CN108418594A - Multiduty high s/n ratio formula Internet of Things radio circuit, circuit board, chip and terminal - Google Patents
Multiduty high s/n ratio formula Internet of Things radio circuit, circuit board, chip and terminal Download PDFInfo
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- CN108418594A CN108418594A CN201810099443.9A CN201810099443A CN108418594A CN 108418594 A CN108418594 A CN 108418594A CN 201810099443 A CN201810099443 A CN 201810099443A CN 108418594 A CN108418594 A CN 108418594A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
- H04B1/12—Neutralising, balancing, or compensation arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/1607—Supply circuits
Abstract
The embodiment of the invention discloses a kind of rf signal reception circuit, circuit board, chip and internet-of-things terminal, which includes：Antenna circuit, the first filter circuit, switching circuit, the second filter circuit, improved low noise amplifier circuit and improved mixting circuit；The output end of antenna circuit is connect with the input terminal of first filter circuit, the output end of first filter circuit is connect with the input terminal of the switching circuit, the output end of switching circuit is connect with the input terminal of second filter circuit, the output end of second filter circuit is connect with the input terminal of improved low noise amplifier circuit, and the output end of improved low noise amplifier circuit is connect with improved mixting circuit；Improved low noise amplifier circuit includes amplifying circuit and matching degree promotes circuit, and matching degree promotes circuit and is used to promote the impedance matching in low noise amplifier circuit.Foregoing circuit can improve treatment effect of the modem to signal to a certain extent.
Description
Technical field
The present invention relates to circuit structure technical field more particularly to a kind of multiduty high s/n ratio formula Internet of Things radio frequency electricals
Road, circuit board, chip and internet-of-things terminal.
Background technology
Internet of Things is the important component of generation information technology, and the important development stage in " informationization " epoch,
It is widely used in by the communication cognition technology such as Intellisense, identification technology and general fit calculation in the merging of network, also therefore
It is referred to as the third wave that world information industry develops after computer, internet.
The rapid development and application of technology of Internet of things, it is meant that the requirement to the communication technology is higher and higher, communication signal
Transmission is faced with increasing challenge.How the noise of signal transmission is reduced in complex environment, and passing at a distance
The defeated middle loss for reducing power is major issue urgently to be resolved hurrily in Internet of Things application.
Invention content
An embodiment of the present invention provides a kind of multiduty high s/n ratio formula Internet of Things radio circuit, circuit board, chip and
Internet-of-things terminal can promote the signal-to-noise ratio for receiving signal, and then improve modulatedemodulate to a certain extent to a certain extent
Adjust treatment effect of the device to signal.
The first aspect of the embodiment of the present invention provides a kind of Internet of Things rf signal reception circuit, which includes：It
Line circuit, the first filter circuit, switching circuit, the second filter circuit, improved low noise amplifier circuit and improved mixing electricity
Road；
First filter circuit includes：First filter part, second filter part, third filtering device, the 4th filtering
Device, the 5th filtering device, the 6th filtering device and the 7th filtering device；
The first end of the first filter part is connect with the first end of the second filter part, the first filter
The second end of part is connect with the first end of the third filtering device, and the second end of the second filter part is filtered with the described 4th
The first end of wave device is connected with the first end of the 5th filtering device, the second end of the third filtering device and described the
The second end of four filtering devices is connected with the first end of the 6th filtering device, the second end of the 5th filtering device and institute
State the first end connection of the 7th filtering device, the second end of the second end and the 7th filtering device of the 6th filtering device
Connection；
The output end of the antenna circuit is connect with the input terminal of first filter circuit, first filter circuit
Output end is connect with the input terminal of the switching circuit, the input of the output end of the switching circuit and second filter circuit
End connection, the output end of second filter circuit are connect with the input terminal of the low noise amplifier circuit, and the low noise is put
The output end of big circuit is connect with the mixting circuit.
Optionally, first filter circuit further includes：8th filtering device, the 9th filtering device, the tenth filtering device,
11st filtering device；
The first end of 8th filtering device is connect with the output end of the antenna circuit, the 8th filtering device
Second end is connect with the first end of the first end of the 9th filtering device and the tenth filtering device, the 9th filtering device
Second end connect with the first end of the 11st filtering device, the second end and the described 11st of the tenth filtering device
The second end of filtering device connects.
