CN108598146A - High frequency tunneling device based on single-root carbon nano-tube and preparation method thereof - Google Patents
High frequency tunneling device based on single-root carbon nano-tube and preparation method thereof Download PDFInfo
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- CN108598146A CN108598146A CN201810233847.2A CN201810233847A CN108598146A CN 108598146 A CN108598146 A CN 108598146A CN 201810233847 A CN201810233847 A CN 201810233847A CN 108598146 A CN108598146 A CN 108598146A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 118
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 105
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 105
- 230000005641 tunneling Effects 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 74
- 239000002086 nanomaterial Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 27
- 239000010931 gold Substances 0.000 claims description 27
- 238000010894 electron beam technology Methods 0.000 claims description 24
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- 239000007769 metal material Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005566 electron beam evaporation Methods 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000002109 single walled nanotube Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
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- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000002079 double walled nanotube Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000002048 multi walled nanotube Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
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- 238000005516 engineering process Methods 0.000 abstract description 4
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- -1 substrate Chemical compound 0.000 abstract 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- 238000007906 compression Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6603—Diodes
Abstract
The present invention provides a kind of high frequency tunneling device based on single-root carbon nano-tube, including substrate, dielectric layer, single-root carbon nano-tube, metal Nano structure and the anode and cathode metal layer that set gradually from bottom to top；The carbon nanotube and anode have certain nano gap, so that device of the present invention has rectifying effect, simultaneously because the diameter very little of carbon nanotube, the gap of carbon nanotube and anode is small, a capacitor with very little capacitance can be formed between the single-root carbon nano-tube and anode, so that the capacitance very little of device, it can work under high frequency condition, and can theoretically work under the conditions of optical frequency, compared with the existing technology in resonance tunnel-through diode theoretically highest working frequency only have 1.5~2.5THz have significant improvement.
Description
Technical field
The present invention relates to high frequency transistor technical field, more particularly to a kind of high frequency tunnelling device based on single-root carbon nano-tube
Part and preparation method thereof.
Background technology
Transistor, which emerges, promotes the birth of integrated circuit.With the continuous development of integrated circuit, semiconductor transistor
Two different directions of development direction：First, the size of transistor is reduced, second is that improving the high frequency performance of transistor.Experiment at present
The working frequency of transistor is up to 100GHz or more in room.
Tunneling transistor is a kind of novel high speed device constituted using quantum tunneling effect.Tunneling device is nanoelectronic
One of important member in device family, compared to other nano-devices (such as single-electron device and quantum dot device), tunnelling
Device it is developing faster, more ripe, and initially entered the application stage.Tunneling device has high frequency, high speed operation, low work electricity
The features such as pressure and low-power consumption.By taking resonance tunnel-through diode (RTD) as an example, since tunneling mechanism is high-speed physical mechanism, RTD is intrinsic
Capacitance is small, and device active region is very short, therefore determines that it has very fast speed and very high working efficiency.It is theoretically pre-
It counts conversion frequencies of the RTD from peak value to valley and can reach 1.5~2.5THz, the maximum frequency of oscillation of actually RTD devices has reached
To 712GHz, switch time of RTD is down to 1.5ps.
Carbon nanotube is considered as a kind of one-dimensional tubular nanometer material made of being crimped by graphite linings.Due to having between atom
Very strong bonding mode and special atomic arrangement structure, carbon nanotube are all demonstrated by all various aspects such as power, heat, light, electricity
Very excellent property and wide application prospect.
Therefore, it is necessary to one kind having rectifying effect, the height based on single-root carbon nano-tube that can be worked under high frequency condition
Frequency tunneling device.
Invention content
In order to solve the above technical problem, the present invention provides a kind of high frequency tunneling device based on single-root carbon nano-tube, packet
Include the substrate set gradually from bottom to top, dielectric layer, single-root carbon nano-tube, metal Nano structure and anode and cathodic metal
Layer；Over the substrate, the single-root carbon nano-tube deposits on said dielectric layer the dielectric deposition, the metal
Nanostructure is arranged above single-root carbon nano-tube；The metal Nano structure by metal lead electrode respectively with anode and the moon
The connection of pole metal layer, wherein one end of the single-root carbon nano-tube and the metal Nano structure connected with anode have it is certain between
Away from.
Preferably, the dielectric layer uses the insulating materials of various high-ks, including but not limited to following material：
Diamond、SiO2、Al2O3、HfO2、Y2O3、La2O3、TiO2、ZrO2、Ta2O5、SiC、Si3N4, diamond-like materials (DLC)；
It is highly preferred that the thickness range of the dielectric layer is 10nm-2000nm.
Preferably, the single-root carbon nano-tube is single-walled carbon nanotube, double-walled carbon nano-tube or multi-walled carbon nanotube.It is described
The length of single-root carbon nano-tube is 1nm-100um.
Preferably, the spacing between one end and anode of the single-root carbon nano-tube is 1nm-1um.Wherein, the metal
Nanostructure is to press on the carbon nanotubes, and single-root carbon nano-tube is connected with metal Nano structure, but due to single-root carbon nano-tube
It is very thin, much smaller than the thickness of gold, so not influencing the connection between metal Nano structure and anode.
Preferably, the material of the metal Nano structure includes but not limited to following metal：Gold, silver, copper, iron, aluminium, nickel,
Cobalt, platinum, chromium, titanium.
The lateral section of the metal Nano structure is the geometric figure of various rules, preferably circular, oval, triangle
The polygonized structures such as shape, rectangle, square, regular hexagon structure,
Preferably, the geomery for the metal Nano structure connected respectively with anode and cathode can be not exclusively.The metal
The size of nanostructure is 20nm-100um, and the spacing of thickness range 5nm-100um, metal Nano structure are 1nm-
100um。
According to another aspect of the present invention, the present invention also provides a kind of high frequency tunneling device based on single-root carbon nano-tube
Preparation method includes the following steps：
Step 1：Select substrate material；
Step 2：Dielectric layer is prepared, electron beam evaporation plating, atomic layer deposition, magnetron sputtering, molecular beam epitaxy or change are utilized
It learns the membrane deposition methods such as vapor deposition and prepares dielectric layer over the substrate, as insulating layer；
Step 3：Marker graphic is made, label is made on said dielectric layer using ultraviolet photolithographic or electron beam exposure
Figure, in conjunction with the membrane deposition methods deposited metal material such as electron beam evaporation plating, hot evaporation or magnetron sputtering.
The specific steps are：First in dielectric layer surface spin coating last layer electron beam adhesive or photoresist, pass through electron beam exposure
Or the graphic array of ultraviolet photolithographic exposure label, then graphics field is obtained by development, then steamed by electron beam evaporation plating, heat
The upper metal material of the membrane deposition methods deposition such as plating or magnetron sputtering is finally washed away with acetone and isopropanol and is sunk above glue and glue
Long-pending metal material leaves the metal material in marker graphic region.
Preferably, use electron beam exposure legal system to mark glue that figure uses is PMMA；It is made and is marked of ultraviolet photolithographic
The glue that note figure uses is not limited only to both glue for S1897.
Preferably, the marker graphic is in periodic arrangement, can be square or " ten " font；Material is metal, can be excellent
It is selected as gold, tungsten；Thickness is 40nm-1um.
Step 4：Growth single-root carbon nano-tube simultaneously shifts single-root carbon nano-tube：It is grown by chemical vapour deposition technique single
Carbon nanotube, and the dielectric for including marker graphic prepared by the single-root carbon nano-tube split-up to grow out to step 3
On layer；
Step 5：Metal Nano structure and anode and cathode are made, electron beam exposure combination electron beam evaporation plating, hot evaporation are utilized
Or the membrane deposition methods such as magnetron sputtering, metal Nano structure and anode and cathode are prepared on single-root carbon nano-tube；
Preferably, marker graphic described in step 3 is in order to which used in alignment in step 5, step 2 is exposed using electron beam
Light or ultraviolet photolithographic make the figure marked, and leave the metal material of marker graphic, and then step 5 is according to step 3
In marker graphic carbon nanotube is positioned, obtain metal Nano structure using electron beam exposure again.
