CN108546990A - A kind of method and apparatus improving polysilicon grain boundary defect - Google Patents
A kind of method and apparatus improving polysilicon grain boundary defect Download PDFInfo
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- CN108546990A CN108546990A CN201810688074.7A CN201810688074A CN108546990A CN 108546990 A CN108546990 A CN 108546990A CN 201810688074 A CN201810688074 A CN 201810688074A CN 108546990 A CN108546990 A CN 108546990A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention discloses a kind of method and apparatus improving polysilicon grain boundary defect, wherein method includes：Judge whether the silicon material in current ingot furnace is in molten condition；If so, the silicon material into the ingot furnace is passed through protium dopant；Judge the silicon material in presently described ingot furnace whether in long brilliant ending phase；If so, the silicon material stopped into the ingot furnace is passed through protium dopant.By the silicon material in current polycrystalline ingot furnace in molten condition, it is passed through protium dopant, terminate after long crystalline substance terminates, by the hydrogen atom in dopant come the dangling bonds for the silicon that terminates, significantly reduce the recombination rate on silicon crystal surface, the hydrogen atom of high concentration can be introduced in silicon substrate, hydrogen degree of passivation is more thorough, simultaneously because the process for being passed through protium dopant is synchronous with casting ingot process, it will not the additional process time, it is only necessary to preserve device of the device of gas without additionally increasing other hydrogen passivation, it is very limited to increase cost, technical process is simple.
Description
Technical field
The present invention relates to polycrystalline cast ingot technical fields, more particularly to a kind of method and dress improving polysilicon grain boundary defect
It sets.
Background technology
Due to the continuous maturation of photovoltaic cell technology, cost of electricity-generating declines to a great extent, to obtain more massive answer
With with irreplaceable role in terms of substituting new energy, environmental protection.
Solar cell as the semi-conducting material of matrix to proposing two most important requirements：High-purity and height is complete.
High-purity refers to that impurity in semi-conducting material is few；High refers to completely the perfection of lattice height of semi-conducting material.This is because partly leading
Impurity and lattice defect in body can make the compound consume of electrons and holes that illumination generates, and cause under the carrier quantity being collected
Drop is to make the photoelectric conversion efficiency of solar cell reduce.
Passivation is reduction defect and one of the effective means of harm that impurity band comes, and hydrogen passivation is using hydrogen atom come eventually
Surface dangling bonds are tied, the composite reactive of crystal boundary in silicon can be effectively reduced.Hydrogen atom in crystalline silicon has very strong reaction
Activity, it can with light-element impurities and its compound precursor reactant, with foreign atom boron, phosphorus reaction；It is reacted with transition metal impurity；
It is combined with silicon dangling bonds, is enriched in plane of crystal, crystal boundary, dislocation region.Therefore hydrogen passivation, using hydrogen atom and other impurities and
Reacting to be passivated the composite reactive in these complex centres for defect, improves the service life of minority carrier in silicon crystal.
There are following four classes frequently with the method for Surface Hydrogen passivating technique at present：
1, it does and heats in nitrogen atmosphere；
2, processing is diffused with hydrogen gas plasma；
3, pass through the SiN rich in hydrogen of plasma enhanced chemical vapor depositionx:H film layers；
4, the injection of ionized hydrogen atom.
In above-mentioned several common hydrogen passivating techniques, since hydrogen atom is very slow by the diffusion rate of wafer surface, 1
Hydrogen passivation technology in~3 methods generally required as long as a few hours so that the time of entire technological process substantially extends；Although side
Hydrogen ion is injected into chip using traditional Kaufman wide ion beam source in method 4, the process time understands relative reduction, but in practical work
In industry application, the mass production of solar cell needs the ion beam source of array large area can be only achieved, the ion of such specification
Beam source device is costly and complicated system, meanwhile, in process the acceleration electrode in Kaufman ion beam source can by ion Hong
The metallic particles for hitting, and being sputtered out can become pollution sources, may lead to the performance degradation of solar cell.
Above hydrogen passivating method is implemented in battery-end technology, generally existing hydrogen passivation time excessive cycle, or
The costly and complicated system of required equipment, is unfavorable for industrial practical application.
Invention content
The object of the present invention is to provide a kind of method and apparatus improving polysilicon grain boundary defect, hydrogen passivation technology letters
Single, hydrogen passivating device simple installation, hydrogen passivation will not additionally increase the time, can effectively reduce hydrogen passivation cost, improve passivation
Effect.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of method improving polysilicon grain boundary defect, packet
It includes：
Judge whether the silicon material in current ingot furnace is in molten condition；
If so, the silicon material into the ingot furnace is passed through protium dopant；
Judge the silicon material in presently described ingot furnace whether in long brilliant ending phase；
If so, the silicon material stopped into the ingot furnace is passed through protium dopant.