Optionally, first filter circuit further includes：12nd filtering device, the 13rd filtering device, the 14th filter
Wave device, the 15th filtering device, the 16th filtering device and the 17th filtering device；
The first end of 12nd filtering device is connect with the output end on antenna day road, the 12nd filter
The second end of part is connect with the first end of the first end of the 13rd filtering device and the 14th filtering device, and the described tenth
The second end of three filtering devices is connect with the first end of the 15th filtering device and the first end of the 16th filtering device
Connection, the second end and the 17th filtering device of the second end and the 16th filtering device of the 14th filtering device
Second end connection；The second end of 15th filtering device is connect with the first end of the 17th filtering device.
Above-mentioned first filter circuit enables to filter circuit to have good frequency-selecting special by the cascade of multiple filtering devices
Property, filter effect is enhanced to a certain extent, by promoting the inhibition to out of band signal, promotion signal quality.
Optionally, the improved low noise amplifier circuit includes that the first amplifying circuit and the first matching degree promote circuit,
Wherein the first amplifying circuit includes the first power supply, second source, third power supply, the first inductance, the second inductance, third inductance, the
One field-effect transistor, the second field-effect transistor and the first capacitance；
The output end of first power supply is connect with the first end of first inductance, the second end of first inductance with
The grid of first field-effect transistor connects, the source electrode of first field-effect transistor and the first of second inductance
End connection, the second end ground connection of second inductance, the output end of the second source promote circuit with first matching degree
Input terminal and the second field-effect transistor grid connection, first matching degree promotes the output end ground connection of circuit, institute
The source electrode for stating the second field-effect transistor is connect with the drain electrode of first field-effect transistor, second field-effect transistor
Drain electrode connect with the first end of first capacitance and third inductance first end, the second end of the third inductance with it is described
The output end of third power supply connects.
Optionally, it includes first resistor and the second capacitance that first matching degree, which promotes circuit, the first resistor and institute
State the series connection of the second capacitance.
Optionally, the improved low noise amplifier circuit includes that the second amplifying circuit and the second matching degree promote circuit,
Wherein the second amplifying circuit includes the 4th power supply, the 5th power supply, the 6th power supply, the 4th inductance, the 5th inductance, the 6th inductance, the
Three field-effect transistors, the 4th field-effect transistor and the second capacitance；
The output end of 4th power supply is connect with the first end of the 4th inductance, the second end of the 4th inductance with
The grid of the third field-effect transistor and the second matching degree promote the first end connection of circuit, and second matching degree carries
The second end for rising circuit is connect with the source electrode of the first end of the 5th inductance and third field-effect transistor, the 5th electricity
The second end of sense is grounded, and the drain electrode of the third field-effect transistor is connect with the source electrode of the 4th field-effect transistor, institute
The grid for stating the 4th field-effect transistor is connect with the output end of the 5th power supply, the drain electrode of the 4th field-effect transistor
It is connect with the first end of the first end of the 6th inductance and third capacitance, the second end and the described 6th of the 6th inductance
The output end of power supply connects.
Foregoing circuit promotes circuit in the input terminal parallel connection matching degree of low-noise amplifier, can reduce noise amplifier certainly
Influence of the body noise to amplifying circuit, the signal-to-noise ratio of boost amplifier output.
Optionally, the improved mixting circuit includes the first transistor, second transistor, third transistor, the 4th crystalline substance
Body pipe, the 5th transistor, the 6th transistor, the 4th capacitance, the 5th capacitance, second resistance, 3rd resistor, the 7th inductance and the 8th
Inductance；
The source electrode of the first transistor and the source electrode of the second transistor and connect, the leakage of the first transistor
Pole is connected with the first end of the 7th inductance, the source electrode of third transistor and the source electrode of the 4th transistor, the 7th inductance
Second end connect with the first end of the 4th capacitance and the first power supply, the second end of the 4th capacitance ground connection, described the
The drain electrode of three transistors is connect with the second resistance, and the grid of the 4th transistor connects with the grid of the 5th transistor
It connects, drain electrode and the first end of the 8th inductance, the source electrode and the described 6th of the 5th transistor of the second transistor
The source electrode of transistor connects, and second end and the first end of the second source and the 5th capacitance of the 8th inductance connect
It connects, the second end ground connection of the 5th capacitance, the drain electrode of the 6th transistor is connect with the 3rd resistor.
Above-mentioned mixting circuit adds single supply biasing circuit by the drain electrode in transistor, stabilizes the static work of transistor
Make a little.
The second aspect of the embodiment of the present invention provides a kind of chip, which includes processor, power circuit and above-mentioned
The Internet of Things rf signal reception circuit for appointing any possible realization method of first aspect or first aspect to be provided.
The third aspect of the embodiment of the present invention provides a kind of circuit board, which includes modem, at signal
The chip of device and the offer of second aspect of the embodiment of the present invention is provided.
The fourth aspect of the embodiment of the present invention provides a kind of terminal, which includes shell and third of the embodiment of the present invention
The circuit board that aspect provides.
The embodiment of the present invention has the advantages that：
Input terminal the first filter circuit of series connection of switching circuit, output end the second filter circuit of series connection, and the second filtered electrical
It is attached by certain structure between multiple filtering devices on road, there is preferable frequency-selecting effect, and then to noise signal
It is pointedly further filtered out, promotes the signal-to-noise ratio of signal in circuit.In the input terminal and lump of low-noise amplifier
Circuit is promoted with degree, influence of the noise amplifier self-noise to amplifying circuit, the noise of boost amplifier output can be reduced
Than.In addition, improved mixting circuit uses double balanced mixer circuits in the present invention, and it is inclined in the drain electrode of transistor addition single supply
It sets, stabilizes the quiescent point of transistor.
Description of the drawings
Technical solution in order to illustrate the embodiments of the present invention more clearly, below will be to needed in embodiment description
Attached drawing is briefly described.
Fig. 1 is a kind of Internet of Things rf signal reception circuit provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of first filter circuit provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of possible first filter circuit provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the first alternatively possible filter circuit provided in an embodiment of the present invention；
Fig. 5 is a kind of improved low noise amplifier circuit structural schematic diagram provided in an embodiment of the present invention；
Fig. 6 is that a kind of matching degree provided in an embodiment of the present invention promotes electrical block diagram；
Fig. 7 is the improved low noise amplifier circuit structural schematic diagram of another kind provided in an embodiment of the present invention；
Fig. 8 is a kind of improved mixting circuit structural schematic diagram provided in an embodiment of the present invention；
Fig. 9 is that an embodiment of the present invention provides a kind of possible structural schematic diagrams of chip；
Figure 10 is that an embodiment of the present invention provides a kind of possible structural schematic diagrams of circuit board.
Specific implementation mode
Below in conjunction with the attached drawing in embodiment of the present invention, the technical solution in embodiment of the present invention is carried out clear
Chu is fully described by, it is clear that described embodiment is only some embodiments of the invention, rather than whole realities
Apply mode.Based on the embodiment in the present invention, those of ordinary skill in the art institute without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Term " first ", " second " in description and claims of this specification and above-mentioned attached drawing etc. are for distinguishing
Different objects, rather than for describing particular order.In addition, term " comprising " and " having " and their any deformations, it is intended that
It is to cover and non-exclusive includes.Such as process, method, system, product or the equipment for containing series of steps or unit do not have
It is defined in the step of having listed or unit, but further includes the steps that optionally not listing or unit, or optionally also wrap
It includes for other intrinsic steps of these processes, method, product or equipment or unit.
" embodiment " is referred in the present invention it is meant that a particular feature, structure, or characteristic described can be in conjunction with the embodiments
It is included at least one embodiment of the present invention.The phrase, which occurs, in each position in the description might not each mean phase
Same embodiment, nor the independent or alternative embodiment with other embodiments mutual exclusion.Those skilled in the art are explicitly
Implicitly understand, embodiment described in the invention can be combined with other embodiments.
