CN108597706A - A kind of resistance TCR adjusting zero methods - Google Patents
A kind of resistance TCR adjusting zero methods Download PDFInfo
- Publication number
- CN108597706A CN108597706A CN201810123723.9A CN201810123723A CN108597706A CN 108597706 A CN108597706 A CN 108597706A CN 201810123723 A CN201810123723 A CN 201810123723A CN 108597706 A CN108597706 A CN 108597706A
- Authority
- CN
- China
- Prior art keywords
- thermistor
- reaction cavity
- resistance
- pressure
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
Abstract
A kind of resistance TCR adjusting zero methods, including：Positive thermistor and negative thermistor are classified, negative thermistor is selected；Negative thermistor is placed in pressure and is less than 10‑13Tor, temperature carry out lasting annealing in 50 70 seconds and are made annealing treatment to negative thermistor under conditions of being 500 900 DEG C, since annealing process can be such that resistance TCR rises, obtain TCR level off to zero steady resistance.The present invention carries out zeroing processing to the underproof resistance of TCR, obtain TCR level off to zero steady resistance, reduce production cost, reduce environmental pollution.
Description
Technical field
This application involves resistance production technical fields, and in particular to a kind of resistance TCR adjusting zero methods.
Background technology
Temperature-coefficient of electrical resistance TCR (Temperature Coefficient of resistance)：I.e. temperature often changes 1
The value of degree Celsius resistance variations.
With the variation of temperature, the resistance value of resistance can occur to change accordingly, and in a circuit system, temperature causes
Resistance variations the stability of whole system and the temperature of adaptation can be impacted, in order to solve this problem, it is intended that
Produce TCR it is smaller in addition level off to zero resistance.
The resistance industrially produced is required for, by an election process, selecting the resistance of TCR qualifications, and TCR is unqualified
Resistance then be used as waste recovery, waste recovery process complexity utilization rate is not high and can cause environmental pollution, causes product in this way
It is of high cost.
Invention content
The application provides a kind of resistance TCR adjusting zero methods, and resistance RCR is made to level off to zero.
According in a first aspect, provide a kind of resistance TCR adjusting zero methods in a kind of embodiment, including：By positive thermistor and
Negative thermistor is classified, and negative thermistor is selected；Negative thermistor is placed in pressure and is less than 10-13Tor, temperature 500-
The annealing for continuing 50-70 seconds is carried out under conditions of 900 DEG C.
Preferably, it is 10 negative thermistor to be placed in pressure-15Tor, temperature carry out lasting 60 seconds under conditions of being 600 DEG C
Annealing.
Preferably, further include：Select positive thermistor；Positive thermistor is placed in reaction cavity, is had in reaction cavity
There is pressure to be more than 1200psi, temperature is the supercritical carbon dioxide more than 31 DEG C, the solubilization matter in the supercritical carbon dioxide,
First supercritical processing is carried out to positive thermistor, processing time is more than 50 minutes, the volume ratio of the solute volume and reaction cavity
For 0.1%-1%.
Preferably, further include：Select positive thermistor；Positive thermistor is placed in reaction cavity, is had in reaction cavity
The supercritical carbon dioxide that it is 3000psi to have pressure, temperature is 120 DEG C, the solubilization matter in the supercritical carbon dioxide, to positive heat
Quick resistance carries out first supercritical processing, and processing time is 60 minutes, and the volume ratio of the solute volume and reaction cavity is 0.3%.
According to second aspect, a kind of resistance TCR adjusting zero methods are provided in a kind of embodiment, including：By positive thermistor and
Negative thermistor is classified, and positive thermistor is selected；Positive thermistor is placed in reaction cavity, there is pressure in reaction cavity
It is powerful in 1200psi, temperature be supercritical carbon dioxide more than 31 DEG C, the solubilization matter in the supercritical carbon dioxide, to just
Thermistor carries out first supercritical processing, and processing time is more than 50 minutes, and the volume ratio of the solute volume and reaction cavity is
0.1%-1%.
