CN108551714A - High-frequency signal control circuit and X-ray machine for X-ray emitter - Google Patents
High-frequency signal control circuit and X-ray machine for X-ray emitter Download PDFInfo
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- CN108551714A CN108551714A CN201810416027.7A CN201810416027A CN108551714A CN 108551714 A CN108551714 A CN 108551714A CN 201810416027 A CN201810416027 A CN 201810416027A CN 108551714 A CN108551714 A CN 108551714A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/08—Electrical details
- H05G1/26—Measuring, controlling or protecting
- H05G1/30—Controlling
Abstract
The present invention discloses a kind of high-frequency signal control circuit and X-ray machine for X-ray emitter, and high frequency signal control circuit includes：Frequency amplifying circuit, the frequency of the resonance current for amplifying input；Triangular signal generative circuit, at least generating triangular signal based on the resonance current after being amplified by the frequency amplifying circuit；Drive signal generation circuit, for based on after being amplified by the frequency amplifying circuit resonance current and the triangular signal generate the first drive signal and the second drive signal；Inversion drive signal generation circuit, for generating inversion drive signal based on first drive signal and the second drive signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.The inverter signal that higher frequency is capable of providing for the high-frequency signal control circuit and X-ray machine of X-ray emitter through the invention can be used in the quality for promoting existing Medical Devices to ensure that the quality of X-ray.
Description
Technical field
The present invention relates to electronic circuit technology field more particularly to a kind of high-frequency signal controls for X-ray emitter
Circuit and X-ray machine.
Background technology
Currently, domestic traditional its high frequency section of high pressure generator is all the IGBT control technologies used, using this skill
The reverse frequency of art only has 20KHZ or so, and the continuous popularization applied in Medical Devices with high pressure generator, especially exists
(the too low quality that can influence X-ray of reverse frequency, actually required inverse in X-ray machine for the continuous improvement of the demand of application in X-ray machine
Frequency is even as high as 400KHZ), the reverse frequency of the 20KH provided in the prior art cannot meet existing requirement
.Therefore, urgent need is a kind of being capable of providing the control circuit of higher reverse frequency, and ensures that the circuit continual and steady can carry
For required higher reverse frequency.
Invention content
The embodiment of the present invention provides a kind of high-frequency signal control circuit and X-ray machine for X-ray emitter, at least
Solve one of above-mentioned technical problem.
On the one hand, the present invention provides a kind of high-frequency signal control circuit for X-ray emitter, including：
Frequency amplifying circuit, the frequency of the resonance current for amplifying input；
Triangular signal generative circuit, at least being given birth to based on the resonance current after being amplified by the frequency amplifying circuit
At triangular signal；
Drive signal generation circuit, for based on the resonance current and described three after being amplified by the frequency amplifying circuit
Angle wave signal generates the first drive signal and the second drive signal；
Inversion drive signal generation circuit drives for generating inversion based on first drive signal and the second drive signal
Dynamic signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.
In some embodiments, high-frequency signal control circuit further includes：
Feedback of voltage and current control circuit, for voltage signal and electric current based on the metal-oxide-semiconductor inversion plate detected
Signal generates feedback control signal, and is sent to the triangular signal generative circuit；
It is described at least to include based on the resonance current generation triangular signal after being amplified by the frequency amplifying circuit：
Based on the resonance current and feedback control signal generation triangular wave after being amplified by the frequency amplifying circuit
Signal.