Referring to Fig. 1, Fig. 1 is that an embodiment of the present invention provides a kind of Internet of Things rf signal reception circuits.As described in Figure 1,
The circuit includes：It is antenna circuit 101, the first filter circuit 102, switching circuit 103, the second filter circuit 104, improved low
Noise amplifier circuit 105 and improved mixting circuit 106；
Referring to Fig. 2, Fig. 2 is a kind of structural schematic diagram of first filter circuit provided in an embodiment of the present invention, such as Fig. 2 institutes
Show, first filter circuit includes：First filter part F1, second filter part F2, third filtering device F3, the 4th filtering
Device F4, the 5th filtering device F5, the 6th filtering device F6 and the 7th filtering device F7；
The first end of first filter part F1 is connect with the first end of second filter part F2, and the of first filter part F1
Two ends are connect with the first end of third filtering device F3, the second end of second filter part F2 and the first of the 4th filtering device F4
End is connected with the first end of the 5th filtering device F5, the second end of the second end and the 4th filtering device F4 of third filtering device F3
It is connected with the first end of the 6th filtering device F6, the second end of the 5th filtering device F5 connects with the first end of the 7th filtering device F7
It connects, the second end of the 6th filtering device F6 is connect with the second end of the 7th filtering device F7；
The output end of antenna circuit 101 is connect with the input terminal of the first filter circuit 102, the first filter circuit 102 it is defeated
Outlet is connect with the input terminal of switching circuit 103, and the input terminal of the output end of switching circuit 103 and the second filter circuit 104 connects
It connects, the output end of the second filter circuit 104 is connect with the input terminal of improved low noise amplifier circuit 105, improved low noise
The output end of amplifying circuit 105 is connect with improved mixting circuit 106；
The improved low noise amplifier circuit 105 includes amplifying circuit 1052 and matching degree promotes circuit 1051, described
Matching degree promotes circuit and is used to promote the impedance matching in low noise amplifier circuit.
The embodiment of the present invention passes through input terminal the first filter circuit of series connection of switching circuit, output end the second filtered electrical of series connection
Road, and be attached by certain structure between multiple filtering devices of the second filter circuit, there is preferable frequency-selecting effect,
And then noise signal is pointedly further filtered out, promote the signal-to-noise ratio of signal in circuit.In low-noise amplifier
Input terminal parallel connection matching degree promoted circuit, influence of the noise amplifier self-noise to amplifying circuit can be reduced, further
The signal-to-noise ratio of boost amplifier output.
Optionally, referring to Fig. 3, Fig. 3 is a kind of structure of possible first filter circuit provided in an embodiment of the present invention
Schematic diagram, as shown in figure 3, the first filter circuit includes：8th filtering device F8, the 9th filtering device F9, the tenth filtering device
F10, the 11st filtering device F11；
The first end of the 8th filtering device F8 and the output end of antenna circuit connect, and the second of the 8th filtering device F8
End is connect with the first end of the first end of the 9th filtering device F9 and the tenth filtering device F10, and the of the 9th filtering device F9
Two ends are connect with the first end of the 11st filtering device F11, second end and the 11st filtering device of the tenth filtering device F10
The second end of F11 connects.Signal is by Vin input circuits, finally by the 11st filtering device F11 both end voltages as output
Voltage Vout output signals.
Optionally, referring to Fig. 4, the structure for the first alternatively possible filter circuit that Fig. 4 inventive embodiments provide is shown
It is intended to.First filter circuit includes as shown in Figure 4：12nd filtering device F12, the 13rd filtering device F13, the 14th
Filtering device F14, the 15th filtering device F15, the 16th filtering device F16 and the 17th filtering device F17；
The output end of the first end of 12nd filtering device F12 and antenna circuit connects, and the of the 12nd filtering device F12
Two ends are connect with the first end of the first end of the 13rd filtering device F13 and the 14th filtering device F14, the 13rd filter
The second end of part F13 is connect with the first end of the first end of the 15th filtering device F15 and the 16th filtering device F16, the
The second of the second end of 14 filtering device F14 and the second end of the 16th filtering device F16 and the 17th filtering device F17
End connection；The second end of 15th filtering device F15 is connect with the first end of the 17th filtering device F17.Signal is defeated by Vin
Enter circuit, finally by the 17th filtering device F17 both end voltages as output voltage Vout output signals.
Optionally, the first filter circuit can be surface acoustic wave filter circuit, and corresponding, filtering device is filtered for surface acoustic wave
Wave device.Further, filtering device F1~F17 can be resonant element, the series connection by resonant element and formation in parallel
Trapezoidal surface acoustic wave filter circuit disclosure satisfy that filter has the characteristics such as small size, low power consumption, small band attenuation.Sound surface
The piezoelectric materials such as quartz crystal, piezoelectric ceramics can be used in the manufacture material of wave filter part, can get and stablize and precipitous band logical
Curve.
In above-mentioned possible first filter circuit connection structure, including a variety of cascade systems, the series connection of filter can be with
The filter effect of corresponding branch road is promoted, the series connection of filter can improve the stability of filter circuit.In addition, filter order
Increase can make by bandwidth it is narrower, and then keep the effect of filtering more preferable.But the increase of series can also increase insertion simultaneously
Loss, and there is a problem of that manufacture difficulty is big in use, filter order can be selected in practice as the case may be.
