CN108411248A - Mask plate and preparation method thereof - Google Patents
Mask plate and preparation method thereof Download PDFInfo
- Publication number
- CN108411248A CN108411248A CN201810174125.4A CN201810174125A CN108411248A CN 108411248 A CN108411248 A CN 108411248A CN 201810174125 A CN201810174125 A CN 201810174125A CN 108411248 A CN108411248 A CN 108411248A
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- district
- substrate
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- mask plate
- thickness
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
A kind of mask plate of present invention offer and preparation method thereof, belongs to mask plate technical field, can at least partly solve the problems, such as to easy to produce fold in existing fine metal mask version.The mask plate of the present invention includes adjacent pattern area and enclosed area, and the opening and blocking portion of period profile are equipped in the pattern area, and it is transition sub-district, sub-district centered on remaining close to the marginal portion in pattern area to have substrate, the enclosed area in the enclosed area；From the direction of the boundary direction center sub-district adjacent with pattern area, the thickness of substrate gradually increases in transition sub-district；The thickness of substrate is identical everywhere in the sub-district of center.
Description
Technical field
The invention belongs to mask plate technical fields, and in particular to a kind of mask plate and preparation method thereof.
Background technology
Many structures (such as EL luminescent films) in display base plate (such as organic light-emitting diode display substrate) can be by using
The evaporation process of fine metal mask version (FMM, Fine Metal Mask) is formed.As shown in Figure 1, fine metal mask version is set
There are the opening 1 and blocking portion 2 of period profile, so that evaporation material is only capable of being deposited on required position (such as in pixel) by opening 1,
And the evaporation material of remaining position is then blocked the blocking of portion 2.
The viewing area (areas AA) of part display base plate is non-rectangle polymorphic structure, i.e., with no pixel in rectangular area
Non-display area (such as the region of corresponding microphone, camera).As shown in Figure 1, fine metal corresponding with such display base plate
Mask plate is also classified into pattern area 91 and astomous enclosed area 92 with opening 1.
As shown in Fig. 2, having the opening 1 of periodic distribution, the lining of enclosed area 92 in the pattern area 91 of fine metal mask version
Then imperforation in bottom 3, therefore in the two boundaries on either side, structure, stress distribution of fine metal mask version etc. differ greatly.And due to
Fine metal mask general thickness is relatively thin, and intensity is relatively low, thus throw the net at it, magnetic-adsorption etc. durings, the above boundary is easy
The problems such as generating fold, keeping the deposition position of evaporation material inaccurate, cause colour mixture, reduces product yield.
Invention content
The present invention at least partly solves the problems, such as to easy to produce fold in existing fine metal mask version, and providing one kind can
Avoid the mask plate and preparation method thereof of fold.
Technical solution is a kind of mask plate used by solving present invention problem comprising adjacent pattern area and envelope
Closed zone is equipped with the opening and blocking portion of period profile in the pattern area, has substrate in the enclosed area,
The enclosed area is transition sub-district, sub-district centered on remaining close to the marginal portion in pattern area；From with pattern area
On the direction of adjacent boundary direction center sub-district, the thickness of substrate gradually increases in transition sub-district；It is served as a contrast everywhere in the sub-district of center
The thickness at bottom is identical.
Preferably, in the transition sub-district substrate thickness be less than blocking portion thickness；
The thickness of substrate is equal to the thickness of blocking portion in the center sub-district.
Preferably, the thickness of the substrate is less than the thickness of blocking portion.
It may further be preferable that being additionally provided with the adjustment portion of period profile in the enclosed area；Wherein, the week of the adjustment portion
Phase pattern is identical as the periodic pattern of blocking portion, and the substrate is between adjustment portion.
It may further be preferable that the thickness of the adjustment portion is equal to the thickness of blocking portion.
Preferably, the substrate has opposite first surface and second surface；
The first surface of substrate is mutually parallel with second surface in the center sub-district；
The first surface of substrate is obliquely installed with respect to the first surface of substrate in the sub-district of center in the transition sub-district, described
The second surface of substrate is obliquely installed with respect to the first surface of substrate in the sub-district of center in transition sub-district.