In some embodiments, high-frequency signal control circuit further includes：
Voltage detecting circuit, voltage signal for detecting the metal-oxide-semiconductor inversion plate and to be transmitted to the voltage and current anti-
Present control circuit；
Voltage protection circuit is used for voltage signal and voltage reference value detected by the voltage detecting circuit,
And voltage comparison result is sent to error information and stores reset circuit；
Error information stores reset circuit, for receiving and storing the voltage comparison result, and works as the voltage ratio
Compared with the result shows that when electric voltage exception generate reset signal, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further includes：
Current detection circuit, current signal for detecting the metal-oxide-semiconductor inversion plate and to be transmitted to the voltage and current anti-
Present control circuit；
Current protecting circuit is used for the current signal detected by the current detection circuit and current reference value,
And electric current comparison result is sent to error information and stores reset circuit；
The error information storage reset circuit is additionally operable to receive and store the electric current comparison result, and works as the electricity
Stream comparison result shows to generate reset signal when current anomaly, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further includes：
Resonance current feedback circuit carries out rectification to obtain conversion electricity for the resonance current to the metal-oxide-semiconductor inversion plate
Pressure, and it is transmitted to the feedback of voltage and current control circuit；
Resonance current protects circuit, for the conversion voltage with reference to resonance potential, and by resonance comparison result
It is sent to error information storage reset circuit；
Error information storage reset circuit, which is additionally operable to receive and store the resonance, to be compared as a result, and when described humorous
The comparison result that shakes shows to generate reset signal when resonance current exception, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further includes：
Inverter current feedback circuit compares institute for converting the inverter current of the metal-oxide-semiconductor inversion plate to inverter voltage
It states inverter voltage and refers to inverter voltage, and inversion comparison result is sent to the error information and stores reset circuit；
The error information storage reset circuit is additionally operable to receive and store the inversion comparison result, and when described inverse
Change is compared the result shows that when inverter current exception generates reset signal, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further includes：
Inversion plate temperature protects circuit, for being temperature telecommunications by the temperature inversion of the metal-oxide-semiconductor inversion plate detected
Number, and it is sent to the error information storage reset circuit；
The error information storage reset circuit is additionally operable to receive and store the temperature signal, and works as the temperature
Electric signal shows to generate reset signal when temperature anomaly, to reset the control circuit.
In some embodiments, metal-oxide-semiconductor inversion plate described in high-frequency signal control circuit is constituted using metal-oxide-semiconductor.
On the other hand, the present invention also provides a kind of X-ray machines comprising the height described in any one of the above embodiment of the present invention
Frequency signal control circuit.
The beneficial effects of the present invention are the high-frequency signal control circuits and X for X-ray emitter through the invention
Ray machine is capable of providing the inverter signal of higher frequency, to ensure that the quality of X-ray, can be used in promoting existing Medical Devices
Quality.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the functional block diagram of an embodiment of the high-frequency signal control circuit for X-ray emitter of the present invention；
Fig. 2 is the circuit theory of one embodiment of the high-frequency signal control circuit for X-ray emitter of the present invention
Figure；
Fig. 3 is the circuit diagram of an embodiment of the inversion drive signal generation circuit in the present invention；
Fig. 4 is the functional block diagram of one embodiment of the high-frequency signal control circuit for X-ray emitter of the present invention；
Fig. 5 is sampling and the protection circuit diagram of the KV feedback signals of the embodiment of the present invention；
Fig. 6 is detection and the protection circuit diagram of the MA feedback signals of the embodiment of the present invention；
Fig. 7 is the resonance current feedback of the embodiment of the present invention and the schematic diagram of the excessively high protection circuit of resonance current；
Fig. 8 is the inverter current current foldback circuit schematic diagram of the embodiment of the present invention；
Fig. 9 is the overheating protection circuit schematic diagram of the inversion plate MOSFET of the embodiment of the present invention；
Figure 10 A and Figure 10 B are that the error information in the embodiment of the present invention stores reset circuit schematic diagram.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise", include not only those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or equipment institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence " including ... ", it is not excluded that wanted including described
There is also other identical elements in the process, method, article or equipment of element.
The high-frequency signal control circuit of the present invention is particularly suitable for X-ray emitter, but is not limited to X-ray emitter,
For driving metal-oxide-semiconductor inversion plate to generate high-frequency signal, as shown in Figure 1, for the high-frequency signal for X-ray emitter of the present invention
The functional block diagram of one embodiment of control circuit is used for the high-frequency signal control circuit of X-ray emitter, packet in the embodiment
It includes：
Frequency amplifying circuit 11, the frequency of the resonance current for amplifying input；
Triangular signal generative circuit 12, at least based on the resonance electricity after being amplified by the frequency amplifying circuit 11
Stream generates triangular signal；
Drive signal generation circuit 13, for based on by the frequency amplifying circuit 11 amplify after resonance current and institute
It states triangular signal and generates the first drive signal and the second drive signal；
Inversion drive signal generation circuit 14, for generating inversion based on first drive signal and the second drive signal
Drive signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.
