CN108538701B - Resonant cavity for enhancing microwave and plasma coupling ratio and microwave plasma device - Google Patents
Resonant cavity for enhancing microwave and plasma coupling ratio and microwave plasma device Download PDFInfo
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- CN108538701B CN108538701B CN201810463874.9A CN201810463874A CN108538701B CN 108538701 B CN108538701 B CN 108538701B CN 201810463874 A CN201810463874 A CN 201810463874A CN 108538701 B CN108538701 B CN 108538701B
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- microwave
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- resonant cavity
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- electric field
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
Abstract
The embodiment of the invention provides a resonant cavity for enhancing the coupling rate of high-power microwaves and plasmas generated by the excitation of the high-power microwaves, which comprises: the plasma generator comprises a resonant cavity wall, a plasma generating device, a supporting device and a microwave electric field frequency modulation device; the plasma generating device is connected with the supporting device; the supporting device is connected with the plasma generating device; the microwave electric field frequency modulation device is wrapped outside the supporting device; and the resonant cavity wall is used for generating a strong microwave field required by exciting plasma, and wrapping the plasma generating device, the supporting device and the microwave electric field frequency modulation device. The embodiment of the invention also provides a high-efficiency microwave plasma device, which comprises: a microwave transmission device and the resonant cavity; the microwave transmission device is coupled with the resonant cavity and is used for transmitting high-power microwaves into the resonant cavity and exciting plasmas. The invention can obtain the high-power microwave electric field with the minimum reflection loss and excite to generate plasma.
Description
Technical Field
The embodiment of the invention relates to the field of energy sources, in particular to a resonant cavity for enhancing the coupling ratio of microwaves and plasmas and a microwave plasma device.
Background
The high-power microwave plasma device is a high-efficiency electrodeless lamp. The high-brightness LED lamp can generate high-brightness light with wide spectrum in infrared, visible light and ultraviolet, is used for illumination, strong irradiation and material curing treatment, has the technical advantages of no filament, no electrode, strong luminous efficiency, low energy consumption, long service life and the like, and has nearly constant luminous flux and basically no attenuated super-high brightness in the whole service life.
The high-power microwave plasma device comprises a quartz ball with the diameter of about 30mm, and argon and other filling materials are contained in the quartz ball and used for generating light with different wave bands. The bulb is arranged in a microwave resonant cavity of a metal mesh. A magnetron emits microwaves with a specific frequency, the microwaves are coupled into a microwave resonant cavity through a waveguide, an electric field is formed in the whole microwave resonant cavity, and argon in a quartz sphere is excited and ionized in the electric field. However, since the distribution of the electric field strength in the microwave cavity is not uniform, and the ionization efficiency of the quartz sphere in different electric field strengths is not the same, the position of the quartz sphere in the microwave cavity of the conventional high-power microwave plasma device is usually fixed, so that the ionization efficiency of the quartz sphere cannot be fully exerted. Therefore, it is an urgent need in the industry to provide a microwave resonant cavity capable of obtaining the maximum plasma ionization efficiency under the condition of fixing a quartz sphere, and a high-power microwave plasma device including the resonant cavity.
Disclosure of Invention
In view of the above problems in the prior art, embodiments of the present invention provide a resonant cavity and a microwave plasma device for enhancing the coupling ratio of microwave and plasma.
In one aspect, an embodiment of the present invention provides a resonant cavity for enhancing a coupling ratio of microwave and plasma, including: the plasma generator, the supporting device, the microwave electric field frequency modulation device and the resonant cavity wall; the plasma generating device is connected with the supporting device and is used for generating plasma; the supporting device is connected with the plasma generating device and used for supporting the plasma generating device; the microwave electric field frequency modulation device is wrapped outside the supporting device, and the microwave electric field frequency with the minimum reflection loss is determined by adjusting the proportion of wrapping the supporting device; the resonant cavity wall wraps the plasma generating device, the supporting device and the microwave electric field frequency modulation device and is used for forming the resonant cavity for enhancing the coupling rate of the microwave and the plasma.
In another aspect, an embodiment of the present invention provides a microwave plasma device for enhancing coupling ratio of microwave and plasma, including: a microwave transmission device and the resonant cavity for enhancing the coupling rate of the microwave and the plasma; the microwave transmission device is coupled with the resonant cavity for enhancing the coupling rate of the microwave and the plasma, and is used for transmitting the microwave to the resonant cavity for enhancing the coupling rate of the microwave and the plasma so as to ionize the plasma.
