CN108565673B - 用于半导体激光器的bar条集成 - Google Patents
用于半导体激光器的bar条集成 Download PDFInfo
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- CN108565673B CN108565673B CN201810279723.8A CN201810279723A CN108565673B CN 108565673 B CN108565673 B CN 108565673B CN 201810279723 A CN201810279723 A CN 201810279723A CN 108565673 B CN108565673 B CN 108565673B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
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CN201810279723.8A CN108565673B (zh) | 2018-04-01 | 2018-04-01 | 用于半导体激光器的bar条集成 |
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CN201810279723.8A CN108565673B (zh) | 2018-04-01 | 2018-04-01 | 用于半导体激光器的bar条集成 |
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CN108565673A CN108565673A (zh) | 2018-09-21 |
CN108565673B true CN108565673B (zh) | 2020-02-28 |
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CN201810279723.8A Active CN108565673B (zh) | 2018-04-01 | 2018-04-01 | 用于半导体激光器的bar条集成 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106025790A (zh) * | 2016-06-30 | 2016-10-12 | 西安立芯光电科技有限公司 | 一种半导体激光器腔面镀膜夹具装配结构及其装配方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6700709B1 (en) * | 2002-03-01 | 2004-03-02 | Boston Laser Inc. | Configuration of and method for optical beam shaping of diode laser bars |
CN102692711A (zh) * | 2011-03-21 | 2012-09-26 | 深圳市众望达光电有限公司 | 一种光斑匀化处理的激光照明器 |
CN102298215B (zh) * | 2011-09-15 | 2013-06-12 | 深圳市佶达德科技有限公司 | 一种激光补光的匀化方法及其激光照明装置 |
CN102522695A (zh) * | 2011-12-23 | 2012-06-27 | 天津大学 | 纳米银焊膏封装60瓦 808纳米大功率半导体激光器模块及其封装方法 |
CN103268016B (zh) * | 2013-05-31 | 2016-05-04 | 西安炬光科技有限公司 | 一种光纤耦合半导体激光器匀化方法及装置 |
CN205251682U (zh) * | 2015-11-11 | 2016-05-25 | 西安炬光科技股份有限公司 | 一种用于激光脱毛的高功率半导体激光器系统 |
CN106941240B (zh) * | 2017-05-18 | 2023-07-21 | 温州泛波激光有限公司 | 半导体激光器 |
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2018
- 2018-04-01 CN CN201810279723.8A patent/CN108565673B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106025790A (zh) * | 2016-06-30 | 2016-10-12 | 西安立芯光电科技有限公司 | 一种半导体激光器腔面镀膜夹具装配结构及其装配方法 |
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Effective date of registration: 20200120 Address after: 701, 801, building C3, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen fast communication technology Co., Ltd. Address before: 550000 Development and Design Department of Honggui Laser New Technology Development Co., Ltd. No. 43 South Section of Xintian Avenue, Guiyang City, Guizhou Province Applicant before: Er de Ni bilge |
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Effective date of registration: 20200228 Address after: 701, 801, building C3, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Co-patentee after: Jiangxi Xun Communication Technology Co., Ltd. Patentee after: Shenzhen fast communication technology Co., Ltd. Address before: 701, 801, building C3, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen fast communication technology Co., Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee after: Shenzhen Xunte Communication Technology Co.,Ltd. Patentee after: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: SHENZHEN SONT TECHNOLOGY Co.,Ltd. Patentee before: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |