CN108550424A - A kind of conductive film and the method for promoting conductive film electric conductivity - Google Patents
A kind of conductive film and the method for promoting conductive film electric conductivity Download PDFInfo
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- CN108550424A CN108550424A CN201810241317.2A CN201810241317A CN108550424A CN 108550424 A CN108550424 A CN 108550424A CN 201810241317 A CN201810241317 A CN 201810241317A CN 108550424 A CN108550424 A CN 108550424A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
Abstract
The invention discloses a kind of conductive films, coat the node of metal nano wire grid by using metal oxide sol so that the connection between metal nanometer line is closer, reduces the sheet resistance of conductive film；A kind of method of promotion conductive film electric conductivity of the present invention, is for the first time handled conductive film first with microwave, so that the node that junction resistance is big between metal nanometer line is welding together, is reduced the sheet resistance of conductive film；It is on the conductive film being coated with metal oxide sol after the microwave treatment for the second time, with substrate adhesive attraction occurs for metal oxide when annealing by conductive film, so that the place of the non-welding of metal nanometer line overlaps even closer, in addition metal oxide is also used as the electronics biography transport layer of conductive film, the larger place of junction resistance can transmit electronics by oxide semiconductor layer, to reduce conductive film sheet resistance, by handling the sheet resistance reduction so that conductive film twice, the electric conductivity of conductive film is improved.
Description
Technical field
The present invention relates to the preparation field of transparent conductive film, especially a kind of conductive film and promotion conductive film are led
Electrical method.
Background technology
Traditional transparent conductive film material is mainly tin indium oxide (I TO), but because itself there is flexible poor, cost
The scarce fillings such as high and preparation condition harshness, and it is increasingly rare to prepare the indium metal (I n) needed for I TO, can no longer meet in novel
The requirement of electronic device has most excellent photoelectricity so there is the transparent conductive film made of metal nanometer line
Characteristic, while splendid mechanical stability is shown, it is considered the next-generation transparent conductive film for being expected to substitute I TO.
Nano silver wire conductive film and discrete electric conductor, but it is logical by the conduction that the overlap joint between line and line is formed
Road constitutes conductive network, and contact area is very small between line and line and overlap joint is insecure, these will all reduce metal nanometer line
How the electric conductivity of film effectively links together metal nanometer line just into problem to be solved, patent
It proposes, using metal nanometer line in microwave treatment glass substrate, to can be applied to the efficient welding of large area in CN104766675A
Nano wire and not will produce by-product, but in microwave treatment flexible substrate metal nanometer line exist it is apparent insufficient because microwave has
Selective, the big node of the preferential welding junction resistance of meeting needs to increase the microwave time to the node welding for keeping junction resistance small,
And the node that microwave overlong time can make junction resistance big generates more heat transfer, flexible substrate temperature distortion is easy to cause, in order to protect
Card film needed without deforming control microwave time and microwave power, therefore the node for causing a large amount of resistance smaller without
Method welding or complete welding.
Invention content
To solve the above problems, the purpose of the present invention is to provide a kind of conductive film and promoting conductive film electric conductivity
Method metal nanometer line is embedded using metal oxide sol in microwave so that on the basis of junction resistance big node welding,
So that overlapped is even closer for non-welding or the incomplete node of welding in microwave process, to further decrease conductive film
Sheet resistance enhances electric conductivity.
Technical solution is used by the present invention solves the problems, such as it：
A kind of conductive film, including metal nanometer line, the metal nanometer line, which intersects, constitutes metal nano wire grid, also wraps
The metal oxide sol for compressing the crosspoint in metal nano wire grid is included, the metal nano wire grid includes by metal
The node that nanowire crossbars are formed, the metal oxide sol are coated on node surrounding.
Further, the metal nanometer line be nano silver wire, nanowires of gold, copper nano-wire, Pt nanowires, Fe nanowire,
Cobalt nanowire, nickel nano wire, tungsten nanowires, aluminium nano wire, titanium nano wire, antimony nano wire, Pb Nanowires, tin element, zinc nanometer
Line, indium nano wire, gallium nano wire or alloy nano-wire one of which.It is it with excellent light using the reason of metal nanometer line
Electrical characteristics.
