CN108641645A - A kind of encapsulating semiconductor packaging plastic and preparation method thereof - Google Patents
A kind of encapsulating semiconductor packaging plastic and preparation method thereof Download PDFInfo
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- CN108641645A CN108641645A CN201810272876.XA CN201810272876A CN108641645A CN 108641645 A CN108641645 A CN 108641645A CN 201810272876 A CN201810272876 A CN 201810272876A CN 108641645 A CN108641645 A CN 108641645A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention provides a kind of encapsulating semiconductor packaging plastics and preparation method thereof.The encapsulating semiconductor packaging plastic includes the raw material of following mass fraction：80~150 parts of composition epoxy resin；70~170 parts of curing agent；1~5 part of antifoaming agent；1~5 part of silane coupling agent；1800~2900 parts of inorganic filler；Wherein, the composition epoxy resin is that 1 ︰, 0.5~8 ︰ 0.5~8 are formed with mass ratio by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic ring structure epoxy resin；The inorganic filler is made of preparing spherical SiO 2 and carbon black；The maximum particle diameter of the preparing spherical SiO 2 is 25 μm, and average grain diameter is 7~15 μm.There is encapsulating semiconductor of the present invention packaging plastic mobility, viscosity to be less than 4 × 10 at normal temperatures5 cPs（25℃）, Tg be 140~180 DEG C, CTE α1It it is 8~15ppm/ DEG C, and Al Al shear strengths, up to 5MPa, good suitable for smaller size of encapsulation, cementability, the material after encapsulation is not easily stripped or defect.
Description
Technical field
The invention belongs to packaging plastic fields, more particularly, to a kind of encapsulating semiconductor packaging plastic and preparation method thereof.
Background technology
Wafer level fan-out package（FOWLP, Fan Out Wafer Level Package）Be occur in recent years it is advanced
Semiconductor packaging.FOWLP collection semiconductor fabrication, Electronic Encapsulating Technology, three-dimensional integration technology the whole body, to form one
Advanced, inexpensive, large scale wafer scale integration packaging technology.
Envelope is surveyed dealer and is pointed out, FOWLP encapsulation and the Fan In of existing WLP have larger otherness, in the system of wafer
Cheng Zhong pulls out required circuit to redistribution layer from the endpoint of semiconductor bare crystalline（Redistribution Layer）, in turn
Form encapsulation.Due to from sequentially reverse（From the roads Hou Daodaoqian）, determine in the controls such as precision, flatness, surface contamination
It is also one reverse to this technological requirement（From low to high）, this causes larger difficulty to the implementation of the processing step.To solve this
Problem, people have to front or post processing in the implementation of the step or the step（That is the patch of chip and insulating layer
Deposition and figure）Or even the spatial orientation of sequencing of the chip patch on FOWLP manufacturing process, chip active surface（Court
On, or downward）, on chip active surface the extension of pad and provide different solutions.It not only causes to be situated between chip in this way
Electric matter filling, cladding process implementation differ, and result in the difference on semiconductor devices FOWLP encapsulating structures；
But there is no need to encapsulating carrier plates on this basis, less use routing（Wire）And convex block（Bump）, and then it is minimized 30%
Production cost, and reduce chip thickness.
Existing FOWLP solutions are the sequence in chip patch, dielectric medium filling and covering material, dielectric medium filling
With method for coating, the spatial orientation etc. of chip active surface collocation on and it is different, form different FOWLP technologies.But its essence
All it is around how solving dielectric medium filling between chip, cladding problem.At this time just to be used for dielectric medium filling between chip,
More stringent requirements are proposed for the packaging plastic of cladding, needs lower viscosity, high Tg and lower linear expansion coefficient, and existing
Packaging plastic is difficult to meet this class wrapper requirement.
Invention content
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of encapsulating semiconductor packaging plastics.The present invention
It is more by selecting a variety of epoxy resin, adjusting the ratio between each epoxy resin and using the filler of specific particle size
Aspect improves the performance of fluid sealant simultaneously so that preparation-obtained packaging plastic has mobility, viscosity smaller simultaneously at normal temperatures
With good adhesion strength, it is applicable not only to the encapsulation of smaller szie material semiconductor, and the linear expansion coefficient of packaging plastic
Relatively low, more stable after packaging plastic thermosetting, encapsulation process is more convenient.
Another object of the present invention is to provide the preparation methods of above-mentioned encapsulating semiconductor packaging plastic.
