CN108484158A - A kind of dielectric material of piezoresistor and preparation method thereof - Google Patents

A kind of dielectric material of piezoresistor and preparation method thereof Download PDF

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CN108484158A
CN108484158A CN201810502883.4A CN201810502883A CN108484158A CN 108484158 A CN108484158 A CN 108484158A CN 201810502883 A CN201810502883 A CN 201810502883A CN 108484158 A CN108484158 A CN 108484158A
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additive
dielectric material
piezoresistor
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preparation
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汪雪婷
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Jiangsu Shi Rui Electronic Science And Technology Co Ltd
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Abstract

The invention discloses a kind of dielectric materials of piezoresistor and preparation method thereof.The dielectric material is made of the raw material of following weight parts：100~120 parts of main material ZnO, additive is as follows：0.5~0.8 part of Bi2O3, 0.8~1.5 part of SnO2, 0.8~1.5 part of Ni2O3, 9~13 parts of SiO2, 0.2~0.6 part of Cr2O3, 15~21 parts of Y2O3, 0.1~0.2 part of boric acid.The dielectric material is using the oxide of yttrium as raw material, and nonlinear factor takes into account lower Leakage Current and good electric conductivity 50 or more on the basis of small, and after being added to the oxide of neodymium, performance is further promoted.The preparation method of the present invention is simple for process, and material is easy to get, and cost is relatively low, easy to spread.

Description

A kind of dielectric material of piezoresistor and preparation method thereof
Technical field
The invention belongs to resistance material fields, and in particular to a kind of dielectric material of piezoresistor and preparation method thereof.
Background technology
" varistor " is a kind of resistance device with nonlinear wind vibration, is mainly used for when circuit bears overvoltage Voltage clamping is carried out, absorbs extra electric current to protect Sensitive Apparatus.English name is " Voltage Dependent Resistor " is abbreviated as " VDR ", or is called " Varistor ".The resistor material of piezoresistor is semiconductor, so it It is a kind of semiconductor resistor.Zinc oxide (ZnO) piezoresistor largely used now, its material of main part have two Valence element zinc (Zn) and hexad oxygen (O) are constituted.
In recent years, with the rapid development of information technology, the miniaturization of electronic equipment, multifunction, high stability become The inexorable trend of development, the varistor as protection semiconductor element is also correspondingly towards frivolous, low pressure, high reliability side To development.But piezoresistor in the prior art cannot take into account frivolous and high-performance, therefore, how to seek it is a kind of not only frivolous but also Pressure-sensitive resistor medium material with excellent conductive performance is urgent problem.
105913987 A of CN disclose a kind of zinc oxide varistor, and electrode layer includes and the zinc oxide ceramics The connected transition zone of substrate and the welding layer on the outside of the transition zone, welding layer are formed by noble metals such as gold, silver, at This is higher.
Invention content
In view of the deficiencies of the prior art, the present invention provides a kind of dielectric material of piezoresistor and preparation method thereof, institute It is small to give an account of material, nonlinear factor 50 or more, has lower Leakage Current and good electric conductivity, described Preparation method is simple for process, and material is easy to get, and cost is relatively low, easy to spread.
The present invention is achieved by the following technical solutions：
A kind of dielectric material of piezoresistor, is made of the raw material of following weight parts：Main material ZnO100~120 part, Additive is as follows：0.5~0.8 part of Bi2O3, 0.8~1.5 part of SnO2, 0.8~1.5 part of Ni2O3, 9~13 parts of SiO2, 0.2~0.6 Part Cr2O3, 15~21 parts of Y2O3, 0.1~0.2 part of boric acid.
Further, the additive further includes 0.5~1.2 part of Nd2O3。
Further, the boric acid is the boric acid ethanol solution of concentration 10~20%.
A kind of preparation method of the dielectric material of piezoresistor, includes the following steps：
Main material and various additives is respectively configured in step 1) in proportion；
The additive that step 1) configures is placed in reaction kettle by step 2), deionized water is added, while surface-active is added Agent and diluent, the surfactant account for the 0.5~0.8% of additive gross mass, and the diluent accounts for additive gross mass 0.1~0.3%, and the sum of surfactant and diluent account for the ratio of additive gross mass and are less than 1%, 100 under room temperature~ 150r/min is stirred evenly, and obtains additive slurry；
Step 1) the main material is added in the step 2) additive slurry step 3), while coupling agent is added, institute Coupling agent accounts for additive gross mass 0.1~0.2% is stated, 100~150r/min is stirred evenly under room temperature in a kettle, is obtained Dielectric paste；
Step 3) the dielectric paste is placed in the ball mill with white stone by step 4), and 200~250r/min ball millings 1~ 2h is transferred in fixing mould and is shaped, and is finally placed in drying box and is dried at 105~110 DEG C, and blocky idiosome is obtained；
Step 4) the blocky idiosome is placed in 1000~1200 DEG C of sintering in Muffle furnace by step 5), is obtained described pressure-sensitive The dielectric material of resistor.
Further, the surfactant is fatty alcohol polyoxyethylene ether ammonium sulfate or lauroyl glutamate.
Further, the diluent is acetone or cyclohexanone.
Further, the coupling agent is silane coupling A 171 or A172.
Beneficial effects of the present invention are as follows：
The pressure-sensitive resistor medium material of the present invention, using the oxide of yttrium as raw material, nonlinear factor 50 with On, and lower Leakage Current and good electric conductivity are taken into account on the basis of small, and after being added to the oxide of neodymium, property It can further be promoted；The preparation method of the present invention is simple for process, and material is easy to get, and cost is relatively low, easy to spread.
Specific implementation mode
The present invention is further elaborated with reference to embodiment.
Embodiment 1
A kind of dielectric material of piezoresistor, the dielectric material are made of by weight following raw material：
100 parts of ZnO of main material, additive are as follows：0.5 part of Bi2O3, 0.8 part of SnO2, 0.8 part of Ni2O3, 9 parts of SiO2, 0.2 part Cr2O3, 15 parts of Y2O3, 0.1 part of boric acid (10% boric acid ethanol solution).
The preparation method of the dielectric material is as follows：
(1) main material and various additives are configured according to the above ratio.
(2) additive configured in proportion is placed in reaction kettle, deionized water is added and (accounts for additive gross mass 80%), while fatty alcohol polyoxyethylene ether ammonium sulfate is added as surfactant (account for additive gross mass 0.5%), adds Enter acetone as diluent (account for additive gross mass 0.3%), and the sum of surfactant and diluent account for the total matter of additive The ratio of amount is less than 1%, and 100r/min is stirred evenly under room temperature, obtains additive slurry.
(3) the main material ZnO configured in proportion is added in above-mentioned additive slurry, while silane coupling A 171 is added (account for additive gross mass 0.1%), 100r/min is stirred evenly under room temperature in a kettle, obtains dielectric paste.
(4) above-mentioned dielectric paste is placed in the ball mill with white stone, 200r/min ball millings 1h or so, at this time in slurry Solid particle average grain diameter is less than 1 μm, transfers in fixing mould and shapes, is finally placed in drying box and is dried at 105 DEG C, obtained To blocky idiosome (idiosome is diameter 15.0mm, the disc-shaped idiosome of thickness 3.0mm).
(5) above-mentioned blocky idiosome is placed in 1000 DEG C of sintering in Muffle furnace, obtains the medium material of the piezoresistor Material (finished product is diameter about 12.5mm, thickness about 2.1mm disc-shapeds material).
Embodiment 2
A kind of dielectric material of piezoresistor, the dielectric material are made of by weight following raw material：
120 parts of ZnO of main material, additive are as follows：0.8 part of Bi2O3, 1.5 parts of SnO2, 1.5 parts of Ni2O3, 13 parts of SiO2、0.6 Part Cr2O3, 21 parts of Y2O3, 0.2 part of boric acid (20% boric acid ethanol solution), 1.2 parts of Nd2O3。
The preparation method of the dielectric material is as follows：
(1) main material and various additives are configured according to the above ratio.
(2) additive configured in proportion is placed in reaction kettle, deionized water is added and (accounts for additive gross mass 80%), while lauroyl glutamate is added as surfactant (account for additive gross mass 0.8%), cyclohexanone is added As diluent (account for additive gross mass 0.1%), and the sum of surfactant and diluent account for the ratio of additive gross mass Example is less than 1%, and 150r/min is stirred evenly under room temperature, obtains additive slurry.
(3) the main material ZnO configured in proportion is added in above-mentioned additive slurry, while silane coupling A 172 is added (account for additive gross mass 0.2%), 150r/min is stirred evenly under room temperature in a kettle, obtains dielectric paste.
(4) above-mentioned dielectric paste is placed in the ball mill with white stone, 250r/min ball millings 2h or so, at this time in slurry Solid particle average grain diameter is less than 1 μm, transfers in fixing mould and shapes, is finally placed in drying box and is dried at 110 DEG C, obtained To blocky idiosome (idiosome is diameter 15.0mm, the disc-shaped idiosome of thickness 3.0mm).
(5) above-mentioned blocky idiosome is placed in 1200 DEG C of sintering in Muffle furnace, obtains the medium material of the piezoresistor Material (finished product is diameter about 12.5mm, thickness about 2.1mm disc-shapeds material).
Embodiment 3
A kind of dielectric material of piezoresistor, the dielectric material are made of by weight following raw material：
110 parts of ZnO of main material, additive are as follows：0.6 part of Bi2O3, 1.2 parts of SnO2, 1.2 parts of Ni2O3, 10 parts of SiO2、0.5 Part Cr2O3, 19 parts of Y2O3, 0.2 part of boric acid (10% boric acid ethanol solution), 0.5 part of Nd2O3。
The preparation method of the dielectric material is as follows：
(1) main material and various additives are configured according to the above ratio.
(2) additive configured in proportion is placed in reaction kettle, deionized water is added and (accounts for additive gross mass 80%), while lauroyl glutamate is added as surfactant (account for additive gross mass 0.6%), acetone is added and makees For diluent (account for additive gross mass 0.2%), and the sum of surfactant and diluent account for the ratio of additive gross mass Less than 1%, 150r/min is stirred evenly under room temperature, obtains additive slurry.
(3) the main material ZnO configured in proportion is added in above-mentioned additive slurry, while silane coupling A 171 is added (account for additive gross mass 0.2%), 150r/min is stirred evenly under room temperature in a kettle, obtains dielectric paste.
(4) above-mentioned dielectric paste is placed in the ball mill with white stone, 200r/min ball millings 2h or so, at this time in slurry Solid particle average grain diameter is less than 1 μm, transfers in fixing mould and shapes, is finally placed in drying box and is dried at 110 DEG C, obtained To blocky idiosome (idiosome is diameter 15.0mm, the disc-shaped idiosome of thickness 3.0mm).
(5) above-mentioned blocky idiosome is placed in 1100 DEG C of sintering in Muffle furnace, obtains the medium material of the piezoresistor Material (finished product is diameter about 12.5mm, thickness about 2.1mm disc-shapeds material).
Comparative example 1
A kind of dielectric material of piezoresistor, the dielectric material are made of by weight following raw material：
100 parts of ZnO of main material, additive are as follows：0.5 part of Bi2O3, 0.8 part of SnO2, 0.8 part of Ni2O3, 9 parts of SiO2, 0.2 part Cr2O3, 0.1 part of boric acid (10% boric acid ethanol solution).
The preparation method of the dielectric material is as follows：
(1) main material and various additives are configured according to the above ratio.
(2) additive configured in proportion is placed in reaction kettle, deionized water is added and (accounts for additive gross mass 80%), while fatty alcohol polyoxyethylene ether ammonium sulfate is added as surfactant (account for additive gross mass 0.5%), adds Enter acetone as diluent (account for additive gross mass 0.3%), and the sum of surfactant and diluent account for the total matter of additive The ratio of amount is less than 1%, and 100r/min is stirred evenly under room temperature, obtains additive slurry.
(3) the main material ZnO configured in proportion is added in above-mentioned additive slurry, while silane coupling A 171 is added (account for additive gross mass 0.1%), 100r/min is stirred evenly under room temperature in a kettle, obtains dielectric paste.
(4) above-mentioned dielectric paste is placed in the ball mill with white stone, 200r/min ball millings 1h or so, at this time in slurry Solid particle average grain diameter is less than 1 μm, transfers in fixing mould and shapes, is finally placed in drying box and is dried at 105 DEG C, obtained To blocky idiosome (idiosome is diameter 15.0mm, the disc-shaped idiosome of thickness 3.0mm).
(5) above-mentioned blocky idiosome is placed in 1000 DEG C of sintering in Muffle furnace, obtains the medium material of the piezoresistor Material (finished product is diameter about 12.5mm, thickness about 2.1mm disc-shapeds material).
Test case 1
Make piezoresistive wafer using pressure-sensitive resistor medium material prepared by Examples 1 to 3 and comparative example 1, its two Face coats electrocondution slurry, in N2The lower sintering of protection, welding electrode lead, and using insulating resin encapsulating solidification, obtain pressure-sensitive Resistor disc.
Each 20 of piezoresistive wafer obtained is taken, is tested respectively, test result is as shown in table 1.
1 test result of table
As it can be seen from table 1 had good conductive property using piezoresistive wafer prepared by the dielectric material of the present invention, Higher nonlinear factor, lower Leakage Current, the material mixture ratio of embodiment 3 have the effect of more excellent.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments Invention is explained in detail, it will be understood by those of ordinary skill in the art that：It still can be to aforementioned each implementation Technical solution recorded in example is modified or equivalent replacement of some of the technical features；And these modification or It replaces, the spirit and scope for various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution.

Claims (7)

1. a kind of dielectric material of piezoresistor, which is characterized in that be made of the raw material of following weight parts：Main material ZnO 100~120 parts, additive is as follows：0.5~0.8 part of Bi2O3, 0.8~1.5 part of SnO2, 0.8~1.5 part of Ni2O3, 9~13 parts SiO2, 0.2~0.6 part of Cr2O3, 15~21 parts of Y2O3, 0.1~0.2 part of boric acid.
2. a kind of dielectric material of piezoresistor according to claim 1, which is characterized in that the additive further includes 0.5~1.2 part of Nd2O3。
3. a kind of dielectric material of piezoresistor according to claim 1, which is characterized in that the boric acid is concentration 10 ~20% boric acid ethanol solution.
4. a kind of preparation method of the dielectric material of piezoresistor described in claim 1, which is characterized in that including following step Suddenly：
Main material and various additives is respectively configured in step 1) in proportion；
The additive that step 1) configures is placed in reaction kettle by step 2), be added deionized water, while be added surfactant and Diluent, the surfactant account for the 0.5~0.8% of additive gross mass, and the diluent accounts for the 0.1 of additive gross mass ~0.3%, and the sum of surfactant and diluent account for the ratio of additive gross mass and are less than 1%, 100~150r/ under room temperature Min is stirred evenly, and obtains additive slurry；
Step 1) the main material is added in the step 2) additive slurry step 3), while coupling agent is added, the idol Connection agent accounts for the 0.1~0.2% of additive gross mass, and 100~150r/min is stirred evenly under room temperature in a kettle, obtains medium Slurry；
Step 3) the dielectric paste is placed in the ball mill with white stone by step 4), 200~250r/min, 1~2h of ball milling, It transfers in fixing mould and shapes, be finally placed in drying box and dried at 105~110 DEG C, obtain blocky idiosome；
Step 4) the blocky idiosome is placed in 1000~1200 DEG C of sintering in Muffle furnace by step 5), obtains the varistor The dielectric material of device.
5. a kind of preparation method of the dielectric material of piezoresistor according to claim 4, which is characterized in that the table Face activating agent is fatty alcohol polyoxyethylene ether ammonium sulfate or lauroyl glutamate.
6. a kind of preparation method of the dielectric material of piezoresistor according to claim 4, which is characterized in that described dilute It is acetone or cyclohexanone to release agent.
7. a kind of preparation method of the dielectric material of piezoresistor according to claim 4, which is characterized in that the idol It is silane coupling A 171 or A172 to join agent.
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Citations (5)

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Publication number Priority date Publication date Assignee Title
CN1165125A (en) * 1995-08-31 1997-11-19 松下电器产业株式会社 Zinc oxide ceramics composition and its manufacture method and zinc oxide nonlinear resistance
CN102020463A (en) * 2010-11-10 2011-04-20 中国科学院宁波材料技术与工程研究所 Zinc oxide piezoresistor material and preparing method thereof
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Application publication date: 20180904