CN108470831B - Flexible composite electrode structure, manufacturing method thereof and flexible electronic device - Google Patents
Flexible composite electrode structure, manufacturing method thereof and flexible electronic device Download PDFInfo
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- CN108470831B CN108470831B CN201810327063.6A CN201810327063A CN108470831B CN 108470831 B CN108470831 B CN 108470831B CN 201810327063 A CN201810327063 A CN 201810327063A CN 108470831 B CN108470831 B CN 108470831B
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
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Abstract
The invention provides a flexible composite electrode structure, a manufacturing method thereof and a flexible electronic device, wherein m layers of repairing layers and n layers of conducting layers are formed on a flexible substrate, the repairing layers and the conducting layers are alternately formed, the thicknesses of the repairing layer and the conducting layer are both in nanometer level, the repairing layer is made of conducting materials capable of automatically repairing nano cracks, n is a positive integer larger than or equal to 2, m is n +1, namely repair layers are arranged between the flexible substrate and the conductive layer, between a plurality of conductive layers and between the conductive layer and an external device, when the flexible electrode composite structure is damaged to generate nano cracks, the repairing layer can automatically repair the nano cracks and prevent the nano cracks from generating macrocracks, so that the reliability and the stability of the flexible electrode composite structure are improved, and the service life is prolonged.
Description
Technical Field
The invention relates to a flexible composite electrode structure, a manufacturing method thereof and a flexible electronic device.
Background
The flexible electronic device is a core device of the wearable electronic device, and the reliability of the wearable electronic device is directly affected by the stability of the performance and the length of the service life of the flexible electronic device. In a conventional flexible electronic device, for example, an organic field effect transistor, the electrodes include a source electrode, a drain electrode, a gate electrode, and a substrate electrode. The structure can be divided into four structures, namely bottom gate top contact, bottom gate bottom contact, top gate top contact and top gate bottom contact according to different positions of the electrodes. Flexible electronic devices use metals such as Cu (copper) or Al (aluminum) as the mainstream electrode material. However, it has been found that the stability and lifetime of these flexible electronic devices are less than ideal.
Disclosure of Invention
The invention aims to provide a flexible composite electrode structure, a manufacturing method thereof and a flexible electronic device, which can effectively repair cracks under the nanometer size, improve the reliability and stability of the flexible composite electrode structure and prolong the service life.
In order to achieve the above object, the present invention provides a method for manufacturing a flexible composite electrode structure, comprising the steps of:
providing a flexible substrate;
the method comprises the steps of forming m repairing layers and n conducting layers on the flexible substrate, wherein the repairing layers and the conducting layers are formed alternately, the thicknesses of the repairing layers and the conducting layers are both in a nanometer level, the repairing layers are made of conducting materials capable of automatically repairing nanometer cracks, n is a positive integer larger than or equal to 2, and m is n + 1.
Optionally, atoms in the repair layer can be displaced at the nano-cracks to repair the nano-cracks.
Optionally, the repair layer is a nickel layer, and the conductive layer is a metal layer containing one or more of gold, silver, copper, aluminum, platinum, or titanium.
Optionally, the repair layer and the conductive layer are formed by an atomic layer deposition method.
Optionally, the thickness of the m repairing layers is the same, and the thickness of the n conducting layers is the same.
Optionally, the thickness of the repair layer is less than 50nm, and the thickness of the conductive layer is less than 50 nm.
Correspondingly, the invention also provides a flexible composite electrode structure, comprising:
a flexible substrate;
the repairing layer and the conducting layer are alternately formed, the thicknesses of the repairing layer and the conducting layer are both in a nanometer level, the repairing layer is made of a conducting material capable of automatically repairing nano cracks, n is a positive integer larger than or equal to 2, and m is n + 1.
Optionally, atoms in the repair layer can be displaced at the nano-cracks to repair the nano-cracks.
Optionally, the repair layer is a nickel layer, and the conductive layer is a metal layer containing one or more of gold, silver, copper, aluminum, platinum, or titanium.
Optionally, the thickness of the m repairing layers is the same, and the thickness of the n conducting layers is the same.
Optionally, the thickness of the repair layer is less than 50nm, and the thickness of the conductive layer is less than 50 nm.
