CN108531982A - A kind of cover board for polysilicon ingot crucible - Google Patents
A kind of cover board for polysilicon ingot crucible Download PDFInfo
- Publication number
- CN108531982A CN108531982A CN201810494016.0A CN201810494016A CN108531982A CN 108531982 A CN108531982 A CN 108531982A CN 201810494016 A CN201810494016 A CN 201810494016A CN 108531982 A CN108531982 A CN 108531982A
- Authority
- CN
- China
- Prior art keywords
- cover board
- hole
- blast fence
- board body
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 239000000725 suspension Substances 0.000 claims description 9
- 150000001722 carbon compounds Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000005266 casting Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000000630 rising effect Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention proposes a kind of cover board for polysilicon ingot crucible, including cover board body, air admission hole is offered in cover board body, blast fence is installed with below cover board body, the position of the blast fence is corresponding with air inlet hole site, and there are the gaps being discharged for air-flow between cover board body and blast fence.The cover board for being used for polysilicon ingot crucible opens up hanging hole around air admission hole, then screw rod is hung by carbon/carbon and hangs blast fence below, and open up thermometer hole at blast fence center, the air-flow that air inlet pipe comes out directly is blown on blast fence, and disperse around, due to the rising of air-flow rebound surface, it is beneficial to reduce the generation of vortex, so that the impurity on polycrystalline silicon ingot casting surface is reduced, be conducive to Improving The Quality of Products.
Description
Technical field
The present invention relates to production of polysilicon equipment more particularly to a kind of cover boards for polysilicon ingot crucible.
Background technology
Diamond wire cuts polycrystalline as explosive growth has occurred in the solution of making herbs into wool problem, diamond wire cut polycrystalline be faced with it is many
Challenge, wherein it is most important challenge be exactly impurity content.Compared to monocrystalline silicon, the casting higher carbon nitrogen impurity of polycrystal silicon ingot is being cut
The bad generation such as tangent line trace and TTV, steel wire abrasion, broken string can be caused during cutting, it is inefficient and electric leakage to be reacted to battery-end then
Equal electrical properties are bad.Impurity content will be as the biggest obstacle of Buddha's warrior attendant wire cutting graph thinning process.Common polycrystalline silicon ingot casting earthenware
The argon gas that crucible comes out from air inlet pipe in process of production is directly blown on silicon ingot surface, then tapping stream of the air-flow from crucible guard boards
Go out, is easy to form vortex in regions such as the corners of crucible in this way, the region impurity is made to be not easy to be discharged.Therefore, it is necessary to this
Polysilicon ingot crucible carries out structure optimization, to overcome drawbacks described above.
Invention content
The object of the present invention is to provide a kind of cover boards for polysilicon ingot crucible, to improve the air-flow stream at the top of silicon ingot
To preferably impurity is discharged.
The present invention is technical solution used by solving its technical problem:
A kind of cover board for polysilicon ingot crucible, including cover board body offer air admission hole, cover board in cover board body
Blast fence is installed with below ontology, the position of the blast fence is corresponding with air inlet hole site, cover board body and blast fence it
Between there are the gaps being discharged for air-flow.
In one embodiment of the invention, air admission hole and blast fence are circle, the central axes of air admission hole and air-flow
The central axes of baffle overlap, and the diameter of blast fence is more than the diameter of air admission hole.
Further, thermometer hole is offered in blast fence, the central axes of thermometer hole are overlapped with the central axes of air admission hole, and
The diameter of thermometer hole is less than the diameter of air admission hole.
In one embodiment of the invention, one group of hanging hole is offered in cover board body, each hanging hole surrounds air admission hole sequentially
Arrangement, blast fence edge have one group of hook hole, and each hole that hooks sequentially is arranged around thermometer hole, and hook hole is corresponding with hanging hole position,
One group of suspension screw rod is equipped between cover board body and blast fence, suspension screw tip is stretched into hanging hole, is connect with cover board body,
Its bottom end, which is stretched into, to be hooked in hole, is connect with blast fence, blast fence is made to hang below cover board body;Hang screw rod using carbon/
Carbon composite makes.
