CN108502885B - Preparation method of silicon carbide nanowires - Google Patents
Preparation method of silicon carbide nanowires Download PDFInfo
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- CN108502885B CN108502885B CN201810325080.6A CN201810325080A CN108502885B CN 108502885 B CN108502885 B CN 108502885B CN 201810325080 A CN201810325080 A CN 201810325080A CN 108502885 B CN108502885 B CN 108502885B
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- C01B32/00—Carbon; Compounds thereof
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Abstract
The invention relates to a preparation method of a silicon carbide nanowire, which comprises the steps of coating dopamine on the surface of silicon dioxide to form a coating layer, and controlling the feeding mass ratio of the dopamine to the silicon dioxide to be 1: 2-30; mixing the silicon dioxide and the graphite with the coating layer, calcining at a first temperature to convert dopamine into carbon, wherein the first temperature is more than or equal to 700 ℃ and less than or equal to 1250 ℃, and then calcining at a second temperature to perform carbothermic reduction reaction, thereby preparing the silicon carbide nanowire, wherein the second temperature is more than or equal to 1300 ℃ and less than 2000 ℃. The preparation method of the invention does not need to use a metal catalyst, thereby avoiding metal pollution in the silicon carbide nanowire product; the silicon carbide nanowires prepared by the method have uniform appearance, and can realize mass production of 1 KG/furnace; the method has the advantages of simple process, cheap and easily obtained raw materials and low requirement on equipment, thereby ensuring that the production cost is lower.
Description
Technical Field
The invention relates to a preparation method of a silicon carbide nanowire.
Background
The silicon carbide nanowire as a semiconductor material is a high-purity single crystal material with a radial dimension of less than 100nm and a length dimension much higher than the radial dimension, and has a high melting point (>2700 ℃), a low density, and excellent chemical stability and mechanical properties. Mechanical property tests of the prepared SiC nanowires are carried out by Lieber research group of Harvard university by using an atomic force microscope, and the Young modulus of a single SiC nanowire is 610-660GPa, and the maximum bending strength of the SiC nanowire is 53.4GPa which is 10 times that of carbon fiber. Due to the excellent mechanical properties of high strength, high hardness and the like, the silicon carbide nanowires are widely used as a reinforced phase material in composite materials. The silicon carbide nanowires with appropriate content are introduced into the composite material, so that the strength, the fracture toughness and the like of the composite material are expected to be improved, and the composite material has a wide application prospect. The unique electronic structure and electronic transmission characteristics of the silicon carbide one-dimensional nano material enable the silicon carbide one-dimensional nano material to have unique optical and electrical properties, and the silicon carbide one-dimensional nano material serving as a basic construction unit of a nano electronic device can break through the physical limit in the traditional microelectronics and has great application value in the aspect of constructing a new generation of electronic nano device.
The current methods for preparing silicon carbide nanowires mainly include a carbon nanotube template growth method, a carbothermic reduction method, a laser ablation method, an arc discharge method, a flow catalyst method and a method for pyrolyzing organic precursors.
In the existing preparation method, the invention patent of a method for preparing nano silicon carbide whiskers (patent application number: CN201410110623) takes graphene and silicon powder as raw materials, and the preparation method comprises the steps of calcining, pickling, centrifugal drying and the like.
The invention discloses a preparation method of silicon carbide nano crystal whiskers (patent application number: CN201510730287), which is prepared by filtering, distilling, treating in a reaction kettle, carbonizing, grinding, mechanically pressing into a mold, demolding and calcining organic silicon and asphalt serving as raw materials.
At present, a plurality of methods for preparing the silicon carbide nanowires exist, but all have the following defects: 1) the existence of a metal catalyst is required, so that the silicon carbide nanowire product is polluted by metal; 2) the yield of the silicon carbide nanowire growth is very low and is basically a product below gram; 3) the preparation process is complex, the preparation period is long, and the preparation process has strict requirements on raw materials, equipment and processes, is difficult to operate and has high cost.
Disclosure of Invention
The invention aims to provide a preparation method of kilogram-level silicon carbide nanowires, which can reduce metal pollution without using a metal catalyst under the condition of ensuring the product quality.
In order to solve the technical problems, the invention adopts the following technical scheme:
one object of the present invention is to provide a method for preparing silicon carbide nanowires, comprising the steps of:
coating dopamine on the surface of silicon dioxide to form a coating layer, and controlling the feeding mass ratio of the dopamine to the silicon dioxide to be 1: 2-30;
and (2) mixing the silicon dioxide and the graphite which are prepared in the step (1) and are provided with the coating layers, calcining at a first temperature to convert dopamine into carbon, wherein the first temperature is more than or equal to 700 ℃ and less than or equal to 1250 ℃, and then calcining at a second temperature to perform carbothermic reduction reaction, so that the silicon carbide nanowires are prepared, wherein the second temperature is more than or equal to 1300 ℃ and less than 2000 ℃.
The coating layer in the present invention means that at least 50% or more of the area of the surface of silica is coated with dopamine, preferably 60% or more, more preferably 70% or more, still more preferably 80% or more, more preferably 90% or more, and most preferably 100%.
According to the preparation method, the dopamine is coated on the surface of the silicon dioxide to form a coating layer, then the coating layer is mixed with graphite and then is subjected to low-temperature calcination, so that the coating layer of the dopamine is converted into an amorphous carbon layer, and during high-temperature calcination, the amorphous carbon layer formed by the dopamine can play a role of a catalyst, so that a carbothermic reduction reaction occurs, and therefore, the silicon carbide nanowire can be prepared without using a metal catalyst, and the silicon carbide nanowire is uniform in shape.
In addition, the dopamine is coated on the surface of the silicon dioxide to form an amorphous carbon layer to promote the generation of the silicon carbide nanowire, so that the problem of incomplete growth of the silicon carbide nanowire due to uneven distribution of the catalyst and reaction raw materials does not exist during amplification production. According to the invention, as long as the dopamine is well coated on the surface of the silicon dioxide, the large-scale production can be realized by further controlling the calcination temperature, so that the mass production of the silicon carbide nanowires can be realized.
In the invention, the feeding mass ratio of dopamine to silicon dioxide is more critical, and if the feeding mass ratio of dopamine to silicon dioxide is too small, the dopamine on the silicon dioxide is coated too little, so that the silicon carbide nanowires cannot grow stably and uniformly; if the feeding mass ratio of dopamine to silicon dioxide is too large, strong self-polymerization reaction occurs, so that silicon carbide nanowires cannot grow.
Preferably, the feeding mass ratio of the dopamine to the silicon dioxide is controlled to be 1: 5-20, and further preferably 1: 6-18.
In the present invention, there are various methods for coating dopamine on the surface of silica, and the following methods are preferably used: dissolving the silicon dioxide in dopamine aqueous solution to form suspension, dispersing, standing, and centrifugally drying to form the dopamine-coated silicon dioxide. The method is simple and easy to implement, and the dopamine is uniformly and compactly coated on the surface of the silicon dioxide, so that an amorphous carbon layer formed by low-temperature calcination is compact, and the carbothermic reduction reaction is more favorably realized.
More preferably, the concentration of the dopamine aqueous solution is 0.2 mg/mL-2 mg/mL.
Further preferably, the suspension is subjected to ultrasonic dispersion for 0.5-1.5 hours, then is kept stand for 4-6 hours, and then is subjected to centrifugal drying.
Preferably, the silica is fumed silica.
Preferably, the particle size of the silicon dioxide is 8-30 nm.
In the invention, the first temperature is also more critical, and if the first temperature is too low, dopamine cannot be converted into carbon; if the first temperature is too high, carbothermic reduction has already occurred when dopamine has not been sufficiently converted to carbon. Therefore, the first temperature is too low or too high, which is not favorable for converting dopamine into carbon, and is further unfavorable for the generation of silicon carbide nanowires.
Further preferably, the first temperature is 700-800 ℃, so that energy consumption is saved when dopamine is converted into carbon.
Preferably, the temperature is increased at a temperature increasing speed of 5-10 ℃/min, so that the dopamine is more favorably converted into the compact amorphous carbon.
Preferably, the calcination time at the first temperature is controlled to be 1-2 hours, so that the dopamine is more favorably and completely converted into compact amorphous carbon.
In the invention, the second temperature is also more critical, and if the second temperature is too low, the carbothermic reduction reaction cannot be carried out; if the second temperature is too high, the generated product is a silicon block, and the silicon carbide nanowire cannot be obtained.
Further preferably, the second temperature is 1300-1600 ℃, and at this time, the generated silicon carbide nanowire is alpha-type.