Referring to Fig. 5, Fig. 5 is a kind of improved low noise amplifier circuit structural schematic diagram provided in an embodiment of the present invention,
As shown in figure 5, low noise amplifier circuit includes the first power supply 501, second source 502, third power supply 503, the first inductance L1, the
Two inductance L2, third inductance L3, the first field-effect transistor T1, the second field-effect transistor T2, the first capacitance C1 and first
Circuit 504 is promoted with degree.The output end of first power supply 401 is connect with the first end of the first inductance L1, and the second of the first inductance L1
End is connect with the grid of the first field-effect transistor T1, the first end of the source electrode of the first field-effect transistor T1 and the second inductance L2
Connection, the second end ground connection of the second inductance L2, the output end of second source 502 and the first matching degree promote the input of circuit 504
The connection of the grid of end and the second field-effect transistor T2, the output end ground connection of the first match circuit 504, the second field effect transistor
The source electrode of pipe T2 is connect with the drain electrode of the first field-effect transistor T1, the drain electrode of the second field-effect transistor T2 and described the
The first end of one capacitance C1 and the first end connection of third inductance L3, second end and the third power supply 503 of third inductance L3
Output end connects.
Signal inputs low noise amplifier circuit from input terminal in, and the first inductance carries out the high-frequency signal in input signal
It filters out, then signal flows through the grid arrival drain electrode of the first field-effect transistor, and by the source electrode of the second field-effect transistor
The second field-effect transistor is inputted, the front end of the second field-effect transistor is parallel with the first matching degree and promotes circuit, can be promoted
Impedance matching between signal source and load reduces power attenuation and circuit reflection, and signal is by the second field-effect transistor
Drain electrode, then filters out DC component by the first capacitance, amplified output signal is obtained from output end out, realizes
The promotion of circuit signal-to-noise ratio.
Optionally, Fig. 6 is that a kind of matching degree provided in an embodiment of the present invention promotes electrical block diagram, in Fig. 6 or Fig. 6
Matching degree promoted circuit include a capacitance and a resistance, as shown in fig. 6, matching degree promoted circuit 601 include first
Resistance R1 and the second capacitance C2, first resistor R1 connect with the second capacitance C2, and matching degree promotes input terminal and the output of circuit 601
End is in parallel with low noise amplifier circuit progress respectively.Signal is inputted from input terminal in, flows through first resistor and the second capacitance, from defeated
Outlet out outputs.
Optionally, the second capacitance that matching degree is promoted in circuit includes paper dielectric capacitance, mica capacitor or ceramic condenser.Paper is situated between
Capacitance has ratio capacitance big, and capacitance swing is wide, and operating voltage is high, it is at low cost the advantages that, mica capacitor has dielectric loss
It is small, the advantages that insulation resistance is big, temperature coefficient is small, the high-frequency circuit suitable for the embodiment of the present invention.Ceramic condenser have make
With temperature height, specific capacity is big, and moisture resistance is good, and dielectric loss is small, and capacitance temperature factor can be in a wide range of interior the advantages that selecting, can
Circuit suitable for the embodiment of the present invention.
Optionally, referring to Fig. 7, Fig. 7 is the improved low noise amplifier circuit knot of another kind provided in an embodiment of the present invention
Structure schematic diagram.As shown in fig. 7, the low noise amplifier circuit, which includes the second amplifying circuit and the second matching degree, promotes circuit 704,
Wherein the second amplifying circuit includes the 4th power supply 701, the 5th power supply 702, the 6th power supply 703, the 4th inductance L4, the 5th inductance
L5, the 6th inductance L6, third field-effect transistor L3, the 4th field-effect transistor L4 and the second capacitance C2.4th power supply 701
Output end is connect with the first end of the 4th inductance L4, the second end of the 4th inductance L4 and the grid of third field-effect transistor T3 with
And second matching degree promote the first end connection of circuit 704, the second matching degree promotes second end and the 5th inductance L5 of circuit 704
First end and third field-effect transistor T3 source electrode connection, the second end ground connection of the 5th inductance L5, third field-effect is brilliant
The drain electrode of body pipe T3 is connect with the source electrode of the 4th field-effect transistor T4, the grid and the 5th power supply of the 4th field-effect transistor T4
702 output end connection, the drain electrode of the 4th field-effect transistor T4 and the first end of the 6th inductance L6 and the second capacitance C2's
First end connects, and the second end of the 6th inductance L6 is connect with the output end of the 6th power supply 703.
