CN108548977A - A kind of Zinc-oxide piezoresistor ageing state lossless detection method of the dielectric spectroscopy based on optimization - Google Patents
A kind of Zinc-oxide piezoresistor ageing state lossless detection method of the dielectric spectroscopy based on optimization Download PDFInfo
- Publication number
- CN108548977A CN108548977A CN201810570021.5A CN201810570021A CN108548977A CN 108548977 A CN108548977 A CN 108548977A CN 201810570021 A CN201810570021 A CN 201810570021A CN 108548977 A CN108548977 A CN 108548977A
- Authority
- CN
- China
- Prior art keywords
- zinc
- oxide piezoresistor
- state
- detection method
- ageing state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
Abstract
The present invention discloses a kind of Zinc-oxide piezoresistor ageing state lossless detection method of the dielectric spectroscopy based on optimization, including：1) set temperature interval measures the frequency domain response characteristic of Zinc-oxide piezoresistor capacitance C at high temperature；2) it calculates and drawsWith the relation spectrum of frequency f (angular frequency=2 π f)；3) it takes under different temperatures TExtreme frequencies f in spectrogramm, it is lnf to draw out ordinatem, abscissa is the spectrogram of 1000/T, and calculates its activation energy by linear fit, and activation energy corresponds to the interfacial state energy level of Zinc-oxide piezoresistor grain boundaries.The frequency domain response characteristic that the present invention passes through capacitance under measurement Zinc-oxide piezoresistor high temperature, using a kind of new characterizing method, interfacial state electron trap relaxation signals are extracted from DC conductance cover, and using interfacial state electron trap relaxation activation energy as the evaluation parameter of Zinc-oxide piezoresistor ageing state.The present invention is not damaged to test sample, is the effective means for assessing Zinc-oxide piezoresistor ageing state.
Description
Technical field
The invention belongs to electrical engineering voltage-sensitive ceramic field, more particularly to a kind of Zinc-oxide piezoresistor ageing state is lossless
Detection method.
Background technology
In engineer application, the aging of Zinc-oxide piezoresistor influences whether the reliability of operation power, stability.With
The further intensification of degree of aging, voltage-sensitive ceramic is possible to can be by heat or electrical breakdown, to bring weight to the operation of power equipment
Big security risk.Assessing the big test for mostly using voltage-current characteristic and nonlinear factor and letting out to ageing state at present
The parameters such as leakage current.But the reason of aging character that these parameters only show macroscopic view does not analyze aging from microcosmic angle.
The deterioration of electrical property is the drop due to the Schottky barrier of microcosmic upper crystal boundary in Zinc-oxide piezoresistor ageing process
It is low to cause, and depletion layer and negatively charged interfacial state that Schottky barrier is made of positively charged donor ion are constituted.
The negatively charged ion in interface is either neutralized to interfacial migration from depletion layer due to positively charged zinc interstitial ion
Or oxygen can show as the variation of interfacial state after aging in the desorption at interface.
The frequency domain response analysis of Zinc-oxide piezoresistor is concentrated in two relaxation processes of low temperature range.The two relax
The origin of Henan process is zinc calking and the Lacking oxygen of crystal boundary area depletion layer.But the interfacial state frequency domain response of Zinc-oxide piezoresistor is deposited
It is under conditions of at higher temperature or more low frequency, and DC conductance component is sharply increased in high temperature and low frequency response, often covers
Relaxation process therein, therefore the report of the rare high temperature relaxation process to Zinc-oxide piezoresistor.
Invention content
The purpose of the present invention is to provide a kind of Zinc-oxide piezoresistor ageing states of the dielectric spectroscopy based on optimization
Lossless detection method can be detected its ageing state from the microcosmic cause of Zinc-oxide piezoresistor aging.
To achieve the above objectives, present invention employs following technical schemes：
A kind of Zinc-oxide piezoresistor ageing state lossless detection method of the dielectric spectroscopy based on optimization, including it is following
Step：
1) set temperature interval measures the frequency domain response characteristic of Zinc-oxide piezoresistor capacitance C at high temperature；
2) it calculates and drawsWith the relation spectrum of frequency f；
3) it takes under different temperatures TExtreme frequencies f in spectrogramm, it is lnf to draw out ordinatem, horizontal seat
It is designated as the spectrogram of 1000/T, and its activation energy is calculated by linear fit, activation energy corresponds to Zinc-oxide piezoresistor grain boundaries
Interfacial state energy level.
