CN108401151B - Online acquisition method for single event effect test image of complementary metal oxide semiconductor image sensor - Google Patents
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Abstract
The invention relates to a method for collecting single event effect test images of a complementary metal oxide semiconductor image sensor on line, wherein an image switching device for remote transmission comprises a test board and a first image switching deviceThe system comprises a Camerlink data line, a coaxial sending box, a coaxial can penetrating cable, a coaxial receiving box, a second Camerlink data line, an optical fiber sending end, an optical fiber cable, an optical fiber receiving end and an image acquisition computer, wherein the frequency and the image mode of image acquisition software are set to meet the requirements of a complementary metal oxide semiconductor image sensor, the imaging gain, the integration time and the frame rate of the image sensor are set, then the image is acquired and stored, a single-particle irradiation beam is started, the image is continuously acquired and stored, and when the single-particle irradiation beam reaches 1 × 107ion·cm‑2And then, closing the single-particle irradiation beam, and stopping collecting and storing the image. And accurately judging the single event effect generated by the complementary metal oxide semiconductor image sensor according to the image data. The method has the advantages of high reliability, high data transmission speed, convenient operation, simplicity and feasibility.
Description
Technical Field
The invention relates to an on-line acquisition method for a single event effect test image of a complementary metal oxide semiconductor image sensor, belonging to the technical field of performance parameter detection of photoelectric imaging devices.
Background
In the past, the Camera link data line is generally used for transmitting the image data of the complementary metal oxide semiconductor image sensor, but the Camera link data line has a complex interface, so that the processing difficulty of the interface is high during switching, and the reliability is low; the data transmission speed is low when the Camerlink data line carries out long-distance transmission; when the Camerlink data line passes through a black box or a closed space, the image transmission quality is greatly reduced, and the on-line acquisition requirement of the single event effect test image cannot be met. Therefore, the Camerlink data line cannot finish the on-line image acquisition of the single event effect test, and the invention of the on-line image acquisition method and the device which are suitable for long-distance rapid transmission and meet the single event effect test requirement on the image transmission quality when penetrating through a black box or a closed space is urgently needed.
The method mainly completes the transmission of the image data of the complementary metal oxide semiconductor image sensor sent by the Camerlink data line to a remote control computer with the distance of 30 meters, and ensures that the image transmission quality of the Camerlink data line still meets the on-line acquisition requirement of the single event effect test image after the Camerlink data line passes through a black box or a closed space. The invention has the advantages of high reliability, high data transmission speed, simple device connection, convenient operation and simple and easy method.
Disclosure of Invention
The invention aims to provide an on-line acquisition method of a single event effect test image of a complementary metal oxide semiconductor image sensor on the premise of ensuring that the image transmission quality meets the on-line acquisition of the single event effect test image when a tank is penetrated or passes through a closed space, and relates to a remote transmission device which comprises a test board, a first Camerlink data wire, a coaxial transmitting box, a coaxial tank penetrating cable, a coaxial receiving box, a second Camerlink data wire, an optical fiber transmitting end, an optical fiber cable, an optical fiber receiving end and an image acquisition computer, wherein the method meets the requirements of the complementary metal oxide semiconductor image sensor by setting the frequency and the image mode of image acquisition software, then setting the imaging gain, the integration time and the frame rate of the image sensor, then starting to acquire and store the image, starting a single event irradiation beam, continuing to acquire and store the image, and when the single event irradiation beam reaches 1 × 107ion·cm-2And then, closing the single-particle irradiation beam, and stopping collecting and storing the image. According to the method, camera image data sent by a Camera link data line is transmitted to a remote control computer with the length of 30 meters, and the single event effect generated by an image sensor is accurately judged according to the image data. The method has the advantages of high reliability, high data transmission speed, guaranteed image quality output after penetrating through the tank or the sealed space, simple device connection, convenient operation and simple and feasible method.
The invention relates to a method for acquiring single event effect test images of a complementary metal oxide semiconductor image sensor on line, wherein a related image switching device for remote transmission consists of a test board, a first Camerlink data line, a coaxial transmitting box, a coaxial tank-penetrating cable, a coaxial receiving box, a second Camerlink data line, an optical fiber transmitting end, an optical fiber cable, an optical fiber receiving end and an image acquisition computer, wherein an image output interface on the test board (1) is connected with an image input interface on the coaxial transmitting box (3) through a first Camerlink data line (2), the coaxial transmitting box (3) converts received image data into high-speed serial data and leads the high-speed serial data out of a tank through 6 coaxial tank-penetrating cables (4), the 6 coaxial tank-penetrating cables (4) are connected with a coaxial receiving box (5), and A, B, C and C are respectively arranged on the coaxial tank-penetrating cables (4), the coaxial transmitting box (3) and the coaxial receiving box (5), B. C, D, E, F, the same marks are connected with each other, the coaxial receiving box (5) converts the high-speed serial data into image data (6) of a second Camerlink data line for sending, the second Camerlink data line (6) is respectively connected with the coaxial receiving box (5) and the optical fiber sending end (7), the optical fiber sending end (7) converts the image data into optical fiber signals, the optical fiber cable (8) is respectively connected with the optical fiber sending end (7) and the optical fiber receiving end (9), the optical fiber cable (8) is provided with PN marks which are correspondingly connected with the PN marks on the optical fiber sending end (7) and the optical fiber receiving end (9), the optical fiber receiving end converts the optical fiber signals into image data signals and sends the image data signals to an image acquisition computer (10) provided with an image acquisition card, the specific operation is carried out according to the following steps:
a. mounting a complementary metal oxide semiconductor image sensor on a test board (1), and locking a device pin by adopting a special locking device;
b. connecting a power line of a test board (1) to a power output port, setting voltage and a current limiting value, and starting a power supply;
c. starting an image acquisition computer (10) and opening image acquisition software;
d. loading a configuration file for image acquisition software to enable the frequency and the image mode of the image acquisition software to meet the requirements of an image sensor;
e. setting the imaging gain, the integration time and the frame rate of an image sensor;
f. starting to collect and store images;
g. keeping the working condition of the image sensor unchanged, starting the single-particle irradiation beam, and continuously acquiring and storing the image;
h. the single particle irradiation beam current reaches 1 × 107ion·cm-2Then, closing the single particle irradiation beam;
i. stopping collecting and storing the image, turning off the power supply, and taking down the complementary metal oxide semiconductor image sensor.
The invention relates to a method for acquiring a single event effect test image of a complementary metal oxide semiconductor image sensor on line, wherein power lines led out from a coaxial sending box (3) and a coaxial receiving box (5) are connected with a desktop power supply, the power supply voltage is 5V +/-0.5V, and the power supply current is at least 800 mA;
the setting of an image acquisition card on the image acquisition computer (10) is decided by a user, the setting parameters cannot exceed the base mode of the Camerlink standard, and the used image acquisition card meets the condition that the highest pixel clock reaches 85MHz under the base mode.
According to the method for acquiring the single event effect test image of the complementary metal oxide semiconductor image sensor on line, disclosed by the invention, the image data of the complementary metal oxide semiconductor image sensor, which is sent by the Camera link data line, can be transmitted to a remote control computer with the distance of 30 meters, and the image transmission quality of the Camera link data line after penetrating through a black box or a closed space is ensured to still meet the requirement for acquiring the single event effect test image on line. The invention has the advantages of high reliability, high data transmission speed, simple device connection, convenient operation and simple and easy method.
The invention relates to a single event effect test image on-line acquisition method of a complementary metal oxide semiconductor image sensor, which is not limited to the complementary metal oxide semiconductor image sensor and can also be used for carrying out single event effect test image on-line acquisition aiming at a charge coupled device image sensor. Therefore, the invention is suitable for device development units, scientific research institutions and aerospace load units which need to pass through a closed space or a vacuum tank for image acquisition and need to master the irradiation performance of the complementary metal oxide semiconductor or charge coupled device image sensor in real time.
Drawings
FIG. 1 is a schematic diagram of a remote transmission device according to the present invention;
FIG. 2 is an on-line image collection diagram of a single event effect test of a CMOS image sensor according to the present invention.
Detailed Description
Examples
The invention relates to a method for acquiring a single event effect test image of a complementary metal oxide semiconductor image sensor on line, which relates to a remote transmission device and consists of a test board, a first Camerlink data wire, a coaxial transmitting box, a coaxial tank-penetrating cable, a coaxial receiving box, a second Camerlink data wire, an optical fiber transmitting end, an optical fiber cable, an optical fiber receiving end and an image acquisition computer, wherein an image output interface on the test board 1 is connected with an image input interface on the coaxial transmitting box 3 through a first Camerlink data wire 2, the first Camerlink data wire 2 and the coaxial transmitting box 3 are also placed in a vacuum tank during a single event effect test, the coaxial transmitting box 3 is used for converting received image data into high-speed serial data and leading out of the tank through 6 coaxial tank-penetrating cables 4, the 6 coaxial tank-penetrating cables 4 are connected with a coaxial receiving box 5, A and A are respectively arranged on the coaxial transmitting box 3 and the coaxial receiving box 5, B. C, D, E, F, the same marks are connected with each other correspondingly, the coaxial receiving box 5 is used for converting high-speed serial data into image data 6 of a second Camerlink data line for sending, the second Camerlink data line 6 is respectively connected with the coaxial receiving box 5 and an optical fiber sending end 7, the optical fiber sending end 7 is used for converting the image data into optical fiber signals, an optical fiber cable 8 is respectively connected with the optical fiber sending end 7 and an optical fiber receiving end 9, the optical fiber cable 8 is provided with PN marks which are correspondingly connected with the PN marks on the optical fiber sending end 7 and the optical fiber receiving end 9, the optical fiber receiving end 9 converts the optical fiber signals into image data signals to be sent to an image collecting computer 10 provided with an image collecting card, the coaxial receiving box 5, the second Camerlink data line 6, the optical fiber sending end 7, the optical fiber cable 8, the optical fiber receiving end 9 and the image collecting computer 10 are all placed in an irradiation chamber during a, the image acquisition computer 10 is connected with a remote control computer in a test control room through a 30m network cable, and the image acquisition computer 10 is operated by adopting the remote control computer in the test control room, so that the working state of the test board 1 can be controlled, the power supply can be controlled to be powered on and powered off, images can be acquired and stored, the current can be acquired and other parameters can be controlled;
after the connection of each part of the remote transmission device is completed, two AC-DC power adapters are connected with an optical fiber sending end 7 and an optical fiber receiving end 9, power is directly supplied, a green light is turned on to indicate that equipment works, power lines led out from a coaxial sending box 3 and a coaxial receiving box 5 are connected with a desktop power supply, the power supply voltage is 5V, the power supply current is 1A, and the specific operation is carried out according to the following steps:
a. before carrying out a single event effect test, firstly, mounting a complementary metal oxide semiconductor image sensor (with the model of GSENSE400) on a test board 1, locking a device pin by adopting a special locking device, and then placing the test board 1 in a vacuum tank;
b. connecting a power line of a test board 1 to a power output port, setting voltage values to be 5V and-5V for output, setting current limiting values to be 1A, and starting a power supply;
c. starting the image acquisition computer 10 and opening image acquisition software;
d. loading a configuration file for image acquisition software, setting the frequency to be 85MHz, and setting the image mode to be 2048 × 2040, so that the requirements of an image sensor are met;
e. setting the imaging gain of a complementary metal oxide semiconductor image sensor to be 1, the integration time to be 1000 and the frame rate to acquire 3 frames of images per second;
f. starting to collect and store images;
g. si ions (L ET 9.01 MeV-cm) are selected to maintain the working condition of the CMOS image sensor2Mg) to obtain single event latch-up resistance, wherein the range of the selected heavy ion in the sensitive region of the device is ensured to be more than 30 μm, and the fluence rate is 1 × 103ion·cm-2·s-1When the particles vertically enter, after all the devices are electrified, the power supply of the tested complementary metal oxide semiconductor image sensor is turned on, the image is output, the image is collected and stored, and fig. 2 is an online collection diagram of a single particle effect test image of the complementary metal oxide semiconductor image sensor;
h. the single particle irradiation beam current reaches 1 × 107ion·cm-2Then, closing the single particle irradiation beam;
i. stopping collecting and storing the image, turning off the power supply, and taking down the complementary metal oxide semiconductor image sensor.
In the embodiment, the image (figure 2) collected after penetrating through the vacuum tank has high image transmission quality, and the resolution meets the requirement of judging a single event effect test. The invention has the advantages of high reliability, high data transmission speed, simple device connection, convenient operation and simple and easy method.
The method not only can transmit the image data of the complementary metal oxide semiconductor image sensor sent by the Camera link data line to a remote control computer with the distance of 30 meters, but also can ensure that the image transmission quality of the Camera link data line still meets the requirement of single event effect test image on-line acquisition after the Camera link data line passes through a black box or a closed space, and can accurately judge the single event effect generated by the complementary metal oxide semiconductor image sensor according to the image data.
The above-mentioned embodiments are merely preferred examples of the present invention, and do not limit the scope of the present invention.
Claims (1)
1. The method is characterized in that a remote transmission image switching device involved in the method consists of a test board, a first Camerlink data line, a coaxial sending box, a coaxial tank-penetrating cable, a coaxial receiving box, a second Camerlink data line, an optical fiber sending end, an optical fiber cable, an optical fiber receiving end and an image acquisition computer, wherein the test board (1) is placed in a vacuum tank, an image output interface on the test board (1) is connected with an image input interface on the coaxial sending box (3) through the first Camerlink data line (2), the coaxial sending box (3) converts received image data into high-speed serial data and leads out of the tank through 6 coaxial tank-penetrating cables (4), the coaxial tank-penetrating cables (4) are connected with a coaxial receiving box (5), and A are respectively arranged on the coaxial sending box (3) and the coaxial receiving box (5), B. C, D, E, F, the same marks are connected with each other, the coaxial receiving box (5) converts the high-speed serial data into the image data of the second Camerlink data line (6) for sending, the second Camerlink data line (6) is respectively connected with the coaxial receiving box (5) and the optical fiber sending end (7), the optical fiber sending end (7) converts the image data into optical fiber signals, the optical fiber cable (8) is respectively connected with the optical fiber sending end (7) and the optical fiber receiving end (9), the optical fiber cable (8) is provided with PN marks which are correspondingly connected with the PN marks on the optical fiber sending end (7) and the optical fiber receiving end (9), the optical fiber receiving end converts the optical fiber signals into image data signals and sends the image data signals to the image acquisition computer (10) provided with the image acquisition card, the specific operation is carried out according to the following steps:
a. mounting a complementary metal oxide semiconductor image sensor on a test board (1), locking a device pin by adopting a special locking device, and then placing the test board (1) in a vacuum tank;
b. connecting power lines of the test board (1), the coaxial sending box (3) and the coaxial receiving box (5) to a power output port, setting voltage and current limiting values, and starting a power supply;
c. starting an image acquisition computer (10) and opening image acquisition software;
d. loading a configuration file for image acquisition software to enable the frequency and the image mode of the image acquisition software to meet the requirements of an image sensor;
e. setting the imaging gain, the integration time and the frame rate of an image sensor;
f. starting to collect and store images;
g. keeping the working condition of the image sensor unchanged, starting the single-particle irradiation beam, and continuously acquiring and storing the image;
h. the single particle irradiation beam current reaches 1 × 107ion·cm-2Then, closing the single particle irradiation beam;
i. stopping collecting and storing the image, turning off the power supply, and taking down the complementary metal oxide semiconductor image sensor.
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