CN108572738A - Key input apparatus - Google Patents
Key input apparatus Download PDFInfo
- Publication number
- CN108572738A CN108572738A CN201711261103.3A CN201711261103A CN108572738A CN 108572738 A CN108572738 A CN 108572738A CN 201711261103 A CN201711261103 A CN 201711261103A CN 108572738 A CN108572738 A CN 108572738A
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- China
- Prior art keywords
- magnetic
- magnetic field
- base material
- face
- key top
- Prior art date
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- 230000005291 magnetic effect Effects 0.000 claims abstract description 268
- 239000000463 material Substances 0.000 claims abstract description 99
- 238000001179 sorption measurement Methods 0.000 claims abstract description 81
- 239000000696 magnetic material Substances 0.000 claims abstract description 13
- 230000004907 flux Effects 0.000 claims description 26
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 66
- 239000010410 layer Substances 0.000 description 42
- 230000008859 change Effects 0.000 description 32
- 230000005415 magnetization Effects 0.000 description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000005290 antiferromagnetic effect Effects 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
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- 230000005611 electricity Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 210000003811 finger Anatomy 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 210000004932 little finger Anatomy 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 210000003813 thumb Anatomy 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 241001640034 Heteropterys Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017028 MnSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 238000010992 reflux Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
- G06F3/0202—Constructional details or processes of manufacture of the input device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/965—Switches controlled by moving an element forming part of the switch
- H03K17/97—Switches controlled by moving an element forming part of the switch using a magnetic movable element
- H03K17/972—Switches controlled by moving an element forming part of the switch using a magnetic movable element having a plurality of control members, e.g. keyboard
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H13/00—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
- H01H13/02—Details
- H01H13/12—Movable parts; Contacts mounted thereon
- H01H13/14—Operating parts, e.g. push-button
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H13/00—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
- H01H13/70—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard
- H01H13/702—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches
- H01H13/705—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches characterised by construction, mounting or arrangement of operating parts, e.g. push-buttons or keys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2221/00—Actuators
- H01H2221/036—Return force
- H01H2221/04—Return force magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2221/00—Actuators
- H01H2221/046—Actuators bistable
- H01H2221/048—Actuators bistable magnetic
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Push-Button Switches (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
Abstract
The present invention relates to key input apparatus.Key input apparatus has：Key top, being capable of lifting moving by pressing operation；The first base material has the first face positioned at key top side and second face opposite with first face, supports key top and is configured to the lifting moving together with key top；Second base material is set between the key top and the first base material on the lifting moving direction of key top, has the first face positioned at the first base material side and second face opposite with first face；Magnetic field generation section；Magnetic Sensor portion, it includes the magnetic detecting elements detected from the magnetic field that magnetic field generation section generates；Adsorption section, it is made of the soft magnetic material for capableing of adsoption-magnetic field generating unit, either one in the first face of the first base material and the first face of the second base material is provided with Magnetic Sensor portion and adsorption section, and magnetic field generation section is provided in a manner of opposite with adsorption section in another party.
Description
Technical field
The present invention relates to the key input apparatus for having used Magnetic Sensor.
Background technology
In the various electronic equipments such as the personal digital assistant devices such as mobile phone, PDA, electronic dictionary, laptop, make
For the device for inputting the information such as word, number, mark, generally use to be arranged with the keyboard of multiple key tops (key top)
For the key input apparatus of representative.
Currently, the keyboard as laptop, for example, rubber made of rubber dot is arranged using in the underface of key top
Glue ring-dot type keyboard.In rubber ring-dot type keyboard, when user presses key top, be located at key top immediately below rubber dot by by
Under.It is electrically connected in thin film circuit as a result, and signal corresponding with the key top pressed by user is input into notebook electricity
The electronic equipments such as brain.
In recent years, with the process of the miniaturization of electronic equipment, slimming, main positions are placed on the slimming of keyboard
Exploitation energetically carries out.In order to make above-mentioned rubber ring-dot type keyboard be thinned, the thickness that rubber dot is thinned is considered.But
It is that, if the thickness of rubber dot is thinned, the Buckling that will produce rubber dot is deteriorated and gives the click feel drop of user
Low this problem.Therefore, in rubber ring-dot type keyboard, there is restriction in the development being further thinned.
As the key input apparatus for the purpose of slimming, currently, proposing there is the magnetoresistance for having and being set on substrate
Element and multiple magnet, are embedded in supporting mass the supporting mass being made of the elastic material of covering magneto-resistance effect element and magnet
Ferromagnetic body input unit (referring to patent document 1).In the input unit, by by the poles N of magnet and the poles S alternately
It configures and forms zero field region on substrate, magneto-resistance effect element is configured in zero field region on substrate, with iron
The mode that magnetic substance is located at the surface of magneto-resistance effect element is provided with supporting mass.Moreover, when ferromagnetic body passes through supporting mass
When operating and carrying out displacement, then the distribution to the magnetic field intensity on substrate brings variation, the resistance value of magneto-resistance effect element according to
The variation of the distribution of the magnetic field intensity and change.
In addition, as the input unit for having used magnetic detecting element and magnet, proposition, which has, to be had spaced at intervals and sets
Be placed in two on substrate magnet, the MR elements that are set in a manner of being held on two magnet on substrate, can on MR elements
The input unit of the soft-magnetic body configured with displacement (with reference to patent document 2).In the input unit, from the magnetic field that magnet generates
Intensity change because of the displacement of soft-magnetic body, as a result, MR elements resistance value generate variation.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2013-131040 bulletins
Patent document 2：Japanese Unexamined Patent Application Publication 2008-515043 bulletins
In the input unit that patent document 1 and 2 is recorded, in order to realize magnetic detecting element (magneto-resistance effect element, MR elements
Deng) resistance change, by changing the distance of magnetic material (ferromagnetic body or soft-magnetic body) and magnet, and change is from magnetic
Iron is induced to the magnetic flux of magnetic material.According to such input unit, although the sensitivity depending on magnetic detecting element,
Even if the variable quantity of magnetic material and the distance of magnet is relatively small, the resistance value of magnetic detecting element can also be changed.Therefore,
It, can also be into the defeated of row information even if the intrusion (path increment) of key top is smaller than the existing input unit for having used rubber dot
Enter, the slimming of input unit (keyboard) may be implemented.
In addition, in the electronic equipment for having used this input unit, suitably sets and become with the resistance value of magnetic detecting element
Change corresponding threshold value, according to the output of the resistance change based on magnetic detecting element and the threshold value, from input unit output and quilt
The corresponding signal of key top of indentation, therefore can be changed by the setting for the threshold value that user is carried out by easily customize key top
Relational, i.e. input unit the operability that intrusion (path increment) and input judge.