Further, with the intensification of Zinc-oxide piezoresistor degree of aging, the activation of interfacial state electron trap relaxation
It can continuously decrease；The interfacial state energy order reaction Zinc-oxide piezoresistor that Zinc-oxide piezoresistor grain boundaries are obtained by step 3) is old
Change state.
Further, the temperature interval set in step 1) is 10 DEG C.
Further, high temperature described in step 1) refers to>120℃.
Further,With in the relation spectrum of frequency f, the π f of angular frequency=2.
Further,With in the relation spectrum of frequency f<103There are an extreme points under Hz frequencies.
Further, with the intensification of Zinc-oxide piezoresistor degree of aging, the activation of interfacial state electron trap relaxation
It can be gradually lowered to 0.89eV from 1.01eV.
Compared with the existing technology, the invention has the advantages that：The present invention passes through to electric in Zinc-oxide piezoresistor
The frequency domain response of appearance, which advanced optimizes, obtains the relaxation process of the capture of its interfacial state electron trap and launching electronics formation, and leads to
The degree of aging for crossing the relaxation activation energy size to assess Zinc-oxide piezoresistor.Any Zinc-oxide piezoresistor exists>120 DEG C of temperature
It can be existed by this method under degree<103An extreme point is observed under Hz frequencies, passes through the corresponding frequency of extreme point under different temperatures
The activation energy that rate is calculated is the activation energy of interfacial state electron trap relaxation.Its activation of not aged Zinc-oxide piezoresistor
Can be 1.01eV, with the intensification of degree of aging, activation energy is gradually lowered to 0.89eV.The interfacial state electron trap relaxation activates
The size of energy is to weigh a major criterion of Zinc-oxide piezoresistor ageing state.The invention is to assessing Zinc-oxide piezoresistor
Degree of aging have universality.
The present invention by measure Zinc-oxide piezoresistor high temperature under capacitance frequency domain response characteristic, using a kind of new characterization
Method extracts interfacial state electron trap relaxation signals from DC conductance cover, and by interfacial state electron trap relaxation
Evaluation parameter of the activation energy as Zinc-oxide piezoresistor ageing state.The present invention is easy to operate, flexibly and easily, to test sample
It is not damaged, it is the effective means for assessing Zinc-oxide piezoresistor ageing state.
Description of the drawings
Fig. 1 is different ageing step J-E curves；
Fig. 2 is nonlinear factor α and leakage current ILWith the variation of ageing time；
Fig. 3 is under unaged Zinc-oxide piezoresistor high temperatureRelationship with frequency f and high temperature low frequency interface
State relaxation activation energy is fitted and calculates view；
Fig. 4 is after direct current accelerated ageing 225 hours under Zinc-oxide piezoresistor high temperatureWith the relationship of frequency f
And high temperature low frequency interfacial state relaxation activation energy is fitted and calculates view；
Fig. 5 is variation relation view of the high temperature low frequency interfacial state relaxation activation energy with the direct current accelerated ageing time.
Specific implementation mode
The present invention provides a kind of Zinc-oxide piezoresistor ageing state non-destructive testing side of the dielectric spectroscopy based on optimization
Method includes the following steps：
1) with 10 DEG C for interval, measure Zinc-oxide piezoresistor high temperature (>120 DEG C) under capacitance C frequency domain response characteristic；
2) it calculates and drawsWith the relation spectrum of frequency f (angular frequency=2 π f), which exists<103Hz
There are an extreme points under frequency；
3) it takes under different temperatures TExtreme frequencies f in spectrogramm, it is lnf to draw out ordinatem, horizontal seat
It is designated as the spectrogram of 1000/T, and its activation energy, the interfacial state of corresponding Zinc-oxide piezoresistor grain boundaries are calculated by linear fit
Energy level；
4) with the intensification of degree of aging, the activation energy of the interfacial state electron trap relaxation continuously decreases；Pass through interfacial state
Energy level can reflect Zinc-oxide piezoresistor ageing state.
Embodiment 1：
Accelerated aging tests are carried out to Zinc-oxide piezoresistor, aging temperature is 135 DEG C, and DC voltage is that current density is
1mA/cm2When 0.8 times of varistor both end voltage, choose unaged, aging 9 hours, 36 hours, 81 hours, 150 hours,
Sample after 225 hours carries out frequency domain capacitance response test under voltage-current characteristic and high temperature (140~220 DEG C).