Preferably, have pressure more than 1200psi in reaction cavity, the supercritical carbon dioxide that temperature is 115-135 DEG C,
The solubilization matter in the supercritical carbon dioxide carries out first supercritical processing to positive thermistor, and processing time is more than 50 minutes, described
Solute volume and the volume ratio of reaction cavity are 0.1%-1%.
Preferably, it is 3000psi to have pressure in reaction cavity, and the supercritical carbon dioxide that temperature is 120 DEG C is super at this
Solubilization matter in critical carbon dioxide carries out first supercritical processing to positive thermistor, and processing time is 60 minutes, the solute volume
Volume ratio with reaction cavity is 0.3%.
Preferably, the solute is deionized water, ammonia, hydrogen sulfide.
Preferably, further include：Select negative thermistor；Negative thermistor is placed in pressure and is less than 10-13Tor, temperature are
The annealing for continuing 50-70 seconds is carried out under conditions of 500-900 DEG C.
Preferably, further include：Select negative thermistor；It is 10 that negative thermistor, which is placed in pressure,-15Tor, temperature 600
Lasting annealing in 60 seconds is carried out under conditions of DEG C.
According to a kind of resistance TCR adjusting zero methods of above-described embodiment, negative thermistor is made annealing treatment, due to annealing
Process can make resistance TCR rise, obtain TCR level off to zero steady resistance.A kind of resistance according to above-mentioned another embodiment
TCR adjusting zero methods carry out first supercritical processing to positive thermistor, since first supercritical processing can be such that positive thermistor TCR declines, obtain
TCR level off to zero steady resistance.Pass through above-mentioned technical proposal can be by resistance production process, the underproof resistance of TCR
Carry out zeroing processing, obtain TCR level off to zero steady resistance, reduce production cost, reduce environmental pollution.
Description of the drawings
Fig. 1 is the application resistance industrial process stream figure.
Specific implementation mode
Below by specific implementation mode combination attached drawing, invention is further described in detail.Wherein different embodiments
Middle similar component uses associated similar element numbers.In the following embodiments, many datail descriptions be in order to
The application is better understood.However, those skilled in the art can be without lifting an eyebrow recognize, which part feature
It is dispensed, or can be substituted by other elements, material, method in varied situations.In some cases, this Shen
Please it is relevant some operation there is no in the description show or describe, this is the core in order to avoid the application by mistake
More descriptions are flooded, and to those skilled in the art, these relevant operations, which are described in detail, not to be necessary, they
It can completely understand relevant operation according to the general technology knowledge of description and this field in specification.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).
Referring to FIG. 1, in industrial production, resistance is tested first, the resistance of test passes is put into qualified products
In frame, and the underproof resistance of TCR is then to being put into substandard product frame；
TCR classification is carried out to the underproof resistance of TCR, selects TCR respectively>0 positive thermistor and TCR<0 negative temperature-sensitive
Resistance；
To TCR>0 positive thermistor carries out first supercritical processing, and positive thermistor TCR is made to decline, and obtains TCR and levels off to zero
Steady resistance；To TCR<0 negative thermistor is made annealing treatment, and negative thermistor TCR is made to increase, and is obtained TCR and is leveled off to
Zero steady resistance；
After returning to zero to above-mentioned resistance TCR, then TCR tests being carried out, the resistance of test passes is put into qualified products frame, and
The underproof resistance of TCR then recycles above-mentioned classification and TCR zeroings processing, until resistance TCR is qualified.
First supercritical processing citing is carried out to positive thermistor below.
Embodiment one：
Positive thermistor is placed in reaction cavity, carbon dioxide is packed into the reaction cavity that capacity is 165ml, to two
Carbonoxide carry out increasing temperature and pressure, obtain the supercritical carbon dioxide that pressure is 3000psi, temperature is 120 DEG C, this overcritical two
0.5ml deionized waters are added in carbonoxide；With this condition, 60 minutes first supercritical processings are carried out to positive thermistor, then taken
Go out positive thermistor.
Embodiment two：
Positive thermistor is placed in reaction cavity, carbon dioxide is packed into the reaction cavity that capacity is 165ml, to two
Carbonoxide carry out increasing temperature and pressure, obtain the supercritical carbon dioxide that pressure is 1300psi, temperature is 135 DEG C, this overcritical two
1.5ml ammonias are added in carbonoxide；With this condition, 70 minutes first supercritical processings are carried out to positive thermistor, then taken out just
Thermistor.