But in the input unit that patent document 1 and 2 is recorded, changed from magnet by making magnetic material displacement
It is directed to the magnetic flux of magnetic detecting element, but the distance of magnet and magnetic detecting element is fixed.Therefore, the resistance value of magnetic detecting element
The absolute magnitude (amplitude of resistance change) of variation is smaller, exists and is difficult to realize to meet to the operability different because of user
It is required that customization etc. problem.
In order to increase magnetic detecting element resistance change absolute magnitude, consider by being capable of maximum bys being arranged magnetic screen etc.
Utilize from the magnetic field that magnet generates or relative increase to limit the volume of magnet.But if setting magnetic screen etc. or relatively
Increase the volume of magnet, then becomes extremely difficult this problem in the presence of the further slimming of realization key input apparatus.
Invention content
In view of the above subject, the resistance value based on magnetic detecting element can be increased the object of the present invention is to provide a kind of
The absolute magnitude of the output variation of variation and the key input apparatus that slimming may be implemented.
In order to solve the above problems, the present invention provides a kind of key input apparatus, which is characterized in that has：Key top passes through
Pressing operation and being capable of lifting moving；The first base material has positioned at the first face of the key top side and opposite with first face
The second face, support the key top, and be configured to the lifting moving together with the key top；Second base material, is set to
Between the key top and the first base material on the lifting moving direction of the key top, have positioned at the first base material side
First face and second face opposite with first face；Magnetic field generation section；Magnetic Sensor portion, it includes detections to generate from the magnetic field
The magnetic detecting element in the magnetic field that portion generates；Adsorption section, the soft magnetic material by that can adsorb the magnetic field generation section are constituted,
Either one in first face of the first base material and first face of second base material is provided with the magnetic sensing
Device portion and the adsorption section are provided with the magnetic field generation section in another party in a manner of opposite with the adsorption section.
The key input apparatus of the present invention can also be that the magnetic field generation section is set to described the first of the first base material
On face, the Magnetic Sensor portion and the adsorption section are set on first face of second base material, can also be, described
Magnetic field generation section is set on first face of second base material, and the Magnetic Sensor portion and the adsorption section are set to institute
It states on first face of the first base material.
Preferably, the sense magnetic direction of the magnetic detecting element is substantially orthogonal with the lifting moving direction of the key top
Direction, the magnetic field generation section can generate the magnetic field in the direction substantially orthogonal with the lifting moving direction of the key top.
Preferably, the magnetic field generation section can generate the side substantially orthogonal with the sense magnetic direction of the magnetic detecting element
To magnetic field, can also be that, in the vertical view of the key input apparatus, two magnetic field generation sections are with by the Magnetic Sensor
Portion is sandwiched in mode therebetween and is arranged relative to each other, and described two magnetic field generation sections can generate the side being generally parallel to each other respectively
To magnetic field, can also be the magnetic field that can generate mutual substantially opposite parallel direction.It the Magnetic Sensor portion can also be also
Including bias magnetic field generating unit, the bias magnetic field generating unit can apply and the magnetic detecting element to the magnetic detecting element
The substantially orthogonal direction of sense magnetic direction bias magnetic field, can also be set to from the center between described two magnetic field generation sections
Deviate the position of (offset) in position.
Preferably, the adsorption section imports the magnetic flux from the magnetic field generation section as to the magnetic detecting element
Yoke and play a role, and preferably, be provided with the magnetic field generation section in the first base material and second base material
Base material be made of non-magnetic material.
Preferably, the key top is directed away from the direction of second base material and is exerted a force, can also be in first base
Second surface side of material is provided with force application part, and the force application part is directed away from the key top side of second base material
To force, the first base material can also be the force section for the direction force that second base material is directed away to the key top
Part.
Preferably, multiple key tops configure side by side, and be there is to produce from the magnetic field corresponding with multiple key tops
Life portion, the magnetic detecting element, the adsorption section and the force application part, the force corresponding with the multiple key top
The active force of component is different according to the position of the key top.
GMR element or TMR elements can be used as the magnetic detecting element.
According to the present invention it is possible to provide the absolute of the output variation that can increase the resistance change based on magnetic detecting element
Measure and may be implemented the key input apparatus of slimming.
Description of the drawings
Fig. 1 is the vertical view for the outline structure for indicating the keyboard involved by the first embodiment of the present invention；
Fig. 2 is the enlarged fragmentary cross section for the outline structure for indicating the keyboard involved by the first embodiment of the present invention；
Fig. 3 is the enlarged fragmentary cross section for the state for indicating that a key top of keyboard shown in Fig. 2 is pressed；
Fig. 4 is the stereogram of the outline structure of the key top in the first embodiment for indicate the present invention；
Fig. 5 is the sectional view of the outline structure of the key top in the first embodiment for indicate the present invention；
Fig. 6 is the sectional view of the outline structure of the first base material in the first embodiment for indicate the present invention；
Fig. 7 is the sectional view of the outline structure of the second base material in the first embodiment for indicate the present invention；
Fig. 8 is from the vertical view of the keyboard in the first embodiment of the present invention from the second surface side of the first base material；
Fig. 9 is that the part of the outline structure in the Magnetic Sensor portion and adsorption section in the first embodiment for indicate the present invention is put
Big vertical view；
Figure 10 is the block diagram of the outline structure in the Magnetic Sensor portion in the first embodiment for indicate the present invention；
Figure 11 is the stereogram of the outline structure of the TMR elements in the first embodiment for indicate the present invention；
Figure 12 is the sectional view of the outline structure of the TMR elements in the first embodiment for indicate the present invention；
Figure 13 is the magnetic sensor element electricity in the Magnetic Sensor portion in the first embodiment of the present invention that schematically shows
The circuit diagram of the composition on road；
Figure 14 is the outline structure of the Magnetic Sensor portion in second embodiment of the present invention of indicating, magnet and adsorption section
Partly enlarged top view；
Figure 15 is the other modes of the Magnetic Sensor portion in second embodiment of the present invention of indicating, magnet and adsorption section
The partly enlarged top view of outline structure；
Figure 16 A and Figure 16 B are preferably configuring for the Magnetic Sensor portion in mode shown in figure 15 of schematically showing
Partly enlarged top view；
Figure 17 is the outline structure for the other modes for indicating the keyboard involved by first and second embodiment of the present invention
Enlarged fragmentary cross section；
Figure 18 is the side view of the model used in the simulation that schematically shows in Examples 1 to 3.
