CN108441963B - A kind of application in telluride platinum two-dimensional material, preparation and its electricity device - Google Patents
A kind of application in telluride platinum two-dimensional material, preparation and its electricity device Download PDFInfo
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- CN108441963B CN108441963B CN201810218839.0A CN201810218839A CN108441963B CN 108441963 B CN108441963 B CN 108441963B CN 201810218839 A CN201810218839 A CN 201810218839A CN 108441963 B CN108441963 B CN 108441963B
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 379
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 171
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims abstract description 165
- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 53
- 230000005611 electricity Effects 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 49
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000012159 carrier gas Substances 0.000 claims abstract description 26
- 230000004907 flux Effects 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 11
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 81
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 28
- 239000003708 ampul Substances 0.000 claims description 27
- 238000011144 upstream manufacturing Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000002135 nanosheet Substances 0.000 abstract description 110
- 230000003287 optical effect Effects 0.000 abstract description 30
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 64
- 229910052573 porcelain Inorganic materials 0.000 description 46
- 229910052786 argon Inorganic materials 0.000 description 32
- 229910052681 coesite Inorganic materials 0.000 description 29
- 229910052906 cristobalite Inorganic materials 0.000 description 29
- 239000000377 silicon dioxide Substances 0.000 description 29
- 229910052682 stishovite Inorganic materials 0.000 description 29
- 229910052905 tridymite Inorganic materials 0.000 description 29
- 238000010586 diagram Methods 0.000 description 28
- 239000000843 powder Substances 0.000 description 26
- 230000012010 growth Effects 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 241000209094 Oryza Species 0.000 description 13
- 235000007164 Oryza sativa Nutrition 0.000 description 13
- 235000009566 rice Nutrition 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 230000021332 multicellular organism growth Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to field of nano material preparation, specifically disclose a kind of telluride platinum two-dimensional material, are telluride nano sheets of platinum.The present invention also provides a kind of preparation methods of telluride platinum two-dimensional material, by tellurium powder not less than 410 DEG C temperature, platinum powder 1000~1170 DEG C at a temperature of volatilize, the tellurium and platinum that will volatilize are in the carrier gas flux of 50~400sccm, telluride nano sheets of platinum is made in substrate surface in chemical vapor deposition at 350-720 DEG C.The invention also includes telluride platinum two-dimensional material made from the preparation method and using the telluride platinum two-dimensional material in optical device, especially PtTe2Application in field effect transistor.Telluride nano sheets of platinum pattern prepared by the present invention is well hexagon and triangle, and with a thickness of 2-40nm, size is at 1.5-52 μm, good crystallinity, preparation method simple possible.
Description
Technical field
The invention belongs to field of nanometer material technology, and in particular to telluride platinum two-dimensional material is prepared and its in electricity device
Using.
Technical background
Since graphene in 20041-3Prepared by success, it was demonstrated that two-dimensional material can be stabilized in nature, also be opened
The research boom of two-dimensional nano material.Graphene is a kind of two-dimensional material of monoatomic layer, because its electricity, mechanics, calorifics and
Optics etc. all has excellent property and has attracted the very big concern of whole world scientist.But mono-layer graphite is dilute to be not present band
Gap, this allow for it in logic circuits application be restricted.In order to make up the deficiency of zero band gap of graphene, scientist starts
Find other compounds with similar layer structure feature, such as hexagonal boron nitride (h-BN)4, transient metal sulfide
(TMDs)5-7And black phosphorus8Deng.
Has ergastic two-dimensional material to further explore other, the research about metallized metal transient metal sulfide
Also it is gradually reported.Telluride platinum has expanded two-dimensional material family as stratified material, and the telluride nano sheets of platinum has been expanded newly
Two-dimensional material, can be applied to spintronics and quantum calculation, spin-torque device and on piece is electrically interconnected and electricity device
Be prepared as find that new electronic device and equipment provides new possibility.
