CN108515000A - The preparation method of based superhydrophobic thin films - Google Patents
The preparation method of based superhydrophobic thin films Download PDFInfo
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- CN108515000A CN108515000A CN201810251453.XA CN201810251453A CN108515000A CN 108515000 A CN108515000 A CN 108515000A CN 201810251453 A CN201810251453 A CN 201810251453A CN 108515000 A CN108515000 A CN 108515000A
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- 230000003075 superhydrophobic effect Effects 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000002086 nanomaterial Substances 0.000 claims abstract description 112
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 55
- 229920005591 polysilicon Polymers 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 238000005224 laser annealing Methods 0.000 claims description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- NYTYVZFFEIBDBZ-UHFFFAOYSA-N CO[SiH](OC)OC.[Ru].[F] Chemical class CO[SiH](OC)OC.[Ru].[F] NYTYVZFFEIBDBZ-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- -1 perfluoroalkyl chlorosilane Chemical compound 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Silicon Compounds (AREA)
Abstract
The embodiment of the present invention provides a kind of preparation method of based superhydrophobic thin films, including：Polysilicon micro-nano structure array layer is formed on substrate；Inorganic matter micro-nano structure array layer is formed on the polysilicon micro-nano structure array layer；Surface-hydrophobicized processing is carried out to the inorganic matter micro-nano structure array layer, based superhydrophobic thin films are made.By means of the invention it is possible to solve the problems, such as existing sol-gal process prepare more based superhydrophobic thin films preparation process, long preparation period and can not large area production.
Description
Technical field
The present embodiments relate to super-hydrophobic product scope more particularly to a kind of preparation methods of based superhydrophobic thin films.
Background technology
Super-drainage structure has wide practical use in the fields such as anticorrosive, antifog, water-oil separating, and transparent and super-hydrophobic
Application potential of the structure on the products such as camera lens protection, windshield, rearview mirror be allowed to the weight increasingly by people
Depending on.
Currently, based superhydrophobic thin films are mainly made by sol-gal process, but sol-gal process preparation process is more, manufacturing cycle
It is long, and can not large area production, thus need to provide a kind of preparation method of new based superhydrophobic thin films.
Invention content
The embodiment of the present invention provides a kind of preparation method of based superhydrophobic thin films, and it is super can to solve existing sol-gal process preparation
Hydrophobic film preparation process is more, long preparation period and can not large area production the problem of.
In order to achieve the above object, the present invention provides a kind of preparation method of based superhydrophobic thin films, including：
Polysilicon micro-nano structure array layer is formed on substrate；
Inorganic matter micro-nano structure array layer is formed on the polysilicon micro-nano structure array layer；
Surface-hydrophobicized processing is carried out to the inorganic matter micro-nano structure array layer, based superhydrophobic thin films are made.
Optionally, polysilicon micro-nano structure array layer is formed on substrate, including：
The amorphous silicon layer of first thickness is deposited over the substrate；
Convert the amorphous silicon layer to the polysilicon micro-nano structure array layer.
Optionally, the first thickness is 50nm to 80nm.
Optionally, the amorphous silicon layer is converted to the polysilicon micro-nano structure array layer, including：
Quasi-molecule laser annealing is carried out to the amorphous silicon layer, forms the polysilicon micro-nano structure array layer.
Optionally, several inorganic matter micro-nano structures that the inorganic matter micro-nano structure array layer includes respectively with it is described
Several polysilicon micro-nano structures alignment that polysilicon micro-nano structure array layer includes.
Optionally, surface-hydrophobicized processing is carried out to the inorganic matter micro-nano structure array layer, based superhydrophobic thin films is made, wrapped
It includes：
The substrate of the polysilicon micro-nano structure array layer and the inorganic matter micro-nano structure array layer will be formed with
It is positioned in the closed container for being equipped with hydrophobization solution；
It after heating the closed container preset duration with preset temperature, dries, is made described after the substrate is taken out
Based superhydrophobic thin films.
Optionally, the hydrophobization solution is dissolved in isopropyl acetone by 17 fluorine ruthenium trimethoxysilanes and being formed.