Wherein, the protium dopant is at least one of ammonia, hydrogen gas.
Wherein, the silicon material into the ingot furnace is passed through protium dopant, further includes：
Detect and export the amount that the current and accumulative silicon material in the ingot furnace is passed through protium dopant.
Wherein, further include：
Judge whether the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace reaches and the casting
The protium dopant intake of silicon material quality matches in ingot stove；
If so, the silicon material stopped into the ingot furnace is passed through protium dopant.
Wherein, the silicon material into the ingot furnace is passed through protium dopant, including：
Silicon material into the ingot furnace is passed through the protium dopant of predetermined temperature range.
In addition to this, the embodiment of the present invention additionally provides a kind of device improving polysilicon grain boundary defect, including：
Protium adulterates device, and the protium doping device is connect with polycrystalline ingot furnace, for in the polycrystalline ingot furnace
Silicon material be passed through protium dopant；
Silicon material state detector, the silicon material state detector is connect with the polycrystalline ingot furnace, described more for detecting
The state of silicon material in brilliant ingot furnace；
Protium adulterates controller, the protium doping controller and protium doping device, the silicon material state
Detector connects, the silicon material state of the polycrystalline ingot furnace for receiving the silicon material state detector, in the silicon material shape
After state is in molten condition, controls silicon material of the protium doping device into the polycrystalline ingot furnace and be passed through protium doping
Agent, silicon material in the ingot furnace, which is in after long brilliant ending phase the silicon material stopped into the ingot furnace and is passed through protium, mixes
Miscellaneous dose.
Wherein, further include adulterating the flowmeter that device is connect with the protium, the protium for detecting current is mixed
The output speed of miscellaneous device and the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace.
Wherein, further include adulterating the protium dopant that controller is connect with the flowmeter, the protium and being passed through to stop
Only device is monitoring that the flowmeter detects that the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace reaches
When with the protium dopant intakes of the silicon material quality matches in the ingot furnace, control the protium doping device stop it is defeated
Go out protium dopant.
Wherein, further include the heater being connect with protium doping device, for exporting protium doping device
Protium dopant be heated to predetermined temperature range
The method and apparatus for the improvement polysilicon grain boundary defect that the embodiment of the present invention is provided, compared with prior art, tool
It has the advantage that：
The method and apparatus for improving polysilicon grain boundary defect, by the silicon material in current polycrystalline ingot furnace molten
When melting state, it is passed through protium dopant, is terminated after long crystalline substance terminates, by the hydrogen atom in dopant come the outstanding of the silicon that terminates
Key is hung, the recombination rate on silicon crystal surface is significantly reduced, the hydrogen atom of high concentration can be introduced in silicon substrate so that hydrogen is passivated
More thoroughly, simultaneously because the process for being passed through protium dopant is synchronous with casting ingot process, will not the additional process time, and
It is only necessary to preserve the device of gas will not additionally increase the device of other hydrogen passivation, increased cost is very limited, technique mistake
Journey is simple.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of step of specific implementation mode of the method provided in an embodiment of the present invention for improving polysilicon grain boundary defect
Rapid flow diagram；
Fig. 2 is a kind of knot of specific implementation mode of the device provided in an embodiment of the present invention for improving polysilicon grain boundary defect
Structure schematic diagram.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
~Fig. 2 is please referred to Fig.1, Fig. 1 is one kind of the method provided in an embodiment of the present invention for improving polysilicon grain boundary defect
The step flow diagram of specific implementation mode；Fig. 2 is the device provided in an embodiment of the present invention for improving polysilicon grain boundary defect
A kind of specific implementation mode structural schematic diagram.
In a specific embodiment, the method for improving polysilicon grain boundary defect, including：
Step 1, judge whether the silicon material in current ingot furnace is in molten condition；Judge that silicon material is in melting in the present invention
State solid silicon material and the mixing of protium dopant and is reacted in table to be passed through protium dopant in next step
Face, hydrogen passivation effect is poor, and the silicon material of molten condition has mobility, with hydrogen due to having there is part silicon material to be in liquid
The combination of elemental dopant is more abundant, and is not limited solely to surface, can reach and improve hydrogen passivation effect, and high temperature energy
Enough diffusions for further promoting protium dopant, to improve the effect and rate of hydrogen passivation.
If so, step 2, the silicon material into the ingot furnace is passed through protium dopant；
Step 3, judge the silicon material in presently described ingot furnace whether in long brilliant ending phase；After long crystalline substance terminates,
The meaning of protium dopant being passed through is little, because this is fully to have realized passivation, next step stopping is passed through can
Reduce the waste of material.
