CN108417569A - LED substrate and LED light source module - Google Patents
LED substrate and LED light source module Download PDFInfo
- Publication number
- CN108417569A CN108417569A CN201810449355.7A CN201810449355A CN108417569A CN 108417569 A CN108417569 A CN 108417569A CN 201810449355 A CN201810449355 A CN 201810449355A CN 108417569 A CN108417569 A CN 108417569A
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- China
- Prior art keywords
- reflective coating
- substrate
- led
- reflective
- refractive index
- Prior art date
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000000576 coating method Methods 0.000 claims abstract description 61
- 239000011248 coating agent Substances 0.000 claims abstract description 53
- 238000004020 luminiscence type Methods 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention discloses a kind of LED substrate, it is used to fix LED luminescence chips, several first reflective coatings and the second reflective coating are alternatingly arranged on the reflecting surface of substrate, the one of several first reflective coatings is located at top layer, the refractive index of first reflective coating is more than the refractive index of the second reflective coating, the thickness of first reflective coating and the second reflective coating is respectively d1 and d2, the refractive index of first reflective coating and the second reflective coating is respectively m1 and m2, the centre wavelength of LED luminescence chips is λ, then d1=λ/4*m1, d2=λ/4*m2；It is alternate curing in LED substrate of the present invention to have the first reflective coating of structure and the second reflective coating for meeting Bragg mirror, when light is radiated on substrate, it can be totally reflected in the interface of the first film layer and the second film layer, to greatly improve the reflection efficiency of substrate, and the selection of substrate is made to be no longer limited by reflectivity of itself material to light.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of LED substrate that reflectivity is high and LED light source modules.
Background technology
With the shortage of resource, the deterioration of environment, environmental protection becomes the theme of current each industry.Semiconductor lighting is to section
Energy environment protection significance is great.Due to LED have energy conservation and environmental protection, long lifespan, light efficiency original text, rich in color, shock-proof durable, it is safe and reliable,
The series of advantages such as relevant block, intelligent control, are widely used.It is illuminated as a new generation, the most prominent advantage of LED light source is exactly
Light efficiency, it is energy saving, it is that LED luminescence chips are solidificated on substrate when manufacturing LED light source, there is ceramic substrate, aluminum substrate, and
Other substrates that its composite material is formed, the reflective surface that the light that LED luminescence chips are sent out need to pass through substrate is gone out, therefore base
The reflection efficiency of plate just determines the light efficiency of LED light source module.In contrast, aluminum substrate is higher than the reflectivity of ceramic substrate,
However whether ceramic substrate or the current reflectivity of aluminum substrate are not too ideal, especially because the heat heat of ceramic substrate
Performance and excellent insulating property are the primary selections of most of LED light source module factories man, but this can sacrifice a part of light
Effect.
Invention content
The object of the present invention is to provide a kind of LED substrate, to greatly improve the reflection efficiency of LED substrate, to improve light
Effect.
It is a further object of the present invention to provide a kind of LED light source modules, to greatly improve the reflection efficiency of LED substrate, from
And improve light efficiency.
To achieve the goals above, the invention discloses a kind of LED substrate, it is used to fix LED luminescence chips, the base
One of several first reflective coatings and the second reflective coating, several first reflective coatings are alternatingly arranged on the reflecting surface of plate
Person is located at top layer, and the refractive index of first reflective coating is more than the refractive index of second reflective coating, and described first is anti-
The thickness for penetrating film layer and second reflective coating is respectively d1 and d2, first reflective coating and second reflectance coating
The refractive index of layer is respectively m1 and m2, and the centre wavelength of the LED luminescence chips is λ, then d1=λ/4*m1, d2=λ/4*m2.
Compared with prior art, alternate curing in LED substrate of the present invention to have the first reflective coating of multilayer and the second reflectance coating
Layer, and the combination of the thickness of the first reflective coating and the second reflective coating meets the structure of Bragg mirror, when light is radiated at
When on substrate, it can be totally reflected in the interface of the first film layer and the second film layer, to greatly improve the reflection efficiency of substrate,
And the selection of substrate is made to be no longer limited by reflectivity of itself material to light.
Preferably, first reflective coating is titanium pentoxide film, second reflective coating is silicon dioxide film.
Preferably, first reflective coating and second reflective coating are solid by ion beam electron assisted deposition technique
Change on the substrate.
Preferably, the substrate is ceramic substrate.
Preferably, curing first reflection on the ceramic substrate by the ion beam electron assisted deposition technique
When film layer and second reflective coating, it is 1.5*10 that the ceramic substrate, which is in vacuum degree,-3Pa, the environment that temperature is 120 DEG C
In, plated film time is 100-150 minutes.
Preferably, first reflective coating and second reflective coating are 26-32 layers.
The invention also discloses a kind of LED light source modules, including the luminous cores of the LED of substrate and solidification on the substrate
Piece, the substrate are as described above.
Description of the drawings
Fig. 1 is the planar structure schematic diagram of LED light source module of the embodiment of the present invention.
The enlarged structure schematic diagram of mirror-reflection film layer in Fig. 2 LED light source modules of the embodiment of the present invention.
Specific implementation mode
For technology contents, structure feature, realization principle and the objects and the effects that the present invention will be described in detail, tie below
It closes embodiment and attached drawing is coordinated to be explained in detail.
The present invention discloses a kind of LED light source module, and as depicted in figs. 1 and 2, including substrate 1 and solidification are on substrate 1
LED luminescence chips 2 are coated with mirror-reflection film layer on the reflecting surface of substrate 1, which is several be alternately arranged
One reflective coating 30 and the second reflective coating 31, wherein being the first reflective coating 30, the first reflective coating 30 positioned at top layer
Refractive index be more than the refractive index of the second reflective coating 31, the thickness difference of the first reflective coating 30 and the second reflective coating 31
For d1 and d2, the refractive index of the first reflective coating 30 and the second reflective coating 31 is to distinguish m1 and m2, in LED luminescence chips 2
The a length of λ of cardiac wave, then d1=λ/4*m1, d2=λ/4*m2.
Meet the first reflective coating 30 and second reflection of distribution Bragg reflector structure due to being coated with multilayer on substrate 1
Film layer 31, therefore when light is irradiated to the reflecting surface of substrate 1, light is in the first reflective coating 30 and the second reflective coating 31
Approximate total reflection occurs for intersection, to greatly improve the reflection efficiency of substrate 1 so that the selection of LED substrate 1 is no longer limited by
The reflectivity of material, either ceramic substrate 1 or aluminum substrate 1, also or the composite substrate of other materials 1, can obtain compared with
High reflectivity, so that LED light source module obtains higher light efficiency.For the first reflective coating 30 and the second reflective coating
The selection of 31 quantity is directly related to the height of the reflectivity of substrate 1, for this purpose, using alternately titanium pentoxide film and two are coated with
Ceramic substrate 1, the LED luminescence chips 2 of silicon oxide film send out white light and have done following groups contrast experiment, experiment test difference plated film
Single branch LED light source module of number of plies average illumination at 3 meters of direct projection direction in its center.
It follows that when coating layers are at 26-32 layers, the reflecting effect of ceramic substrate 1 reaches best.
In order to reach better solidification effect, the first reflective coating 30 and the second reflective coating 31 are auxiliary by ion beam electron
Help coating process solidification on substrate 1；Preferably, when the plated film on ceramic substrate 1, ceramic substrate 1 is in vacuum degree
1.5*10-3In Pa, the environment that temperature is 120 DEG C, plated film time is 100-150 minutes, after the completion of the coating process of substrate 1, is led to
Normal silk-screen printing technique is crossed in surface printing circuit, baking-curing forms high reflectance minute surface ceramic circuit-board so that base
The light reflectivity on 1 surface of plate is promoted to 98% or more, is higher than the light reflectivity of specular aluminium, to which ceramic substrate 1LED be substantially improved
The comprehensive performance of light source module group.
Above disclosed is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore according to equivalent variations made by scope of the present invention patent, still falls within the range that the present invention is covered.
Claims (7)
1. a kind of LED substrate is used to fix LED luminescence chips, which is characterized in that be alternately arranged on the reflecting surface of the substrate
There are several first reflective coatings and the second reflective coating, the one of several first reflective coatings is located at top layer, and described
The refractive index of one reflective coating is more than the refractive index of second reflective coating, first reflective coating and second reflection
The thickness of film layer is respectively d1 and d2, the refractive index of first reflective coating and second reflective coating be respectively m1 and
The centre wavelength of m2, the LED luminescence chips are λ, then d1=λ/4*m1, d2=λ/4*m2.