Optionally, the polysilicon micro-nano structure array layer includes several polysilicon micro-nano structures, and adjacent polysilicon is micro-
Gap between micro-nano structure is 0.3um to 0.5um, and the height of the polysilicon micro-nano structure is 40nm to 50nm；It is described inorganic
Object micro-nano structure array layer includes several inorganic matter micro-nano structures, and the gap between adjacent inorganic matter micro-nano structure is 0.3um
To 0.5um, the height of the inorganic matter micro-nano structure is 40nm to 50nm.
Optionally, inorganic matter micro-nano structure array layer is formed on the polysilicon micro-nano structure array layer, including：
The inorganic matter micro-nano structure array layer of second thickness is deposited on the polysilicon micro-nano structure array layer；Its
In, the second thickness is 120nm to 150nm.
Optionally, the inorganic matter micro-nano structure array layer is silica micro-nano structure array layer.
The preparation method of based superhydrophobic thin films provided in an embodiment of the present invention forms polysilicon micro-nano structure array on substrate
After layer, inorganic matter micro-nano structure array layer is formed on polysilicon micro-nano structure array layer, later, to inorganic matter micro-nano structure
Array layer carries out surface-hydrophobicized processing, provide a kind of period it is short, can large area production based superhydrophobic thin films preparation side
Method is conducive to the commercial applications of based superhydrophobic thin films.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Some bright embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the preparation method for the based superhydrophobic thin films that one embodiment of the invention provides；
Fig. 2 to Fig. 3 is the preparation process schematic diagram for the based superhydrophobic thin films that one embodiment of the invention provides；
Fig. 4 is the floor map for the inorganic matter micro-nano structure array layer that one embodiment of the invention provides.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Fig. 1 is the preparation method for the based superhydrophobic thin films that one embodiment of the invention provides；Fig. 2 to Fig. 3 is that the present invention one is implemented
The preparation process schematic diagram for the based superhydrophobic thin films that example provides；Fig. 4 is the inorganic matter micro-nano structure battle array that one embodiment of the invention provides
The floor map of row layer.The preparation method of based superhydrophobic thin films shown in FIG. 1 is illustrated below in conjunction with Fig. 2 to Fig. 4.Such as figure
Shown in 1, based superhydrophobic thin films may comprise steps of：
S101, polysilicon micro-nano structure array layer 11 is formed on substrate 10, as shown in Figure 2.
S102, inorganic matter micro-nano structure array layer 12 is formed on polysilicon micro-nano structure array layer 11, such as Fig. 3, Fig. 4 institute
Show.
S103, surface-hydrophobicized processing is carried out to inorganic matter micro-nano structure array layer 12, based superhydrophobic thin films is made.
The preparation method of based superhydrophobic thin films provided in an embodiment of the present invention forms polysilicon micro-nano structure array on substrate
After layer, inorganic matter micro-nano structure array layer is formed on polysilicon micro-nano structure array layer, later, to inorganic matter micro-nano structure
Array layer carries out surface-hydrophobicized processing, provide a kind of period it is short, can large area production based superhydrophobic thin films preparation side
Method is conducive to the commercial applications of based superhydrophobic thin films.
In one embodiment of the present invention, above-mentioned S101 may include：
The amorphous silicon layer (a-Si) of first thickness is deposited on substrate 10；
Convert amorphous silicon layer to polysilicon (p-Si) micro-nano structure array layer.
Wherein, first thickness can be 50nm (nanometer) to 80nm.
Specifically, can by amorphous silicon layer carry out quasi-molecule laser annealing (excimer laser annealing,
ELA polysilicon micro-nano structure array layer 11) is formed.Certainly, the invention is not limited thereto, in another embodiment of the present invention,
Can also amorphous silicon layer be converted by polysilicon micro-nano structure array layer 11 using other manner.
In one embodiment of the present invention, surface-hydrophobicized processing is carried out to inorganic matter micro-nano structure array layer 12, made
The step of at based superhydrophobic thin films, may include：
The substrate 10 for being formed with polysilicon micro-nano structure array layer 11 and inorganic matter micro-nano structure array layer 12 is positioned over
It is equipped in the closed container of hydrophobization solution；
After heating the closed container preset duration with preset temperature, dries, be made super-hydrophobic after substrate 10 is taken out
Film.
