CN108428799A - A kind of hybrid p-type semiconductor thin-film material based on nanocrystal - Google Patents
A kind of hybrid p-type semiconductor thin-film material based on nanocrystal Download PDFInfo
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- CN108428799A CN108428799A CN201810328542.XA CN201810328542A CN108428799A CN 108428799 A CN108428799 A CN 108428799A CN 201810328542 A CN201810328542 A CN 201810328542A CN 108428799 A CN108428799 A CN 108428799A
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- nanocrystal
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The present invention relates to technical field of semiconductor, provide a kind of design and implementation method of the hybrid p-type semiconductor thin-film material based on nanocrystal.The invention can keep organic semiconducting materials solwution method to prepare, under the premise of many advantages such as flexible foldable, by introducing inorganic nanocrystal in organic semiconducting materials, under particular range of wavelengths illumination, the hole concentration in organic semiconducting materials can be increased, greatly improve its conductivity.The present invention can be respectively by changing organic semiconducting materials and inorganic nanocrystal mass ratio, or the energy and flux of change illumination photons, to realize the modulation to hybrid p-type semiconductor thin-film material electrology characteristic.
Description
Technical field
The present invention relates to technical field of semiconductor, more particularly to a kind of hybrid p based on nanocrystal
The design and realization of type semiconductor film material.
Background technology
Organic semiconducting materials are the organic materials for having semiconductor property.Compared with inorganic semiconductor material, have
Many advantages, such as thin film preparation process cheap and simple；Device size smaller, integrated level higher；Device can realize flexibility, foldable
Deng.Organic semiconducting materials are obtained in various fields such as Organic Light Emitting Diode, organic sensor, organic photovoltaic cells
It is widely applied.It is well known that inorganic semiconductor material can change material internal carrier concentration by way of doping
And material fermi energy level, to realize the modulation to material electrology characteristic.However the photoelectric characteristic master of organic semiconducting materials
The molecular characterization that depend on constituent material itself, it is difficult to realize the modulation of its electrology characteristic by doping way.
Invention content
The purpose of the present invention is in view of the above problems, by introducing inorganic nano-crystal in organic semiconducting materials
System has machine/inorganic hybridized semiconductor material, and then realizes the modulation to material electrology characteristic.The present invention will utilize inorganic receive
The optical absorption characteristics of meter Jing Ti are realized its absorption to photon in particular range of wavelengths, and then are swashed inside inorganic nanocrystal
Shine raw electron hole pair；It, will on this basis by the energy level mismatch between inorganic nanocrystal and organic semiconducting materials
Light induced electron is limited in inside inorganic nanocrystal, and photohole is then injected into organic semiconductor material from inorganic nanocrystal
Material, to the conductivity for increasing the hole concentration in organic semiconducting materials, greatly improving material.The present invention can pass through respectively
Change organic semiconducting materials and inorganic nano-crystal body mass ratio, or change illumination photons energy and flux, to realize to having
The modulation of machine/inorganic hybridization p-type semiconductor thin-film material electrology characteristic.
Technical scheme of the present invention：
A kind of hybrid p-type semiconductor material based on nanocrystal, by organic semiconducting materials and inorganic nano-crystal
Body with certain mass than uniformly mixing, after by techniques such as spin coating, lifting, spraying or blade coatings prepare film.
The organic semiconducting materials can be any p-type organic semiconductor material.
The inorganic nanocrystal can be the inorganic nanocrystal of any shape and size in 2-100 nanometer ranges.
The organic semiconducting materials can uniformly be mixed with the inorganic nanocrystal with any mass ratio.
I type energy level alignments are formed between the organic semiconducting materials and the inorganic nanocrystal energy band, that is, inorganic to receive
Meter Jing Ti conduction bands (Ec) energy will be less than organic semiconducting materials lowest unoccupied molecular orbital (LUMO) energy, also, inorganic receive
Meter Jing Ti valence band (Ev) energy will be less than organic semiconducting materials highest occupied molecular orbital (HOMO) energy.
The particular range of wavelengths can be arbitrary wave-length coverage.
The intensity of illumination is arbitrary intensity of illumination.
The hybrid p-type semiconductor thin-film material thickness can be any thickness.
The advantages and positive effects of the present invention：
By introducing inorganic nanocrystal in organic semiconducting materials, may be implemented to hybrid semi-conducting material
The regulation and control of electrology characteristic.
By changing organic semiconducting materials and inorganic nano-crystal body mass ratio, thus it is possible to vary in organic semiconducting materials
The electrical parameters such as hole concentration, conductivity.
By changing illumination photons energy and flux, thus it is possible to vary hole concentration, conductivity in organic semiconducting materials
Equal electrical parameters.
Hybrid p-type semiconductor material of the present invention can keep many advantages of organic semiconducting materials, e.g.,
Prepared by solwution method, flexible foldable etc..
Description of the drawings
Fig. 1 is the structural schematic diagram of the hybrid p-type semiconductor thin-film material the present invention is based on nanocrystal.
Fig. 2 is that work of the hybrid p-type semiconductor thin-film material under light conditions based on nanocrystal is shown
It is intended to.
Fig. 3 is that energy band of the hybrid p-type semiconductor thin-film material based on nanocrystal under light conditions is former
Reason figure.
Specific implementation mode
With reference to the accompanying drawings and examples, the present invention is further explained.It should be understood that these embodiments be merely to illustrate the present invention and
It is not used in and limits the scope of the invention, all become without the structure that creative work is made from the present invention is to devise
It changes and is within the scope of the present invention.
Embodiment 1：
A kind of hybrid p-type semiconductor thin-film material based on silicon quantum dot, structure are as shown in Figure 1.It is wherein inorganic to receive
Meter Jing Ti is the silicon quantum dot of 6 ran of size；Organic semiconducting materials are P3HT.The conduction level position of silicon quantum dot
For -4.0 electron volts, valence-band level position is -5.1 electron volts；The lowest unoccupied molecular orbital energy of PH3T organic semiconducting materials
Grade position (LUMO) is -3.0 electron volts, and the position highest occupied molecular orbital energy level (HOMO) is -5.0 electron volts.Energy level alignment
For typical I types energy level alignment.
The preparation process of hybrid p-type semiconductor thin-film material is as follows in the embodiment：
1）By silicon quantum dot and P3HT respectively with 0:1 (pure P3HT); 0.2:0.8; 0.4:0.6; 0.5:0.5; 0.6:0.4
Mass ratio is mixed and is dispersed in chlorobenzene solvent, and solution concentration is 15 mg/ml；
2）Solution will be prepared to be stirred at room temperature 24 hours；
3）Film is prepared in substrate surface in a manner of spin coating, and is annealed 10 minutes under 100 degrees Celsius.Film thickness is 100
Ran.
It is shown using result：Under details in a play not acted out on stage, but told through dialogues test, silicon quantum dot is 0 with P3HT mass ratioes:1; 0.2:0.8; 0.4:0.6;
0.5:0.5; 0.6:0.4 film conductivity is respectively 0.8 S cm-1; 3.6 S cm-1; 8.7 S cm-1; 25.1 S
cm-1; 5.2 S cm-1.It it is 950 nanometers in wavelength, light intensity is film conductivity difference under the illumination condition of 10 mW cm-2
It increases to：0.8 S cm-1; 54.6 S cm-1; 131.4 S cm-1; 593.4 S cm-1; 89.5 S cm-1.In silicon
Quantum dot is 0.5 with P3HT mass ratioes:In 0.5 sample, if light intensity is further increased to 100 mW cm-2, thin-film electro
Conductance will be promoted to 932.1 S cm-1, and conductivity realizes ~ 37 times of increase under light conditions.
Embodiment 2：
A kind of hybrid p-type semiconductor thin-film material based on cadmium telluride quantum dot, structure are as shown in Figure 1.Wherein without
Machine nanocrystal is the cadmium telluride quantum dot of 3 ran of size；Organic semiconducting materials are PTB7.Cadmium telluride quantum dot is led
Band level of energy is -3.8 electron volts, and valence-band level position is -5.2 electron volts；The minimum of PTB7 organic semiconducting materials does not account for
The position molecular orbital energy level (LUMO) is -3.31 electron volts, and the position highest occupied molecular orbital energy level (HOMO) is -5.15 electronics
Volt.Energy level alignment is typical I types energy level alignment.