Further, the metal oxide sol is zinc oxide colloidal sol, tin oxide sol, TiO 2 sol, three oxidations
Two Aluminum sols, zirconia sol, silicon dioxide gel or mixed-metal oxides colloidal sol one of which.Metal oxide sol can
So that non-welding or that overlapped is even closer without the complete node of welding after microwave treatment, can further decrease conduction
The sheet resistance of film improves electric conductivity.
A method of conductive film electric conductivity is promoted, is included the following steps：
Conductive film is put into microwave radiation reactor and carries out microwave treatment；
Metal oxide sol is applied on the conductive film after microwave treatment, is then placed on quiet on thermostatic platform
It sets.
Further, the preparation process of the conductive film is：Prepare metal nanometer line electrically conductive ink；Flexible substrate is carried out
Burin-in process；Flexible substrate electrically conductive ink being applied to after burin-in process is then placed on thermostatic platform and stands, is made and leads
Conductive film.
Further, the metal nanometer line on the conductive film, which intersects, constitutes 2 dimension networks or 3 dimension metal grill knots
Structure, the metal oxide sol are embedded in the node surrounding that metal nanometer line intersects to form.
Further, the metal oxide sol is zinc oxide colloidal sol, tin oxide sol, TiO 2 sol, three oxidations
Two Aluminum sols, zirconia sol, silicon dioxide gel or mixed-metal oxides colloidal sol one of which.
Further, by conductive film be put into microwave radiation reactor carry out microwave treatment the specific steps are：It will be conductive
Film is put into microwave radiation reactor, and it is 1mW~100W to make the microwave that 100Hz~3000MHz is full of in reaction chamber, power,
Processing time is 1ms~50s.Microwave can make the junction of the metal nanometer line on conductive film connect, to drop
The sheet resistance of low conductive film.
Further, the metal oxide sol of a concentration of 5~20mg/ml is taken to be applied to the conductive film after microwave treatment
On.
Further, the conductive film for being coated with metal oxide sol is placed on standing 10~120mi n on thermostatic platform, temperature
Degree is stablized at 10~80 DEG C.With flexible substrate adhesive attraction occurs for metal oxide sol when annealing by conductive film so that
The place of the non-welding of metal nanometer line overlaps even closer, to further decrease sheet resistance.
The beneficial effects of the invention are as follows：A kind of conductive film of the present invention, by the way that metal oxide sol is coated on gold
Belong to the node surrounding that nanowire crossbars are formed so that metal oxide sol can compress node, to reduce conductive film
Sheet resistance；
The method of a kind of promotion conductive film electric conductivity of the present invention, by handling the sheet resistance so that conductive film twice
It reduces, for the first time to be handled metal nanometer line using microwave, so that it is added hot linked process, processing for the first time can make
The big node of junction resistance is welding together between metal nanometer line, reduces the sheet resistance of conductive film；It is by microwave for the second time
Metal oxide colloidal sol on the conductive film of processing, metal oxide is adhered to substrate when annealing by conductive film
Effect so that the place of the non-welding of metal nanometer line overlaps even closer, and metal oxide is also used as conductive thin in addition
The electron transfer layer of film, the larger place of junction resistance can transmit electronics by oxide semiconductor layer, to reduce conductive thin
Membrane resistance improves the electric conductivity of conductive film by handling the sheet resistance reduction so that conductive film twice.
Description of the drawings
The invention will be further described with example below in conjunction with the accompanying drawings.
Fig. 1 is a kind of structural schematic diagram of conductive film of the present invention；
Fig. 2 is a kind of flow chart for the method promoting conductive film electric conductivity of the present invention；
Fig. 3 is the microgram of the nano silver wire flexible transparent conductive film before microwave；
Fig. 4 is the microgram of the nano silver wire flexible transparent conductive film after microwave in the embodiment of the present invention one；
Fig. 5 be prepared in the embodiment of the present invention two be compounded with zinc oxide colloidal sol nano silver wire flexible transparent conductive film
Microgram；
Fig. 6 is the test waveform figure of the embodiment of the present invention three；
Fig. 7 is the test waveform figure of the embodiment of the present invention four.
Specific implementation mode
Referring to Fig.1, a kind of conductive film of the invention, including metal nanometer line 1 and metal oxide sol 2, metal is received
Rice noodles 1 intersect to form metal nano wire grid, so multiple nodes can be formed in metal nano wire grid, and metal oxide
The effect of colloidal sol 2 is just coated on the surrounding of these nodes, and effect is to compress these nodes so that between metal nanometer line 1
What is connected is more close, to reduce the sheet resistance of conductive film.
Specifically, metal nanometer line 1 of the invention is nano silver wire, nanowires of gold, copper nano-wire, Pt nanowires, Tie Na
Rice noodles, cobalt nanowire, nickel nano wire, tungsten nanowires, aluminium nano wire, titanium nano wire, antimony nano wire, Pb Nanowires, tin element, zinc
Nano wire, indium nano wire, gallium nano wire or alloy nano-wire one of which, since metal nanometer line 1 has excellent photoelectricity special
Property, so the raw material that metal nanometer line 1 is prepared as conductive film is selected, and in above-mentioned metal nanometer line 1, nano silver wire
Photoelectric characteristic want excellent in other most metal nanometer lines 1, and nano silver wire material is more universal, and raw material is more,
It is most suitable for being used to prepare conductive film.
The present invention makes the sheet resistance of conductive film reduce by handling twice, improves electric conductivity, and processing for the first time is will
Conductive film is placed under microwave environment so that process that metal nanometer line 1 connects, in microwave processing process, junction resistance is big
Node can welding first, and conductive film deforms in order to prevent, and the microwave time is unable to process, and it is smaller which results in junction resistances
Node is not fused to or welding is incomplete, affects the electric conductivity of conductive film entirety, so the present invention is in order to solve
This problem is provided with second of processing procedure, will be on 2 applying conductive film of metal oxide sol so that metal oxide
Colloidal sol 2 embeds metal nanometer line 1, and with substrate adhesive attraction occurs for metal oxide when annealing by conductive film so that metal
The place of 1 non-welding of nano wire overlaps even closer, and metal oxide is also used as the electronics biography biography of conductive film in addition
Defeated layer, the larger place of junction resistance can transmit electronics by oxide semiconductor layer, to reduce conductive film sheet resistance, lead to
After processing twice so that the sheet resistance of conductive film reduces, the electric conductivity of conductive film is improved.
With reference to Fig. 2, a kind of method of promotion conductive film electric conductivity of the invention includes the following steps：
Conductive film is put into microwave radiation reactor and carries out microwave treatment, the specific steps are：Conductive film is put into
In microwave radiation reactor, it is 1mW~100W, processing time to make the microwave that 100Hz~3000MHz is full of in reaction chamber, power
For 1ms~50s, microwave can make the junction of metal nanometer line 1 connect, to reduce the sheet resistance of conductive film；
Metal oxide sol 2 is applied on the conductive film after microwave treatment, is then placed on quiet on thermostatic platform
It sets, the specific steps are：The conductive film metal oxide sol 2 of a concentration of 5~20mg/ml being applied to after microwave treatment
On, standing 10~120mi n on thermostatic platform are then placed on, temperature is stablized at 10~80 DEG C, and organic solvent is evaporated.
Preferably, the microwave frequency that a kind of method of promotion conductive film electric conductivity of the invention is chosen is 2450MHz, work(
Rate is 16~39W, processing time 15s.
Preferably, a kind of method of promotion conductive film electric conductivity of the invention chooses the concentration of metal oxide sol 2
For 20mg/ml.
Specifically, the preparation process of conductive film is：Prepare metal nanometer line electrically conductive ink；Aging is carried out to flexible substrate
Processing；Flexible substrate electrically conductive ink being applied to after burin-in process is then placed on thermostatic platform and stands, conductive thin is made
Film.
Metal nanometer line 1 on conductive film, which intersects, constitutes 2 dimension networks or 3 dimension metal mesh structures, metal oxidation
Object colloidal sol 2 is embedded in the node surrounding that metal nanometer line 1 intersects to form, and can compress node so that metal nanometer line 1 can connect
What is connect is even closer.
Specifically, metal oxide sol 2 of the present invention is zinc oxide colloidal sol, tin oxide sol, titanium dioxide
Colloidal sol, alundum (Al2O3) colloidal sol, zirconia sol, silicon dioxide gel or mixed-metal oxides colloidal sol one of which.
Preferably, the present invention selects zinc oxide colloidal sol.
Specifically, due at 1 netted node of metal nanometer line during carrying out microwave treatment to conductive film
Amount of heat is generated, so needing to carry out shouldering high temperature ageing processing to flexible substrate, i.e., flexible substrate is put into 30 in constant temperature oven
~60mi n, constant temperature furnace temperature are set as 150~300 DEG C, make its shrink aging, improve its heat resistance so that can use microwave work(
Rate becomes more.
Specifically, flexible substrate of the invention is by makrolon (PC), polyethylene terephthalate (PET), poly- methyl
Methyl acrylate (PMMA), triacetate fiber (TCA) or polyimides (PI) one of which material are made, and above-mentioned material is
Flexible material, manufactured flexible substrate can improve the ductility of conductive film, expand its application range.
In order to verify the present invention in the reliability for reducing resistance, four tests have been carried out.Embodiment one is only to leading
Conductive film carries out microwave treatment；
Embodiment two is the combined processing only carried out to conductive film with metal oxide sol；
Embodiment three is first is carried out to conductive film and the combined processing of metal oxide sol, carries out microwave treatment afterwards；
Example IV is first to carry out microwave treatment, the rear combined processing carried out with metal oxide sol to conductive film；
The metal nanometer line 1 chosen in one~example IV of embodiment is nano silver wire, the flexible substrate material of selection
Metal oxide sol 2 for PET material, selection is zinc oxide colloidal sol, and specific implementation process is as follows
Embodiment one：The preparation of nano silver wire transparent conductive film and microwave treatment：
(1), by the nano silver wire solution and ethanol solution of concentration 10mg/mL according to 1:10 mass ratio mixing, wherein silver
Nano wire average diameter is 35nm, length 10um；
(2), the suspension of gained is mixed 10 minutes on eddy blending machine, to obtain finely dispersed suspension,
Then the suspension is coated to 1200 revs/min of rotating speed in the PET flexible substrates after burin-in process, by PET flexible liners
Bottom is transferred quickly to dry solidification 2 minutes on 70 DEG C of hot plates, and nano silver wire transparent conductive film is made；
(3), test nano silver wire transparent conductive film obtained above 550 nano wave lengths light transmittance, with four probes
The sheet resistance values that method measures obtain one group of data, as shown in table 1；
(4) and then nano silver wire transparent conductive film is put into the sample stage in the reaction chamber in microwave radiation reactor
On, it opens electromagnetic wave and generates controller, it is 29~39w to make the microwave that 2450MHz is filled in reaction chamber, power, handles 15s,
Then its light transmittance and sheet resistance are tested, is obtained such as one group of data of the following table 1.
Table 1 (carries out conductive film the data table of comparisons before and after microwave treatment)：
It can be to effectively reducing the sheet resistance of conductive film after microwave treatment, but with microwave power by 1 data of table
Increase, resistance rate of descent is on a declining curve, and power is higher, and conductive film more easily deforms.
With reference to Fig. 3 and Fig. 4, the places A are the node of non-welding after microwave treatment in wherein Fig. 4, and the places B are molten after microwave treatment
The node connect, as can be seen from Figure, after microwaved, the part node welding on metal nanometer line 1 together, but
It is the node there are still non-welding.
Embodiment two：The preparation of nano silver wire transparent conductive film and metal oxide combined processing：
(1), by the nano silver wire solution and ethanol solution of concentration 10mg/mL according to 1:10 mass ratio mixing, wherein silver
Nano wire average diameter is 35nm, length 10um；
(2), the suspension of gained is mixed 10 minutes on eddy blending machine, to obtain finely dispersed suspension,
Then the suspension is coated to 1200 revs/min of rotating speed in the PET flexible substrates after burin-in process, by PET flexible liners
Bottom is transferred quickly to dry solidification 2 minutes on 70 DEG C of hot plates, and nano silver wire transparent conductive film is made；
(3), test nano silver wire transparent conductive film obtained above 550 nano wave lengths light transmittance, with four probes
The sheet resistance values that method measures obtain one group of data, as shown in table 2；
(4), the zinc acetate methanol solution of a concentration of 0.1mo l/L of 42mL is added dropwise to a concentration of 0.37mo of 23mL
In the potassium hydroxide methanol solution of l/L, then grows 2 hours under the conditions of 90 DEG C of oil bath, next mixed solution exists
It is centrifuged 15 minutes under 10000 revs/min, lower sediment thing is repeatedly washed into separation with methanol solution, is finally distributed in methanol
Form the zinc oxide methanol solution of 20mg/mL；
(5), the nano silver wire that the zinc oxide methanol solution of a concentration of 20mg/mL is added drop-wise to step (2) preparation transparent is led
Then all samples are placed on Thermostatic platform with 40 DEG C of Temperature Treatment 30 minutes, obtain nano silver wire-by the surface of conductive film
Zinc oxide type compound transparent conductive film, last sample obtain such as one group of data of the following table 2 the light transmittance and sheet resistance of sample.
Table 2 (carries out the compound front and back data table of comparisons of metal oxide) to conductive film：
It can be obtained by 2 data of table, after composite zinc oxide colloidal sol, the resistance of conductive film is greatly reduced, the conduction of conductive film
Property is greatly enhanced.
Referring to Figure 5, after being compounded with zinc oxide colloidal sol, zinc oxide colloidal sol embeds metal nanometer line 1, makes metal nano
The connection even closer during annealing of line 1, improves the electric conductivity of conductive film.
Embodiment 3：(preparation of nano silver wire transparent conductive film, to the advanced compound place of row metal oxide of conductive film
Microwave treatment is carried out after reason)
(1), by the nano silver wire solution and ethanol solution of concentration 10mg/mL according to 1:10 mass ratio mixing, wherein silver
Nano wire average diameter is 35nm, length 10um；
(2), the suspension of gained is mixed 10 minutes on eddy blending machine, to obtain finely dispersed suspension,
Then the suspension is coated to 1200 revs/min of rotating speed in the PET flexible substrates after burin-in process, by PET flexible liners
Bottom is transferred quickly to dry solidification 2 minutes on 70 DEG C of hot plates, and nano silver wire transparent conductive film is made；
(3), test nano silver wire transparent conductive film obtained above 550 nano wave lengths light transmittance, with four probes
The sheet resistance values that method measures obtain one group of data, as shown in table 3；
(4), the zinc acetate methanol solution of a concentration of 0.1mo l/L of 42mL is added dropwise to a concentration of 0.37mo of 23mL
In the potassium hydroxide methanol solution of l/L, then grows 2 hours under the conditions of 90 DEG C of oil bath, next mixed solution exists
It is centrifuged 15 minutes under 10000 revs/min, lower sediment thing is repeatedly washed into separation with methanol solution, is finally distributed in methanol
Form the zinc oxide methanol solution of 20mg/mL；
(5), next the zinc oxide methanol solution of a concentration of 20mg/mL is added drop-wise to the nano silver wire of step (2) preparation
All samples are placed on Thermostatic platform with 40 DEG C of Temperature Treatment 30 minutes to get to silver nanoparticle by transparent conductive film surface
Line-zinc oxide type compound transparent conductive film, last sample obtain data in table 3 to the light transmittance and sheet resistance of sample.
(6), the sheet resistance and light transmittance of the nano silver wire transparent conductive film of test compound zinc oxide, at 550 nanometers
The light transmittance of wavelength, the sheet resistance values measured with four probe method obtain one group of data.
(7), the reaction being put into the nano silver wire transparent conductive film of above-mentioned composite zinc oxide in microwave radiation reactor
On the sample stage of intracavitary, opens electromagnetic wave and generate controller, make the microwave for being filled with 2450MHz in reaction chamber, power 16
~24w handles 15s, and then sample obtains data in table 3 to the light transmittance and sheet resistance of sample.
