CN108493770A - A kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source - Google Patents
A kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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Abstract
The invention discloses the emulation mode that a kind of electric pump Bragg reflection waveguide is associated with photon pair source, the emulation mode includes the following steps：The Bragg reflection waveguiding structure of transfer process under quantum well region structure, Spontaneous Parametric is designed, the electrical injection laser collectively constituted by 2 kinds of structures is obtained；The phase matched tuning curve of transfer process under Spontaneous Parametric is calculated according to Bragg reflection waveguiding structure, fine tuning structure parameter makes the position of the degeneracy pumping wavelength near Quantum Well peak gain wavelength；The power density spectrum of transfer process under the Injection Current of electrical injection laser and the relation curve of internal luminous power, Bragg waveguide Spontaneous Parametric is calculated by the Bragg reflection waveguiding structure after finely tuning, and then determines association photon to generation efficiency.The present invention is realized carries out systematically theory analysis to the characteristic of electrical pumping association photon pair source, meets a variety of needs in practical application.
Description
Technical field
The present invention relates to integrated quantum optices fields more particularly to a kind of electric pump Bragg reflection waveguide to be associated with photon pair
The emulation mode in source.
Background technology
Association photon pair source is the valuable source in quantum optices information processing, has been widely used for quantum key point
Match, quantum teleportation, quantum imaging and quantum storage etc. fields.
Photon is associated with to there are two kinds of generation mechanisms of optical pumping and electric pump.The principle that optical pumping generates association photon pair is advantageous
With two kinds of the second-order optical nonlinearity effect and third order optical nonlinearity effect of nonlinear crystal, be not suitable for integrated extensive raw
Production.Electric pump association photon pair source has quantum dot biexction radiation-emitting semiconductor diode and Bragg reflection waveguide are integrated to be associated with photon pair
Source.Wherein, electric pump Bragg reflection waveguide association photon pair source is to utilize the gain characteristic of quantum-well materials and non-thread simultaneously
Property characteristic, the Bragg reflection waveguide converted under integrated quantum-well laser and Spontaneous Parametric is integrated, and generates association photon pair.
For association photon to the non-linear process of generation, under Spontaneous Parametric conversion be considered as most efficient method it
One, this process realizes pump light (λ using the second order nonlinear effect of materialp) under conditions of meeting II type-Ⅱphase matching,
Signal light (the λ of TE (transverse electric) polarizations is generated simultaneouslys) and TM (horizontal magnetic) polarization ideler frequency light (λi).Semiconductor is to realize integrated system
The ideal material of system, and the semi-conducting materials such as AlGaAs, GaInP have higher second order nonlinear coefficient, and this is electrical pumping
The large-scale integrated of association photon pair source provides material foundation.
2014, French Sara Ducci research groups realized electrical pumping in Prague using AlGaAs material systems and produce
Association photon pair source near raw 1.55 mum wavelengths.But this electric pump Bragg reflection waveguide association photon pair source exists
Threshold current is high, electrical pumping generates the problems such as photon is low to efficiency, directly affects the application of electric pump association photon pair source.
In conclusion the task of top priority is to establish a set of emulation for being associated with photon pair source about electric pump Bragg reflection waveguide
Method to these problem systems is analyzed, and the characteristic of association photon pair source is further improved.
Invention content
The present invention provides the emulation mode that a kind of electric pump Bragg reflection waveguide is associated with photon pair source, the present invention realizes
The characteristic that photon pair source is associated with to electrical pumping carries out systematically theory analysis, meets a variety of needs in practical application, in detail
See below description：
A kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source, the emulation mode includes following step
Suddenly：
The Bragg reflection waveguiding structure of transfer process under quantum well region structure, Spontaneous Parametric is designed, obtains and is tied by 2 kinds
The electrical injection laser that structure collectively constitutes；
The phase matched tuning curve of transfer process under Spontaneous Parametric, fine tuning knot are calculated according to Bragg reflection waveguiding structure
Structure parameter makes the position of the degeneracy pumping wavelength near Quantum Well peak gain wavelength；
By the Bragg reflection waveguiding structure after finely tuning calculate electrical injection laser Injection Current, with internal luminous power
The power density spectrum of transfer process under relation curve, Bragg waveguide Spontaneous Parametric, and then determine association photon to generation efficiency.