The specific steps are：In dielectric surface spin coating last layer PMMA glue, then pass through the alignment work in electron beam exposure
Skill positions single-root carbon nano-tube using the marker graphic in step 3 so that the region energy of metal Nano structure part
It is directly exposed on above single-root carbon nano-tube, the graphics field of device of the present invention is obtained by development, then pass through electron beam
The upper metal material of the membrane deposition methods deposition such as vapor deposition, hot evaporation or magnetron sputtering, finally with acetone and isopropanol wash away glue with
And the metal material that glue deposits above, leave the metal material of device architecture part.
Wherein, the metal Nano structure is on single-root carbon nano-tube.Single-root carbon nano-tube is positioned to
Allow second of electron beam exposure when, the region of metal Nano structure can be directly exposed on the position of carbon nanotube so that last
The gold nano structure obtained after deposited metal material presses against above carbon nanotube.
Wherein, the metal material finally deposited includes anodic-cathodic, lead electrode and gold nano structure, is second
Secondary electron beam exposure is once completed.
Step 6：The intersection of single-root carbon nano-tube one end and anode is cut using focused ion beam.
Preferably, the spacing of described single-root carbon nano-tube one end and anode is 1nm-1um, i.e., the described single-root carbon nano-tube
Spacing between one end and the metal Nano structure connected with anode is 1nm-1um.Again due to single diameter of single-wall carbon nano tube
Very little, only several nanometers can form a capacitor with very little capacitance, reason between the single-root carbon nano-tube and anode
By can above work under the conditions of optical frequency.
The present invention provides a kind of high frequency tunneling device based on single-root carbon nano-tube, and the carbon nanotube and anode have one
Determine nano gap so that device of the present invention has rectifying effect, simultaneously because the diameter very little of carbon nanotube, carbon nanotube
It is small with the gap of anode, a capacitor with very little capacitance can be formed between the single-root carbon nano-tube and anode, made
The capacitance very little for obtaining device, can work, and theoretically can be in optical frequency condition under high frequency condition (more than THz magnitudes)
Work under (100THz even to PHz), compared with the existing technology in resonance tunnel-through diode theoretically highest working frequency
Only 1.5~2.5THz has significant improvement.
It should be appreciated that aforementioned description substantially and follow-up description in detail are exemplary illustration and explanation, it should not
As the limitation to the claimed content of the present invention.
Description of the drawings
With reference to the attached drawing of accompanying, the more purposes of the present invention, function and advantage are by the as follows of embodiment through the invention
Description is illustrated, wherein：
Fig. 1 shows a kind of longitudinal profile schematic diagram of high frequency tunneling device based on single-root carbon nano-tube of the present invention.
Fig. 2 shows a kind of metal Nano structure of the high frequency tunneling device based on single-root carbon nano-tube of the present invention and
The schematic diagram of its structure constituted with single-root carbon nano-tube.
Fig. 3 shows a kind of horizontal section schematic diagram of high frequency tunneling device based on single-root carbon nano-tube of the present invention.
Fig. 4 shows a kind of preparation method flow signal of high frequency tunneling device based on single-root carbon nano-tube of the present invention
Figure.
Fig. 5 shows the shape knot of marker graphic on a kind of high frequency tunneling device based on single-root carbon nano-tube of the present invention
Structure schematic diagram.
Fig. 6 shows a kind of SEM image of high frequency tunneling device specific example based on single-root carbon nano-tube of the present invention.
Fig. 7 a-7b show the institute in step 6 before and after cut-out carbon nanotube in the preparation method of the device of the present invention
State connection and the electric conductivity comparison diagram of device.