Table 3 (the data table of comparisons that microwave treatment is carried out after compound to the advanced row metal oxide of conductive film)：
It can be obtained with reference to Fig. 6 and 3 data of table, after advanced 2 combined processing of row metal oxide sol, the resistance of conductive film
Reduce very much, then after carrying out microwave treatment to conductive film, resistance rate of descent is not it is obvious that even in some microwaves
Under the action of power, resistance rises instead.
Embodiment 4：(preparation of nano silver wire transparent conductive film carries out gold after first carrying out microwave treatment to conductive film
Belong to oxide combined processing)：
(1), by the nano silver wire solution and ethanol solution of concentration 10mg/mL according to 1:10 mass ratio mixing, wherein silver
Nano wire average diameter is 35nm, length 10um；
(2), the suspension of gained is mixed 10 minutes on eddy blending machine, to obtain finely dispersed suspension,
Then the suspension is coated to 1200 revs/min of rotating speed in the PET flexible substrates after burin-in process, by PET flexible liners
Bottom is transferred quickly to dry solidification 2 minutes on 70 DEG C of hot plates, and nano silver wire transparent conductive film is made；
(3), test nano silver wire transparent conductive film obtained above 550 nano wave lengths light transmittance, with four probes
The sheet resistance values that method measures obtain one group of data, as shown in table 4；
(4) and then by nano silver wire transparent conductive film the sample being put into the reaction chamber in microwave radiation reactor carries
It on platform, opens electromagnetic wave and generates controller, it is 29~39w, processing to make the microwave for being filled with 2450MHz in reaction chamber, power
15s, the light transmittance and sheet resistance of test sample obtain one group of data, as shown in table 4.
(5), the zinc acetate methanol solution of a concentration of 0.1mo l/L of 42mL is added dropwise to a concentration of 0.37mo of 23mL
In the potassium hydroxide methanol solution of l/L, then grows 2 hours under the conditions of 90 DEG C of oil bath, next mixed solution exists
It is centrifuged 15 minutes under 10000 revs/min, lower sediment thing is repeatedly washed into separation with methanol solution, is finally distributed in methanol
Form the zinc oxide methanol solution of 20mg/mL；
(6), next the zinc oxide methanol solution of a concentration of 20mg/mL is added drop-wise to the nano silver wire of step (2) preparation
All samples are placed on Thermostatic platform with 40 DEG C of Temperature Treatment 30 minutes to get to silver nanoparticle by transparent conductive film surface
Line-zinc oxide type compound transparent conductive film, last test light transmittance and sheet resistance, obtains data in table 4.
Table 4 (first carries out conductive film the compound data table of comparisons of the laggard row metal oxide of microwave treatment)：
It can be obtained with reference to Fig. 7 and 4 data of table, first carry out microwave treatment, then composite zinc oxide colloidal sol can effectively reduce
The sheet resistance of conductive film improves electric conductivity.
To sum up the result shows that, microwave treatment nano silver wire transparent conductive film can effectively reduce sheet resistance, and resistance declines
Rate is up to 50%, and then resistance significantly declines again after compound ZnO, and total resistance rate of descent can reach 90%, i.e., of the invention
Method can be that the resistance of conductive film is greatly lowered, improve the electric conductivity of conductive film.
The method of the present invention can not only improve the electric conductivity of conductive film, can also improve the physical property of conductive film, gold
Belong to nano wire 1 and be soldered and form firm connection, enhances the adhesion strength of metal nanometer line 1 conductive network and substrate, it will not be because of
The performance that some deformation allows for flexible transparent conductive film changes.
The above, only presently preferred embodiments of the present invention, the invention is not limited in the above embodiments, as long as
It reaches the technique effect of the present invention with identical means, should all belong to the scope of protection of the present invention.
Claims (10)
1. a kind of conductive film, it is characterised in that：Including metal nanometer line (1), the metal nanometer line (1), which is intersected, constitutes metal
Nano wire grid, further includes the metal oxide sol (2) for compressing the crosspoint in metal nano wire grid, and the metal is received
Rice noodles grid includes the node intersected to form by metal nanometer line (1), and the metal oxide sol (2) is coated on node four
Week.
