CN108504300A - A kind of crystalline silicon photovoltaic module high-barrier high reflection back veneer material - Google Patents
A kind of crystalline silicon photovoltaic module high-barrier high reflection back veneer material Download PDFInfo
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- CN108504300A CN108504300A CN201810270862.4A CN201810270862A CN108504300A CN 108504300 A CN108504300 A CN 108504300A CN 201810270862 A CN201810270862 A CN 201810270862A CN 108504300 A CN108504300 A CN 108504300A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NXQNMWHBACKBIG-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCCC(O)(O)O Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCCC(O)(O)O NXQNMWHBACKBIG-UHFFFAOYSA-N 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- GBFVZTUQONJGSL-UHFFFAOYSA-N ethenyl-tris(prop-1-en-2-yloxy)silane Chemical compound CC(=C)O[Si](OC(C)=C)(OC(C)=C)C=C GBFVZTUQONJGSL-UHFFFAOYSA-N 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- HEQBUZNAOJCRSL-UHFFFAOYSA-N iron(ii) chromite Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Fe+3] HEQBUZNAOJCRSL-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HCOKJWUULRTBRS-UHFFFAOYSA-N propan-2-yloxysilane Chemical compound CC(C)O[SiH3] HCOKJWUULRTBRS-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical group CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/41—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the carrier layer
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention discloses a kind of crystalline silicon photovoltaic module high-barrier high reflection back veneer materials, it is successively by polyester base film layer, high-obstruction, it is uniformly distributed in the multiple high reflection structures and foamed cement layer composition of high-obstruction upper surface, high-obstruction is formed by the first matrix resin layer and the second matrix resin layer by double-layer coextrusion, first matrix resin layer is bonded together by adhesive and polyester base film layer, high reflection structure is formed by way of mechanical stamp on the second matrix resin layer, and pass through heat cure, ultraviolet light cures, the modes such as radiation curing or microwave curing carry out solidifying and setting, foamed cement layer passes through spraying, the modes such as showering or blade coating are coated on the second matrix resin layer.Backboard produced by the present invention, also with good outdoor weathe resistance, is a kind of high-barrier high reflection back veneer material of the crystalline silicon photovoltaic module of excellent combination property while with good barrier properties, ultra-high reflectivity.
Description
Technical field
The invention belongs to photovoltaic encapsulation Material Fields, are related to a kind of crystalline silicon photovoltaic module oxygen back veneer material that blocks water.
Background technology
With the increasingly depleted and environmental pollution getting worse of the fossil fuels such as coal, oil, natural gas, new energy is greatly developed
Source has become the vital task of a globalization.Solar energy is a kind of clean, efficient and never-exhausted new energy, either
Now or solar energy in future is owned by vast market prospect.In recent years, as the representative of green energy resource, solar power generation is got over
It is paid close attention to by people to get over.It is well known that solar components are by front layer glass, front layer EVA adhesive film, cell piece, rear layer EVA glue
The encapsulation such as film, solar energy backboard, aluminium frame composition, wherein solar energy backboard are located at entire module backside and are playing electric insulating quality
While must also have certain effect in terms of blocking water, hindering oxygen, for protecting cell piece not to be etched.
But the universal water vapor transmittance of solar energy backboard currently on the market is high, generally maintains 1~3g/m2D or so,
It is also detrimental to the protection to cell piece in this way, influences the generated output and service life of cell piece.Have in industry very much
Solution, described in such as patent CN104868003A using aluminium foil, iron foil, tinfoil paper, zinc foil, nickel foil, copper foil, silver foil, platinum foil,
Goldleaf etc. is used as water blocking layer, although good block-water effect can be played, this backboard is expensive, complicated for operation, no
Conducive to backboard large-scale use.For another example the water vapor transmittance of the backboard that blocks water described in patent CN205264733U or relatively high have
0.8g/m2D or so, block-water effect or not ideal enough, it is also necessary to further increase.On the other hand, currently on the market too
Positive energy backboard does not cause enough attention also in terms of oxygen barrier property, and there is presently no a backboards can be in resistance oxygen side
Face provides effective solution,.Oxygen can cause EVA agings, welding oxidation, to influence the service life of entire component.
