CN108400198A - The low-dimensional nano photodetectors and preparation method of asymmetric local fields regulation and control in face - Google Patents
The low-dimensional nano photodetectors and preparation method of asymmetric local fields regulation and control in face Download PDFInfo
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- 230000033228 biological regulation Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 147
- 239000011787 zinc oxide Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims abstract description 8
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 5
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 20
- 239000002156 adsorbate Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000002135 nanosheet Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 9
- 230000005669 field effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000004043 responsiveness Effects 0.000 description 9
- 238000011835 investigation Methods 0.000 description 8
- 230000002085 persistent effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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Abstract
The invention discloses the low-dimensional nano photodetectors and preparation method of asymmetric local fields regulation and control in a kind of face.Device architecture is followed successively by substrate, oxide skin(coating), Nano semiconductor, source-drain electrode and dielectric layer from bottom to top.Device preparation process is that ultra-thin zinc oxide (ZnO) nanometer sheet that will be grown with CVD method is transferred on the silicon substrate with oxide skin(coating), source, drain electrode are made using techniques such as electron beam exposure and thermal evaporations, then the techniques such as electron beam exposure and atomic layer deposition is recycled to make hafnium oxide (HfO2) dielectric layer, it is prepared into low-dimensional nano photodetectors.By introducing asymmetric HfO2, formed with gas molecules to the partial adsorbates of nanometer sheet, to regulate and control the concentration of Zinc oxide nano sheet both sides carrier, to asymmetric local fields in forming face, finally carry out the response speed of faster devices, and device also presents the detectivity of superelevation.It is an advantage of the invention that preparing simply, fast response time, dark current is low, detectivity height and small power consumption.
Description
Technical field
The present invention relates to a kind of low-dimensional nano photodetectors part, a kind of the low of asymmetric local fields regulation and control in face is referred specifically to
Tie up nano photodetectors and preparation method.
Background technology
Two-dimensional nanostructure material is all in nano-device and functional material etc. because of its unique light, electricity, magnetic and mechanical performance
It is multi-field to be increasingly becoming world community researcher's focus of attention.About the research of low-dimensional nano structure material, either
The controlledly synthesis of material, the preparation of device, or the research etc. with the low dimensional physics of size direct correlation, links are all also deposited
There is problem to be solved in many.Wherein zinc oxide (ZnO) is used as typical two-dimensional material, typical broad-band gap (3.7eV) half
Conductor material, they have more special opto-electronic conversion property, while also referred to as third generation optoelectronic semiconductor material；
ZnO nano piece is low with growth temperature, exciton energy composite energy is high, electronics induced defects are relatively low, threshold voltage is low, stability is high,
The advantages that raw material is cheap and easy to get, and its corresponding cutoff wavelength is about 370nm.Its high mobility (588.9cm2·V-1·s-1)
With high responsiveness (7.5 × 106A/W many technology necks such as high-speed electronic components, opto-electronic device and photodetector) be can be used as
Potentiality substituent (Applied Physics Letters, 110,043505 (2017) in domain；Nature
communications,5,(2014))。
However, based on the photodetector of ZnO because its abundant surface state and lattice defect will produce high intrinsic current-carrying
Sub- concentration, therefore there are Investigation on Persistent Photoconductivity Effect phenomenons, substantially reduce the response speed of device, to seriously affect the optical detection of device
Performance.Therefore, there is an urgent need to study a kind of unique device architecture to solve the problems, such as zinc oxide Investigation on Persistent Photoconductivity Effect, device is improved
Response speed to improve the signal-to-noise ratio and detectivity of device.
To solve the above-mentioned problems, the present invention proposes a kind of photoelectricity spy based on asymmetric local fields regulation and control in the faces ZnO
Survey device and preparation method.This method is one layer of very thin HfO of a half mulching in ZnO raceway grooves2, utilize the asymmetric titanium dioxide of introducing
Hafnium is formed with gas molecules to the partial adsorbates of nanometer sheet, to regulate and control the concentration of ZnO nano piece both sides carrier, to shape
At asymmetric local fields in face, the separation of light induced electron and hole pair is improved, solves the problems, such as ZnO Investigation on Persistent Photoconductivity Effect well,
The response time of ZnO photodetectors is greatly improved, there is higher commutating ratio, higher detectivity and responsiveness.