The electrical injection laser includes：
Lower electrode, N-type substrate, N-type Bragg waveguide layer, single quantum well or multiple quantum well layer, p-type etching barrier layer, P
Type Bragg waveguide layer, p-type protective layer and top electrode.
The design quantum well region structure is specially：
The material that second order nonlinear coefficient is more than a certain threshold value is selected as quantum well region material, determine well region thickness,
Quantum Well and the material component built, while determining the substrate material of counter structure；It is big to calculate the well depth of Quantum Well under stress
It is small；
Calculate z directions electronics, hole discrete energy levels and wave function；X is calculated, the directions y consider the hole with melange effect
Band structure；
According to taking under hole bands Structure Calculation valence band state density, transition moment matrix element and given carrier concentration
Rice energy level；
The linear gain coefficient of Quantum Well is calculated, and finds the wavelength location of peak gain.
The Bragg reflection waveguiding structure of transfer process is specially under the design Spontaneous Parametric：
According to the material of waveguide core layer thickness and material selection Bragg waveguide reflecting layer, and designs and meet 1/4 wavelength cloth
The Bragg reflection layer thickness of the condition of glug waveguide；
Structural model is established in COMSOL softwares according to Prague sandwich layer and reflector thickness, solves different pumping wavelengths
With the effective refractive index of converted wave strong point under Spontaneous Parametric, the dispersion characteristics of structural model are obtained；
By dispersion characteristics and II type-Ⅱphase matching condition, the pump that the structural model may be implemented to convert under Spontaneous Parametric is solved
Pu optical wavelength and lower converting light wavelength, obtain phase matched tuning curve.
The waveguide core layer thickness is specially：
To design the corresponding wavelength of peak gain that quantum well region obtains as the pumping wavelength converted under Spontaneous Parametric,
Waveguide core layer thickness is calculated according to pumping wavelength.
The degeneracy pumping wavelength is specially：
So that signal light λ in being converted under Spontaneous ParametricsWith ideler frequency light λiWavelength there was only the pump wavelength of one group of solution.
The advantageous effect of technical solution provided by the invention is：
1, the integrated association photon pair source of the Bragg reflection waveguide for the electric pump that the present invention chooses, is utilized semi-conducting material
High second nonlinear characteristic, may be implemented association photon pair source large-scale integrated；
It 2, can be with the Its Gain Property of analyzing and associating photon pair source and spontaneous ginseng using emulation mode proposed by the present invention
The lower transfer efficiency of amount；
3, the present invention generates association photon pair source for design electric pump Bragg waveguide and provides theoretical foundation, can pass through
Systematically theory analysis improves the association photon generated to characteristic.
Description of the drawings
Fig. 1 is the flow chart that electric pump Bragg reflection waveguide is associated with photon pair source emulation mode；
Fig. 2 is the structural schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Fig. 3 is that electric pump Bragg reflection waveguide is associated with the z of photon pair source to energy level schematic diagram；
Fig. 4 is the conduction band electron wave function schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Fig. 5 is the heavy hole wave function schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Fig. 6 is the light hole wave function schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Fig. 7 is the directions the xy hole bands structure (E-k that electric pump Bragg reflection waveguide is associated with photon pair sourcexy) signal
Figure；
Fig. 8 is the hole state density schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Fig. 9 is the first energy of the first energy level of conduction band (C1) and heavy hole that electric pump Bragg reflection waveguide is associated with photon pair source
Transition moment matrix element schematic diagram between grade (HH1)；
Figure 10 is the linear gain schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Figure 11 is the dispersion characteristics schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Figure 12 is the phase matched tuning curve schematic diagram that electric pump Bragg reflection waveguide is associated with photon pair source；
Figure 13 is the relation curve that electric pump Bragg reflection waveguide is associated with photon pair source Injection Current and internal luminous power
Schematic diagram (intrinsic loss αi=20cm-1, the injection efficiency η of carrieriRespectively 20%, 30% and 40%)；
Figure 14 is that electric pump Bragg reflection waveguide is associated with photon to the power density spectrum from hair parametric down conversion process
Schematic diagram；
Figure 15 is that the association photon of electric pump Bragg reflection waveguide association photon pair source is (intrinsic to generation efficiency schematic diagram
α is losti=20cm-1, the injection efficiency η of carrieriRespectively 20%, 30% and 40%).