Correspondingly, the invention also provides a flexible electronic device comprising the flexible composite electrode structure.
Compared with the prior art, in the flexible composite electrode structure and the manufacturing method thereof as well as the flexible electronic device, m repairing layers and n conducting layers are formed on a flexible substrate, the repairing layers and the conducting layers are alternately formed, the thicknesses of the repairing layers and the conducting layers are both in nanometer level, the repairing layers are made of conducting materials capable of automatically repairing nano cracks, wherein n is a positive integer greater than or equal to 2, and m is n +1, namely, the repairing layers are arranged between the flexible substrate and the conducting layers, between the conducting layers and external devices, when the flexible electrode composite structure is damaged and nano cracks are generated, the repairing layers can automatically repair the nano cracks to prevent the nano cracks from being generated due to the aggravation of the nano cracks, so that the reliability and the stability of the flexible composite electrode structure are improved, the service life is prolonged.
Furthermore, the repair layer is a nickel layer, and the thickness of the nickel layer is in a nanometer level, nickel atoms at the grain boundary of the nickel layer can generate displacement at the nanometer crack near the grain boundary so as to release tensile stress or compressive stress generated inside, repair the nanometer crack and finally enable the nanometer crack to disappear.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a flexible composite electrode structure according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a flexible composite electrode structure according to an embodiment of the present invention.
Fig. 3a to 3b are schematic diagrams illustrating a repair layer repairing a nano crack according to an embodiment of the present invention.
Fig. 4a to 4b are schematic diagrams illustrating a bending direction and a stress type of a flexible electronic device according to an embodiment of the invention.
Detailed Description
The inventor researches and discovers that the stability and the service life of a metal electrode occupy important factors in reliability analysis of a flexible electronic device. This is because the flexible electronic device can be bent, and the metal electrode is subjected to tensile stress or compressive stress depending on the bending direction during the bending process. When the stress is accumulated to a certain degree, the metal electrode is cracked, so that the conductivity of the electrode is deteriorated, and even the electrode is opened. Moreover, the macro cracks of the electrodes can also influence the performance change of the functional layers of the connected devices, thereby reducing the reliability and stability of the flexible electronic devices.
In view of the above problems, the inventors have further studied and found that, from the viewpoint of micro-mechanism, the macrocracks exhibited by the metal electrodes are nano-micro-cracks (nano-cracks, i.e., cracks that can be seen only at the nano-scale) at the beginning of plastic deformation of the material, and gradually develop into macrocracks under the action of the continuous accumulation of stress. Therefore, how to effectively alleviate or repair the nano-cracks is a key factor for prolonging the service life of the metal electrode and improving the reliability of the metal electrode.
Based on the research, the invention provides a manufacturing method of a flexible composite electrode structure, which is characterized in that m repairing layers and n conducting layers are formed on a flexible substrate, the repairing layers and the conducting layers are alternately formed, the thicknesses of the repairing layers and the conducting layers are both in a nanometer level, the repairing layers are made of conducting materials capable of automatically repairing cracks under a nanometer scale, n is a positive integer larger than or equal to 2, and m is equal to n + 1.
In the manufacturing method of the flexible composite electrode structure, the repairing layers are arranged between the flexible substrate and the conducting layer, between the conducting layers and external devices, when the flexible electrode composite structure is damaged to generate nano cracks, the repairing layers can automatically repair the nano cracks, and prevent the nano cracks from generating macrocracks, so that the reliability and the stability of the flexible composite electrode structure are improved, and the service life is prolonged.
In order to make the contents of the present invention more clearly understood, the contents of the present invention will be further described with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention is described in detail with reference to the drawings, and for convenience of explanation, the drawings are not enlarged partially according to the general scale, and should not be construed as limiting the present invention.
Fig. 1 is a flowchart illustrating a method for manufacturing a flexible composite electrode structure according to an embodiment of the present invention. As shown in fig. 1, the present invention provides a method for manufacturing a flexible composite electrode structure, comprising the steps of:
step S100: providing a flexible substrate;
step S200: the method comprises the steps of forming m repairing layers and n conducting layers on the flexible substrate, wherein the repairing layers and the conducting layers are formed alternately, the thicknesses of the repairing layers and the conducting layers are both in a nanometer level, the repairing layers are made of conducting materials capable of automatically repairing nanometer cracks, n is a positive integer larger than or equal to 2, and m is n + 1.
