CN108435258A - Purify air semiconductors coupling catalyst and preparation method thereof - Google Patents

Purify air semiconductors coupling catalyst and preparation method thereof Download PDF

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CN108435258A
CN108435258A CN201810121631.7A CN201810121631A CN108435258A CN 108435258 A CN108435258 A CN 108435258A CN 201810121631 A CN201810121631 A CN 201810121631A CN 108435258 A CN108435258 A CN 108435258A
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oxygen
type semiconductor
catalyst
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coupling catalyst
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谢贤宁
张顺中
林群
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Suzhou Rong Electric Environment Technology Co Ltd
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Abstract

The present invention provides a kind of purification air semiconductors coupling catalyst, p type semiconductor oxides, the n type semiconductor oxides through oxygen-lean atmosphere heating activation process containing the activation process that heats up through oxygen-enriched atmosphere, p type semiconductor oxides, n type semiconductor oxide weight ratios are 0.1:1.0~1.0:1.0, grinding activation is have passed through after the two mixing again.The composite catalyst of the present invention has stronger adsorption capacity to oxidizing gas, reducibility gas, it can be as the material for air purification of universality, formaldehyde can be removed at normal temperatures and pressures, the gaseous pollutants such as toluene, dimethylbenzene, hydrogen sulfide, ammonia, lysol volatile matter can also be catalytically decomposed, can also convert ozone catalytic to oxygen.Composite catalyst itself is not lost in catalytic process, can permanently use, after composite catalyst continuous work fatigue, can be placed in fresh air a few hours, can be worked normally after fatigue to be restored.

Description

Purify air semiconductors coupling catalyst and preparation method thereof
Technical field
The invention belongs to catalytic oxidation technologies fields, and in particular to a kind of purification air semiconductors coupling catalyst and its Preparation method.
Background technology
As people are to the pay attention to day by day of health, environmental protection also becomes present big hot topic.New clothes are repaired the house general within doors All there are the pernicious gases such as formaldehyde, these also become main air pollutants, have seriously to the health of people Harm.The main method of removal formaldehyde is by active carbon adsorption at present, but such method can again discharge the formaldehyde of absorption Out, there are the risks of secondary pollution.Meanwhile it after activated carbon adsorption saturation, needing to constantly change, to the convenience and warp used Ji property affects.Furthermore activated carbon is as a kind of wide spectrum adsorbent, when relative air humidity is larger（Such as 80%）, can pass through It largely adsorbs the vapor in air and reaches saturation, to lose the function of formaldehyde adsorption.To solve the above problems, in recent years There is the catalytic decomposition type purifying formaldehyde material based on metal oxide, as reported two in patent of invention CN102019189B The Formaldehyde decomposition catalysis material and its fiber of the compositions such as manganese oxide, aluminium oxide, silica, copper oxide, platinum oxide and magnesia carry Body material, the degradation rate of PARA FORMALDEHYDE PRILLS(91,95) can reach 90% or more in the catalysis material short time, and the persistence of decomposing formaldehyde compared with By force, and a part of carbon dioxide product can be absorbed.But compared with activated carbon, the speed of catalysis material chemical breakdown formaldehyde compared with Slowly, continuous work is easy fatigue, and catalytic activity reduces, and practical requirement has not yet been reached at present.
Invention content
In order to solve the deficiencies in the prior art, the present invention provides a kind of purification air semiconductors coupling catalyst and its Preparation method.
The purpose of the present invention is achieved through the following technical solutions：
Air semiconductors coupling catalyst is purified, the catalyst, which contains the p-type through oxygen-enriched atmosphere heating activation process, partly leads The n-type semiconductor oxide of oxide body, the activation process that heats up through oxygen-lean atmosphere, and the p-type semiconductor oxide, n-type Conductor oxidate weight ratio is 0.1:1.0~1.0:1.0.
Preferably, the p-type semiconductor oxide is including but not limited to NiO, Cu2O、CoO、FeO、Cr2O3In One or more kinds of compositions.
Preferably, the n-type semiconductor oxide is including but not limited to ZnO, TiO2、MnO2、Fe2O3、CuO、 CdO、Al2O3、SnO、V2O5In one or more kinds of compositions.
Preferably, the preparation method of the purification air semiconductor catalyst, includes the following steps：
P-type semiconductor oxide is carried out heating activation process by S1 in oxygen-enriched atmosphere, to n-type semiconductor oxide in oxygen deprivation gas Atmosphere carries out heating activation process；
S2, will be activated in S1 after raw material mix in proportion, after being ground activation again 1.0~6.0 hours, obtain fineness For the semiconductor oxide catalyst powder of 500~1200 mesh.