So there is a large amount of oxygen to enter component internal again under the premise of water vapor barrier property is weaker to accelerate cell piece contaminated,
Influence the generated output of component.And the service life and generating efficiency of solar components be exactly photovoltaic enterprise and installation quotient most pay attention to
Two indices.Meanwhile it being damaged by increasing the system of photovoltaic module to reduce straight, exchange side line loss and step down side winding
Consumption, while the power density of inverter, transformer is promoted, volume reduces, and transport, maintenance etc. workload are also accordingly reduced,
Be conducive to the reduction of photovoltaic module cost.But currently on the market the partial discharge voltage of photovoltaic back usually 1000~
1200VDC only adapts to conventional photovoltaic component system, for larger system photovoltaic module there are prodigious security risk,
Researching and developing a kind of photovoltaic back with high partial discharge voltage is highly desirable the reduction of photovoltaic module cost.Meanwhile improving backboard
Reflectivity be conducive to improve component generating efficiency and reduce production cost.
Therefore it researches and develops a not only with high barrier, high reflectance but also the crystalline silicon photovoltaic module that can apply to different system
Back veneer material is extremely important.
Invention content
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of crystalline silicon photovoltaic module high-barrier high reflection
Back veneer material.
The purpose of the present invention is what is be achieved through the following technical solutions：A kind of crystalline silicon photovoltaic module high-barrier high reflection back of the body
Plate material, which is characterized in that successively by polyester base film layer, high-obstruction, be uniformly distributed in the multiple high of high-obstruction upper surface
Catoptric arrangement and foamed cement layer composition；The high-obstruction is passed through double by the first matrix resin layer and the second matrix resin layer
Layer is co-extruded；The first matrix resin layer by mass fraction be 80~90% the first matrix resin, 6~50% it is inorganic
Filler, 0.01~1% ultraviolet absorber, 0.01~1% thermo oxidative aging agent, 0.01~2% silane coupling agent, 0~
0.1% crosslinking agent, 0~0.1% assistant crosslinking agent composition；First matrix resin by ethylene and propylene, butylene, amylene,
One or more monomers in heptene, octene are copolymerized according to arbitrary ratio；The second matrix resin layer is by mass fraction
70~90% ethylene-vinyl alcohol copolymer, 5~15% high reflection filler, 4~20% auxiliary packing, 0.01~1%
Ultraviolet absorber, 0.01~0.1% thermo oxidative aging agent, 0.01~2% silane coupling agent, 0~0.1% crosslinking agent, 0
~0.1% assistant crosslinking agent composition.
The first matrix resin layer is bonded together by adhesive and polyester base film layer, and the high reflection structure passes through
The mode of mechanical stamp is formed on the second matrix resin layer, and solid by heat cure, ultraviolet light solidification, radiation curing or microwave
The modes such as change carry out solidifying and setting to it；The shape of high reflection structure is by positive rectangular pyramid, positive triangular pyramid type, long column type, circular arc
One or more of mixing compositions of type；Foamed cement layer is coated in the second matrix resin by modes such as spraying, showering or blade coatings
On layer.
Further, the adhesive by adhesive for polyurethane, epoxy resin adhesive, acroleic acid resin adhesive and has
One or more of machine silicone resin adhesive is by arbitrary proportioning mixing composition.
Further, the polyester base film layer is 70~99% third matrix resin, 0~25% nothing by mass fraction
Machine filler, 0.1~10% hydrolysis stabilizer, 0.01~5% thermo oxidative aging agent, 0.1~1% ultraviolet absorber group
At；The third matrix resin is by polyethylene terephthalate, polybutylene terephthalate (PBT), polystyrene, poly- naphthalene
It is one or more mixed according to arbitrary proportioning in dioctyl phthalate butanediol ester, (ethylene naphthalate), polymethyl methacrylate
It is combined into.
Further, the foamed cement layer is 60~90% by mass fraction the 5th matrix resin, 0.1~3%
Foaming agent, 0~20% inorganic filler, 5~30% curing agent, 0.1~1% catalyst composition；The 5th main body tree
Fat is made of one or more of epoxy resin, acrylic resin, fluorocarbon resin, organic siliconresin by the mixing of arbitrary proportioning.
Further, the first matrix resin layer thickness is 20~100 μm, and the second matrix resin layer thickness is 20
~100 μm, the polyester base film layer thickness is 50~200 μm.
Further, the mass content of vinyl alcohol is 50~80% in the ethylene-vinyl alcohol copolymer resin.
Further, the high reflection filler is by titanium dioxide, magnesia, aluminium oxide, barium sulfate, calcium carbonate, carbon black, copper
Chrome black, siderochrome be black, the one or several kinds in iron oxide black are formed by the mixing of arbitrary proportioning, and the auxiliary packing is by nano-silica
Change one or more of titanium, nano silicon dioxide, nano aluminium oxide by arbitrary proportioning mixing composition, the size of auxiliary packing is
1~10 nanometer.
Further, the ultraviolet absorber is by ESCALOL 567,2- hydroxyl -4-4- methoxyl groups -
2 '-carboxyl benzophenones, 6,7 '-di-2-ethylhexylphosphine oxides (2- methyl -4,3,1- benzoxazines) -4- ketone, 2 ', 4,4 '-tetrahydroxy hexichol
It is one or more by the mixing of arbitrary proportioning in ketone, 2- (2 '-hydroxy-5-methyl base phenyl) -5- carboxybutyl ester benzotriazole
Composition；The thermo oxidative aging agent by 2,2- methylene-it is bis--(4- methyl-6-terts butyl) phenol, (the 4- tertiary butyls-of 1,3,5- tri-
3- hydroxyl -2,6- dimethyl benzyls), 3,5- di-t-butyl -4- hydroxy-benzoic acids cetyl ester, two hard ester group Ji Wusi
It is one or more according to arbitrary proportioning mixing composition in alcohol diphosphites, bisphenol-A bis- (diphenyl phosphoesters)；The silane
Coupling agent is by 3- triethoxy methyl silicane base -1- propylamine, γ-glycidyl ether oxygen propyl trimethoxy silicane, γ-methyl-prop
Alkene acryloxypropylethoxysilane trimethoxy silane, vinyltrimethoxysilane, vinyl three ('beta '-methoxy ethyoxyl) silane, ethylene
Ethyl triethoxy silicane alkane, vinyl silane triisopropoxide, vinyltriisopropenyloxysilane, methyl ethylene diethoxy
It is one or more by arbitrary in silane, methylvinyldimethoxysilane, divinyl triammonium base propyl trimethoxy silicane
Proportioning mixing composition；The crosslinking agent is by benzoyl peroxide, peroxidating butyl isopropylbenzene, bis- (the benzene first of 2,5- dimethyl -2,5-
Acyl peroxide)-hexane, bis- (t-butyl peroxy) ethyl butyrates of 3,3-, neighbour, the o- mono- peroxidating carbonic acid of the o- isopropyl-of tertiary butyl-
Ester, normal-butyl 4,4- bis- (tert-butyl peroxide) valerate, glycol methacrylate, divinylbenzene, trimethyl third
Alkane trimethyl acrylic ester, pentaerythritol triacrylate, pentaerythritol triacrylate, tetraethyl silane, N, N- methylene
It is one or more according to arbitrary proportioning mixing composition in double acryloyl ester amines；The assistant crosslinking agent is by 1,3,5- triallyl-
Guanamine, 4,6- triketones, N, N '-phenyl-bismaleimide, trimethylolpropane trimethacrylate, 1,2- polybutadienes
Alkene, triallyl isocyanate, triallyl isocyanate, diallyl phthalic acid ester, triallyl cyanurate, triolefin
It is one or more according to arbitrary proportioning mixing composition in propyl chlorinated isocyanurates.Hydrolysis stabilizer is by monomer Carbodiimides
One or more press in hydrolysis stabilizer, oxazoline compounds hydrolysis stabilizer, epoxy compound species hydrolysis stabilizer is appointed
Meaning is than mixing composition.
