CN108640081B - A kind of preparation method of micro-structure - Google Patents
A kind of preparation method of micro-structure Download PDFInfo
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- CN108640081B CN108640081B CN201810424106.2A CN201810424106A CN108640081B CN 108640081 B CN108640081 B CN 108640081B CN 201810424106 A CN201810424106 A CN 201810424106A CN 108640081 B CN108640081 B CN 108640081B
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- micro
- hydrogen
- layer
- rich materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
Abstract
The present invention provides a kind of preparation methods of micro-structure, the graphic structure formed by using hydrogen-rich materials is as the mould for forming device architecture, and it is heated by microwave or laser, so that the microstructures demo Id that dimethyl silicone polymer is formed becomes easy, the micro-structure of formation is complete, and reaches higher surface quality by surface modification.
Description
Technical field
The present invention relates to micro-nano device preparation fields, and in particular to a kind of preparation method of micro-structure.
Background technique
Micro-structure process is prepared in the prior art, is difficult to carry out micro-structure simply completely in knockout course, and right
The modified surface quality that improves in surface is also carried out in dimethyl silicone polymer to become difficult.
Summary of the invention
Based on solving the above problems, the present invention provides a kind of preparation methods of micro-structure, which comprises step 1)
Substrate is selected, the substrate is glass, silicon wafer, SOI, sapphire；Step 2) deposits one layer of hydrogen-rich materials over the substrate；Step
It is rapid that a layer photoresist layer 3) is deposited on the hydrogen-rich materials；Step 4) forms photoetching offset plate figure exposure mask；Step 5) etching institute
Hydrogen-rich materials are stated, figure is formed；Step 6) forms dimethyl silicone polymer on the figure；Step 7) is to polydimethylsiloxanes
Alkane is solidified, and device architecture is formed；Step 8) heats the hydrogen-rich materials, and hydrogen-rich materials is made to release gas, makes
The device architecture formed by dimethyl silicone polymer is separated from the hydrogen-rich materials, forms the upper layer micro-structure of device；
Step 9) is roughened the upper layer micro-structure of device after release, forms micro- knot with the surface of certain roughness
Structure；Step 10) carries out silicic acid anhydride to the micro-structure surface on the surface with certain roughness；Step 11) is to installation substrate
The bonding face that will be bonded with micro-structure carries out surface-hydrophobicized processing；Step 12) is by described with certain roughness
The micro-structure on surface is bonded with installation substrate, forms micro element.
The present invention also provides a kind of micro-structures that the preparation method by micro-structure proposed by the present invention is prepared.
According to an embodiment of the invention, the hydrogen-rich materials are hydrogenated silicon carbide, hydrogenated silicon oxide or hydrogenated silicon nitride.
According to an embodiment of the invention, the heating means of the hydrogen-rich materials are that microwave heating or laser heat.
According to an embodiment of the invention, the method that the upper layer micro-structure of device is roughened after described pair of release is
Plasma roughening.
According to an embodiment of the invention, the silicic acid anhydride is to form the surface of one layer of hydrophobic performance on surface processed
Modified layer.
According to an embodiment of the invention, the surface reforming layer is fluorocarbon, the carbon of the surface reforming layer is fluorinated
Object is closed to be formed by flowability chemical vapor deposition.
Advantages of the present invention is as follows:
(1) reverse mould of the etching micro-structure easy to form to hydrogen-rich materials can be passed through；
(2) micro-structure prepared can be easy to separate from hydrogen-rich materials；
(3) performance of device can be improved to the modification of micro-structure surface.
Detailed description of the invention
Fig. 1 is the preparation method process flow chart of micro-structure.