Fig. 8 shows a kind of light field driving carbon nanotube of high frequency tunneling device based on single-root carbon nano-tube of the present invention
The longitudinal profile schematic diagram of electron emission.
Specific implementation mode
By reference to exemplary embodiment, the purpose of the present invention and function and the side for realizing these purposes and function
Method will be illustrated.However, the present invention is not limited to exemplary embodiment as disclosed below；Can by different form come
It is realized.The essence of specification is only to aid in the detail of the various equivalent modifications Integrated Understanding present invention.
Hereinafter, the embodiment of the present invention will be described with reference to the drawings.In the accompanying drawings, identical reference numeral represents identical
Or similar component or same or like step.
Embodiment 1
Referring to Fig. 1, the present invention provides a kind of high frequency tunneling device based on single-root carbon nano-tube, including from bottom to top successively
Substrate 101, dielectric layer 102, single-root carbon nano-tube 103, metal Nano structure 105 and anode 104a and the cathode gold of setting
Belong to layer 104b；The dielectric layer 102 is deposited on the substrate 101, and the single-root carbon nano-tube 103 is deposited on the electricity and is situated between
On matter layer 102, the metal Nano structure 105 is arranged above single-root carbon nano-tube；The metal Nano structure 105 passes through gold
Belong to lead electrode be connected to respectively with anode 104a and cathode metal layer 104b, wherein one end of the single-root carbon nano-tube 103 with
The metal Nano structure tool connected with anode 104a is at regular intervals.
Specifically, the substrate 101 is silicon chip, and the single-root carbon nano-tube 103 is single-walled carbon nanotube, the single carbon
Spacing between one end and anode 104a of nanotube 103 is 10nm, and the material of the metal Nano structure 105 is gold.
Further, according to the preferred embodiment of the present embodiment, the lateral section of the metal Nano structure 105 can be circle
The polygonized structures such as shape, ellipse, triangle, rectangle, square, regular hexagon structure, two metal Nano structures should not
Ask geomery just the same, i.e., the geomery for the metal Nano structure connected respectively with anode and cathode can not exclusively, such as
Shown in Fig. 2 b.The lateral dimension size of these structures is 20nm-100um, thickness range 5nm-100um.
Referring to Fig. 2 a, 2b, 2c, the metal Nano structure is the square of a pair of 300nm*300nm, a pair of of circle or
A pair of of triangle, wherein gold nano structure spacing is 500nm.Specifically, by taking Fig. 2 a as an example, 105a and 105b is the metal
Nanostructure, 103 be single-root carbon nano-tube, wherein the metal Nano structure 105b is connected with cathode 104b, and is pressed in single
Above carbon nanotube 103；Another metal Nano structure 105a is connected with anode 104a, while single-root carbon nano-tube 103 and metal
The have certain gap, interstice coverage of nanostructure 105a is 1nm-1um.
It is a kind of horizontal section schematic diagram of high frequency tunneling device based on single-root carbon nano-tube of the present invention referring to Fig. 3,
The device is made of cathode 104b and anode 104a, lead electrode and gold nano structure 105, the metal Nano structure
105 are connected to anode 104a and cathode metal layer 104b respectively by metal lead electrode, wherein the single-root carbon nano-tube
103 one end and the metal Nano structure connected with anode 104a have at regular intervals.The spacing makes device of the present invention
Part has rectifying effect, simultaneously because the gap of the diameter very little of carbon nanotube, carbon nanotube and anode is small, the single carbon is received
A capacitor with very little capacitance can be formed between mitron and anode so that the capacitance very little of device, it can be in high frequency
Under the conditions of work, and can theoretically work under the conditions of optical frequency.
Embodiment 2
Referring to Fig. 4, the preparation method of the present invention also provides a kind of high frequency tunneling device based on single-root carbon nano-tube, including
Following steps：
In step 1, the substrate material is silicon, and is cut to the square piece of 1cm*1cm sizes；
In step 2, dielectric layer is prepared using electron beam evaporation plating, atomic layer deposition, magnetron sputtering, molecular beam epitaxy
Or the method for chemical vapor deposition prepares dielectric layer over the substrate, as insulating layer；
In step 3, making marker graphic is made on said dielectric layer using ultraviolet photolithographic or electron beam exposure
Marker graphic steams upper 60nm gold in conjunction with electron beam evaporation plating.
The specific steps are：First in dielectric layer surface spin coating last layer PMMA glue, the figure marked by electron beam exposure
Array, then graphics field is obtained by development, upper gold is then steamed by the methods of electron beam evaporation plating, finally uses acetone and isopropanol
The gold that glue and glue are deposited above is washed away, the gold in marker graphic region is left.
Further, according to the preferred embodiment of the present embodiment, the marker graphic is in periodic arrangement, can be square or
" ten " font, as shown in Figure 5；The material of the marker graphic is gold.
In step 4, single-root carbon nano-tube is grown by chemical vapour deposition technique, and the single carbon to grow out is received
On the dielectric layer comprising marker graphic that mitron split-up is prepared to step 3；
In step 5, using electron beam exposure combination electron beam evaporation plating, metal nano is prepared on single-root carbon nano-tube
Structure and anode and cathode；Wherein, the gold being finally deposited includes anodic-cathodic, lead electrode and gold nano structure, is all
Secondary beam exposure is primary to be completed, and metal Nano structure part is just pressed in above carbon nanotube.
Wherein, marker graphic described in step 3 is in order to which used in alignment in step 5, step 3 utilizes electron beam exposure
Or ultraviolet photolithographic, the figure marked is made, and leave the gold of marker graphic, then step 5 is according to the label in step 3
Figure positions carbon nanotube, obtains metal Nano structure using electron beam exposure again.The specific steps are：In dielectric
Spin coating last layer PMMA glue in surface utilizes the marker graphic pair in step 3 then by the alignment process in electron beam exposure
Single-root carbon nano-tube is positioned so that and the region of metal Nano structure part can be directly exposed on above single-root carbon nano-tube,
Obtain the graphics field of device of the present invention by development, then upper gold steamed by electron beam evaporation methods, finally use acetone and
Isopropanol washes away the gold that glue and glue are deposited above, leaves the gold of device architecture part.
In step 6, the intersection of single-root carbon nano-tube one end and anode is cut using focused ion beam, forms one
It is intersegmental to be spaced about 10nm away from, described single-root carbon nano-tube one end and anode.Referring to Fig. 6, list is based on for one kind of the present invention
The SEM image of the high frequency tunneling device specific example of root carbon nanotube, the metal Nano structure are a pair of 300nm*300nm's
Square, metal Nano structure spacing are 500nm.
Fig. 7 a, 7b are directly connected on the anodic-cathodic of device respectively with two probes, and semiconductor test is then passed through
The I-V curve that the direct making alive of instrument measures, from Fig. 7 a：It does not use before focused ion tractotomy carbon nanotube 103 (i.e. single
There are no gaps between root carbon nanotube 103 and gold nano structure 105a), the connection of entire device and electric conductivity do not have completely
It is problematic；From Fig. 7 b：Using (i.e. carbon nanotube 103 and gold nano structure after focused ion tractotomy carbon nanotube 103
Have certain interval between 105a), tunneling device can work normally, and have rectifying effect.
Meanwhile referring to Fig. 8, the light field for a kind of high frequency tunneling device based on single-root carbon nano-tube of the present invention drives carbon
The longitudinal profile schematic diagram of 103 electron emission of nanotube, as shown in the figure：The carbon nanotube high frequency tunneling device can swash ultrafast
Under light field 106, realizes that light field drives carbon nanotube electron emissive, CNT electron emissions are driven without electricity.Swashed using ultrafast
The electron emission potential barrier of the high field compression carbon nanotube 103 of light 106, when 106 field strength of ultrafast laser field is sufficiently strong so that
Electronics is emitted to gold anode 105a from 103 tip of carbon nanotube, to realize that light field drives CNT electron emissions.