The explanation of symbol
1 ... keyboard (key input apparatus)
2 ... key tops
3 ... the first base materials
31 ... first faces
32 ... second faces
4 ... second base materials
41 ... first faces
42 ... second faces
5 ... magnet (magnetic field generation section)
6 ... force application parts
7 ... adsorption sections
8 ... Magnetic Sensor portions.
Specific implementation mode
With reference to attached drawing, embodiments of the present invention will be described.
[first embodiment]
Fig. 1 is the vertical view for the outline structure for indicating the keyboard involved by first embodiment, and Fig. 2 is to indicate the first implementation
The enlarged fragmentary cross section of the outline structure of the keyboard of mode, Fig. 3 are to indicate that a key top of keyboard shown in Fig. 2 is pressed
The enlarged fragmentary cross section of state, Fig. 4 are the stereograms of the outline structure for the key top for indicating first embodiment, and Fig. 5 is to indicate
The sectional view of the outline structure of the key top of first embodiment, Fig. 6 are the outline knots for the first base material for indicating first embodiment
The sectional view of structure, Fig. 7 are to indicate that the outline structure of the second base material of first embodiment is sectional view, and Fig. 8 is from the first base material
The second surface side observation the present invention first embodiment keyboard vertical view, Fig. 9 be indicate first embodiment magnetic pass
The partly enlarged top view of the outline structure in sensor portion and adsorption section.
As shown in Fig. 1~Fig. 9, the keyboard 1 involved by first embodiment is the keyboard of PC, is had：Side by side
Multiple key tops 2 of configuration, the first base material 3 for supporting each key top 2, the second base material 4 between key top 2 and the first base material 3.
The key top 2 that can be made of resin etc. has the base portion 21 of press surface 22, is set to the pressing with base portion 21
4 column portions 24 of the opposite opposite face 23 in face 22 (with reference to Fig. 5).Key top 2 is supported via 4 column portions 24 by the first base material 3.When
When pressing press surface 22, key top 2 is mobile in lifting direction (upper and lower directions in Fig. 2 and Fig. 3).The range amount of key top 2 by
Length L between the opposite face 23 of the base portion 21 of key top 2 and the second base material 4 is defined.That is, by the length and in 4 column portions 24
The thickness of two base materials 4 determines the range amount of key top 2.
The first base material 3 has the first face 31 and second face 32 opposite with the first face 31 positioned at 2 side of key top, in the first face
Specified interval is separated on 31 is provided with two magnet 5 (with reference to Fig. 6) as magnetic field generation section.The size of magnet 5 is not special
It limits, for example, can be set as 3~6mm × 1~3mm or so.The thickness of magnet 5 is also not particularly limited, for example, can set
It is set to 0.5~2mm or so.
In the second face 32 of the first base material 3, it is provided with the 6 (reference of force application part that the first base material 3 exerts a force to 2 side of key top
Fig. 2, Fig. 3).By the way that the force application part 6 is arranged, in downward direction (towards the second base material 4 by user press...withes one's finger lower key top 2
The direction of side) it is mobile, later, finger is taken away and 2 upward direction of key top is made to move, original position can be returned to.As applying
Power component 6, as long as the component that the first base material 3 can be exerted a force towards 2 side of key top, it is, for example, possible to use leaf spring, rubber etc.
Elastic material etc..
In the first embodiment, the active force for being set to the force application part 6 in the second face 32 of each the first base material 3 each other may be used
With identical, can also be different.In the case of the active force difference for making each force application part 6, for example, it is preferable to positioned at keyboard 1
Second face 32 of the 2 corresponding the first base material 3 of key top near the both ends of length direction (left and right directions in Fig. 1), is provided with work
Firmly relatively small force application part 6, in the second face of the first base material corresponding with the key top 2 near the center of keyboard 13
32, it is provided with the relatively large force application part of active force 6.In general, the key near the both ends of the length direction of keyboard 1
Top 2 is pressed by the little finger of toe of user, and the key top 2 near the center of keyboard 1 is pressed by the thumb or index finger of user.
The pressing force that little finger of toe is pressed is mostly smaller than the pressing force that thumb or index finger are pressed.Therefore, by by with positioned at the length side of keyboard 1
To both ends near the active force of force application part 6 that is correspondingly arranged of key top 2 be set as relatively small, even if passing through pressing force phase
When pressing key top 2 to smaller little finger of toe, also can reliably it input.
Force application part 6 can also be fixed on the second face 32 of the first base material 3, but be preferably installed and be easy to remove or can be more
It changes.By being mounted to force application part 6 to be easy to carry out replacement, user, which can inherently be replaced with to have, meets the uncommon of user
The force application part 6 of the active force of prestige.
As the first base material 3, it is, for example, possible to use be made of non-magnetic materials such as resin, phosphor bronze, stainless steel, aluminium
Substrate.The thickness of the first base material 3 is not particularly limited, as long as can support key top 2 and can get required durability
Degree.
The second base material 4 between key top 2 and the first base material 3 have positioned at 3 side of the first base material the first face 41 and with
The second opposite face 42 of first face 41 (with reference to Fig. 7).4 column portions, the 24 respective pine being formed on the second base material 4 for key top 2 is matched
Close the through hole 43 that ground is inserted into.On the first face 41 of the second base material 4, be arranged in a manner of corresponding with each key top 2 there are two inhale
Attached portion 7 and Magnetic Sensor portion 8, two adsorption sections 7 are in the lifting moving direction of key top 2, with two 5 respective parts of magnet
The mode of overlapping is opposite, which is located between two adsorption sections 7 (with reference to Fig. 8).
Magnetic Sensor portion 8 has the Magnetic Sensor of the variation based on the magnetic field formed by magnet 5 and output sensor signal S
The components Department 8A and test section 8B (Figure 10 references) that electric signal is exported based on sensor signal S.Magnetic sensor element portion 8A packets
Include magnetic detecting element.Magnetic detecting element is preferably used in the direction substantially orthogonal with the lifting moving direction of key top 2, i.e. the second base
Direction has the element of sense magnetic direction in the face of material 4, it is, for example, possible to use GMR element, TMR elements etc..
Adsorption section 7 material of the magnetic-adsorption of magnet 5 magnet 5 by can be made up of.Pass through the absorption of the adsorption section 7
Power can assign user resistance sense when pressing key top 2, click feel i.e. appropriate.
