CN108400200A - A kind of black silicon process for etching recycling electrolyte solution - Google Patents
A kind of black silicon process for etching recycling electrolyte solution Download PDFInfo
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- CN108400200A CN108400200A CN201810148461.1A CN201810148461A CN108400200A CN 108400200 A CN108400200 A CN 108400200A CN 201810148461 A CN201810148461 A CN 201810148461A CN 108400200 A CN108400200 A CN 108400200A
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- etching
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- electrolyte solution
- electrolytic cell
- silicon chip
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000008569 process Effects 0.000 title claims abstract description 35
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 21
- 239000008151 electrolyte solution Substances 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 19
- 238000004064 recycling Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 239000003792 electrolyte Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000013528 metallic particle Substances 0.000 claims abstract description 26
- 239000002923 metal particle Substances 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 23
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 19
- 210000002268 wool Anatomy 0.000 claims abstract description 17
- 235000008216 herbs Nutrition 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 239000010946 fine silver Substances 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000011084 recovery Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 20
- 230000006872 improvement Effects 0.000 description 9
- 229910021645 metal ion Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003911 water pollution Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
The invention discloses a kind of black silicon process for etching recycling electrolyte solution, including carrying out metal particles deposition step and metallic particles ionization step successively on the surface of silicon chip using electrolysis before and after making herbs into wool, the metal particles deposition step and metallic particles ionization step are completed in the same electrolytic cell device；Wherein, the electrolytic cell device includes the cathode or anode of DC power supply, electrolyte and the metal bar being connect respectively with the positive and negative anodes of DC power supply and silicon chip composition.The present invention is during silicon wafer wool making, two steps are ionized by the metal particles deposition and metallic particles of completing silicon chip surface in the same electrolytic cell, so that the silver ion that electrolysis goes out is in always in electrolyte always and recycles state, without recovery processing, while reducing production cost and avoiding the pollution to water.
Description
Technical field
The invention belongs to photovoltaic preparation fields, and in particular to a kind of black silicon process for etching recycling electrolyte solution.
Background technology
During wet method black silicon process for etching, core procedure include metal particles deposition, borehole making herbs into wool, metallic particles from
Sonization.Metal particle deposit process be by silicon chip place in the electrolytic solution, technology ion from the valence band edge of silicon obtain electronics from
And by Si reduction at metal simple-substance, in silicon chip surface depositing metal particles.Making herbs into wool process is by the silicon chip of depositing metal particles
It is placed in the mixed solution of hydrofluoric acid and hydrogen peroxide and is reacted, metallic particles has catalytic action during making herbs into wool, in gold
The downward borehole making herbs into wool of fast reaction below metal particles, forms black silicon matte.Demetalization process is to be placed on the silicon chip after making herbs into wool
In concentrated nitric acid solution, metallic particles is changed into metal ion form, is released from the matte hole of silicon chip surface, avoids gold
Belong to residual to have an impact battery piece performance.Metal ion in demetalization solution is to avoid water pollution, is needed into row metal
Recovery processing, and the metal recycled can not be directly used in black silicon making herbs into wool again.Therefore the present invention provides one kind recycling electrolysis
The black silicon process for etching of liquor.
Invention content
In view of the above-mentioned problems, the present invention proposes a kind of black silicon process for etching recycling electrolyte solution.
It realizes above-mentioned technical purpose, reaches above-mentioned technique effect, the invention is realized by the following technical scheme：
A kind of black silicon process for etching recycling electrolyte solution, it is characterised in that：Including using electrolysis before and after making herbs into wool
Method carries out metal particles deposition step and metallic particles ionization step, the metal particles deposition successively on the surface of silicon chip
Step and metallic particles ionization step are completed in the same electrolytic cell device；
Wherein, the electrolytic cell device includes DC power supply, electrolyte and is connect respectively with the positive and negative anodes of DC power supply
Metal bar and silicon chip composition cathode or anode.
As a further improvement on the present invention, the silicon chip including described in several is connected to by the silicon plate being connected with conducting wire
In electrolytic cell device, in the electrolytic solution, the silicon chip is vertically connected with silicon plate and passes through outer for the setting of the silicon plate level
The porous fixing groove in side is fixed.