Inversion plate is one piece of wiring board, and if there is complete original paper can complete the function of inversion, but it does not include outside
Other accessories such as shell；Inversion plate includes inverter, and inverter is a complete product, and buying can use, and not need
Any processing is done again.Inverter is that direct current energy (battery, battery) is transformed into alternating current (generally 220V, 50Hz sine
Wave), it is made of inverter bridge, control logic and filter circuit.
The high-frequency signal control circuit that the embodiment of the present invention provides can drive inversion plate to generate high-frequency signal, inversion plate
The reverse frequency of output is up to 400KH, while also meeting quality requirement of the X-ray emitter to high-frequency signal.The present invention is real
It applies example and two-way drive signal is generated using triangular signal generative circuit, enabled output is driven to control with resonance current, one
Denier resonance current overshoots, and driving enable signal will end, and play a protective role；In the premise for considering machine space and size
Under, it is necessary to two-way drive signal comes while two blocks of inversion plates being driven to generate sufficiently large power；；The embodiment of the present invention uses
MOSFET pipe inverters, input impedance is high, and switching frequency is high, ensure that we generate the hardware circuit of high-frequency signal.
As shown in Fig. 2, the electricity of one embodiment for the high-frequency signal control circuit for X-ray emitter of the present invention
Road schematic diagram generates high-frequency driving signal to drive metal-oxide-semiconductor (that is, inversion plate) by the design circuit.Wherein, frequency amplification electricity
Road 11 includes current transformer T1, inductance (L1, L2 and L11), resistance R122, resistance R123, amplifier U17, amplifier U18 and three
NAND gate (U20A, U20B, U20C)；Triangular signal generative circuit 12 includes triode Q2, capacitance C52, capacitance C53, amplifier
U19；Drive signal generation circuit 13 includes d type flip flop U22A, NAND gate (U21A, U21B) and driving chip (U23) UC3709；
TP23-TP27 and TP30 and TP31 is signal acquisition point；Specifically,
Resonance current by current transformer T1 sampling, the secondary side of current transformer T1 be connected to inductance (L1, L2,
L11) and the series circuit of resistance (R122, R123), according to the difference of resonance current frequency, the voltage at inductance and resistance both ends is just
There are phase difference, the frequency of resonance current is bigger, and the advanced resistive voltage of voltage at inductance both ends is more, amplifier U17 and amplifier U18
For the zero-crossing comparator of high speed, high or low level is obtained in its output end.Three NAND gates are passed through in two amplifier outputs
(U20A, U20B and U20C) 74LS132 obtains the drive signal of 2 times of resonance current frequencies, what is exported in NAND gate U20B
Under the action of drive signal, the break-make of control high speed triode Q2, and then the charge and discharge of capacitance C52 and C53 are controlled, generate frequency
The triangular signal of modulation is compared, high ratio by the output signal VSET of high-speed comparator U19 and feedback control system
Clock signal of the output signal as d type flip flop U22A compared with device U19, and the reversed-phase output phase of the D input terminals of U22A and U18
Even, two output signals of U22A are exported with driving enable signal DRIVEEN by two NAND gate U21A and U21B controls, then
It exports to obtain control signal DRIVE1, DRIVE2 of driving circuit by driving chip (U23) UC3709.
The embodiment of the present invention generates two-way drive signal using triangular signal generative circuit, is driven with resonance current to control
Enabled output is moved, once resonance current overshoots, driving enable signal will end, and U21 level changes, and U23 no longer exports drive
Dynamic signal, plays a protective role；Generate sufficiently large power (50KW), it is necessary to which two blocks of inversion plates are completed.With regard to needing two
Road drive signal comes while driving two blocks of inversion plates；Considering machine space and under the premise of size, this is best scheme.This
Invention uses MOSFET pipe inverters, and input impedance is high, and switching frequency is high, ensure that we generate the hardware electricity of high-frequency signal
Road, and can be with real-time guard inverter circuit.
As shown in figure 3, the circuit diagram of the embodiment for the inversion drive signal generation circuit 14 in the present invention, packet
Include resistance R117-R120, resistance R136-R139, diode V25-28, diode V33-V36, P-channel power metal-oxide
(semiconductor) field-effect transistor (IRF9540) Q3, Q5, Q7, Q9 and field-effect tube (IRF530N) Q4, Q6, Q8, Q10, electricity
Hold C65 and C66；TP32-TP34 and TP28 is signal acquisition point.Specifically, by control signal DRIVE1, DRIVE2 go control by
The driving circuit that IRF530N and IRF9540 is constituted, and then obtain the original drive signal of control inversion plate.