The adsorption section 7 that can be made of soft magnetic materials such as permalloy, electromagnetic steel, permendures (permendur)
Including：Closer to Magnetic Sensor portion 8, the first adsorption section 71 that width more becomes narrow gradually and it is spaced apart with the first adsorption section 71
Specified interval and the second adsorption section 72 being arranged (with reference to Fig. 9).Second adsorption section 72 includes the end (position with the first adsorption section 71
End in the side away from Magnetic Sensor portion 8 farther out) opposite protrusion 721 and by consecutive ring-type between two protrusions 721
Portion 722.Adsorption section 7 is with the protrusion 721 of the end of the first adsorption section 71 and the second adsorption section 72 in the lifting moving direction of key top 2
The mode opposite with magnet 5 is arranged.Have by the first adsorption section 71 of the adsorption section 7 for making to be made of soft magnetic material such
Shape, adsorption section 7 can play a role as the yoke that the magnetic flux generated by magnet 5 is efficiently directed into Magnetic Sensor portion 8.This
Sample is played a role by making adsorption section 7 be used as yoke, Magnetic Sensor portion 8 and magnet 5 can be made to space out, so playing magnetic
Sensor portion 8 is not easily susceptible to the effect of the influence of the stray field from magnet 5.In addition, because of (first and second absorption of adsorption section 7
72) portion 71 has above-mentioned shape, to be connect in the end of magnet 5 with the first adsorption section 71 and the protrusion 721 of the second adsorption section 72
When touching, the second adsorption section 72 is played the role of as reflux yoke, by 72 structure of the first adsorption section 71, magnet 5 and the second adsorption section
At closed magnetic circuit, so the magnetic influence that adjacent key is brought in the magnetic field formed by magnet 5 can be reduced.
The end (the direction end opposite with Magnetic Sensor portion 8 in the face of the second base material 4) of first adsorption section 71 and magnetic
Length between the end (the opposite end in direction and adsorption section 7 in the face of the second base material 4) of sensor portion 8 does not limit especially
It is fixed, for example, may be set to 0~2mm or so.
As shown in figure 11, the TMR elements that magnetic sensor element portion 8A has have multiple lower part lead electrodes 91, multiple
TMR laminated bodies 80, multiple upper lead wire electrodes 92.Lower part lead electrode 91 and upper lead wire electrode 92 for example by Cu, Al, Au,
The composite membrane of a kind of conductive material or two or more conductive materials in Ta, Ti etc. is constituted, and thickness is respectively 0.3~2.0 μ
M or so.
Multiple lower part lead electrodes 91 are set on substrate (not shown).Multiple lower part lead electrodes 91 are respectively provided with elongated
Substantially rectangular shape, with the multiple TMR laminated bodies 80 for being arranged in array-like be electrically coupled adjacent on direction two under
The mode with specified gap is arranged between portion's lead electrode 91.Divide near the both ends of the length direction of lower part lead electrode 91
It is not provided with TMR laminated bodies 80.That is, being respectively set in multiple lower part lead electrodes 91, there are two TMR laminated bodies 80.
As shown in figure 12, the TMR laminated bodies 80 of first embodiment have the fixed magnetization fixed layer 83 of the direction of magnetization, magnetic
Change direction changed according to the direction in the magnetic field applied free layer 81, be configured between magnetization fixed layer 83 and free layer 81
Nonmagnetic layer 82, antiferromagnetic layer 84.
TMR laminated bodies 80 have stacks gradually free layer 81, nonmagnetic layer 82, magnetization admittedly from 91 side of lower part lead electrode
The construction of given layer 83 and antiferromagnetic layer 84.Free layer 81 is electrically connected with lower part lead electrode 91, antiferromagnetic layer 84 and top
Lead electrode 92 is electrically connected.As constituting the material of free layer 81 and magnetization fixed layer 83, for example, enumerate NiFe, CoFe,
CoFeB、CoFeNi、Co2MnSi、Co2MnGe、FeOX(oxide of Fe) etc..The thickness of free layer 81 and magnetization fixed layer 83 point
It Wei not 1~10nm or so.
Nonmagnetic layer 82 is tunnel barrier layer, is for making TMR laminated bodies 80 show tunnel magneto-resistance effect (TMR effects)
Necessary film.As the material for constituting nonmagnetic layer 82, Cu, Au, Ag, Zn, Ga, TiO may be exemplifiedX、ZnO、InO、SnO、
GaN, ITO (Indium Tin Oxide (tin indium oxide)), Al2O3, MgO etc..Nonmagnetic layer 82 can also be by two layers or more of layer
Folded film is constituted.For example, nonmagnetic layer 82 can displace the Cu/ZnO/ of a Cu by this trilaminate film of Cu/ZnO/Cu or with Zn
This trilaminate film of Zn is constituted.In addition, the thickness of nonmagnetic layer 82 is 0.1~5nm or so.
Antiferromagnetic layer 84 is for example by including at least one of the group selected from Pt, Ru, Rh, Pd, Ni, Cu, Ir, Cr and Fe
The antiferromagnetic materials of element and Mn are constituted.The content of Mn in the antiferromagnetic materials is, for example, 35~95 atom % or so.
The antiferromagnetic layer 84 being made of antiferromagnetic materials plays magnetic by spin-exchange-coupled between magnetization fixed layer 83
Change the fixed effect in magnetized direction of fixed bed 83.
Multiple upper lead wire electrodes 92 are set on multiple TMR laminated bodies 80.Each upper lead wire electrode 92 has elongated
Substantially rectangular shape.Upper lead wire electrode 92 is configured to, in the side of being electrically coupled for the multiple TMR laminated bodies 80 for being arranged in array-like
There is specified gap between two adjacent upper lead wire electrodes 92 upwards, and multiple TMR laminated bodies 80 are connected in series with, by phase
The antiferromagnetic layer 84 of two adjacent TMR laminated bodies 80 is electrically connected to each other.In addition, TMR laminated bodies 80 can also have from lower part
It rises to stack gradually and be tied made of antiferromagnetic layer 84, magnetization fixed layer 83, nonmagnetic layer 82 and free layer 81 in 91 side of lead electrode
Structure.In addition, can also have cap rock (protective layer) between free layer 81 and lower part lead electrode 91 or upper lead wire electrode 92.
In TMR laminated bodies 80, magnetic of the resistance value according to the magnetized direction of free layer 81 relative to magnetization fixed layer 83
The direction angulation of change and change, when which is 0 ° (the mutual direction of magnetization is parallel), resistance value is minimum, which is
When 180 ° (mutual direction of magnetization rather parallel), resistance value is maximum.