Although telluride platinum has so big potential, there is presently no the method that report prepares two-dimentional telluride nano sheets of platinum,
Including preparing multi-thickness, the two-dimentional telluride nano sheets of platinum of morphological rules and good crystallinity is not yet studied.Existing physics and
Chemical preparation process is mostly telluride Pt nanoparticle and body material monocrystalline9,10。
Bibliography
1.Novoselov,K.S.；Geim,A.K.；Morozov,S.V.；Jiang,D.；Zhang,Y.；Dubonos,
S.V.；Grigorieva,I.V.；Firsov,A.A.Science 2004,306,666.
2.Zhou,H.；Yu,W.J.；Liu,L.；Cheng,R.；Chen,Y.；Huang,X.；Liu,Y.；Wang,Y.；
Huang,Y.；Duan,X.Nat.Commun.2013,4,2096.
3.Wang,X.；Ouyang,Y.；Li,X.；Wang,H.；Guo,J.；Dai,H.Phys.Rev.Lett.2008,
100,206803.
4.Behura,S.；Nguyen,P.；Che,S.；Debbarma,R.；Berry,V.J.Am.Chem.Soc.2015,
137,13060.
5.Li,B.；Huang,L.；Zhong,M.；Li,Y.；Wang,Y.；Li,J.；Wei,
Z.Adv.Electron.Mater.2016,2,1600298.
6.Li,B.；Xing,T.；Zhong,M.；Huang,L.；Lei,N.；Zhang,J.；Li,J.；Wei,
Z.Nat.Commun.2017,8,1958.
7.Ai,R.；Guan,X.；Li,J.；Yao,K.；Chen,P.；Zhang,Z.；Duan,X.；Duan,X.ACS Nano
2017,11,3413.
8.Abbas,A.N.；Liu,B.；Chen,L.；Ma,Y.；Cong,S.；Aroonyadet,N.；M.；
Nilges,T.；Zhou,C.ACSNano 2015,9,5618.
9.Yan,M.；Huang,H.；Zhang,K.；Wang,E.；Yao,W.；Deng,K.；Wan,G.；Zhang,H.；
Arita,M.；Yang,H.；Sun,Z.；Yao,H.；Wu,Y.；Fan,S.；Duan,W.；Zhou,S.Nat.Commun.2017,8,
257.
10.Fernández-Lodeiro,J.；Rodríguez-Gónzalez,B.；Novio,F.；Fernández-
Lodeiro,A.；Ruiz-Molina,D.；Capelo,J.L.；Santos,A.A.d.；Lodeiro,C.Sci.Rep.2017,7,
9889.
Summary of the invention
It is an object of the present invention to solve, there are no two-dimentional telluride nano sheets of platinum is prepared, (present invention is also referred to as tellurium
Change platinum two-dimensional material；Also referred to as nanometer sheet) preparation method, it is desirable to provide a kind of preparation method of telluride platinum two-dimensional material,
Purpose is to stablize obtained telluride platinum two-dimensional material.
The second object of the present invention is to provide using telluride platinum two-dimensional material made from the preparation method, specific to wrap
Include the telluride nano sheets of platinum of obtained various thickness and size.
The third object of the present invention is to provide the application of telluride platinum two-dimensional material made from the preparation method, is answered
Preparation for electricity utensil；And then support is provided for preparation telluride platinum two-dimensional device.
The present invention provides a kind of telluride platinum two-dimensional materials, are telluride nano sheets of platinum.
Preferably, the telluride platinum two-dimensional material, is flaky telluride platinum mono-crystalline structures.
Preferably, the telluride platinum two-dimensional material with a thickness of 2-40nm.The full-size of telluride platinum two-dimensional material
(planar dimension) can achieve 52 μm；The planar dimension of telluride platinum two-dimensional material is preferably 1.5-52 μm.
Preferably, the telluride nano sheets of platinum has the regular morphology of triangle or hexagon.
The number of plies of the telluride platinum two-dimensional material is 3-100.
The present invention also provides a kind of preparation method of telluride platinum two-dimensional material, by tellurium powder not less than 410 DEG C temperature,
Platinum powder 1000~1170 DEG C at a temperature of volatilize, carrier gas flux, 350-720 of the tellurium and platinum that will volatilize in 50~400sccm
Telluride nano sheets of platinum is made in substrate surface in chemical vapor deposition at DEG C.
In the present invention, in the collaboration of growth temperature (volatilization temperature), carrier gas flux and chemical vapor deposition temperature
Under, it can innovatively be made with good pattern, with a thickness of nanoscale nanometer sheet.The method of the present invention not only can successfully be made
Telluride platinum two-dimensional material, the thickness for the telluride nano sheets of platinum that can be prepared with artificial adjustment can get with a thickness of 2-40nm, maximum
Size can achieve 52 μm, the good telluride platinum two-dimensional material of number of plies dimensional controllability.
The inventors discovered that when preparing telluride nano sheets of platinum, in suitable growth temperature (volatilization temperature), carrier gas flux
And at a temperature of the partial size and chemical vapor deposition of platinum powder, facilitate the pattern for improving telluride nano sheets of platinum obtained, control is received
Rice piece thickness, the crystal property for improving material etc..
The present inventor is the study found that the partial size of platinum powder has larger impact to the two-dimensional material is successfully made.As
It is preferred that partial size≤1 μm of platinum powder.Under the preferred particle size range, and other parameter Collaborative Controls, be conducive to successfully be made
The telluride nano sheets of platinum.
Preferably, the volatilization temperature of tellurium powder is 410~500 DEG C；Further preferably 410~440 DEG C；Most preferably
410~430 DEG C.Under the preferred volatilization temperature, the topography uniformity of obtained telluride nano sheets of platinum is good, and crystal property is more
Excellent, the thickness of obtained nanometer sheet is moderate.
The partial size of tellurium powder does not specially require, preferably, the partial size of tellurium powder powder is 38-74 μm.
Research also found that platinum powder volatilization temperature is higher than the upper limit of selected range, and obtained part telluride platinum is thick and irregular；
Lower than the preferable temperature lower limit, obtained nanometer chip size is minimum.Preferably, the volatilization temperature of platinum powder be 1100~
1170℃.Under the preferred volatilization temperature, the topography uniformity of obtained telluride nano sheets of platinum is good, and crystal property is more excellent, obtains
The thickness of the nanometer sheet arrived is moderate.
Further preferably, the volatilization temperature of platinum powder is 1100~1150 DEG C.
The carrier gas is protective atmosphere, preferably argon gas.
Carrier gas flux is higher than the preferred range limit of institute, has many impurity little particles around obtained nanometer sheet；Flow is low
In the preferred flux lower limit, obtained nanometer chip size is too small.Preferably, the flow of carrier gas is 100~400sccm；
Further preferably 120-300sccm.
Research also found, when base reservoir temperature (chemical vapor deposition temperature) is relatively low, the telluride nano sheets of platinum of preparation
Size too, less than 1.5 μm；When base reservoir temperature is larger, the telluride nano sheets of platinum of preparation is very thick and irregular.Preferably, tellurium
The preparation method for changing platinum two-dimensional material, the temperature range (chemical vapor deposition temperature) where substrate are 350-720 DEG C.Namely
Be, by carrier gas carry tellurium and platinum 350-720 DEG C at a temperature of chemical vapor deposition on the surface of substrate；In the substrate of invention
In temperature range, facilitates deposition and obtain that size is big, and thickness is thin, two-dimensional material of good performance.
Further preferably, the temperature of chemical vapor deposition is 480-620 DEG C.In the preferred chemical vapor deposition temperature
Under, pattern, the thickness of obtained nanometer sheet are more suitable for, and material property is more excellent.
Preferably, in the preparation method, temperature by tellurium powder powder at 410~440 DEG C, Ultrafine Platinum Powder powder exists
1100~1170 DEG C, vapor deposition forms telluride platinum in substrate surface in substrate surface under the carrier gas flux of 100~400sccm
Nanometer sheet.
Further preferably, during preparing telluride nano sheets of platinum, the preferred evaporating temperature of tellurium powder powder is 410~440
DEG C, the preferred evaporating temperature of Ultrafine Platinum Powder powder is 1100~1170 DEG C；Preferred carrier gas flux is 100-400sccm；At this
Under the collaboration of preferred growth temperature and carrier gas flux, good topography uniformity, good crystallinity and thickness can be made and can be controlled in and receive
The telluride nano sheets of platinum of meter level.
Most preferably, during preparing telluride nano sheets of platinum, the preferred growth temperature of tellurium powder powder is 410~430 DEG C, is surpassed
The thin preferred growth temperature of platinum powder powder is 1100~1150 DEG C；Preferred carrier gas flux is 120-300sccm.
In the present invention, during preparing telluride nano sheets of platinum, under the preferred growth temperature and carrier gas flux, change
Learning vapor deposition times is preferably 20-30min；Further preferably 20-25min.
In the present invention, by the selection of the substrate in vapor deposition, preparation method of the present invention can be used in difference
Telluride nano sheets of platinum material is prepared in substrate, to obtain can satisfy the material of different use demands.
Preferably, the substrate is SiO2/ Si substrate, sapphire substrates or mica substrate；Further preferably
300nm SiO2/ Si substrate.
A kind of preparation method of preferred telluride nano sheets of platinum of the present invention, by telluride platinum powder end at 410-430 DEG C；120-
The carrier gas flux of 300sccm；The temperature of substrate is at 480-620 DEG C, to obtain crystal growth temperature appropriate；Vapor deposition exists
300nm SiO2/ Si substrate surface constant temperature deposits 20-25min, to form telluride nano sheets of platinum in substrate surface.
The invention also includes telluride nano sheets of platinum made from the method, and with a thickness of 2-40nm, size is 1.5-52 μm.
The telluride nano sheets of platinum has the regular morphology of triangle and hexagon, and crystallinity is high.
The telluride nano sheets of platinum that the present invention is prepared with aumospheric pressure cvd is with a thickness of 2-40nm.The method of the present invention operation
It is easier, and the form of product obtained is excellent.
Using method of the present invention, telluride platinum two-dimensional nano sheet material is successfully synthesized for the first time.
The present invention implements the vapor phase growing apparatus of the preparation method, the quartz ampoule including sealing, the quartz ampoule
One end setting is provided with for inputting the entrance of carrier gas, the other end (preferably opposite end) into quartz ampoule chamber for exporting stone
The outlet of English pipe gas to chamber；According to carrier gas stream direction, the chamber of the quartz ampoule is divided into upstream temperature-varying zone, high-temperature constant
Warm area and downstream temperature-varying zone；Wherein, the magnetic boat equipped with platinum powder is placed on high-temperature constant warm area, and the magnetic boat equipped with tellurium powder is placed upstream and become
Warm area, substrate are placed on downstream temperature-varying zone；The vapor phase growing apparatus is additionally provided with to the heating of quartz ampoule high-temperature constant warm area
Heating device.
The high-temperature constant warm area (middle part for being usually located at quartz ampoule) of the heating devices heat quartz ampoule；Not heated dress
The temperature for setting the region of heating changes due to the effect of carrier gas and the length at a distance from high-temperature constant warm area, is commonly called as alternating temperature
Area, wherein being upstream temperature-varying zone close to the temperature-varying zone of carrier gas inlet one end, the temperature-varying zone positioned at carrier gas outlet end is downstream alternating temperature
Area.The distance of distance high-temperature flat-temperature zone is longer, and temperature damping is bigger, and temperature is lower；On the contrary, close to the distance of high-temperature constant warm area
Shorter, temperature that is to say the temperature value of reaction unit setting closer to the temperature of high-temperature constant warm area.
A kind of method of preferred telluride nano sheets of platinum of the present invention, specific steps are as follows:
The porcelain boat for filling Ultrafine Platinum Powder powder is put in the flat-temperature zone of stove by step 1), and the porcelain boat for filling tellurium powder powder is put
The temperature-varying zone for being 410-430 DEG C in upstream, by 300nm SiO2/ Si is placed in the downstream that temperature is 480-620 DEG C as substrate and becomes
Warm area, and stove both ends are encapsulated；
The atmosphere that step 2) is passed through a certain amount of argon gas to system into stove is pure argon environment；
Stove is increased to 1100-1150 DEG C by step 3), and adjusting argon flow is 120-300sccm, constant temperature 20-
25min generates telluride nano sheets of platinum on silicon wafer；
Stove is cooled to room temperature after step 4) constant temperature, takes out the silicon wafer for being deposited with telluride nano sheets of platinum.
The invention also includes the applications of telluride platinum two-dimensional material described made from one kind, are applied to electricity device
In preparation.
Preferably, telluride nano sheets of platinum obtained by the present invention is used to prepare PtTe2Field effect transistor.
Preferably, the PtTe2Field effect transistor the preparation method comprises the following steps: having the base of telluride nano sheets of platinum in growth
It is exposed on bottom with electron beam and marks sample, then obtain PtTe using vacuum coating equipment deposited metal2Field effect transistor.The party
Method operating process is simple, reproducible.
PtTe of the present invention2Preparation method, with PtTe2Cr is deposited with vacuum coating equipment in the substrate of nanometer sheet
PtTe is made in (20nm) and Au (80nm)2Field effect transistor.
PtTe produced by the present invention2The field effect transistor that nanometer sheet is prepared, be spintronics and quantum calculation,
Spin-torque device and on piece are electrically interconnected and electricity device is prepared as finding that new electronic device and equipment provides new possibility.
Beneficial effect
The telluride platinum two-dimensional material of stratiform has originally been made in the present invention, in addition, by growth temperature, carrier gas flux,
The Collaborative Control of the parameters such as sedimentation time and base reservoir temperature can further improve the performance of two-dimensional material obtained, such as improve two
The regularity for tieing up material, the thickness for reducing two-dimensional material, the crystallinity for improving two-dimensional material etc..
Telluride nano sheets of platinum thickness range prepared by the present invention is in 2-40nm, and for size at 1.5-52 μm, pattern is well six
Side shape and triangle, better crystallinity degree, quality are high.With this method controllability and favorable reproducibility, for preparation telluride platinum hetero-junctions and
The research of new material provides platform.
It is generated in preparation process of the present invention without complex operations step and other by-products of object, equipment is simple, and easy to operate
It is easy.
The monocrystalline telluride that the present invention has been obtained by simple aumospheric pressure cvd method for the first time with a thickness of 2-40nm
Nano sheets of platinum, size are monocrystalline at 1.5-52 μm, and quality is high.
Detailed description of the invention
Fig. 1 is three square crystal 1-T PtTe2(111) face structure chart；
The aumospheric pressure cvd schematic device of Fig. 2 preparation telluride nano sheets of platinum；
Fig. 3 is the optical schematic diagram of telluride nano sheets of platinum prepared by embodiment 1；
Fig. 4 is the optical schematic diagram of telluride nano sheets of platinum made from embodiment 2；
Fig. 5 is the optical schematic diagram of telluride nano sheets of platinum made from embodiment 3；
Fig. 6, Fig. 7 are the optical schematic diagram of telluride nano sheets of platinum made from embodiment 4；
Fig. 8 is the optical schematic diagram of telluride nano sheets of platinum made from embodiment 5；
Fig. 9 is the optical schematic diagram of telluride nano sheets of platinum made from embodiment 6；
Figure 10 is the optical schematic diagram of telluride nano sheets of platinum made from embodiment 7；
Figure 11 is the optical schematic diagram of telluride nano sheets of platinum device prepared by embodiment 8；
Figure 12 is respectively the telluride nano sheets of platinum optical schematic diagram that comparative example 1 obtains；
Figure 13 is telluride nano sheets of platinum optical schematic diagram prepared by comparative example 2；
Figure 14 is telluride nano sheets of platinum optical schematic diagram prepared by comparative example 3；
Figure 15 is telluride nano sheets of platinum optical schematic diagram prepared by comparative example 4；
Figure 16 is telluride nano sheets of platinum optical schematic diagram prepared by comparative example 5.
Figure 17 is telluride nano sheets of platinum optical schematic diagram prepared by comparative example 6.
Specific implementation method:
Below by case study on implementation, the present invention is further described, but the contents of the present invention are not limited solely in following
Hold.
The vapor phase growing apparatus schematic diagram 2 of telluride nano sheets of platinum is prepared, number 1 indicates smelting furnace (heating device), digital 2 tables
Show the horizontal quartz tube full of argon gas, number 3 indicates to fill the porcelain boat of tellurium powder powder, and (region of setting is named as upstream alternating temperature
Area), number 4 indicates to fill the porcelain boat (region of setting is named as high-temperature constant warm area) of platinum powder powder, and number 5 indicates to be loaded with
300nm SiO2The porcelain boat of/Si substrate (region of setting is named as downstream temperature-varying zone).