In this embodiment, at least three repair layers and two conductive layers are formed, that is, the repair layer needs to be disposed between the conductive layers, so as to achieve the purpose of repairing the nano cracks. Preferably, n is more than or equal to 2 and less than or equal to 5, in this case, the nano cracks can be effectively repaired, and the cost rise caused by excessive layers can be avoided.
As described above, the flexible composite electrode structure first generates nano cracks before macro cracks are generated, and nano cracks are first generated at grain boundaries of the repair layer and the conductive layer. Preferably, atoms in the repair layer can automatically generate displacement at the nano-cracks, so that the nano-cracks are repaired, and finally the nano-cracks disappear, thereby preventing the nano-cracks from generating macrocracks due to the aggravation of the nano-cracks. More preferably, the repair layer is a nickel layer.
It should be noted that the thicknesses of the repair layer and the conductive layer are both on the nanometer scale, for example, several nanometers, tens of nanometers, or hundreds of nanometers. At the nanometer level, atoms in the repair layer can spontaneously generate displacement at the nanometer crack, and the nanometer crack is automatically repaired. Preferably, the thicknesses of the repair layer and the conductive layer are both less than 50nm, and at the thicknesses, atoms in the repair layer can generate displacement at the nano-crack more quickly, so that the repair efficiency of the nano-crack is improved.
Fig. 2 is a schematic structural diagram of a flexible composite electrode structure according to an embodiment of the present invention, please refer to fig. 1, and refer to fig. 2, to take the formation of four repair layers and three conductive layers as an example, to describe in detail the manufacturing method of the flexible composite electrode structure according to the present invention:
in step S100, a flexible substrate 10 is provided, where the flexible substrate 10 may be various flexible substrates including, but not limited to, PET (polyethylene terephthalate), PI (polyimide), PMMA (polymethyl methacrylate), elastic silicon, and the like, and various flexible devices may also be formed on the flexible substrate 10, which is not limited in this disclosure.
In step S200, first, a first repair layer 21 is formed on the flexible substrate 10, and a first conductive layer 31 is formed on the first repair layer 11.
In the present embodiment, the first repair layer 21 is preferably a nickel (Ni) layer, and the first conductive layer 31 is preferably a metal layer including, but not limited to, one or more of gold, silver, copper, aluminum, platinum, or titanium. Preferably, the thickness of the first repair layer 21 is less than 50nm, and the thickness of the first conductive layer 31 is less than 50 nm.
Preferably, the first repair layer 21 and the first conductive layer 31 are formed by an Atomic Layer Deposition (ALD) method, and the first repair layer 21 and the first conductive layer 31 may be formed in the same chamber or in different chambers. Of course, other methods known to those skilled in the art may be used to form the first repair layer 21 and the first conductive layer 31, and the first repair layer 21 and the first conductive layer 31 may be formed by different methods.
Next, the steps of forming the first repair layer 21 and the first conductive layer 31 are repeated, and the second repair layer 22 and the second conductive layer 32 are sequentially formed on the first conductive layer 31. The second repair layer 22 may be formed under the same process conditions as the first repair layer 21, and the second conductive layer 32 may be formed under the same process conditions as the first conductive layer 31. Of course, the second repair layer 22 and the first repair layer 21 may be formed under different process conditions, and the second conductive layer 32 and the first conductive layer 31 may also be formed under different process conditions. Preferably, the thickness of the second repair layer 22 is the same as the thickness of the first repair layer 21, and the thickness of the second conductive layer 32 is also the same as the thickness of the first conductive layer 31. It is understood that in other embodiments, the thickness of each repair layer or each conductive layer may vary.
Next, the steps of forming the first repair layer 21 and the first conductive layer 31 are repeated, and the third repair layer 23 and the third conductive layer 33 are sequentially formed on the second conductive layer 32.
Finally, a fourth repair layer 24 is formed on the third conductive layer 33. To this end, a total of four repair layers and three conductive layers are formed, namely a first repair layer 21, a first conductive layer 31, a second repair layer 22, a second conductive layer 32, a third repair layer 23, a third conductive layer 33 and a fourth repair layer 24, which are sequentially formed on the flexible substrate 10. The remaining external devices may also be formed on the fourth repair layer 24 thereafter. The repair layers are arranged between the flexible substrate and the conductive layers, between the conductive layers, and between the conductive layers and external devices. The four repair layers are preferably made of nickel, the three conductive layers are preferably made of metal including one or more of gold, silver, copper, aluminum, platinum and titanium, and the materials of the conductive layers can be the same or different.
In this embodiment, all the repair layers may have the same thickness, for example, all the repair layers are between 0nm and 50nm, that is, the repair layers have four layers with the same unit thickness. It should be understood that the thicknesses of all the silicon repair layers may also be different from each other, and may vary in a certain rule, such as increasing or decreasing with a certain thickness, for example, the thicknesses of the first repair layer 21, the second repair layer 22, the third repair layer 23, and the fourth repair layer 24 are 10nm, 20nm, 30nm, and 40nm in sequence. It should be understood that all the conductive layers may have the same thickness, for example, between 0nm and 50nm, i.e., the conductive layers have three layers with the same unit thickness. Of course, the thicknesses of all the conductive layers may also be different from each other, and may for example change in a certain rule, such as increasing or decreasing with a certain thickness, for example, the thicknesses of the first conductive layer 31, the second conductive layer 32 and the third conductive layer 33 are 20nm, 30nm and 40nm in sequence. However, the overall thickness of all repair layers and all conductive layers needs to meet the final requirements for the thickness of the flexible composite electrode structure.
A grain boundary is formed between the nickel layer and the metal layer, when the flexible composite electrode structure is bent, tensile stress is generated inside the nickel atomic layer when the nickel atomic layer is extended, compressive stress is generated inside the nickel atomic layer when the nickel atomic layer is shortened, the type of the stress is related to the bending direction, nano-scale microcracks are firstly generated at the boundary of the grain boundary under the stress action of the nickel atomic layer, as shown in fig. 3a, a multilayer nickel atomic layer 20 and a multilayer metal atomic layer 30 are schematically drawn in fig. 3a, and adjacent metal atomic layers are made of different materials, so that the shapes of the metal atomic layers are different. A nanocracture 40 is created between the nickel atomic layer 20 and the metal atomic layer 30. Such nano-cracks 40, if exacerbated, can produce macrocracks that can result in cracking or even opening of the conductive properties of the flexible composite electrode structure. However, the nickel atomic layer 20 has a special property that at the nano scale, the nickel atoms at the grain boundary can generate displacement at the nano cracks near the grain boundary to release the tensile stress or the compressive stress generated inside, repair the nano cracks, and finally make the nano cracks disappear, as shown in fig. 3 b. Thereby preventing the nanometer crack from aggravating to generate the macrocrack, improving the reliability and the stability of the flexible composite electrode structure and prolonging the service life.
In summary, in the manufacturing method of the flexible composite electrode structure provided by the invention, m repairing layers and n conducting layers are formed on the flexible substrate, the repairing layers and the conducting layers are alternately formed, the thicknesses of the repairing layer and the conducting layer are both in nanometer level, the repairing layer is made of conducting materials capable of automatically repairing cracks under nanometer scale, n is a positive integer larger than or equal to 2, m is n +1, namely repair layers are arranged between the flexible substrate and the conductive layer, between a plurality of conductive layers and between the conductive layer and an external device, when the flexible electrode composite structure is damaged to generate nano cracks, the repairing layer can automatically repair the nano cracks and prevent the nano cracks from generating macrocracks, so that the reliability and the stability of the flexible electrode composite structure are improved, and the service life is prolonged. The self-repairing process does not need any external action, is the spontaneous stress displacement of nano atoms, automatically repairs nano cracks and is complete self-repairing.
Correspondingly, the invention also provides a flexible composite electrode structure which is formed by adopting the method. The flexible composite electrode structure includes:
a flexible substrate;
the repairing layer and the conducting layer are alternately formed, the thicknesses of the repairing layer and the conducting layer are both in a nanometer level, the repairing layer is made of a conducting material capable of automatically repairing nano cracks, n is a positive integer larger than or equal to 2, and m is n + 1.
Specifically, referring to fig. 2, the flexible composite electrode structure includes a flexible substrate 10, and a first repair layer 21, a first conductive layer 31, a second repair layer 22, a second conductive layer 32, a third repair layer 23, a third conductive layer 33, and a fourth repair layer 24 sequentially formed on the flexible substrate 10. The repair layer is preferably a nickel layer and the conductive layer is preferably a metal layer including, but not limited to, one or more of gold, silver, copper, aluminum, platinum, or titanium. The materials of each conductive layer may be the same, may be different, or may be spaced the same.
Preferably, the thickness of each layer of the repair layer is less than 50nm, and the thickness of each layer of the conductive layer is less than 50 nm. Preferably, the thickness of each of the repair layers may be the same or different, or may vary in a certain rule, such as increasing or decreasing with a certain thickness. It will be appreciated that the thickness of each of the conductive layers may be the same or different, for example, varying regularly, such as increasing or decreasing with a certain thickness.
Correspondingly, the invention also provides a flexible electronic device comprising the flexible composite electrode structure. The flexible composite electrode structure may be applied to various locations of the flexible electronic device, including but not limited to source, drain, gate, or substrate electrodes.
Please refer to fig. 4a and 4b, which are schematic diagrams illustrating a bending direction and a stress type of a flexible electronic device according to an embodiment of the invention. As shown in fig. 4a and 4b, the flexible electronic device includes a flexible substrate 10, and a flexible electronic structure 50 formed on the flexible substrate 10, wherein the flexible electronic structure 50 is provided with a flexible composite electrode structure as described above. As shown in fig. 4a, when the flexible electronic device is bent upward (the flexible substrate 10 is bent to a side close to the flexible electronic structure 50), the flexible electronic structure 50 is elongated, and a tensile stress is generated inside the flexible electronic structure, and as shown in fig. 4b, when the flexible electronic device is bent downward (the flexible substrate 10 is bent to a side far from the flexible electronic structure 50), the flexible electronic structure 50 is shortened, and a compressive stress is generated inside the flexible electronic structure. The flexible electronic device bends upwards or downwards, and the flexible composite electrode structure bends at the same time, so as to further bend the nickel atomic layer, please refer to fig. 3a and 3b, the nickel atomic layer 20 generates nano-scale microcracks, namely the nano-cracks 40, at the boundary of the grain boundary under the stress action, and then the nickel atoms at the grain boundary generate displacement at the nano-cracks near the grain boundary, so as to release the tensile stress or the compressive stress generated inside, repair the nano-cracks, and finally make the nano-cracks disappear, thereby preventing the nano-cracks from generating macrocracks, thereby improving the reliability and stability of the flexible composite electrode structure, prolonging the service life, and finally improving the reliability and stability of the flexible electronic device, and prolonging the service life of the flexible electronic device.
In summary, in the flexible composite electrode structure, the manufacturing method thereof, and the flexible electronic device provided by the present invention, m repairing layers and n conductive layers are formed on a flexible substrate, and the thicknesses of the repairing layers and the conductive layers are both in nanometer level, the repairing layers and the conductive layers are alternately formed, the repairing layers are made of conductive materials capable of automatically repairing nano-scale cracks, wherein n is a positive integer greater than or equal to 2, and m is n +1, i.e., repairing layers are disposed between the flexible substrate and the conductive layers, between the conductive layers, and between the conductive layers and an external device, when a nano-crack is generated due to damage of the flexible electrode composite structure, the repairing layers can automatically repair the nano-crack, so as to prevent the nano-crack from being generated due to aggravation of the nano-crack, thereby improving the reliability and stability of the flexible macroscopic electrode structure, the service life is prolonged. Furthermore, the repair layer is a nickel layer, and the thickness of the nickel layer is in a nanometer level, nickel atoms at the grain boundary of the nickel layer can generate displacement at the nanometer crack near the grain boundary so as to release tensile stress or compressive stress generated inside, repair the nanometer crack and finally enable the nanometer crack to disappear.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method of manufacturing a flexible composite electrode structure, comprising the steps of:
providing a flexible substrate;
the method comprises the steps of forming m repairing layers and n conducting layers on a flexible substrate, wherein the repairing layers and the conducting layers are formed alternately, the thicknesses of the repairing layers and the conducting layers are both in a nanometer level, the repairing layers are made of conducting materials capable of automatically repairing nanometer cracks, a grain boundary is formed between the repairing layers and the conducting layers, atoms in the repairing layers can generate displacement at the nanometer cracks at the grain boundary so as to repair the nanometer cracks, n is a positive integer greater than or equal to 2, and m = n + 1.