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is made below further
It is described in detail on ground.
An embodiment of the present invention provides the emulation modes that a kind of electric pump Bragg reflection waveguide is associated with photon pair source, are collection
At the association photon pair source of quantum-well laser and Bragg reflection waveguide.Pump light and lower conversion optical mode are adopted in this waveguide
With different light limitations and light Guidance-Mechanism, to realize II type-Ⅱphase matching under Spontaneous Parametric in transfer process：Pumping laser
For bragg mode (TEB transverse electrics bragg mode), is limited and is guided using the Bragg reflecting layer of quantum well region both sides,
Make pumping laser pattern major limitation in Quantum Well, the then rapid decay in Bragg reflecting layer；It is generated under Spontaneous Parametric
Signal light (λs) and ideler frequency light (λi) it is to polarize the mutually perpendicular emission mode that is all-trans, respectively TE (transverse electric) polarizations and TM (horizontal magnetic)
Polarization, the combination that refractive index " low-high-low " is collectively formed using base area and the first group of periodic structure of Quantum Well are carried out in complete
Reflection limitation so that the effective refractive index of optical mode is converted under Spontaneous Parametric near the base area Refractive Index of Material of Quantum Well.
Embodiment 1
The embodiment of the present invention is broadly divided into two parts when designing electric pump Bragg reflection waveguide and being associated with photon pair source, first
The quantum well region for first determining electrical injection laser, as the sandwich layer of entire electric pump Bragg reflection waveguide, then design is real
The Bragg waveguide structure of transfer process under existing Spontaneous Parametric.It is described in detail with reference to Fig. 1, the modelling is theoretical
Including：
101：The Bragg reflection waveguiding structure of transfer process under quantum well region structure, Spontaneous Parametric is designed, is obtained by 2
The electrical injection laser that kind structure collectively constitutes；
Wherein, electrical injection laser includes lower electrode, N-type substrate, N-type Bragg waveguide layer, single quantum well or volume
Sub- well layer, p-type etching barrier layer, p-type Bragg waveguide layer, p-type protective layer and top electrode.
102：The phase matched tuning curve of transfer process under Spontaneous Parametric is calculated according to Bragg reflection waveguiding structure, it is micro-
Structural parameters are adjusted to make the position of the degeneracy pumping wavelength near Quantum Well peak gain wavelength；
103：The Injection Current and interior lights work(of electrical injection laser are calculated by the Bragg reflection waveguiding structure after finely tuning
The power density spectrum of transfer process under the relation curve of rate, Bragg waveguide Spontaneous Parametric, and then determine association photon to generating
Efficiency.
Wherein, the design quantum well region structure in step 101 is specially：
The material that second order nonlinear coefficient is more than a certain threshold value is selected as quantum well region material, determine well region thickness,
Quantum Well and the material component built, while determining the substrate material of counter structure；It is big to calculate the well depth of Quantum Well under stress
It is small；
Calculate z directions electronics, hole discrete energy levels and wave function；X is calculated, the directions y consider the hole with melange effect
Band structure；
According to taking under hole bands Structure Calculation valence band state density, transition moment matrix element and given carrier concentration
Rice energy level；
The linear gain coefficient of Quantum Well is calculated, and finds the wavelength location of peak gain.
Wherein, the Bragg reflection waveguiding structure of transfer process is specially under the design Spontaneous Parametric in step 101：
According to the material of waveguide core layer thickness and material selection Bragg waveguide reflecting layer, and designs and meet 1/4 wavelength cloth
The Bragg reflection layer thickness of the condition of glug waveguide；
Structural model is established in COMSOL softwares according to Prague sandwich layer and reflector thickness, solves different pumping wavelengths
With the effective refractive index of converted wave strong point under Spontaneous Parametric, the dispersion characteristics of structural model are obtained；
By dispersion characteristics and II type-Ⅱphase matching condition, the pump that the structural model may be implemented to convert under Spontaneous Parametric is solved
Pu optical wavelength and lower converting light wavelength, obtain phase matched tuning curve.
Further, which further includes：Made with designing the corresponding wavelength of peak gain that quantum well region obtains
For the pumping wavelength converted under Spontaneous Parametric, waveguide core layer thickness is calculated according to pumping wavelength.
Wherein, the degeneracy pumping wavelength in step 102 is specially：
So that signal light λ in being converted under Spontaneous ParametricsWith ideler frequency light λiWavelength there was only the pump wavelength of one group of solution.
To the model of each device in addition to doing specified otherwise, the model of other devices is not limited the embodiment of the present invention,
As long as the device of above-mentioned function can be completed.
In conclusion the integrated association photon pair source of the Bragg reflection waveguide for the electric pump that the embodiment of the present invention is chosen, profit
With the high second nonlinear characteristic of semi-conducting material, the large-scale integrated of association photon pair source may be implemented；Use the present invention
The emulation mode of proposition can be with transfer efficiency under the Its Gain Property and Spontaneous Parametric of analyzing and associating photon pair source.
Embodiment 2
The scheme in embodiment 1 is further introduced with reference to specific design cycle, it is described below：
201：Electrical injection laser overall structure by transfer process under quantum well region and Spontaneous Parametric Bragg waveguide
It collectively constitutes；
Suitable quantum well structure parameter is selected to make electrical injection laser generates near required pumping wavelength relatively to increase
Benefit, the electrical injection laser overall structure by transfer process under quantum well region and Spontaneous Parametric common group of Bragg waveguide
At i.e. electrical injection laser overall structure includes：Lower electrode, N-type substrate, N-type Bragg waveguide layer, single quantum well or volume
Sub- well layer, p-type etching barrier layer, p-type Bragg waveguide layer, p-type protective layer and top electrode.
The formula for calculating electrical injection laser linear gain coefficient g is：
Wherein, e is electron charge, and ω is photon angular frequency, nrFor Refractive Index of Material,For planck constant, c is vacuum
In the light velocity, ε0For permittivity of vacuum, m0For free electron quality, LzFor well region thickness,It is arrived for the n-th energy level of conduction band
The transition moment matrix element of valence band m energy levels, EcvFor the transition energy of conduction level and valence-band level, τinIt relaxes for interband electron
Henan time, fc、fvThe respectively fermi-distribution of conduction band and valence band；K is photon wave vector, and dk is the differential to wave vector k, entirely
Expression formula is the result integrated in k-space.
202：Design electrical injection laser quantum well region；
203：Design the Bragg reflection waveguiding structure of transfer process under Spontaneous Parametric；
Bragg waveguide core layer thickness and Bragg waveguide reflector thickness, wherein core material are calculated according to pumping wavelength
For above-mentioned quantum well region (including well region and base area), the Bragg reflection waveguiding structure while the also cloth as above-mentioned laser
Glug ducting layer.
204：The phase matched tuning curve of transfer process under Spontaneous Parametric is calculated according to Bragg reflection waveguiding structure, it is micro-
Structural parameters are adjusted to make the position of the degeneracy pumping wavelength near Quantum Well peak gain wavelength；
Tuning curve degeneracy pumping wavelength is found (so that signal light λ in being converted i.e. under Spontaneous ParametricsWith ideler frequency light λiWave
The long pump wavelength λ for there was only one group of solutionp), fine tuning structure parameter so that the position of the degeneracy pumping wavelength is in Quantum Well peak value
Near gain wavelength.
When specific implementation, which further includes：Judge whether the position of degeneracy pumping wavelength increases in Quantum Well peak value
Near beneficial wavelength, if so, 205 are thened follow the steps, if it is not, then re-executing step 202.
205：The association photon of the Bragg reflection waveguiding structure after fine tuning is calculated to generation efficiency.
The Injection Current of electrical injection laser and internal luminous power are calculated by the structural parameters determined in above-mentioned steps 204
Relation curve, the two meet relational expression below：
Wherein, PinternalThe internal power of pump light, η are generated for electrical injection laseriFor the injection efficiency of carrier, αi
For cavity loss, αmFor cavity lens loss, IthFor threshold current, I is Injection Current.
Further, the power density spectrum of transfer process under Bragg reflection waveguide Spontaneous Parametric is calculated：
Δ k=βp-βs-βi
Wherein, Ps(i)To convert signal light (ideler frequency light) power of generation, P under Spontaneous ParametricpFor pumping light power, d bis-
Rank nonlinear factor, L are that waveguide cavity is long, nsThe Refractive Index of Material of signal light, niFor the Refractive Index of Material of ideler frequency light, npFor pumping
The Refractive Index of Material of light, λs(i)For the wavelength of signal light (ideler frequency light), λi(s)For the wavelength of ideler frequency light (signal light), βpFor pumping
The propagation constant of light, βsFor the propagation constant of signal light, βiFor the propagation constant of ideler frequency light, AIFor transfer process under Spontaneous Parametric
In three wave interactions area.
According to the integral result of transfer process power density spectrum under pumping light power and Spontaneous Parametric, further determine that this is micro-
The association photon of Bragg reflection waveguiding structure after tune is to generation efficiency.
Wherein, the step of design electrical injection laser quantum well region in step 202 is specially：
1) material for selecting second order nonlinear coefficient larger determines well region thickness L as quantum well region materialz, quantum
Trap and the material component built, while determining the substrate material of counter structure；
2) the well depth size of Quantum Well under stress is calculated；
3) calculate z directions electronics, hole discrete energy levels and wave function；
4) x is calculated, the directions y consider the hole bands structure (E-k with melange effectxy)；
5) according to hole bands structure (E-kxy) the band-like density of states of given price, transition moment matrix element and given carrier it is dense
Fermi level under degree；
6) the linear gain coefficient g (ω) of Quantum Well is calculated, and finds the wavelength location λ of peak gainp。
Further, under the design Spontaneous Parametric in step 203 the step of the Bragg reflection waveguiding structure of transfer process
Specially：
1) to design the corresponding wavelength X of peak gain that quantum well region obtains in step 202pAs lower turn of Spontaneous Parametric
The pumping wavelength changed, calculating waveguide core layer thickness according to the pumping wavelength is(i.e. core layer thickness is
Quantum well region thickness, including well region and base area's thickness), nc(it is here quantum well structure Zhonglei for the Refractive Index of Material of sandwich layer
The Refractive Index of Material of layer), neffIt is λ for wavelengthpThe effective refractive index at place；
2) it according to the material of waveguide core layer thickness and material selection Bragg waveguide reflecting layer, and designs and meets 1/4 wavelength
The condition k of Bragg waveguideidiThe Bragg reflecting layer thickness d of=pi/2i, kiFor pump light λpIn i-th layer of wave vector；
3) establish structural model in COMSOL softwares by the obtained parameter of step 2) design, solve different pumping wavelengths and
The effective refractive index of converted wave strong point under Spontaneous Parametric, obtains the dispersion characteristics of structural model；
Wherein, COMSOL softwares are known to those skilled in the art, and the embodiment of the present invention does not repeat this.
4) by dispersion characteristics and II type-Ⅱphase matching condition, solve what the structural model may be implemented to convert under Spontaneous Parametric
Pump wavelength (λp) and lower converting light wavelength (λi, λs), obtain phase matched tuning curve.
Wherein, II type-Ⅱphase matching condition is known to those skilled in the art, and the embodiment of the present invention does not repeat this.
In conclusion the present invention 201 to 205 establishes electric pump Bragg reflection waveguide association photon through the above steps
To the emulation mode in source, the characteristic that photon pair source is associated with to be further improved electrical pumping provides the theoretical foundation of system.