In addition, the diameter of the silicon carbide nanowire can be controlled by controlling the second temperature, when the second temperature is 1300-1600 ℃, the diameter of the silicon carbide nanowire is 20-80 nm, and the diameter of the silicon carbide nanowire is larger when the second temperature is higher.
Preferably, the temperature is controlled to rise to the second temperature at a temperature rise rate of 5-10 ℃/min, so that the quality of the generated silicon carbide nanowires is better.
Preferably, the calcination time at the second temperature is controlled to be 1-4 h, so that the silica reaction is more sufficient.
Preferably, in step (2), the calcination is performed under the protection of an inert atmosphere, so that the formation of byproducts can be better avoided.
Preferably, after the calcination is finished, the temperature is reduced to 500-700 ℃, the inert atmosphere is closed, and air is introduced for cooling to prepare the silicon carbide nanowire, so that unreacted carbon is oxidized into carbon dioxide to be discharged, and the purity of the silicon carbide nanowire is further improved.
In the invention, the air is introduced to react with excessive carbon and graphite to generate carbon dioxide so as to improve the purity of the silicon carbide nanowire, and the temperature reduction is convenient for storing the silicon carbide nanowire, so the effect of the temperature reduction is less influenced or even has no influence.
Further preferably, the temperature is reduced to 500-700 ℃ at a cooling rate of 3-5 ℃/min.
In the present invention, there are various methods for mixing the dopamine coating layer-coated silica and graphite, and the following methods are preferably used: in the step (2), the mixing method of the dopamine-coated silicon dioxide and the graphite is solid phase oscillation for 0.2-1 h.
There are various apparatuses capable of performing the reaction of the present invention, and preferably, the mixed dopamine-coated silica and graphite are reacted in a tube furnace to prepare the silicon carbide nanowires, thereby facilitating the mass production of the silicon carbide nanowires.
Preferably, the feeding mass ratio of the silicon dioxide to the graphite is controlled to be 0.2-5: 1.
Preferably, the graphite is one or more of natural graphite, artificial graphite and flake graphite.
Preferably, the inert atmosphere is one or more of nitrogen, argon and helium.
Due to the implementation of the technical scheme, compared with the prior art, the invention has the following advantages:
the preparation method of the invention does not need to use a metal catalyst, thereby avoiding metal pollution in the silicon carbide nanowire product; the silicon carbide nanowires prepared by the method have uniform appearance, and can realize mass production of 1 KG/furnace; the method has the advantages of simple process, cheap and easily obtained raw materials and low requirement on equipment, thereby ensuring that the production cost is lower.
Furthermore, the diameter of the silicon carbide nanowire prepared by the preparation method is controllable, and the requirements of different customers can be met.
Drawings
FIG. 1 is an XRD pattern of silicon carbide nanowires prepared in example 1;
FIG. 2 is a lens diagram of the silicon carbide nanowires prepared in example 1;
FIG. 3 is an electron micrograph showing that comparative example 1 shows no reaction between silica and graphite;
FIG. 4 is an electron micrograph of a silicon carbide nanowire prepared in comparative example 3;
FIG. 5 is an electron micrograph of silicon carbide prepared in comparative example 4;
FIG. 6 is an electron micrograph showing that comparative example 5 shows no reaction of silica with graphite.
Detailed Description
The present invention will be described in further detail with reference to specific examples. It is to be understood that these embodiments are provided to illustrate the basic principles, essential features and advantages of the present invention, and the present invention is not limited by the following embodiments. The implementation conditions used in the examples can be further adjusted according to specific requirements, and the implementation conditions not indicated are generally the conditions in routine experiments. Not indicated, "%" is mass percent. The raw materials in the invention are all available in the market.
