CN108521271A - Improve the devices and methods therefor of the P1db output powers of GaN power amplifiers - Google Patents
Improve the devices and methods therefor of the P1db output powers of GaN power amplifiers Download PDFInfo
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- CN108521271A CN108521271A CN201810230515.9A CN201810230515A CN108521271A CN 108521271 A CN108521271 A CN 108521271A CN 201810230515 A CN201810230515 A CN 201810230515A CN 108521271 A CN108521271 A CN 108521271A
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- power
- attenuator
- controllable
- p1db
- output
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- 238000000034 method Methods 0.000 title claims description 11
- 238000005070 sampling Methods 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims 2
- 102000030592 phosphoserine aminotransferase Human genes 0.000 description 4
- 108010088694 phosphoserine aminotransferase Proteins 0.000 description 4
- 102000017795 Perilipin-1 Human genes 0.000 description 3
- 108010067162 Perilipin-1 Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of devices for the P1db output powers improving GaN power amplifiers, including power analyzer, controllable attenuator, the first power detecting instrument, the second power detecting instrument and an attenuator controller；The input terminal of power analyzer is connected with radio frequency input, the output end of power analyzer and the input terminal of controllable attenuator connect, the output end of controllable attenuator is connected with radio frequency output, the sampling end of power analyzer is connect with the test side of the first power detecting instrument, the output end of first power detecting instrument and the first input end of attenuator controller connect, the test side of controllable attenuator is connect with the collection terminal of the second rate detector, the output end of second power detecting instrument and the second input terminal of attenuator controller connect, the control terminal of attenuator controller and the controlled end of controllable attenuator connect.By detecting and feeding back, control controllable attenuator realizes the signal compensation to GaN power amplifiers.
Description
Technical field
The present invention relates to satellite communication, microwave, radio frequency arts, more particularly to a kind of P1db improving GaN power amplifiers is defeated
Go out the devices and methods therefor of power.
Background technology
There are GaN device broadband, high saturated electrons mobility and good temperature-resistance characteristic, these characteristics to make GaN work(
Rate pipe has apparent advantage in the microwave radios power amplifier field such as high power, high temperature, high frequency, high efficiency.But GaN work(
The linearity of rate pipe output power will apparent far short of what is expected, the P1dB output works of GaN power tubes relative to traditional GaAs power tubes
Rate wants low 3~6dB, this characteristic of GaN power tubes to significantly impact it and set in power amplifier relative to its saturation output power PSAT
The standby middle convenience used.
Invention content
The technical problem to be solved by the present invention is to how provide a kind of P1dB output power back offs of GaN power amplifiers to its saturation
The compensation method of output power PSAT and device.
In order to solve the above-mentioned technical problem, the technical scheme is that：
A kind of device for the P1db output powers improving GaN power amplifiers, including power analyzer, controllable attenuator, the first work(
Rate detector, the second power detecting instrument and an attenuator controller；The input terminal of the power analyzer connects with radio frequency input
It connects, the output end of the power analyzer is connect with the input terminal of the controllable attenuator, the output end of the controllable attenuator
It exporting and connects with radio frequency, the sampling end of the power analyzer connect with the test side of first power detecting instrument, and described the
The output end of one power detecting instrument is connect with the first input end of the attenuator controller, the test side of the controllable attenuator
It is connect with the collection terminal of the second rate detector, output end and the attenuator controller of second power detecting instrument
Second input terminal connects, and the control terminal of the attenuator controller is connect with the controlled end of the controllable attenuator.
Preferably：Inband flatness under multiple frequencies of the power detecting instrument detection power.
Preferably：The controllable attenuator is active controllable attenuator.
Technical solution of the present invention also proposed a kind of method for the P1db output powers improving GaN power amplifiers, including step：
The radio frequency of detection, analysis input, and it is sent to attenuator controller；
Attenuator controller controls controllable attenuator and exports supplementary signal；
The output signal of the controllable attenuator is detected, and is sent to attenuator controller；
The attenuator controller controls the controllable attenuator and exports supplementary signal.
Preferably：Inband flatness under multiple frequencies of the power detecting instrument detection power.
Preferably：It is active controllable attenuator to state controllable attenuator.
Using above-mentioned technical proposal, by including power analyzer, controllable attenuator, the first power detecting instrument, the second power
Detector and an attenuator controller form a kind of device for the P1db output powers improving GaN power amplifiers.Pass through power analysis
Instrument and power detecting instrument test and analyze the P1dB output powers of its input, output end, and are sent to attenuator controller, pass through
Control controllable attenuator sends out thermal compensation signal after attenuator controller calculates, and then P1db is supplemented to big gun and power.This technology
Scheme solves the problems, such as the gain of GaN power amplifiers and power linear range using software reduction hardware circuit, without changing power tube
Working condition, thus the advantage of GaN device can be given full play to, be obviously improved the P1dB output powers of GaN power amplifiers to its saturation
Output power PSAT.
Description of the drawings
Fig. 1 is the schematic diagram of one embodiment of device for the P1db output powers that the present invention improves GaN power amplifiers；
Fig. 2 is the flow diagram of the method for the P1db output powers that the present invention improves GaN power amplifiers.
In figure, 100- power analyzers, 200- controllable attenuators, the second power detecting instruments of 300-, the inspection of the first power of 400-
Instrument, 500- attenuator controllers are surveyed, 600- radio frequencies project, the input of 700- radio frequencies.
Specific implementation mode
The specific implementation mode of the present invention is described further below in conjunction with the accompanying drawings.It should be noted that for
The explanation of these embodiments is used to help understand the present invention, but does not constitute limitation of the invention.In addition, disclosed below
The each embodiment of the present invention in involved technical characteristic can be combined with each other as long as they do not conflict with each other.
Technical solution of the present invention proposes a kind of device for the P1db output powers improving GaN power amplifiers, including power analysis
Instrument 100, controllable attenuator 200, the first power detecting instrument 400, the second power detecting instrument 300 and an attenuator controller 500；
The input terminal of power analyzer 100 is connect with radio frequency input 700, output end and the controllable attenuator 200 of power analyzer 100
Input terminal connects, and output end and the radio frequency output of controllable attenuator 200 connect, the sampling end of power analyzer 100 and the first work(
The test side of rate detector 400 connects, the output end of the first power detecting instrument 400 and the first input of attenuator controller 500
End connection, the test side of controllable attenuator 200 connect with the collection terminal of the second rate detector, the second power detecting instrument 300 it is defeated
Outlet is connect with the second input terminal of attenuator controller 500, control terminal and the controllable attenuator 200 of attenuator controller 500
Controlled end connection.
It should be noted that present apparatus input, output detection and software control to form feedback closed loop；Input, output detection
Bandwidth of operation is directly affected in the flatness of different frequency point；Input, output detection are direct to the sensitivity of Detection of Weak Signals
Determine the dynamic range of input-output power.
Specifically：Power detecting instrument detects the inband flatness under multiple frequencies of power.Controllable attenuator 200 is active
Controllable attenuator 200.
Using above-mentioned technical proposal, by include power analyzer 100, controllable attenuator 200, the first power detecting instrument 400,
Second power detecting instrument 300 and an attenuator controller 500 form a kind of dress for the P1db output powers improving GaN power amplifiers
It sets.The P1dB output powers of its input, output end are tested and analyzed by power analyzer 100 and power detecting instrument, and are sent
To attenuator controller 500, control controllable attenuator 200 sends out thermal compensation signal after being calculated by attenuator controller 500, in turn
P1db is supplemented to big gun and power.The technical program solves the gain of GaN power amplifiers and power line using software reduction hardware circuit
The problem of property range, without changing the working condition of power tube, thus can give full play to the advantage of GaN device, be obviously improved GaN
The P1dB output powers of power amplifier are to its saturation output power PSAT.
Technical solution of the present invention also proposed a kind of method for the P1db output powers improving GaN power amplifiers, including step：
The radio frequency of detection, analysis input, and it is sent to attenuator controller 500；
Attenuator controller 500 controls controllable attenuator 200 and exports supplementary signal；
The output signal of controllable attenuator 200 is detected, and is sent to attenuator controller 500；
Attenuator controller 500 controls controllable attenuator 200 and exports supplementary signal.
In the present embodiment：Power detecting instrument detects the inband flatness under multiple frequencies of power.State controllable attenuator 200
For active controllable attenuator 200.
Right gives a kind of implementation method of new raising GaN power amplifier P1dB output powers：It is on hardware circuit first
Have input power detection, output power detection and controllable attenuator 200.Followed by software is by calculating input power Pin
In addition current setting gain G obtains theoretic linear power Plin (Plin=Pin+G), finally voluntarily being adjusted by software can
Attenuator 200 is controlled to adjust power amplifier actual gain so that real output Po is equal to theoretical linear value Plin.
Embodiments of the present invention are explained in detail above in association with attached drawing, but the present invention is not limited to described implementations
Mode.For a person skilled in the art, in the case where not departing from the principle of the invention and spirit, to these embodiments
A variety of change, modification, replacement and modification are carried out, are still fallen in protection scope of the present invention.
Claims (6)
1. a kind of device for the P1db output powers improving GaN power amplifiers, it is characterised in that：Including power analyzer, controllable attenuation
Device, the first power detecting instrument, the second power detecting instrument and an attenuator controller；The input terminal of the power analyzer with penetrate
Frequency input connection, the output end of the power analyzer are connect with the input terminal of the controllable attenuator, the controllable attenuator
The output of output end and radio frequency connect, the sampling end of the power analyzer and the test side of first power detecting instrument connect
It connects, the output end of first power detecting instrument is connect with the first input end of the attenuator controller, the controllable attenuation
The test side of device is connect with the collection terminal of the second rate detector, output end and the decaying of second power detecting instrument
Second input terminal of device controller connects, and the control terminal of the attenuator controller and the controlled end of the controllable attenuator connect
It connects.
2. the device of the P1db output powers according to claim 1 for improving GaN power amplifiers, it is characterised in that：The power
Detector detects the inband flatness under multiple frequencies of power.
3. the device of the P1db output powers of high GaN power amplifiers according to claim 2, it is characterised in that：It is described controllably to decline
It is active controllable attenuator to subtract device.
4. a kind of method for the P1db output powers improving GaN power amplifiers, it is characterised in that：Including step：
The radio frequency of detection, analysis input, and it is sent to attenuator controller；
Attenuator controller controls controllable attenuator and exports supplementary signal；
The output signal of the controllable attenuator is detected, and is sent to attenuator controller；
The attenuator controller controls the controllable attenuator and exports supplementary signal.
5. a kind of method for the P1db output powers improving GaN power amplifiers, it is characterised in that：The power detecting instrument detection power
Inband flatness under multiple frequencies.
6. a kind of method for the P1db output powers improving GaN power amplifiers, it is characterised in that：Controllable attenuator is stated to decline for active controllable
Subtract device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810230515.9A CN108521271A (en) | 2018-03-20 | 2018-03-20 | Improve the devices and methods therefor of the P1db output powers of GaN power amplifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810230515.9A CN108521271A (en) | 2018-03-20 | 2018-03-20 | Improve the devices and methods therefor of the P1db output powers of GaN power amplifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108521271A true CN108521271A (en) | 2018-09-11 |
Family
ID=63434036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810230515.9A Withdrawn CN108521271A (en) | 2018-03-20 | 2018-03-20 | Improve the devices and methods therefor of the P1db output powers of GaN power amplifiers |
Country Status (1)
| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109743029A (en) * | 2018-12-19 | 2019-05-10 | 安徽华东光电技术研究所有限公司 | Predistortion circuit based on gallium nitride power booster output nonlinear gain |
-
2018
- 2018-03-20 CN CN201810230515.9A patent/CN108521271A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109743029A (en) * | 2018-12-19 | 2019-05-10 | 安徽华东光电技术研究所有限公司 | Predistortion circuit based on gallium nitride power booster output nonlinear gain |
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Application publication date: 20180911 |
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