In one embodiment of the present invention, above-mentioned hydrophobization solution can be dissolved in shape in alcohols solvent by fluorine containing silane
At, wherein fluorine containing silane can also be 17 fluorine ruthenium trimethoxysilanes, perfluoroalkyl chlorosilane, perfluoroalkyl alkoxy
At least one of silane, alcohols solvent can be by one or more formation in ethyl alcohol, propyl alcohol, butanol etc..
In another embodiment of the present invention, above-mentioned hydrophobization solution can be dissolved in isopropyl ketone solvent by fluorine containing silane
It is formed, wherein fluorine containing silane can also be 17 fluorine ruthenium trimethoxysilanes, perfluoroalkyl chlorosilane, perfluoroalkyl alcoxyl
At least one of base silane.
It is formed preferably, above-mentioned hydrophobization solution is dissolved in by 17 fluorine ruthenium trimethoxysilanes in isopropyl acetone.
Specifically, preset temperature can be 80 DEG C (degree Celsius) to 90 DEG C, preferably, preset temperature be 85 DEG C.Specifically,
Preset duration can be with substantially 3 hours, for example, 55 minutes 2 hours, preferably, preset duration is 3 hours.
Preferably, inorganic matter micro-nano structure array layer 12 include several inorganic matter micro-nano structures 121 respectively with it is more
Several polysilicon micro-nano structures 111 alignment that crystal silicon micro-nano structure array layer 11 includes, illustratively, as shown in figure 3, inorganic
Object micro-nano structure 121 is aligned with polysilicon micro-nano structure 111 respectively.
In one embodiment of the present invention, as shown in Fig. 2, polysilicon micro-nano structure array layer 11 includes several polycrystalline
Silicon micro-nano structure 111, the clearance D 1 between adjacent polysilicon micro-nano structure 111 are 0.3um to 0.5um, polysilicon micro-nano structure
111 height H1 is 40nm to 50nm.
Specifically, several polysilicon micro-nano structures in polysilicon micro-nano structure array layer 11 are uniformly distributed.Certainly, exist
In another embodiment of the present invention, several polysilicon micro-nano structures random can also be arranged or be arranged with other rules
Cloth.
In one embodiment of the present invention, as shown in Figure 3, Figure 4, inorganic matter micro-nano structure array layer 12 includes several
Inorganic matter micro-nano structure 121, the clearance D 2 between adjacent inorganic matter micro-nano structure 121 are 0.3um to 0.5um, inorganic matter micro-nano
The height H2 of structure 121 is 40nm to 50nm.
Specifically, several inorganic matter micro-nano structures in inorganic matter micro-nano structure array layer 12 are uniformly distributed.Certainly, exist
In another embodiment of the present invention, several inorganic matter micro-nano structures random can also be arranged or be arranged with other rules
Cloth.
It should be noted that inorganic matter micro-nano structure array layer 12 can also be by oxide commonly used in the art, nitride
With one or more formation in carbide, it is preferred that inorganic matter micro-nano structure array layer 12 can be by zinc oxide, titanium dioxide
One or more formation in titanium, zirconium oxide, aluminium oxide, silica, boron nitride, aluminium nitride.Preferably, inorganic matter micro-nano knot
Structure array layer 12 can be silica micro-nano structure array layer.
In one embodiment of the present invention, above-mentioned S102 may include：It sinks on polysilicon micro-nano structure array layer 11
The inorganic matter micro-nano structure array layer 12 of product second thickness.Preferably, second thickness is 120nm to 150nm.Specifically, above-mentioned
S102 may include：The silica micro-nano structure array layer of second thickness is deposited on polysilicon micro-nano structure array layer 11.
It will be appreciated by persons skilled in the art that in practical applications, other achievable modes can also be used micro- in polysilicon
The inorganic matter micro-nano structure array layer 12 of second thickness is formed on micro-nano structure array layer 11.
In the specific implementation, chemical vapor deposition (Chemical Vapor Deposition, CVD) method may be used,
The inorganic matter micro-nano structure array layer 12 of second thickness is deposited on polysilicon micro-nano structure array layer 11.
It should be noted that so-called " micro-nano ", refers to the scale of micron, sub-micron or nanometer.
It is formed it should be noted that substrate 10 may include any appropriate material, such as the semi-conducting materials such as silicon, glass
The organic materials such as other inorganic material such as glass, quartz or organic glass, makrolon.
Specifically, above-mentioned micro-nano structure can be micro-nano column or micro-nano particle.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of preparation method of based superhydrophobic thin films, which is characterized in that including：
Polysilicon micro-nano structure array layer is formed on substrate；
Inorganic matter micro-nano structure array layer is formed on the polysilicon micro-nano structure array layer；
Surface-hydrophobicized processing is carried out to the inorganic matter micro-nano structure array layer, based superhydrophobic thin films are made.
2. preparation method according to claim 1, which is characterized in that form polysilicon micro-nano structure array on substrate
Layer, including：
The amorphous silicon layer of first thickness is deposited over the substrate；
Convert the amorphous silicon layer to the polysilicon micro-nano structure array layer.
3. preparation method according to claim 2, which is characterized in that the first thickness is 50nm to 80nm.
4. preparation method according to claim 2, which is characterized in that it is micro- to convert the amorphous silicon layer to the polysilicon
Micro-nano structure array layer, including：
Quasi-molecule laser annealing is carried out to the amorphous silicon layer, forms the polysilicon micro-nano structure array layer.
5. preparation method according to claim 1, which is characterized in that the inorganic matter micro-nano structure array layer includes
Several polysilicon micro-nano structures that several inorganic matter micro-nano structures include respectively with the polysilicon micro-nano structure array layer
Alignment.
6. preparation method according to claim 1, which is characterized in that carry out table to the inorganic matter micro-nano structure array layer
Based superhydrophobic thin films are made in face silicic acid anhydride, including：
The substrate for being formed with the polysilicon micro-nano structure array layer and the inorganic matter micro-nano structure array layer is placed
In the closed container for being equipped with hydrophobization solution；
After heating the closed container preset duration with preset temperature, dries, be made described super thin after the substrate is taken out
Water film.
7. preparation method according to claim 6, which is characterized in that the hydrophobization solution is by 17 fluorine decyl trimethoxies
Base silane, which is dissolved in isopropyl acetone, to be formed.
8. preparation method according to claim 1, which is characterized in that the polysilicon micro-nano structure array layer includes several
A polysilicon micro-nano structure, the gap between adjacent polysilicon micro-nano structure are 0.3um to 0.5um, the polysilicon micro-nano knot
The height of structure is 40nm to 50nm；The inorganic matter micro-nano structure array layer includes several inorganic matter micro-nano structures, adjacent nothing
Gap between machine object micro-nano structure is 0.3um to 0.5um, and the height of the inorganic matter micro-nano structure is 40nm to 50nm.
9. preparation method according to claim 1, which is characterized in that formed on the polysilicon micro-nano structure array layer
Inorganic matter micro-nano structure array layer, including：
The inorganic matter micro-nano structure array layer of second thickness is deposited on the polysilicon micro-nano structure array layer；Wherein,
The second thickness is 120nm to 150nm.
10. preparation method according to claim 1, which is characterized in that the inorganic matter micro-nano structure array layer is dioxy
SiClx micro-nano structure array layer.
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| CN113634293A (en) * | 2021-08-09 | 2021-11-12 | 复旦大学 | Light-operated all-inorganic EWOD device |
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| CN101519278A (en) * | 2009-03-27 | 2009-09-02 | 吉林大学 | Method for preparing transparent super-hydrophobic automatic cleaning coating |
| CN102627256A (en) * | 2012-04-16 | 2012-08-08 | 北京大学 | Micro-nano integrated processing technology based three-dimensional anti-drag micro-channel structure and preparation method thereof |
| CN104292890A (en) * | 2013-07-17 | 2015-01-21 | 西门子公司 | Preparation method and application of ultra-hydrophobic coating |
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