CN108538765B - Etching device and pattern transfer method - Google Patents
Etching device and pattern transfer method Download PDFInfo
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- CN108538765B CN108538765B CN201810433250.2A CN201810433250A CN108538765B CN 108538765 B CN108538765 B CN 108538765B CN 201810433250 A CN201810433250 A CN 201810433250A CN 108538765 B CN108538765 B CN 108538765B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
Abstract
The embodiment of the invention discloses an etching device and a pattern transfer method, wherein the etching device comprises: an atomic force microscope comprising a conductive probe; and the conductive probe electron beam electric field generating module comprises a current control unit, and an electric signal output end of the current control unit is used for generating an electric signal which enables the conductive probe tip to emit a field emission electron beam. According to the technical scheme of the embodiment of the invention, the electron beam is emitted by the emitting field of the conductive probe tip of the atomic force microscope to etch the organic layer on the surface of the sample to be etched to form the preset pattern, and the preset pattern is transferred to the surface of the sample to be etched by the plasma etching method, so that the preparation cost is reduced, and the resolution of the etched pattern is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of micro-nano processing of semiconductor devices, in particular to an etching device and a pattern transfer method.
Background
Advances in nanotechnology depend largely on the ability to fabricate nanostructures. Many structures such as nanoparticles, nanowires, and some two-dimensional materials such as graphene, molybdenum disulfide, etc. need to be capable of nanoelectronic, photonic, and biological applications.
Therefore, appropriate processing equipment is required to prepare the nano-devices from the materials. While conventional processing techniques can meet some of the above requirements, there are many challenges to improving integration and performance of nanoscale devices. In the process of processing the material into a nanometer device, secondary electrons can be generated by using the traditional electron beam etching equipment during electron beam exposure and have a backscattering effect, so that the resolution of an etched image on the surface of a sample to be etched is low, and the cost is high.
Disclosure of Invention
In view of this, embodiments of the present invention provide an etching apparatus and a pattern transfer method, which reduce the preparation cost of etching by an etching device and improve the resolution of an etched pattern.
In a first aspect, an embodiment of the present invention provides an etching apparatus, including:
an atomic force microscope comprising a conductive probe; and the number of the first and second groups,
and the conductive probe tip emits a field emission electron beam, and the electric beam field generation module comprises a current control unit, wherein an electric signal output end of the current control unit is used for generating an electric signal which enables the conductive probe tip to emit the field emission electron beam.
Optionally, the conductive probe tip electron beam electric field generating module further includes a voltage amplifier, an input end of the voltage amplifier is electrically connected to the electrical signal output end of the current control unit, and the voltage amplifier is configured to amplify the electrical signal output by the electrical signal output end of the current control unit, so that the conductive probe tip emits an electrical signal of a field emission electron beam.
Optionally, the conductive probe electron beam electric field generating module further comprises a current detecting unit;
the current signal input end of the current detection unit is electrically connected with the conductive probe and is used for detecting the current formed by the field emission electron beam emitted by the conductive probe tip in real time;
and the current signal detection end of the current control unit is electrically connected with the current signal output end of the current detection unit and is used for sending the current formed by the field emission electron beam emitted by the conductive probe tip to the current control unit.
Optionally, the conductive probe electron beam electric field generating module further comprises a sample stage and a sample stage driving unit;
the control signal output end of the current control unit is electrically connected with the control signal input end of the sample stage driving unit and used for sending a control signal to the sample stage driving unit, the driving end of the sample stage driving unit is mechanically connected with the sample stage, and the sample stage driving unit is used for adjusting the distance between the sample stage and the conductive probe according to the control signal.
Optionally, the atomic force microscope further includes a control unit, and a control signal output end of the control unit of the atomic force microscope is electrically connected to a control signal input end of the current control unit.
In a second aspect, an embodiment of the present invention provides a method for transferring a pattern, including:
providing a sample to be etched;
forming an organic layer on the first surface of the sample to be etched, wherein the organic layer is uniformly distributed on the first surface of the sample to be etched;
removing part of the self-oxidation layer on a second surface of the sample to be etched, which is opposite to the first surface;
etching the organic layer by using the etching device of any one of claims 1 to 5 to form a preset pattern on the organic layer, wherein the electrical signal output end of the current control unit is electrically connected with the part of the second surface of the sample to be etched, from which part of the self-oxidation layer is removed;
and taking the organic layer as a masking layer, carrying out plasma etching on the sample to be etched, and transferring the preset pattern onto the first surface of the sample to be etched.
