CN108470779A - A kind of photovoltaic refraction type reflective film - Google Patents
A kind of photovoltaic refraction type reflective film Download PDFInfo
- Publication number
- CN108470779A CN108470779A CN201810398764.9A CN201810398764A CN108470779A CN 108470779 A CN108470779 A CN 108470779A CN 201810398764 A CN201810398764 A CN 201810398764A CN 108470779 A CN108470779 A CN 108470779A
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- China
- Prior art keywords
- photovoltaic
- light source
- film
- refraction type
- layer
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000011159 matrix material Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000007711 solidification Methods 0.000 claims abstract description 17
- 230000008023 solidification Effects 0.000 claims abstract description 17
- 230000007704 transition Effects 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 238000013461 design Methods 0.000 claims abstract description 8
- 238000007334 copolymerization reaction Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 150000001408 amides Chemical class 0.000 claims description 4
- 239000012943 hotmelt Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229920000098 polyolefin Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 238000010248 power generation Methods 0.000 abstract description 10
- 238000012546 transfer Methods 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
It is disclosed by the invention to belong to Photovoltaic new energy technical field,Specially a kind of photovoltaic refraction type reflective film,Including film matrix,The upper surface of the film matrix is provided with UV resin transition zones,Laterally consecutive be distributed in the upper surface of the UV resins transition zone can need the UV of left and right offset to cure triangle convex by vertical equity face according to design,The top of the UV solidifications triangle convex is provided with metal reflective refracting layer,The upper surface of the metal reflective refracting layer forms refraction reflective surface,It is maximally utilized as direction with Light Source Compensation and light source,Set about changing existing solar power generation Light Source Compensation problem,To increase solar power generation cell piece intensity of illumination and area,Reduce the transfer efficiency loss for being limited and being brought by external light source,Single light source can be amplified and be reflected into multiple tracks light source,And it is refracted as 180 ° in a manner of unique and is distributed to cell piece surface,It forms strong Light Source Compensation and higher transfer efficiency is obtained with this.
Description
Technical field
The present invention relates to Photovoltaic new energy technical field, specially a kind of photovoltaic refraction type reflective film.
Background technology
Solar cell is a kind of very promising novel power supply, it has permanent, spatter property and flexibility three big
Advantage.Solar battery life is long, as long as the sun exists, solar cell can be invested once and is used for a long time;With firepower
Power generation, nuclear energy power generation are compared, and solar cell will not cause environmental pollution;Solar cell can conveniently realize large, medium and small
Combination, the big medium-sized power station for arriving gigawatt, the small solar battery group to only for a family, this is that other power supplys can not
Analogy.
Cell piece as photovoltaic module core has been the emphasis of entire photovoltaic industry concern, existing cell piece power generation by
Light source limitation (cloudy day, night and light transmittance), transition loss (loss of power Transmission process) and surface area (front side conductive line
Shading light part) influence its generating efficiency only with 20%, the experimental data highest in laboratory also can only achieve 25% conversion
Efficiency.
Original reflective solder strip is not high to the acceptance rate of luminous energy, and the changing effect of energy is bad, to influence luminous energy just
Normal power generation effect, for this purpose, we have proposed a kind of photovoltaic refraction type reflective films.
Invention content
The purpose of the present invention is to provide a kind of photovoltaic refraction type reflective films, to solve to propose in above-mentioned background technology
Original reflective solder strip it is not high to the acceptance rate of luminous energy, the changing effect of energy is bad, to influence the normal power generation of luminous energy
The problem of effect.
To achieve the above object, the present invention provides the following technical solutions:A kind of photovoltaic refraction type reflective film, including it is thin
The bottom of film matrix, the film matrix is connected with adhering film layer, and the upper surface of the film matrix is provided with UV resin mistakes
Layer is crossed, laterally consecutive be distributed in the upper surface of the UV resins transition zone can need left and right offset by vertical equity face according to design
UV cure triangle convex, the top of UV solidification triangle convex is provided with metal reflective refracting layer, the metal reflective folding
The shape for penetrating layer is adapted with the UV of film matrix upper surface solidification triangle convexs, the upper surface of the metal reflective refracting layer
Form refraction reflective surface.
Preferably, the thickness of the film matrix, width are respectively 0.01-0.5mm, 0.5-50mm.
Preferably, the thickness of the adhering film layer is 0.01-0.1mm, and the adhering film layer uses polyurethane, gathers
One or more hot melt materials composition in alkene, copolymerization fat, copolymerization acid amide and vinyl acetate.
Preferably, UV solidification triangle convex, metal reflective refracting layer the angle of upper end angle be 100-
150 °, it is 1-90 ° that the vertical equity face of the UV solidifications triangle convex needs left and right deviation angle according to design.
Preferably, the top of the UV solidifications triangle convex is transition arc or is apex angle, the half of the transition arc
Diameter is 0-0.1mm.
Preferably, the thickness of the metal reflective refracting layer is 0.0001-0.05mm.
