CN108593186B - Underground pressure detection device and method based on double giant piezoresistive sensors - Google Patents
Underground pressure detection device and method based on double giant piezoresistive sensors Download PDFInfo
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- CN108593186B CN108593186B CN201810634962.0A CN201810634962A CN108593186B CN 108593186 B CN108593186 B CN 108593186B CN 201810634962 A CN201810634962 A CN 201810634962A CN 108593186 B CN108593186 B CN 108593186B
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention discloses an underground pressure detection device based on double giant piezoresistive sensors, which comprises a giant piezoresistive pressure sensor with a high pressure range and a low pressure range, a power supply, a signal processing circuit, an analog selector, an analog-to-digital converter, a singlechip, a wireless communication module and a positioning module; the giant piezoresistance pressure sensor is connected with the module selector, and the collected data signals are transmitted to the signal processing circuit through the analog selector; the signal processing circuit processes the signal selected by the module selector, converts the analog signal into a digital signal through the analog-to-digital converter and transmits the digital signal to the singlechip; the wireless communication module is used for receiving data from the singlechip and sending the data to a mobile phone of a user; the positioning module is used for acquiring the underground depth of the giant piezoresistive pressure sensor. The invention obviously improves the sensitivity and resolution of underground pressure measurement, weakens nonlinear errors, and can realize uniform high-precision pressure measurement in the whole underground detection range (0-8 km).
Description
Technical Field
The invention belongs to the technical field of micro-nano electromechanical system sensors, and particularly relates to an underground pressure detection device and a measurement method based on a double giant piezoresistive sensor.
Background
In the petroleum exploitation process, the underground environment is complex and changeable, and physical parameters such as underground temperature, underground pressure and the like are required to be monitored in real time so as to determine the distribution condition of an underground oil layer and protect the normal and stable continuous operation of the electric submersible pump. Downhole pressure is a paramount parameter reflecting the real-time condition of the production well, and is typically obtained in real-time by downhole pressure sensors. Considering that the underground pressure needs to be monitored on line for a long time by the systems such as the submersible electric pump, the oil reservoir monitoring, the intelligent well and the like, the underground pressure sensor with good long-term stability, high sensitivity and high measurement precision is needed. However, the change of the pressure in the well along with the increase of the depth is relatively large, and the temperature drift and the nonlinear error exist in the conventional piezoresistive pressure sensor, so that the temperature compensation and the linearization correction of the pressure sensor are required. Even so, due to limitations of sensor structure and operating principles, conventional piezoresistive pressure sensors are difficult to be compatible with high sensitivity and measurement accuracy over the entire well depth range (0-8 km). Meanwhile, the underground pressure sensor is taken into the well along with the drilling process, and is difficult to take out at will for recalibration, so that the realization of uniform high-precision pressure measurement in the whole well depth range is an unprecedented problem by adopting a novel sensor device and a measurement method thereof.
Disclosure of Invention
The invention aims to solve the technical problem of providing an underground pressure detection device based on a double-giant piezoresistive sensor, which adopts a mode of combining a heterojunction giant piezoresistive sensor with a compound measuring range, so that the sensitivity and resolution of underground pressure measurement are obviously improved, nonlinear errors are weakened, and uniform high-precision pressure measurement can be realized in the whole underground detection range (0-8 km).
In order to solve the technical problems, the invention adopts the following technical scheme: the underground pressure detection device based on the double giant piezoresistive sensors comprises a giant piezoresistive pressure sensor with a high pressure range and a low pressure range, a power supply, a signal processing circuit, an analog selector, an analog-to-digital converter, a singlechip, a wireless communication module and a positioning module; the power supply is connected with the giant piezoresistive pressure sensor, the signal processing circuit, the analog-to-digital converter and the singlechip to supply power to the giant piezoresistive pressure sensor; the giant piezoresistive pressure sensor is connected with the module selector; the giant piezoresistive pressure sensor gates the acquired data signals to a signal processing circuit through an analog selector; the analog selector is sequentially connected with the signal processing circuit, the analog-to-digital converter and the singlechip; the signal processing circuit processes the signal selected by the module selector; then converting the analog signal into a digital signal through an analog-to-digital converter, and transmitting the digital signal to the singlechip; the singlechip is connected with the wireless communication module and the positioning module; the wireless communication module is used for receiving data from the singlechip and sending the data to a mobile phone of a user; the positioning module is used for acquiring the underground depth of the giant piezoresistive pressure sensor.
