CN108648958A - A kind of conversion hysteria function relay - Google Patents
A kind of conversion hysteria function relay Download PDFInfo
- Publication number
- CN108648958A CN108648958A CN201810614214.6A CN201810614214A CN108648958A CN 108648958 A CN108648958 A CN 108648958A CN 201810614214 A CN201810614214 A CN 201810614214A CN 108648958 A CN108648958 A CN 108648958A
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- pin
- semiconductor
- oxide
- light emitting
- emitting diode
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- 208000012839 conversion disease Diseases 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 229920003023 plastic Polymers 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
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- Electronic Switches (AREA)
Abstract
The present invention relates to a kind of conversion hysteria function relays comprising input, output end, light emitting diode, photodiode arrangement, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2；The input terminal includes the defeated pin of anode and cathode input pin；The output end includes common pin, normally closed pin and normally opened pin；The positive input pin of anode connection of the light emitting diode, cathode connect cathode input pin；The photodiode arrangement is close to light emitting diode, the grid of the anode connection depletion type MOS tube M1 of the photodiode arrangement, and the drain electrode of depletion type MOS tube M1 connects normally closed pin, and source electrode connects common pin；The cathode of the grid connection photodiode arrangement of the enhanced metal-oxide-semiconductor M2, the drain electrode of enhanced metal-oxide-semiconductor M2 connect normally opened pin, and source electrode then connects common pin.For realizing switching using mechanical action, relay of the invention realizes the No-contact switch of mechanical action in switching, and faster, service life is also longer for switching frequency.
Description
Technical field
The present invention relates to electric appliance and electronic technical fields, and in particular to a kind of conversion hysteria function relay.
Background technology
Conversion hysteria relay is a vital classification in relay, especially in signal relay industry.Such as Fig. 1 institutes
Show, current conversion hysteria relay generally comprise electromagnet 1 ', armature 2 ', a movable contact 3 ', a normally-closed contact 5 ', one it is normally opened touch
Point 4 ', after being powered to electromagnet 1 ', electromagnet 1 ' generates gravitation to armature 2 ', and movable contact 3 ' is made to be contacted with normally opened contact 4 '；
And after disconnecting the power supply of electromagnet 1 ', movable contact 3 ' contacts normally-closed contact 5 ' under the action of the spring.The conversion hysteria relay is adopted
With mechanical movement form push movable contact go with the contact of different transfer contact, short with mechanical life, operating frequency is low,
The inevitable short slabs such as special volume is big.
In view of this, the present inventor is directed to many defects existing for above-mentioned conversion hysteria relay, and deeply conceive, Jin Erkai
Send out the present invention.
Invention content
The purpose of the present invention is to provide the fast conversion hysteria function relays of a kind of service life length, operating frequency.
To achieve the above object, the technical solution adopted by the present invention is：
A kind of conversion hysteria function relay comprising input, output end, light emitting diode, photodiode arrangement, depletion type
Metal-oxide-semiconductor M1 and enhanced metal-oxide-semiconductor M2；The input terminal includes the defeated pin of anode and cathode input pin；The output end includes
Common pin, normally closed pin and normally opened pin；
The positive input pin of anode connection of the light emitting diode, cathode connect cathode input pin；The photodiode
Array is close to light emitting diode, the grid of the anode connection depletion type MOS tube M1 of the photodiode arrangement, and depletion type
The drain electrode of metal-oxide-semiconductor M1 connects normally closed pin, and source electrode connects common pin；The grid connection photosensitive two of the enhanced metal-oxide-semiconductor M2
The drain electrode of the cathode of pole pipe array, enhanced metal-oxide-semiconductor M2 connects normally opened pin, and source electrode then connects common pin.
The relay further includes holder, the light emitting diode, photodiode arrangement, depletion type MOS tube M1 and increasing
Strong type metal-oxide-semiconductor M2 is integrally disposed on holder.
The holder is equipped with lens or the interior encapsulating of translucent numerical value and the plastics outer encapsulating of black, wherein interior encapsulating
It is wrapped on light emitting diode, photodiode arrangement, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2, plastics outer encapsulating is then set
It sets outside encapsulating inside.