Signal inputs low noise amplifier circuit from input terminal in, flows through the 4th inductance, the second matching degree promotes circuit, third
Field-effect transistor, the 5th inductance, the 4th field-effect transistor, the 6th inductance, third capacitance, from output end out output amplifications
Signal afterwards.Include that amplifying circuit and matching degree promote circuit in the circuit, in the input terminal parallel connection matching degree of amplifying circuit
Circuit is promoted, can make to realize impedance matching between signal source and load, so that output power reaches maximum value, reduce work(
Rate is lost.Wherein matching degree is promoted in circuit, may include capacitance and resistance, for making load resistance and transmission lines matching, into
One step can prevent the reflection problems in low noise amplifier circuit, ensure efficiency of transmission.Optionally, the second matching degree promotes circuit
It can also be realized by resistance and capacitance series connection.
In the input terminal of low noise amplifier circuit, one in parallel promotes circuit by the matching degree that capacitance and resistance form, can be with
So that low noise amplifier circuit is matched with signal source impedance, and then promote the precision of amplifying circuit, so that outside can acquire most
Big signal power.
Optionally, referring to Fig. 8, Fig. 8 is a kind of improved mixting circuit structural schematic diagram provided in an embodiment of the present invention.
As shown in figure 8, the improved mixting circuit includes the first transistor M1, second transistor M2, third transistor M3, the 4th crystalline substance
Body pipe M4, the 5th transistor M5, the 6th transistor M6, the 4th capacitance C4, the 5th capacitance C5, second resistance R2,3rd resistor R3,
7th inductance L7, the 8th inductance L8, the first power supply S1 and second source S2；
The source electrode of the first transistor M1 and the source electrode of the second transistor M2 and connect, the first transistor
The drain electrode of M1 is connected with the source electrode of the first end of the 7th inductance L7, the source electrode D and the 4th transistor M4 of third transistor M3,
The second end of the 7th inductance L7 is connect with the first end of the 4th capacitance C4 and the first power supply S1, the 4th capacitance C4
Second end ground connection, the drain electrode of the third transistor M3 connect with the second resistance R2, the grid of the 4th transistor M4
Pole is connect with the grid of the 5th transistor M5, the drain electrode of the second transistor M2 and the first of the 8th inductance L8
It holds, the source electrode of the 5th transistor M5 is connected with the source electrode of the 6th transistor M6, the second end of the 8th inductance L8
It is connect with the first end of the second source S2 and the 5th capacitance C5, the second end ground connection of the 5th capacitance C5 is described
The drain electrode of 6th transistor M6 is connect with the 3rd resistor R3.Wherein radiofrequency signal is inputted from the grid of M1 and the grid of M2,
Local oscillation signal is inputted from the grid of the grid of M4, the grid of M5, the grid of M3 and M6, and signal flows through M3, M4, M5 and M6, from M4
Drain electrode and M5 drain electrode export.
Above-mentioned improved mixting circuit is double balanced mixer circuits, and double balanced mixer circuits have isolation performance height, linearly
The advantages that range is big can have local frequency and intermediate-freuqncy signal good vibration isolation, promotion signal-to-noise ratio, in addition in the first crystalline substance
The drain series single supply of body pipe and second transistor biases, and stabilizes the quiescent point of transistor.
A kind of chip is provided in another embodiment of the present invention, which connects comprising radiofrequency signal as described in Figure 1
Receive circuit, power circuit and processor.Referring to Fig. 9, Fig. 9 is that an embodiment of the present invention provides a kind of possible structures of chip
Schematic diagram.As shown in figure 9, chip includes：Power circuit 801, processor 802 and rf signal reception circuit 803.Above-mentioned power supply
Its major function of circuit 801 to provide power supply to the chip, above-mentioned processor 802 for example can be for example can be central processing
Device (Central Processing Unit, CPU), general processor, digital signal processor (Digital Signal
Processor, DSP), application-specific integrated circuit (Application-Specific Integrated Circuit, ASIC) is existing
Field programmable gate array (Field Programmable Gate Array, FPGA) or other programmable logic device, hardware
Component or its arbitrary combination, rf signal reception circuit 803 are the either circuit described in above-described embodiment.