If so, step 4, stops the silicon material into the ingot furnace and is passed through protium dopant.
By the silicon material in current polycrystalline ingot furnace in molten condition, it is passed through protium dopant, in long brilliant knot
Terminate after beam, by the hydrogen atom in dopant come the dangling bonds for the silicon that terminates, significantly reduce the recombination rate on silicon crystal surface,
The hydrogen atom of high concentration can be introduced in silicon substrate, hydrogen is passivated more thorough, simultaneously because being passed through protium dopant
Process is synchronous with casting ingot process, will not the additional process time, and will not additionally increase it is only necessary to preserve the device of gas
The device of other hydrogen passivation, increased cost is very limited, technical process is simple.
The present invention of specific material in to(for) protium dopant is not specifically limited, and the protium dopant can be
At least one of ammonia, hydrogen gas, or be other gases that hydrogen atoms can be decomposited at 1500 DEG C or less.
In order to save material, under the premise of ensureing hydrogen passivation effect, hydrogen passivation is reduced, in one embodiment of the present of invention
In, the silicon material into the ingot furnace is passed through protium dopant, further includes：
Detect and export the amount that the current and accumulative silicon material in the ingot furnace is passed through protium dopant.
By detecting the current amount for being passed through protium dopant, impurity can be controlled and be passed through plastics, ensure reaction process
Middle hydrogen passivation effect reaches best.For example, be in molten condition and long crystalline state in silicon material, the temperature of silicon material and be passed through
The joint efficiency of protium dopant can vary widely, by checking the current amount for being passed through protium dopant, i.e., logical
The optimum value for entering the i.e. controllable Current Temperatures of rate and the rate for being passed through protium dopant in ingot casting flow, i.e., do not waste
Dopant, and can realize best hydrogen passivation effect.
In addition, during hydrogen is passivated, if realizing the passivation of totally inactivating or predetermined ratio, need to be passed through hydrogen member
The amount of plain dopant is fixed, the detection of the amount by adding up to be passed through the silicon material in the ingot furnace protium dopant,
The waste that protium dopant can be reduced avoids the occurrence of silicon material and has been carried out expected passivation but show what is be continually fed into
As reducing waste.
It is, of course, also possible to reduce the waste of protium dopant in other manners, Dunhua efficiency is improved, that is, passes through inspection
The variation for surveying its air pressure can consume a part of protium impurity, air pressure during being passed through protium dopant and being passivated
It can reduce, go up if its air pressure inside occurs in a certain stage and be in the stabilization sub stage, illustrate hydrogen passivation also very
Thoroughly, the silicon material that can stop into the ingot furnace is passed through protium dopant.
The amount that the protium dopant of hydrogen passivation occurs is needed to be to determine for the silicon material of predetermined quality in the present invention,
In order to judge whether to have completed scheduled hydrogen passivation, waste of material, in one embodiment of the invention, the improvement are reduced
The method of polysilicon grain boundary defect further includes：
Judge whether the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace reaches and the casting
The protium dopant intake of silicon material quality matches in ingot stove；
If so, the silicon material stopped into the ingot furnace is passed through protium dopant.
After having judged that hydrogen passivation has been completed, you can stop the silicon material into the ingot furnace and be passed through protium mixing
It miscellaneous dose, reduces the invalid of invalid protium dopant and is passed through, reduce cost.
And in order to further increase hydrogen passivation effect and rate, it is described to described in the one embodiment invented herein
Silicon material in ingot furnace is passed through protium dopant, including：
Silicon material into the ingot furnace is passed through the protium dopant of predetermined temperature range.
After the protium dopant of room temperature or low temperature is passed through, the heat in ingot furnace can be absorbed, or even if be passed through
When rate is too fast, it may occur that reduce ingot casting efficiency, increase the ingot casting period, caused to existing casting ingot process flow certain negative
Effect, and it is passed through the protium dopant of predetermined temperature, existing casting ingot process will not be adversely affected, and high temperature
Protium dopant the joint efficiency that can also be improved in hydrogen passivating process with silicon atom, improve passivation efficiency.