As shown in Figure 10 and Figure 13, magnetic sensor element electricity of the magnetic sensor element portion 8A with output sensor signal S
Road C1, test section 8B export electric signal based on the sensor signal S exported from magnetic sensor element circuit C1.
Magnetic sensor element circuit C1 includes at least a TMR element, can also include a pair of of TMR members being connected in series with
Part.In this case, magnetic sensor element circuit C1 has the Wheatstone bridge electricity including a pair of of the TMR elements being connected in series with
Road.
As shown in figure 13, the Wheatstone bridge circuit C11 that magnetic sensor element circuit C1 has includes：Power port V11,
Grounding ports G11, it two output port E111, E112, first a pair of TMR elements R111, R112 being connected in series with, is connected in series with
Second a pair of TMR elements R113, R114.Each one end of TMR elements R111, R113 are connect with power port V11.TMR elements
The other end of R111 is connect with one end of TMR elements R112 and output port E111.The other end of TMR elements R113 and TMR members
One end of part R114 is connected with output port E112.Each other end of TMR elements R112, R114 are connect with grounding ports G11.
Power port V11 is applied in the supply voltage of prescribed level, and grounding ports G11 is connect with ground wire.In the first embodiment, make
All TMR elements R111 for using above-mentioned TMR elements (1 and Figure 12 referring to Fig.1) to be included as Wheatstone bridge circuit C11
~R114.
In fig. 13, the direction of magnetization of the magnetization fixed layer 83 of TMR elements R111~R114 is indicated with filling arrow.In magnetic
In sensor element circuit C1, the direction of magnetization of the magnetization fixed layer 83 of TMR elements R111~R114 is parallel with first direction D1,
The magnetic of the direction of magnetization of the magnetization fixed layer 83 of TMR elements R111, R114 and the magnetization fixed layer 83 of TMR elements R112, R113
Change direction phase rather parallel direction each other.
In the magnetic sensor element circuit C1 of magnetic sensor element portion 8A, the potential difference root of output port E111, E112
Change according to the variation in the magnetic field generated by magnet, with output port E111, the corresponding sensor signal S of potential difference of E112 is certainly
Difference detector 113 is exported to test section 8B.In test section 8B, it is being judged as that sensor signal S is more than the feelings of defined threshold value
Under condition, then electric signal is exported.
In the keyboard 1 with above-mentioned structure, the first base material 3 is arranged at the force application part 6 in the second face 32 to key top 2
Side pushes away, and the magnet 5 being set on the first face 31 of the first base material 3 is arranged at the adsorption section 7 on the first face 41 of the second base material 4
Absorption.In this state, in Magnetic Sensor portion 8, maximum magnetic flux is imported into via the adsorption section 7 worked as yoke.
When pressing the press surface 22 of key top 2 by user from the state, key top 2 is pressed, and links therewith, the first base material
3 are pressed.Before the press surface 22 of pressing key top 2, since 5 adsorbed portion 7 of magnet is adsorbed, so by key top 2
The pressing of press surface 22 and when pressing key top 2, by the adsorption capacity of the active force and adsorption section 7 of force application part 6, user is assigned
Defined resistance sense.That is, click feel as defined in capable of being assigned to user.
When the linkage of pressing with key top 2, when the first base material 3 is pressed, the magnetic that is set on the first face 31 of the first base material 3
Iron 5 also move downwardly together with the first base material 3 by direction.The distance in magnet 5 and Magnetic Sensor portion 8 becomes larger as a result, as a result, leading
The magnetic flux for entering Magnetic Sensor portion 8 generates variation, and the resistance value of magnetic detecting element generates variation.
It can be seen that from aftermentioned embodiment the keyboard 1 with as involved by first embodiment, by making magnet 5
With the distance change in Magnetic Sensor portion 8 and so that the distance of the adsorption section 7 and Magnetic Sensor portion 8 that are made of soft magnetic material is generated change
The case where change, is compared, and the resistance change amount of magnetic detecting element can be increased.And hence it is also possible to reduce the volume of magnet 5, to
It can be easily implemented the slimming of keyboard 1.
In this way, the keyboard 1 involved by according to first embodiment, can be increased based on the resistance change of magnetic detecting element
The absolute magnitude of output variation from magnetic sensor element portion 8A greatly, it is possible to realize the slimming of keyboard 1.
In addition, the keyboard 1 involved by according to first embodiment, because the resistance change of magnetic detecting element can be increased
Amount meets keyboard operational desired by user so as to increase the customizable width of user so can design and have
1。
[second embodiment]
Keyboard involved by second embodiment is illustrated.Figure 14 is the Magnetic Sensor for indicating second embodiment
The partly enlarged top view of the outline structure in portion, magnet and adsorption section, Figure 15 be the Magnetic Sensor portion for indicating second embodiment,
The partly enlarged top view of the outline structure of the other modes of magnet and adsorption section.In addition, involved by second embodiment
In keyboard, identical symbol is attached to for structure same with the keyboard involved by first embodiment, and it is detailed to omit its
Explanation.
Keyboard 1 involved by second embodiment has and first embodiment in addition to magnet 5 and the structure of adsorption section 7
The substantially same structure of involved keyboard 1.Therefore, it is illustrated centered on the structure of magnet 5 and adsorption section 7.
As shown in Figure 14 and Figure 15, in this second embodiment, the magnet 5 of the first base material 3 is set to when looking down to incite somebody to action
Magnetic Sensor portion 8 is sandwiched in mode therebetween and is arranged, but so that magnet 5 the poles N and the poles S towards with Magnetic Sensor portion 8 and two magnetic
The mode in the orthogonal direction of the parallel direction (transverse direction in Figure 14 and Figure 15) of iron 5 (longitudinal direction in Figure 14 and Figure 15) is arranged.Two
The direction of magnetization (in Figure 14 and Figure 15, indicating the direction of arrow on magnet 5) of a magnet 5 be with above-mentioned parallel direction just
The direction of friendship, can be seen that as a result, from aftermentioned embodiment contacted with adsorption section 7 in magnet 5 state (state adsorbed,
8 immediate state of magnet 5 and Magnetic Sensor portion) and magnet 5 from adsorption section 7 (Magnetic Sensor portion 8) detach in the state of, can
Make the direction change of the magnetic flux in importing Magnetic Sensor portion 8.For example, in the state that magnet 5 and adsorption section 7 contact, inhaled from first
The end (end opposite with Magnetic Sensor portion 8) in attached portion 71 imports magnetic flux to Magnetic Sensor portion 8, so the direction of the magnetic flux is
The parallel direction (transverse direction in Figure 14 and Figure 15) of Magnetic Sensor portion 8 and two magnet 5.On the other hand, in magnet 5 from adsorption section
In the state of 7 separation, the direction of the magnetic flux imported to Magnetic Sensor portion 8 be the direction orthogonal with above-mentioned parallel direction (Figure 14 and
Longitudinal direction in Figure 15).In this way, in this second embodiment, the state that is contacted with adsorption section 7 in magnet 5 and magnet 5 are from adsorption section
Under state the two states of 7 separation, that is, state the two states that the state and key top 2 not being pressed in key top 2 are pressed
Under, the direction change of the magnetic flux in importing Magnetic Sensor portion 8 can be made, so the input sensitivity in keyboard 1 can be improved.Cause
This, can increase the customized width of the operability about keyboard 1, can meet the behaviour to the keyboard 1 different because of user
The various requirement for the property made.