The above-mentioned purpose of the present invention is achieved by following scheme：
A kind of encapsulating semiconductor packaging plastic, includes the raw material of following mass fraction：
80~150 parts of composition epoxy resin；
70~170 parts of curing agent；
1~5 part of antifoaming agent；
1~5 part of silane coupling agent；
1800~2900 parts of inorganic filler；
Wherein, the composition epoxy resin is by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic ring structure rings
Oxygen resin is that 1 ︰, 0.5~8 ︰ 0.5~8 are formed with mass ratio；The inorganic filler is made of preparing spherical SiO 2 and carbon black；It is described
The maximum particle diameter of preparing spherical SiO 2 is 25 μm, and average grain diameter is 7~15 μm.
Above-mentioned composition epoxy resin reduces composition epoxy resin by using a variety of epoxy resin of special ratios
Viscosity, be on the one hand to ensure packaging plastic mobility, be on the other hand to improve the Tg of packaging plastic.Meanwhile passing through
The silica for adding specific average grain diameter reduces the viscosity and CTE α 1 of packaging plastic, advantageously ensures that packaging plastic is in this way
With smaller deformation when different temperatures；And silica average grain diameter is selected as 7~15 μm, enables to silica in this way
Gap between particle is conducive to the circulation of composition epoxy resin in suitable range and limits its volume change.I.e.
Using above-mentioned specific raw material and ratio so that the fluid sealant of preparation has both mobility at normal temperatures, low viscosity and good
Adhesion strength.
Preferably, the encapsulating semiconductor packaging plastic, includes the raw material of following mass fraction：
90~140 parts of composition epoxy resin；
75~160 parts of curing agent；
1~3 part of antifoaming agent；
1~3 part of silane coupling agent；
2000~2900 parts of inorganic filler.
It is highly preferred that the encapsulating semiconductor packaging plastic, includes the raw material of following mass fraction：
90~120 parts of composition epoxy resin；
80~130 parts of curing agent；
1~3 part of antifoaming agent；
1~3 part of silane coupling agent；
2000~2300 parts of inorganic filler.
Preferably, the average grain diameter of the preparing spherical SiO 2 is 8~12 μm.
Preferably, the composition epoxy resin is by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic rings
Structural epoxy resins are that 1 ︰, 0.5~8 ︰ 0.5~8 are formed with mass ratio；The inorganic filler be preparing spherical SiO 2 and carbon black with
Mass ratio forms for 1 ︰ 0.003~0.03.
It is highly preferred that the composition epoxy resin is by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and Duo Fang
Ring structure epoxy resin is that 1 ︰, 0.5~3 ︰ 0.5~3 are formed with mass ratio；The inorganic filler is preparing spherical SiO 2 and carbon black
It is that 1 ︰ 0.008~0.02 is formed with mass ratio.
It is highly preferred that it with mass ratio is that 1 ︰ 0.008~0.02 is formed that the inorganic filler, which is preparing spherical SiO 2 and carbon black,.
Preferably, the bisphenol-A liquid epoxy resin be low-viscosity bisphenol A epoxide resin, as the trade mark be E44, E51,
E128, E828 or other similar to epoxy resin.It is highly preferred that the bisphenol-A liquid epoxy resin is E828.
Preferably, the cycloaliphatic epoxy resin is one kind in trade mark TTA3150,2021p, 2081,8010 or GT401
Or a variety of groups.It is highly preferred that cycloaliphatic epoxy resin is one or both of TTA3150 or 2021p.
Preferably, more aromatic ring structure epoxy resin are biphenyl type epoxy resin, naphthalene type epoxy resin or anthracene type ring oxygen
One or more compositions in resin.It is highly preferred that cycloaliphatic epoxy resin be NC-7300L or HP-4032D in one kind or
Two kinds.
Optimally, it with mass ratio is 27~40 that the curing agent, which is anhydride curing agent and latent curing agent,：1 composition, this
Sample is conducive to extend the storage time of encapsulating semiconductor packaging plastic and ensures its quality.
Optimally, the anhydride curing agent be methyl hexahydrophthalic anhydride, it is hexahydrophthalic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, sweet
Oily three esters（Such as trimellitic anhydride）Or it is one or more in tung oil acid anhydride.It is highly preferred that the anhydride curing agent is methyl
Hexahydrophthalic anhydride.
Preferably, the latent curing agent is one kind or more in PN-40,2E4MZ, MY-25, BDMA or DMP-30
Kind.It is highly preferred that the latent curing agent is one or both of 2E4MZ or PN-40.
Preferably, the antifoaming agent be BYK-019, BYK-A535, BYK-A530, KSZ-66 and KS-604 in one kind or
It is a variety of.It is highly preferred that the antifoaming agent is BYK-A530.