Further, the high-pressure range giant piezoresistive pressure sensor and the low-pressure range giant piezoresistive pressure sensor are both arranged in a square container, one side of the square container is provided with a guide pipe, silicone oil is filled in the guide pipe, and the top of the guide pipe is provided with a filter.
Further, the square container is made of silicon nitride.
Further, the power supply comprises a reference voltage source, an analog power supply and a digital power supply; the reference voltage source is connected with the high-pressure range giant piezoresistive pressure sensor and the low-pressure range giant piezoresistive pressure sensor to supply power to the high-pressure range giant piezoresistive pressure sensor; the analog power supply is connected with the signal processing circuit and supplies power to the signal processing circuit; the digital power supply is connected with the analog-digital converter and the singlechip to supply power for the analog-digital converter and the singlechip.
Further, the signal processing circuit comprises a voltage amplifying circuit and a low-pass filter; the voltage amplifying circuit and the low-pass filter amplify and filter and denoise the signals.
Further, the giant piezoresistance pressure sensor with the high pressure range is a silicon-titanium heterojunction pressure sensor; the silicon-titanium heterojunction pressure sensor is sequentially provided with a sapphire substrate layer, a vacuum cavity, a sensitive device layer A, an insulating silicon dioxide layer and a bending and stretching silicon stress film top layer from bottom to top; the insulation silicon dioxide layer is provided with four silicon-titanium heterojunction sensing units with hexagonal prism-shaped cross sections, a metal edge A, a lead A, a metal sheet A, an electrode A and an aluminum terminal A; each silicon-titanium heterojunction sensing unit comprises an inner silicon A, an intermediate layer titanium and an outer silicon A which are nested in sequence from inside to outside, wherein an outer silicon-titanium heterojunction is arranged at the junction of the outer silicon A and the intermediate layer titanium, and an inner silicon-titanium heterojunction is arranged at the junction of the intermediate layer titanium and the inner silicon A. The two ends of the silicon-titanium heterojunction sensing unit are provided with metal edges A, each metal edge A is connected with a metal sheet A through a lead A, the metal sheet A is connected with an aluminum terminal A through an electrode A led out from the metal sheet A, and all structures arranged on the lower surface of the insulating silicon dioxide layer form a sensitive device layer A.
Further, the giant piezoresistance pressure sensor with the low pressure range is a silicon gallium heterojunction pressure sensor; the silicon gallium heterojunction pressure sensor is sequentially provided with a sapphire substrate layer, a vacuum cavity, a sensitive device layer B, an insulating silicon dioxide layer and a silicon stress film top layer without bending and stretching from bottom to top; the lower surface of the insulating silicon dioxide layer is provided with four silicon gallium heterojunction sensing units with cylindrical sections, a metal edge B, a lead B, a metal sheet B, an electrode B and an aluminum terminal B; each silicon gallium heterojunction sensing unit comprises an inner silicon B layer, an intermediate layer gallium layer and an outer silicon B layer which are sequentially nested from inside to outside, wherein an outer silicon gallium heterojunction is arranged at the junction of the outer silicon B layer and the intermediate layer gallium layer, and an inner silicon gallium heterojunction is arranged at the junction of the intermediate layer gallium layer and the inner layer silicon B layer. The two ends of the silicon gallium heterojunction sensing unit are provided with metal edges B, each metal edge B is connected with a metal sheet B through a lead wire B, the metal sheet B is connected with an aluminum terminal B through an electrode B led out of the metal sheet B, and all structures arranged on the lower surface of the insulating silicon dioxide layer form a sensitive device layer B.