Preferably, the mask plate is fine metal mask version.
Technical solution is a kind of preparation method of above-mentioned mask plate used by solving present invention problem comprising：
Bottom plate in homogeneous thickness is provided；
The material at the bottom plate corresponding opening is removed, to form opening and blocking portion；And the bottom plate was corresponded to
The different location crossed at sub-district carries out being thinned for respective degrees, to form the substrate in transition sub-district.
Preferably, described that the thinned packet that the different location at transition sub-district carries out respective degrees is corresponded to the bottom plate
It includes：
It is corresponded at transition sub-district with etching agent processing base plate to be thinned, wherein the etching agent for handling each position has
Concentration corresponding with the thinned degree in the position and/or flow velocity.
It may further be preferable that having the mask plate of opposite first surface and second surface, the use to above-mentioned substrate
Etching agent processing base plate corresponds at transition sub-district：
The two sides at transition sub-district are corresponded to etching agent processing base plate respectively, to be respectively formed the first face and of substrate
Two faces.
In the mask plate of the present invention, the boundaries on either side of pattern area and enclosed area is to have the region being open and substrate very respectively
Thin region (transition sub-district), the differences such as structure, stress distribution of the two are smaller；And the substrate thickness in transition sub-district be also by
It is gradually increased, have no mutation；Therefore, throw the net, magnetic-adsorption etc. durings, there is no stress to differ greatly in the mask plate
Boundary, would not also generate fold, to can avoid colour mixture the problems such as, improve product yield.
Description of the drawings
Fig. 1 is a kind of existing overlooking structure diagram of mask plate；
Fig. 2 is a kind of existing part section structural representation of mask plate；
Fig. 3 is a kind of overlooking structure diagram of mask plate of the embodiment of the present invention；
Fig. 4 is a kind of part section structural representation of mask plate of the embodiment of the present invention；
Fig. 5 is the part section structural representation of another mask plate of the embodiment of the present invention；
Fig. 6 is the part section structural representation of another mask plate of the embodiment of the present invention；
Wherein, reference numeral is：1, it is open；2, blocking portion；3, substrate；4, adjustment portion；91, pattern area；92, enclosed area；
921, transition sub-district；922, center sub-district.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1：
As shown in Figures 3 to 6, the present embodiment provides a kind of mask plates.
The mask plate of the present embodiment can be used in evaporation process, such as form organic diode for being deposited in display base plate
(OLED) EL luminescent films etc..
Preferably, which is fine metal mask version (FMM), because fine metal mask version body intensity is relatively low,
It is easier to generate fold, therefore is more suitable for the present invention.
Of course it is to be understood that the above mask plate is alternatively other forms, and it can also be used in other techniques such as photoetching.
The mask plate of the present embodiment includes adjacent pattern area 91 and enclosed area 92, and period profile is equipped in pattern area 91
Be open 1 and blocking portion 2, has substrate 3 in enclosed area 92；And enclosed area 92 is transition sub-district close to the marginal portion in pattern area 91
921, sub-district 922 centered on remaining；From the direction of the boundary direction center sub-district 922 adjacent with pattern area 91, transition is sub
The thickness of substrate 3 gradually increases in area 921；The thickness of substrate 3 is identical everywhere in center sub-district 922.
As shown in figure 3, the pattern area 91 in the mask plate of the present embodiment corresponds to the viewing area of display base plate, wherein there is the period
Property distribution opening 1, opening 1 corresponds to the specific position of viewing area, and (a such as row pixel corresponds to an opening 1, or each pixel pair
Answer an opening 1), for make evaporation material by by corresponding position form required structure；It is then not allow to steam between opening 1
Plate material by blocking portion 2.And enclosed area 92 then corresponds to the non-display area of display base plate (such as the area of corresponding microphone, camera
Domain), enclosed area 92 is completely enclosed without being open, therefore does not allow evaporation material to pass through.