Preferably, the silane coupling agent is one in KBM-303, KBM-403, KBM-503, KBE-903 and KBM-603
Kind is a variety of.It is highly preferred that the silane coupling agent is KBM-403.
The present invention also protects the preparation method of the encapsulating semiconductor packaging plastic simultaneously, mainly includes the following steps that：
S1. above-mentioned formula ratio is pressed by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic ring structure epoxy resin
It is merged, obtains composition epoxy resin, cooling is spare；
S2. under conditions of temperature≤30 DEG C, the curing agent, antifoaming agent and silane that above-mentioned formula ratio is added into step S1 are even
Join agent and mixing, the inorganic filler for adding above-mentioned formula ratio is uniform, stores under freezing conditions and is used up to the encapsulating semiconductor
Packaging plastic.
The present invention's has the following advantages and beneficial effect：
Encapsulating semiconductor packaging plastic of the present invention, by using specific composition epoxy resin, curing agent and inorganic
Filler, and the usage ratio by controlling each raw material, many-sided performance for improving encapsulating semiconductor packaging plastic simultaneously；The present invention
There is the encapsulating semiconductor of preparation packaging plastic mobility, viscosity to be less than 1.8 × 10 at normal temperatures5 cPs（25℃）, it is applicable to
Smaller size of encapsulation and encapsulation process are more convenient；Tg is 140~180 DEG C, CTE（Thermal linear expansion coefficient）α1Value（<Tg）
It is 8~15ppm/ DEG C, CTE α2Value（>Tg）It is 30~50ppm/ DEG C, and there is good adhesion strength, Al-Al shear strengths can
Up to 5MPa so that is be bonded between semi-conducting material is more secured, more stable.
Specific embodiment
The content further illustrated the present invention with reference to specific embodiment, but should not be construed as limiting the invention.
Without departing from the spirit and substance of the case in the present invention, to simple modifications or substitutions made by the method for the present invention, step or condition,
It all belongs to the scope of the present invention；Unless otherwise specified, technological means used in embodiment is well known to those skilled in the art
Conventional means.
Embodiment 1
1, a kind of encapsulating semiconductor packaging plastic, is made of the raw material of following parts by weight：
80 parts of composition epoxy resin, by 20 parts of bisphenol-A liquid epoxy resin E828, cycloaliphatic epoxy resin TTA-3150
20 parts, 40 parts of mixing compositions of multi-aromatic ring resin NC-7300L；
70 parts of curing agent, by 67.5 parts of anhydride curing agent methyl hexahydrophthalic anhydride, 2.5 parts of compositions of latent curing agent 2E4MZ；
1 part of antifoaming agent selects BKY-A530；
5 parts of silane coupling agent selects KBM-403；
1800 parts of inorganic filler is made of 5.4 parts of 794.6 parts of silica 1 and carbon black 4A；Wherein, the grain size of silica is
5~20 μm, average grain diameter is 8 μm.
2, above-mentioned raw materials are prepared in accordance with the following methods：
（a）Above-mentioned 20 parts of E828,20 parts of TTA-3150 and 40 part of C-7300L are dissolved and are uniformly mixed, epoxy resin group is obtained
Close object；
（b）Under conditions of temperature≤30 DEG C, to step（a）In composition epoxy resin in be added 67.5 parts of methyl hexahydrobenzenes
Acid anhydride and 2.5 parts of 2E4MZ, 1 part of BKY-A530 and 5 part of KBM-403, and stir and evenly mix；Then 1794.6 parts of silica are added
With 5.4 parts of carbon black 4A, stir and evenly mix；Said mixture is finally subjected to vacuum packed, being placed in storage under freezing conditions can obtain
To the encapsulating semiconductor packaging plastic.
2~embodiment of embodiment 8
The formula such as the following table 1 for the encapsulating semiconductor packaging plastic that embodiment 2~8 provides, the preparation method is the same as that of Example 1.
The formula for the encapsulating semiconductor packaging plastic that 1 embodiment 2~8 of table provides（g）
Comparative example 1~7
The formula such as the following table 2 for the encapsulating semiconductor packaging plastic that comparative example 1~7 provides, the preparation method is the same as that of Example 1.
The formula for the encapsulating semiconductor packaging plastic that 2 comparative example 1~7 of table provides（g）
Performance test
（1）Viscosity
Using the DV-E type viscosimeters of BROOKFIELD companies, tested at 25 DEG C using needle-like rotor.Viscosity characterization half
The mobile performance of conductor fluid sealant, viscosity is smaller, and the mobile performance of fluid sealant is better, is applicable to small size semi-conducting material
Encapsulation.