Fig. 1 is the voltage-to-current test result of the Zinc-oxide piezoresistor in different direct current accelerated ageing stages, electric potential gradient
E1mASubstantially it does not change.
Fig. 2 is the nonlinear factor α and leakage electricity of the different ageing steps obtained by voltage-to-current test result calculations
Flow IL, with the intensification of degree of aging, nonlinear factor is gradually reduced, and leakage current gradually increases.
Zinc-oxide piezoresistor high temperature after Fig. 3 and Fig. 4 is respectively unaged and direct current accelerated ageing 225 hours (140~
220 DEG C) underWith the relation spectrum of frequency f (angular frequency=2 π f), low frequency (<103Hz) there is interfacial state electronics
Trap relaxation process.Under different degree of agings, which is calculated by Arrhenius formula, and is summarized in
Table 1.
Table 1
| The direct current accelerated ageing time | Interfacial state electron trap relaxation activation energy/eV |
| It is unaged | 1.01 |
| Aging 8 hours | 0.97 |
| Aging 36 hours | 0.94 |
| Aging 81 hours | 0.92 |
| Aging 150 hours | 0.90 |
| Aging 225 hours | 0.89 |
As can be drawn from Table 1, interfacial state electron trap relaxation activation energy is continuously decreased with the intensification of degree of aging.Always
Either zinc interstitial ion neutralizes the anion at interface or the solution of interface oxygen from depletion layer to interfacial migration during changing
Absorption, what is ultimately caused is all the reduction of heterointerface state charge, and conduction band bottom is moved closer to so as to cause interfacial state energy level.The relaxation
The activation energy of process can be considered the microscopic sdIBM-2+2q.p.approach parameter of Zinc-oxide piezoresistor degree of aging, and due under high temperature/low frequency condition
DC conductance is significantly increased, and the relaxation process can not be characterized by dielectric loss/electricity modulus imaginary part/imaginary part of dielectric constant etc.,
And pass throughInfluence of the method removal DC conductance in frequency domain response can clearly symbolize the relaxation
Process.
Result, it is believed that by under high temperatureThe interfacial state electronics characterized with the relation spectrum of frequency is fallen into
The size of trap relaxation activation energy can reflect the depth of the degree of aging of Zinc-oxide piezoresistor.
Claims (7)
1. a kind of Zinc-oxide piezoresistor ageing state lossless detection method of dielectric spectroscopy based on optimization, feature exist
In including the following steps：
1) set temperature interval measures the frequency domain response characteristic of Zinc-oxide piezoresistor capacitance C at high temperature；
2) it calculates and drawsWith the relation spectrum of frequency f；
3) it takes under different temperatures TExtreme frequencies f in spectrogramm, it is lnf to draw out ordinatem, abscissa is
The spectrogram of 1000/T, and its activation energy is calculated by linear fit, activation energy corresponds to the interface of Zinc-oxide piezoresistor grain boundaries
State energy level.
2. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in that with the intensification of Zinc-oxide piezoresistor degree of aging, the work of interfacial state electron trap relaxation
Change can continuously decrease；The interfacial state energy order reaction Zinc-oxide piezoresistor of Zinc-oxide piezoresistor grain boundaries is obtained by step 3)
Ageing state.
3. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in that the temperature interval set in step 1) is 10 DEG C.
4. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in that high temperature described in step 1) refers to>120℃.
5. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in thatWith in the relation spectrum of frequency f, the π f of angular frequency=2.
6. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in thatWith in the relation spectrum of frequency f<103There are an extreme values under Hz frequencies
Point.