The poles N of two magnet 5 and the direction (direction of magnetization of magnet 5) of the poles S can be generally parallel to each other (referring to Fig.1 4),
Can also substantially opposite parallel (referring to Fig.1 5), but can be seen that from aftermentioned embodiment the magnetization side by making two magnet 5
To substantially opposite parallel, the resistance change amount of magnetic detecting element can be made to further increase.
In Figure 14 and mode shown in figure 15, Magnetic Sensor portion 8 is in the above-mentioned parallel direction (cross in Figure 14 and Figure 15
To) it is set to the middle position between two magnet 5.In mode shown in figure 15, if the central position between two magnet 5
Magnetic Sensor portion 8 is installed, then with the linkage of pressing of key top 2, the first base material 3 is pressed, and is set to the first face of the first base material 3
31 magnet 5 also with the first base material 3 downwardly together direction move when (when magnet 5 and Magnetic Sensor portion 8 detach), Magnetic Sensor portion
8 nearby essentially become the state in zero magnetic field.So, include in magnetic sensor element portion 8A magnetic detecting element (such as
TMR elements) free layer 81 the direction of magnetization it is uncertain, it is possible to from the signal of magnetic sensor element portion 8A output errors.
In order not to make this problem generate, in mode shown in figure 15, it is preferred that Magnetic Sensor portion 8 also has pair
The magnetic detecting element for including in magnetic sensor element portion 8A, can apply the bias magnetic field in the direction orthogonal with above-mentioned parallel direction
The bias magnetic fields generating unit such as rigid magnet (diagram is omitted).By making Magnetic Sensor portion 8 that there is bias magnetic field generating unit, even if magnetic
Iron 5 and Magnetic Sensor portion 8 detach, can also be by from biasing when Magnetic Sensor portion 8 nearby essentially becomes the state in zero magnetic field
The bias magnetic field that magnetic field generation section applies makes the direction of magnetization of the free layer 81 of magnetic detecting element (such as TMR elements) towards inclined
The direction in magnetic field is set, the signal from the 8A output errors of magnetic sensor element portion can be prevented.
In addition, as shown in Figure 16 A and Figure 16 B, further preferably Magnetic Sensor portion 8 is set to from the center between two magnet 5
Position C5-5The position C that (middle position in above-mentioned parallel direction) deviates to the parallel direction or orthogonal to that direction8.I.e.
When magnet 5 and Magnetic Sensor portion 8 being made to detach, Magnetic Sensor portion 8 will not nearby become zero the state in magnetic field, so Magnetic Sensor
The direction of magnetization of the free layer 81 for the magnetic detecting element (such as TMR elements) for including in components Department 8A towards fixed direction, from
And the signal from the 8A output errors of magnetic sensor element portion can be prevented.Deviation can be considered in the bias OF in Magnetic Sensor portion 8
Position C8Magnetic field intensity, flow direction etc. suitably set.
In keyboard 1 involved by second embodiment, by so that magnet 5 the poles N and the poles S towards with Magnetic Sensor portion
8 and two magnet 5 the orthogonal direction of parallel direction (transverse direction in Figure 14 and Figure 15) (longitudinal direction in Figure 14 and Figure 15) side
Formula is configured, and can be seen that from aftermentioned embodiment can be such that the resistance change amount of magnetic detecting element further increases, and
And the direction of the magnetic flux near Magnetic Sensor portion 8 can be changed when magnet 5 and adsorption section 7 contact and when separation.Therefore, according to
Keyboard 1 involved by second embodiment can be further increased based on the resistance change of magnetic detecting element and be sensed from magnetic
The absolute magnitude of the output variation of device components Department 8A, can improve input sensitivity, therefore the slimming of keyboard 1 may be implemented.
Embodiments described above is the mode recorded to make the present invention be readily appreciated that, is not intended to limit this
The mode of invention and record.Therefore, each important document disclosed in the above embodiment is comprising the technical scope for belonging to the present invention
The meaning of all design alterations or equivalent.
In first and second above-mentioned embodiment, enumerates and the second face 32 of the first base material 3 is provided with force application part 6
It is illustrated for mode, but the present invention is not limited to this mode, the first base material 3 can also be the base with force effect
Material.For example, as shown in figure 17, the first base material 3 can also be constructed in 32 side of the second face with spring, by exerting a force towards 2 side of key top
Leaf spring constitute.If it is such mode, then the number of components for constituting keyboard 1 can be reduced.
In first and second above-mentioned embodiment, enumerate in the first face 31 of the first base material 3 setting magnet 5, second
First face 41 of base material 4 is illustrated for being provided with the mode in adsorption section 7 and Magnetic Sensor portion 8, but the present invention does not limit
In this mode.For example, it can be arranged adsorption section 7 and Magnetic Sensor portion 8, second in the first face 31 of the first base material 3
The first face 41 setting magnet 5 of base material 4, the lifting moving linkage with key top 2, adsorption section 7 and Magnetic Sensor portion 8 and the first base material
3 carry out lifting moving together.
In first and second above-mentioned embodiment, enumerates and be illustrated for the keyboard 1 as key input apparatus, but
The present invention is not limited thereto.In addition, above-mentioned key input apparatus is also used as the threshold value with two level or more, according to key top 2
Intrusion and the switching device for exporting different signals.For example, it is also possible to which above-mentioned key input apparatus is applied to digital camera etc.
Shutter.
【Embodiment】
Hereinafter, enumerate embodiment etc. illustrates the present invention in further detail, but the present invention is not appointed by following embodiments etc.
What is limited.