Example 1
2kg fumed silica (Cabot M5) was dissolved in 550L 0.2mg/mL dopamine aqueous solution to form a suspension, ultrasonically dispersed for 1h, allowed to stand for 5h, and centrifugally dried. Mixing the dopamine-coated fumed silica with a natural graphite solid phase, wherein the mass ratio is as follows: SiO22Mix the solid phase with shaking for 0.5h when C is 1: 5. Putting the silicon carbide nanowire into a corundum boat, putting the silicon carbide nanowire into a tube furnace, calcining at a first temperature (700 ℃ and keeping the temperature for 1h) and calcining at a second temperature (1350 ℃ and keeping the temperature for 2h) under the protection of argon, keeping the temperature at a rate of 3 ℃/min, closing inert atmosphere when the temperature is reduced to 500 ℃, and introducing air until the temperature is reduced to room temperature to prepare 1.23kg of silicon carbide nanowires with the diameter of 20nm and uniform appearance, wherein an XRD (X-ray diffraction) diagram of the silicon carbide nanowires prepared in the embodiment is shown in figure 1, and as can be seen from figure 1, the silicon carbide nanowires prepared in the embodiment are alpha-type silicon carbide nanowires; lens view of the silicon carbide nanowires prepared in this example referring to fig. 2, it can be seen from fig. 2 that the silicon carbide nanowires prepared in this example are linear, and the diameter of the plurality of silicon carbide nanowires and the diameter of each silicon carbide nanowire in the length direction are substantially the same.
Example 2
2kg fumed silica (Cabot M5) was dissolved in 250L 0.8mg/mL dopamine aqueous solution to form a suspension, ultrasonically dispersed for 1h, allowed to stand for 5h, and centrifugally dried. Mixing the dopamine-coated fumed silica with an artificial graphite solid phase, wherein the mass ratio is as follows: SiO22Mix the solid phase with shaking for 0.5h when C is 1: 5. Putting the mixture into a corundum boat, putting the corundum boat into a tubular furnace, calcining at a first temperature (800 ℃ and keeping the temperature for 1h) and at a second temperature (1400 ℃ and keeping the temperature for 2h) under the protection of argon, keeping the temperature at 3 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, introducing air until the temperature is reduced to room temperature, and preparing 1.18kg of alpha-type silicon carbide nanowires with the diameter of 30nm and uniform appearance.
Example 3
2kg fumed silica (Cabot M5) was dissolved in 300L 1mg/mL dopamine aqueous solution to form a suspension, dispersed by ultrasound for 1h, left to stand for 5h, and dried by centrifugation. Solid phase mixing of dopamine-coated fumed silica and artificial graphiteAnd the mass ratio is as follows: SiO22C is 2.5:1, and the solid phase is shaken and mixed for 0.5 h. Putting the mixture into a corundum boat, putting the corundum boat into a tubular furnace, calcining at a first temperature (800 ℃ and keeping the temperature for 2 hours) and at a second temperature (1500 ℃ and keeping the temperature for 2 hours), calcining at the first temperature, cooling at a rate of 3 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, introducing air until the temperature is reduced to room temperature, and preparing 1.20kg of alpha-type silicon carbide nanowires with the diameter of 65nm and uniform appearance.
Example 4
2kg fumed silica (Cabot M5) was dissolved in 400L aqueous dopamine solution of 2mg/mL to form a suspension, dispersed by ultrasound for 1h, allowed to stand for 5h, and dried by centrifugation. Mixing the dopamine-coated fumed silica with crystalline flake graphite in a solid phase manner, wherein the mass ratio is as follows: SiO22C is 2.5:1, and the solid phase is shaken and mixed for 0.5 h. Putting the mixture into a corundum boat, putting the corundum boat into a tubular furnace, calcining at a first temperature (800 ℃ and keeping the temperature for 2 hours) and at a second temperature (1600 ℃ and keeping the temperature for 2 hours) under the protection of argon, cooling at a rate of 3 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, introducing air until the temperature is reduced to room temperature, and preparing 1.15kg of alpha-type silicon carbide nanowires with the diameter of 80nm and uniform appearance.
Example 5
2kg fumed silica (Cabot M5) was dissolved in 67L 1mg/mL dopamine aqueous solution to form a suspension, ultrasonically dispersed for 0.5h, left to stand for 4h, and centrifugally dried. Mixing the dopamine-coated fumed silica with an artificial graphite solid phase, wherein the mass ratio is as follows: SiO22When C is 5:1, the solid phase is shaken and mixed for 0.2 h. Putting the mixture into a corundum boat, putting the corundum boat into a tube furnace, calcining at a first temperature (1250 ℃, and keeping the temperature for 2 hours) and calcining at a second temperature (1950 ℃, and keeping the temperature for 1 hour), wherein the heating rate is 10 ℃/min, the temperature is reduced to 700 ℃, closing inert atmosphere, introducing air until the temperature is reduced to room temperature, and preparing 1.16kg of beta-type silicon carbide nanowires with the diameter of 65nm and uniform appearance.