Embodiment 3
With reference to specific parameter, the design process of scheme in Examples 1 and 2 is described in detail, is referred to down
Text description：
By taking quantum well region material is GaInP/InGaAlP, Bragg reflection layer material is AlGaAs an example, according to above-mentioned reality
The mode of applying designs to obtain the structure of electric pump Bragg reflection waveguide association photon pair source, as shown in Fig. 2, composition from the bottom up
Part is followed successively by：
1) electrode A u under；
2) N-type GaAs substrates：Doping type is N-type, doped chemical Si, and thickness is 1.4 μm, doping concentration is 2 ×
1019cm-3；
3) N-type Bragg reflecting layer：Doping type is N-type, and doped chemical Si, N-type Bragg reflecting layer is by two kinds of materials
Material is alternately constituted, totally 6 groups, 12 layers：
Al0.95Ga0.05(subscript 0.95 indicates that the molar percentage of AlAs in the ternary compound is 95% to As, subscript 0.05
Indicate that the molar percentage of GaAs in the ternary compound is 5%；Ternary compound subscript meaning below is similar), thickness is
199.5nm, Al0.55Ga0.45As thickness is 103.5nm.
Each from the bottom up layer of material component and doping concentration be：Al0.95Ga0.05As(2×1018cm-3),
Al0.55Ga0.45As(1.82×1018cm-3), Al0.95Ga0.05As(1.65×1018cm-3), Al0.55Ga0.45As(1.48×
1018cm-3), Al0.95Ga0.05As(1.3×1018cm-3), Al0.55Ga0.45As(1.13×1018cm-3), Al0.95Ga0.05As(9.6
×1017cm-3), Al0.55Ga0.45As(7.88×1017cm-3), Al0.95Ga0.05As(6.16×1017cm-3), Al0.55Ga0.45As
(4.44×1017cm-3), Al0.95Ga0.05As(2.72×1017cm-3), Al0.55Ga0.45As(1×1017cm-3)；
4) Quantum Well：It is respectively to build area In from the bottom up0.50Ga0.36Al0.14P (thickness 115.7nm) (0.50 tables of subscript
Show that the molar percentage of InP in the quaternary compound is 50%, subscript 0.36 indicates the Mole percent of GaP in the quaternary compound
Than being 36%, subscript 0.14 indicates that the molar percentage of AlP in the quaternary compound is 14%；Quaternary compound subscript below
Meaning is similar), well region Ga0.41In0.59P (thickness 5nm) builds area In0.50Ga0.36Al0.14P (thickness 115.7nm), nothing are mixed
It is miscellaneous；
5) p-type Bragg reflecting layer：Doping type is p-type, and doped chemical C, p-type Bragg reflecting layer is by two kinds of materials
It alternately constitutes, totally 6 groups, 12 layers.
Al0.55Ga0.45As thickness is 103.5nm, Al0.95Ga0.05As, thickness 199.5nm.Each from the bottom up layer
Material component and doping concentration are：Al0.55Ga0.45As(1×1017cm-3), Al0.95Ga0.05As(2.72×1017cm-3),
Al0.55Ga0.45As(4.44×1017cm-3), Al0.95Ga0.05As(6.16×1017cm-3), Al0.55Ga0.45As(7.88×
1017cm-3), Al0.95Ga0.05As(9.6×1017cm-3), Al0.55Ga0.45As(1.13×1018cm-3), Al0.95Ga0.05As(1.3
×1018cm-3), Al0.55Ga0.45As(1.48×1018cm-3), Al0.95Ga0.05As(1.65×1018cm-3), Al0.55Ga0.45As
(1.82×1018cm-3), Al0.95Ga0.05As(2×1018cm-3)；
6) p-type etching barrier layer：Doping type is p-type, doped chemical C, In0.48Ga0.42Al0.10P, thickness 10nm,
Doping concentration is 7 × 1018cm-3；
7) p-type GaAs protective layers：Doping type is p-type, doped chemical C, thickness 230nm, doping concentration is 2 ×
1019cm-3；
8) top electrode Au.
Wherein, Quantum Well includes well region (Ga0.41In0.59P) He Leiqu (In0.50Ga0.36Al0.14P), Bragg reflection waveguide
Including：GaAs substrates, N-type Bragg reflecting layer, p-type Bragg reflecting layer, p-type etching barrier layer, p-type GaAs protective layers.Under
Electrode A u and top electrode Au is used for realizing that electrical pumping excitation generates pumping laser.
The embodiment of the present invention is only illustrated by taking above-mentioned doping concentration, thickness, doped chemical etc. as an example, specific implementation
When, above-mentioned value is not limited, according to being set in practical application and is chosen.