Preferably, the preparation of the catalyst further includes following steps,
S3, by the catalyst powder in S2 be dispersed in containing mass percent be 0.1%~5.0% Na2O·nSiO2, wherein n=1 In~2 aqueous solution, it is configured to aqueous slurry or coating.
Preferably, the S1 includes the following steps：
S11, under the conditions of oxygen-enriched atmosphere, p-type semiconductor oxide is warming up to 200-500oC carries out constant temperature heat treatment, constant temperature Time is 3~10 hours；
S12, under the conditions of oxygen-lean atmosphere, n-type semiconductor is warming up to 230-550oC carries out constant temperature heat treatment, and constant temperature time is 4~10 hours.
Preferably, it is 50%~80% that oxygen-enriched atmosphere condition, which refers to the percent by volume of oxygen, in the S11, in the S12 Oxygen-lean atmosphere condition refers to that the percent by volume of oxygen is not higher than 9%.
Preferably, ionic conduction type kayexalate powder auxiliary and electrically conductive graphite powder need to be added when the S2 grindings Last auxiliary agent is activated.
Preferably, the mass percent of kayexalate powder auxiliary is 0.1%~5.0% in the S2.
Preferably, electrically conductive graphite powder auxiliary agent mass percent is 0.1%~20.0% in the S2.
Beneficial effects of the present invention are embodied in：1, due to the p-type and n-type containing activated processing in composite catalyzing material Two kinds of semiconductors, not only to oxidizing gas（Such as oxygen）, and have stronger adsorption capacity, Ke Yizuo to reducibility gas For the material for air purification of universality, in addition to formaldehyde can be effectively removed, additionally it is possible to toluene, two be catalytically decomposed at normal temperatures and pressures The gaseous pollutants such as toluene, hydrogen sulfide, ammonia, lysol volatile matter, this is because above-mentioned gaseous pollutant is all reproducibility gas Body, can be by catalysis oxidation.
2, composite catalyst can also convert ozone catalytic to oxygen.Ozone is a kind of very strong gas of oxidisability, therefore It is easy to be attracted to catalysis material surface, 2O occurs3 → 3O2Catalysis reaction, generate oxygen molecule.
3, composite catalyst itself is not lost in catalytic process, can permanently use.After catalyst continuous work fatigue, It can place in fresh air a few hours, can be worked normally after fatigue to be restored.
Specific implementation mode
Present invention is disclosed a kind of purification air semiconductors coupling catalyst, the catalyst contains through oxygen-enriched atmosphere liter Warm activation process p-type semiconductor oxide, heat up activation process n-type semiconductor oxide, and the p-type through oxygen-lean atmosphere Conductor oxidate, n-type semiconductor oxide weight ratio are 0.1:1.0~1.0:1.0.The p-type semiconductor oxide packet It includes but is not limited to NiO, Cu2O、CoO、FeO、Cr2O3In one or more kinds of compositions.The n-type semiconductor oxygen Compound is including but not limited to ZnO, TiO2、MnO2、Fe2O3、CuO、CdO、Al2O3、SnO、V2O5In one or more Composition.The purity of the above p-type semiconductor oxide and n-type semiconductor oxide powder is 90% or more, primary particles fineness It is for 100 mesh or thinner.
Meanwhile present invention further teaches the preparation methods of above-described purification air semiconductor catalyst, including such as Lower step：
S1, p-type semiconductor oxide is subjected to heating activation process in oxygen-enriched atmosphere, to n-type semiconductor oxide in oxygen deprivation Atmosphere carries out heating activation process；It specifically refers under the conditions of oxygen-enriched atmosphere, p-type semiconductor oxide is warming up to 200- 500oC carries out constant temperature heat treatment, and constant temperature time is 3~10 hours；To increase the metallic atom lattice defect in oxide and lead The concentration in electric hole increases the relative amount of oxygen atom in p-type oxide, makes the opposite defect counts and conduction of metallic atom Hole number is more, and oxide composition deviates more from stoichiometric ratio, to increase p-type semiconductor oxide to reproducibility gas Body（Such as formaldehyde）Adsorption capacity.The specific heating temperature for the activation process that heats up is depending on different oxides, to avoid oxygen The phase transformation or decomposition of compound, wherein the percent by volume that the oxygen-enriched atmosphere condition refers to oxygen is 50%~80%.
Under the conditions of oxygen-lean atmosphere, n-type semiconductor oxide is warming up to 230-550oC carries out constant temperature heat treatment, constant temperature Time is 4~10 hours, and to reduce the relative amount of oxygen atom in n-type oxide, the oxygen atom lattice increased in oxide lacks The concentration for falling into and conducting electronics makes oxide composition deviate more from stoichiometric ratio, to increase n-type semiconductor oxide pair Oxidizing gas（Such as oxygen）Adsorption capacity.Likewise, specifically the specific heating temperature of heating activation process regards difference Oxide depending on, to avoid the phase transformation or decomposition of oxide.Wherein, the oxygen-lean atmosphere condition refers to the volume basis of oxygen Than being not higher than 9%.
S2, the raw material in S1 after heating activates is mixed in proportion, then after being ground activation 1.0~6.0 hours, obtained To the semiconductor oxide catalyst powder that fineness is 500~1200 mesh.Above-mentioned catalysis powder can be carried on all kinds of inorganic matters and Organic particle（Such as alumina particle, clay particle, quartz particles, PVC granule, PP particles）On carrier, forming granularity is The catalysed particulate of 1.0~7.0mm.
As a kind of optimization granulation scheme, the alumina particle of a diameter of 1.0mm of 100g is first weighed, alumina particle is put Enter in a Flat bottom container, which is placed on a heatable cyclotron oscillation device, and the alumina particle in container is made to vibrate Rolling, mutually collision are not stopped under the drive of device.Then catalyst pulp is added into container in multiple times on a small quantity, and is stirred continuously and makes Slurry is catalyzed powder in a heated condition in uniform load to alumina particle, in slurry therewith and sodium silicate aqueous solution proportioning is It is 100g：80~100ml.Alumina particles diameter increase to be oxidized is to a certain extent（Such as 2.0~3.0mm）It can stop feeding, fill Catalysed particulate has just been made after dividing drying.To increase the intensity of catalysed particulate, granule atomization is avoided, can be added in granulation process On a small quantity（<10wt.%）Reinforcing agent, such as kaolin, diatom ooze, calcium oxide, calcium hydroxide, calcium sulfate, white cement, tourmaline.
The above grinding activation refers to carrying out mechanical lapping to the conductor oxidate mixture mixed in proportion in S1, So that p-type and n-type semiconductor oxide is mixed evenly, forms p-n junction, while keeping particle more tiny.It is mixed to increase semiconductor The mobility and electric conductivity of object are closed, the electrostatic agglomeration of particle in process of lapping is reduced, ionic conduction type polyphenyl is added in grinding Vinyl sulfonic acid sodium powder auxiliary and electrically conductive graphite powder auxiliary agent are activated.The molecule of the kayexalate powder auxiliary Amount is 1.2-3.6 ten thousand, and addition is the 0.1%~5.0% of total weight, and the conductivity of the electrically conductive graphite powder auxiliary agent is not less than 105S/m, mass percent are 0.1%~20.0%.
S3, by the catalyst powder in S2 be dispersed in containing mass percent be 0.1%~5.0% Na2O·nSiO2（Wherein N=1~2）Aqueous solution in, be configured to aqueous slurry or coating preferably to be used, the slurry or coating can be applied directly Cloth forms the catalyst coatings that thickness is 50~1000 μm on various just effects, middle effect and efficient filter base material.The mode of coating has It brushes and sprays, the proportioning for being catalyzed powder and sodium silicate aqueous solution in the slurry of brushing is 100g：150~200ml, slurry It is coated on base material and forms a film via brush.For being to be catalyzed the proportioning of powder and sodium silicate aqueous solution to be in the slurry of spraying 100g：350~400ml, slurry are ejected on base material by high pressure watering can and are formed a film.
The catalytic decomposition ability of the above semiconductors coupling catalyst PARA FORMALDEHYDE PRILLS(91,95) can reach practical level.Such as optimize at one In test, by the catalysis material that weight is 500g, with volume be 1.0L, the sodium silicate aqueous solution of a concentration of 3.0wt.% mixes and matches It is set to slurry, it is 0.84m that then slurry, which is brushed in the gross area,2Corrugated primarily efficient filter it is online, after slurry drying after be made Catalyst coatings filter core.Catalyzed filter element is placed in the clarifier model machine that power is 40W, measures model machine PARA FORMALDEHYDE PRILLS(91,95) at ambient temperature CADR (Clean Air Delivery Rate) value can reach 80m3/h.This CADR value of catalyzed filter element, with the market mainstream Modified active filtration core CADR values it is close, and also prodigious room for promotion.In another optimal inspection, catalysis material Material loads on clay particle, and the catalysed particulate that grain size is 3.0mm is made, and the catalysed particulate that volume is 3.0L is filled in honeycomb Catalysed particulate filter core is made in shape aggregate, filter core is put in model machine, and the CADR values for measuring PARA FORMALDEHYDE PRILLS(91,95) are 90m3/h。
There are one important features for semiconductors coupling catalyst, i.e., with the raising of negative ion concentration in surrounding air, catalysis The ability of material decomposing formaldehyde significantly improves.The CADR values of catalysis material PARA FORMALDEHYDE PRILLS(91,95) above-mentioned are all in negative ion concentration Less than 1000ion/cm3Indoor conditions under measure.The enhancing of catalysis material clean-up effect is made for demonstration negative ion concentration With specially anion generator being placed in test chamber, to regulate and control negative ion concentration in cabin.As a result, it has been found that working as negative ion concentration For 200~1000ion/cm3When, the CADR values of a certain catalyzed filter element PARA FORMALDEHYDE PRILLS(91,95) are 70m3/h；When negative ion concentration is increased to 1000 ~10000ion/cm3When, CADR values have been increased to 85m3/h；When negative ion concentration further rises to 10000~80000ion/ cm3When, CADR values have reached 102m3/h.On the contrary, the influence of environment temperature and relative humidity to catalysis material is little, when air is negative When ion concentration is identical, under 5~35 DEG C of environment temperature, 10~85% relative humidities, catalyzed filter element PARA FORMALDEHYDE PRILLS(91,95) CADR values are basically unchanged.
Conductor oxidate heats up activation process usually respectively to the progress heating treatment of the oxide of one-component, this is Because the thermal stability and phase transition temperature of different oxides are different, it is necessary to treat with a certain discrimination, respectively be added at a proper temperature Heat treatment, temperature is too low, then does not have the effect for increasing defect and conducting carriers；Temperature is too high, then may lead to oxide Phase transformation or decomposition, can also increase the energy consumption of heat treatment process.
It is illustrated below in conjunction with specific embodiment：
Heating activation process step of the p-type semiconductor oxide under oxygen-enriched atmosphere：
By taking NiO as an example, the NiO powders of 100g are weighed, are placed in graphite crucible, NiO powder lot dispersings are opened as possible, make itself and air With big contact area.
Graphite crucible is placed in quartz tube furnace, tube furnace is evacuated to 10 with vacuum pump-2Then the vacuum degree of torr will Oxygen content is 60%（Percent by volume）Oxygen/nitrogen mixed gas be continuously passed through in tube furnace, oxygen here/ Nitrogen mixed gas is by the industrial oxygen and the oxygen rich gas that is mixed to get by throttle valve adjustment flow velocity of nitrogen in steel cylinder. After 15-30 minutes, after oxygen-rich mixture body flows in and out the velocity-stabilization of tube furnace, with the heating rate of 10 DEG C/min NiO powders in tube furnace are heated to 470 DEG C, and the natural cooling after 470 DEG C of constant temperature 6 hours.Entire heating, constant temperature and cold But the oxygen-enriched atmosphere in tube furnace is all kept during.
Heating activation process step of the n-type semiconductor oxide under oxygen-lean atmosphere：
By taking CuO as an example, the CuO powders of 100g are weighed, are placed in graphite crucible, CuO powder lot dispersings are opened as possible, make itself and air Keep big contact area.Graphite crucible is placed in quartz tube furnace, tube furnace is evacuated to 10 with vacuum pump-2The vacuum of torr Degree, then continuously rinses tube furnace 30 minutes with 99% industrial nitrogen, makes to reach oxygen-lean atmosphere in tube furnace, at this time The percent by volume of oxygen is not higher than 9% in stove.Under conditions of being passed through 99% industrial nitrogen, with the heating rate of 10 DEG C/min CuO powders in tube furnace are heated to 500 DEG C, and the natural cooling after 500 DEG C of constant temperature 10 hours.Entire heating, constant temperature and The oxygen-lean atmosphere in tube furnace is all kept in cooling procedure.
The mixing of p-type and n-type semiconductor oxide and grinding activation step：
NiO powders of the 20g through the activation that heats up under excess oxygen is weighed, CuO powder of the 80g through the activation that heats up under oxygen lean conditions is weighed Material after mixing the two, the kayexalate powder that 2.0g molecular weight is 2.0 ten thousand is added into mixture, adds 10.0g conductivities are not less than 105The graphite powder of S/m.In thus obtained mixture, p-type semiconductor NiO and n-type semiconductor The weight percent of CuO is respectively 17.8% and 71.4%, and the content of auxiliary agent kayexalate and graphite is respectively 1.8% He 9.0%。
Said mixture is tentatively stirred, is ground activation after mixing.Metal oxide powder since density is big, Poorly conductive is easy viscous glutinous reunion, after adding graphite powder and kayexalate powder auxiliary agent, mixing in process of lapping The mobility and dispersibility of object have obtained significantly improving, and grinding is easier to make for.
Said mixture is put into ball grinder, the simplified rotating speed of ball mill is progressively increased to 700r/min, at this Mixture is persistently ground 6.0 hours under part.In process of lapping, oxide powder under the shock of the mill ball of high-speed motion, Further fragmentation refinement, grinding aid increase the uniformity and consistency of fragmentation refinement, and p-type and n-type semiconductor obtain Further mixing is more easy in conjunction with p-n junction is formed, and high energy impacts, shearing force and the frictional force that mill ball generates are also to oxidation The catalysis of object generates activation.After 6.0 hours ball millings, the fineness of mixture has reached 800 mesh.
The making of catalyzed filter element and model machine
The catalyst of a certain composition is made after above-mentioned heating activates and grinds activation, wherein p-type semiconductor NiO and Cu2O's Weight percent is respectively 12.0% and 15.0%, n-type semiconductor CuO and MnO2Weight percent be respectively 30.0% He 36.0%, the weight percent of auxiliary agent graphite and kayexalate is respectively 5.2% and 1.8%.
By the above-mentioned catalyst that total weight is 500g, it is water-soluble for 1.0L, the sodium metasilicate of a concentration of 3.0wt.% to be dispersed in volume In liquid, water paint is obtained after being sufficiently stirred.
Using thickness for 3.0mm polypropylene primarily efficient filter wool as the base material of catalytic coatings, filter cotton be folded into 30cm × The pleat of 4.7cm, total pleat number are 60, and the corresponding gross area is about 0.84m2.Coating is dipped with art designing's brush, single side is brushed in mistake On filter pulp, being uniformly distributed for coating is paid attention in brushing, filter cotton can be brushed repeatedly, until the catalytic coatings brush of 1.0L is complete Until.
After masking liquid drying, there is the filter cotton of catalyst coatings to be packed into 30cm (width) × 50cm (height) × 4.7cm single side In the aluminium frame of (thickness), catalyzed filter element is thus made.
Above-mentioned catalyzed filter element is installed in the cartridge groove of a homemade clarifier model machine, is coated with the one side of catalyst coatings For air intake surface.Clarifier appearance and size is 33cm (length) × 33 (width) cm × 64cm (height), the area of air inlet be about 30cm × 50cm, the power corresponding to clarifier maximum quantity of wind are 40W.Check model machine, it is ensured that model machine is in normal operating conditions, model machine examination Operation is shut down after 1 hour for inspection.
The detection of purifying formaldehyde function
By the above clarifier model machine according to national standard GB/T 18801-2015《Air purifier》Standard, carry out purifying formaldehyde work( The detection of energy.
Testing conditions and equipment：Test is in 30m3It is carried out in experimental cabin, temperature is 23-27 DEG C in cabin, relative humidity 51- 59%, testing the key instrument equipment used has formaldehyde generator, air sampler, methylene oxide detecting instrument, spectrophotometer and gas phase Chromatograph etc..
Detecting step：The Natural Attenuation test for first carrying out formaldehyde, opens formaldehyde generator and agitation fan, control open and Shut-in time makes formaldehyde in experimental cabin be evenly distributed, and the initial concentration of formaldehyde is in 1.00 ± 0.20mg/m3In the range of.Examination Circulating fan in hatch checking is in open state always.
In acquisition experimental cabin after the initial sample of formaldehyde, start to test, a sample was acquired every 5 minutes, all when sampling Between be 60 minutes.
Then the complete attenuation test for carrying out formaldehyde, based on the above testing conditions and equipment, formaldehyde is initial in cabin to be tested Concentration（First sample point of complete attenuation）After measurement, clarifier model machine is opened to maximum quantity of wind, starts simultaneously at measurement, every 5 points Clock acquires a gas sample, and longest test period is 60 minutes.
Above-mentioned Natural Attenuation and complete attenuation test difference in triplicate, according to the data acquired, calculate model machine and purify first The CADR values of aldehyde：CADR = 60 x(k e - k n ) xV, whereink e （Unit：min-1）For complete attenuation constant,k n (unit：min-1) For Natural Attenuation constant, V (units：m3) it is experimental cabin volume.It is 77.9m that the CADR average values tested three times, which are calculated,3/h。
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features； And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and Range.

Claims (10)

1. purifying air semiconductors coupling catalyst, it is characterised in that：The catalyst, which contains to heat up through oxygen-enriched atmosphere, to be activated The n-type semiconductor oxide of the p-type semiconductor oxide of processing, the activation process that heats up through oxygen-lean atmosphere, and the p-type half Conducting oxide, n-type semiconductor oxide weight ratio are 0.1:1.0~1.0:1.0.
2. purification air semiconductors coupling catalyst as described in claim 1, it is characterised in that：The p-type semiconductor oxygen Compound is including but not limited to NiO, Cu2O、CoO、FeO、Cr2O3In one or more kinds of compositions.
3. purification air semiconductors coupling catalyst as claimed in claim 2, it is characterised in that：The n-type semiconductor oxygen Compound is including but not limited to ZnO, TiO2、MnO2、Fe2O3、CuO、CdO、Al2O3、SnO、V2O5In one or more Composition.
4. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 3, it is characterised in that：Including such as Lower step：
P-type semiconductor oxide is carried out heating activation process by S1 in oxygen-enriched atmosphere, to n-type semiconductor oxide in oxygen deprivation gas Atmosphere carries out heating activation process；
S2, will be activated in S1 after raw material mix in proportion, after being ground activation again 1.0~6.0 hours, obtain fineness For the semiconductor oxide catalyst powder of 500~1200 mesh.
5. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 3, it is characterised in that：It is described to urge The preparation of agent further includes following steps,
S3, by the catalyst powder in S2 be dispersed in containing mass percent be 0.1%~5.0% Na2O·nSiO2, wherein n=1 In~2 aqueous solution, it is configured to aqueous slurry or coating.
6. the preparation method of purification air semiconductors coupling catalyst as described in claim 1, it is characterised in that：The S1 Include the following steps：
S11, under the conditions of oxygen-enriched atmosphere, p-type semiconductor oxide is warming up to 200-500oC carries out constant temperature heat treatment, constant temperature Time is 3~10 hours；
S12, under the conditions of oxygen-lean atmosphere, n-type semiconductor oxide is warming up to 230-550oC carries out constant temperature heat treatment, constant temperature Time is 4~10 hours.
7. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 6, it is characterised in that：It is described It is 50%~80% that oxygen-enriched atmosphere condition, which refers to the percent by volume of oxygen, in S11, and oxygen-lean atmosphere condition refers to oxygen in the S12 Percent by volume be not higher than 9%.
8. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 4, it is characterised in that：The S2 Ionic conduction type kayexalate powder auxiliary need to be added when grinding and electrically conductive graphite powder auxiliary agent is activated.
9. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 8, it is characterised in that：The S2 The mass percent of middle kayexalate powder auxiliary is 0.1%~5.0%.
10. the preparation method of purification air semiconductors coupling catalyst as claimed in claim 9, it is characterised in that：It is described Electrically conductive graphite powder auxiliary agent mass percent is 0.1%~20.0% in S2.
CN201810121631.7A 2018-02-07 2018-02-07 Purify air semiconductors coupling catalyst and preparation method thereof Pending CN108435258A (en)

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CN111450698A (en) * 2020-04-09 2020-07-28 山东迅达化工集团有限公司 Selective oxidation purification treatment method for ammonia-containing gas flow
CN111545050A (en) * 2020-04-29 2020-08-18 江苏卓高环保科技有限公司 Catalytic adsorption and decomposition hydrogen sulfide composite material and wall-mounted deodorization purifier prepared from same
CN111569643A (en) * 2020-04-29 2020-08-25 江苏卓高环保科技有限公司 Composite purifying material for purifying PM2.5 formaldehyde and air purifier prepared from composite purifying material

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Application publication date: 20180824