2 two end of quartz ampoule is provided with stomata, wherein the gas close to downstream alternating temperature crystallizing field (downstream temperature-varying zone)
Hole is venthole；The stomata of opposite end is air inlet.
The porcelain boat for filling tellurium powder powder is placed on to the temperature-varying zone of single temperature zone tube furnace upstream, the temperature-varying zone temperature of upstream is
410-500 DEG C, the porcelain boat for filling Ultrafine Platinum Powder powder is placed on and the temperature of flat-temperature zone is set in the flat-temperature zone of tube furnace is
1000-1170℃.With empty 300nm SiO2Growth substrate of/the Si as two-dimensional material is placed in stove temperature-varying zone, the change in downstream
The temperature of warm area is 350-720 DEG C, and the flow of setting carrier gas (argon gas) is 50-400sccm, and constant temperature 20-40min can be obtained tellurium
Change platinum two-dimensional material.
PtTe2Two-dimensional material device is as made from vacuum coating equipment deposition Cr (20nm) and Au (80nm).
Embodiment 1
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The porcelain boat of last (38-74 μm of partial size) is placed on the temperature-varying zone of tube furnace upstream, and temperature is 500 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1000 DEG C, and argon flow is 50sccm, constant temperature 40min, just has list on the position of 720 DEG C certain of silicon wafer temperature-varying zone
Brilliant telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared optics
Photo is as shown in Figure 3.
Fig. 3 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2White and yellow in/Si substrate, under this condition
Obtained telluride nano sheets of platinum good crystallinity, with a thickness of 9-40nm, size is 2.5-4.5 μm.Scale in Fig. 3 is 5 μm.
Embodiment 2
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 500 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1050 DEG C, and argon flow is 80sccm, constant temperature 30min, just has list on the position of 700 DEG C certain of silicon wafer temperature-varying zone
Brilliant telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared optics
Photo is as shown in Figure 4.
Fig. 4 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, Si/SiO2Substrate be white, yellow, purple six sides
Shape represents the telluride platinum (by thick to thin) of different-thickness, the telluride nano sheets of platinum good crystallinity obtained under this condition, with a thickness of
7-30nm, size are 3-11 μm.Scale in Fig. 4 is 5 μm.
Embodiment 3
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 480 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1100 DEG C, and argon flow is 120sccm, constant temperature 25min, is just had on the position of 680 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in Figure 5 to learn photo.
Fig. 5 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is the hexagon generation of white, yellow
The table telluride platinum of different-thickness (by thick to thin), the telluride nano sheets of platinum good crystallinity obtained under this condition, with a thickness of 11-
23nm, size are 7.6-12 μm.Scale in Fig. 5 is 10 μm.
Embodiment 4
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 430 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1130 DEG C, and argon flow is 150sccm, constant temperature 25min, is just had on the position of 620 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
Photo such as Fig. 6 is learned, shown in 7.
Fig. 6,7 be the optical schematic diagram of the telluride nano sheets of platinum of preparation, Si/SiO2Substrate is the hexagon of white, yellow
Represent the telluride platinum (by thick to thin) of different-thickness, the telluride nano sheets of platinum good crystallinity obtained under this condition, with a thickness of 6-
30nm, size are 9.5-52 μm.Scale in Fig. 6 is 10 μm；Scale in Fig. 7 is 20 μm.
Embodiment 5
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 430 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1150 DEG C, and argon flow is 200sccm, constant temperature 20min, is just had on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in Figure 8 to learn photo.
Fig. 8 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is the hexagon of purple, the condition
Under obtained telluride nano sheets of platinum good crystallinity, with a thickness of 4-7nm, size is 6.5-13.5 μm.Scale in Fig. 8 is 10 μm.
Embodiment 6
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 420 DEG C, a piece of Si/300nmSiO2As
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1150 DEG C, and argon flow is 300sccm, constant temperature 20min, is just had on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in Figure 9 to learn photo.