（2）Tg and linear expansion coefficient
Cure before 120 DEG C, 10 minutes+150 DEG C, rear solidification in 60 minutes and solidfied material is made.It is measured with TMA methods obtained
The glass transition temperature and linear expansion coefficient of solidfied material.It is measured in the case where heating rate is by 3 DEG C/min of determination conditions
Value.Wherein Tg characterizes the stability after encapsulating semiconductor glue use, and Tg is bigger, indicates that encapsulating semiconductor glue uses rear stability energy
It is better, more resistant against high temperatures condition.Linear expansion coefficient（GTE α1With GTE α2）The temperature of characterization encapsulating semiconductor glue often changes
At 1 DEG C, the variation of length and its length ratio at 0 DEG C.
（3）The shear strength of Al-Al
According to《Adhesive tensile shear strength assay method GB 7124-86》It is tested.The shear strength characterization half of Al-Al
Adhesive property after conductor fluid sealant use, the shear strength of Al-Al is bigger, indicates the cementability after encapsulating semiconductor glue use
Better, the material of encapsulation does not allow easily peelable or defect.
The performance of the encapsulating semiconductor packaging plastic prepared in detection Examples 1 to 8 and comparative example 1~8, test result are shown in
Table 3.
The performance parameter of the encapsulating semiconductor packaging plastic of 3 Examples 1 to 8 of table and comparative example 1~7
As can be known from Table 3, the viscosity for the encapsulating semiconductor packaging plastic that prepared by Examples 1 to 8 is relatively low, respectively less than 1.8 ×
105The viscosity of encapsulating semiconductor packaging plastic prepared by cPs, wherein embodiment 5 and 6 is minimum, is 1.4 × 105CPs shows it
With good mobile performance；In addition, linear expansion coefficient CTE α1It it is 8~15ppm/ DEG C, what wherein prepared by embodiment 5 partly leads
The CTE α of body sealing packaging plastic1It is optimal, it is 8 ppm/ DEG C；And Al-Al shear strengths show the present invention up to 5MPa or more
The encapsulating semiconductor has good adhesion strength with packaging plastic.
And the higher bisphenol A epoxide resin usage amount of epoxy resin medium viscosity used in comparative example 1~3 is more, and it is each
Not within the scope of the present invention, especially comparative example 3 has only used bisphenol A epoxide resin to the ratio of epoxy resin, leads to half prepared
Conductor sealing is higher with encapsulation adhesiveness, and mobility is low, and Al-Al shear strengths are not high, and cohesive force is weak, influences the trust after encapsulation
Property test；The dosage of 4 epoxy resin of comparative example is very little, causes the bonding force of encapsulating semiconductor packaging plastic inadequate；Comparative example 5
When the dosage of epoxy resin is excessive, cause the viscosity of encapsulating semiconductor packaging plastic excessively high, mobility reduces, linear expansion system
Number is excessive；The average grain diameter of silica in comparative example 6 because of use is too small, although the viscosity influence to packaging plastic is little,
Be its Al-Al shear strength it is smaller；Comparative example 7 leads to encapsulating semiconductor because the average grain diameter of the silica of use is excessive
It is too small with the viscosity of packaging plastic, influence the viscosity effect of packaging plastic.
As it can be seen that ensure that performance all has good performance to encapsulating semiconductor in all respects with packaging plastic, needs to protect simultaneously
The dosage of the type and usage ratio, the type of curing agent and usage ratio and the type of inorganic filler of card epoxy resin used
Ratio is in range of the present invention.When a certain raw material type is different or usage ratio is not in range of the present invention, then
A certain performance or the reduction of multiple performance for easily leading to encapsulating semiconductor packaging plastic, cannot be satisfied encapsulating semiconductor packaging plastic
Requirement during production application.
Claims (10)
1. a kind of encapsulating semiconductor packaging plastic, includes the raw material of following mass fraction：
80~150 parts of composition epoxy resin；
70~170 parts of curing agent；
1~5 part of antifoaming agent；
1~5 part of silane coupling agent；
1800~2900 parts of inorganic filler；
Wherein, the composition epoxy resin is by bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic ring structure rings
Oxygen resin is that 1 ︰, 0.5~8 ︰ 0.5~8 are formed with mass ratio；The inorganic filler is made of preparing spherical SiO 2 and carbon black；It is described
The maximum particle diameter of preparing spherical SiO 2 is 25 μm, and average grain diameter is 7~15 μm.