2. The method of manufacturing a flexible composite electrode structure of claim 1, wherein the repair layer is a nickel layer and the conductive layer is a metal layer comprising one or more of gold, silver, copper, aluminum, platinum, or titanium.
3. The method of manufacturing a flexible composite electrode structure of claim 2, wherein the repair layer and the conductive layer are formed using an atomic layer deposition method.
4. The method of manufacturing a flexible composite electrode structure of claim 1, wherein the m repair layers are the same thickness and the n conductive layers are the same thickness.
5. The method of manufacturing a flexible composite electrode structure of claim 1, wherein the repair layer is less than 50nm thick and the conductive layer is less than 50nm thick.
6. A flexible composite electrode structure, comprising:
a flexible substrate;
the repairing layer and the conducting layer are alternately formed, the thicknesses of the repairing layer and the conducting layer are both in a nanometer level, the repairing layer is made of a conducting material capable of automatically repairing nano cracks, a grain boundary is formed between the repairing layer and the conducting layer, atoms in the repairing layer can generate displacement at the nano cracks at the grain boundary so as to repair the nano cracks, wherein n is a positive integer greater than or equal to 2, and m = n + 1.
7. The flexible composite electrode structure of claim 6, wherein the repair layer is a nickel layer and the conductive layer is a metal layer comprising one or more of gold, silver, copper, aluminum, platinum, or titanium.
8. The flexible composite electrode structure of claim 6, wherein the m repair layers are the same thickness and the n conductive layers are the same thickness.
9. The flexible composite electrode structure of claim 6, wherein the repair layer is less than 50nm thick and the conductive layer is less than 50nm thick.
10. A flexible electronic device comprising a flexible composite electrode structure according to any one of claims 6 to 9.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201457A (en) * | 2011-03-30 | 2011-09-28 | 湘潭大学 | Metal diffusion barrier layer between flexible metal substrate and back electrode of solar battery and fabrication method thereof |
| CN104992924A (en) * | 2015-07-01 | 2015-10-21 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display device and manufacturing method thereof |
| CN106409152A (en) * | 2016-09-26 | 2017-02-15 | 昆山工研院新型平板显示技术中心有限公司 | A metal wire, a metal wire self-repairing method and a flexible display screen |
| CN106549021A (en) * | 2016-12-02 | 2017-03-29 | 京东方科技集团股份有限公司 | Flexible display substrates, flexible display apparatus and its restorative procedure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI281586B (en) * | 2005-09-13 | 2007-05-21 | Ind Tech Res Inst | Pixel array |
| US9324606B2 (en) * | 2014-01-09 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned repairing process for barrier layer |
-
2018
- 2018-04-12 CN CN201810327063.6A patent/CN108470831B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201457A (en) * | 2011-03-30 | 2011-09-28 | 湘潭大学 | Metal diffusion barrier layer between flexible metal substrate and back electrode of solar battery and fabrication method thereof |
| CN104992924A (en) * | 2015-07-01 | 2015-10-21 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display device and manufacturing method thereof |
| CN106409152A (en) * | 2016-09-26 | 2017-02-15 | 昆山工研院新型平板显示技术中心有限公司 | A metal wire, a metal wire self-repairing method and a flexible display screen |
| CN106549021A (en) * | 2016-12-02 | 2017-03-29 | 京东方科技集团股份有限公司 | Flexible display substrates, flexible display apparatus and its restorative procedure |
Non-Patent Citations (1)
| Title |
|---|
| "Recovery of dislocation structures in pllalstically deformed copper and nickel single crystals";F. Prinz 等;《Acta Metallurgica》;20030611;第30卷(第4期);821-830 * |
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