Embodiment 4
With reference to specific parameter, the design process of scheme in Examples 1 and 2 is described in detail, is referred to down
Text description：
1) GaInP and InGaAlP has higher second order nonlinear coefficient, is as the ideal converted under realization Spontaneous Parametric
Material, so choosing the material of GaInP, InGaAlP respectively as the well region of laser and base area；
2) materials of the AlGaAs Bragg reflecting layer is chosen, GaAs is substrate material；
3) according to the research to strained quantum well laser characteristic it is found that the TE polarised light (transverse electrics generated under compression strain
Polarization) there is larger gain, so choosing the well region material component Ga with compression strain0.41In0.59P (dependent variable be ε=-
0.65%) the base area material component In not strained, is chosen0.50Ga0.36Al0.14P, well region thickness Lz=5nm；
4) well depth under well region compression strain (ε=- 0.65%) is calculated according to the structural parameters of quantum well region
For：Conduction band electron well depth：ΔEc=0.1243eV, valence band heavy hole well depth：ΔEhh=0.0669eV, valence band light hole well depth：
ΔElh=0.1204eV；
5) Schrodinger equation for solving the directions z obtains z to energy level value and wave function, as shown in Fig. 3,4,5,6, wherein obtaining
The first energy level of conduction band arrived：Ec=1.859eV, the first energy level of heavy hole：Eh1=-4.6meV, the second energy level of heavy hole：Eh2=-
65.9meV, the first energy level of light hole：El1=-75.9meV；
6) consider the band melange effect between valence band, the Schrodinger in the directions valence band xy is solved using Luttinger Hamiltonians
Equation obtains the hole bands structure (E-k in the directions xyxy), as shown in Figure 7；
7) by the counted hole bands structure (E-k of step (6)xy)：Calculate hole state density：(its
In, kxyFor the wave vector in the directions pump light xy, LzFor the directions well region z thickness), as shown in Figure 8；Calculate the first energy level of conduction band (C1)
Transition moment matrix element between the first energy level of heavy hole (HH1) | Rcv|2=<Ψc|-er|Ψv>2(Ψc、ΨvRespectively conduction band
With the wave function of valence band, e is electron charge, and r is position operator), as shown in Figure 9；Calculate given injection carrier concentration be 8 ×
1018cm-3When fermi level value：Conduction band fermi level Efc=1.977eV, valence band fermi level Efv=-9.1meV；
8) the linear gain coefficient of Quantum Well is calculated, as shown in Figure 10, and the wavelength location for finding peak gain is λp=
(injection carrier concentration is 8 × 10 to 654nm18cm-3)。
9) to design the corresponding wavelength X of peak gain that quantum well region obtainsp=654nm under Spontaneous Parametric as converting
Pumping wavelength, according to the wavelength calculate waveguide core layer thickness beFor Quantum Well
The thickness in region (including well region and base area), and then determine that it is d=115.7nm to build area's thickness；
10) because AlGaAs is the common materials of Bragg reflection waveguide, the embodiment of the present invention selects 1/4 wavelength cloth
The high low-index material in glug waveguide reflecting layer is：Al0.55Ga0.45As and Al0.95Ga0.05As, every layer of Bragg reflecting layer
Thickness is pump optical mode lateral transport constant 1/4, i.e. kidi=pi/2, obtain two kinds of materials thickness difference 103.5nm and
199.5nm；
11) above-mentioned waveguide modes are established by COMSOL softwares, chooses ridge waveguide and optical mode field is laterally limited, counts
It calculates that pumping wavelength is 651nm~654nm, lower Wavelength-converting is effective refractive index in 1200nm~1400nm, obtains structure
Dispersion characteristics, as shown in figure 11；
12) three wavelength converted under Spontaneous Parametric meet：1/λp=1/ λs+1/λiAnd np/λp=ns/λs+ni/λi, solve
Equation group can obtain realizing the pump wavelength (λ converted under Spontaneous Parametricp) and lower converting light wavelength (λi, λs), in turn
Phase matched tuning curve is obtained, as shown in figure 12.By fine tuning structure parameter, it is 653.1nm, position to obtain degeneracy pumping wavelength
Near Quantum Well peak gain wavelength 654nm；
13) obtain calculating the relation curve (α of laser Injection Current and internal luminous power according to above-mentioned analysisi=20cm-1, the injection efficiency η of carrieriRespectively 20%, 30%, 40%), under Bragg waveguide Spontaneous Parametric transfer process power
Density spectra, association photon are to generation efficiency curve (αi=20cm-1, the injection efficiency η of carrieriRespectively 20%, 30%,
40%), respectively as shown in Figure 13,14 and Figure 15.