The embodiment of the invention provides a resonant cavity for enhancing the coupling rate of microwave and plasma and a microwave plasma device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a resonant cavity with enhanced microwave to plasma coupling according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a resonant cavity for enhancing microwave and plasma coupling ratio according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a microwave plasma device according to a third embodiment of the present invention;
FIG. 4 is a schematic view of a microwave plasma device according to a fourth embodiment of the present invention;
FIG. 5 is a diagram illustrating the detection result of the microwave electric field strength in the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a resonant cavity for enhancing the coupling ratio of microwaves and plasmas and a microwave plasma device. Referring to fig. 1, fig. 1 is a schematic structural diagram of a resonant cavity for enhancing microwave and plasma coupling ratio according to a first embodiment of the present invention, including:
a plasma generating device 102, a supporting device 103 (in another embodiment, a quartz column rod), a microwave electric field frequency modulation device 104 and a resonant cavity wall 101;
the plasma generating device 102 is connected with the supporting device 103 and is used for generating plasma;
the supporting device 103 is connected with the plasma generating device 102 and is used for supporting the plasma generating device 102;
the microwave electric field frequency modulation device 104 is a device capable of determining the frequency of a microwave electric field with the minimum reflection loss, is wrapped outside the supporting device 103, and determines the frequency of the microwave electric field with the minimum reflection loss by adjusting the proportion of wrapping the supporting device 103;
the resonant cavity wall 101 wraps the plasma generating device 102, the supporting device 103 and the microwave electric field frequency modulation device 104, and is used for forming the resonant cavity for enhancing the coupling rate of the microwave and the plasma.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a resonant cavity for enhancing microwave and plasma coupling ratio according to a second embodiment of the present invention, including:
a quartz sphere 202, a support rod 203, a metal sleeve 204 (in another embodiment, any metal such as gold, silver, copper, or iron), a cavity wall 201 (which may be cylindrical or other shape), and a honeycomb-shaped viewport 205;
the quartz ball 202 is connected with the support rod 203 and used for generating plasma;
the support rod 203 is connected with the quartz ball 202 and is used for supporting the quartz ball 202;
the metal sleeve 204 is wrapped outside the support rod 203, the microwave electric field frequency with the minimum reflection loss is determined by adjusting the proportion wrapping the support rod 203, and in another embodiment, the metal sleeve 204 is in the shape of a hollow cylinder and can move (namely the proportion wrapping the support rod 203 can be adjusted);
the resonant cavity wall 201 is used for wrapping the quartz ball 202, the support rod 203 and the metal sleeve 204 and forming the resonant cavity for enhancing the coupling rate of the microwave and the plasma. Wherein, the user can observe the adjusting position of the metal sleeve 204 in the resonant cavity with adjustable microwave and plasma coupling ratio through the honeycomb-shaped observation hole 205.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a microwave plasma device according to a third embodiment of the present invention, including:
a microwave transmission device 302 and a resonant cavity 301 for enhancing the microwave and plasma coupling ratio based on the first embodiment;
the microwave transmission device 302 is coupled to the resonant cavity 301 with enhanced microwave and plasma coupling ratio according to the first embodiment, and is configured to transmit microwaves into the resonant cavity 301 with enhanced microwave and plasma coupling ratio to ionize plasma. The composition principle of the resonant cavity 301 for enhancing the coupling ratio of the microwave and the plasma is described in the first embodiment, and is not described herein again.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a microwave plasma device according to a fourth embodiment of the present invention, including:
a coupling hole 402, a device wall 403, a microwave generating device 404 and a resonant cavity 401 for enhancing the microwave and plasma coupling ratio based on the second embodiment. Wherein, the coupling hole 402, the device wall 403 and the microwave generating device 404 form a microwave transmission device;
the coupling hole 402 is installed on the device wall 403 and is used for coupling the microwave transmission device with the resonant cavity 401 for enhancing the microwave and plasma coupling rate according to the second embodiment;
the microwave generating device 404, installed inside the device wall 403, is used for generating microwaves, and the microwaves are transmitted into the resonant cavity 401 for enhancing the microwave and plasma coupling ratio according to the second embodiment through the coupling hole 402;
the device wall 403 is provided with a coupling aperture 402 and encloses the microwave generating means 404 for forming the microwave transmission means. The composition principle of the resonant cavity 401 for enhancing the coupling ratio between the microwave and the plasma according to the second embodiment has already been described in the second embodiment, and is not repeated herein.
The microwave electric field intensity distribution in the resonant cavity is not uniform, and the intensity is different.
Referring to fig. 5, fig. 5 is a schematic diagram of a detection result of the microwave electric field strength in the embodiment of the present invention, including:
a microwave frequency axis 501, a microwave electric field reflection parameter axis 502, a microwave electric field frequency modulation device height curve 503, a detection result point 504, a detection result point 505 and a microwave electric field frequency modulation device height curve 506.