Further, a prismatic table is arranged on the top layer of the silicon stress film.
Further, the analog-to-digital converter adopts an AD7671 analog-to-digital converter; the model of the singlechip is STM32F103VET6; the wireless communication module is a LORA module.
The invention also provides a measuring method of the underground pressure detection device based on the double giant piezoresistive pressure sensor, which is characterized in that: the pressure detection device is provided with a positioning module, the underground depth of the sensor is obtained through the positioning module, when the sensor is positioned at the underground depth of 1000 meters or more, the silicon gallium heterojunction giant piezoresistive pressure sensor is selected by the multiplexer to measure, and when the sensor is positioned at the underground depth of 1000 meters or less, the silicon titanium heterojunction giant piezoresistive pressure sensor is selected by the multiplexer to measure. The singlechip transmits the data to the wireless communication module, the wireless communication module sends the data back to the mobile phone APP, the underground pressure data is measured, and finally the measured data of the two measuring ranges are combined to form integral data of 0.1-800MPa composite measuring range.
Compared with the prior art, the invention has the following technical effects:
1. the invention combines the high-pressure range pressure sensor and the low-pressure range pressure sensor, and compared with the traditional single underground pressure sensor, the invention combines high linearity and high sensitivity in the whole range of the compound, and effectively improves the measurement accuracy;
2. according to the embedded shaft type silicon-titanium heterojunction sensing unit and the silicon-gallium heterojunction sensing unit, stress can be amplified in the transverse direction and the longitudinal direction at the same time under the action of underground oil pressure, and larger resistance value change is generated under the same stress condition, so that the piezoresistive coefficient and the strain coefficient are increased in a multiplied mode, the sensitivity is greatly improved, and the measured data are more accurate.
3. The invention adopts the silicon-titanium heterojunction sensing unit and the silicon-gallium heterojunction sensing unit which have low temperature coefficients, and the Wheatstone bridge formed by the silicon-titanium heterojunction sensing unit and the silicon-gallium heterojunction sensing unit has a temperature compensation function, so that the influence of the temperature of the underground environment on the pressure measurement result is obviously reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of a titanium silicon heterojunction pressure sensor in accordance with the present invention;
FIG. 2 is a schematic diagram of a SiTi heterojunction sensor cell according to the present invention;
FIG. 3 is a cross-sectional view of a titanium silicon heterojunction sensing cell in accordance with the present invention;
FIG. 4 is a top view of a silicon gallium heterojunction pressure sensor according to the invention;
FIG. 5 is a schematic diagram of a structure of a silicon gallium heterojunction sensing cell according to the present invention;
FIG. 6 is a cross-sectional view of a silicon gallium heterojunction sensing cell in accordance with the present invention;
FIG. 7 is a cross-sectional view of a silicon-titanium heterojunction pressure sensor of the present invention;
FIG. 8 is a cross-sectional view of a silicon gallium heterojunction pressure sensor of the invention;
FIG. 9 is a general schematic of a downhole pressure sensing device of the present invention;
fig. 10 is a sensor mounting schematic of the present invention.
Wherein, 1-outer layer silicon A, 2-middle layer titanium, 3-inner layer silicon A, 4-outer silicon titanium heterojunction, 5-inner silicon titanium heterojunction, 6-metal edge A, 7-aluminum terminal A, 8-electrode A, 9-metal sheet A, 10-lead A, 12-silicon titanium heterojunction pressure sensor, 13-outer layer silicon B, 14-middle layer gallium, 15-inner layer silicon B, 16-outer silicon gallium heterojunction, 17-inner silicon gallium heterojunction, 18-metal edge B, 19-aluminum terminal B, 20-electrode B, 21-metal sheet B, 22-lead B, 24-silicon gallium heterojunction pressure sensor, 25-sapphire substrate layer, 26-insulating silicon dioxide layer, 27-bending tensile silicon stress film top layer, 28-non-bending tensile silicon stress film top layer, 29-vacuum cavity, 30-prismatic table, 31-square container, 32-conduit and 33-filter.