Embodiment three：
Positive thermistor is placed in reaction cavity, carbon dioxide is packed into the reaction cavity that capacity is 165ml, to two
Carbonoxide carry out increasing temperature and pressure, obtain the supercritical carbon dioxide that pressure is 3500psi, temperature is 32 DEG C, this overcritical two
1.5ml hydrogen sulfide is added in carbonoxide；With this condition, 50 minutes first supercritical processings are carried out to positive thermistor, then taken out
Positive thermistor.
Example IV：
Positive thermistor is placed in reaction cavity, carbon dioxide is packed into the reaction cavity that capacity is 165ml, to two
Carbonoxide carry out increasing temperature and pressure, obtain the supercritical carbon dioxide that pressure is 3000psi, temperature is 115 DEG C, this overcritical two
0.165ml deionized waters are added in carbonoxide；With this condition, 60 minutes first supercritical processings are carried out to positive thermistor, then
Take out positive thermistor.
Wherein, psi (Pounds per square inch), is a kind of measurement unit, is meant pound/square inch.
Substance in nature can generally show three kinds of states --- solid-state, liquid and gaseous state, with temperature and pressure
The variation of power, substance can usually change between these three states.Other than these three states, there is also a kind of critical for substance
State shows as a critical point on the phasor of substance, corresponds to a critical pressure and critical-temperature.The shape of substance
For state close to when critical point, the characteristics such as its density, viscosity, solubility, thermal capacity, dielectric constant can be with the change of temperature and pressure
Change and violent change occurs.Supercriticality refers to the pressure and temperature of substance while the critical pressure more than it and critical-temperature
State.Supercritical carbon dioxide refers to the carbon dioxide into above-critical state, and solubility and penetrability are higher.
Annealing citing is carried out to negative thermistor below.
Embodiment five：
It is 10 that negative thermistor, which is placed in pressure,-15Tor, temperature carry out lasting annealing in 60 seconds under conditions of being 600 DEG C.
Embodiment six：
It is 10 that negative thermistor, which is placed in pressure,-13Tor, temperature carry out lasting annealing in 70 seconds under conditions of being 500 DEG C.
Embodiment seven：
It is 10 that negative thermistor, which is placed in pressure,-14Tor, temperature carry out lasting annealing in 50 seconds under conditions of being 900 DEG C.
Embodiment eight：
It is 10 that negative thermistor, which is placed in pressure,-13Tor, temperature carry out lasting annealing in 60 seconds under conditions of being 900 DEG C.
Embodiment nine：
It is 10 that negative thermistor, which is placed in pressure,-15Tor, temperature carry out lasting annealing in 60 seconds under conditions of being 900 DEG C.
Wherein, tor is a kind of pressure unit, and conversion relation is between pressure unit pa Pa：1tor=
133.3223684Pa。
Use above specific case is illustrated the present invention, is merely used to help understand the present invention, not limiting
The system present invention.For those skilled in the art, according to the thought of the present invention, can also make several simple
It deduces, deform or replaces.
Claims (10)
1. a kind of resistance TCR adjusting zero methods, it is characterised in that including：
Positive thermistor and negative thermistor are classified, negative thermistor is selected；
Negative thermistor is placed in pressure and is less than 10-13Tor, temperature carry out continuing 50-70 seconds under conditions of being 500-900 DEG C
Annealing.
2. resistance TCR adjusting zero methods as described in claim 1, it is characterised in that：It is 10 that negative thermistor, which is placed in pressure,- 15Tor, temperature carry out lasting annealing in 60 seconds under conditions of being 600 DEG C.
3. resistance TCR adjusting zero methods as described in claim 1, which is characterized in that further include：
Select positive thermistor；
Positive thermistor is placed in reaction cavity, there is pressure to be more than 1200psi in reaction cavity, temperature is more than 31 DEG C
Supercritical carbon dioxide, the solubilization matter in the supercritical carbon dioxide carry out first supercritical processing, processing time to positive thermistor
More than 50 minutes, the volume ratio of the solute volume and reaction cavity was 0.1%-1%.