As a further improvement on the present invention, in the metal particles deposition step, the metal bar and power supply
Cathode is connected, and in the metallic particles ionization step, the metal bar is connected with positive pole；The electrolyte
Constituent matched with the metal bar.
As a kind of embodiment of the present invention, the metal bar in the electrolytic cell device is fine silver stick；
The electrolyte includes following component：The silver nitrate of 100~300mg/L, the nitric acid of 1-6g/L；
In electrolytic process, the pH value of the electrolyte is controlled 4.5~6.5.
As a further improvement on the present invention, in deposition of silver step, the direct current power source voltage provided is 2~5V, electrolysis
Time be 1~5min；In silver-ionized step, the direct current power source voltage that is provided is 2~5V, time of electrolysis is 1~
5min。
As another embodiment of the present invention, the metal bar in the electrolytic cell device is fine copper stick；
The electrolyte includes following component：The copper sulphate of 200~600mg/L, the sulfuric acid of 1-8g/L；
In electrolytic process, the pH value of the electrolyte is controlled 3~5.
As a further improvement on the present invention, in copper deposition step, the direct current power source voltage provided is 1.5~5V, electricity
The time of solution is 1~5min；In copper ion step, the direct current power source voltage provided is 1.5~5V, and the time of electrolysis is 1
~5min.
As a further improvement on the present invention, further include placing the PH detectors for being used to monitor pH value in the electrolytic solution.
As a further improvement on the present invention, the electrolytic cell further includes that nitrogen arranged at the bottom is bubbled mechanism.
As a further improvement on the present invention, the making herbs into wool is that the silicon chip for having deposited metallic particles is placed on hydrofluoric acid
In the mixed solution of hydrogen peroxide, the silicon chip for completing making herbs into wool is subjected to metallic particles ionization step later.
Beneficial effects of the present invention：The present invention is during silicon wafer wool making, by completing silicon chip in the same electrolytic cell
The metal particles deposition and metallic particles on surface ionize two steps, and the metal ion that electrolysis goes out is made to be in always in electrolyte
State is recycled, without recovery processing, while production cost is reduced and avoiding the pollution to water.
Description of the drawings
Fig. 1 is the metal particles deposition step electrolytic cell device structural schematic diagram of the first embodiment of the invention；
Fig. 2 is the metallic particles ionization step electrolytic cell device structural schematic diagram of the first embodiment of the invention；
Fig. 3 is the metal particles deposition step electrolytic cell device structural schematic diagram of second of embodiment of the invention；
Fig. 4 is that the metallic particles of second of embodiment of the present invention ionizes electrolytic cell device structural schematic diagram；
1- power supplys, 2- conducting wires, 3- metal bars, 4- silicon chips, 5- electrolyte, 6-PH detectors, 7- fixing grooves, 8- silicon plates, 9-
Nitrogen is bubbled mechanism.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The application principle of the present invention is explained in detail below in conjunction with the accompanying drawings.
A kind of heretofore described black silicon process for etching recycling electrolyte solution, the making herbs into wool are that will deposit
The silicon chip of complete metallic particles is placed in the mixed solution of hydrofluoric acid and hydrogen peroxide, will complete the silicon chip of making herbs into wool later into row metal
Bead ion step, i.e. making herbs into wool are front and back to carry out metal particles deposition step and gold successively using electrolysis on the surface of silicon chip 4
Metal particles ionization step, the metal particles deposition step and metallic particles ionization step are filled in the same electrolytic cell
Set middle completion.
The electrolytic cell device includes DC power supply 1, electrolyte 5, and by conducting wire 2 respectively with DC power supply 1
The connected silicon chip 4 of positive and negative anodes and the very high metal bar 3 of purity.In electrolytic process, in order to prevent since the ion of surrounding them is dense
Influence of the inhomogeneities of degree to electrode potential, the electrolytic cell device further include that nitrogen arranged at the bottom is bubbled mechanism,
Its bubbling rate is 2-8L/min.