Further, the inorganic filler is by titanium dioxide, bloom barium sulfate, blanc fixe, calcium carbonate, mica powder, gold
Belong to one or more by arbitrary proportioning mixing composition in oxide, zeolite, glass microballoon.
Further, the foaming agent is by AN analog copolymers foam microspheres, acrylic copolymer foam microspheres, polyphenyl second
Alkene copolymer foam microspheres, supercritical carbon dioxide, azodicarbonamide, 2,2- azodiisobutyronitriles, azoformic acid two are different
Propyl ester, benzene sulfonyl hydrazide, 3, one or more of 3 '-disulfonyl hydrazide diphenyl sulphone (DPS)s are by arbitrary proportioning mixing composition.The curing agent
Triamine, isophorone diamine, bis- (4- amidos cyclohexyl) methane, hexamethylene diisocyanate trimerization are supportted for ethylenediamine, second two
It is one or more by arbitrary proportioning mixing composition in body, isoflurane chalcone diisocyanate tripolymer；The catalyst is by metatitanic acid
It is one or more according to arbitrary proportioning mixing group in four butyl esters, cobalt iso-octoate, monobutyltin oxide, dibutyl tin laurate
At.
The beneficial effects of the invention are as follows：The present invention is by changing the ectonexine structure of backboard, forming, to provide one kind
The photovoltaic component back plate that photoelectric conversion efficiency is high, production cost is low, this backboard with high-barrier, high optical reflectance it is same
When, also there is good effect in weatherability, adhesion strength etc..
Description of the drawings
Fig. 1 is the structural schematic diagram of the present invention.
In figure, polyester base film layer 1, high-obstruction 2, high reflection structure 3, foamed cement layer 4.
Specific implementation mode
As shown, a kind of high reflection photovoltaic component back plate material of the present invention, successively by polyester base film layer 1, high-obstruction
2, the high reflection structure 3 and foamed cement layer 4 for being uniformly distributed in high-obstruction upper surface form；High-obstruction 2 is by the first main body
Resin layer and the second matrix resin layer are formed by double-layer coextrusion；Polyester base film layer 1 is pasted onto the first main body tree by adhesive
In lipid layer, high reflection structure is formed by way of mechanical stamp on the second matrix resin layer, and passes through heat cure, ultraviolet light
The modes such as solidification, radiation curing or microwave curing carry out solidifying and setting to it.The shape of high reflection structure 3 by positive rectangular pyramid,
One or more of mixing compositions of positive triangular pyramid type, long column type, circular arc type.Foamed cement layer 4 passes through spraying, showering or blade coating etc.
Mode is coated on the second matrix resin layer.
In following embodiment, the ratio being not explicitly shown is mass percent.
Embodiment 1：
By 100 microns of PET (polyester base film layer), 100 microns of (barrier layer), 15 microns of acrylic resin foamed cements
Layer (foamed cement layer) is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure passes through
The mode of mechanical stamp is fixed on high-obstruction surface, and the logical cured mode of cross-linking radiation carries out solidifying and setting to it.Wherein
The titanium dioxide (Du Pont) that filler used is 10%, 2- hydroxyl -4-4- methoxyl groups -2 '-carboxyl that ultraviolet absorber used is 0.1%
γ-glycidyl ether oxygen propyl trimethoxy silicane that benzophenone, silane coupling agent used are 0.2%, crosslinking agent used are
0.1% peroxidating butyl isopropylbenzene and 0.1% 1,2- polybutadiene crosslinking coagents composition；The main correlated performance of gained backboard
It is shown in Table 1.