In addition to this, the embodiment of the present invention additionally provides a kind of device improving polysilicon grain boundary defect, including：
Protium adulterates device 20, and the protium doping device 20 is connect with polycrystalline ingot furnace 10, for being cast for the polycrystalline
Silicon material in ingot stove 10 is passed through protium dopant；
Silicon material state detector 30, the silicon material state detector 30 is connect with the polycrystalline ingot furnace 10, for detecting
The state of silicon material in the polycrystalline ingot furnace 10；
Protium adulterates controller 40, the protium doping controller 40 and protium doping device 20, the silicon
Expect that state detector 30 connects, the silicon material state of the polycrystalline ingot furnace 10 for receiving the silicon material state detector 30,
After the silicon material state is in molten condition, silicon material of the protium doping device 20 into the polycrystalline ingot furnace 10 is controlled
It is passed through protium dopant, the silicon material in the polycrystalline ingot furnace 10 stops after being in long brilliant ending phase to the ingot furnace
In silicon material be passed through protium dopant.
Due to it is described improve polysilicon grain boundary defect device be improvement polysilicon grain boundary defect method device,
Should advantageous effect having the same, that is, improve hydrogen passivation effect, additional hydrogen passivation time, and increased hydrogen will not be increased
Element doping device 20 is it is only necessary to preserve gas, and the device without increasing other hydrogen passivation being capable of effective control cost.Its
Middle silicon material state detector 30 is to check that the state of silicon material can also use artificial detection to achieve the effect that automation
Mode, and protium doping controller 40 is only comparable to a valve, therefore the increased cost of whole device has very much
Limit, and structure is also simple enough, using simple.
In order to further realize to the monitoring of hydrogen passivating process, improve passivation effect, the utilization ratio of material is improved, in this hair
In bright one embodiment, the device for improving polysilicon grain boundary defect further includes being connect with protium doping device 20
Flowmeter adulterates the output speed of device 20 and accumulative to the silicon material in the ingot furnace for detecting the current protium
It is passed through the amount of protium dopant.
By using flowmeter, record current protium dopant is passed through rate and accumulative intake, can
Realize the rate that is passed through to controlling different protium dopants at different temperature and silicon material state, and according to totality
Silicon material quality controls accumulative intake, can in a certain range expected from completion hydrogen passivation after, stopping is passed through
Protium dopant reduces the waste of protium dopant, improves utilization ratio.
Therefore in one embodiment of the invention, the device for improving polysilicon grain boundary defect further includes and the stream
The protium dopant that gauge, protium doping controller 40 connect is passed through stopper, is monitoring the flowmeter inspection
The accumulative amount for being passed through the silicon material in the ingot furnace protium dopant is measured to reach and the silicon material quality in the ingot furnace
When matched protium dopant intake, controls the protium doping device 20 and stop output protium dopant.
By the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace reach in the ingot furnace
Silicon material quality matches protium dopant intake when, control protium doping device 20 and stop output protium doping
Agent realizes and is maximized to the utilization ratio of protium dopant that certainly, which is passed through stopper, can also lead to
The other hydrogen passivating process of monitoring are crossed, control protium dopant stopping is dissolved in, such as the air pressure in detection ingot furnace, is being passed through
Under the premise of rate is constant, the rate of the protium dopant of hydrogen passivation consumption is substantially certain, after completing hydrogen passivation, hydrogen
Elemental dopant does not consume even after continuing to be passed through since consumption is reduced so that the air pressure in ingot furnace rises, therefore can
After rising to certain value in its air pressure, judgement completes hydrogen passivation, can stop being passed through for protium dopant, avoid making
At waste, the utilization ratio of material is improved.
After the protium dopant of room temperature or low temperature is passed through, the heat in ingot furnace can be absorbed, or even if be passed through
When rate is too fast, it may occur that reduce ingot casting efficiency, increase the ingot casting period, caused to existing casting ingot process flow certain negative
Effect, in order to solve this problem, in one embodiment of the invention, the method and dress for improving polysilicon grain boundary defect
It further includes the heater being connect with protium doping device 20 to set, the protium for exporting protium doping device 20
Dopant is heated to predetermined temperature range.
It is passed through the protium dopant of predetermined temperature, existing casting ingot process will not be adversely affected, Er Qiegao
The joint efficiency that can also be improved in hydrogen passivating process with silicon atom of the protium dopant of temperature improves passivation efficiency.
In conclusion the method and apparatus provided in an embodiment of the present invention for improving polysilicon grain boundary defect, by current
Polycrystalline ingot furnace in silicon material in molten condition, be passed through protium dopant, long crystalline substance terminate after terminate, pass through doping
Hydrogen atom in agent significantly reduces the recombination rate on silicon crystal surface, can be introduced in silicon substrate come the dangling bonds for the silicon that terminates
The hydrogen atom of high concentration, hydrogen is passivated more thorough, simultaneously because the process for being passed through protium dopant is synchronous with casting ingot process,
Will not the additional process time, and will not additionally increase the device of other hydrogen passivation it is only necessary to preserve the device of gas, increase
The cost that adds is very limited, technical process is simple.