7. a kind of Zinc-oxide piezoresistor ageing state of dielectric spectroscopy based on optimization according to claim 1 is lossless
Detection method, which is characterized in that with the intensification of Zinc-oxide piezoresistor degree of aging, the work of interfacial state electron trap relaxation
Change can be gradually lowered to 0.89eV from 1.01eV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810570021.5A CN108548977B (en) | 2018-06-05 | 2018-06-05 | Nondestructive testing method for aging state of zinc oxide piezoresistor based on frequency domain dielectric spectrum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810570021.5A CN108548977B (en) | 2018-06-05 | 2018-06-05 | Nondestructive testing method for aging state of zinc oxide piezoresistor based on frequency domain dielectric spectrum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108548977A true CN108548977A (en) | 2018-09-18 |
| CN108548977B CN108548977B (en) | 2020-05-19 |
Family
ID=63493597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810570021.5A Active CN108548977B (en) | 2018-06-05 | 2018-06-05 | Nondestructive testing method for aging state of zinc oxide piezoresistor based on frequency domain dielectric spectrum |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108548977B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110133460A (en) * | 2019-05-30 | 2019-08-16 | 国网湖南省电力有限公司 | The ageing properties of zinc oxide resistance sheet test appraisal procedure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103166A (en) * | 2010-11-30 | 2011-06-22 | 西安交通大学 | Method for lossless detection on performance evaluation of ZnO piezoresistor |
-
2018
- 2018-06-05 CN CN201810570021.5A patent/CN108548977B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103166A (en) * | 2010-11-30 | 2011-06-22 | 西安交通大学 | Method for lossless detection on performance evaluation of ZnO piezoresistor |
Non-Patent Citations (4)
| Title |
|---|
| KANGNING WU等: "Space charge polarization modulated instability of low frequency permittivity in CaCu3Ti4O12 ceramics", 《APPLIED PHYSICS LETTERS》 * |
| KANGNING WU等: "Understanding of DC Degradation of ZnO Varistor Ceramics from the Aspect of High-temperature Relaxation", 《12TH IEEE INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS，XI"AN，CHINA》 * |
| 李盛涛等: "ZnO压敏陶瓷中缺陷的介电谱研究", 《物理学报》 * |
| 赵学童等: "ZnO压敏陶瓷缺陷结构表征及冲击老化机理研究", 《物理学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110133460A (en) * | 2019-05-30 | 2019-08-16 | 国网湖南省电力有限公司 | The ageing properties of zinc oxide resistance sheet test appraisal procedure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108548977B (en) | 2020-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Alim et al. | Complex plane analysis of trapping phenomena in zinc oxide based varistor grain boundaries | |
| CN107505542A (en) | Measuring method based on depolarization current method detection XLPE cable degree of aging | |
| CN105676081B (en) | Direct current cables based on ultralow frequency dielectric loss squeezes out insulation ag(e)ing state evaluating method | |
| CN108548977A (en) | A kind of Zinc-oxide piezoresistor ageing state lossless detection method of the dielectric spectroscopy based on optimization | |
| Tiwana et al. | On the anomalous charging and discharging currents in LDPE under high electric fields | |
| CN106199246B (en) | A kind of rapid detection method of composite insulator degree of aging | |
| Das et al. | A novel approach to estimate the quantity of ingressed moisture content inside metal oxide surge arrester using dielectric modulus technique | |
| Varivodov et al. | Permissible electrical-field intensities in the cast epoxy insulation of a 6-to 110-kV switchgear | |
| CN110333382B (en) | Three-layer sample structure and method for measuring ionization current characteristics of insulating material | |
| Hascoat et al. | Study and analysis of conduction mechanisms and space charge accumulation phenomena under high applied DC electric field in XLPE for HVDC cable application | |
| Zavattoni et al. | Dark current measurements in pressurized SF 6: influence of relative humidity and temperature | |
| Belmecheri et al. | Insulating and thermal aging dielectric properties dependency of transformer oil using spectroscopy techniques | |
| Zhu et al. | Trap parameters analysis of oil-paper insulation by thermally stimulated depolarization current | |
| Bokoro et al. | The impact of harmonics on the V− I characteristic of ZnO varistors | |
| Noah et al. | Measurement of space charge distribution in alumina-filled epoxy resin for application in HVDC GIS | |
| Peng et al. | Investigating the impacts of temperature on the dielectric response of oil-paper insulation system | |
| CN108535612B (en) | SF6 insulating sleeve insulation detection database construction method and detection method and device thereof | |
| CN107390102B (en) | High-field surface trap evaluation system | |
| CN113033041A (en) | Method for predicting direct-current breakdown field intensity of polyethylene nanocomposite based on trap level | |
| Zhang et al. | Investigation on space charge behavior in water tree aged crosslinked polyethylene (XLPE) cable by experiment and simulation | |
| Zhao et al. | Time-domain dielectric response characteristics of XLPE cable insulation under different water conten | |
| Pająk et al. | Influence of environmental exposures on electrical parameters of low voltage surge arresters | |
| Vissouvanadin et al. | A methodology for the assessment of HVDC-XLPE cable insulation | |
| Diban et al. | The Effect of Superimposed Switching Impulses on Space Charge Accumulation in XLPE-insulated HVDC Cables | |
| Abou Dakka et al. | Polarization and depolarization current response of XLPE insulation subjected to wet-aging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |