CN108400143A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN108400143A CN108400143A CN201810168639.9A CN201810168639A CN108400143A CN 108400143 A CN108400143 A CN 108400143A CN 201810168639 A CN201810168639 A CN 201810168639A CN 108400143 A CN108400143 A CN 108400143A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000003252 repetitive effect Effects 0.000 claims abstract description 45
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims description 32
- 241001062009 Indigofera Species 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000036186 satiety Effects 0.000 description 1
- 235000019627 satiety Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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Abstract
A kind of imaging sensor and forming method thereof, described image sensor includes：Semiconductor substrate；Pixel device is located in the semiconductor substrate；Filter matrix, positioned at the surface of the semiconductor substrate, the filter matrix includes multiple minimum repetitive units, each minimum repetitive unit includes at least the first green filter and the second green filter, and first green filter is different from the light-receiving area of the second green filter.The present invention program can improve the dynamic range of imaging sensor.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technology
Imaging sensor is the core component of picture pick-up device, and image taking work(is realized by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, abbreviation CIS) device as an example, since it is with low-power consumption and height
The advantages of signal-to-noise ratio, therefore be widely applied in various fields.
For later illuminated (Back-side Illumination, abbreviation BSI) CIS, in existing manufacturing process, first
Logical device, pixel device and metal interconnection structure are formed in semiconductor substrate, then using carrying wafer and described half
The front bonding of conductor substrate, and then the back of semiconductor substrate is thinned, and then formed at the back side of semiconductor substrate
The subsequent technique of CIS, such as latticed grid (Grid) is formed at the semiconductor substrate back side of the pixel device, described
Optical filter (Filter) matrix etc. is formed in grid between grid.
Wherein, filter matrix generally includes multiple minimum repetitive units, by taking Bayer (Bayer) filter matrix as an example,
The green filter for including in the minimum repetitive unit is twice of red filter or blue filter.Specifically, phase
Than other colors in visible spectrum, human visual system is more sensitive to the color in green wave band, therefore tends to be arranged
More green filters.
Further, the incident light through filter matrix is obtained by the pixel device in semiconductor substrate, then led to
Cross photodiode and absorbed and formed photoelectric current to the incident photon by each optical filter, so by logic circuit into
After row operation amplifier, the data by each optical filter are respectively obtained, the data determined according to multiple optical filters are integrated,
Output obtains image.
However, in the prior art, the dynamic range of imaging sensor is often insufficient, output image is easy to happen overexposure
Or under exposed problem.
Invention content
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, can improve image sensing
The dynamic range of device.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, including：Semiconductor substrate；Picture
Plain device is located in the semiconductor substrate；Filter matrix is located at the surface of the semiconductor substrate, the optical filter square
Battle array includes multiple minimum repetitive units, and each minimum repetitive unit includes at least the first green filter and the second green
Optical filter, and first green filter is different from the light-receiving area of the second green filter.
Optionally, the minimum repetitive unit further includes red filter and blue filter, first green filter
The light-receiving area of device be less than the second green filter light-receiving area, the light-receiving area of second green filter with it is described red
Color optical filter, the light-receiving area of blue filter are identical.
Optionally, the light-receiving area of first green filter is the light-receiving area of the red filter and described
The 50% to 70% of the light-receiving area of blue filter.
Optionally, described image sensor further includes：Latticed grid is located at the surface of the semiconductor substrate, institute
Stating grid has multiple mesh openings, and each optical filter in the minimum repetitive unit is located at the mesh openings of the grid
It is interior.
Optionally, the size of the mesh openings residing for first green filter is less than residing for other green filters
Mesh openings size.
Optionally, each mesh openings of the grid are of the same size, and described image sensor further includes：Metal
Ring is located in the mesh openings residing for first green filter.
Optionally, the minimum repetitive unit further includes red filter and blue filter, first green filter
The light-receiving area of device is less than the light-receiving area of the red filter, blue filter, the light of second green filter
Area is more than the light-receiving area of the red filter, blue filter.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, including：It provides
Semiconductor substrate, the semiconductor substrate is interior to have pixel device；Filter matrix is formed on the surface of the semiconductor substrate,
Each filter matrix includes multiple minimum repetitive units, and the minimum repetitive unit includes at least the first green filter
And second green filter, and first green filter is different from the light-receiving area of the second green filter.
Optionally, the minimum repetitive unit further includes red filter and blue filter, first green filter
The light-receiving area of device be less than the second green filter light-receiving area, the light-receiving area of second green filter with it is described red
Color optical filter, the light-receiving area of blue filter are identical.
Optionally, before the surface of the semiconductor substrate forms filter matrix, the shape of the imaging sensor
Further include at method：On the surface of the semiconductor substrate, latticed grid is formed, there are the grid multiple grids to open
Mouthful, and each optical filter in the minimum repetitive unit is located in the mesh openings of the grid.