2. a kind of conductive film according to claim 1, it is characterised in that：The metal nanometer line (1) be nano silver wire,
Nanowires of gold, copper nano-wire, Pt nanowires, Fe nanowire, cobalt nanowire, nickel nano wire, tungsten nanowires, aluminium nano wire, titanium are received
Rice noodles, antimony nano wire, Pb Nanowires, tin element, zinc nano wire, indium nano wire, gallium nano wire or alloy nano-wire one of which.
3. a kind of conductive film according to claim 1, it is characterised in that：The metal oxide sol (2) is oxidation
Zinc colloidal sol, tin oxide sol, TiO 2 sol, alundum (Al2O3) colloidal sol, zirconia sol, silicon dioxide gel or mixing gold
Belong to oxide sol one of which.
4. a kind of method promoting conductive film electric conductivity, it is characterised in that：Include the following steps：Conductive film is put into microwave
Microwave treatment is carried out in radiation reactor；
Metal oxide sol (2) is applied on the conductive film after microwave treatment, is then placed on thermostatic platform and stands.
5. a kind of method promoting conductive film electric conductivity according to claim 4, it is characterised in that：The conductive film
Preparation process be：Prepare metal nanometer line electrically conductive ink；
Burin-in process is carried out to flexible substrate；Flexible substrate electrically conductive ink being applied to after burin-in process, is then placed on
It is stood on thermostatic platform, conductive film is made.
6. a kind of method promoting conductive film electric conductivity according to claim 5, it is characterised in that：The conductive film
On metal nanometer line (1) intersect and constitute 2 dimension networks or 3 dimension metal mesh structures, the metal oxide sol (2) packet
It is embedded in the node surrounding that metal nanometer line (1) intersects to form.
7. a kind of method promoting conductive film electric conductivity according to claim 4, it is characterised in that：The metal oxidation
Object colloidal sol (2) is zinc oxide colloidal sol, tin oxide sol, TiO 2 sol, alundum (Al2O3) colloidal sol, zirconia sol, dioxy
SiClx colloidal sol or mixed-metal oxides colloidal sol one of which.
8. a kind of method promoting conductive film electric conductivity according to claim 4, it is characterised in that：Conductive film is put
Enter in microwave radiation reactor carry out microwave treatment the specific steps are：Conductive film is put into microwave radiation reactor, is made
The microwave of 100Hz~3000MHz is full of in reaction chamber, power is 1mW~100W, and processing time is 1ms~50s.
9. a kind of method promoting conductive film electric conductivity according to claim 4, it is characterised in that：Take a concentration of 5~
The metal oxide sol (2) of 20mg/ml is applied on the conductive film after microwave treatment.
10. a kind of method promoting conductive film electric conductivity according to claim 4, it is characterised in that：Gold will be coated with
The conductive film for belonging to oxide sol (2) is placed on 10~120min of standing on thermostatic platform, and temperature is stablized at 10~80 DEG C.
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| CN109337530A (en) * | 2018-11-14 | 2019-02-15 | 安徽兆拓新能源科技有限公司 | A kind of solar panels conductive self-cleaning coating and preparation method thereof |
| CN111534154A (en) * | 2020-06-02 | 2020-08-14 | 浙江大学 | Silver nanowire-silica sol modified composite conductive ink and preparation method thereof |
| CN113707368A (en) * | 2021-09-06 | 2021-11-26 | 石家庄铁道大学 | High-temperature-resistant transparent flexible conductive material and preparation method thereof |
| CN113936844A (en) * | 2020-07-13 | 2022-01-14 | 华为技术有限公司 | Transparent conductive electrode, preparation method thereof and electronic device |
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| CN109337530A (en) * | 2018-11-14 | 2019-02-15 | 安徽兆拓新能源科技有限公司 | A kind of solar panels conductive self-cleaning coating and preparation method thereof |
| CN111534154A (en) * | 2020-06-02 | 2020-08-14 | 浙江大学 | Silver nanowire-silica sol modified composite conductive ink and preparation method thereof |
| CN113936844A (en) * | 2020-07-13 | 2022-01-14 | 华为技术有限公司 | Transparent conductive electrode, preparation method thereof and electronic device |
| CN113707368A (en) * | 2021-09-06 | 2021-11-26 | 石家庄铁道大学 | High-temperature-resistant transparent flexible conductive material and preparation method thereof |
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