Example 6
Dissolving 2kg fumed silica (Kabot M5) in 500L 2mg/mL dopamine aqueous solution to form suspension, ultrasonically dispersing for 1.5h, and standingStanding for 6h, and centrifuging and drying. Mixing the dopamine-coated fumed silica with crystalline flake graphite in a solid phase manner, wherein the mass ratio is as follows: SiO22C is 2.5:1, and the solid phase is mixed for 1 hour with shaking. Putting the mixture into a corundum boat, putting the corundum boat into a tubular furnace, calcining at a first temperature (800 ℃ and keeping the temperature for 2 hours) and at a second temperature (1300 ℃ and keeping the temperature for 4 hours) under the protection of argon, cooling at a rate of 5 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, introducing air until the temperature is reduced to room temperature, and preparing 1.13kg of alpha-type silicon carbide nanowires with the diameter of 80nm and uniform appearance.
Comparative example 1
2kg of fumed silica (Kabot M5) is dissolved in 5kg of 5% asphalt solution to form suspension, ultrasonic dispersion is carried out for 4 hours, and the suspension is put into an oven for drying and ball milling and crushing. Mixing with artificial graphite solid phase, wherein the mass ratio is as follows: SiO2 (2.5: 1) and shaking and mixing the solid phase for 0.5 h. Putting the mixture into a corundum boat, putting the corundum boat into a tube furnace, calcining the mixture under the protection of argon at the heating rate of 8 ℃/min at a first temperature (800 ℃, and keeping the temperature for 2h), calcining the mixture at a second temperature (1600 ℃, and keeping the temperature for 2h), cooling the mixture at the cooling rate of 3 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, and introducing air until the temperature is reduced to room temperature, so that the silicon carbide nanowire cannot be obtained. The electron microscope spectrum and XRD spectrum show that no reaction occurs between silicon dioxide and graphite, and the electron microscope spectrum is shown in figure 3.
Comparative example 2
2kg of fumed silica (Kabot M5) is dissolved in 5kg of 10% polyvinyl alcohol solution to form suspension, ultrasonic dispersion is carried out for 4h, and the suspension is placed into an oven for drying and ball milling and crushing. Mixing with artificial graphite solid phase, wherein the mass ratio is as follows: SiO2 and C are mixed in a ratio of 1:5 for 0.5h with shaking. Putting the mixture into a corundum boat, putting the corundum boat into a tube furnace, calcining the mixture under the protection of argon at the heating rate of 8 ℃/min at a first temperature (800 ℃, and keeping the temperature for 2h), calcining the mixture at a second temperature (1600 ℃, and keeping the temperature for 2h), cooling the mixture at the cooling rate of 3 ℃/min, closing inert atmosphere when the temperature is reduced to 600 ℃, and introducing air until the temperature is reduced to room temperature, so that the silicon carbide nanowire cannot be obtained. And the electron microscope spectrum and the XRD spectrum show that the silicon dioxide and the graphite do not react.
Comparative example 3
2kg of fumed silica (Cabot M5) were dissolved in 25Forming suspension in 0L 0.8mg/mL dopamine aqueous solution, ultrasonically dispersing for 1h, standing for 5h, and centrifugally drying. Mixing the dopamine-coated fumed silica with an artificial graphite solid phase, wherein the mass ratio is as follows: SiO22Mix the solid phase with shaking for 0.5h when C is 1: 5. Putting the silicon carbide into a corundum boat, putting the corundum boat into a tube furnace, calcining at a first temperature (600 ℃ and keeping the temperature for 1h) and calcining at a second temperature (1400 ℃ and keeping the temperature for 2h) under the protection of argon, wherein the temperature rising rate is 5 ℃/min, the temperature reduction rate is 3 ℃/min, when the temperature is reduced to 600 ℃, closing the inert atmosphere, introducing air until the temperature is reduced to the room temperature, and preparing to obtain 1.2kg of silicon carbide nanowires. The electron microscope picture of the silicon carbide nanowire prepared by the comparative example is shown in figure 4, and as can be seen from figure 4, the thickness of the silicon carbide nanowire is not uniform, and the thickest diameter can reach 120 nm.