As can be seen from the figure, the height curve 503 of the microwave electric field frequency modulation device represents a height of 20, at which the microwave reflection of the microwave electric field with the microwave frequency of 2.44GHz can be detected to be the least (the reflection value is-35.536, i.e. the reflection loss of the microwave is the least), i.e. the information at the detection result point 504; the height represented by the plasma generating device height curve 506 is 24, at which the microwave reflection of the microwave electric field with the microwave frequency of 2.65GHz is the smallest (reflection value-32.683, i.e., reflection loss of the microwave is the smallest), i.e., the information at the detection result point 505, can be detected.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (6)
1. A resonant cavity for enhancing microwave and plasma coupling, comprising:
the plasma generator, the supporting device, the microwave electric field frequency modulation device and the resonant cavity wall;
the plasma generating device is connected with the supporting device and is used for generating plasma;
the supporting device is connected with the plasma generating device and used for supporting the plasma generating device;
the microwave electric field frequency modulation device is wrapped outside the supporting device, and the microwave electric field frequency with the minimum reflection loss is determined by adjusting the proportion of wrapping the supporting device; the microwave electric field frequency modulation device comprises: a metal sheath; the metal sleeve is in the shape of a hollow cylinder and can move;
the resonant cavity wall wraps the plasma generating device, the supporting device and the microwave electric field frequency modulation device and is used for forming the resonant cavity for enhancing the coupling rate of the microwave and the plasma.
2. A resonant cavity for enhancing microwave to plasma coupling ratio as recited in claim 1, wherein the plasma generating device comprises: and (4) a quartz ball.
3. A resonant cavity for enhancing microwave and plasma coupling ratio as recited in claim 1, wherein the support means comprises: and a support rod.
4. A resonant cavity for enhancing microwave and plasma coupling ratio according to claim 1, wherein the resonant cavity wall has a shape comprising a cylinder with a honeycomb-shaped viewing aperture.
5. A microwave plasma apparatus, comprising:
a microwave transmission device and a resonant cavity for enhancing microwave and plasma coupling ratio as claimed in any one of claims 1 to 4;
the microwave transmission device, coupled to the resonant cavity for enhancing microwave and plasma coupling ratio as claimed in any claim 1 to 4, is used for transmitting microwave to the resonant cavity for enhancing microwave and plasma coupling ratio to ionize plasma.
6. A microwave plasma device according to claim 5, wherein the microwave transmission means comprises:
a coupling hole, a device wall and a microwave generating device;
the coupling hole is arranged on the wall of the device and is used for coupling the microwave transmission device with the resonant cavity for enhancing the microwave and plasma coupling rate of any claim 1 to 4;
the microwave generating device is arranged inside the wall of the device and is used for generating microwaves, and the microwaves are transmitted into the resonant cavity for enhancing the coupling ratio of the microwaves and the plasma according to any one of claims 1 to 4 through the coupling hole;
the wall of the device is provided with a coupling hole and wraps the microwave generating device to form the microwave transmission device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810463874.9A CN108538701B (en) | 2018-05-15 | 2018-05-15 | Resonant cavity for enhancing microwave and plasma coupling ratio and microwave plasma device |
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| CN201810463874.9A CN108538701B (en) | 2018-05-15 | 2018-05-15 | Resonant cavity for enhancing microwave and plasma coupling ratio and microwave plasma device |
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| CN108538701A CN108538701A (en) | 2018-09-14 |
| CN108538701B true CN108538701B (en) | 2020-06-26 |
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| CN111173698B (en) * | 2018-11-09 | 2021-01-05 | 哈尔滨工业大学 | Liquid working medium plasma thruster based on microwave enhancement |
| CN114456820B (en) * | 2022-01-27 | 2022-11-11 | 成都皓耘浩劢科技有限责任公司 | Biomass microwave heating method and biomass structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0438179A1 (en) * | 1990-01-19 | 1991-07-24 | Mitsubishi Denki Kabushiki Kaisha | An image heating apparatus using a microwave discharge plasma lamp |
| JP2003022788A (en) * | 2001-07-09 | 2003-01-24 | Matsushita Electric Works Ltd | Electrodeless discharge lamp lighting device |
| CN1317734C (en) * | 2003-09-03 | 2007-05-23 | Lg电子株式会社 | Electrodeless lighting system |
| CN101093784A (en) * | 2006-06-20 | 2007-12-26 | 乐金电子(天津)电器有限公司 | Body of sulfur lamp with tuner |
| CN103779176A (en) * | 2014-01-21 | 2014-05-07 | 电子科技大学 | Microwave sulphur lamp and manufacture method thereof |
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2018
- 2018-05-15 CN CN201810463874.9A patent/CN108538701B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0438179A1 (en) * | 1990-01-19 | 1991-07-24 | Mitsubishi Denki Kabushiki Kaisha | An image heating apparatus using a microwave discharge plasma lamp |
| JP2003022788A (en) * | 2001-07-09 | 2003-01-24 | Matsushita Electric Works Ltd | Electrodeless discharge lamp lighting device |
| CN1317734C (en) * | 2003-09-03 | 2007-05-23 | Lg电子株式会社 | Electrodeless lighting system |
| CN101093784A (en) * | 2006-06-20 | 2007-12-26 | 乐金电子(天津)电器有限公司 | Body of sulfur lamp with tuner |
| CN103779176A (en) * | 2014-01-21 | 2014-05-07 | 电子科技大学 | Microwave sulphur lamp and manufacture method thereof |
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| CN108538701A (en) | 2018-09-14 |
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