Optionally, the forming an organic layer on the first surface of the sample to be etched, where the organic layer uniformly distributed on the first surface of the sample to be etched specifically includes:
preparing an organic solution, wherein a solvent of the organic solution comprises chlorobenzene, and a solute of the organic solution comprises organic molecule 4-methyl-1-acetoxy calix [6] arene with the mass fraction of more than or equal to 0.2% and less than or equal to 0.7%;
heating the organic solution at a first preset temperature for a first preset time, and uniformly and rotationally coating the organic solution on the first surface of the sample to be etched to form an organic film layer;
heating the organic film layer at a second preset temperature for a second preset time to form an organic layer;
the organic layer has a thickness in a range of greater than or equal to 8 nanometers and less than or equal to 12 nanometers.
Optionally, when the sample to be etched is subjected to plasma etching, the temperature range of the plasma etching is greater than or equal to minus 120 ℃ and less than or equal to minus 100 ℃;
the plasma etching gas comprises sulfur hexafluoride and oxygen;
the gas flow rate ranges from greater than or equal to 25 standard milliliters per minute to less than or equal to 35 standard milliliters per minute.
Optionally, the etching the organic layer by using the etching apparatus according to any one of claims 1 to 5, and forming the preset pattern on the organic layer specifically includes:
acquiring the surface appearance of the organic layer by using the atomic force microscope, and selecting a flat area as an area to be etched;
and a conductive probe tip of the atomic force microscope emits a field emission electron beam to etch the region to be etched of the organic layer so as to form a preset pattern on the organic layer.
Optionally, the voltage range electrically connected to the portion of the second surface of the sample to be etched, where the portion of the self-oxidation layer is removed, is greater than or equal to 30 volts and less than or equal to 50 volts;
the vertical distance range of the conductive probe from the organic layer is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.
The embodiment of the invention provides an etching device and a pattern transfer method, wherein an organic layer on the surface of a sample to be etched is etched by emitting an electron beam through a conductive probe tip of an atomic force microscope, so as to form a preset pattern, and the preset pattern is transferred to the surface of the sample to be etched through a plasma etching method, so that the preparation cost is reduced, and the resolution of the etched pattern is improved.
Drawings
Fig. 1 is a schematic structural diagram of an etching apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another etching apparatus according to an embodiment of the present invention;
fig. 3 is a schematic flowchart of a graph transfer method according to a second embodiment of the present invention;
fig. 4 is a schematic flowchart of another method for transferring a graphic according to a second embodiment of the present invention;
fig. 5 is a flowchart illustrating a further method for transferring a graphic according to a second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Referring to fig. 1, an embodiment of the present invention provides a schematic structural diagram of an etching apparatus, referring to fig. 1, the apparatus includes:
an atomic force microscope 100, the atomic force microscope 100 including a conductive probe 101; and a conductive probe electron beam electric field generating module 200, wherein the conductive probe electron beam electric field generating module 200 comprises a current control unit 201, and an electrical signal output end of the current control unit 201 is used for generating an electrical signal for enabling the conductive probe tip to emit a field emission electron beam. In this embodiment, the conductive probe is a silicon tip with a metal coating on the surface.
The etching device provided by the embodiment of the invention comprises a conductive probe of the atomic force microscope, which can emit field emission electron beams under the action of the electric signal of the current control unit, wherein the field emission electron beams can be used for etching materials to be etched according to a preset pattern. It should be noted that, compared with the conventional electron beam etching apparatus which needs thousands of volts to generate the electron beam for etching, the etching apparatus provided in the embodiment of the present invention uses the conductive probe of the atomic force microscope as the source for generating the electron beam, and the voltage needed to be provided to make the conductive probe tip emit the field emission electron beam only needs tens of volts, so that the cost is saved, and the energy consumption is reduced. Because the kilovolt voltage generates an electron beam for etching, the electron beam has high energy, and after reaching the surface of the sample, a large amount of secondary electrons and backscattered electrons are generated, and the secondary electrons and the backscattered electrons can remove materials on the surface of the sample, so that the resolution of a preset pattern etched on the surface of the sample can be greatly reduced. The etching device provided by the embodiment of the invention only needs dozens of volts of voltage which is needed to be provided and enables the electron beam emitted by the field emitted by the conductive probe tip to emit, the energy of the electron beam is lower, and after the electron beam reaches the surface of a sample, the quantity of generated secondary electrons and backscattered electrons is greatly reduced, so that the surface of the sample is etched by adopting the electron beam, and the resolution of a preset pattern etched on the surface of the sample is greatly improved.