4. resistance TCR adjusting zero methods as claimed in claim 3, which is characterized in that further include：
Select positive thermistor；
Positive thermistor is placed in reaction cavity, with pressure is 3000psi in reaction cavity, temperature is that 120 DEG C super faces
Boundary's carbon dioxide, the solubilization matter in the supercritical carbon dioxide carry out first supercritical processing, processing time 60 to positive thermistor
Minute, the volume ratio of the solute volume and reaction cavity is 0.3%.
5. a kind of resistance TCR adjusting zero methods, it is characterised in that including：
Positive thermistor and negative thermistor are classified, positive thermistor is selected；
Positive thermistor is placed in reaction cavity, there is pressure to be more than 1200psi, temperature is more than 31 DEG C in reaction cavity
Supercritical carbon dioxide, the solubilization matter in the supercritical carbon dioxide carry out first supercritical processing, processing time to positive thermistor
More than 50 minutes, the volume ratio of the solute volume and reaction cavity was 0.1%-1%.
6. resistance TCR adjusting zero methods as claimed in claim 5, it is characterised in that：It is more than with pressure in reaction cavity
1200psi, the supercritical carbon dioxide that temperature is 115-135 DEG C, the solubilization matter in the supercritical carbon dioxide, to positive temperature-sensitive electricity
Resistance carries out first supercritical processing, and processing time is more than 50 minutes, and the volume ratio of the solute volume and reaction cavity is 0.1%-
1%.
7. resistance TCR adjusting zero methods as claimed in claim 5, it is characterised in that：It is with pressure in reaction cavity
3000psi, temperature are 120 DEG C of supercritical carbon dioxide, the solubilization matter in the supercritical carbon dioxide, to positive thermistor into
Row first supercritical processing, processing time are 60 minutes, and the volume ratio of the solute volume and reaction cavity is 0.3%.
8. the resistance TCR adjusting zero methods as described in claim 5-7 is any, it is characterised in that：The solute be deionized water,
Ammonia, hydrogen sulfide.
9. resistance TCR adjusting zero methods as claimed in claim 5, which is characterized in that further include：
Select negative thermistor；
Negative thermistor is placed in pressure and is less than 10-13Tor, temperature carry out continuing 50-70 seconds under conditions of being 500-900 DEG C
Annealing.
10. resistance TCR adjusting zero methods as claimed in claim 5, which is characterized in that further include：
Select negative thermistor；
It is 10 that negative thermistor, which is placed in pressure,-15Tor, temperature carry out lasting annealing in 60 seconds under conditions of being 600 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123723.9A CN108597706B (en) | 2018-02-07 | 2018-02-07 | Method for zeroing resistor TCR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123723.9A CN108597706B (en) | 2018-02-07 | 2018-02-07 | Method for zeroing resistor TCR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108597706A true CN108597706A (en) | 2018-09-28 |
| CN108597706B CN108597706B (en) | 2020-05-12 |
Family
ID=63608978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810123723.9A Active CN108597706B (en) | 2018-02-07 | 2018-02-07 | Method for zeroing resistor TCR |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108597706B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489873A (en) * | 2020-04-17 | 2020-08-04 | 西安神电电器有限公司 | Resistor and combination, system and resistance value deviation elimination method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4079349A (en) * | 1976-09-29 | 1978-03-14 | Corning Glass Works | Low TCR resistor |
| US4375056A (en) * | 1980-02-29 | 1983-02-22 | Leeds & Northrup Company | Thin film resistance thermometer device with a predetermined temperature coefficent of resistance and its method of manufacture |
| CN88101639A (en) * | 1987-02-27 | 1988-09-21 | 约翰弗兰克制造公司 | Combined resistance and manufacture method thereof |
| CN1029497C (en) * | 1991-09-30 | 1995-08-09 | 纳幕尔杜邦公司 | Thick film ntc thermistor compositions |
| CN1949459A (en) * | 2006-10-26 | 2007-04-18 | 昆明理工大学 | Method for directly preparing Cr-Si silicide resistance film on surface of monocrystalline silicon substrate |