The preparation process of hybrid p-type semiconductor thin-film material is as follows in the embodiment：
1）By cadmium telluride quantum dot and PTB7 respectively with 0:1 (pure PTB7); 0.4:0.6; 0.5:0.5; 0.6:0.4 quality
Than mixing and being dispersed in chlorobenzene solvent, solution concentration is 15 mg/ml；
2）Solution will be prepared to be stirred at room temperature 24 hours；
3）Film is prepared in substrate surface in a manner of spin coating, and is annealed 10 minutes under 100 degrees Celsius.Film thickness is 100
Ran.
It is shown using result：Under details in a play not acted out on stage, but told through dialogues test, cadmium telluride quantum dot is 0 with PTB7 mass ratioes:1; 0.4:0.6; 0.5:
0.5; 0.6:0.4 film conductivity is respectively 1.3 S cm-1; 8.4 cm-1; 17.1 S cm-1; 34.2 S cm-1.
Wavelength be 850 nanometers, light intensity be 10 mW cm-2 illumination condition under, film conductivity increase separately to：16.4 S cm-
1; 40.8 S cm-1; 93.5 S cm-1; 532.1 S cm-1.It is 0.6 in cadmium telluride quantum dot and PTB7 mass ratioes:0.4
Sample in, conductivity realizes ~ 16 times of increase.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
Subject to.
To sum up, the present invention provides a kind of hybrid p-type semiconductor thin-film material based on nanocrystal.Its
It can increase the hole concentration in organic semiconducting materials under particular range of wavelengths illumination, greatly improve its conductivity.This hair
It is bright to pass through change organic semiconducting materials and inorganic nanocrystal mass ratio, or the energy of change illumination photons respectively
And flux, to realize the modulation to hybrid p-type semiconductor thin-film material electrology characteristic..
Claims (6)
1. a kind of hybrid p-type semiconductor thin-film material based on nanocrystal, it is characterised in that：By organic
Inorganic nanocrystal is introduced in semi-conducting material, under particular range of wavelengths illumination, can be increased in organic semiconducting materials
Hole concentration greatly improves material electric conductivity, and the regulation and control to hybrid semi-conducting material electrology characteristic may be implemented.
2. requiring the hybrid p-type semiconductor thin-film material based on nanocrystal, feature to exist according to right 1
In：The organic semiconducting materials can be any p-type organic semiconductor material.
3. requiring the hybrid p-type semiconductor thin-film material based on nanocrystal, feature to exist according to right 1
In：The inorganic nanocrystal can be the inorganic nanocrystal of any shape and size in 2-100 nanometer ranges.
4. requiring the hybrid p-type semiconductor thin-film material based on nanocrystal, feature to exist according to right 1
In：The organic semiconducting materials can uniformly be mixed with the inorganic nanocrystal with any mass ratio.
5. the particular range of wavelengths can be arbitrary wave-length coverage.
6. the intensity of illumination is arbitrary intensity of illumination.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768597A (en) * | 2021-02-22 | 2021-05-07 | 湖南大学 | Method for enhancing thermoelectric performance of organic semiconductor and organic semiconductor thermoelectric device |
| WO2021125120A1 (en) * | 2019-12-18 | 2021-06-24 | 花王株式会社 | Light absorption layer, method for producing same, coating liquid, photoelectric conversion element, and intermediate band solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365104A (en) * | 2018-03-29 | 2018-08-03 | 南开大学 | A kind of hybrid n-type semiconductor thin-film material based on nanocrystal |
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- 2018-04-13 CN CN201810328542.XA patent/CN108428799A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365104A (en) * | 2018-03-29 | 2018-08-03 | 南开大学 | A kind of hybrid n-type semiconductor thin-film material based on nanocrystal |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021125120A1 (en) * | 2019-12-18 | 2021-06-24 | 花王株式会社 | Light absorption layer, method for producing same, coating liquid, photoelectric conversion element, and intermediate band solar cell |
| CN112768597A (en) * | 2021-02-22 | 2021-05-07 | 湖南大学 | Method for enhancing thermoelectric performance of organic semiconductor and organic semiconductor thermoelectric device |
| CN112768597B (en) * | 2021-02-22 | 2022-02-22 | 湖南大学 | Method for enhancing thermoelectric performance of organic semiconductor and organic semiconductor thermoelectric device |
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