It should be noted that, the etching apparatus in the embodiment of the present invention may etch the organic layer on the surface of the sample to be etched to form a predetermined pattern, and then etch the surface of the sample to be etched through an etching process.
According to the etching device provided by the embodiment of the invention, the electron beam is emitted by the emitting field of the conductive probe tip of the atomic force microscope to etch the organic layer on the surface of the sample to be etched to form the preset pattern, and the preset pattern is transferred to the surface of the sample to be etched by the plasma etching method, so that the preparation cost is reduced, and the resolution of the etched pattern is improved.
Optionally, on the basis of the above technical solution, referring to fig. 2, the conductive probe electron beam electric field generating module 200 further includes a voltage amplifier 202, an input end of the voltage amplifier 202 is electrically connected to an electrical signal output end of the current control unit 201, and the voltage amplifier 202 is configured to amplify an electrical signal output by the electrical signal output end of the current control unit 201, so that the conductive probe tip emits a field to emit an electron beam.
Optionally, on the basis of the above technical solution, referring to fig. 2, the conductive probe electron beam electric field generating module 200 further includes a current detecting unit 203; the current signal input end of the current detection unit 203 is electrically connected with the conductive probe 101 and is used for detecting the current formed by the field emission electron beam emitted by the tip of the conductive probe 101 in real time; the current signal detection end of the current control unit 201 is electrically connected with the current signal output end of the current detection unit 203, and is used for sending the current formed by the field emission electron beam emitted by the tip of the conductive probe 101 to the current control unit 201.
Optionally, on the basis of the above technical solution, referring to fig. 2, the conductive probe electron beam electric field generating module 200 further includes a sample stage 204 and a sample stage driving unit 205; a sample to be etched is placed on the sample stage 204, and an organic layer 301 is formed on the sample to be etched 300. For example, the sample to be etched may also be directly and fixedly connected to the stage driving unit 205 through an insulating adhesive. A control signal output end of the current control unit 201 is electrically connected with a control signal input end of the stage driving unit 205, and is configured to send a control signal to the stage driving unit, a driving end of the stage driving unit 205 is mechanically connected with the stage 204, and the stage driving unit 205 is configured to adjust a distance between the stage 204 and the conductive probe 101 according to the control signal. Thereby controlling the distance between the organic layer on the sample to be etched and the conductive probe 101. Illustratively, the stage driving unit 205 may be a piezoelectric ceramic tube, which adjusts a distance between the stage and the conductive probe under the control signal of the current control unit 201. Specifically, the piezoelectric ceramic tube increases or decreases the distance between the sample driving stage and the conductive probe under the control signal of the current control unit 201. Optionally, on the basis of the above embodiment, the conductive probe electron beam electric field generating module 200 further includes a current limiting unit 206, where the current limiting unit 206 may be a current limiting resistor, for example, to prevent the instantaneous current from being too large due to sudden short circuit of the whole circuit, and limit the current of the whole system loop.
Optionally, referring to fig. 2, based on the above technical solution, the atomic force microscope further includes a control unit 102, and a control signal output end of the control unit 102 of the atomic force microscope is electrically connected to a control signal input end of a current control unit 201. Optionally, referring to fig. 2, in the present embodiment, the atomic force microscope further includes a laser emission source 103, a laser position sensor 104, and a conductive probe position driving unit 105. The laser emitting source 103 irradiates laser onto the conductive probe 101, the micro-cantilever is provided with a reflection unit, the laser is reflected to the laser position sensor 104, the end of the conductive probe is mechanically connected with the micro-cantilever, the change of the position of the conductive probe corresponds to the deformation of the micro-cantilever, and the deformation of the micro-cantilever corresponds to the change of the laser position captured by the laser sensor, so that the laser sensor can detect the position of the conductive probe and transmit an electric signal corresponding to the position of the conductive probe to the control unit 102. Alternatively, the conductive probe position driving unit 105 is exemplified by a piezoelectric ceramic tube, and the movement of the conductive probe in the horizontal plane and the movement of the conductive probe perpendicular to the horizontal plane may be controlled according to a control signal of the control unit. Meanwhile, the atomic force microscope 100 can also acquire the surface topography of the sample to be etched on the sample stage in real time. The shape image of the sample to be etched synchronous with the etching process can be obtained in the etching process, the etching result is detected in real time, the etching parameters are adjusted in real time, and the yield of the etched pattern is ensured.