As shown in figure 4, the original of one embodiment for the high-frequency signal control circuit for X-ray emitter of the present invention
Block diagram is managed, which includes：Frequency amplifying circuit 11, triangular signal generative circuit 12 drive
Dynamic signal generating circuit 13, inversion drive signal generation circuit 14, the feedback control circuit 2 being connect with frequency amplifying circuit 11,
The voltage detecting circuit 31 and inverter current feedback circuit 51 being connect respectively with the feedback control circuit, with the voltage detecting
The voltage protection circuit 32 that circuit 31 connects and the resonance current protection circuit 52 being connect with inverter current feedback circuit 51,
In, feedback control circuit 2 is connect by CPU with frequency amplifying circuit 11, and voltage detecting circuit 31 is used to detect the electricity of inversion plate
Pressure signal is simultaneously sent to CPU by feedback control circuit 2, what voltage protection circuit 32 was used to be detected voltage detecting circuit 31
Comparison result is relatively sent to error information later with setting reference voltage level and stores reset circuit 8, resonance electricity by voltage signal
Current feedback circuit 51 is used to detect the resonance current of inversion plate and feeds back to CPU, resonance current protection by feedback control circuit
Circuit 52 is used to convert the resonance current that resonance current feedback circuit 51 is detected to corresponding voltage signal, and joins with setting
Comparison result is fed back into error information after examining voltage value relatively and stores reset circuit 8；
High-frequency signal control circuit further includes；
Current detection circuit 41, current protecting circuit 42, inverter current feedback circuit 6 and inversion plate temperature protect circuit 7；
Wherein, current detection circuit 41 is used to detect the current value of inversion plate, and current protecting circuit 42 is used for current detection circuit 41
Detected current value is converted into corresponding voltage value, and is compared with setting reference voltage level, then by comparison result
Feed back to error information storage reset circuit 8；Inverter current feedback circuit 6 is used to detect the inverter current of inversion plate and by its turn
Corresponding voltage signal is turned to, is then compared operation with preset voltage reference value, operation result is fed back into report
Wrong information storage reset circuit 8；The temperature that inversion plate temperature protection circuit 7 is used to implement to monitor inversion plate, and when monitoring knot
When fruit shows that inversion plate temperature is higher than set temperature threshold value, generates error information and feed back to error information storage reset circuit 8；
Error information storage reset circuit 8, which is used to store the error information that each detection circuit is fed back and controls inversion plate, to be resetted,
To realize that the protection to inversion plate controls.
As shown in figure 5, the sampling for the KV feedback signals of the embodiment of the present invention and protection circuit diagram comprising, electricity
Press detection circuit 31 and voltage protection circuit 32, wherein voltage detecting circuit includes at least resistance R1-R8, resistance R16, R19,
R21, R22, R24, R25, R27, capacitance C171, C172, C1-C3, C9, op-amp U1A, U1B and U2B, diode V1-V3
And V6；Voltage protection circuit 32 includes resistance R9-R15, R28, R29, R32-R36, capacitance C6, C6, C15-C17, diode
IC1, op-amp U2A and U3, wire jumper JP1 and JP2；TP1, TP 2, TP 4, TP 5, TP 7 and TP 8 are signal acquisition point.
Specifically, the circuit design drawing originally implemented is related to KV feedbacks, negative KV feedbacks, the sampling of KV settings and operation and protection part：
The real-time sampling of positive KV, negative KV are realized by the circuit of design, and sampled signal is carried out by amplifier and KV setting signals
Operation to reach real time monitoring KV values, and is protected overvoltage.
KV+, KV- feedback signal inputted from high voltage output module (high voltage output module of inversion plate) is by capacitance-resistance point
What the mode of pressure obtained.The input terminal of circuit is the voltage feedback signal taken out from the anode and cathode of pressure-oil tank, and upper end is cathode
The voltage feedback signal of taking-up, lower end are the voltage feedback signals that anode takes out, and first pass around a filter circuit, then pass through again
It crosses a medical amplifying circuit and finally passes through a follower (U2B), the feedback voltage of output is that 1V corresponds to 20KV, as voltage
The feedback input signal of feedback element error amplifier；The protection circuit of KV is detected using the comparator of LM311 compositions,
Protect reference voltage it is optional by two ways, one is use fixed reference voltage, another kind be by CPU through digital-to-analogue conversion and
The KV deviation Reference signal KV_SET come select one way in which using wire jumper JP1.Wherein, the output of operational amplifier U2B
Signal KVFBK is exported to feedback control circuit 2, and the output signal KVOVER of operational amplifier U3 is exported to error information storage again
Position circuit 8.