After adopting the above scheme, when the input terminal of invention relay is without input signal, the drain electrode of depletion type MOS tube and source
Pole is connected, and so that the common pin of relay is connected to normally closed pin, realizes the closure function of relay；Believe when being inputted to input terminal
Number when, the drain electrode of enhanced metal-oxide-semiconductor and source conduction make the common pin of relay be connected to normally opened pin, realize relay
From the switching for being closed into disconnection.That is, invention relay is by controlling whether in input terminal input control signal, simultaneously
Utilize the element characteristic of depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2, you can the power and energy of relay is realized, compared to utilization
For mechanical action realizes switching, relay of the invention realize it is contactless connect ring, faster, service life is also more for switching frequency
It is long.
In addition, the present invention is by light emitting diode, photodiode arrangement, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2 collection
At be arranged on holder, while on holder be arranged in encapsulating and plastics outer encapsulating so that relay it is small, improve after
The ease of use of electric appliance.
Description of the drawings
Fig. 1 is the structural schematic diagram of existing conversion hysteria relay；
Fig. 2 is conversion hysteria function relay internal structure schematic diagram of the present invention；
Circuit diagram when Fig. 3 is conversion hysteria function relay input control signal of the present invention；
Fig. 4 is the encapsulation schematic diagram of conversion hysteria function relay of the present invention.
Specific implementation mode
As shown in Fig. 2, present invention is disclosed a kind of conversion hysteria function relays comprising holder 3, input terminal 1, output end
2, light emitting diode D10, photodiode arrangement D20, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2, light emitting diode D10,
Photodiode arrangement D20, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2 are integrally disposed on holder 3.
Wherein, input terminal 1 includes the defeated pin 11 of anode and cathode input pin 12；Output end 2 include common pin 21, often
Pin 22 and normally opened pin 23 are closed, the closure function of relay is realized when common pin 23 is connected with normally closed pin 22, it is public to draw
The break function of relay is realized when foot 21 is connected with normally opened pin 23.
The positive input pin 11 of anode connection of light emitting diode D10, cathode connect cathode input pin 12.Photosensitive two pole
For pipe array D20 close to light emitting diode D10, the anode of photodiode arrangement D20 connects the grid of depletion type MOS tube M1, and
The drain electrode of depletion type MOS tube M1 connects normally closed pin 22, and source electrode connects common pin 21.And the grid of enhanced metal-oxide-semiconductor M2 connects
The cathode of photodiode arrangement D20 is connect, the drain electrode of enhanced metal-oxide-semiconductor M2 connects normally opened pin 23, and source electrode then connects public draw
Foot 21.
As shown in figure 3, when input terminal has input signal, i.e., positive input pin 11 and cathode input pin 12 to input respectively
Corresponding signal so that light emitting diode D10 normal works emit beam.At this point, photodiode arrangement D20 receives illumination,
Voltage is generated, which is applied on depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2.At this point, the grid of depletion type MOS tube M1
For high level, the drain electrode of depletion type MOS tube M1 and source electrode are ended, and normally closed pin 22 and common pin 21 is made to lead disconnection；And increase
The grid of strong type metal-oxide-semiconductor M2 is high level, drain electrode and source conduction, so that normally opened pin 23 is connected to common pin 21, quite
It is closed in common end 21 and normally open end 23.
When input terminal is without input signal, light emitting diode D10 no longer emits beam, and photodiode arrangement D20 is not yet
Voltage is generated again.At this point, the grid of depletion type MOS tube M1 is low level, drain electrode and source conduction make normally closed pin 22 and public affairs
Pin 21 is connected to altogether；And the grid of enhanced metal-oxide-semiconductor M2 is low level, drain electrode and source electrode are ended, and 23 He of normally opened pin is made
Common pin 21 disconnects, and is equivalent to common end 21 at this time and is transformed into order to which common end 21 and 22 is closed, to real by being closed with 23
The common end of relay is showed by being closed the conversion function for being transferred to and being closed with 22 with 23.
To sum up, when input terminal input signal, you can realize the output end 1 of relay from common pin 21 and normally closed pin
22 are conducting to the conversion of common pin 21 and the conducting of normally opened pin 23.And relay only need it is defeated in input terminal 1 by controlling whether
Enter and control signal, while utilizing the element characteristic of depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2, you can conversion is realized, compared to profit
For realizing switching with mechanical action, faster, service life is also longer for the operating frequency of relay of the invention in switching.
When photodiode arrangement D20 is irradiated by ambient, photodiode arrangement D20 also will produce voltage,
At this point, the switching between the normally closed pin 22 of relay and normally opened pin 23 can be also realized, to influence the accuracy of relay.
