CN108511412B - Lead frame redistribution structure and manufacturing method thereof - Google Patents
Lead frame redistribution structure and manufacturing method thereof Download PDFInfo
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- CN108511412B CN108511412B CN201810357524.4A CN201810357524A CN108511412B CN 108511412 B CN108511412 B CN 108511412B CN 201810357524 A CN201810357524 A CN 201810357524A CN 108511412 B CN108511412 B CN 108511412B
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- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
- H01L2224/02331—Multilayer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides a redistribution structure of a lead frame and a manufacturing method thereof, wherein flexible redistribution or interconnection of various different requirements of pins can be realized by utilizing a redistribution layer outside a first packaging layer; the redistribution layer is formed by a laser activation method, so that the method is simple and reliable and saves cost; the light shield can prevent the activatable metal complex from being reactivated in later long-term use to cause unreliable redistribution lines.
Description
Technical Field
The invention relates to the field of chip interconnection packaging, in particular to a redistribution structure of a lead frame and a manufacturing method thereof.
Background
Most of the existing lead frame packages adopt a lead frame structure with a pre-formed established structure, and the established lead frame is not beneficial to subsequent re-interconnection, and often needs to be re-formed by an additional intermediate board or a PCB (printed circuit board). For example, in fig. 1, a lead frame includes a substrate 1 and leads 2, which are encapsulated by a resin 5, and when two leads 2a and 2b of the leads need to be connected, an interconnection structure 2c is often formed during the manufacture of the lead frame, which is not favorable for subsequent rewiring and wastes lead frame material.
Disclosure of Invention
In order to solve the above problems, the present invention provides a leadframe redistribution structure, including:
the lead frame comprises a substrate and a plurality of mutually independent pins which are arranged around the substrate and have the same shape;
the first chip and the second chip are positioned on the substrate and are electrically connected to the pins through a plurality of leads respectively;
a first resin layer containing an activatable metal complex, sealing the base, the first chip and the second chip and sealing a portion of each of the plurality of leads;
a redistribution layer, which is a metal layer obtained by laser activation of an activatable metal complex in the first resin layer, is embedded in the first resin layer and is flush with the surface of the first resin layer, wherein the redistribution layer electrically connects at least two pins of the plurality of pins so that the first chip is electrically connected with the second chip;
the light shielding layer completely wraps the first resin layer;
and the second resin layer completely wraps the light shielding layer.
According to an embodiment of the present invention, the first resin layer has a rectangular parallelepiped shape.
According to an embodiment of the invention, the redistribution layer is arranged on one surface of the cuboid.
According to an embodiment of the invention, the redistribution layer extends from one surface of the cuboid to another surface of the cuboid.
According to an embodiment of the invention, the two pins protrude from different surfaces of the cuboid.
According to an embodiment of the invention, the redistribution layer further comprises a ring portion surrounding the two pins.
According to an embodiment of the present invention, solder or conductive paste is further disposed on the annular portion to ensure reliability of electrical connection between the pin and the redistribution layer.
The present invention also provides a method for manufacturing a redistribution structure of a lead frame, comprising:
(1) providing a lead frame which comprises a substrate and a plurality of mutually independent pins which are arranged around the substrate and have the same shape;
(2) adhering a first chip and a second chip on the base body and respectively welding the first chip and the second chip to the pins through a plurality of leads;
(3) sealing with a first resin layer containing an activatable metal complex that seals the base, the first chip, and the second chip and seals a portion of each of the plurality of leads;
(4) laser activating an activatable metal complex in the first resin layer to obtain a redistribution layer embedded in the first resin layer and flush with the surface of the first resin layer, wherein the redistribution layer is electrically connected with at least two pins of the plurality of pins so as to electrically connect the first chip with the second chip;
(5) depositing a light shielding layer which completely wraps the first resin layer, wherein the light shielding layer is made of an insulating, heat-dissipating and light-tight material;
(6) and forming a second resin layer by injection molding, and completely wrapping the light shading layer.
According to an embodiment of the present invention, the second resin layer is an epoxy, polyimide or other polymer.
According to an embodiment of the invention, the lead frame is integrally formed.
The invention has the following advantages:
(1) the redistribution layer outside the first packaging layer can realize flexible redistribution or interconnection of various different requirements of the pins;
(2) the redistribution layer is formed by a laser activation method, so that the method is simple and reliable and saves cost;
(3) the light shield can prevent the activatable metal complex from being reactivated in later long-term use to cause unreliable redistribution lines.
Drawings
FIG. 1 is a perspective view of a prior art leadframe redistribution structure;
FIG. 2 is a perspective view of a leadframe redistribution structure of the present invention;
fig. 3-5 are side views of different redistribution layers of the leadframe redistribution structure of the present invention;
fig. 6 is a perspective view of a lead frame of the present invention having a light-shielding layer and a second resin layer in a distributed structure.
Detailed Description
Referring to fig. 2-6, the leadframe redistribution structure of the present invention comprises:
the lead frame comprises a substrate 1 and a plurality of mutually independent pins 2 which are same in shape and surround the substrate 1;
a first chip 3a and a second chip 3b, wherein the first chip 3a and the second chip 3b are located on the substrate 1 and electrically connected to the plurality of leads 2 through a plurality of leads 4, respectively;
a first resin layer 5a containing an activatable metal complex, which seals the base 1, the first chip 3a and the second chip 3b and seals a part of each of the plurality of leads 2;
a redistribution layer 6, which is a metal layer obtained by laser activation of an activatable metal complex in the first resin layer 5a, the redistribution layer 6 being embedded in the first resin layer 5a and being flush with the surface of the first resin layer 5a, wherein the redistribution layer 6 electrically connects at least two pins 2a, 2b of the plurality of pins 2 so that the first chip 3a is electrically connected with the second chip 3 b;
a light shielding layer 7 completely wrapping the first resin layer 5 a;
and a second resin layer 8 completely wrapping the light shielding layer 7.
Wherein the shape of first resin layer 5a is the cuboid, redistribution layer 6 is arranged on a surface of the cuboid, of course, optionally, as the embodiment of flexibility, redistribution layer 6 extends from a surface of the cuboid to another surface of the cuboid, at which time, two pins 2a, 2b are extended from different surfaces of the cuboid.
In order to ensure the reliability of the electrical connection, the redistribution layer 6 further comprises a ring-shaped portion 6a surrounding the two pins 2a, 2 b. Solder or conductive paste (not shown) is also provided on the annular portion 6a to ensure reliability of the electrical connection of the pins 2 to the redistribution layer 6.
The present invention also provides a method for manufacturing a redistribution structure of a lead frame, comprising:
(1) providing a lead frame which comprises a substrate and a plurality of mutually independent pins which are arranged around the substrate and have the same shape;
(2) adhering a first chip and a second chip on the base body and respectively welding the first chip and the second chip to the pins through a plurality of leads;
(3) sealing with a first resin layer containing an activatable metal complex that seals the base, the first chip, and the second chip and seals a portion of each of the plurality of leads;
(4) laser activating an activatable metal complex in the first resin layer to obtain a redistribution layer embedded in the first resin layer and flush with the surface of the first resin layer, wherein the redistribution layer is electrically connected with at least two pins of the plurality of pins so as to electrically connect the first chip with the second chip;
(5) depositing a light shielding layer which completely wraps the first resin layer, wherein the light shielding layer is made of an insulating, heat-dissipating and light-tight material;
(6) and forming a second resin layer by injection molding, and completely wrapping the light shading layer.
According to an embodiment of the present invention, the second resin layer is an epoxy, polyimide or other polymer.
According to an embodiment of the invention, the lead frame is integrally formed.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (10)
1. A leadframe redistribution structure, comprising:
the lead frame comprises a substrate and a plurality of mutually independent pins which are arranged around the substrate and have the same shape;
the first chip and the second chip are positioned on the substrate and are electrically connected to the pins through a plurality of leads respectively;
a first resin layer containing an activatable metal complex, sealing the base, the first chip and the second chip and sealing a portion of each of the plurality of leads;
a redistribution layer, which is a metal layer obtained by laser activation of an activatable metal complex in the first resin layer, is embedded in the first resin layer and is flush with the surface of the first resin layer, wherein the redistribution layer electrically connects at least two pins of the plurality of pins so that the first chip is electrically connected with the second chip;
the light shielding layer completely wraps the first resin layer;
and the second resin layer completely wraps the light shielding layer.
2. The lead frame redistribution structure of claim 1, wherein: the first resin layer is in the shape of a cuboid.
3. The lead frame redistribution structure of claim 2, wherein: the redistribution layer is disposed on one surface of the cuboid.
4. The lead frame redistribution structure of claim 3, wherein: the redistribution layer extends from one surface of the cuboid to another surface of the cuboid.
5. The lead frame redistribution structure of claim 4, wherein: the two pins extend from different surfaces of the cuboid.
6. The lead frame redistribution structure of claim 1, wherein: the redistribution layer also includes an annular portion surrounding the two pins.
7. The lead frame redistribution structure of claim 6, wherein: solder or conductive paste is also provided on the annular portion to ensure reliability of electrical connection of the pins with the redistribution layer.
8. A method of manufacturing a leadframe redistribution structure, comprising:
(1) providing a lead frame which comprises a substrate and a plurality of mutually independent pins which are arranged around the substrate and have the same shape;
(2) adhering a first chip and a second chip on the base body and respectively welding the first chip and the second chip to the pins through a plurality of leads;
(3) sealing with a first resin layer containing an activatable metal complex that seals the base, the first chip, and the second chip and seals a portion of each of the plurality of leads;
(4) laser activating an activatable metal complex in the first resin layer to obtain a redistribution layer embedded in the first resin layer and flush with the surface of the first resin layer, wherein the redistribution layer is electrically connected with at least two pins of the plurality of pins so as to electrically connect the first chip with the second chip;
(5) depositing a light shielding layer which completely wraps the first resin layer, wherein the light shielding layer is made of an insulating, heat-dissipating and light-tight material;
(6) and forming a second resin layer by injection molding, and completely wrapping the light shading layer.
9. The manufacturing method of a leadframe redistribution structure as set forth in claim 8, wherein: the second resin layer is epoxy resin or polyimide.
10. The manufacturing method of a leadframe redistribution structure as set forth in claim 8, wherein: the lead frame is integrally formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810357524.4A CN108511412B (en) | 2018-04-20 | 2018-04-20 | Lead frame redistribution structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810357524.4A CN108511412B (en) | 2018-04-20 | 2018-04-20 | Lead frame redistribution structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN108511412A CN108511412A (en) | 2018-09-07 |
| CN108511412B true CN108511412B (en) | 2020-07-31 |
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| CN201810357524.4A Active CN108511412B (en) | 2018-04-20 | 2018-04-20 | Lead frame redistribution structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109967872B (en) * | 2019-04-23 | 2021-05-07 | 苏州福唐智能科技有限公司 | Semiconductor laser welding method and welding structure thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS596566A (en) * | 1982-07-05 | 1984-01-13 | Hitachi Ltd | Lead frame and semiconductor device therewith |
| CN101019464A (en) * | 2004-09-13 | 2007-08-15 | 奥迪康有限公司 | Audio processing device with encapsulated electronic component. |
| CN105374855A (en) * | 2014-08-07 | 2016-03-02 | 英飞凌科技股份有限公司 | Device and method for manufacturing a device |
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2018
- 2018-04-20 CN CN201810357524.4A patent/CN108511412B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS596566A (en) * | 1982-07-05 | 1984-01-13 | Hitachi Ltd | Lead frame and semiconductor device therewith |
| CN101019464A (en) * | 2004-09-13 | 2007-08-15 | 奥迪康有限公司 | Audio processing device with encapsulated electronic component. |
| CN105374855A (en) * | 2014-08-07 | 2016-03-02 | 英飞凌科技股份有限公司 | Device and method for manufacturing a device |
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| Publication number | Publication date |
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| CN108511412A (en) | 2018-09-07 |
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Effective date of registration: 20200623 Address after: 318050 Shangni village, Luoyang street, Luqiao District, Taizhou City, Zhejiang Province Applicant after: Taizhou Guangyuan Stationery Co., Ltd Address before: 262700 South Ring Road, Shouguang City, Weifang, Shandong Province, No. 1500 Applicant before: Han Dejun |
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| CI03 | Correction of invention patent |
Correction item: Applicant|Address Correct: Taizhou Guangyuan Stationery Co., Ltd|318050 Shangni village, Luoyang street, Luqiao District, Taizhou City, Zhejiang Province False: Taizhou Guangyuan Stationery Co., Ltd|318050 Shangni village, Luoyang street, Luqiao District, Taizhou City, Zhejiang Province Number: 28-02 Volume: 36 |