave propagation characteristic can be obtained by its reflection and transmission coefficients at interface.
Embodiment 1：It is respectively d to choose silicon dielectric layer and electricity convolution magnet-optical medium layer thickness1=25mm, d2The knot of=30mm
For structure model, electricity convolution magneto-optic memory technique in left side adds forward direction magnetic field 0.02T in intermediate two layers of media of both sides layer, and right side electricity returns
Gyromagnet luminescent material adds opposing magnetic field 0.02T.Wherein both sides electricity convolution magneto-optic relative dielectric constant isChange with impressed frequency
And change, relative permeability 1, the relative dielectric constant of intermediate silicon dielectric layer is ε=2.07, then relative permeability 1 divides
Not at left and right sides of structure, with 30 ° of incident angles.
By the transmission coefficient of Fig. 2 with the variation relation of frequency as it can be seen that forward entrance frequency is f=5.10673e14Hz, thoroughly
It is 1 to penetrate coefficient, and electromagnetic wave is completely through (Fig. 2 solid lines).When corresponding diagram 7 (a) and Fig. 7 (b) are the frequency forward and reverse incidence
Magnetic field with position distribution map, it is seen that find electromagnetic wave from left side forward entrance when, pass through completely, and reversed incident, by structure
It is fully reflective, form ideal standing wave in incidence zone.
Reversed incidence f=5.22093e14Hz transmission coefficients are 1 under similarity condition, and electromagnetic wave is completely through (Fig. 2 dotted lines).
When corresponding diagram 8 (a) and Fig. 8 (b) are the frequency forward and reverse incidence magnetic field with position distribution map, it is seen that find electromagnetic wave from
When the incidence of right side, pass through completely, and from left side to incidence, it is fully reflective by structure, form ideal standing wave in incidence zone.
Electromagnetic wave is further analyzed in implementation process in multilayered structure propagation characteristic, by Fig. 3 (a) as it can be seen that f=
When 5.10673e14Hz is propagated from left side, resonance (solid line) is formd in the structure, and is penetrated from right side is incoming, and resonance can not be formed
(dotted line) its interrupt line indicates different dielectric layers；And for f=5.22093e14Hz (Fig. 3 (b)), when being propagated from right side,
Resonance (solid line) is formd in structure, and from left side incidence, resonance (dotted line) can not be formed；Therefore due to structure electromagnetic parameter
Not to becoming second nature, cause the resonant frequency of forward and reverse incident electromagnetic wave in the structure different.It can be formed in multilayered structure
Resonance is the reason of can electromagnetic wave be propagated wherein.
It can be seen that the asymmetry of the multilayered structure electromagnetic parameter leads to the one-way conduction to magnetic wave.
Embodiment 2：It is respectively d to choose silicon dielectric layer and electricity convolution magnet-optical medium layer thickness1=25mm, d2The knot of=30mm
For structure model, electricity convolution magneto-optic memory technique in left side adds forward direction magnetic field 0.02T in intermediate two layers of media of both sides layer, and right side electricity returns
Gyromagnet luminescent material adds opposing magnetic field 0.02T.Wherein both sides electricity convolution magneto-optic memory technique relative dielectric constant isWith entering radio frequency
Rate changes and changes, magnetic conductivity 1, and intermediate silicon dielectric layer is ε=2.07 to dielectric constant, then relative permeability 1 divides
Not at left and right sides of structure, with different incident angles.Fig. 4 is that be respectively 30 °, 45 ° and 60 ° forward and reverses be incidence angle
The relationship of transmission coefficient and frequency.It can be seen that with the variation of angle, the frequency of non-heterogeneite direct transmission is to high-frequency mobile, simultaneously
The spacing of the incident wave frequency rate of forward and reverse conducting increases, therefore big incident angle, the one-way conduction energy of the electromagnetic wave of structure
Power is stronger.
Embodiment 3：It is respectively d to choose silicon dielectric layer and electricity convolution magnet-optical medium layer thickness1=25mm, d2The knot of=30mm
For structure model, intermediate silicon dielectric layer is ε=2.07, relative permeability 1, wherein both sides electricity convolution magneto-optic to dielectric constant
Material relative dielectric constant isChange with incident frequencies and change, magnetic conductivity 1, incident angle is 30 °.Intermediate two layers
The electricity convolution magneto-optic memory technique of left and right side adds positive reverse magnetic field magnetic field, the size difference in magnetic field respectively in media of both sides layer
It is 0.02T, 0.04T and 0.06T.Fig. 5 be under different external magnetic fields, transmission coefficient with frequency variation (solid line indicate just
To propagation, dotted line indicates backpropagation).As seen from the figure, with the enhancing of externally-applied magnetic field, the frequency of positive direct transmission wave is to low
Frequency displacement is dynamic, and the frequency of reversed transmitted wave is to high-frequency mobile.The increase of externally-applied magnetic field increases the difference of structure both sides electromagnetic parameter
The opposite sex also leads to enhancing of the electromagnetic wave just with the non-heterogeneite of reverse-conducting.