Invention content
The present invention provides the photodetectors and preparation method thereof based on asymmetric local fields regulation and control in the faces ZnO, realize
Application of the structure of asymmetric local fields regulation and control in photodetection field in the faces ZnO.
Foregoing invention forms with gas molecules to the partial adsorbates of nanometer sheet, comes using asymmetric hafnium oxide is introduced
The concentration for regulating and controlling Zinc oxide nano sheet both sides carrier passes through asymmetric local fields to asymmetric local fields in forming face
The separation of photo-generated carrier is accelerated in regulation and control, come solve the problems, such as ZnO Investigation on Persistent Photoconductivity Effect, it can be achieved that device quick response,
Low-dark current, detectivity is high, low-power consumption etc..
The structure of the detector is followed successively by from bottom to top：P-type Si substrates 1, SiO2Layer 2, in SiO2It is super in oxide layer
Thin ZnO nano piece 3 makes source electrode 4 and drain electrode 5, the ZnO nano piece among source electrode and drain electrode in ZnO nano on piece left and right ends
Half deposition hafnium oxide dielectric layer 6；
The p-type Si substrates 1 are boron heavy doping；
The SiO2The thickness of layer 2 is 300 ± 10 nanometers；
The thickness of the zinc oxide film 3 is 25~35 nanometers, and length and width are 10~20 microns, 2~10 microns respectively；
The metal source 4 and metal-drain 5 is Ti and Au electrodes, and lower layer's Ti thickness is 5-15 nanometers, and upper layer Au is thick
Degree is 45-75 nanometers.
The top, passivation layer 6 is HfO2, thickness is 10~20 nanometers.
2. the present invention refers to the low-dimensional nano photodetectors and preparation method of asymmetric local fields regulation and control in a kind of face, special
Sign is that device preparation includes the following steps：
1) grows large specific surface area using CVD method and has higher electron mobility and carrier on sapphire
The ultra-thin ZnO nano piece of concentration, SiO is transferred to by ZnO nano piece2On/Si substrates；
2) utilize electron beam exposure EBL technologies, thermal evaporation and stripping etc. technologies the ZnO nano piece shifted in advance just
Titanium deposition and gold electrode is accurately positioned in top, for the source of doing, drain electrode；
3) utilizes electron beam exposure EBL technologies, and the technologies such as atomic layer deposition and stripping are in the ZnO nano piece shifted in advance
The half of surface raceway groove deposit hafnium oxide dielectric layer, to be prepared into the low-dimensional with asymmetric local fields regulation and control in face
Nano photodetectors.
Zinc oxide is because defect or the doping of unintentional property introduce high thermal excitation intrinsic carrier concentration, in certain bias
Under, these intrinsic carriers are collected to form larger channel current i.e. dark current by electrode.Under illumination, when the energy of incident photon
More than zinc oxide energy gap when, the photo-generate electron-hole of generation to being detached under applying bias, from can be formed photoproduction electricity
Stream, the electric current collected at this time are the summation of dark current and photogenerated current.Using asymmetric hafnium oxide is introduced, electrification gas is formed
Molecule is to the partial adsorbates of nanometer sheet, to regulate and control the concentration of ZnO nano piece both sides carrier, to asymmetric local in forming face
, while quick separating, the response for greatly improving device are fast under the action of asymmetric local fields in face for light induced electron and hole
Degree, the channel current under illumination are mainly that the photogenerated current caused by light induced electron and hole is formed, and dark current is had
The inhibition of effect improves the separation of light induced electron and hole pair, solves the problems, such as ZnO Investigation on Persistent Photoconductivity Effect well, greatly improves ZnO
The response speed of photodetector has higher commutating ratio, super good detectivity and responsiveness.
The advantages of patent of the present invention, is：
The one layer of very thin HfO of a half mulching of this hair in ZnO raceway grooves2, using asymmetric hafnium oxide is introduced, form electrification
Gas molecule is to the partial adsorbates of nanometer sheet, to regulate and control the concentration of ZnO nano piece both sides carrier, asymmetric local in forming face
, it thus greatly reduces the dark current of detector and accelerates the separation in light induced electron and hole, improve the noise of device
Than and response speed, solve the problems, such as zinc oxide Investigation on Persistent Photoconductivity Effect well.It is non-in the face that zinc oxide is formed based on this method
The response speed rising edge 335ms of the photodetector of symmetrical local fields regulation and control, failing edge 373ms, dark current can be to 10- 12What A, responsiveness and detectivity can be stablized is maintained at~103A/W and~1014Jones。
Description of the drawings
Fig. 1 is the structural schematic diagram based on the photodetector of asymmetric local fields regulation and control in the faces ZnO.