Example two
Based on the etching device provided by the embodiment, the embodiment of the invention provides an image transfer method. Taking the etching apparatus shown in fig. 2 as an example, fig. 3 is a schematic flow chart of a pattern transfer method according to an embodiment of the present invention. Referring to fig. 3, the method comprises the steps of:
step 310, providing a sample 300 to be etched. Illustratively, the sample to be etched is a silicon material.
Step 320, forming an organic layer 301 on the first surface of the sample 300 to be etched, wherein the organic layer 301 is uniformly distributed on the first surface of the sample 300 to be etched.
Step 330, removing a portion of the self-oxidized layer on a second surface of the sample 300 to be etched opposite to the first surface.
Step 340, etching the organic layer 301 by using the etching apparatus in the above embodiment, forming a preset pattern on the organic layer, and electrically connecting the electrical signal output end of the current control unit with the portion of the second surface of the sample to be etched, from which the self-oxidation layer is removed. Optionally, the voltage range electrically connected to the portion of the second surface of the sample to be etched, where the self-oxidation layer is partially removed, is greater than or equal to 30 volts and less than or equal to 50 volts; the vertical distance range of the conductive probe from the organic layer is greater than or equal to 8 nanometers and less than or equal to 12 nanometers. The suitable distance is favorable for the conductive probe 101 to perform point discharge under the action of the electric field. It should be noted that the conductive probe tip emits a field emission electron beam, and the field emission electron beam bombards the surface of the organic layer 301 to fragment and volatilize the organic layer to form a predetermined pattern of the etching structure.
And 350, taking the organic layer 301 as a masking layer, carrying out plasma etching on the sample 300 to be etched, and transferring a preset pattern to the first surface of the sample 300 to be etched. Optionally, when the sample to be etched is subjected to plasma etching, the temperature range of the plasma etching is greater than or equal to minus 120 ℃ and less than or equal to minus 100 ℃; the plasma etching gas comprises sulfur hexafluoride and oxygen; the gas flow rate ranges from greater than or equal to 25 standard milliliters per minute to less than or equal to 35 standard milliliters per minute. Illustratively, sulfur hexafluoride is adopted as the reaction gas for low-temperature plasma etching, oxygen is added, the gas flow rate is kept at 30 standard milliliters per minute, the retention time of the gas with the excessively high flow rate in the reaction chamber is shortened, the generated reactive ions are reduced, and the etching rate is reduced; on the other hand, if the flow rate is too low, the consumed reaction gas is not supplied in time, and the etching rate is also decreased. Illustratively, the plasma etching process is performed at minus 110 ℃, and in such a low-temperature environment, silicon tetrafluoride generated by the reaction is condensed on the surface of the sample to form a protective layer with a thickness of 10-20 nm, so that the reaction of fluorine radicals and silicon is greatly reduced, and the longitudinal etching is stopped to form a higher aspect ratio.
According to the pattern transfer method provided by the embodiment of the invention, the conductive probe tip of the atomic force microscope in the etching device provided by the embodiment emits the field emission electron beam to etch the organic layer on the surface of the sample to be etched to form the preset pattern, and the preset pattern is transferred to the surface of the sample to be etched by the plasma etching method, so that the preparation cost is reduced, and the resolution of the etched pattern is improved.
Optionally, on the basis of the foregoing technical solution, referring to fig. 4, step 320 is to form an organic layer on the first surface of the sample to be etched, where the organic layer is uniformly distributed on the first surface of the sample to be etched, and the method specifically includes the following steps:
3201 preparing an organic solution, wherein a solvent of the organic solution comprises chlorobenzene, and a solute of the organic solution comprises organic molecule 4-methyl-1-acetoxycalix [6] arene with the mass fraction of more than or equal to 0.2% and less than or equal to 0.7%; exemplary solvents for the organic solution include analytically pure chlorobenzene. The chemical formula of the organic molecule 4-methyl-1-acetoxycalix [6] arene is 4M1AC 6. It should be noted that the organic solution is an organic small molecule solution, and it is easier to uniformly spin-coat the organic solution on the first surface of the sample to be etched.
