CN108493293A - Compound photoelectricity conversion thin film and its preparation method and application - Google Patents
Compound photoelectricity conversion thin film and its preparation method and application Download PDFInfo
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- CN108493293A CN108493293A CN201810170806.3A CN201810170806A CN108493293A CN 108493293 A CN108493293 A CN 108493293A CN 201810170806 A CN201810170806 A CN 201810170806A CN 108493293 A CN108493293 A CN 108493293A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 230000005622 photoelectricity Effects 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 20
- 239000012266 salt solution Substances 0.000 claims abstract description 7
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 239000002243 precursor Substances 0.000 claims abstract description 3
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 64
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 32
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 25
- 239000012528 membrane Substances 0.000 claims description 24
- 239000007864 aqueous solution Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 4
- XLJMAIOERFSOGZ-UHFFFAOYSA-N cyanic acid Chemical compound OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 claims description 2
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 claims description 2
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 claims description 2
- 238000000844 transformation Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 230000005518 electrochemistry Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- BZWKPZBXAMTXNQ-UHFFFAOYSA-N sulfurocyanidic acid Chemical compound OS(=O)(=O)C#N BZWKPZBXAMTXNQ-UHFFFAOYSA-N 0.000 description 2
- NMOJAXCSURVGEY-UHFFFAOYSA-N N#CC#N.[S] Chemical compound N#CC#N.[S] NMOJAXCSURVGEY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to photoelectric functional material technology fields, and in particular to compound photoelectricity conversion thin film and its preparation method and application.The present invention is that some of hole transmission layer is changed into light absorbing layer, i.e., using hole transmission layer as precursor, is handled using inorganic salt solution, pass through chemical reaction, the a part of doping for making hole transmission layer, forms composite layer, obtains the stacked structure of doped and compounded layer and hole transmission layer；The stacked structure is compound photoelectricity conversion thin film, and doped and compounded layer therein is light absorbing layer.The method of the present invention is simple and convenient, and the compound photoelectricity conversion thin film of preparation can be used in low-cost solar battery.
Description
Technical field
The invention belongs to photoelectric functional material technology fields, and in particular to compound photoelectricity conversion thin film and preparation method thereof
And application.
Background technology
Chemical doping method and process is simple, at low cost, has wide application field.For example, chemical doping can make place
Become conduction state in the conjugated polymer of insulation state.Thin-film solar cells usually require hole transmission layer, light absorbing layer with
And electron transfer layer, each layer are required for specific material and corresponding preparation process.In order to promote the sexual valence of solar cell
Than on the one hand to promote the performance of layers of material, on the other hand need to reduce manufacturing cost.
Cuprous sulfocyanide（CuSCN）It is a kind of typical compound semiconductor, has in area of solar cell and widely answer
With being typically used as hole transmission layer.Inventor is it is found that copper film can be with sulphur cyanogen in atmospheric environment or in aqueous solution
Hydrochlorate reacts, and cuprous thiocyanate membrane is formed in situ. [（1）Xuwei, Tang Jiaqi, Ji Xin, a kind of erasable, nothing that can read
Machine film dual stabilization part and preparation method thereof, application for a patent for invention number: 200710044248.8;（2）Xuwei, Ji Xin, suddenly
Zhong Qi, a kind of rewritable electrical storage with inorganic thin film and preparation method thereof, application for a patent for invention number:
200810038577.6；（3）Dong YW,et al., Electrochemical and Solid-State Letters
2009;12:H54-7.（4）Ji X,et al.,. Electrochemical and Solid-State Letters 2009;
12:H344-7]。
It is a discovery of the invention that carrying out chemical doping appropriate to hole transmission layer, it can be made to be transformed into light absorbing layer.
Invention content
Present invention aims at propose simple for process, the low-cost compound photoelectricity conversion thin film of one kind and its preparation side
Method and application.