Embodiment 2：
By 100 microns of PET (polyester base film layer), 100 microns of (barrier layer), 15 microns of acrylate resin layers (not into
Row foaming) it is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure is printed by machinery
Colored mode is fixed on high-obstruction surface, and the logical cured mode of heat cross-linking carries out it solidifying and setting, and filler used is
10% titanium dioxide (Du Pont), ultraviolet absorber used be 0.1% 2- hydroxyl -4-4- methoxyl groups -2 '-carboxyl benzophenone,
The mistake that γ-glycidyl ether oxygen propyl trimethoxy silicane that silane coupling agent used is 0.2%, crosslinking agent used are 0.1%
Aoxidize butyl isopropylbenzene and 0.1% 1,2- polybutadiene crosslinking coagents composition；.The main correlated performance of gained backboard is shown in Table 1.
Embodiment 3：
By 150 microns of PET (polyester base film layer), 50 microns of (barrier layer), 15 microns of acrylic resin foamed cements
Layer (foamed cement layer) is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure passes through
The mode of mechanical stamp is fixed on high-obstruction surface, and the logical cured mode of cross-linking radiation carries out solidifying and setting to it, wherein
Titanium dioxide (Du Pont) that filler used is 10%, the ESCALOL 567 that ultraviolet absorber used is 0.05%,
γ-methacryloxypropyl trimethoxy silane that silane coupling agent used is 0.1%, crosslinking agent used are 0.1%
Benzoyl peroxide and 0.1% 1,3,5- triallyls-guanamine, 4,6- triketone crosslinking coagents composition；Gained backboard master
Correlated performance is wanted to be shown in Table 1.
Embodiment 4：
By 150 microns of PET (polyester base film layer), 50 microns of (barrier layer), 15 microns of acrylic resin foamed cements
Layer (foamed cement layer) is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, but not in high-obstruction table
Face makes high reflection layer, the titanium dioxide (Du Pont) that filler used is 10%, the 2- hydroxyls -4- that ultraviolet absorber used is 0.05%
Methoxy benzophenone, γ-methacryloxypropyl trimethoxy silane, used that silane coupling agent used is 0.1%
Crosslinking agent is 0.1% benzoyl peroxide and the 1 of 0.1%, 3,5- triallyls-guanamine, 4,6- triketone crosslinking coagents
Composition；The main correlated performance of gained backboard is shown in Table 1.
Embodiment 5：
50 microns of PET (polyester base film layer), 150 microns of (barrier layer), 15 microns of acrylate resin layers (are bonded
Layer) it is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure passes through mechanical stamp
Mode is fixed on high-obstruction surface, and the logical cured mode of cross-linking radiation carries out solidifying and setting, wherein acrylic resin to it
Titanium dioxide (Du Pont), used ultraviolet absorber 4,4 '-tetrahydroxybenzophenones for 0.05% of the filler used in layer for 10%, institute
Bis- (the tertiary butyl mistakes of 3,3- that the vinyl silane triisopropoxide for being 0.1% with silane coupling agent, crosslinking agent used are 0.1%
Oxygen) ethyl butyrate and 0.1% trimethylolpropane trimethacrylate crosslinking coagent composition；The main correlated performance of gained backboard is shown in
Table 1.
Embodiment 6：
100 microns of PET (polyester base film layer), 100 microns of (barrier layer), 15 microns of acrylate resin layers (are bonded
Layer) it is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure passes through mechanical stamp
Mode is fixed on high-obstruction surface, and the logical cured mode of heat cross-linking carries out solidifying and setting to it.The carbon that filler used is 3%
4,4 '-tetrahydroxybenzophenones that ultraviolet absorber black, used is 0.05%, the vinyl that silane coupling agent used is 0.1%
Three isopropoxy silane, crosslinking agent used are 0.1% bis- (t-butyl peroxy) ethyl butyrates of 3,3- and 0.1% trihydroxy methyl
Propane triacrylate crosslinking coagent forms；The main correlated performance of gained backboard is shown in Table 1.