2. LED substrate according to claim 1, which is characterized in that first reflective coating is titanium pentoxide film, institute
It is silicon dioxide film to state the second reflective coating.
3. LED substrate according to claim 1, which is characterized in that first reflective coating and second reflectance coating
Layer is cured by ion beam electron assisted deposition technique on the substrate.
4. LED substrate according to claim 3, which is characterized in that the substrate is ceramic substrate.
5. LED substrate according to claim 4, which is characterized in that existed by the ion beam electron assisted deposition technique
When curing first reflective coating and second reflective coating on the ceramic substrate, the ceramic substrate is in vacuum degree
For 1.5*10-3In Pa, the environment that temperature is 120 DEG C, plated film time is 100-150 minutes.
6. LED substrate according to claim 1, which is characterized in that first reflective coating and second reflectance coating
Layer is 26-32 layers.
7. a kind of LED light source module includes the LED luminescence chips of substrate and solidification on the substrate, which is characterized in that described
Substrate is as described in any one of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810449355.7A CN108417569A (en) | 2018-05-11 | 2018-05-11 | LED substrate and LED light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810449355.7A CN108417569A (en) | 2018-05-11 | 2018-05-11 | LED substrate and LED light source module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108417569A true CN108417569A (en) | 2018-08-17 |
Family
ID=63138808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810449355.7A Pending CN108417569A (en) | 2018-05-11 | 2018-05-11 | LED substrate and LED light source module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108417569A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100201280A1 (en) * | 2007-09-12 | 2010-08-12 | Photonstar Led Limited | Electrically isolated vertical light emitting diode structure |
| CN103367617A (en) * | 2012-04-02 | 2013-10-23 | Jds尤尼弗思公司 | Broadband dielectric reflectors for LED |
| CN103489977A (en) * | 2013-09-29 | 2014-01-01 | 映瑞光电科技(上海)有限公司 | Light-emitting diode with all-dimensional reflecting mirror and corresponding method of light-emitting diode |
| CN103668067A (en) * | 2013-12-09 | 2014-03-26 | 西南技术物理研究所 | Preparation method of wide-angle multiband infrared high-reflective film system |
| US20170186919A1 (en) * | 2015-12-29 | 2017-06-29 | Light Share, LLC | Optoelectronic Semiconductor Devices with Enhanced Light Output |
| JP2017116931A (en) * | 2015-12-17 | 2017-06-29 | Hoya株式会社 | Methods for manufacturing substrate with multilayer reflection film, reflective mask blank, reflective mask, and semiconductor device |
| CN208225878U (en) * | 2018-05-11 | 2018-12-11 | 深圳市方宇鑫材料科技有限公司 | LED substrate and LED light source mould group |
-
2018
- 2018-05-11 CN CN201810449355.7A patent/CN108417569A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100201280A1 (en) * | 2007-09-12 | 2010-08-12 | Photonstar Led Limited | Electrically isolated vertical light emitting diode structure |
| CN103367617A (en) * | 2012-04-02 | 2013-10-23 | Jds尤尼弗思公司 | Broadband dielectric reflectors for LED |
| CN103489977A (en) * | 2013-09-29 | 2014-01-01 | 映瑞光电科技(上海)有限公司 | Light-emitting diode with all-dimensional reflecting mirror and corresponding method of light-emitting diode |
| CN103668067A (en) * | 2013-12-09 | 2014-03-26 | 西南技术物理研究所 | Preparation method of wide-angle multiband infrared high-reflective film system |
| JP2017116931A (en) * | 2015-12-17 | 2017-06-29 | Hoya株式会社 | Methods for manufacturing substrate with multilayer reflection film, reflective mask blank, reflective mask, and semiconductor device |
| US20170186919A1 (en) * | 2015-12-29 | 2017-06-29 | Light Share, LLC | Optoelectronic Semiconductor Devices with Enhanced Light Output |
| CN208225878U (en) * | 2018-05-11 | 2018-12-11 | 深圳市方宇鑫材料科技有限公司 | LED substrate and LED light source mould group |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
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