In the embodiment of the present invention, the effect of wire jumper JP2:When jumper connection 1,2, maximum output voltage is 150KV；When jumper connection 2,3
When maximum output voltage be 125KV；For realizing the switching of different output voltages, to meet different practical application requests.Fortune
The effect for calculating amplifier U2A is exactly on the one hand quick tracking sampling exports sampled voltage KV_FD to microcontroller (CPU), another party
Face is output to test point TP7, can pass through oscillograph tested K V_FD voltage waveforms.KV_FD signals are exactly the sampled voltage of KV.
Can be with external oscillograph test waveform, to realize constantly showing for collection voltages waveform by this partial circuit, it in addition will letter
It number is output to microcontroller and carries out further operation.
As shown in fig. 6, the detection for the MA feedback signals of the embodiment of the present invention and protection circuit diagram.Including：Resistance
(R17, R 18, R 20, R 23, R 26, R 30, R 31, R 37-R 69), capacitance (C7, C 8, C 10-C 12, C 18-C
35), diode (V4, V 5, V 7-V 15), rheostat RW2-RW5, op-amp U4A, U4B, U5-U8.
Circuit design in the present embodiment is related to positive MA feedbacks, the sampling of negative MA feedbacks, operation and protection part, by setting
The circuit of meter realizes the real-time sampling of positive MA, negative MA, and sampled signal is carried out operation by amplifier and MA setting signals, from
And reach real time monitoring MA values, and overcurrent situations are protected.
Inputted from pressure-oil tank MA+, MA- feedback signal is filtered, diode clamp, through amplifier adjusts times magnification again
After number, the photography MA feedback signals and perspective MA feedback signals of standard are obtained.The proportionate relationship of MA feedback signals and MA values is 1V：
100MA, this proportionate relationship can be changed by adjusting RW4.The protection circuit of positive and negative MA is the comparator that is formed using LM311 to examine
It surveys.There are two types of the datums of protection, and mode is optional, and one is the mode with electric resistance partial pressure, another kind is turned through digital-to-analogue by CPU
The MA deviation Reference signal MA_SET changed select one way in which using wire jumper JP3.The output of operational amplifier U5 is believed
The output signal MA-OVER of number MA+OVER and operational amplifier U6 is exported to error information and is stored reset circuit 8.
It is mainly to track the sampling feedback of fluoroscopy current and can be measured by TP13, TP14 that U7, which forms circuit,；Output is adopted
Sample signal is further calculated to microcontroller；U8 forms the sampling feedback of circuit tracing photography tube current and can by TP12, TP16
To measure；Output sampled signal is further calculated to microcontroller.FMA_FAD and RMA_FAD has respectively represented the perspective after sampling
Photography tube current digital quantity after current digital quantity and sampling, the two signals are directly output to single chip circuit, microcontroller meeting
It is adjusted exposure real output value according to the two values.
As shown in fig. 7, the schematic diagram of the excessively high protection circuit of resonance current feedback and resonance current for the embodiment of the present invention,
It includes current transformer T2, capacitance C60, C61, C68, C69, C169 and C170, diode V29-V32, resistance R126-R130
And R133, rheostat RW8, comparator U25, signal output node CURRENT BACK are connected with feedback control circuit 2, compare
The signal CURRENT OVER that publish books of device U25 are connected with error information storage reset circuit 8.
This part corresponds to resonance current feedback, resonance overcurrent protection, and the circuit designed through this embodiment realizes resonance electricity
The sampling of stream, amplifier calculates and overcurrent protection.Pass through current transformer T2 (no-load voltage ratios 1：30) it, obtains with resonance current at just
The low current of ratio obtains and resonance current phase after diode V29, V30, D31, D32 full-bridge rectification on resistance R126
Corresponding voltage signal, the current feedback signal as current control link.