Fig. 9 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is the triangle of purple, the condition
Under obtained telluride nano sheets of platinum good crystallinity, with a thickness of 3-4nm, size is 1.5-5.7 μm.Scale in Fig. 9 is 10 μm.
Embodiment 7
The preparation of telluride nano sheets of platinum:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 410 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1170 DEG C, and argon flow is 400sccm, constant temperature 20min, is just had on the position of 350 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in Figure 10 to learn photo.
Figure 10 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is that the hexagon of purple represents
The telluride platinum of different-thickness, the telluride nano sheets of platinum good crystallinity obtained under this condition, but size is smaller, with a thickness of 3-4nm, greatly
Small is 2-3.5 μm.Scale in Figure 10 is 5 μm.
Embodiment 8
The preparation of telluride nano sheets of platinum device: with PtTe2Cr is deposited with electron beam exposure in the substrate of nanometer sheet
(20nm) and Au (80nm) obtain PtTe obtained2Field effect transistor.The light of Figure 11 telluride nano sheets of platinum field effect transistor
Picture is learned, scale is 5 μm.
Comparative example 1
This comparative example is inquired into, and lower tellurium powder volatilization temperature is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 400 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1100 DEG C, and argon flow is 120sccm, constant temperature 20min.Experimental equipment as shown in Fig. 2, reaction after optical photograph such as
Shown in Figure 12,5 μm of scale.
Figure 12 is the optical schematic diagram after the reaction, SiO2/ Si substrate is no product, is because being placed on upstream temperature-varying zone
400 DEG C of tellurium powder can not be evaporated and then be reacted with platinum powder, so generating without product.
Comparative example 2
This comparative example is inquired into, and higher platinum powder volatilization temperature is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 420 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1200 DEG C, and argon flow is 120sccm, constant temperature 20min, is just had on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in figure 13 to learn photo.
Figure 13 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is white, yellow different-thickness
Telluride platinum (by thick to thin), the telluride nano sheets of platinum obtained under this condition has much irregularly, and with a thickness of 12-30nm, size is
5-8.4μm.Scale in Figure 13 is 10 μm.
Comparative example 3
This comparative example is inquired into, and higher carrier gas flux is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 420 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1100 DEG C, and argon flow is 500sccm, constant temperature 20min, is just had on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in figure 14 to learn photo.
Figure 14 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is the hexagon generation of yellow, purple
The table telluride platinum of different-thickness (by thick to thin) has around the telluride nano sheets of platinum that obtains under this condition since flow is too big
Many particles, with a thickness of 2-9nm, size is 5.8-9.5 μm.Scale in Figure 14 is 5 μm.
Comparative example 4
This comparative example is inquired into, and shorter sedimentation time is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 420 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1100 DEG C, and argon flow is 120sccm, constant temperature 5min, just has list on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Brilliant telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared optics
Photo is as shown in figure 15.
Figure 15 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, SiO2/ Si substrate is the hexagon telluride platinum of purple
Nanometer sheet, the telluride nano sheets of platinum size obtained under this condition is too small, and with a thickness of 2-4nm, size is~0.8 μm.In Figure 15
Scale is 5 μm.
Comparative example 5
This comparative example is inquired into, and lower depositing temperature is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤1 μm) is placed on to the flat-temperature zone of tube furnace, fills the tellurium powder powder of 0.6g
The temperature-varying zone temperature that the porcelain boat of last (38-74 μm of partial size) is placed on tube furnace upstream is 420 DEG C, a piece of 300nm SiO2/ Si conduct
PtTe2Bright be placed on another porcelain boat up of growth substrate be placed in the temperature-varying zone in stove downstream to obtain crystalline substance appropriate
Body growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then it is increased to stove heating
1100 DEG C, and argon flow is 120sccm, constant temperature 20min, is just had on the position of 200 DEG C certain of silicon wafer temperature-varying zone
Monocrystalline telluride nano sheets of platinum generates.The Experimental equipment of telluride nano sheets of platinum as shown in Fig. 2, the telluride platinum rice piece prepared light
It is as shown in figure 16 to learn photo, 5 μm of scale.
Figure 16 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, and the temperature of silicon wafer is too low under this condition, is lower than telluride
The growth temperature of nano sheets of platinum, no product deposition.