Detailed Description
The technical scheme of the present invention will be clearly and completely described in the following detailed description.
A downhole pressure detection device based on double giant piezoresistive sensors comprises two giant piezoresistive pressure sensors with different measuring ranges, one is a silicon-titanium heterojunction pressure sensor 12 which can measure high pressure (oil pressure greater than 100 MPa), and the other is a silicon-gallium heterojunction pressure sensor 24 which is mainly used for measuring low pressure (oil pressure less than 100 MPa).
As shown in fig. 1-8, the silicon-titanium heterojunction pressure sensor 12 is sequentially provided with a sapphire substrate layer 25, a vacuum cavity 29, a sensitive device layer a, an insulating silicon dioxide layer 26 and a bending and stretching silicon stress film top layer 27 from bottom to top, and the bending and stretching silicon stress film top layer 27 can bear larger downhole pressure (oil pressure greater than 100 MPa). The insulating silicon dioxide layer 26 has four silicon-titanium heterojunction sensing units with hexagonal prism-shaped cross sections, each silicon-titanium heterojunction sensing unit comprises an inner silicon A, an intermediate layer titanium and an outer silicon A which are nested in sequence from inside to outside, the junction of the outer silicon A1 and the intermediate layer titanium 2 is an outer silicon-titanium heterojunction 4, and the junction of the intermediate layer titanium 2 and the inner layer silicon A3 is an inner silicon-titanium heterojunction 5. Both ends of the silicon-titanium heterojunction are provided with metal edges A6, each metal edge A6 is connected with a metal sheet A9 through a lead A10, the metal sheet A9 is connected with an aluminum terminal A7 through an electrode A8 led out from the metal sheet A9, and all structures arranged on the lower surface of the insulating silicon dioxide layer 26 form a sensitive device layer A.
The silicon gallium heterojunction pressure sensor 24 is composed of a sapphire substrate layer 25, a vacuum cavity 29, a sensitive device layer B, an insulating silicon dioxide layer 26 and a silicon stress film top layer 28 without bending stretching, wherein the silicon stress film top layer 28 without bending stretching can bear and accurately measure small downhole pressure (oil pressure less than 100 Mpa). The insulating silicon dioxide layer 26 has four silicon gallium heterojunction sensing units with cylindrical sections, each silicon gallium heterojunction sensing unit comprises an inner silicon B, an intermediate silicon B and an outer silicon B which are nested in sequence from inside to outside, the junction of the outer silicon B13 and the intermediate silicon B14 is an outer silicon gallium heterojunction 16, and the junction of the intermediate silicon B14 and the inner silicon B15 is an inner silicon gallium heterojunction 17. The two ends of the silicon gallium heterojunction are provided with metal edges B18, each metal edge B18 is connected with a metal sheet B21 through a lead B22, the metal sheet B21 is connected with an aluminum terminal B19 through an electrode B20 led out from the metal sheet B21, and all structures arranged on the lower surface of the insulating silicon dioxide layer 26 form a sensitive device layer B.
As shown in fig. 1 and fig. 4, the silicon gallium heterojunction giant piezoresistive sensing units and the silicon titanium heterojunction giant piezoresistive sensing units are respectively disposed around the lower surface of the insulating silicon dioxide layer 26, and the giant piezoresistive sensing units symmetrically form a wheatstone bridge in pairs, and are powered by a reference voltage source. As shown in fig. 7 and 8, the top layer of the silicon stress film is provided with a ridge 30 upwards to increase the sensitivity and linearity of the sensor.
The sensitivity can be improved by orders of magnitude by adopting a giant piezoresistive sensor to measure the underground pressure. As shown in fig. 9, the downhole pressure detection device further comprises a power supply, an analog selector, a voltage amplifying circuit, a low-pass filter, an a/D converter, a singlechip, a positioning module, a LORA module and a mobile phone APP, wherein the power supply comprises an analog power supply, a digital power supply and a reference voltage source which are respectively connected with and used for supplying power to the giant piezoresistive sensor, the voltage amplifying circuit, the low-pass filter, the a/D converter and the singlechip; the silicon-titanium heterojunction giant piezoresistive sensor 12 and the silicon-gallium heterojunction giant piezoresistive sensor 24 are connected with an analog selector, signals are amplified, filtered and denoised through a voltage amplifying circuit and a low-pass filter after being selected, analog signals are converted into digital signals through an A/D converter, the digital signals are transmitted to an STM32 singlechip, and finally data are received from the singlechip through a LORA module and displayed on a user mobile phone APP. The model of the singlechip is STM32F103VET6.
As shown in fig. 10, two types of giant piezoresistive pressure sensors are placed in a square container 31, which are used to measure the pressure at different depths downhole, respectively. The square container 31 is made of silicon nitride and can withstand high pressure. One side of the square container 31 is provided with a conduit 32, silicone oil is filled in the conduit 32, and a filter 33 is arranged on the top layer of the conduit 32. The filter 33 can prevent sundries from falling to block the guide pipe 32, and can isolate the sensor from the outside, so that the sensor can be well protected.
The method of the underground pressure detection device based on the double giant piezoresistive sensors comprises the following steps: the underground pressure detection device is provided with a positioning module, the underground depth of the sensor is obtained through the positioning module, when the sensor is positioned at the underground depth of 1000 meters or more, the silicon-gallium heterojunction pressure sensor is selected to measure through the multiplexer, and when the sensor is positioned at the underground depth of 1000 meters or less, the silicon-titanium heterojunction pressure sensor is selected to measure through the multiplexer. The singlechip transmits the data to the LORA wireless communication module, the wireless communication module transmits the data back to the mobile phone APP, the underground pressure data is measured, and finally the measured data of the two measuring ranges are combined to form integral data of 0.1-800MPa composite measuring range.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and the present invention is not limited to the above embodiments, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the design concept of the present invention should fall within the protection scope of the present invention, and the claimed technical content of the present invention is fully described in the claims.
Claims (8)
1. An underground pressure detection device based on double giant piezoresistive sensors, which is characterized in that: the device comprises a giant piezoresistive pressure sensor with a high-voltage range and a low-voltage range, a power supply, a signal processing circuit, an analog selector, an analog-to-digital converter, a singlechip, a wireless communication module and a positioning module; the power supply is connected with the giant piezoresistive pressure sensor, the signal processing circuit, the analog-to-digital converter and the singlechip to supply power to the giant piezoresistive pressure sensor; the giant piezoresistive pressure sensor is connected with the analog selector; the giant piezoresistive pressure sensor gates the acquired data signals to a signal processing circuit through an analog selector; the analog selector is sequentially connected with the signal processing circuit, the analog-to-digital converter and the singlechip; the signal processing circuit processes the signal selected by the module selector; then converting the analog signal into a digital signal through an analog-to-digital converter, and transmitting the digital signal to the singlechip; the singlechip is connected with the wireless communication module and the positioning module; the wireless communication module is used for receiving data from the singlechip and sending the data to a mobile phone of a user; the positioning module is used for acquiring the underground depth of the giant piezoresistive pressure sensor;
the giant piezoresistance pressure sensor with the high pressure range is a silicon-titanium heterojunction pressure sensor; the silicon-titanium heterojunction pressure sensor is sequentially provided with a sapphire substrate layer, a vacuum cavity, a sensitive device layer A, an insulating silicon dioxide layer and a bending and stretching silicon stress film top layer from bottom to top; the insulation silicon dioxide layer is provided with four silicon-titanium heterojunction sensing units with hexagonal prism-shaped cross sections, a metal edge A, a lead A, a metal sheet A, an electrode A and an aluminum terminal A; each silicon-titanium heterojunction sensing unit comprises an inner silicon A, an intermediate titanium and an outer silicon A which are nested in sequence from inside to outside, wherein an outer silicon-titanium heterojunction is arranged at the junction of the outer silicon A and the intermediate titanium, and an inner silicon-titanium heterojunction is arranged at the junction of the intermediate titanium and the inner silicon A; the two ends of the silicon-titanium heterojunction sensing unit are provided with metal edges A, each metal edge A is connected with a metal sheet A through a lead A, the metal sheet A is connected with an aluminum terminal A through an electrode A led out from the metal sheet A, and all structures arranged on the lower surface of the insulating silicon dioxide layer form a sensitive device layer A;
the giant piezoresistance pressure sensor with the low pressure range is a silicon gallium heterojunction pressure sensor; the silicon gallium heterojunction pressure sensor is sequentially provided with a sapphire substrate layer, a vacuum cavity, a sensitive device layer B, an insulating silicon dioxide layer and a silicon stress film top layer without bending and stretching from bottom to top; the lower surface of the insulating silicon dioxide layer is provided with four silicon gallium heterojunction sensing units with cylindrical sections, a metal edge B, a lead B, a metal sheet B, an electrode B and an aluminum terminal B; each silicon gallium heterojunction sensing unit comprises an inner silicon B, an intermediate layer gallium and an outer silicon B which are nested in sequence from inside to outside, wherein an outer silicon gallium heterojunction is arranged at the junction of the outer silicon B and the intermediate layer gallium, and an inner silicon gallium heterojunction is arranged at the junction of the intermediate layer gallium and the inner layer silicon B; the two ends of the silicon gallium heterojunction sensing unit are provided with metal edges B, each metal edge B is connected with a metal sheet B through a lead wire B, the metal sheet B is connected with an aluminum terminal B through an electrode B led out of the metal sheet B, and all structures arranged on the lower surface of the insulating silicon dioxide layer form a sensitive device layer B.
2. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 1, wherein: the high-pressure range giant piezoresistive pressure sensor and the low-pressure range giant piezoresistive pressure sensor are both arranged in a square container, one side of the square container is provided with a guide pipe, silicone oil is filled in the guide pipe, and the top of the guide pipe is provided with a filter.
3. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 2, wherein: the square container is made of silicon nitride.
4. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 1, wherein: the power supply comprises a reference voltage source, an analog power supply and a digital power supply; the reference voltage source is connected with the high-pressure range giant piezoresistive pressure sensor and the low-pressure range giant piezoresistive pressure sensor to supply power to the high-pressure range giant piezoresistive pressure sensor; the analog power supply is connected with the signal processing circuit and supplies power to the signal processing circuit; the digital power supply is connected with the analog-digital converter and the singlechip to supply power for the analog-digital converter and the singlechip.
5. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 1, wherein: the signal processing circuit comprises a voltage amplifying circuit and a low-pass filter; the voltage amplifying circuit and the low-pass filter amplify and filter and denoise the signals.
6. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 1, wherein: the top layer of the silicon stress film is provided with a prismatic table.
7. The downhole pressure detection device based on double giant piezoresistive sensors according to claim 1, wherein: the analog-to-digital converter adopts an AD7671 analog-to-digital converter; the model of the singlechip is STM32F103VET6; the wireless communication module is a LORA module.
8. The method for measuring the underground pressure detection device based on the double giant piezoresistive sensor, which is applied to the underground pressure detection device based on the double giant piezoresistive sensor according to any one of claims 1 to 7, is characterized in that: the pressure detection device is provided with a positioning module, the underground depth of the sensor is obtained through the positioning module, when the sensor is positioned at the underground depth of 1000 meters or more, the silicon gallium heterojunction giant piezoresistive pressure sensor is selected by the multiplexer to measure, and when the sensor is positioned at the underground depth of 1000 meters or less, the silicon titanium heterojunction giant piezoresistive pressure sensor is selected by the multiplexer to measure; the singlechip transmits the data to the wireless communication module, the wireless communication module sends the data back to the mobile phone APP, the underground pressure data is measured, and finally the measured data of the two measuring ranges are combined to form integral data of 0.1-800MPa composite measuring range.
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