(embodiment 1)
In distributed magnet 5 shown in Fig. 8, Magnetic Sensor portion 8 and the mode of adsorption section 7, as shown in figure 18, pass through simulation
And finding out makes magnet 5 be located at first position P1 (position of magnet 5 and the contact of adsorption section 7) and second position P2 (from magnetic
The magnetic flux of iron 5 is not imported into the position of the degree of adsorption section 7) when Magnetic Sensor portion 8 in magnetic flux density (T) and magnetic flux side
To.In this simulation, the material for constituting adsorption section 7 is set as permalloy, magnet 5 is set as neodium magnet, shown in Figure 18
Length (left and right directions (lateral length) D in Figure 18 between two magnet 5 in side view5-5It is set as 1mm, by magnet 5
It is sized to 6.6mm × 2mm × 0.5mm.Show the result in table 1.
(embodiment 2)
It is mode shown in Figure 14 by the configuration change of magnet 5, Magnetic Sensor portion 8 and adsorption section 7, in addition to this, and it is real
It applies example 1 similarly to operate, the sensing of magnetic when magnet 5 being made to be located at first position P1 and second position P2 is found out by simulation
The direction of magnetic flux density (T) and magnetic flux in device portion 8.Show the result in table 1.
(embodiment 3)
It is mode shown in figure 15 by the configuration change of magnet 5, Magnetic Sensor portion 8 and adsorption section 7, in addition to this, and it is real
It applies example 1 similarly to operate, the sensing of magnetic when magnet 5 being made to be located at first position P1 and second position P2 is found out by simulation
The direction of magnetic flux density (T) and magnetic flux in device portion 8.Show the result in table 1.
(comparative example 1)
The position of magnet 5 and adsorption section 7 is replaced in the mode shown in Figure 18, and two adsorption sections 7 is made to be sensed in magnetic
The top in device portion 8 is continuous and is similarly operated as an adsorption section 7 and embodiment 1, and being found out by simulation makes the adsorption section
The direction of magnetic flux density (T) and magnetic flux in the 7 Magnetic Sensor portion 8 when being located at first position P1 and second position P2.It will
As a result shown in table 1.
[table 1]
As shown in table 1, it can confirm in Examples 1 to 3, compared with comparative example 1, the resistance of magnetic detecting element can be increased
It is worth the absolute magnitude of variation.In addition, when being compared to embodiment 1 and embodiment 2 and embodiment 3, can be identified through makes magnet 5
The direction of magnetization is orthogonal with the parallel direction in Magnetic Sensor portion 8 and two magnet 5 (embodiment 2,3), is connect in magnet 5 and adsorption section 7
It can make the direction change of the magnetic flux near Magnetic Sensor portion 8 when touching and when separation.It can especially be identified through the magnetic of magnet 5
Change direction and be set as rather parallel (embodiment 3), the absolute magnitude of the resistance change of magnetic detecting element can be further increased.
If the direction of magnetization of two magnet 5 is set as rather parallel (embodiment 3), when magnet 5 and adsorption section 7 detach,
Magnetic Sensor portion 8 nearby essentially becomes the state in zero magnetic field, and the direction of magnetic flux can become directionless, but think to sense by magnetic
Device portion 8 has the bias magnetic fields generating unit such as rigid magnet, and Magnetic Sensor portion 8 is set to from the centre bit between two magnet 5
The position of deviation is set, the state for becoming zero magnetic field near Magnetic Sensor portion 8 in magnet 5 and the separation of adsorption section 7 can be eliminated
Situation.
Thus, it is believed that by the way that the direction of magnetization of two magnet 5 is set as rather parallel, Neng Gouzeng as in Example 3
The change rate of the magnetic flux density in Magnetic Sensor portion 8 is imported into when magnet 5 and adsorption section 7 contact and when separation greatly, and can be made
The direction of magnetic flux generates variation, so the input sensitivity of keyboard 1 can be greatlyd improve.Therefore, it can be appreciated that can increase
The customized width of operability about keyboard 1 can meet and be wanted to the various of operability of the keyboard 1 different because of user
It asks.
Claims (16)
1. a kind of key input apparatus, which is characterized in that
Have：
Key top, being capable of lifting moving by pressing operation；
The first base material has the first face positioned at the key top side and second face opposite with first face, supports the key
Top, and it is configured to the lifting moving together with the key top；
Second base material is set to the key top on the lifting moving direction of the key top and between the first base material, has
There are the first face positioned at the first base material side and second face opposite with first face；
Magnetic field generation section；
Magnetic Sensor portion, it includes the magnetic detecting elements detected from the magnetic field that the magnetic field generation section generates；And
Adsorption section, the soft magnetic material by that can adsorb the magnetic field generation section are constituted,
Either one in the first face of the first base material and first face of second base material is provided with the magnetic and passes
Sensor portion and the adsorption section are provided with the magnetic field generation section in another party in a manner of opposite with the adsorption section.
2. key input apparatus according to claim 1, which is characterized in that
The magnetic field generation section is set on first face of the first base material,
The Magnetic Sensor portion and the adsorption section are set on first face of second base material.
3. key input apparatus according to claim 1, which is characterized in that
The magnetic field generation section is set on first face of second base material,
The Magnetic Sensor portion and the adsorption section are set on first face of the first base material.
4. key input apparatus described in any one of claim 1 to 3, which is characterized in that
The sense magnetic direction of the magnetic detecting element is the direction substantially orthogonal with the lifting moving direction of the key top,
The magnetic field generation section can generate the magnetic field in the direction substantially orthogonal with the lifting moving direction of the key top.
5. key input apparatus according to claim 4, which is characterized in that
The magnetic field generation section can generate the magnetic field in the direction substantially orthogonal with the sense magnetic direction of the magnetic detecting element.
6. key input apparatus according to claim 5, which is characterized in that
In the vertical view of the key input apparatus, two magnetic field generation sections by the Magnetic Sensor portion to be sandwiched in side therebetween
Formula is arranged relative to each other,
Described two magnetic field generation sections can generate the magnetic field in the direction being generally parallel to each other respectively.
7. key input apparatus according to claim 5, which is characterized in that
In the vertical view of the key input apparatus, two magnetic field generation sections by the Magnetic Sensor portion to be sandwiched in side therebetween
Formula is arranged relative to each other,
Described two magnetic field generation sections can generate the magnetic field in mutual substantially opposite parallel direction respectively.
8. key input apparatus according to claim 7, which is characterized in that
The Magnetic Sensor portion further includes bias magnetic field generating unit, and the bias magnetic field generating unit can be to the magnetic detecting element
Apply the bias magnetic field in the direction substantially orthogonal with the sense magnetic direction of the magnetic detecting element.