The embodiment of the present invention only by the injection efficiency of above-mentioned carrier, degeneracy pumping wavelength, material thickness etc. for
It illustrates, when specific implementation, above-mentioned value is not limited, according to being set in practical application and is chosen.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Serial number is for illustration only, can not represent the quality of embodiment.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source, which is characterized in that the emulation mode
Include the following steps：
The Bragg reflection waveguiding structure of transfer process under quantum well region structure, Spontaneous Parametric is designed, acquisition is total to by 2 kinds of structures
With the electrical injection laser of composition；
The phase matched tuning curve of transfer process under Spontaneous Parametric, fine tuning structure ginseng are calculated according to Bragg reflection waveguiding structure
Number makes the position of the degeneracy pumping wavelength near Quantum Well peak gain wavelength；
The relationship of the Injection Current and internal luminous power of electrical injection laser is calculated by the Bragg reflection waveguiding structure after finely tuning
The power density spectrum of transfer process under curve, Bragg waveguide Spontaneous Parametric, and then determine association photon to generation efficiency.
2. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source according to claim 1, special
Sign is that the electrical injection laser includes：
Lower electrode, N-type substrate, N-type Bragg waveguide layer, single quantum well or multiple quantum well layer, p-type etching barrier layer, p-type cloth
Glug ducting layer, p-type protective layer and top electrode.
3. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source according to claim 1, special
Sign is that the design quantum well region structure is specially：
The material that second order nonlinear coefficient is more than a certain threshold value is selected to determine well region thickness, quantum as quantum well region material
Trap and the material component built, while determining the substrate material of counter structure；Calculate the well depth size of Quantum Well under stress；
Calculate z directions electronics, hole discrete energy levels and wave function；X is calculated, the directions y consider the hole bands with melange effect
Structure；
According to Fermi's energy under hole bands Structure Calculation valence band state density, transition moment matrix element and given carrier concentration
Grade；
The linear gain coefficient of Quantum Well is calculated, and finds the wavelength location of peak gain.
4. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source according to claim 1, special
Sign is that the Bragg reflection waveguiding structure of transfer process is specially under the design Spontaneous Parametric：
According to the material of waveguide core layer thickness and material selection Bragg waveguide reflecting layer, and designs and meet 1/4 wavelength Bragg
The Bragg reflection layer thickness of the condition of waveguide；
Structural model is established in COMSOL softwares according to Prague sandwich layer and reflector thickness, solves different pumping wavelengths and oneself
The effective refractive index at parametric down conversion wavelength is sent out, the dispersion characteristics of structural model are obtained；
By dispersion characteristics and II type-Ⅱphase matching condition, the pump light that the structural model may be implemented to convert under Spontaneous Parametric is solved
Wavelength and lower converting light wavelength, obtain phase matched tuning curve.
5. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source according to claim 4, special
Sign is that the waveguide core layer thickness is specially：
To design the corresponding wavelength of peak gain that quantum well region obtains as the pumping wavelength converted under Spontaneous Parametric, according to
Pumping wavelength calculates waveguide core layer thickness.
6. a kind of emulation mode of electric pump Bragg reflection waveguide association photon pair source according to claim 1, special
Sign is that the degeneracy pumping wavelength is specially：
So that signal light λ in being converted under Spontaneous ParametricsWith ideler frequency light λiWavelength there was only the pump wavelength of one group of solution.
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| CN103901700A (en) * | 2014-05-06 | 2014-07-02 | 天津大学 | Mini-type quantum relevancy photon pair source with adjustable wavelength and controllable frequency spectrum and generating method |
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