Specific embodiment
First embodiment
Referring to Fig. 1, the preparation method of micro-structure of the invention, which is characterized in that the described method includes: step 1) selection lining
Bottom 1, the substrate 1 are glass, silicon wafer, SOI, sapphire；Step 2) deposits one layer of hydrogen-rich materials 2 on the substrate 1, described
Hydrogen-rich materials are hydrogenated silicon carbide, hydrogenated silicon oxide or hydrogenated silicon nitride, and the stoichiometric ratio of hydrogen is greater than 10%, is less than
30%；Step 3) deposits a layer photoresist layer (not shown) on the hydrogen-rich materials；Step 4) forms photoetching offset plate figure and covers
Film；Step 5) etches the hydrogen-rich materials, forms figure 3, and the lithographic method is dry etching；Step 6) is in the figure 3
Upper formation dimethyl silicone polymer 4；Step 7) solidifies dimethyl silicone polymer, forms device architecture, described to be cured as
Photocuring, heat cure or photo-thermal curing, and to improve solidification effect, coupling agent is added in the dimethyl silicone polymer；
Step 8) heats the hydrogen-rich materials, and hydrogen-rich materials is made to release gas, and the heating means of hydrogen-rich materials add for microwave
Heat or laser heating, separate the device architecture formed by dimethyl silicone polymer from the hydrogen-rich materials, shaper
The upper layer micro-structure of part；Step 9) is roughened the upper layer micro-structure 4 of device after release, to after release device it is upper
The method that layer micro-structure is roughened is plasma roughening, forms the micro-structure with the surface of certain roughness；
Step 10) is modified to the micro-structure surface on the surface with certain roughness, carries out silicic acid anhydride, and silicic acid anhydride is in quilt
Handle the surface reforming layer that surface forms one layer of hydrophobic performance；Step 11) will be bonded installation substrate with micro-structure
Bonding face carries out surface-hydrophobicized processing, and silicic acid anhydride is that the surface for forming one layer of hydrophobic performance on surface processed is modified
Layer；The micro-structure 4 ' on the surface with certain roughness is bonded by step 12) with installation substrate 5, forms micro element.
Wherein, the surface reforming layer is fluorocarbon, and is formed by flowability chemical vapor deposition.
Second embodiment
The preparation method of micro-structure according to first embodiment and the micro structural component prepared, the portion as microbody chip
Part.
Finally, it should be noted that obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Other various forms of variations or variation out.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (7)
1. a kind of preparation method of micro-structure, which is characterized in that the described method includes: step 1) selects substrate, the substrate is
Glass, silicon wafer, SOI, sapphire；Step 2) deposits one layer of hydrogen-rich materials over the substrate；Step 3) is in the hydrogen-rich materials
One layer photoresist layer of upper deposition；Step 4) forms photoetching offset plate figure exposure mask；Step 5) etches the hydrogen-rich materials, forms figure
Shape；Step 6) forms dimethyl silicone polymer on the figure；Step 7) solidifies dimethyl silicone polymer, shaper
Part structure；Step 8) heats the hydrogen-rich materials, and hydrogen-rich materials is made to release gas, makes described by polydimethylsiloxanes
The device architecture that alkane is formed is separated from the hydrogen-rich materials, forms the upper layer micro-structure of device；Step 9) is to device after release
Upper layer micro-structure be roughened, formed have certain roughness surface micro-structure；Step 10) is certain to having
The micro-structure surface on the surface of roughness carries out silicic acid anhydride；Step 11) will be bonded installation substrate with micro-structure
Bonding face carry out surface-hydrophobicized processing；Step 12) serves as a contrast the micro-structure on the surface with certain roughness and installation
Bottom is bonded, and micro element is formed.
2. the preparation method of micro-structure according to claim 1, which is characterized in that the hydrogen-rich materials are hydrogenated
Silicon, hydrogenated silicon oxide or hydrogenated silicon nitride.
3. the preparation method of micro-structure according to claim 1, it is characterised in that: the heating means of the hydrogen-rich materials are
Microwave heating or laser heating.