In Fig. 1：1Si substrates, 2SiO2, 3 zinc oxide, 4 source electrodes, 5 drain electrodes, 6 hafnium oxide.
Fig. 2 is that the photodetector of asymmetric local fields regulation and control in ZnO field-effect transistors photodetector and the faces ZnO exists
Output characteristic curve under no light.Wherein (a) is output characteristics of the ZnO field-effect transistors photodetector under no light
Curve (b) is output characteristic curve of the photodetector of asymmetric local fields regulation and control in the faces ZnO under no light.
Fig. 3 be responsiveness of the photodetector of asymmetric local fields regulation and control in the faces ZnO under different incident optical powers and
Detectivity.
Fig. 4 is the photodetector of asymmetric local fields regulation and control in ZnO field-effect transistors photodetector and the faces ZnO
Response speed curve.Wherein (a) is the response speed curve of ZnO field-effect transistor photodetectors, is (b) non-in the faces ZnO
The response speed curve of the photodetector of symmetrical local fields regulation and control.
Specific implementation mode
It elaborates below in conjunction with the accompanying drawings to the specific implementation mode of the present invention：
The present invention has developed the photodetector of asymmetric local fields regulation and control in face.In one layer of a half mulching for ZnO raceway grooves
Very thin HfO2, using asymmetric hafnium oxide is introduced, formed with gas molecules to the partial adsorbates of nanometer sheet, to regulate and control
The concentration of ZnO nano piece both sides carrier, asymmetric local fields in forming face, when greatly improving the response of ZnO photodetectors
Between, there is higher commutating ratio, higher detectivity and responsiveness.
It is as follows：
1. the selection of substrate
Select heavily-doped p-type silicon as substrate, resistivity is 0.05 Ω cm, SiO2Oxidated layer thickness is 300nm；
The making of 2.mark labels
Mark figures are prepared on p-type silicon substrate using ultraviolet photolithographic method, and metal mark is prepared using thermal evaporation techniques,
15 nanometers of titanium, 45 nanometers of gold, in conjunction with conventional stripping methods, stripping metal film obtains metal mark labels.
3. the preparation and transfer of material
It grows large specific surface area on sapphire using CVD method and there is higher electron mobility and carrier concentration
Ultra-thin ZnO nano piece, then the ZnO nano piece on sapphire is transferred to the p-type of mark labels by the methods of colliding with
On silicon substrate；
4. the source of preparation, drain electrode
It is taken pictures at material by light microscope, the figure of hearth electrode is prepared using DesignCAD21 Software for Design, used
Sol evenning machine spin coating PMMA, rotating speed 4000 turns/min, time 40s, 170 degree of drying times are 5 minutes；It is right using electron beam exposure
Electrode pattern carries out precise positioning exposure, is then developed with PMMA developer solutions；Metal electrode is prepared using thermal evaporation techniques,
15 nanometers of titanium, 45 nanometers of gold；In conjunction with traditional stripping means, impregnated 10 minutes with acetone soln, stripping metal film, acquisition source,
Drain electrode.
5. preparing HfO2Dielectric layer
It is taken pictures at electrode by light microscope, then utilizes DesignCAD21 Software for Design HfO on picture2System
Standby figure, graphics request covers ZnO nano piece half region, and is contacted with one side electrode；Using with sol evenning machine spin coating PMMA,
Rotating speed 4000 turns/min, time 40s, 170 degree of drying times are 5 minutes；Using electron beam exposure, electrode pattern is carried out accurate
Then positioning exposure is developed with PMMA developer solutions；HfO is deposited using technique for atomic layer deposition2, 10 nanometers of thickness；In conjunction with
It in conjunction with traditional stripping means, is impregnated 10 minutes with acetone soln, stripping obtains HfO2Dielectric layer.
6. Fig. 1 is device architecture schematic diagram.
7. Fig. 2 is the photodetector of asymmetric local fields regulation and control in ZnO field-effect transistors photodetector and the faces ZnO
Output characteristic curve under no light.Wherein, Fig. 2 (a) is that ZnO field-effect transistors photodetector is defeated under no light
Go out characteristic curve, current-voltage output characteristics shows that pure ZnO field-effect transistors have good Ohmic contact, and dark current
It is larger；Fig. 2 (b) is output characteristic curve of the photodetector of asymmetric local fields regulation and control in the faces ZnO under no light, electricity
Stream-voltage output characteristics show there is good commutating ratio, and commutating ratio is more than 400, this is because by introducing HfO2Medium
Layer, makes covering HfO2Poplar vacancy is increased inside the ZnO of half, and left and right ends formation Lacking oxygen is poor, the surface free electron made
Concentration difference is formed, to asymmetric local fields in forming face, generates good rectified action.
8. Fig. 3 is responsiveness of the photodetector of asymmetric local fields regulation and control in the faces ZnO under different incident optical powers
With the curve of detectivity.Show super for different channel lengths (8 μm to 15 μm) and thickness (25nm to 35nm), device
High photo absorption property, responsiveness and detectivity formula are respectively
ZnO nano piece (width 2nm, thickness 30nm, 15 μm of raceway groove) photodetector under asymmetric local fields regulation and control is in near-infrared wave
The detectivity of section (λ=450nm) is up to 2.5 × 1013Jones；ZnO nano piece (width 4nm, thickness under asymmetric local fields regulation and control
30 nanometers of degree, 10 μm of raceway groove) photodetector near infrared band (λ=450nm) detectivity up to 8 × 1013Jones；It is non-right
Claim local fields regulation and control under ZnO nano piece (width 6nm, thickness 25nm, 8 μm of raceway groove) photodetector near infrared band (λ=
Detectivity 450nm) is up to 6 × 1014Jones。
9. Fig. 4 is the photodetector of asymmetric local fields regulation and control in ZnO field-effect transistors photodetector and the faces ZnO
Response speed curve.The timing definition of rising edge is photoelectric current increases to 90 percent from percentage ten, the time of failing edge
It is defined as photoelectric current and is reduced to 10 from percentage 90.Fig. 4 (a) is the response of ZnO field-effect transistor photodetectors
Rate curve, the time 13.8s of detector rising edge, failing edge time 23.7s, due to zinc oxide because defect or unintentional property are mixed
It is miscellaneous to introduce high thermal excitation intrinsic carrier concentration, therefore there are Investigation on Persistent Photoconductivity Effect phenomenon, the response time is slower；The faces Fig. 4 (b) ZnO
The response speed curve of the photodetector of interior asymmetric local fields regulation and control, the time 335ms of detector rising edge, when failing edge
Between 373ms, this has broken the response speed of former zinc oxide photoconductive detector second rank, with great breakthrough.This
It is attributed to the fact that asymmetric local fields in zinc oxide face, accelerates carrier and quickly divide in asymmetric local field areas in face
From.
As a result the low-dimensional nano photodetectors and preparation method thereof for illustrating asymmetric local fields regulation and control in face of the present invention, should
Structure devices can effectively solve zinc oxide Investigation on Persistent Photoconductivity Effect phenomenon, greatly improve the response speed of device, while have again higher
Responsiveness and detectivity, to improve the practicability of Nano semiconductor photoelectric detector.
Claims (2)
1. the low-dimensional nano photodetectors of asymmetric local fields regulation and control in a kind of face, it is characterised in that：
The structure of the detector is followed successively by from bottom to top：P-type Si substrates (1), SiO2Layer (2), in SiO2It is super in oxide layer
Thin ZnO nano piece (3) makes source electrode (4) and drain electrode (5), the ZnO among source electrode and drain electrode in ZnO nano on piece left and right ends
The half deposition hafnium oxide dielectric layer (6) of nanometer sheet；
(1) p-type Si substrates are boron heavy doping；
Described (2) SiO2Oxidated layer thickness is 300 ± 10 nanometers；
The thickness of the zinc oxide film (3) is 20~40 nanometers, and length and width are 10~20 microns, 2~10 microns respectively；
The metal source (4) and metal-drain (5) is Ti and Au electrodes, and lower layer's Ti thickness is 5-15 nanometers, and upper layer Au is thick
Degree is 45-75 nanometers；
The top, passivation layer (6) is HfO2, thickness is 10~20 nanometers.