Important parameter when resonance current is inverter work, its size directly reflect the working condition of major loop,
If resonance current is excessive, the electric current for flowing through switching tube will be made to increase, on-state loss and switching loss increase, and jeopardize switching tube
Safety, when resonance current exceeds allowable range, stops the work of major loop so needing to be monitored it.This error detection
Circuit theory is comparatively fairly simple, and the resonance current in main circuit is transformed to low current by current transformer T2, passes through
One full bridge rectifier is converted into after voltage signal compared with the voltage of setting, if feedback voltage is greater than the set value, is compared
Device LM311 exports high level, the error signal output of generation.
As shown in figure 8, for the inverter current current foldback circuit schematic diagram of the embodiment of the present invention comprising current transformer
T3-T5, resistance R148-R153, R156-R162, R168-R171, capacitance C72-C74, C77, C78, C82, C86, C89, C92,
Diode V38, V41, V46, rheostat RW9 and comparator U11, U14, U15 (operational amplifier LM311).
This part corresponds to sampling, operation and the protection of inverter current feedback, and the circuit designed through the embodiment of the present invention is real
The real-time sampling of existing inverter current overcurrent, and sampled signal is subjected to operation by amplifier and setting signal, it is real to reach
When monitor inverter current value, and overcurrent situations are protected.And (output signal is deposited and is resetted in error signal progress
INV CURRENT OVER1, INV CURRENT OVER2, INV CURRENT OVER3, which export to error information to store, resets electricity
Road 8).
Current transformer on inversion plate is connected with one of energy storage filter capacitor, when inverter current is more than limit value
When, the protection signal of high level is generated, the work of major loop is stopped.The current signal to come from the sampling of inversion plate is mutual through overcurrent
Sensor T3 obtains voltage signal on resistance R148, using after rectifies compared with the voltage of setting, if instead
Feedthrough voltage is greater than the set value, and comparator LM311 exports high level, the error signal output of generation.
As shown in figure 9, the overheating protection circuit schematic diagram of the inversion plate MOSFET for the embodiment of the present invention, including luminous two
Pole pipe LD8, resistance R176 and R179, optocoupler E1, temperature switch S and shorting stub T.
This part corresponds to the protection of inversion plate temperature, and design temperature sensor through the embodiment of the present invention is to inversion plate temperature
It is excessively high to be protected.Temperature signal THSW is brought from inversion plate temperature detect switch (TDS) and passes through optocoupler E1, exports a temperature control protection letter
Number.When temperature has been more than the range allowed to inversion plate MOSFET in the process of work, temperature detect switch (TDS) disconnects, and TOVER becomes
High level (output to error signal stores reset circuit 8), cuts off the work of main inversion circuit, reaches the work of protection MOSFET
With.
As shown in Figure 10 A-10B, error information stores reset circuit schematic diagram comprising the storage of the first error information resets
Circuit (such as Figure 10 A) and the second error information storage reset circuit (such as Figure 10 B), wherein the storage of the first error information resets electricity
Road includes tri-state RS latched flip flop U16 (model CD4043), resistance R153-R155, light emitting diode LD1-LD3, reverse phase
Device U24A, U24B and U24C, diode V39, V40, V44, V45, capacitance C70 and C76；Second error information stores reset circuit
Including tri-state RS latched flip flop U12 (model CD4043), resistance R163-R167, R177 and R178, phase inverter U13A-
U13F, light emitting diode LD4-LD7, diode V42, V43, V49, V50, capacitance C83-C85.
The latch of fault message realizes that output terminates to reverser using tri-state RS latched flip flops CD4043
TC4584BP indicates corresponding fault message to drive LED, and convenient judgement and repair to phenomenon of the failure, CD4043's answers
It is realized by the way of RC electrification resets position.
SAM FAULT signals and/SAM FAULT signals are interrupt signal, when U11, U12 input terminal detect any one
Or when multiple signals will export SAM FAULT signals to Schmidt trigger U13E, it will after reaching trigger threshold value
Output/SAM FAULT signals, the signal are output to single chip circuit, and microcontroller will send out the code that reports an error, and terminate exposure,
Protect inversion circuit, fuel tank and bulb.
The embodiment of the present invention also provides a kind of X-ray machine comprising is used for X-ray described in any of the above-described embodiment of the present invention
The high-frequency signal control circuit of generator.
The apparatus embodiments described above are merely exemplary, wherein the unit illustrated as separating component can
It is physically separated with being or may not be, the component shown as unit may or may not be physics list
Member, you can be located at a place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of module achieve the purpose of the solution of this embodiment.