The advantage of the invention is that:
The cover board for being used for polysilicon ingot crucible opens up hanging hole around air admission hole, then passes through carbon/carbon and hangs screw rod
Suspension blast fence below, and thermometer hole is opened up at blast fence center, the air-flow that air inlet pipe comes out directly is blown to be kept off in air-flow
On plate, and disperse around, due to the rising of air-flow rebound surface, is beneficial to reduce the generation of vortex so that polycrystalline silicon ingot casting
The impurity on surface is reduced, and is conducive to Improving The Quality of Products.
Description of the drawings
Fig. 1 is the structural schematic diagram of the cover board proposed by the present invention for polysilicon ingot crucible;
Fig. 2 is the side view of the cover board;
Fig. 3 is the vertical view of the cover board.
Specific implementation mode
In order to make the technical means, the creative features, the aims and the efficiencies achieved by the present invention be easy to understand, tie below
Diagram and specific embodiment are closed, the present invention is further explained.
As shown in Figure 1, Figure 2, Figure 3 shows, the cover board proposed by the present invention for polysilicon ingot crucible includes cover board body 1,
Air admission hole 2 is offered in cover board body, and blast fence 3, the position of the blast fence and air admission hole are installed with below cover board body
Position corresponds to, and there are the gaps being discharged for air-flow between cover board body and blast fence.In the present embodiment, air admission hole and air-flow
Baffle is circle, and the central axes of air admission hole are overlapped with the central axes of blast fence, and the diameter of blast fence is more than air admission hole
Diameter.Further, thermometer hole 4 is offered in blast fence, the central axes of thermometer hole are overlapped with the central axes of air admission hole, and are surveyed
The diameter in warm hole is less than the diameter of air admission hole.In the present embodiment, one group of hanging hole 5 is offered in cover board body, each hanging hole surrounds
Air admission hole is sequentially arranged, and blast fence edge has one group of hook hole 6, and each hole that hooks sequentially is arranged around thermometer hole, is hooked hole and is hung
Hole site corresponds to, and one group of suspension screw rod 7 is equipped between cover board body and blast fence, and suspension screw tip stretches into hanging hole, with
Cover board body connects, and bottom end, which is stretched into, to be hooked in hole, is connect with blast fence, blast fence is made to hang below cover board body;This
In embodiment, suspension screw rod is made of carbon/carbon compound material;The diameter of blast fence about 220mm, cover board body are kept off with air-flow
The distance between plate about 36mm.This opens up hanging hole for cover board of polysilicon ingot crucible around air admission hole, then by carbon/
Carbon suspension screw rod hangs blast fence below, and opens up thermometer hole at blast fence center, and the air-flow that air inlet pipe comes out is direct
It blows on blast fence, and disperses around, due to the rising of air-flow rebound surface, be beneficial to reduce the generation of vortex so that
The impurity on polycrystalline silicon ingot casting surface is reduced, and is conducive to Improving The Quality of Products.
Embodiment of above only technical concepts and features to illustrate the invention, its object is to allow those skilled in the art
Member understands present disclosure and is implemented, and it is not intended to limit the scope of the present invention, all according to spirit of that invention
The equivalent change or modification that essence is done should all cover within the scope of the present invention.
Claims (5)
1. a kind of cover board for polysilicon ingot crucible, it is characterised in that:
Including cover board body, air admission hole is offered in cover board body, is installed with blast fence below cover board body, the blast fence
Position it is corresponding with air inlet hole site, there are the gaps being discharged for air-flow between cover board body and blast fence.
2. a kind of cover board for polysilicon ingot crucible according to claim 1, it is characterised in that:
Air admission hole and blast fence are circle, and the central axes of air admission hole are overlapped with the central axes of blast fence, blast fence
Diameter is more than the diameter of air admission hole.
3. a kind of cover board for polysilicon ingot crucible according to claim 2, it is characterised in that:
Thermometer hole is offered in blast fence, the central axes of thermometer hole are overlapped with the central axes of air admission hole, and thermometer hole is straight
Diameter is less than the diameter of air admission hole.
4. a kind of cover board for polysilicon ingot crucible according to claim 1, it is characterised in that:
One group of hanging hole is offered in cover board body, each hanging hole is sequentially arranged around air admission hole, and blast fence edge has one group
Hole is hooked, each hole that hooks sequentially is arranged around thermometer hole, and hook hole is corresponding with hanging hole position, and one is equipped between cover board body and blast fence
Group suspension screw rod, suspension screw tip are stretched into hanging hole, are connect with cover board body, and bottom end, which is stretched into, to be hooked in hole, with blast fence
Connection makes blast fence hang below cover board body.
5. a kind of cover board for polysilicon ingot crucible according to claim 4, it is characterised in that:
Screw rod is hung to be made of carbon/carbon compound material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810494016.0A CN108531982A (en) | 2018-05-22 | 2018-05-22 | A kind of cover board for polysilicon ingot crucible |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810494016.0A CN108531982A (en) | 2018-05-22 | 2018-05-22 | A kind of cover board for polysilicon ingot crucible |
Publications (1)
Publication Number | Publication Date |
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CN108531982A true CN108531982A (en) | 2018-09-14 |
Family
ID=63472489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810494016.0A Pending CN108531982A (en) | 2018-05-22 | 2018-05-22 | A kind of cover board for polysilicon ingot crucible |
Country Status (1)
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CN (1) | CN108531982A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109321972A (en) * | 2018-12-14 | 2019-02-12 | 扬州荣德新能源科技有限公司 | A kind of polycrystalline furnace contains gas guiding device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507979A (en) * | 2002-12-18 | 2004-06-30 | 鲍勃斯脱股份有限公司 | Fitting parts for flat tools |
DE102006017622A1 (en) * | 2006-04-12 | 2007-10-18 | Schott Ag | Manufacturing multi-crystalline silicon comprises placing detachable upper section at an upper edge of crucible furnace to build container structure, filling the container structure with silicon filling, and heating the container structure |
CN202558958U (en) * | 2012-05-16 | 2012-11-28 | 天威新能源控股有限公司 | Novel gas diversion control device |
CN207877927U (en) * | 2018-04-28 | 2018-09-18 | 嘉兴启晟碳材料有限公司 | A kind of polycrystalline silicon ingot casting stove cover plate |
-
2018
- 2018-05-22 CN CN201810494016.0A patent/CN108531982A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507979A (en) * | 2002-12-18 | 2004-06-30 | 鲍勃斯脱股份有限公司 | Fitting parts for flat tools |
DE102006017622A1 (en) * | 2006-04-12 | 2007-10-18 | Schott Ag | Manufacturing multi-crystalline silicon comprises placing detachable upper section at an upper edge of crucible furnace to build container structure, filling the container structure with silicon filling, and heating the container structure |
CN202558958U (en) * | 2012-05-16 | 2012-11-28 | 天威新能源控股有限公司 | Novel gas diversion control device |
CN207877927U (en) * | 2018-04-28 | 2018-09-18 | 嘉兴启晟碳材料有限公司 | A kind of polycrystalline silicon ingot casting stove cover plate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109321972A (en) * | 2018-12-14 | 2019-02-12 | 扬州荣德新能源科技有限公司 | A kind of polycrystalline furnace contains gas guiding device |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200527 Address after: 314100 floor 2, workshop 2, No. 11, Songhai Road, Huimin street, Jiashan County, Jiaxing City, Zhejiang Province Applicant after: Zhejiang Xinghui New Material Technology Co.,Ltd. Address before: Jiashan Jinyang road Jiaxing city Zhejiang province 314100 No. 568 building 4 room 4308 Applicant before: JIAXIN NAIJIN NEW MATERIAL Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180914 |
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RJ01 | Rejection of invention patent application after publication |