2. a kind of low-dimensional nano photodetectors preparing asymmetric local fields regulation and control in face as described in claim 1, special
Sign is that method and step is as follows：
1) grows large specific surface area using CVD method and has higher electron mobility and carrier concentration on sapphire
Ultra-thin ZnO nano piece, ZnO nano piece is transferred to SiO2On/Si substrates；
2) utilizes electron beam exposure EBL technologies, and the technologies such as thermal evaporation and stripping are in the surface of the ZnO nano piece shifted in advance
Titanium deposition and gold electrode is accurately positioned；
3) utilize electron beam exposure EBL technologies, atomic layer deposition and stripping etc. technologies the ZnO nano piece shifted in advance just
The half deposit hafnium oxides dielectric layer of upper channels, to be prepared into the low-dimensional nanometer light with asymmetric local fields regulation and control in face
Electric explorer.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109950359A (en) * | 2019-03-29 | 2019-06-28 | 中国科学院上海技术物理研究所 | It is a kind of to be passivated enhanced low-dimensional nanometer detection device and preparation method using hafnium oxide |
| CN110364581A (en) * | 2019-06-06 | 2019-10-22 | 浙江大学 | The conductivity type photodetector structure of asymmetrical beam up and down based on field-effect |
| CN111668328A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
| CN111952396A (en) * | 2020-08-12 | 2020-11-17 | 南通大学 | Room-temperature InAsSb nanowire mid-infrared photoelectric detector and preparation method thereof |
| CN112242456A (en) * | 2020-09-15 | 2021-01-19 | 中国科学院上海技术物理研究所 | Two-dimensional material detector based on asymmetric integration of optical microstrip antenna |
| CN113140650A (en) * | 2021-04-06 | 2021-07-20 | 天津大学 | Vertical coupling transparent photoelectric detector based on surface state absorption principle |
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| US20140263945A1 (en) * | 2013-03-14 | 2014-09-18 | Nutech Ventures | Floating-gate transistor photodetector |
| CN106898664A (en) * | 2017-01-13 | 2017-06-27 | 上海理工大学 | A kind of preparation method of high sensitivity semiconductor nano ultraviolet light detector |
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| US20140263945A1 (en) * | 2013-03-14 | 2014-09-18 | Nutech Ventures | Floating-gate transistor photodetector |
| CN106898664A (en) * | 2017-01-13 | 2017-06-27 | 上海理工大学 | A kind of preparation method of high sensitivity semiconductor nano ultraviolet light detector |
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| CN109950359A (en) * | 2019-03-29 | 2019-06-28 | 中国科学院上海技术物理研究所 | It is a kind of to be passivated enhanced low-dimensional nanometer detection device and preparation method using hafnium oxide |
| CN110364581A (en) * | 2019-06-06 | 2019-10-22 | 浙江大学 | The conductivity type photodetector structure of asymmetrical beam up and down based on field-effect |
| CN110364581B (en) * | 2019-06-06 | 2021-03-26 | 浙江大学 | Up-down asymmetric photoconductive type photoelectric detector structure based on field effect |
| CN111668328A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
| CN111668328B (en) * | 2020-06-22 | 2022-03-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
| CN111952396A (en) * | 2020-08-12 | 2020-11-17 | 南通大学 | Room-temperature InAsSb nanowire mid-infrared photoelectric detector and preparation method thereof |
| CN111952396B (en) * | 2020-08-12 | 2024-06-07 | 南通大学 | Room temperature InAsSb nanowire mid-infrared photoelectric detector and preparation method |
| CN112242456A (en) * | 2020-09-15 | 2021-01-19 | 中国科学院上海技术物理研究所 | Two-dimensional material detector based on asymmetric integration of optical microstrip antenna |
| CN112242456B (en) * | 2020-09-15 | 2023-12-26 | 中国科学院上海技术物理研究所 | Two-dimensional material detector based on asymmetric integration of optical microstrip antenna |
| CN113140650A (en) * | 2021-04-06 | 2021-07-20 | 天津大学 | Vertical coupling transparent photoelectric detector based on surface state absorption principle |
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