As shown in Figures 3 to 6, it is different from existing mask plate, the enclosed area 92 of the mask plate of the present embodiment is also divided into two
Sub-district, wherein it is adjacent for transition sub-district 921 with pattern area 91 (region for having opening 1), centered on pattern area 91
Sub-district 922.Moreover, in transition sub-district 921, the substrate 3 (i.e. the body part of mask plate) of mask plate is thick at different locations
Degree is different, and thickness is smaller at pattern area 91, and thickness is bigger at center sub-district 922, i.e., 3 thickness of substrate is from figure
The gradual change form that case area 91 is gradually increased to center sub-district 922；And center sub-district 922 everywhere, the thickness of substrate 3 is then identical.
In the mask plate of the present embodiment, the boundaries on either side of pattern area 91 and enclosed area 92 is the region with opening 1 respectively
Very thin region (the transition sub-district 921) with substrate 3, the differences such as structure, stress distribution of the two are smaller；And in transition sub-district 921
3 thickness of substrate be also gradually it is increased, have no mutation；Therefore, throw the net, magnetic-adsorption etc. durings, in the mask plate not
There can be the boundary that stress differs greatly, would not also generate fold, so that the problems such as can avoid colour mixture, improves product yield.
Preferably, in transition sub-district 921 substrate 3 thickness be less than blocking portion 2 thickness；Substrate 3 in center sub-district 922
Thickness is equal to the thickness of blocking portion 2.
As shown in figure 4, a kind of mode as the present embodiment, the substrate 3 in transition sub-district 921 has the thickness of gradual change,
And the thickness of substrate 3 can then be equal to the thickness of blocking portion 2 in pattern area 91 in center sub-district 922.Thus the mask plate is being prepared
When, as long as not performed etching to the position for corresponding to center sub-district 922 and blocking portion 2 in bottom plate, then remaining bottom plate is distinguished naturally
Formation center sub-district 922 and blocking portion 2.
Preferably, as the another way of the present embodiment, the thickness of substrate 3 is less than the thickness of blocking portion 2.
As shown in figure 5, to further decrease the architectural difference in pattern area 91 and enclosed area 92, substrate can also be corresponded to and be closed
The part in area 92 (especially center sub-district 922) also carries out a degree of etching (etching partially), and the thickness of wherein substrate 3 is made to subtract
It is as thin as the thickness smaller (but opening cannot be generated) than blocking portion 2.
It is furthermore preferred that being additionally provided with the adjustment portion 4 of period profile in enclosed area 92；Wherein, the periodic pattern of adjustment portion 4 and resistance
The periodic pattern of stopper 2 is identical, and substrate 3 is between adjustment portion 4.
As shown in fig. 6, to make enclosed area 92 and the structure in pattern area 91 even more like, can be also provided in enclosed area 92
Adjustment portion 4 is arranged in " structure identical with blocking portion pattern ".Difference lies in enclosed area 92, do not opened between adjustment portion 4
Mouth 1, but closed by substrate 3.Certainly, since 3 thickness of substrate is less than 4 thickness of adjustment portion, therefore adjustment portion 4 also may be regarded as being set to lining
The pattern of protrusion on bottom 3.
It is further preferred that the thickness of adjustment portion 4 is equal to the thickness of blocking portion 2.
Can be that the thickness of adjustment portion 4 is equal to the thickness of blocking portion 2, i.e., the two is all right from the point of view of convenient for preparation
Answer the region that bottom plate is not etched.
Preferably, substrate 3 has opposite first surface and second surface；The first surface of substrate 3 in center sub-district 922
It is mutually parallel with second surface；First table of the first surface of substrate 3 with respect to substrate 3 in center sub-district 922 in transition sub-district 921
Face is obliquely installed, and the second surface of substrate 3 is tilted with respect to the first surface of substrate 3 in center sub-district 922 and set in transition sub-district 921
It sets.
As shown in figure 5, the both side surface of the substrate 3 in center sub-district 922 can be mutually parallel to ensure its thickness phase everywhere
Deng, and in transition sub-district 921 both side surface of substrate 3 then all with the 3 uneven surface row of substrate in center sub-district 922, therefore mistake
The gradual change for crossing 3 thickness of substrate in sub-district 921 can be realized jointly by the inclination of both side surface.