Step 3202, heating the organic solution at a first preset temperature for a first preset time, and uniformly spin-coating the organic solution on the first surface of the sample to be etched to form an organic film. Illustratively, the first predetermined temperature is in a range of greater than or equal to 100 degrees celsius and less than or equal to 140 degrees celsius. For example, the organic solution is preheated at 120 ℃ for two minutes, the spin coater is operated at 2000 rpm for 3 seconds, and then at 4000 rpm for 45 seconds, and the film formation can be performed at 2000 rpm for 3 seconds, and then at 4000 rpm for 45 seconds, on the first surface of the sample to be etched, so as to form the organic film layer.
3203 heating the organic film layer at a second predetermined temperature for a second predetermined time to form an organic layer; the organic layer has a thickness in a range of greater than or equal to 8 nanometers and less than or equal to 12 nanometers. After the film formation, the organic layer was heated on a hot stage at 175 degrees centigrade for five minutes. The thickness range of the organic layer is more than or equal to 8 nanometers and less than or equal to 12 nanometers, the surface structure is smooth, the damage degree to the atomic force microscope conductive probe 101 is reduced, and the etching life is prolonged.
Optionally, on the basis of the above technical solution, referring to fig. 5, step 340 specifically includes: the etching device in the above embodiment is used to etch the organic layer, and the forming of the preset pattern on the organic layer specifically includes:
and 3401, acquiring the surface topography of the organic layer by using the atomic force microscope 100, and selecting a flat area as an area to be etched. The rough surface is prevented from influencing the etching effect. Alternatively, this step may be implemented by the conductive probe 101, the laser emission source 103, the laser position sensor 104, and the control unit 102 of the atomic microscope. The control unit 102 of the atomic force microscope controls the conductive probe position driving unit 105 to drive the conductive probe to the origin position above the organic layer. Meanwhile, the control unit sends a control signal to the current control unit 201, and the current control unit 201 drives the sample stage driving unit to control the sample stage to drive the sample to be close to the conductive probe.
3402, emitting a field emission electron beam by the tip of the conductive probe 101 of the atomic force microscope 100, and etching the region to be etched of the organic layer 301 to form a preset pattern on the organic layer 301. In this step, the control unit controls the movement of the conductive probe position driving unit, and the conductive probe tip 101 emits a field emission electron beam to etch the region to be etched of the organic layer in the process of moving from the origin position to the end position under the driving of the conductive probe position driving unit, so as to form a preset pattern on the organic layer. Optionally, when the conductive probe 101 moves to the end point position under the driving of the conductive probe position driving unit, the process of forming the preset pattern on the organic layer is completed, and the control unit drives the conductive probe position driving unit to drive the conductive probe to return to the original point position. Meanwhile, the control unit sends a control signal to the current control unit 201, and the current control unit 201 drives the sample stage driving unit to control the sample stage to drive the sample to be far away from the conductive probe.
Optionally, the process of etching the organic layer of the sample to be etched by the field emission electron beam further includes: the current detection unit 203 detects the current formed by the field emission electron beam emitted by the tip of the conductive probe 101 in real time and sends the current formed by the field emission electron beam to the current control unit 201; according to the magnitude relationship between the current formed by the field emission electron beam and the current formed by the preset field emission electron beam, the current control unit 201 sends a control signal to the stage driving unit 205 to control the stage driving unit 205 to approach or depart from the conductive probe 101. Specifically, if the current formed by the field emission electron beam is smaller than the current formed by the preset field emission electron beam, the current control unit 201 sends a control signal to the sample stage driving unit 205, and the current control unit 201 controls the sample stage driving unit 205 to approach the conductive probe 101; if the current formed by the field emission electron beam is larger than the current formed by the preset field emission electron beam, the current control unit 201 sends a control signal to the stage driving unit 205, and the current control unit 201 controls the stage driving unit 205 to be far away from the conductive probe 101.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. An etching apparatus, comprising:
an atomic force microscope comprising a conductive probe; and the number of the first and second groups,
the conductive probe tip emits a field emission electron beam, and the electric signal output end of the current control unit is used for generating an electric signal which enables the conductive probe tip to emit the field emission electron beam;
the conductive probe electron beam electric field generating module further comprises a current detecting unit;
the current signal input end of the current detection unit is electrically connected with the conductive probe and is used for detecting the current formed by the field emission electron beam emitted by the conductive probe tip in real time;
the current signal detection end of the current control unit is electrically connected with the current signal output end of the current detection unit and is used for sending the current formed by the field emission electron beam emitted by the conductive probe tip to the current control unit;
the conductive probe electron beam electric field generation module further comprises a sample stage and a sample stage driving unit, wherein the sample stage driving unit comprises a piezoelectric ceramic tube;
a control signal output end of the current control unit is electrically connected with a control signal input end of the sample stage driving unit and is used for sending a control signal to the sample stage driving unit, a driving end of the sample stage driving unit is mechanically connected with the sample stage, and the sample stage driving unit is used for adjusting the distance between the sample stage and the conductive probe according to the control signal;
the thickness range of the organic sample to be etched is more than or equal to 8 nanometers and less than or equal to 12 nanometers;
the vertical distance range of the conductive probe from the organic sample to be etched is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.