Embodiment 7：
50 microns of PET (polyester base film layer), 150 microns of (barrier layer), 15 microns of acrylate resin layers (are bonded
Layer) it is combined with each other by way of adhesive layer, curtain coating fitting, showering respectively, while high reflection structure passes through mechanical stamp
Mode is fixed on high-obstruction surface, and the logical cured mode of cross-linking radiation carries out solidifying and setting to it.Filler wherein used is
4% siderochrome is black, and 4,4 '-tetrahydroxybenzophenones that ultraviolet absorber used is 0.05%, silane coupling agent used are 0.1%
Vinyl silane triisopropoxide, 3,3- bis- (t-butyl peroxy) ethyl butyrates and 0.1% that crosslinking agent used is 0.1%
Trimethylolpropane trimethacrylate crosslinking coagent forms；The main correlated performance of gained backboard is shown in Table 1.
Comparative example 1：
Commercially available KPE backboards.
Table 1
It uses as can be seen from the table, photovoltaic backboard using the present invention is in water vapor transmittance and oxygen infiltration system
Number aspect has significant reduction relative to comparative example, illustrates that the barrier property of the solar energy backboard of the present invention is very good, while this
The solar energy backboard of invention has very high emissivity again, illustrates that the backboard of the present invention is compared with common KPF backboards in weather-proof energy
With all increase significantly on generated output, and when high reflection structure and foaming structure collective effect are on backboard its
Reflectivity can also be promoted further, illustrate that two structures all play beneficial effect to the promotion of reflectivity.
Above to be told, only the embodiment of the present invention is not intended to protection scope of the present invention.It is every according in the present invention
Hold done variation to be encompassed by the scope of the claims of the present invention.
Claims (10)
1. a kind of crystalline silicon photovoltaic module high-barrier high reflection back veneer material, which is characterized in that successively by polyester base film layer, high resistant
Interlayer, the multiple high reflection structures for being uniformly distributed in high-obstruction upper surface and foamed cement layer composition.
The high-obstruction is formed by the first matrix resin layer and the second matrix resin layer by double-layer coextrusion.
The first matrix resin layer by mass fraction be 80~90% the first matrix resin, 6~50% inorganic filler,
0.01~1% ultraviolet absorber, 0.01~1% thermo oxidative aging agent, 0.01~2% silane coupling agent, 0~0.1%
Crosslinking agent, 0~0.1% assistant crosslinking agent composition；First matrix resin by ethylene and propylene, butylene, amylene, heptene,
One or more monomers in octene are copolymerized according to arbitrary ratio.
The second matrix resin layer is 70~90% ethylene-vinyl alcohol copolymer, 5~15% high reflection by mass fraction
Filler, 4~20% auxiliary packing, 0.01~1% ultraviolet absorber, 0.01~0.1% thermo oxidative aging agent, 0.01~
2% silane coupling agent, 0~0.1% crosslinking agent, 0~0.1% assistant crosslinking agent composition.
The first matrix resin layer is bonded together by adhesive and polyester base film layer, and the high reflection structure passes through machinery
The mode of stamp is formed on the second matrix resin layer, and passes through heat cure, ultraviolet light solidification, radiation curing or microwave curing etc.
Mode carries out solidifying and setting；The shape of high reflection structure is by positive rectangular pyramid, positive triangular pyramid type, long column type, one kind of circular arc type
Or several mixing compositions；Foamed cement layer is coated in by modes such as spraying, showering or blade coatings on the second matrix resin layer.
2. backboard as described in claim 1, which is characterized in that the adhesive is by adhesive for polyurethane, epoxy resin gluing
One or more of agent, acroleic acid resin adhesive and organic siliconresin adhesive are by arbitrary proportioning mixing composition.
3. backboard as described in claim 1, which is characterized in that the polyester base film layer is by that mass fraction is 70~99%
Three matrix resins, 0~25% inorganic filler, 0.1~10% hydrolysis stabilizer, 0.01~5% thermo oxidative aging agent,
0.1~1% ultraviolet absorber composition；The third matrix resin is by polyethylene terephthalate, poly terephthalic acid
One in butanediol ester, polystyrene, polybutylene naphthalate, (ethylene naphthalate), polymethyl methacrylate
Kind is a variety of according to arbitrary proportioning mixing composition.
4. backboard as described in claim 1, which is characterized in that the foamed cement layer is by that mass fraction is 60~90%
Five matrix resins, 0.1~3% foaming agent, 0~20% inorganic filler, 5~30% curing agent, 0.1~1% catalysis
Agent forms；5th matrix resin is by one kind in epoxy resin, acrylic resin, fluorocarbon resin, organic siliconresin or several
Kind is by arbitrary proportioning mixing composition.
5. backboard as described in claim 1, which is characterized in that the first matrix resin layer thickness is 20~100 μm, described
Second matrix resin layer thickness is 20~100 μm, and the polyester base film layer thickness is 50~200 μm.
6. backboard as described in claim 1, which is characterized in that the matter of vinyl alcohol in the ethylene-vinyl alcohol copolymer resin
It is 50~80% to measure content.
7. backboard as described in claim 1, which is characterized in that the high reflection filler is by titanium dioxide, magnesia, oxidation
Aluminium, barium sulfate, calcium carbonate, carbon black, copper-chrome black, siderochrome be black, the one or several kinds in iron oxide black press arbitrary proportioning mixing group
At the auxiliary packing presses arbitrary proportioning by one or more of nano-titanium dioxide, nano silicon dioxide, nano aluminium oxide
The size of mixing composition, auxiliary packing is 1~10 nanometer.
8. the backboard as described in claim 1 or 3, which is characterized in that the ultraviolet absorber is by 2- hydroxyl -4- methoxyl group hexichol
Ketone, 2- hydroxyl -4-4- methoxyl groups -2 '-carboxyl benzophenone, 6,7 '-di-2-ethylhexylphosphine oxides (2- methyl -4,3,1- benzoxazines) -
4- ketone, 2 ', one in 4,4 '-tetrahydroxybenzophenones, 2- (2 '-hydroxy-5-methyl base phenyl) -5- carboxybutyl ester benzotriazole
Kind is a variety of by arbitrary proportioning mixing composition；The thermo oxidative aging agent by 2,2- methylene-it is bis--(4- methyl-6-terts butyl)
Phenol, 1,3,5- tri- (4- tertiary butyl -3- hydroxyl -2,6- dimethyl benzyls), 3,5- di-t-butyl -4- hydroxy-benzoic acids ten
In six Arrcostabs, distearyl pentaerythritol diphosphite, bisphenol-A bis- (diphenyl phosphoesters) it is one or more according to appoint
Meaning proportioning mixing composition；The silane coupling agent is by 3- triethoxy methyl silicane base -1- propylamine, γ-glycidyl ether oxygen third
Base trimethoxy silane, γ-methacryloxypropyl trimethoxy silane, vinyltrimethoxysilane, vinyl three
('beta '-methoxy ethyoxyl) silane, vinyltriethoxysilane, vinyl silane triisopropoxide, three isopropyl alkene oxygen of vinyl
Base silane, methyl vinyl diethoxysilane, methylvinyldimethoxysilane, divinyl triammonium base propyl trimethoxy
It is one or more by arbitrary proportioning mixing composition in silane；The crosslinking agent is by benzoyl peroxide, peroxidating butyl isopropyl
Bis- (benzoyl the peroxide)-hexanes of benzene, 2,5- dimethyl -2,5-, bis- (t-butyl peroxy) ethyl butyrates of 3,3-, neighbour, o- tertiary fourth
The double methyl-props of the mono- peroxycarbonates of the o- isopropyl-of base-, normal-butyl 4,4- bis- (tert-butyl peroxide) valerate, ethylene glycol
Olefin(e) acid ester, divinylbenzene, trimethyl propane trimethyl acrylic ester, pentaerythritol triacrylate, three propylene of pentaerythrite
Acid esters, tetraethyl silane, N, it is one or more according to arbitrary proportioning mixing composition in N- methylene bisacrylamide acyl ester amines；It is described
Assistant crosslinking agent is by 1,3,5- triallyls-guanamine, 4,6- triketones, N, N '-phenyl-bismaleimide, trihydroxy methyl third
Alkane triacrylate, 1,2- polybutadiene, triallyl isocyanate, triallyl isocyanate, diallyl phthalic acid
It is one or more according to arbitrary proportioning mixing composition in ester, triallyl cyanurate, triallyl isocyanurate.Hydrolysis
Stabilizer is hydrolyzed by monomer Carbodiimides hydrolysis stabilizer, oxazoline compounds hydrolysis stabilizer, epoxy compound species
Composition is mixed by any ratio in one or more in stabilizer.
9. the backboard as described in claim 1,3 or 4, which is characterized in that the inorganic filler by titanium dioxide, bloom barium sulfate,
It is one or more by the mixing of arbitrary proportioning in blanc fixe, calcium carbonate, mica powder, metal oxide, zeolite, glass microballoon
Composition.
10. backboard as claimed in claim 4, which is characterized in that the foaming agent is by AN analog copolymers foam microspheres, acrylic acid
Analog copolymer foam microspheres, polystyrene copolymer foam microspheres, supercritical carbon dioxide, azodicarbonamide, 2,2- azos
Bis-isobutyronitrile, diisopropyl azodiformate, benzene sulfonyl hydrazide, 3, one or more of 3 '-disulfonyl hydrazide diphenyl sulphone (DPS)s are by arbitrary
Proportioning mixing composition.The curing agent be ethylenediamine, second two support triamine, isophorone diamine, bis- (4- amidos cyclohexyl) methane,
It is one or more by the mixing of arbitrary proportioning in hexamethylene diisocyanate trimer, isoflurane chalcone diisocyanate tripolymer
Composition；The catalyst by butyl titanate, cobalt iso-octoate, monobutyltin oxide, dibutyl tin laurate one kind or
It is a variety of to be formed according to arbitrary proportioning mixing.
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| CN110931585A (en) * | 2019-12-03 | 2020-03-27 | 苏州福斯特光伏材料有限公司 | Crystalline silicon photovoltaic module backboard and preparation method thereof |
| CN111334200A (en) * | 2020-04-14 | 2020-06-26 | 杭州福斯特应用材料股份有限公司 | Packaging adhesive film and preparation method thereof |
| CN112242454A (en) * | 2020-10-14 | 2021-01-19 | 晶科能源科技（海宁）有限公司 | Encapsulating material and photovoltaic module |
| CN113004820A (en) * | 2021-05-08 | 2021-06-22 | 苏州赛伯林光电科技有限公司 | Insulating film |
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| CN105609575A (en) * | 2015-12-31 | 2016-05-25 | 杭州福斯特光伏材料股份有限公司 | High-reflectivity backplate material of photovoltaic module |
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| CN101768304A (en) * | 2008-12-29 | 2010-07-07 | 财团法人工业技术研究院 | Packaging material, silicon solar photoelectric module and film solar photoelectric module |
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| CN110931585A (en) * | 2019-12-03 | 2020-03-27 | 苏州福斯特光伏材料有限公司 | Crystalline silicon photovoltaic module backboard and preparation method thereof |
| CN111334200A (en) * | 2020-04-14 | 2020-06-26 | 杭州福斯特应用材料股份有限公司 | Packaging adhesive film and preparation method thereof |
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| CN112242454A (en) * | 2020-10-14 | 2021-01-19 | 晶科能源科技（海宁）有限公司 | Encapsulating material and photovoltaic module |
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Application publication date: 20180907 |