Finally it should be noted that：Above example is only to illustrate the technical solution of the application, rather than its limitations；Although
The application is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (8)
1. a kind of high-frequency signal control circuit for X-ray emitter, including：
Frequency amplifying circuit, the frequency of the resonance current for amplifying input；
Triangular signal generative circuit, at least generating three based on the resonance current after being amplified by the frequency amplifying circuit
Angle wave signal；
Drive signal generation circuit, for based on by the frequency amplifying circuit amplify after resonance current and the triangular wave
Signal generates the first drive signal and the second drive signal；
Inversion drive signal generation circuit, for generating inversion driving letter based on first drive signal and the second drive signal
Number, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.
2. control circuit according to claim 1, which is characterized in that further include：
Feedback of voltage and current control circuit, for voltage signal and current signal based on the metal-oxide-semiconductor inversion plate detected
Feedback control signal is generated, and is sent to the triangular signal generative circuit；
It is described at least to include based on the resonance current generation triangular signal after being amplified by the frequency amplifying circuit：
Based on the resonance current and feedback control signal generation triangular signal after being amplified by the frequency amplifying circuit.
3. control circuit according to claim 2, which is characterized in that further include：
Voltage detecting circuit, voltage signal for detecting the metal-oxide-semiconductor inversion plate are simultaneously transmitted to the feedback of voltage and current control
Circuit processed；
Voltage protection circuit, for the voltage signal and voltage reference value detected by the voltage detecting circuit, and will
Voltage comparison result is sent to error information storage reset circuit；
Error information stores reset circuit, for receiving and storing the voltage comparison result, and when the voltage compares knot
Fruit shows to generate reset signal when electric voltage exception, to reset the control circuit.
4. control circuit according to claim 3, which is characterized in that further include：
Current detection circuit, current signal for detecting the metal-oxide-semiconductor inversion plate are simultaneously transmitted to the feedback of voltage and current control
Circuit processed；
Current protecting circuit, for the current signal and current reference value detected by the current detection circuit, and will
Electric current comparison result is sent to error information storage reset circuit；
The error information storage reset circuit is additionally operable to receive and store the electric current comparison result, and works as the electric current ratio
Compared with the result shows that when current anomaly generate reset signal, to reset the control circuit.
5. control circuit according to claim 3, which is characterized in that further include：
Resonance current feedback circuit carries out rectification to obtain conversion voltage for the resonance current to the metal-oxide-semiconductor inversion plate, and
It is transmitted to the feedback of voltage and current control circuit；
Resonance current protects circuit, for the conversion voltage and refers to resonance potential, and resonance comparison result is sent
Reset circuit is stored to error information；
Error information storage reset circuit, which is additionally operable to receive and store the resonance, to be compared as a result, and working as the response ratio
Compared with the result shows that when resonance current exception generate reset signal, to reset the control circuit.
6. control circuit according to claim 3, which is characterized in that further include：
Inverter current feedback circuit, it is more described inverse for converting the inverter current of the metal-oxide-semiconductor inversion plate to inverter voltage
Time variant voltage is sent to the error information storage reset circuit with reference to inverter voltage, and by inversion comparison result；
The error information storage reset circuit is additionally operable to receive and store the inversion comparison result, and works as the inversion ratio
Compared with the result shows that when inverter current exception generate reset signal, to reset the control circuit.
7. control circuit according to claim 3, which is characterized in that further include：
Inversion plate temperature protects circuit, for being temperature signal by the temperature inversion of the metal-oxide-semiconductor inversion plate detected, and
It is sent to the error information storage reset circuit；
The error information storage reset circuit is additionally operable to receive and store the temperature signal, and works as the temperature telecommunications
Number show to generate reset signal when temperature anomaly, to reset the control circuit.
8. a kind of X-ray machine, which is characterized in that including claim 1-7 any one of them control circuits.
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Application publication date: 20180918 Assignee: Mingfeng Technology (Zhuhai) Co., Ltd Assignor: ZHUHAI RUIYING TECHNOLOGY Co.,Ltd. Contract record no.: X2021990000425 Denomination of invention: High frequency signal control circuit for X-ray generator and X-ray machine Granted publication date: 20190726 License type: Common License Record date: 20210720 |