Another embodiment of the embodiment of the present invention provides a kind of circuit board, which includes modem, base band
The chip provided in signal processor and above-described embodiment.Referring to Fig. 10, Figure 10 is that an embodiment of the present invention provides circuit boards
A kind of possible structural schematic diagram.As shown in Figure 10, which includes：Modem 901, signal processor 902, core
Piece 903 and bus 904.Modem 901, signal processor 902, chip 903 are connected by bus 904.Modem
901 mainly for the treatment of wireless signal by treated the baseband signal of chip 903, signal processor 902 mainly for the treatment of
Signal after the demodulation of modem 901, chip 903 are mainly used for being handled radio frequency signal to obtain base band letter
Number.
A kind of terminal is provided in another embodiment of the present invention, which includes foregoing circuit plate and shell.
Above specific implementation mode has carried out into one the purpose, technical solution and advantageous effect of the embodiment of the present invention
Step is described in detail, it should be understood that these are only the specific implementation mode of the embodiment of the present invention, is not used to limit this
The protection domain of inventive embodiments, all any modifications on the basis of the technical solution of the embodiment of the present invention, made are equal
Replace, improve etc., it should all be included within the protection domain of the embodiment of the present invention.
Claims (10)
1. a kind of Internet of Things rf signal reception circuit, which is characterized in that the circuit includes：Antenna circuit, the first filtered electrical
Road, switching circuit, the second filter circuit, improved low noise amplifier circuit and improved mixting circuit；
First filter circuit includes：First filter part, second filter part, third filtering device, the 4th filtering device,
5th filtering device, the 6th filtering device and the 7th filtering device；
The first end of the first filter part is connect with the first end of the second filter part, the first filter part
Second end is connect with the first end of the third filtering device, the second end of the second filter part and the 4th filter
The first end of part is connected with the first end of the 5th filtering device, and the second end of the third filtering device is filtered with the described 4th
The second end of wave device is connected with the first end of the 6th filtering device, the second end of the 5th filtering device and described the
The first end of seven filtering devices connects, and the second end of the 6th filtering device connects with the second end of the 7th filtering device
It connects；
The output end of the antenna circuit is connect with the input terminal of first filter circuit, the output of first filter circuit
End is connect with the input terminal of the switching circuit, and the output end of the switching circuit and the input terminal of second filter circuit connect
It connects, the output end of second filter circuit is connect with the input terminal of the improved low noise amplifier circuit, described improved
The output end of low noise amplifier circuit is connect with the improved mixting circuit；
The improved low noise amplifier circuit includes amplifying circuit and matching degree promotes circuit, and the matching degree promotes circuit and uses
In promoting the impedance matching in low noise amplifier circuit.
2. circuit according to claim 1, which is characterized in that first filter circuit further includes：8th filtering device,
Nine filtering devices, the tenth filtering device and the 11st filtering device；
The first end of 8th filtering device is connect with the output end of the antenna circuit, and the second of the 8th filtering device
End is connect with the first end of the first end of the 9th filtering device and the tenth filtering device, the 9th filtering device
Second end connect with the first end of the 11st filtering device, the second end and the described 11st of the tenth filtering device
The second end of filtering device connects.
3. circuit according to claim 1, which is characterized in that first filter circuit further includes：12nd filtering device,
13rd filtering device, the 14th filtering device, the 15th filtering device, the 16th filtering device and the 17th filtering device；
The first end of 12nd filtering device is connect with the output end on antenna day road, the 12nd filtering device
Second end is connect with the first end of the first end of the 13rd filtering device and the 14th filtering device, the 13rd filter
The second end of wave device is connect with the first end of the 15th filtering device and the connection of the first end of the 16th filtering device,
The of the second end of the second end of 14th filtering device and the 16th filtering device and the 17th filtering device
Two ends connect；The second end of 15th filtering device is connect with the first end of the 17th filtering device.
4. circuit according to claim 1, which is characterized in that the improved low noise amplifier circuit includes the first amplification electricity
Road and the first matching degree promote circuit, and the first end that first matching degree promotes circuit is connect with first amplifying circuit,
First matching degree promotes the second end ground connection of circuit, and first amplifying circuit includes the first power supply, second source, third
Power supply, the first inductance, the second inductance, third inductance, the first field-effect transistor, the second field-effect transistor and the first capacitance；
The output end of first power supply is connect with the first end of first inductance, the second end of first inductance with it is described
The grid of first field-effect transistor connects, and the source electrode of first field-effect transistor and the first end of second inductance connect
It connects, the second end ground connection of second inductance, the output end of the second source promotes the defeated of circuit with first matching degree
Entering the grid connection of end and the second field-effect transistor, first matching degree promotes the output end ground connection of circuit, and described the
The source electrode of two field-effect transistors is connect with the drain electrode of first field-effect transistor, the leakage of second field-effect transistor
Pole is connect with the first end of the first end of first capacitance and third inductance, the second end of the third inductance and described the
The output end of three power supplys connects.