-
2018
- 2018-02-07 CN CN201810123723.9A patent/CN108597706B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4079349A (en) * | 1976-09-29 | 1978-03-14 | Corning Glass Works | Low TCR resistor |
| US4375056A (en) * | 1980-02-29 | 1983-02-22 | Leeds & Northrup Company | Thin film resistance thermometer device with a predetermined temperature coefficent of resistance and its method of manufacture |
| CN88101639A (en) * | 1987-02-27 | 1988-09-21 | 约翰弗兰克制造公司 | Combined resistance and manufacture method thereof |
| CN1029497C (en) * | 1991-09-30 | 1995-08-09 | 纳幕尔杜邦公司 | Thick film ntc thermistor compositions |
| CN1949459A (en) * | 2006-10-26 | 2007-04-18 | 昆明理工大学 | Method for directly preparing Cr-Si silicide resistance film on surface of monocrystalline silicon substrate |
Non-Patent Citations (1)
| Title |
|---|
| 陈志一: ""方便、廉价的高稳定微带电路铬薄膜电阻"", 《现代雷达》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489873A (en) * | 2020-04-17 | 2020-08-04 | 西安神电电器有限公司 | Resistor and combination, system and resistance value deviation elimination method thereof |
| CN111489873B (en) * | 2020-04-17 | 2021-11-09 | 西安神电电器有限公司 | Resistor for direct current transmission engineering, combination, system and resistance value deviation elimination method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108597706B (en) | 2020-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xia et al. | Comparative study on prop-1-ene-1, 3-sultone and vinylene carbonate as electrolyte additives for Li (Ni1/3Mn13Co1/3) O2/graphite pouch cells | |
| Smith et al. | Delta differential capacity analysis | |
| Burns et al. | Impedance Reducing Additives and Their Effect on Cell Performance: II. C3H9B3O6 | |
| Chu et al. | Testing lithium-ion battery with the internal reference electrode: an insight into the blocking effect | |
| Biswas et al. | Realization and characterization of carbon black based fractional order element | |
| EP3203338A1 (en) | Plant performance evaluation apparatus, plant performance evaluation system, and plant performance evaluation method | |
| CN108597706A (en) | A kind of resistance TCR adjusting zero methods | |
| Yu et al. | Experimental study on specific heat capacity of lithium thionyl chloride batteries by a precise measurement method | |
| Porras-Hermoso et al. | Lithium-ion battery performance modeling based on the energy discharge level | |
| Cai et al. | Dynamical scaling of charge and spin responses at a Kondo destruction quantum critical point | |
| CN107122506B (en) | top layer oil temperature thermal model construction method considering transformer oil nonlinear time constant | |
| Schindler et al. | Analyzing the aging behavior of lithium-ion cells connected in parallel considering varying charging profiles and initial cell-to-cell variations | |
| Vorwerk et al. | Detection of Critical Conditions in Pouch Cells Based on Their Expansion Behavior | |
| Kumar et al. | Slow dynamics in hard condensed matter: a case study of the phase separating system NdNiO3 | |
| Stein et al. | Thermal electrical tests for battery safety standardization | |
| Schober | Pressure dependence of diffusion in simple glasses and supercooled liquids | |
| CN113421674B (en) | Method and device for calculating leakage rate of primary loop during high-temperature reactor cold test | |
| Wang et al. | Characterization of the aging behavior of raw epoxidized natural rubber with a rubber processing analyzer | |
| Liu et al. | Variational approach to renormalized phonon in momentum-nonconserving nonlinear lattices | |
| Zhao et al. | Investigation of relaxation process of polycarbonate/poly (vinylidene fluoride-hexafluoropropylene) composites using dielectric relaxation spectroscopy | |
| Zhang et al. | Experimental and computational research on the thermal conductivities of Li/SOCl2 batteries | |
| CN211577027U (en) | Device for testing expansion performance of alloy pipe | |
| Gargyants | On the existence of a linear differential system with given values of the Perron exponent | |
| CN115541407A (en) | Method for obtaining high-temperature creep parameters of iron-nickel-based alloy | |
| Huh et al. | Comparative Study for Spacer Grid Models of TRACE and RELAP5 in FLECHT-SEASET Reflood Test |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |