CN108508533A - A kind of array laser induced fluorescence waveguide chip and manufacture craft - Google Patents
A kind of array laser induced fluorescence waveguide chip and manufacture craft Download PDFInfo
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- CN108508533A CN108508533A CN201810310306.5A CN201810310306A CN108508533A CN 108508533 A CN108508533 A CN 108508533A CN 201810310306 A CN201810310306 A CN 201810310306A CN 108508533 A CN108508533 A CN 108508533A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
Abstract
The present invention relates to a kind of array laser induced fluorescence waveguide chip and manufacture crafts, wherein waveguide chip includes substrate；Base top opens up the first y-branch structure, and two bifurcations of the first y-branch structure offer the second y-branch structure and form four branches as light splitting region；First y-branch structure and the second y-branch structure leading portion and the single shape waveguiding structure of bottom waveguide core layer composition low-refraction difference form the single mode transport of light, and double slab waveguide composite structures of the second y-branch structure back segment, bottom waveguide core layer and top waveguide sandwich layer composition high index-contrast form the multimode transmissions of light；Interval opens up several grooves on the clad of every 1 second y-branch structural top back segment and bare top waveguide core layer is as sensing window.
Description
Technical field
The present invention relates to a kind of array laser induced fluorescence waveguide chip and manufacture craft based on standard CMOS process,
It is related to optical analysis and detection technique field.
Background technology
Optical biosensor is mostly based on evanescent wave principle.Evanescent wave is called evanescent waves, refer to when being totally reflected,
Incident light is all reflected back optically denser medium, but the one kind generated on the interface of two kinds of different mediums is with apart from exponentially
The electromagnetic field of decaying.Using evanescent wave energy excitation sensing element surface capture fluorescent molecular, thus can set up with it is to be measured
The quantitative relationship of pollutant concentration in sample.Since evanescent wave penetration depth only has hundreds of nm, it can effectively weaken background interference,
Sensitivity and selectivity are improved, therefore the sensor based on evanescent wave induced fluorescence has very high detection sensitivity, can be used for
The detection of trace materials.
Multi objective parallel detection, which has, is more and more widely used demand and foreground.It is usually required in multi objective parallel detection
Using different biochemical reaction conditions, in order to from spatially differential responses process is isolated, need to design the light path of bifurcated
Structure is to form multiple transmission lines, also referred to as multi-channel laser induced fluorescence chip.In European Union the 5th, 6 wheel frame plans
The 32 index planar type optical waveguide laser induced fluorescence sensing chip of four-way researched and developed under the guide of (FP5, FP6) is this aspect
Representative achievements.The chip forms buried light waveguide structure with ion-exchange process on glass of high refractive index surface, then leads to
Four-way light path is formed after Y types bifurcation structure twice, the shortcomings that structure is that the refractive index difference of optical waveguide and base material is small,
Cause evanescent wave surface electric field intensity small, and transmission loss is big, causes the signal difference between each sensing site big.Therefore it studies low
Loss, highly sensitive array type optical waveguide chip cause the extensive concern of researcher.
Invention content
In view of the above-mentioned problems, the object of the present invention is to provide a kind of low-loss and the array laser induced fluorescences of high sensitivity
Waveguide chip and its manufacture craft.
To achieve the above object, the present invention takes following technical scheme：A kind of array laser induced fluorescence waveguide chip,
It is characterized in that the waveguide chip includes：Substrate；The base top opens up the first y-branch structure, the first y-branch knot
Two bifurcations of structure offer the second y-branch structure and form four branches as light splitting region；The substrate is provided with
Bottom waveguide core layer, the bottom waveguide core layer top are provided with separation layer, the back segment separation layer of the second y-branch structure
Top is provided with top waveguide sandwich layer, and clad is provided at the top of the top layers waveguide core layer, wherein the first Y types point
The single shape waveguiding structure that branch structure and the bottom waveguide core layer of the second y-branch structure leading portion constitute low-refraction difference forms light
Single mode transport, the second y-branch structure back segment, bottom waveguide core layer and top waveguide sandwich layer constitute high index-contrast
Double slab waveguide composite structures form the multimode transmissions of light；On the clad of each second y-branch structural top back segment
Interval opens up several grooves and the exposed top waveguide sandwich layer is as sensing window.
Further, the sensing window mouth of adjacent two branches is staggered, and is interfered to prevent stop signal.
Further, the size of each sensing window is 1.5mm × 0.8mm, the adjacent sensing window of same branch
The centre-to-centre spacing of mouth is 4mm.
Further, the incidence end of the single shape waveguiding structure is provided with incident label.
Further, the width of first y-type structure and the second y-type structure is 1 μm, and each 2nd Y types
The outermost of structure is 5.5nm, the distance between the Liang Ge branches of second y-type structure with the outer peripheral distance of the substrate
For 3mm.
Further, the bottom waveguide core layer and the top waveguide sandwich layer are all made of Si3N4。
Further, the separation layer and clad are all made of SiO2。
Further, the substrate is made of glass wafer.
To achieve the above object, the present invention also takes following technical scheme：A kind of array laser induced fluorescence waveguide chip
Manufacture craft, it is characterised in that including the following contents：
Select base material；
Make single shape waveguiding structure：Using low-pressure chemical vapor deposition bottom waveguide core layer, low folding is formed
Penetrate rate difference region；
Layer deposited isolating：Using LPCVD method layer deposited isolatings；
Make double slab waveguide structures：Using LPCVD method deposited top layer waveguide core layers, bottom waveguide core layer and top layer waveguide
Form high index-contrast region；
Determine waveguiding structure transition region：It is realized by low-index regions to high-index regions using photomask and photoetching technique
Conversion；
Counter ion etches y-branch structure, obtains four branches as light splitting region；
Deposit clad：Clad is deposited using LPCVD methods；
Etching sensing window：Entire waveguide chip surface is polished using chemical mechanical grinding, removes clad, in clad
Locate exposed top layer waveguide core layer as sensing window.
The invention adopts the above technical scheme, which has the following advantages：1, the present invention provides low-loss, array swashs
Light induced fluorescence sensing chip is used in combination with the fluorescence signal detection unit of low cost, can detect plurality of target object simultaneously
Matter (such as large biological molecule, organic molecule, virus and bacterium), and since it is with high sensitivity, simple operation and other advantages,
It has a wide range of applications in every field such as bioanalysis, medical diagnosis, environmental monitoring, inspection for food hygiene.2, this hair
In the bright coupled into waveguide by exciting light, realize that light path is divided into two using the y-branch structure in waveguiding structure, exciting light passes through
3 y-branch structures are assigned in 4 waveguides, and the waveguide chip of making can be used for multichannel multi objective pollutant monitoring.3、
The multichannel low-loss array optical waveguide sensing element of the present invention is using glass wafer as substrate, and design one kind is in common wavelengths
Propagation loss is low under the conditions of (635nm feux rouges and 520nm green lights), and surface evanescent wave intensity is high, and difference is small between chip manufacturing batch
Array optical waveguide chip, form different waveguides on the glass substrate using CMOS (complementary metal oxide semiconductor) technique
The making of chip of light waveguide high-volume low cost may be implemented in structure.4, the present invention covers one layer of SiO in entire waveguide surface2
As separation layer, to prevent contact of the environmental matrices with waveguide from leading to light scattering.5, the present invention utilizes high-index material Si3N4
For waveguide core layer, SiO2Optical simulation is passed through using the waveguiding structure of single slab waveguide and double slab waveguide combinations for clad
Simulation determines optimal chip structure parameter, and makes array sensing chip, array optical waveguide chip tool based on CMOS technology
Have that loss of light propagation is low, surface evanescent wave intensity is high, difference is small between chip manufacturing batch, it is easy to accomplish industrialization promotion has
Significantly functionization advantage is expected to that multichannel array optical waveguide sensing chip is pushed to move towards practical application from laboratory.
Description of the drawings
Fig. 1 is the structural schematic diagram of array laser induced fluorescence waveguide chip of the present invention；
Fig. 2 is the concrete technology flow process figure that CMSO techniques of the present invention make multichannel waveguide chip, wherein black indicates
Si3N4Layer, grey indicate SiO2Layer.
Specific implementation mode
Come to carry out detailed description to the present invention below in conjunction with attached drawing.It should be appreciated, however, that attached drawing has been provided only more
Understand the present invention well, they should not be interpreted as limitation of the present invention.
The array laser induced fluorescence waveguide chip of the present invention is divided into two regions by thin film deposition processes, and one is single
Layer Si3N4For the low-refraction difference region of waveguiding structure, this region is single mode structure, is easy to the coupling of incident light；And utilize Y types
Incident light is evenly distributed to 4 branches of waveguiding structure by branch, is defined as splitting area；Another region is with the double-deck Si3N4For wave
The high index-contrast region of guide structure is entered after waveguiding structure with being easy to exciting light in the stronger evanescent wave of waveguide surface generation
Energy is defined as detection zone；Design sensing window in 4 waveguides of detection zone, determinand is excited for evanescent wave.
Based on above-mentioned design principle, as shown in Figure 1 and Figure 2, the array laser provided by the invention based on standard CMOS process
Induced fluorescence waveguide chip, includes the substrate 1 of glass wafer making, and 1 top of substrate passes through standard CMOS process and the first Y types are arranged
Branched structure 2, two bifurcations of the first y-branch structure 2 offer the second y-branch structure 3 and form four branches' works
For light splitting region, one layer of Si is arranged in 1 top of substrate3N4As bottom waveguide core layer 5,5 one layer of the top setting of bottom waveguide core layer
SiO2As separation layer 6, one layer of Si is arranged in 6 top of back segment separation layer for being located at 3 top of the second y-branch structure3N4As top
Waveguide core layer 7, the top setting second layer SiO of top layers waveguide core layer 72As clad 8, wherein bottom waveguide core layer 5
(3 leading portion of the first y-branch structure 2 and the second y-branch structure) forms low-refraction difference region, and low-refraction difference region is single
Slab waveguide structure forms the single mode transport of light, 3 back segment of the second y-branch structure, bottom waveguide core layer 5 and top waveguide sandwich layer
7 constitute high index-contrast region, this region is the multimode transmissions that double slab waveguide composite structures form light, every 1 second Y types point
The clad interval at 3 top of branch structure opens up several grooves and bare top waveguide core layer 7 is as sensing window 9.
In a preferred embodiment, 1 size of substrate is 65mm × 20mm × 1mm.
In a preferred embodiment, the waveguide length of single shape waveguiding structure is 16.7mm.
In a preferred embodiment, each branch in four branches of the invention is spaced 4 sensing windows 9 of setting
(without being limited thereto as example, can be configured according to specific detection case), i.e. array laser induced fluorescence wave of the invention
It leads chip and is provided with 32 sensing windows 9 altogether, you can be detected simultaneously for 32 kinds of criteria pollutants, and adjacent Liang Tiao branches
Sensing window 9 is staggered, and to prevent the signal interference between sensing window mouth 9, the size of each sensing window 9 can be 1.5mm
The centre-to-centre spacing of × 0.8mm, same branch's neighboring sensor window 9 can be 4mm.
In a preferred embodiment, in order to facilitate optical fiber and waveguiding structure optical coupling, single shape waveguiding structure enters
It penetrates end and is provided with incident label 10, the width of incident label 10 is 0.4nm.
In a preferred embodiment, the width of the first y-type structure 2 and the second y-type structure 3 is 1 μm, and every 1
The outermost of two y-type structures 3 is 5.5nm, the distance between the Liang Ge branches of the second y-type structure 3 with 1 outer peripheral distance of substrate
For 3mm.
As shown in Fig. 2, the manufacture craft detailed process of array laser induced fluorescence waveguide chip of the present invention is：
1) base material is selected：The embodiment of the present invention uses a diameter of 100mm, 500 μm of circle SiO of thickness2Wafer is as base
Bottom 1.
2) single shape waveguiding structure is made：One layer of Si is deposited using low-pressure chemical vapour deposition technique (LPCVD)3N4As
Bottom waveguide core layer 5, the target thickness of bottom waveguide core layer 5：25nm；Survey thickness：29.1nm；Refractive index (633nm)：
2.0136。
3) SiO is deposited2Separation layer 6：One layer of SiO is deposited using LPCVD methods2It is isolated the two of high-index regions as separation layer
Layer waveguide core layer, the target thickness of separation layer 6：100nm；Survey thickness：106.6nm；Refractive index (633nm)：1.4507.
4) double slab waveguide structures：One layer of Si is deposited with LPCVD methods3N4Double slab waveguides are constituted as top layer waveguide core layer 7
Composite structure.The target thickness of top layer waveguide core layer 7：70nm；Survey thickness：70.6nm；Refractive index (633nm)：2.0119.
5) waveguiding structure transition region is determined：It is realized by low-index regions to high-index regions using photomask and photoetching technique
Conversion.
6) counter ion etches (RIE) waveguiding structure, obtains y-branch structure.
7) SiO is deposited2Clad 8：SiO is deposited with LPCVD methods2Clad 8, the target thickness of clad 8：3000nm；It is real
Thickness Measurement by Microwave：2933.8-2076.6nm；Refractive index (633nm)：1.4558.
8) etching sensing window 9：Using chemical mechanical grinding polishing waveguide chip surface, each window 9 that senses is divided out greatly
Fall 250nm SiO2Clad exposes top layer waveguide core layer 7 as sensing window at clad 8.
Embodiment：
As shown in Figure 1, the array laser induced fluorescence waveguide chip of the present invention has 32 sensing windows (4 × 8), exciting light
It is the feux rouges that wavelength is 635nm, the 32 sites (sensing that exciting light can be evenly distributed to using y-branch structure in waveguide
Window).It is passed through Cy5.5 fluorescent dye solutions on 32 sites, the 32 of the present embodiment array laser induced fluorescence waveguide chip
A site can reach 1nM to the detection limit of Cy5.5 fluorescent molecular solution, absolutely prove the sensitivity of sensor of the invention very
Height can be used for subsequent immunoassay, and complete to be less than 25min the time required to the detection of first order fluorescence signal.
The various embodiments described above are merely to illustrate the present invention, wherein the structure of each component, connection type and manufacture craft etc. are all
It can be varied from, every equivalents carried out based on the technical solution of the present invention and improvement should not exclude
Except protection scope of the present invention.
Claims (9)
1. a kind of array laser induced fluorescence waveguide chip, it is characterised in that the waveguide chip includes：
Substrate；
The base top opens up the first y-branch structure, and two bifurcations of the first y-branch structure offer
Two y-branch structures form four branches as light splitting region；
The base top is provided with bottom waveguide core layer, and separation layer, the 2nd Y are provided at the top of the bottom waveguide core layer
It is provided with top waveguide sandwich layer at the top of the back segment separation layer of type branched structure, cladding is provided at the top of the top layers waveguide core layer
Layer, wherein the first y-branch structure and the second y-branch structure leading portion and bottom waveguide core layer constitute low-refraction
The single shape waveguiding structure of difference forms the single mode transport of light, the second y-branch structure back segment, bottom waveguide core layer and top
Double slab waveguide composite structures of waveguide core layer composition high index-contrast form the multimode transmissions of light；
Interval opens up several grooves and the exposed top wave on the clad of each second y-branch structural top back segment
Sandwich layer is led as sensing window.
2. array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that adjacent two branch
Sensing window mouth is staggered, and is interfered to prevent stop signal.
3. a kind of array laser induced fluorescence waveguide chip according to claim 2, which is characterized in that each sensing
The size of window is 1.5mm × 0.8mm, and the centre-to-centre spacing of the adjacent sensing window of same branch is 4mm.
4. a kind of array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that the single shape wave
The incidence end of guide structure is provided with incident label.
5. a kind of array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that the first Y types
Structure and the width of the second y-type structure are 1 μm, and the outermost of each second y-type structure and the substrate outer edge
Distance be 5.5nm, the distance between Liang Ge branches of second y-type structure be 3mm.
6. a kind of array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that the bottom waveguide
Sandwich layer and the top waveguide sandwich layer are all made of Si3N4。
7. a kind of array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that the separation layer and
Clad is all made of SiO2。
8. a kind of array laser induced fluorescence waveguide chip according to claim 1, which is characterized in that the substrate uses
Glass wafer makes.
9. a kind of manufacture craft of array laser induced fluorescence waveguide chip, it is characterised in that including the following contents：
Select base material；
Make single shape waveguiding structure：Using low-pressure chemical vapor deposition bottom waveguide core layer, low-refraction is formed
Poor region；
Layer deposited isolating：Using low-pressure chemical vapor deposition separation layer；
Make double slab waveguide structures：Using low-pressure chemical vapor deposition top layer waveguide core layer, bottom waveguide core layer
High index-contrast region is formed with top layer waveguide；
Determine waveguiding structure transition region：It is realized using photomask and photoetching technique and is turned by low-index regions to high-index regions
It changes；
Counter ion etches y-branch structure, obtains four branches as light splitting region；
Deposit clad：Using low-pressure chemical vapor deposition clad；
Etching sensing window：Entire waveguide chip surface is polished using chemical mechanical grinding, removes clad, it is naked at clad
Reveal top layer waveguide core layer as sensing window.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810310306.5A CN108508533A (en) | 2018-04-09 | 2018-04-09 | A kind of array laser induced fluorescence waveguide chip and manufacture craft |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810310306.5A CN108508533A (en) | 2018-04-09 | 2018-04-09 | A kind of array laser induced fluorescence waveguide chip and manufacture craft |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594547A (en) * | 2022-03-31 | 2022-06-07 | 南开大学 | Optical waveguide coupler and preparation method thereof |
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| FR2705792A1 (en) * | 1993-05-25 | 1994-12-02 | Alsthom Cge Alcatel | Integrated-optic component and method of fabricating such a component |
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| CN105209883A (en) * | 2012-10-08 | 2015-12-30 | 新加坡科技研究局 | Refractive index sensor for analyzing an analyte, and method of fabricating thereof |
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2018
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| EP0819955A2 (en) * | 1992-02-05 | 1998-01-21 | BRITISH TELECOMMUNICATIONS public limited company | Silica waveguide structure |
| FR2705792A1 (en) * | 1993-05-25 | 1994-12-02 | Alsthom Cge Alcatel | Integrated-optic component and method of fabricating such a component |
| CN105209883A (en) * | 2012-10-08 | 2015-12-30 | 新加坡科技研究局 | Refractive index sensor for analyzing an analyte, and method of fabricating thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594547A (en) * | 2022-03-31 | 2022-06-07 | 南开大学 | Optical waveguide coupler and preparation method thereof |
| CN114594547B (en) * | 2022-03-31 | 2023-09-01 | 南开大学 | Optical waveguide coupler and method for manufacturing the same |
| WO2023184888A1 (en) * | 2022-03-31 | 2023-10-05 | 南开大学 | Optical waveguide coupler and preparation method therefor |
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