2. encapsulating semiconductor packaging plastic according to claim 1, which is characterized in that include the raw material of following mass fraction：
90~140 parts of composition epoxy resin；
75~160 parts of curing agent；
1~3 part of antifoaming agent；
1~3 part of silane coupling agent；
2000~2900 parts of inorganic filler.
3. encapsulating semiconductor packaging plastic according to claim 2, which is characterized in that include the raw material of following mass fraction：
90~120 parts of composition epoxy resin；
80~130 parts of curing agent；
1~3 part of antifoaming agent；
1~3 part of silane coupling agent；
2000~2300 parts of inorganic filler.
4. encapsulating semiconductor packaging plastic according to claim 1, which is characterized in that the average grain of the preparing spherical SiO 2
Diameter is 8~12 μm.
5. encapsulating semiconductor packaging plastic according to claim 1, which is characterized in that the composition epoxy resin is by bis-phenol
A types liquid epoxies, cycloaliphatic epoxy resin and more aromatic ring structure epoxy resin are with mass ratio for 0.5~5 group of 1 ︰, 0.5~5 ︰
At；It with mass ratio is that 1 ︰ 0.003~0.03 is formed that the inorganic filler, which is preparing spherical SiO 2 and carbon black,.
6. encapsulating semiconductor packaging plastic according to claim 5, which is characterized in that the composition epoxy resin is by bis-phenol
A types liquid epoxies, cycloaliphatic epoxy resin and more aromatic ring structure epoxy resin are with mass ratio for 0.5~3 group of 1 ︰, 0.5~3 ︰
At；It with mass ratio is that 1 ︰ 0.003~0.02 is formed that the inorganic filler, which is preparing spherical SiO 2 and carbon black,.
7. according to any encapsulating semiconductor packaging plastic of claim 1~6, which is characterized in that the bisphenol-A liquid ring
Oxygen resin is E44, E51, E128 or E828；The cycloaliphatic epoxy resin is TTA3150,2021p, 2081,8010 or GT401
In one or more compositions；More aromatic ring structure epoxy resin are biphenyl type epoxy resin, naphthalene type epoxy resin or anthracene type
One or more compositions in epoxy resin.
8. according to any encapsulating semiconductor packaging plastic of claim 1~6, which is characterized in that the curing agent is acid anhydrides
Curing agent and latent curing agent are with mass ratio for 27~40：1 composition.
9. encapsulating semiconductor packaging plastic according to claim 8, which is characterized in that the anhydride curing agent is methyl hexahydro
Phthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, triglycerides（Such as trimellitic anhydride）Or one in tung oil acid anhydride
Kind is a variety of；The latent curing agent is one or more in PN-40,2E4MZ, MY-25, BDMA or DMP-30.
10. the preparation method of any encapsulating semiconductor packaging plastic of claim 1~6, which is characterized in that it is main include with
Lower step：
S1. bisphenol-A liquid epoxy resin, cycloaliphatic epoxy resin and more aromatic ring structure epoxy resin are merged, is obtained
Composition epoxy resin, cooling are spare；
S2. under conditions of temperature≤30 DEG C, curing agent, antifoaming agent and the silane that selected formula ratio is added into step S1 are even
Join agent and mixing, add the inorganic filler mixing of formula ratio, stores under freezing conditions and encapsulated up to the encapsulating semiconductor
Glue.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109280522A (en) * | 2018-10-17 | 2019-01-29 | 东莞市沅邦电子材料有限公司 | Fire resistant epoxy sealant |
| CN110845825A (en) * | 2019-10-22 | 2020-02-28 | 艾森半导体材料(南通)有限公司 | Nano-silica modified epoxy resin composition for LED packaging |
| CN111684010A (en) * | 2018-12-06 | 2020-09-18 | 浙江华飞电子基材有限公司 | Liquid casting resin composition for ultrahigh-voltage device |
| CN112530787A (en) * | 2019-09-18 | 2021-03-19 | 三赢科技（深圳）有限公司 | Method for removing colloid |
| CN113122170A (en) * | 2019-12-31 | 2021-07-16 | 苏州科络达信息科技有限公司 | Adhesive for sealing semiconductor |
| CN113122172A (en) * | 2020-12-26 | 2021-07-16 | 深圳市荣昌科技有限公司 | Underfill adhesive suitable for packaging 5G equipment chip and preparation method thereof |
| CN113652188A (en) * | 2021-09-24 | 2021-11-16 | 苏州艾迪亨斯新材料科技有限公司 | Single-component thermosetting packaging adhesive and preparation method thereof |
| CN116083018A (en) * | 2022-12-30 | 2023-05-09 | 广东粤港澳大湾区黄埔材料研究院 | QFN packaging material, preparation method and application thereof |
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