The working method of the high frequency tunneling device of the present invention is：Pass through the cathode 104b in the high frequency tunneling device
Certain bias is added with anode 104a metals the two poles of the earth, bias can compress the single-root carbon nano-tube 103 between anode 104a
Potential barrier so that electronics can be emitted to anode 104a from 103 one end of single-root carbon nano-tube.Due to single diameter of single-wall carbon nano tube
Very little, only several nanometers, the spacing of carbon nanotube to gold anode also very little, can form a tool between the two by about 10 nanometers
There is the capacitor of very little capacitance, can theoretically work under the conditions of optical frequency.
The present invention provides a kind of high frequency tunneling device and preparation method thereof based on single-root carbon nano-tube, the tunneling device
With rectifying effect, simultaneously because the gap of the diameter very little of carbon nanotube, carbon nanotube and anode is small, the single carbon nanometer
A capacitor with very little capacitance can be formed between pipe and anode so that the capacitance very little of device, it can be in high frequency item
It works under part (more than THz magnitudes), and can theoretically work under optical frequency condition (100THz is even to PHz), relative to existing
Theoretically highest working frequency only has 1.5~2.5THz to have significant improvement to resonance tunnel-through diode in technology.
Explanation in conjunction with the present invention disclosed here and practice, the other embodiment of the present invention is for those skilled in the art
It all will be readily apparent and understand.Illustrate and embodiment is regarded only as being exemplary, true scope of the invention and purport are equal
It is defined in the claims.
Claims (10)
1. a kind of high frequency tunneling device based on single-root carbon nano-tube, including set gradually from bottom to top substrate, dielectric layer,
Single-root carbon nano-tube, metal Nano structure and anode and cathode metal layer；The dielectric deposition over the substrate, institute
State single-root carbon nano-tube deposition on said dielectric layer, the metal Nano structure is arranged above single-root carbon nano-tube；Institute
It states metal Nano structure to be connected to anode and cathode metal layer respectively by metal lead electrode, wherein the single carbon nanometer
One end of pipe and the metal Nano structure connected with anode have at regular intervals.
2. high frequency tunneling device according to claim 1, which is characterized in that the thickness range of the dielectric layer is
10nm-2000nm；The length of the single-root carbon nano-tube be 1nm-100um, can be single-walled carbon nanotube, double-walled carbon nano-tube or
Multi-walled carbon nanotube.
3. high frequency tunneling device according to claim 1, which is characterized in that one end of the single-root carbon nano-tube and with sun
The spacing for the metal Nano structure that pole is connected is 1nm-1um.
4. high frequency tunneling device according to claim 1, which is characterized in that the metal Nano structure and anode and the moon
The material of pole metal layer includes but not limited to following metal：Gold, silver, copper, iron, aluminium, nickel, cobalt, platinum, chromium, titanium.
5. high frequency tunneling device according to any one of claims 1-4, which is characterized in that the metal Nano structure
Size is 20nm-100um, and the spacing of thickness range 5nm-100um, the metal Nano structure are 1nm-100um, institute
The lateral section for stating metal Nano structure is the geometric figure of various rules, the metal Nano structure connected respectively with anode and cathode
Geomery can be not exclusively.
6. the preparation method of high frequency tunneling device according to claim 1, includes the following steps：
Step 1：Select substrate material；
Step 2：Dielectric layer is prepared, membrane deposition method such as electron beam evaporation plating, atomic layer deposition, magnetron sputtering, molecule are utilized
Beam epitaxy or chemical vapor deposition prepare dielectric layer over the substrate, as insulating layer；
Step 3：Marker graphic is made, marker graphic is made on said dielectric layer using ultraviolet photolithographic or electron beam exposure,
In conjunction with membrane deposition method such as electron beam evaporation plating, hot evaporation, magnetron sputtering deposition metal material.