4. the preparation method of micro-structure according to claim 1 or 2, it is characterised in that: device is upper after described pair of release
The method that layer micro-structure is roughened is plasma roughening.
5. the preparation method of micro-structure according to claim 1 or 2, it is characterised in that: the silicic acid anhydride is in quilt
Handle the surface reforming layer that surface forms one layer of hydrophobic performance.
6. the preparation method of micro-structure according to claim 5, it is characterised in that: the surface reforming layer is that carbon fluorination is closed
Object.
7. the preparation method of micro-structure according to claim 6, it is characterised in that: the carbon of the surface reforming layer, which is fluorinated, to be closed
Object is formed by flowability chemical vapor deposition.
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| CN201810424106.2A CN108640081B (en) | 2018-05-07 | 2018-05-07 | A kind of preparation method of micro-structure |
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| CN201810424106.2A CN108640081B (en) | 2018-05-07 | 2018-05-07 | A kind of preparation method of micro-structure |
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| CN108640081B true CN108640081B (en) | 2019-11-12 |
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| CN112299363B (en) * | 2020-09-29 | 2024-03-19 | 江苏大学 | Preparation method of smooth inclined bottom surface microstructure array surface based on air die method |
| CN116968224B (en) * | 2023-09-22 | 2023-12-08 | 江苏中科智芯集成科技有限公司 | Preparation method of fan-out type packaging chip |
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| NO311797B1 (en) * | 1999-05-12 | 2002-01-28 | Thin Film Electronics Asa | Methods for patterning polymer films and using the methods |
| JP2003242695A (en) * | 2002-02-12 | 2003-08-29 | Ricoh Co Ltd | Method of manufacturing master disk for optical disk, method of manufacturing stamper for optical disk, stamper for optical disk, and method of manufacturing molded resin for optical disk, and molded substrate for optical disk |
| CN1307486C (en) * | 2004-12-20 | 2007-03-28 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
| JP2007030212A (en) * | 2005-07-22 | 2007-02-08 | Ricoh Co Ltd | Manufacturing method of stamper for molding plastic |
| CN100585491C (en) * | 2007-08-07 | 2010-01-27 | 山东大学 | Large area periodic array three-dimensional microstructure preparation method |
| CN101143699A (en) * | 2007-11-08 | 2008-03-19 | 上海交通大学 | Universal film material graphics method |
| CN101613076B (en) * | 2009-07-20 | 2011-08-10 | 河海大学常州校区 | Method for preparing and duplicating three-dimensional micro-nano structure stamps in batches |
| JP5647829B2 (en) * | 2010-07-30 | 2015-01-07 | Ａｇｃセイミケミカル株式会社 | Photocurable composition and method for producing molded article having fine pattern on surface |
| CN103107083B (en) * | 2012-06-28 | 2015-07-08 | 中山大学 | Function coating imaging-self method of polydimethylsiloxane three-dimensional structure |
| JPWO2014084030A1 (en) * | 2012-11-27 | 2017-01-05 | 株式会社ダイセル | Method for producing fine structure and photocurable composition for nanoimprint |
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Effective date of registration: 20191021 Address after: No.12, Jinji Road, Jiangcun village, Letan Town, Wuyi County, Jinhua City, 321000 Zhejiang Province Applicant after: Xu Xiao Nv Address before: No. 1701 Binhe Road, Suzhou High-tech Zone, Suzhou City, Jiangsu Province Applicant before: Suzhou Bao Lan environmental protection & Technology Co., Ltd. |
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Effective date of registration: 20201208 Address after: No.88 Gangcheng Avenue, Dongtai coastal economic zone, Dongtai City, Yancheng City, Jiangsu Province 224200 Patentee after: Dongtai Haibin science and Technology Pioneer Park Management Co., Ltd Address before: No.12, Jinji Road, Jiangcun village, Letan Town, Wuyi County, Jinhua City, 321000 Zhejiang Province Patentee before: Xu Xiaonv |
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