Of course it is to be understood that if it is as shown in figs. 4 and 6, a side surface and center for substrate 3 in transition sub-district 921
3 surface of substrate in sub-district 922 is parallel, and the other side is not parallel to generate gradient thickness and feasible.
The present embodiment also provides a kind of preparation method of above-mentioned mask plate comprising：
S0, bottom plate in homogeneous thickness is provided；
Material at S1, removal bottom plate corresponding opening 1, to form opening 1 and blocking portion 2；And transition is corresponded to bottom plate
Different location at sub-district 921 carries out being thinned for respective degrees, to form the substrate 3 in transition sub-district 921.
That is, mask plate can be carried out not by the different location to bottom plate in homogeneous thickness (such as sheet metal)
It is formed with processing.Wherein, opening 1 can be formed by punching bottom plate in portion, self-assembling formation blocking portion between opening 1
2；And by being thinned to the progress of bottom plate different location is different degrees of, then it can form the above transition sub-district 921.
Specifically, above each structure can be formed by photoetching process, you can correspond to blocking portion 2 in bottom plate and (may also include tune
Section portion 4) region formed photoetching compound protective layer after the exposure position of bottom plate is performed etching so that exposure position formed opening 1,
Substrate 3 etc..
Preferably, it is above to bottom plate correspond to the different location at transition sub-district 921 carry out the thinned of respective degrees include：With
Etching agent processing base plate corresponds at transition sub-district 921 to be thinned, wherein the etching agent for handling each position has and the position
The corresponding concentration of degree and/or flow velocity is thinned.
That is, the concentration of the etching agent (such as etching liquid) of the controllable different location for flowing through transition sub-district 921 and/or
Flow velocity keeps the etching speed of the different location of transition sub-district 921 different, to make different location generation is different degrees of to be thinned,
To form the substrate 3 of gradient thickness.
Specifically, can be realized in a number of different ways to the control for etching agent concentration, flow velocity, for example, can be arranged multiple
Nozzle sprays etching agent to the different location of transition sub-district 921 respectively, and concentration, the speed of the etching agent of different nozzle sprinkling
Etc. differences.
Of course it is to be understood that centering center area 922, can (can center sub-district 922 be used photoetching without etching
Glue is protected), it can also etch partially and (use the etching agent of same concentration and flow velocity i.e. in center sub-district 922, but cannot be by center sub-district
922 cut through).
It is furthermore preferred that the both side surface of substrate 3 in above-mentioned transition sub-district 921 then all with the substrate 3 in center sub-district 922
The mask plate of uneven surface row respectively can perform etching bottom plate both sides with etching agent, bottom plate made to correspond at transition sub-district 921
The different location of two sides occur respectively it is different degrees of be thinned, to be respectively formed the first face and the second face of wherein substrate 3.
Of course it is to be understood that the step of each structure formed above has no inevitable tandem relationship, their sequence can
It exchanges, can also synchronize progress.For example, can later make first bottom plate corresponds to blocking portion 2, the position of adjustment portion 4 all forms photoresist
Pattern area 91, transition sub-district 921, center sub-district 922 are performed etching respectively with different etching agents, in pattern area 91
Opening 1 is formed, the substrate 3 of gradient thickness is formed in transition sub-district 921, forms lining in homogeneous thickness in center sub-district 922
Bottom 3 and adjustment portion 4.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of mask plate, including adjacent pattern area and enclosed area, opening and the resistance of period profile are equipped in the pattern area
Stopper has substrate in the enclosed area, which is characterized in that
The enclosed area is transition sub-district, sub-district centered on remaining close to the marginal portion in pattern area；From adjacent with pattern area
Boundary direction center sub-district direction on, the thickness of substrate gradually increases in transition sub-district；Substrate everywhere in the sub-district of center
Thickness is identical.
2. mask plate according to claim 1, which is characterized in that
The thickness of substrate is less than the thickness of blocking portion in the transition sub-district；
The thickness of substrate is equal to the thickness of blocking portion in the center sub-district.
3. mask plate according to claim 1, which is characterized in that
The thickness of the substrate is less than the thickness of blocking portion.