Comparative example 4
2kg fumed silica (Cabot M5) was dissolved in 250L 0.8mg/mL dopamine aqueous solution to form a suspension, ultrasonically dispersed for 1h, allowed to stand for 5h, and centrifugally dried. Mixing the dopamine-coated fumed silica with an artificial graphite solid phase, wherein the mass ratio is as follows: SiO22Mix the solid phase with shaking for 0.5h when C is 1: 5. Putting the corundum boat into a tube furnace for calcination, under the protection of argon, heating at a rate of 5 ℃/min, calcining at a high temperature (1400 ℃, keeping the temperature for 2 hours), cooling at a rate of 3 ℃/min, closing the inert atmosphere when the temperature is reduced to 600 ℃, and introducing air until the temperature is reduced to room temperature to prepare 1.0kg of silicon carbide. The electron micrograph of the silicon carbide nanowires obtained in this comparative example is shown in FIG. 5, and it can be seen from FIG. 5 that there are many nodules and crystal inclusions and no linear silicon carbide is formed.
Comparative example 5
2kg fumed silica (Cabot M5) was dissolved in 250L 0.8mg/mL dopamine aqueous solution to form a suspension, ultrasonically dispersed for 1h, allowed to stand for 5h, and centrifugally dried. Mixing the dopamine-coated fumed silica with an artificial graphite solid phase, wherein the mass ratio is as follows: SiO22Mix the solid phase with shaking for 0.5h when C is 1: 5. Putting into corundum boat, calcining in a tube furnace under the protection of argon at a heating rate of 5 ℃/min at a first temperature (800 ℃ for 1h), calcining at a second temperature (1250 ℃ for 2h), cooling at a rate of 3 ℃/min, and turning off inert gas when the temperature is reduced to 600 DEG CAnd introducing air until the temperature is reduced to room temperature under the atmosphere, so that the silicon carbide nanowire cannot be prepared. An electron micrograph of this comparative example is shown in FIG. 6.
Claims (10)
1. A preparation method of silicon carbide nanowires is characterized by comprising the following steps: the method comprises the following steps:
coating dopamine on the surface of silicon dioxide to form a coating layer, and controlling the feeding mass ratio of the dopamine to the silicon dioxide to be 1: 2-30;
and (2) mixing the silicon dioxide and the graphite which are prepared in the step (1) and are provided with the coating layers, calcining at a first temperature to convert dopamine into carbon, wherein the first temperature is more than or equal to 700 ℃ and less than or equal to 1250 ℃, and then calcining at a second temperature to perform carbothermic reduction reaction, so that the silicon carbide nanowires are prepared, wherein the second temperature is more than or equal to 1300 ℃ and less than 2000 ℃.
2. The method for producing silicon carbide nanowires according to claim 1, characterized in that: the specific implementation mode of the step (1) is as follows: dissolving the silicon dioxide in a dopamine aqueous solution to form a suspension, dispersing, standing, and centrifugally drying to form the dopamine-coated silicon dioxide.
3. The method for producing silicon carbide nanowires according to claim 2, characterized in that: the concentration of the dopamine aqueous solution is 0.2 mg/mL-2 mg/mL.
4. The method for producing silicon carbide nanowires according to claim 2, characterized in that: and ultrasonically dispersing the suspension for 0.5-1.5 h, standing for 4-6 h, and then carrying out centrifugal drying.
5. The method for producing silicon carbide nanowires according to claim 1, characterized in that: the first temperature is 700-800 ℃, and the second temperature is 1300-1600 ℃.
6. The method for producing silicon carbide nanowires according to claim 1 or 5, characterized in that: and controlling the temperature to rise to the first temperature at a temperature rise speed of 5-10 ℃/min, and controlling the temperature to rise to the second temperature at a temperature rise speed of 5-10 ℃/min.
7. The method for producing silicon carbide nanowires according to claim 1 or 5, characterized in that: controlling the calcination time at the first temperature to be 1-2 h; and controlling the calcination time at the second temperature to be 1-4 h.
8. The method for producing silicon carbide nanowires according to claim 1, characterized in that: in the step (2), the calcination is carried out under the protection of inert atmosphere.
9. The method for producing silicon carbide nanowires according to claim 8, characterized in that: and after the calcination is finished, cooling to 500-700 ℃, closing the inert atmosphere, and introducing air to cool to obtain the silicon carbide nanowire.
10. The method for producing silicon carbide nanowires according to claim 1, characterized in that: and reacting the mixed dopamine-coated silicon dioxide and graphite in a tubular furnace to prepare the silicon carbide nanowire, wherein the feeding mass ratio of the silicon dioxide to the graphite is controlled to be 0.2-5: 1.
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