Step 4：Growth single-root carbon nano-tube simultaneously shifts single-root carbon nano-tube：Single carbon is grown by chemical vapour deposition technique to receive
Mitron, and the dielectric layer for including marker graphic prepared by the single-root carbon nano-tube split-up to grow out to step 3
On；
Step 5：Metal Nano structure and cathode and anode are made, electron beam exposure combination film deposition method such as electron beam is utilized
Vapor deposition, hot evaporation or magnetron sputtering prepare metal Nano structure and cathode and anode metal layer on single-root carbon nano-tube；
Step 6：The intersection of single-root carbon nano-tube one end and anode is cut using focused ion beam so that the single carbon
Nanotube one end and anode tool are at regular intervals.
7. preparation method according to claim 6, which is characterized in that spacing described in the step 6, that is, single carbon
Spacing between one end of nanotube and the metal Nano structure connected with anode is 1nm-1um.
8. preparation method according to claim 6, which is characterized in that the moon can be obtained after deposited metal material in step 5
Pole, anode metal layer, lead electrode and metal Nano structure are once completed for second of electron beam exposure.
9. preparation method according to claim 6, which is characterized in that step 3 the specific steps are：In dielectric surface
Spin coating last layer electron beam adhesive or photoresist, then by electron beam exposure or the graphic array of ultraviolet photolithographic exposure label, then
Graphics field is obtained by development, then by membrane deposition method such as electron beam evaporation plating, magnetron sputtering or hot evaporation deposition
Metal material finally washes away the metal material that glue and glue deposit above with acetone and isopropanol, leaves marker graphic region
Metal material；Marker graphic described in step 3 includes but not limited to gold, tungsten using metal material, is in periodic arrangement, for just
Rectangular or " ten " font, thickness 30nm-1um.
10. preparation method according to claim 8, which is characterized in that step 5 the specific steps are：In dielectric surface
Spin coating last layer PMMA glue, then by the alignment process in electron beam exposure, using the marker graphic in step 3 to single
Carbon nanotube is positioned so that the region of metal Nano structure part can be directly exposed on above single-root carbon nano-tube, be passed through
Development obtains the graphics field of the high frequency tunneling device, then passes through membrane deposition method such as electron beam evaporation plating, hot evaporation or magnetic
Metal material on sputtering sedimentation is controlled, finally the metal material that glue and glue are deposited above is washed away with acetone and isopropanol, leaves device
The metal material of part structure division.
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| CN101097823A (en) * | 2006-06-30 | 2008-01-02 | 清华大学 | Mini-size field emission electronic device |
| US20140346558A1 (en) * | 2013-05-21 | 2014-11-27 | Daegu Gyeongbuk Institute Of Science & Technology | Rectifying device and method for manufacturing the same |
| US20150014630A1 (en) * | 2013-07-15 | 2015-01-15 | Sungkyunkwan University Foundation For Corporate Collaboration | Tunneling devices and methods of manufacturing the same |
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|---|---|---|---|---|
| CN101097823A (en) * | 2006-06-30 | 2008-01-02 | 清华大学 | Mini-size field emission electronic device |
| US20140346558A1 (en) * | 2013-05-21 | 2014-11-27 | Daegu Gyeongbuk Institute Of Science & Technology | Rectifying device and method for manufacturing the same |
| US20150014630A1 (en) * | 2013-07-15 | 2015-01-15 | Sungkyunkwan University Foundation For Corporate Collaboration | Tunneling devices and methods of manufacturing the same |
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| CN111620298A (en) * | 2020-05-28 | 2020-09-04 | 武汉大学 | Method for cutting metal nano structure, assembling nano device and characterizing nano device in situ |
| CN111620298B (en) * | 2020-05-28 | 2023-09-15 | 武汉大学 | Method for cutting metal nano structure, assembling nano device and in-situ characterization of nano device |
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