The method and apparatus of kind polysilicon grain boundary defect provided by the present invention are described in detail above.Herein
Applying specific case, principle and implementation of the present invention are described, and the explanation of above example is only intended to help
Understand the method and its core concept of the present invention.It should be pointed out that for those skilled in the art, not taking off
, can be with several improvements and modifications are made to the present invention under the premise of from the principle of the invention, these improvement and modification also fall into this
In invention scope of the claims.
Claims (9)
1. a kind of method improving polysilicon grain boundary defect, which is characterized in that including：
Judge whether the silicon material in current ingot furnace is in molten condition；
If so, the silicon material into the ingot furnace is passed through protium dopant；
Judge the silicon material in presently described ingot furnace whether in long brilliant ending phase；
If so, the silicon material stopped into the ingot furnace is passed through protium dopant.
2. improving the method for polysilicon grain boundary defect as described in claim 1, which is characterized in that the protium dopant is ammonia
At least one of gas, hydrogen gas.
3. improving the method for polysilicon grain boundary defect as claimed in claim 2, which is characterized in that described into the ingot furnace
Silicon material is passed through protium dopant, further includes：
Detect and export the amount that the current and accumulative silicon material in the ingot furnace is passed through protium dopant.
4. improving the method for polysilicon grain boundary defect as claimed in claim 3, which is characterized in that further include：
Judge whether the accumulative amount that protium dopant is passed through to the silicon material in the ingot furnace reaches and the ingot furnace
In silicon material quality matches protium dopant intake；
If so, the silicon material stopped into the ingot furnace is passed through protium dopant.
5. improving the method for polysilicon grain boundary defect as claimed in claim 4, which is characterized in that described into the ingot furnace
Silicon material is passed through protium dopant, including：
Silicon material into the ingot furnace is passed through the protium dopant of predetermined temperature range.
6. a kind of device improving polysilicon grain boundary defect, which is characterized in that including：
Protium adulterates device, and the protium doping device is connect with polycrystalline ingot furnace, for being the silicon in the polycrystalline ingot furnace
Material is passed through protium dopant；
Silicon material state detector, the silicon material state detector are connect with the polycrystalline ingot furnace, for detecting the polycrystalline casting
The state of silicon material in ingot stove；
Protium adulterates controller, the protium doping controller and protium doping device, the silicon material state-detection
Device connects, the silicon material state of the polycrystalline ingot furnace for receiving the silicon material state detector, at the silicon material state
After molten condition, controls silicon material of the protium doping device into the polycrystalline ingot furnace and be passed through protium dopant,
Silicon material in the ingot furnace is in the silicon material stopped into the ingot furnace after long brilliant ending phase and is passed through protium dopant.
7. improving the device of polysilicon grain boundary defect as claimed in claim 6, which is characterized in that further include being mixed with the protium
The flowmeter of miscellaneous device connection adulterates the output speed of device and accumulative to the ingot furnace for detecting the current protium
In silicon material be passed through the amount of protium dopant.
8. as claimed in claim 7 improve polysilicon grain boundary defect device, which is characterized in that further include with the flowmeter,
The protium dopant of the protium doping controller connection is passed through stopper, is monitoring that it is accumulative that the flowmeter detects
The amount that protium dopant is passed through to the silicon material in the ingot furnace reaches hydrogen with the silicon material quality matches in the ingot furnace
When elemental dopant intake, controls the protium doping device and stop output protium dopant.
9. improving the device of polysilicon grain boundary defect as claimed in claim 8, which is characterized in that further include being mixed with the protium
The heater of miscellaneous device connection, for the protium dopant of protium doping device output to be heated to predetermined temperature range.
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| CN109554752A (en) * | 2018-12-26 | 2019-04-02 | 赛维Ldk太阳能高科技(新余)有限公司 | Polycrystalline silicon ingot or purifying furnace, polycrystalline silicon ingot casting method and polycrystal silicon ingot |
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| CN109252214A (en) * | 2018-11-23 | 2019-01-22 | 包头美科硅能源有限公司 | A method of improving polycrystalline silicon ingot or purifying furnace furnace atmosphere cleanliness |
| CN109554752A (en) * | 2018-12-26 | 2019-04-02 | 赛维Ldk太阳能高科技(新余)有限公司 | Polycrystalline silicon ingot or purifying furnace, polycrystalline silicon ingot casting method and polycrystal silicon ingot |
| CN110767774A (en) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Method for manufacturing TOPCon solar cell and method and equipment for crystallizing amorphous silicon of TOPCon solar cell |
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