To prevent this from happening, as shown in figure 4, being equipped with lens or the interior encapsulating 4 of translucent numerical value and the plastics of black on holder 3
Outer encapsulating 5, wherein interior encapsulating 4 is wrapped in light emitting diode D10, photodiode arrangement D20, depletion type MOS tube M1 and enhancing
On type metal-oxide-semiconductor M2, plastics outer encapsulating 5 is then arranged outside encapsulating 4 inside.
The above is only the embodiment of the present invention, is not intended to limit the scope of the present invention, therefore every
According to the technical essence of the invention to any subtle modifications, equivalent variations and modifications made by above example, this is still fallen within
In the range of inventive technique scheme.
Claims (3)
1. a kind of conversion hysteria function relay, it is characterised in that：The relay include input, output end, light emitting diode,
Photodiode arrangement, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2；The input terminal includes that the defeated pin of anode and cathode are defeated
Enter pin；The output end includes common pin, normally closed pin and normally opened pin；
The positive input pin of anode connection of the light emitting diode, cathode connect cathode input pin；The photodiode
Array is close to light emitting diode, the grid of the anode connection depletion type MOS tube M1 of the photodiode arrangement, and depletion type
The drain electrode of metal-oxide-semiconductor M1 connects normally closed pin, and source electrode connects common pin；The grid connection photosensitive two of the enhanced metal-oxide-semiconductor M2
The drain electrode of the cathode of pole pipe array, enhanced metal-oxide-semiconductor M2 connects normally opened pin, and source electrode then connects common pin.
2. a kind of conversion hysteria function relay according to claim 1, it is characterised in that：The relay further includes branch
Frame, the light emitting diode, photodiode arrangement, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2 are integrally disposed in holder
On.
3. a kind of conversion hysteria function relay according to claim 2, it is characterised in that：The holder be equipped with lens or
The interior encapsulating of translucent numerical value and the plastics outer encapsulating of black, wherein interior to be wrapped in light emitting diode, photodiode battle array
On row, depletion type MOS tube M1 and enhanced metal-oxide-semiconductor M2, it is outer that encapsulating inside is then arranged in plastics outer encapsulating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810614214.6A CN108648958A (en) | 2018-06-14 | 2018-06-14 | A kind of conversion hysteria function relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810614214.6A CN108648958A (en) | 2018-06-14 | 2018-06-14 | A kind of conversion hysteria function relay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108648958A true CN108648958A (en) | 2018-10-12 |
Family
ID=63752629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810614214.6A Pending CN108648958A (en) | 2018-06-14 | 2018-06-14 | A kind of conversion hysteria function relay |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108648958A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103516343A (en) * | 2012-06-21 | 2014-01-15 | 贵州航天电器股份有限公司 | Solid state relay |
| CN104242883A (en) * | 2014-10-10 | 2014-12-24 | 厦门金欣荣电子科技有限公司 | Controlled solid state relay |
| CN205603680U (en) * | 2016-03-29 | 2016-09-28 | 合肥美的暖通设备有限公司 | Sacrificial anode consumes detection circuitry and air can water heater |
| CN205693645U (en) * | 2016-05-30 | 2016-11-16 | 深圳市元则电器有限公司 | Low energy consumption PhotoMOS relay |
| CN208256582U (en) * | 2018-06-14 | 2018-12-18 | 厦门市硅兆光电科技有限公司 | A kind of conversion hysteria function relay |
-
2018
- 2018-06-14 CN CN201810614214.6A patent/CN108648958A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103516343A (en) * | 2012-06-21 | 2014-01-15 | 贵州航天电器股份有限公司 | Solid state relay |
| CN104242883A (en) * | 2014-10-10 | 2014-12-24 | 厦门金欣荣电子科技有限公司 | Controlled solid state relay |
| CN205603680U (en) * | 2016-03-29 | 2016-09-28 | 合肥美的暖通设备有限公司 | Sacrificial anode consumes detection circuitry and air can water heater |
| CN205693645U (en) * | 2016-05-30 | 2016-11-16 | 深圳市元则电器有限公司 | Low energy consumption PhotoMOS relay |
| CN208256582U (en) * | 2018-06-14 | 2018-12-18 | 厦门市硅兆光电科技有限公司 | A kind of conversion hysteria function relay |
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