Compared with prior art, the beneficial effects of the invention are as follows:A kind of photovoltaic refraction type reflective that the invention proposes
Film is maximally utilized with Light Source Compensation and light source as direction, sets about changing existing solar power generation Light Source Compensation problem, rationally
Light source is fully maximally utilized, to increase solar power generation cell piece intensity of illumination and area, reduction is limited by external light source
And the transfer efficiency loss brought, photovoltaic is utilized with refraction type reflective film to be absorbed, reflects, reflective mechanism, can be by single light
Source amplification is reflected into multiple tracks light source, and is refracted as 180 ° in a manner of unique and is distributed to cell piece surface, forms strong light source
Compensation obtains higher transfer efficiency with this.
Description of the drawings
Fig. 1 is schematic structural view of the invention;
Fig. 2 is the portions the A enlarged drawing of Fig. 1 of the present invention;
Fig. 3 is that expansion structural point of the present invention deviates schematic diagram;
Fig. 4 is the portions Fig. 3 I of the present invention enlarged drawing;
Fig. 5 is Fig. 4 B-B sectional views of the present invention;
Fig. 6 is expansion structural schematic diagram of the present invention.
In figure:1 film matrix, 2 adhering film layers, 3UV solidifications triangle convex, 4 metal reflective refracting layers, 5 refractions are reflective
Face, 6UV resin transition zones.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
- 6 are please referred to Fig.1, the present invention provides a kind of technical solution:A kind of photovoltaic refraction type reflective film, including film base
Body 1, film matrix 1 are made of polycarbonate plastic, polyethylene terephthalate plastics or resinae plastics, film base
The bottom of body 1 is connected with adhering film layer 2, adhering film layer 2 can by hot melt material such as polyurethane (TPU), polyolefin (PO),
It is copolymerized the hot melt materials composition such as fat (PES), copolymerization acid amide (PA) vinyl acetate (EVA), the upper surface setting of film matrix 1
There is UV resins transition zone 6, laterally consecutive be distributed in the upper surface of UV resins transition zone 6 can be by vertical equity face according to design needs
The UV that left and right deviates cures triangle convex 3, if the cross section of UV solidification triangle convexs 3, which includes that stem structure is identical, repeats list
Member, each repetitive unit is vertex upwards and arrangement can need 1-90 ° of left and right offset by vertical equity face according to design
The top of isosceles triangle, UV solidification triangle convexs 3 is provided with metal reflective refracting layer 4, metal reflective refracting layer 4 by silver,
Zinc, aluminium, nickel, chromium, etc. metallic elements (virgin metal material) be made or the alloy of above-mentioned material is made, metal reflective refracting layer 4
Shape is adapted with the UV of 1 upper surface of film matrix solidification triangle convexs 3, and the upper surface of metal reflective refracting layer 4 forms refraction
Reflective surface 5.
Wherein, the thickness of film matrix 1, width are respectively 0.01-0.5mm, 0.5-50mm, the thickness of adhering film layer 2
For 0.01-0.1mm, UV cures triangle convex 3, the angle of upper end angle of metal reflective refracting layer 4 is 100-150 °, UV
It is 1-90 ° that the vertical equity face of solidification triangle convex 3 needs left and right deviation angle according to design, and UV cures the top of triangle convex 3
For transition arc or it is apex angle, the radius of transition arc is 0-0.1mm, and the thickness of metal reflective refracting layer 4 is 0.0001-
0.05mm。
At work, the height of UV solidifications triangle convex 3 can be designed as 1 thickness of film matrix according to actual operation requirements
The height of the 1%-50% of degree, film matrix 1 are 0.09mm, if the cross section of UV solidification triangle convexs 3 includes that stem structure is identical
Repetitive unit, each repetitive unit be vertex upwards arrangement can by the offset of 1-90 ° or so of vertical equity face etc.
Lumbar triangle shape plays the formation of the refraction reflective surface 5 on face using UV solidification triangle convexs 3 and is mutually reflected and repeats refraction, and light source exists
Constantly expanding under reflection and the refraction that interlocks and divide and is spread to surrounding, 180 ° of light sources of formation rationally fully maximally utilize light source, from
And increase solar power generation cell piece intensity of illumination and area, reduce the transfer efficiency damage for being limited and being brought by external light source
Consumption, forms strong Light Source Compensation and obtains higher transfer efficiency with this.
Embodiment
The parameter of (1) first group of each structure of selection is specially:
The thickness of film matrix 1, width, height are respectively 0.01mm, 1mm, 0.09mm;
The thickness of adhering film layer 2 is 0.01mm;
The angle that UV cures 3 upper end angle of triangle convex is 110 °;
UV cures the arrangement of triangle convex 3 can be moved 40 ° of isosceles triangle by vertical equity face left avertence;
The thickness of metal reflective refracting layer 4 is 0.0001mm.
The parameter of (2) second groups of each structures of selection is specially:
The thickness of film matrix 1, width, height are respectively 0.011mm, 25.5mm, 0.09mm;
The thickness of adhering film layer 2 is 0.55mm;
The angle that UV cures 3 upper end angle of triangle convex is 120 °;
UV cures the arrangement of triangle convex 3 can be moved 40 ° of isosceles triangle by vertical equity face left avertence;
The thickness of metal reflective refracting layer 4 is 0.02505mm.
(3) parameter that third group chooses each structure is specially:
The thickness of film matrix 1, width, height are respectively 0.013mm, 50mm, 0.09mm;
The thickness of adhering film layer 2 is 0.1mm;
The angle that UV cures 3 upper end angle of triangle convex is 135 °;
UV cures the arrangement of triangle convex 3 can be moved 40 ° of isosceles triangle by vertical equity face left avertence;
The thickness of metal reflective refracting layer 4 is 0.05mm.
Photovoltaic generation experiment is carried out according to the parameter of above three groups of selections, experimental result obtains:First group of scheme receives
Optical surface product is smaller, and Generation Rate is relatively low, and second group of scheme reception optical surface product is larger, and Generation Rate is higher, the scheme of third group
Optical surface product maximum is received, refractive index is relatively low, and Generation Rate is relatively low, according to above three groups of embodiments, it is reason to believe that structure
Optimal parameter is in the parameter selection range of this programme.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (6)
1. a kind of photovoltaic refraction type reflective film, including film matrix (1), it is characterised in that:The bottom of the film matrix (1)
It is connected with adhering film layer (2), the upper surface of the film matrix (1) is provided with UV resins transition zone (6), the UV resins mistake
Crossing laterally consecutive be distributed in upper surface of layer (6) can need the UV of left and right offset to cure triangle convex by vertical equity face according to design
(3), the top of the UV solidification triangle convexs (3) is provided with metal reflective refracting layer (4), the metal reflective refracting layer (4)
The UV solidification triangle convexs (3) of shape and film matrix (1) upper surface be adapted, the metal reflective refracting layer (4) it is upper
Surface forms refraction reflective surface (5).
2. a kind of photovoltaic refraction type reflective film according to claim 1, it is characterised in that:The film matrix (1)
Thickness, width are respectively 0.01-0.5mm, 0.5-50mm.
3. a kind of photovoltaic refraction type reflective film according to claim 1, it is characterised in that:The adhering film layer (2)
Thickness be 0.01-0.1mm, the adhering film layer (2) is using polyurethane, polyolefin, copolymerization fat, copolymerization acid amide and acetic acid second
One or more hot melt materials composition in alkene fat.
4. a kind of photovoltaic refraction type reflective film according to claim 1, it is characterised in that:The UV cures triangle convex
(3), the angle of the upper end angle of metal reflective refracting layer (4) is 100-150 °, the longitudinal direction of the UV solidification triangle convexs (3)
It is 1-90 ° that horizontal plane needs left and right deviation angle according to design.
5. a kind of photovoltaic refraction type reflective film according to claim 1, it is characterised in that:The UV cures triangle convex
(3) top is transition arc or is apex angle, and the radius of the transition arc is 0-0.1mm.
6. a kind of photovoltaic refraction type reflective film according to claim 1, it is characterised in that:The metal reflective refracting layer
(4) thickness is 0.0001-0.05mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810398764.9A CN108470779A (en) | 2018-04-28 | 2018-04-28 | A kind of photovoltaic refraction type reflective film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810398764.9A CN108470779A (en) | 2018-04-28 | 2018-04-28 | A kind of photovoltaic refraction type reflective film |
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Publication Number | Publication Date |
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CN108470779A true CN108470779A (en) | 2018-08-31 |
Family
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CN201810398764.9A Pending CN108470779A (en) | 2018-04-28 | 2018-04-28 | A kind of photovoltaic refraction type reflective film |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110071179A (en) * | 2019-03-22 | 2019-07-30 | 无锡市诺岩信科技有限公司 | A kind of anti-dazzle light reflective film of photovoltaic module |
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CN103681923A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Oblique type reflective welding strip |
CN103681924A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Refraction type reflective welding belt |
CN203707148U (en) * | 2013-12-26 | 2014-07-09 | 无锡市斯威克科技有限公司 | Refraction type reflection solder band |
CN107527966A (en) * | 2017-10-12 | 2017-12-29 | 无锡市斯威克科技有限公司 | A kind of photovoltaic refraction type reflective film |
CN207250542U (en) * | 2017-10-12 | 2018-04-17 | 无锡市斯威克科技有限公司 | A kind of photovoltaic refraction type reflective film |
-
2018
- 2018-04-28 CN CN201810398764.9A patent/CN108470779A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103681923A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Oblique type reflective welding strip |
CN103681924A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Refraction type reflective welding belt |
CN203707148U (en) * | 2013-12-26 | 2014-07-09 | 无锡市斯威克科技有限公司 | Refraction type reflection solder band |
CN107527966A (en) * | 2017-10-12 | 2017-12-29 | 无锡市斯威克科技有限公司 | A kind of photovoltaic refraction type reflective film |
CN207250542U (en) * | 2017-10-12 | 2018-04-17 | 无锡市斯威克科技有限公司 | A kind of photovoltaic refraction type reflective film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110071179A (en) * | 2019-03-22 | 2019-07-30 | 无锡市诺岩信科技有限公司 | A kind of anti-dazzle light reflective film of photovoltaic module |
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Application publication date: 20180831 |
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