9. key input apparatus according to claim 7, which is characterized in that
The Magnetic Sensor portion is set to the position deviateed from the middle position between described two magnetic field generation sections.
10. the key input apparatus according to any one of claims 1 to 3 and claim 5~9, which is characterized in that
The adsorption section plays work as the yoke for importing the magnetic flux from the magnetic field generation section to the magnetic detecting element
With.
11. according to any key input apparatus in claims 1 to 3 and claim 5~9, which is characterized in that
The base material for being provided with the magnetic field generation section in the first base material and second base material is made of non-magnetic material.
12. the key input apparatus according to any one of 1~3 and claim 5~9 described in claim, which is characterized in that
The direction that the key top is directed away from second base material is exerted a force.
13. key input apparatus according to claim 12, which is characterized in that
Second surface side of the first base material is provided with force application part, the force application part is directed away from second base
The direction of material exerts a force to the key top.
14. key input apparatus according to claim 12, which is characterized in that
The first base material is directed towards the force application part that the direction far from second base material exerts a force to the key top.
15. the key input apparatus according to claim 13 or 14, which is characterized in that
Multiple key tops configure side by side,
With the magnetic field generation section corresponding with multiple key tops, the magnetic detecting element, the adsorption section and institute
Force application part is stated,
The active force of the force application part corresponding from the multiple key top is different according to the position of the key top.
16. the key according to any one of claims 1 to 3, claim 5~9, claim 13 and claim 14 is defeated
Enter device, which is characterized in that
The magnetic detecting element is GMR element or TMR elements.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-046900 | 2017-03-13 | ||
| JP2017046900A JP6347338B1 (en) | 2017-03-13 | 2017-03-13 | Key input device |
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| Publication Number | Publication Date |
|---|---|
| CN108572738A true CN108572738A (en) | 2018-09-25 |
| CN108572738B CN108572738B (en) | 2021-05-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711261103.3A Active CN108572738B (en) | 2017-03-13 | 2017-12-04 | Key input device |
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|---|---|
| US (2) | US10135441B2 (en) |
| JP (1) | JP6347338B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6347338B1 (en) * | 2017-03-13 | 2018-06-27 | Tdk株式会社 | Key input device |
| US11152938B2 (en) * | 2019-04-30 | 2021-10-19 | Allegro Microsystems, Llc | Magnetic switch with toggle and de-bounce functionality |
| CN113810036B (en) * | 2020-06-15 | 2024-04-02 | 重庆达方电子有限公司 | Keyboard with keyboard body |
| DE102021119658A1 (en) | 2021-07-28 | 2023-02-02 | Preh Gmbh | Multifunctional input device with touch-sensitive input surface and control panel that is magnetically attached to the input surface and inductively coupled |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211991A (en) * | 1977-05-25 | 1980-07-08 | Regie Nationale Des Usines Renault | Magnet-controlled switch |
| JP2010257638A (en) * | 2009-04-22 | 2010-11-11 | Alps Electric Co Ltd | Switch device |
| CN103578829A (en) * | 2012-07-26 | 2014-02-12 | 阿尔卑斯电气株式会社 | Key input device |
| CN104316594A (en) * | 2014-11-16 | 2015-01-28 | 吉林大学 | Electromagnetic nondestructive testing device for defects of steel |
| CN204167161U (en) * | 2014-08-26 | 2015-02-18 | 合肥联宝信息技术有限公司 | Isolated island formula power generation keyboard and electronic equipment thereof |
| CN104769528A (en) * | 2012-08-06 | 2015-07-08 | 辛纳普蒂克斯公司 | Touchsurface assemblies with linkages |
| US20160055990A1 (en) * | 2013-04-19 | 2016-02-25 | Synaptics Incorporated | Retractable keyboard keys |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7705586B2 (en) | 2004-09-27 | 2010-04-27 | Nxp B.V. | Magnetic sensor for input devices |
| JP2013131040A (en) | 2011-12-21 | 2013-07-04 | Yamaha Corp | Input device |
| JP6347338B1 (en) * | 2017-03-13 | 2018-06-27 | Tdk株式会社 | Key input device |
-
2017
- 2017-03-13 JP JP2017046900A patent/JP6347338B1/en active Active
- 2017-11-23 DE DE102017127705.6A patent/DE102017127705A1/en active Pending
- 2017-11-28 US US15/823,689 patent/US10135441B2/en active Active
- 2017-12-04 CN CN201711261103.3A patent/CN108572738B/en active Active
-
2018
- 2018-10-15 US US16/160,046 patent/US10396786B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211991A (en) * | 1977-05-25 | 1980-07-08 | Regie Nationale Des Usines Renault | Magnet-controlled switch |
| JP2010257638A (en) * | 2009-04-22 | 2010-11-11 | Alps Electric Co Ltd | Switch device |
| CN103578829A (en) * | 2012-07-26 | 2014-02-12 | 阿尔卑斯电气株式会社 | Key input device |
| CN104769528A (en) * | 2012-08-06 | 2015-07-08 | 辛纳普蒂克斯公司 | Touchsurface assemblies with linkages |
| US20160055990A1 (en) * | 2013-04-19 | 2016-02-25 | Synaptics Incorporated | Retractable keyboard keys |
| CN105431796A (en) * | 2013-04-19 | 2016-03-23 | 辛纳普蒂克斯公司 | Retractable keyboard keys |
| CN204167161U (en) * | 2014-08-26 | 2015-02-18 | 合肥联宝信息技术有限公司 | Isolated island formula power generation keyboard and electronic equipment thereof |
| CN104316594A (en) * | 2014-11-16 | 2015-01-28 | 吉林大学 | Electromagnetic nondestructive testing device for defects of steel |
Non-Patent Citations (1)
| Title |
|---|
| HEBA ABDELNASSER 等: ""MagBoard: Magnetic-Based Ubiquitous Homomorphic Off-the-Shelf Keyboard"", 《IEEE INTERNATIONAL CONFERENCE ON SECON》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018152211A (en) | 2018-09-27 |
| US20180262194A1 (en) | 2018-09-13 |
| US10135441B2 (en) | 2018-11-20 |
| JP6347338B1 (en) | 2018-06-27 |
| DE102017127705A1 (en) | 2018-09-13 |
| CN108572738B (en) | 2021-05-04 |
| US20190052267A1 (en) | 2019-02-14 |
| US10396786B2 (en) | 2019-08-27 |
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