Comparative example 6
This comparative example is inquired into, and biggish platinum powder partial size is specific as follows:
The porcelain boat for filling 0.04g platinum powder last (partial size≤38-691 μm) is placed on to the flat-temperature zone of tube furnace, fills 0.6g's
The temperature-varying zone temperature that the porcelain boat of tellurium powder powder (38-74 μm of partial size) is placed on tube furnace upstream is 430 DEG C, a piece of 300nm SiO2/
Si is as PtTe2Growth substrate bright be placed on another porcelain boat that be placed in the temperature-varying zone in stove downstream suitable to obtain up
When crystal growth temperature.Before heating, the air in quartz ampoule is discharged with the argon gas of larger flow.Then heat stove
1150 DEG C are increased to, and argon flow is 200sccm, constant temperature 20min, on the position of 480 DEG C certain of silicon wafer temperature-varying zone
Just have the generation of single crystal tellurium nano sheets of platinum.The Experimental equipment of telluride nano sheets of platinum is as shown in Fig. 2, the telluride platinum rice prepared
The optical photograph of piece is as shown in figure 17, and 10 μm of scale.
Figure 17 is the optical schematic diagram of the telluride nano sheets of platinum of preparation, and the fusing point of platinum powder is very high under this condition, it is difficult to occur
Chemical reaction generates telluride nano sheets of platinum, no product deposition.
Claims (5)
1. a kind of preparation method of telluride platinum two-dimensional material, which is characterized in that by tellurium powder in the temperature not less than 410 DEG C, platinum powder
1000 ~ 1170 DEG C at a temperature of volatilize, the tellurium and platinum that will volatilize are in the carrier gas flux of 50 ~ 400sccm, change at 350-720 DEG C
Vapor deposition is learned in substrate surface, telluride platinum two-dimensional material is made；
Partial size≤1 μm of platinum powder；
The chemical vapor deposition time is 20-40min.
2. the preparation method of telluride platinum two-dimensional material as described in claim 1, which is characterized in that tellurium powder volatilization temperature be
410~500℃。
3. the preparation method of telluride platinum two-dimensional material as described in claim 1, which is characterized in that the flow of carrier gas be 100 ~
400sccm。
4. the preparation method of telluride platinum two-dimensional material as described in claim 1, which is characterized in that the temperature of chemical vapor deposition
It is 480-620 DEG C.
5. such as the preparation method of the described in any item telluride platinum two-dimensional materials of claim 1 ~ 4, which is characterized in that implement the system
The vapor phase growing apparatus of Preparation Method includes the quartz ampoule of sealing, and one end of the quartz ampoule is arranged for into quartz ampoule chamber
The entrance of carrier gas is inputted, the other end is provided with the outlet for exporting quartz ampoule gas to chamber；According to carrier gas stream direction, by institute
The chamber for the quartz ampoule stated is divided into upstream temperature-varying zone, high-temperature constant warm area and downstream temperature-varying zone；Wherein, the magnetic boat equipped with platinum powder is placed
In high-temperature constant warm area, the magnetic boat equipped with tellurium powder places upstream temperature-varying zone, and substrate is placed on downstream temperature-varying zone；The vapor deposition
Device is additionally provided with the heating device heated to quartz ampoule high-temperature constant warm area.
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| CN109231176A (en) * | 2018-11-05 | 2019-01-18 | 深圳大学 | A kind of telluride nano sheets of platinum and preparation method thereof |
| CN109881255B (en) * | 2019-03-15 | 2020-07-24 | 湖南大学 | Tetragonal phase and/or hexagonal phase cobalt selenide two-dimensional material and preparation and application thereof |
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| CN112310238A (en) * | 2020-10-27 | 2021-02-02 | 合肥工业大学 | Self-driven Schottky junction type ultra-wide band photoelectric detector based on two-dimensional platinum telluride nano film and silicon and preparation method thereof |
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| CN114735661B (en) * | 2022-06-15 | 2022-09-20 | 之江实验室 | Two-dimensional superconducting PtTe prepared based on two-dimensional tellurium nanocrystals 2 And preparation method and application thereof |
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