2. Etching apparatus according to claim 1,
the conductive probe electron beam electric field generating module further comprises a voltage amplifier, an input end of the voltage amplifier is electrically connected with an electric signal output end of the current control unit, and the voltage amplifier is used for amplifying an electric signal which is output by the electric signal output end of the current control unit and enables the conductive probe tip to emit a field emission electron beam.
3. Etching apparatus according to claim 1,
the atomic force microscope further comprises a control unit, and a control signal output end of the control unit of the atomic force microscope is electrically connected with a control signal input end of the current control unit.
4. A method for transferring a pattern, comprising:
providing a sample to be etched;
forming an organic layer on the first surface of the sample to be etched, wherein the organic layer is uniformly distributed on the first surface of the sample to be etched;
removing part of the self-oxidation layer on a second surface of the sample to be etched, which is opposite to the first surface;
etching the organic layer by using the etching device of any one of claims 1 to 3, forming a preset pattern on the organic layer, wherein the electrical signal output end of the current control unit is electrically connected with the part of the second surface of the sample to be etched, from which part of the self-oxidation layer is removed;
and taking the organic layer as a masking layer, carrying out plasma etching on the sample to be etched, and transferring the preset pattern onto the first surface of the sample to be etched.
5. The method for transferring a pattern according to claim 4,
the forming of the organic layer on the first surface of the sample to be etched includes:
preparing an organic solution, wherein a solvent of the organic solution comprises chlorobenzene, and a solute of the organic solution comprises organic molecule 4-methyl-1-acetoxy calix [6] arene with the mass fraction of more than or equal to 0.2% and less than or equal to 0.7%;
heating the organic solution at a first preset temperature for a first preset time, and uniformly and rotationally coating the organic solution on the first surface of the sample to be etched to form an organic film layer;
heating the organic film layer at a second preset temperature for a second preset time to form an organic layer;
the organic layer has a thickness in a range of greater than or equal to 8 nanometers and less than or equal to 12 nanometers.
6. The method for transferring a pattern according to claim 4,
when the sample to be etched is subjected to plasma etching, the temperature range of the plasma etching is more than or equal to minus 120 ℃ and less than or equal to minus 100 ℃;
the plasma etching gas comprises sulfur hexafluoride and oxygen;
the gas flow rate ranges from greater than or equal to 25 standard milliliters per minute to less than or equal to 35 standard milliliters per minute.
7. The method for transferring a pattern according to claim 4,
the etching of the organic layer by using the etching apparatus of any one of claims 1 to 3, wherein the forming of the predetermined pattern on the organic layer specifically includes:
acquiring the surface appearance of the organic layer by using the atomic force microscope, and selecting a flat area as an area to be etched;
and a conductive probe tip of the atomic force microscope emits a field emission electron beam to etch the region to be etched of the organic layer so as to form a preset pattern on the organic layer.
8. The method for transferring a pattern according to claim 7,
the voltage range electrically connected with the part of the second surface of the sample to be etched, which removes the partial self-oxidation layer, is more than or equal to 30 volts and less than or equal to 50 volts;
the vertical distance range of the conductive probe from the organic layer is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.
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| CN110526203A (en) * | 2019-08-02 | 2019-12-03 | 上海师范大学 | Method based on the quasi- three-dimensional micro-nano structure of AFM write-through stress-electric coupling lithography |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | RIE semiconductor material etching device with multiple detection functions |
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