5. circuit as claimed in claim 4, which is characterized in that it includes first resistor and second that first matching degree, which promotes circuit,
Capacitance, the first resistor are connected with second capacitance.
6. circuit according to claim 1, which is characterized in that the improved low noise amplifier circuit includes the second amplification electricity
Road and the second matching degree promote circuit, and second amplifying circuit promotes circuit with second matching degree and connects, wherein second
Amplifying circuit includes the 4th power supply, the 5th power supply, the 6th power supply, the 4th inductance, the 5th inductance, the 6th inductance, third field-effect
Transistor, the 4th field-effect transistor and third capacitance；
The output end of 4th power supply is connect with the first end of the 4th inductance, the second end of the 4th inductance with it is described
The grid of third field-effect transistor and the second matching degree promote the first end connection of circuit, and second matching degree promotes electricity
The second end on road is connect with the source electrode of the first end of the 5th inductance and third field-effect transistor, the 5th inductance
Second end is grounded, and the drain electrode of the third field-effect transistor connect with the source electrode of the 4th field-effect transistor, and described the
The grid of four field-effect transistors is connect with the output end of the 5th power supply, the drain electrode of the 4th field-effect transistor and institute
State the first end of the 6th inductance and the first end connection of third capacitance, second end and the 6th power supply of the 6th inductance
Output end connection.
7. circuit as described in claim 1, which is characterized in that the improved mixting circuit includes the first transistor, second
Transistor, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 4th capacitance, the 5th capacitance, the second electricity
Resistance, 3rd resistor, the 7th inductance, the 8th inductance, the first power supply and second source；
The source electrode of the first transistor and the source electrode of the second transistor and connect, the drain electrode of the first transistor and
The first end of 7th inductance, the source electrode of the third transistor are connected with the source electrode of the 4th transistor, and the described 7th
The second end of inductance is connect with the first end of the 4th capacitance and first power supply, the second termination of the 4th capacitance
Ground, the drain electrode of the third transistor are connect with the second resistance, grid and the 5th crystal of the 4th transistor
The grid of pipe connects, drain electrode and the first end of the 8th inductance, the source electrode of the 5th transistor of the second transistor
It is connected with the source electrode of the 6th transistor, the second end of the 8th inductance and the second source and the 5th capacitance
First end connects, and the second end ground connection of the 5th capacitance, the drain electrode of the 6th transistor is connect with the 3rd resistor.
8. a kind of chip, which is characterized in that the chip includes described in processor, power circuit and claim any one of 1-7
Rf signal reception circuit.
9. a kind of circuit board, which is characterized in that the circuit board includes modem, signal processor and claim 8 institute
The chip stated.
10. a kind of terminal, which is characterized in that the terminal includes the circuit board described in shell and claim 9.
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|---|---|---|---|
| CN201810099443.9A CN108418594B (en) | 2018-01-31 | 2018-01-31 | Multipurpose high signal-to-noise ratio type Internet of things radio frequency circuit, circuit board, chip and terminal |
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| CN201810099443.9A CN108418594B (en) | 2018-01-31 | 2018-01-31 | Multipurpose high signal-to-noise ratio type Internet of things radio frequency circuit, circuit board, chip and terminal |
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| CN108418594B CN108418594B (en) | 2021-06-22 |
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| CN103765674A (en) * | 2011-08-31 | 2014-04-30 | 高通股份有限公司 | Wireless device with 3-D antenna system |
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| CN101471640A (en) * | 2007-12-27 | 2009-07-01 | 中国科学院声学研究所 | Narrow-band filter component |
| CN103765674A (en) * | 2011-08-31 | 2014-04-30 | 高通股份有限公司 | Wireless device with 3-D antenna system |
| CN104012006A (en) * | 2011-11-03 | 2014-08-27 | 华为技术有限公司 | Compensation apparatus for receiver asymmetric wide passband frequency respsonse with 25% duty cycle passive mixer |
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| CN108418594B (en) | 2021-06-22 |
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