In the deposition of silver step, the silicon chip 4 and metal bar 3 are connected with the anode and cathode of power supply 1 point respectively
Not Zuo Wei anode and cathode, in electrolytic process, for metal electrode as anode, metal simple-substance, which loses electronics, becomes metal ion；Silicon
Piece 4 is used as cathode, surrounding metal ion to obtain electronics, become metal simple-substance and be attached to 4 surface of silicon chip, in silicon chip 4
Surface depositing metal particles.
Metal bar 3：M-ne-→Mn+；
Silicon chip 4：Mn++ne-→M。
In the metallic particles ionization step, the silicon chip 4 and metal bar 3 are positive and negative with power supply 1 respectively
Extremely it is connected respectively as cathode and anode, in electrolytic process, silicon chip 4 is used as anode, the metallic particles in matte hole to lose electricity
Son becomes metal ion and is dissolved in solution, to be detached from silicon chip 4, the purpose reached.During being somebody's turn to do, the silicon chip 4 and metal
Ionic reaction on stick 3 is as follows：
Metal bar 3：Mn++ne-→M；
Silicon chip 4：M-ne-→Mn+。
Since the metal particles deposition step and metallic particles ionization step of the invention are in the same electrolytic cell device
In, therefore in the process, electrolyte and metal bar are in recycle state always, without recovery processing, while reducing production
Cost and avoid the pollution to water.
In order to realize recycling for electrolyte, ensure that the metal ion in electrolyte is in a dynamic equilibrium-like
State, the selection of the ingredient of selected composition electrolyte, it should it is corresponding with selected metal bar, to avoid in electrolyte
Introduce unnecessary impurity.Meanwhile the parameter selection in electrolytic process can be set according to selected metal bar and electrolyte.
It is specifically described by taking silver and copper as an example below.
Embodiment one：
In electrolytic cell device, use fine silver stick for metal bar, the ingredient in corresponding electrolyte is 100~300mg/L's
Silver nitrate, the nitric acid of 1-6g/L, be typically due to metal ion be easy and OHIn conjunction with precipitating, therefore needed in electrolytic process
The pH value of electrolyte 5 is strictly controlled, the pH value is controlled 4.5~6.5.In electrolytic process, in deposition of silver step, institute
The direct current power source voltage of offer is 2~5V, and the time of electrolysis is 1~5min；In silver-ionized step, the DC power supply that is provided
Voltage is 2~5V, and the time of electrolysis is 1~5min.
Embodiment two：
In electrolytic cell device, use fine copper stick for metal bar, the ingredient in corresponding electrolyte 5 is 200~600mg/L's
Copper sulphate, the sulfuric acid of 1-8g/L.In electrolytic process, the pH value of the electrolyte 5 is controlled 3~5.In electrolytic process, in copper
In deposition step, the direct current power source voltage provided is 1.5~5V, and the time of electrolysis is 1~5min；In copper ion step,
The direct current power source voltage provided is 1.5~5V, and the time of electrolysis is 1~5min.
In above embodiment, by placing PH detectors 6 in electrolyte 5 for monitoring pH value, implementation of the invention
Using Hash HQ40D type PH detectors in example.
The device of the invention is other than one silicon chip of connection as depicted in figs. 1 and 2, it may also be used for is completed at the same time to more
The metal particles deposition and metallic particles of a silicon chip ionize, device as shown in Figure 3 or Figure 4, including the silicon described in several
Piece 4 is connected to by the silicon plate 8 being connected with conducting wire 2 in electrolytic cell device, the horizontal setting of the silicon plate 8 in electrolyte 5,
The silicon chip 4 is vertically connected with silicon plate 8 and is fixed by the porous fixing groove in outside 7, the fixing groove 7 using
Nonconducting high molecular hard plastics are made, such as acrylic, teflon material.The device can be simultaneously to two or more silicon chips
4 carry out metal particles deposition and metallic particles ionization operation, can greatly improve working efficiency, for the preferred side of the present invention
Case.Since one end of power supply 1 is connected to multiple silicon chips 4, need to increase power supply compared to the device shown by Fig. 1 and Fig. 2
The concentration of voltage and electrolyte, to improve the speed of electrolysis.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (10)
1. a kind of black silicon process for etching recycling electrolyte solution, it is characterised in that：Including using electrolysis before and after making herbs into wool
Metal particles deposition step and metallic particles ionization step, the metal particles deposition are carried out successively on the surface of silicon chip
Step and metallic particles ionization step are completed in the same electrolytic cell device；
Wherein, the electrolytic cell device includes DC power supply, electrolyte and the gold being connect respectively with the positive and negative anodes of DC power supply
Belong to the cathode or anode of stick and silicon chip composition.
2. a kind of black silicon process for etching recycling electrolyte solution according to claim 1, it is characterised in that：Including
Silicon chip described in several is connected to by the silicon plate being connected with conducting wire in electrolytic cell device, and the setting of the silicon plate level exists
In electrolyte, the silicon chip is vertically connected with silicon plate and is fixed by the porous fixing groove in outside.
3. a kind of black silicon process for etching recycling electrolyte solution according to claim 1, it is characterised in that：Institute
In the metal particles deposition step stated, the metal bar is connected with power cathode, in the metallic particles ionization step
In, the metal bar is connected with positive pole；The constituent of the electrolyte is matched with the metal bar.
4. a kind of black silicon process for etching recycling electrolyte solution according to claim 3, which is characterized in that described
Electrolytic cell device in metal bar be fine silver stick；
The electrolyte includes following component：The silver nitrate of 100~300mg/L, the nitric acid of 1-6g/L；
In electrolytic process, the pH value of the electrolyte is controlled 4.5~6.5.
5. a kind of black silicon process for etching recycling electrolyte solution according to claim 4, it is characterised in that：Silver is heavy
In product step, the direct current power source voltage provided is 2~5V, and the time of electrolysis is 1~5min；In silver-ionized step, carried
The direct current power source voltage of confession is 2~5V, and the time of electrolysis is 1~5min.
6. a kind of black silicon process for etching recycling electrolyte solution according to claim 3, it is characterised in that：It is described
Electrolytic cell device in metal bar be fine copper stick；
The electrolyte includes following component：The copper sulphate of 200~600mg/L, the sulfuric acid of 1-8g/L；
In electrolytic process, the pH value of the electrolyte is controlled 3~5.
7. a kind of black silicon process for etching recycling electrolyte solution according to claim 6, it is characterised in that：Copper is heavy
In product step, the direct current power source voltage provided is 1.5~5V, and the time of electrolysis is 1~5min；In copper ion step, institute
The direct current power source voltage of offer is 1.5~5V, and the time of electrolysis is 1~5min.
8. a kind of black silicon process for etching recycling electrolyte solution according to claim 4 or 6, it is characterised in that：
Further include placing the PH detectors for being used to monitor pH value in the electrolytic solution.
9. a kind of black silicon process for etching recycling electrolyte solution according to claim 1, it is characterised in that：It is described
Electrolytic cell further include that nitrogen arranged at the bottom is bubbled mechanism.
10. a kind of black silicon process for etching recycling electrolyte solution according to claim 1, it is characterised in that：Institute
The making herbs into wool stated is to be placed on the silicon chip for having deposited metallic particles in the mixed solution of hydrofluoric acid and hydrogen peroxide, will complete to make later
The silicon chip of suede carries out metallic particles ionization step.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880449A (en) * | 2019-09-30 | 2020-03-13 | 王偲偲 | Silicon wafer cleaning method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254992A (en) * | 2011-07-04 | 2011-11-23 | 南昌航空大学 | Novel polycrystalline silicon etching process |
| CN105047767A (en) * | 2015-09-10 | 2015-11-11 | 浙江晶科能源有限公司 | Texturizing method of silicon wafer |
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2018
- 2018-02-13 CN CN201810148461.1A patent/CN108400200B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254992A (en) * | 2011-07-04 | 2011-11-23 | 南昌航空大学 | Novel polycrystalline silicon etching process |
| CN105047767A (en) * | 2015-09-10 | 2015-11-11 | 浙江晶科能源有限公司 | Texturizing method of silicon wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880449A (en) * | 2019-09-30 | 2020-03-13 | 王偲偲 | Silicon wafer cleaning method |
| CN110880449B (en) * | 2019-09-30 | 2022-07-19 | 王偲偲 | Silicon wafer cleaning method |
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