4. mask plate according to claim 3, which is characterized in that
The adjustment portion of period profile is additionally provided in the enclosed area；Wherein, the week of the periodic pattern and blocking portion of the adjustment portion
Phase pattern is identical, and the substrate is between adjustment portion.
5. mask plate according to claim 4, which is characterized in that
The thickness of the adjustment portion is equal to the thickness of blocking portion.
6. mask plate according to claim 1, which is characterized in that the substrate has opposite first surface and the second table
Face；
The first surface of substrate is mutually parallel with second surface in the center sub-district；
The first surface of substrate is obliquely installed with respect to the first surface of substrate in the sub-district of center in the transition sub-district, the transition
The second surface of substrate is obliquely installed with respect to the first surface of substrate in the sub-district of center in sub-district.
7. mask plate according to claim 1, which is characterized in that
The mask plate is fine metal mask version.
8. a kind of preparation method of mask plate, which is characterized in that the mask plate is described in any one of claim 1 to 7
Mask plate；The method includes：
Bottom plate in homogeneous thickness is provided；
The material at the bottom plate corresponding opening is removed, to form opening and blocking portion；And transition is corresponded to the bottom plate
Different location at area carries out being thinned for respective degrees, to form the substrate in transition sub-district.
9. the preparation method of mask plate according to claim 8, which is characterized in that described to correspond to transition to the bottom plate
Different location at area carries out the thinned of respective degrees：
It is corresponded at transition sub-district with etching agent processing base plate to be thinned, wherein the etching agent for handling each position has and this
The corresponding concentration of degree and/or flow velocity is thinned in position.
10. the preparation method of mask plate according to claim 9, which is characterized in that the mask plate is claim 6 institute
The mask plate stated, described corresponded at transition sub-district with etching agent processing base plate include be thinned：
The two sides at transition sub-district are corresponded to etching agent processing base plate respectively, to be respectively formed the first face and second of substrate
Face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810174125.4A CN108411248B (en) | 2018-03-02 | 2018-03-02 | Mask and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810174125.4A CN108411248B (en) | 2018-03-02 | 2018-03-02 | Mask and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108411248A true CN108411248A (en) | 2018-08-17 |
| CN108411248B CN108411248B (en) | 2020-04-03 |
Family
ID=63129441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810174125.4A Active CN108411248B (en) | 2018-03-02 | 2018-03-02 | Mask and preparation method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN108411248B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115667572B (en) * | 2021-01-22 | 2024-05-17 | 京东方科技集团股份有限公司 | Occlusion mask plate, mask plate assembly and evaporation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005232474A (en) * | 2004-02-17 | 2005-09-02 | Dainippon Screen Mfg Co Ltd | Mask for vapor deposition |
| KR20120069396A (en) * | 2010-12-20 | 2012-06-28 | 삼성모바일디스플레이주식회사 | Mask frame assembly for deposition, manufacturing method of the same, and manufacturing method of organic light emitting display device thereused |
| CN105132861A (en) * | 2015-10-13 | 2015-12-09 | 京东方科技集团股份有限公司 | Evaporation mask plate and evaporation device |
| CN106191768A (en) * | 2014-11-21 | 2016-12-07 | 三星显示有限公司 | Mask frame and manufacture method thereof |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
-
2018
- 2018-03-02 CN CN201810174125.4A patent/CN108411248B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005232474A (en) * | 2004-02-17 | 2005-09-02 | Dainippon Screen Mfg Co Ltd | Mask for vapor deposition |
| KR20120069396A (en) * | 2010-12-20 | 2012-06-28 | 삼성모바일디스플레이주식회사 | Mask frame assembly for deposition, manufacturing method of the same, and manufacturing method of organic light emitting display device thereused |
| CN106191768A (en) * | 2014-11-21 | 2016-12-07 | 三星显示有限公司 | Mask frame and manufacture method thereof |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
| CN105132861A (en) * | 2015-10-13 | 2015-12-09 | 京东方科技集团股份有限公司 | Evaporation mask plate and evaporation device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115667572B (en) * | 2021-01-22 | 2024-05-17 | 京东方科技集团股份有限公司 | Occlusion mask plate, mask plate assembly and evaporation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108411248B (en) | 2020-04-03 |
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