Embodiment 4：It is d to choose electricity convolution magnet-optical medium layer thickness2=30mm, silicon dielectric layer d1Structural model for,
Electricity convolution magneto-optic memory technique in left side adds forward direction magnetic field 0.02T, right side electricity convolution magneto-optic memory technique in the media of both sides layer that two layers of centre
Add opposing magnetic field 0.02T.Wherein both sides electricity convolution magneto-optic memory technique relative dielectric constant isChange with incident frequencies and becomes
Change, relative permeability 1, intermediate silicon dielectric layer is ε=2.07, relative permeability 1, then respectively from knot to dielectric constant
At left and right sides of structure, incident angle is 30 °.When the thickness of silicon dielectric layer is respectively 30cm, 25cm and 20cm, Fig. 6 be it is positive and
(solid line indicates that forward-propagating, dotted line indicate reversed and pass to the transmission coefficient relationship with frequency change of reversed incident electromagnetic wave
It broadcasts).As can be seen from the figure with the reduction of silicon dielectric layer thickness, positive and direction frequencies of transmission is to high-frequency mobile, simultaneously
Positive and direction frequencies of transmission spacing increases, one-way enhancing.
Other undeclared parts of the present invention are same as the prior art.
Claims (6)
1. a kind of electromagnetic wave isolator based on magnet-optical medium, it is characterised in that the dielectric layer being laminated including 4,4 Jie
Two dielectric layer of centre of matter layer is common dielectric material, and thickness is d1, the media of both sides layer that two layers of the centre is magneto-optic material
Material, thickness is d2。
2. the electromagnetic wave isolator according to claim 1 based on magnet-optical medium, it is characterized in that the phase of the magneto-optic memory technique
It is to dielectric constant
Tensor form, the magnetic conductivity of the magneto-optic memory technique is μ0, the relative dielectric constant of the common dielectric material is ε, magnetic conductance
Rate is μ1。
3. the electromagnetic wave isolator according to claim 1 based on magnet-optical medium, it is characterized in that the medium of 4 stackings
Layer is in air environment.
4. the electromagnetic wave isolator according to claim 1 based on magnet-optical medium, it is characterized in that the magneto-optic memory technique passes through
Electromagnetic wave generates transmission characteristic from air incidence.
5. the electromagnetic wave isolator according to claim 1 based on magnet-optical medium, it is characterized in that the magneto-optic memory technique is each
The electricity convolution magneto-optic memory technique of anisotropy.
6. the electromagnetic wave isolator according to claim 5 based on magnet-optical medium, it is characterized in that the electricity convolution magneto-optic material
Material is yttrium-aluminium-garnet.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113608372A (en) * | 2021-07-14 | 2021-11-05 | 江苏大学 | PT symmetrical coupling microcavity and magnetic microcavity composite structure and application thereof |
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| JP2002139718A (en) * | 2000-11-02 | 2002-05-17 | Minebea Co Ltd | Magneto-optical body and method of manufacturing foe the same |
| CN104483764A (en) * | 2014-11-11 | 2015-04-01 | 江苏大学 | Defective magneto photon crystal with non-reciprocity feature and purpose |
| CN105093571A (en) * | 2015-07-31 | 2015-11-25 | 南京邮电大学 | Large-incident-angle magnetic photonic crystal broadband photoisolator |
| CN106681027A (en) * | 2016-11-04 | 2017-05-17 | 广州科技职业技术学院 | One-way slow light defect waveguiding structure based on magnetic photonic crystals and non-reciprocal device |
| CN208315724U (en) * | 2018-07-03 | 2019-01-01 | 南京林业大学 | A kind of electromagnetic wave isolator based on magnet-optical medium |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002139718A (en) * | 2000-11-02 | 2002-05-17 | Minebea Co Ltd | Magneto-optical body and method of manufacturing foe the same |
| CN104483764A (en) * | 2014-11-11 | 2015-04-01 | 江苏大学 | Defective magneto photon crystal with non-reciprocity feature and purpose |
| CN105093571A (en) * | 2015-07-31 | 2015-11-25 | 南京邮电大学 | Large-incident-angle magnetic photonic crystal broadband photoisolator |
| CN106681027A (en) * | 2016-11-04 | 2017-05-17 | 广州科技职业技术学院 | One-way slow light defect waveguiding structure based on magnetic photonic crystals and non-reciprocal device |
| CN208315724U (en) * | 2018-07-03 | 2019-01-01 | 南京林业大学 | A kind of electromagnetic wave isolator based on magnet-optical medium |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113608372A (en) * | 2021-07-14 | 2021-11-05 | 江苏大学 | PT symmetrical coupling microcavity and magnetic microcavity composite structure and application thereof |
| CN113608372B (en) * | 2021-07-14 | 2024-03-19 | 江苏大学 | PT symmetrical coupling microcavity and magnetic microcavity composite structure and application thereof |
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