The preparation method of compound photoelectricity conversion thin film proposed by the present invention is to be changed into some of hole transmission layer
Light absorbing layer is handled that is, using hole transmission layer as precursor using inorganic salt solution（It impregnates）, by chemical reaction, hole is made to pass
The a part of doping of defeated layer, forms composite layer, obtains the stacked structure of doped and compounded layer and hole transmission layer, as shown in Figure 1；It should
Stacked structure is compound photoelectricity conversion thin film, and doped and compounded layer therein is light absorbing layer.
In the present invention, the hole transmission layer uses cuprous thiocyanate membrane；The inorganic salt solution uses silver nitrate water
Solution.
In the present invention, by controlling inorganic salt solution concentration and processing（It impregnates）Time controls the doping level of film.
Specifically, a concentration of the 10 of silver nitrate aqueous solution-3~10-2Mol/L；Cuprous thiocyanate membrane and silver nitrate aqueous solution it is anti-
It is 0.5 ~ 30 minute between seasonable.
The preparation method of compound photoelectricity conversion thin film proposed by the present invention, detailed process are：With tin indium oxide conduction glass
Glass（ITO）For substrate, copper film is first deposited, then reaction is impregnated to get using ITO as the sulphur of substrate in water soluble thiocyanate solution
The cuprous film of cyanic acid；Then, by cuprous thiocyanate membrane be immersed in silver nitrate aqueous solution react a period of time, taking-up spend from
The cleaning of sub- water, naturally dry or with hot blast drying to get the compound photoelectricity of the cuprous sulfocyanide stacked structure of chemical doping
Switching film.
In the present invention, one kind of sodium sulfocyanate, potassium rhodanide, ammonium thiocyanate can be used in water soluble thiocyanate.
In the present invention, a concentration of the 10 of silver nitrate aqueous solution-3~10-2Mol/L.
In the present invention, the reaction time of cuprous thiocyanate membrane and silver nitrate aqueous solution is 0.5 ~ 30 minute.
In the present invention, the concentration of suitable control silver nitrate solution and processing time, the top of cuprous thiocyanate membrane can be allowed
Divide and be transformed into doped and compounded layer, and member-retaining portion cuprous thiocyanate membrane, as shown in Figure 2.
After doping, the visible film of naked eyes has blackening phenomena, illustrates to be chemically reacted.
Scanning electron microscope（SEM）It is new that observation confirms that the cuprous sulfocyanide surface by silver nitrate aqueous solution processing has
Nanostructure substance is formed.
The optical electro-chemistry test of film is under 100 milliwatts/square centimeter light intensity irradiation, in the sodium sulphate electricity of 0.5 mol/L
It solves in liquid, is measured under zero-bias.Proof has good opto-electronic conversion performance.
Film prepared by the present invention can be used as the photoelectric conversion material in solar cell.It is this by hole transmission layer
The method for being doped to build photoelectricity conversion thin film can obtain application in low-cost solar battery.It is prepared with the present invention
Photoelectricity conversion thin film based on, redeposited electron transfer layer and metallic top electrode, you can to constitute simple solar cell
Prototype.
In addition, the necks such as the doping film for preparing of the present invention is detected in micro organic molecule, light-emitting film and sorbing material
Domain is also widely used.
Description of the drawings
Fig. 1 hole transmission layers are partially converted to light absorbing layer by chemical doping, which is doped and compounded layer.
Fig. 2 is under nitric acid Ag doping, cuprous sulfocyanide（CuSCN）Hole transmission layer is partially converted to doped and compounded layer, should
Doped and compounded layer is used as light absorbing layer.ITO substrate in figure is indium tin oxide-coated glass.
Fig. 3 is typical photoelectric current ~ time graph.At 1 mM/l of silver nitrate aqueous solution of cuprous thiocyanate membrane
Reason 30 seconds.Wherein, ordinate is：Current density（Microampere/square centimeter）；Abscissa is：Time（Second）.
Fig. 4 is typical photoelectric current ~ time graph.The silver nitrate aqueous solution of 0.01 mol/L of cuprous thiocyanate membrane
Processing 30 seconds.Wherein, ordinate is：Current density（Microampere/square centimeter）；Abscissa is：Time（Second）.
Fig. 5 is typical photoelectric current ~ time graph.Cuprous thiocyanate membrane is impregnated with 1 mM/l of silver nitrate aqueous solution
5 minutes.Wherein, ordinate is：Current density（Microampere/square centimeter）；Abscissa is：Time（Second）.
Fig. 6 is typical photoelectric current ~ time graph.Cuprous thiocyanate membrane is soaked with 7.5 mM/ls of silver nitrate aqueous solutions
Bubble 5 minutes.Wherein, ordinate is：Current density（Microampere/square centimeter）；Abscissa is：Time（Second）.
Specific implementation mode
The method of converting slave hole transmission layer to light absorbing layer that the invention is further illustrated by the following examples proposes.
Embodiment 1
Copper film is deposited in ITO conductive substrates, then by copper film immerse rhodanate aqueous solution in, fully reaction after, spend from
Sub- water washing is spare to get the cuprous thiocyanate membrane in ITO conductive substrates.
Three pieces cuprous thiocyanate membrane is immersed in a concentration of 1 mM/l of silver nitrate aqueous solution, impregnates 30 respectively
Second, 1 minute, 30 minutes, film is then taken out from solution, is fully washed with deionized water, uses hot blast drying.Three kinds of film samples
Product are respectively used to optical electro-chemistry measurement.
30 seconds films are handled with silver nitrate, typical photoelectric current ~ time graph is as shown in Figure 3.Primary photocurrent compared with
Greatly, it tapers into, density of photocurrent is about 6.6 microamperes/square centimeter after stablizing.
1 minute and 30 minutes film sample is impregnated with silver nitrate solution, density of photocurrent is respectively 8.2 microamperes/square
Centimetre and 10.2 microamperes/square centimeter.
Fig. 3 is typical photoelectric current ~ time graph.At 1 mM/l of silver nitrate aqueous solution of cuprous thiocyanate membrane
Reason 30 seconds.
Embodiment 2
Three pieces cuprous thiocyanate membrane is immersed in the silver nitrate aqueous solution of a concentration of 0.01 mol/L, respectively impregnate 30 seconds,
1 minute, 30 minutes, film is then taken out from solution, is fully washed with deionized water, is used hot blast drying.Three kinds of film samples
It is respectively used to optical electro-chemistry measurement.
30 seconds films are handled with silver nitrate, typical photoelectric current ~ time graph is as shown in Figure 4.Primary photocurrent compared with
Greatly, density of photocurrent is about 5.5 microamperes/square centimeter after stablizing.
1 minute and 30 minutes film sample is impregnated with silver nitrate solution, density of photocurrent is respectively 10.13 microamperes/it puts down
Square centimetre and 10.09 microamperes/square centimeter.
Fig. 4 is typical photoelectric current ~ time graph.The silver nitrate aqueous solution of 0.01 mol/L of cuprous thiocyanate membrane
Processing 30 seconds.
Embodiment 3
It is respectively 1 mM/l, 2.5 mM/ls, 7.5 mM/ls that three pieces cuprous thiocyanate membrane, which is immersed in concentration,
Three glasss of silver nitrate aqueous solutions in, soaking time is all 5 minutes, and film is then taken out from solution, is fully washed with deionized water
It washs, uses hot blast drying.Three kinds of film samples are respectively used to optical electro-chemistry measurement.
1 mM/l of silver nitrate aqueous solution impregnates 5 minutes samples, and photoelectric current ~ time graph is as shown in Figure 5.Photoelectricity
Current density is respectively 10.13 microamperes/square centimeter.
2.5 mM/ls of silver nitrate aqueous solutions impregnate 5 minutes samples, and density of photocurrent is respectively 11.11 microamperes/
Square centimeter.
7.5 mM/ls of silver nitrate aqueous solutions impregnate 5 minutes samples, and photoelectric current ~ time graph is as shown in Figure 6.Light
Current density is respectively 10.69 microamperes/square centimeter.
Fig. 5 is typical photoelectric current ~ time graph.Cuprous thiocyanate membrane is impregnated with 1 mM/l of silver nitrate aqueous solution
5 minutes.
Fig. 6 is typical photoelectric current ~ time graph.Cuprous thiocyanate membrane is soaked with 7.5 mM/ls of silver nitrate aqueous solutions
Bubble 5 minutes.
Claims (6)
1. a kind of preparation method of compound photoelectricity conversion thin film, which is characterized in that be by some transformations of hole transmission layer
It is handled using inorganic salt solution that is, using hole transmission layer as precursor for light absorbing layer, by chemical reaction, makes hole transmission layer
A part of doping, form composite layer, obtain the stacked structure of doped and compounded layer and hole transmission layer；The stacked structure is multiple
The photoelectricity conversion thin film of mould assembly, doped and compounded layer therein are light absorbing layer；
Wherein, the hole transmission layer uses cuprous thiocyanate membrane；The inorganic salt solution uses silver nitrate aqueous solution.
2. the preparation method of compound photoelectricity conversion thin film according to claim 1, which is characterized in that inorganic by controlling
Concentration of salt solution and processing time control the doping level of film.
3. the preparation method of compound photoelectricity conversion thin film according to claim 2, which is characterized in that the silver nitrate water
A concentration of the 10 of solution-3~10-2Mol/L；The reaction time of cuprous thiocyanate membrane and silver nitrate aqueous solution is 0.5 ~ 30 point
Clock.
4. the preparation method of compound photoelectricity conversion thin film according to claim 2, which is characterized in that concrete operations flow
For：Using indium tin oxide-coated glass as substrate, first deposit copper film, then impregnate in water soluble thiocyanate solution reaction to get
Using indium tin oxide-coated glass as the cuprous thiocyanate membrane of substrate；Then, cuprous thiocyanate membrane is immersed in silver nitrate water
A period of time is reacted in solution, taking-up cleaned with deionized water, naturally dry or with hot blast drying to get the sulphur of chemical doping
The compound photoelectricity conversion thin film of the cuprous stacked structure of cyanic acid；Wherein：
Water soluble thiocyanate uses one kind of sodium sulfocyanate, potassium rhodanide, ammonium thiocyanate；
A concentration of the 10 of silver nitrate aqueous solution-3~10-2Mol/L；
The reaction time of cuprous thiocyanate membrane and silver nitrate aqueous solution is 0.5 ~ 30 minute.
5. a kind of compound photoelectricity conversion thin film obtained by one of the claim 1-4 preparation methods.
6. application of the compound photoelectricity conversion thin film in preparing solar cell as claimed in claim 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810170806.3A CN108493293B (en) | 2018-03-01 | 2018-03-01 | Composite photoelectric conversion film and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810170806.3A CN108493293B (en) | 2018-03-01 | 2018-03-01 | Composite photoelectric conversion film and preparation method and application thereof |
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| CN108493293A true CN108493293A (en) | 2018-09-04 |
| CN108493293B CN108493293B (en) | 2020-04-07 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932159A (en) * | 2016-05-11 | 2016-09-07 | 天津市职业大学 | Perovskite solar battery hole transport layer composite plated film liquid and preparation method |
| CN107275426A (en) * | 2017-05-26 | 2017-10-20 | 电子科技大学 | A kind of many sophisticated nano-structured solar cells of plasma and its manufacture method |
-
2018
- 2018-03-01 CN CN201810170806.3A patent/CN108493293B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932159A (en) * | 2016-05-11 | 2016-09-07 | 天津市职业大学 | Perovskite solar battery hole transport layer composite plated film liquid and preparation method |
| CN107275426A (en) * | 2017-05-26 | 2017-10-20 | 电子科技大学 | A kind of many sophisticated nano-structured solar cells of plasma and its manufacture method |
Non-Patent Citations (1)
| Title |
|---|
| 吴莹莹，徐伟: "Cu2(OH)3NO3/Ag复合物的制备及性能研究", 《复旦学报》 * |
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