Optionally, the size of the mesh openings residing for first green filter is less than residing for other green filters
Mesh openings size.
Optionally, each mesh openings of the grid are of the same size, the formation side of the imaging sensor
Method further includes：In mesh openings residing for first green filter, becket is formed.
Optionally, the minimum repetitive unit further includes red filter and blue filter, first green filter
The light-receiving area of device is less than the light-receiving area of the red filter, blue filter, the light of second green filter
Area is more than the light-receiving area of the red filter, blue filter.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In embodiments of the present invention, a kind of imaging sensor is provided, including：Semiconductor substrate；Pixel device is located at described
In semiconductor substrate；Filter matrix, is located at the surface of the semiconductor substrate, and the filter matrix includes multiple minimum weights
Multiple unit, each minimum repetitive unit include at least the first green filter and the second green filter, and described the
One green filter is different from the light-receiving area of the second green filter.Using the above scheme, pass through the first green of setting
Optical filter is different from the light-receiving area of the second green filter, and the photosignal amount of multiple green filters can be made different
Saturation is respectively reached at time for exposure, to have an opportunity when being integrated to the data determined according to multiple green filters,
With various data basis, contribute to the image that higher quality is obtained by changing integration algorithm, to improve image sensing
The dynamic range of device.
Further, the light-receiving area that first green filter is arranged is less than the light-receiving area of the second green filter,
The light-receiving area of second green filter is identical as the light-receiving area of the red filter, blue filter, can subtract
The incident light for penetrating the first green filter less, to reduce the photoelectricity that the corresponding pixel device of the first green filter is collected into
Semaphore, and then extend photosignal amount and reach corresponding time for exposure when saturation value, help to reduce appearance " supersaturation " now
The possibility of elephant, and pixel device is made to collect more detailed information in kind under light environment, be conducive to improve image
The dynamic range of sensor promotes the image quality of imaging sensor output.
Further, grid of the setting with multiple mesh openings, and each optical filter position in the minimum repetitive unit
In in the mesh openings of the grid, the size of the mesh openings residing for first green filter is less than other green filters
Mesh openings size residing for device, can make first green filter light-receiving area be less than the second green filter by
Light area is conducive to be improved by the light-receiving area of the first green filter of existing processing step pair, reduce additional
Technological operation helps to reduce cost.
Further, each mesh openings of the grid are of the same size, and are located at first green by setting
The becket in mesh openings residing for optical filter can make described since becket occupies a part of light-receiving area
The light-receiving area of one green filter is less than the light-receiving area of the second green filter, to be conducive to the work by additionally adding
The light-receiving area of the first green filter of skill step pair is improved, and helps to reduce the adjustment to original technological parameter.
Further, the light-receiving area that first green filter is arranged is less than the red filter, blue filter
Light-receiving area, the light-receiving area of second green filter is more than the light-receiving surface of the red filter, blue filter
Product, can increase the incident light through the second green filter, be received to increase the corresponding pixel device of the second green filter
The photosignal amount collected, contributes under half-light environment, improves light exposure, to collect more detailed information in kind,
Be conducive to be promoted the image quality of imaging sensor output.
Description of the drawings
Fig. 1 is a kind of photoelectric respone curve synoptic diagram of the green filter of imaging sensor in the prior art；
Fig. 2 is a kind of cross-sectional view of imaging sensor in the embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of filter matrix in the embodiment of the present invention；
Fig. 4 is the cross-sectional view of another imaging sensor in the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another filter matrix in the embodiment of the present invention；
Fig. 6 is a kind of photoelectric respone curve synoptic diagram of the green filter of imaging sensor in the embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another filter matrix in the embodiment of the present invention；
Fig. 8 is the photoelectric respone curve synoptic diagram of the green filter of another imaging sensor in the embodiment of the present invention；
Fig. 9 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.
Specific implementation mode
In the prior art, filter matrix includes multiple minimum repetitive units, and the filter matrix for example can be
Bayer array, mosaic sequence array or other pattern arrays.
In filter matrix, more green filters are usually set, therefore in order to promote imaging sensor output
Image quality improves the photoelectric response performance of green filter as far as possible.By taking Bayer array as an example, the minimum repetition
The green filter for including in unit is twice of red filter or blue filter, and green filter is arranged in adjacent rows
Alternately between embedded blue electric-wave filter or between embedded red filter.
Fig. 1 is a kind of photoelectric respone curve synoptic diagram of the green filter of imaging sensor in the prior art.
As shown in Figure 1, horizontal axis is the time for exposure under fixed light intensity environment, the time for exposure is longer, and light exposure is higher；The longitudinal axis
For photosignal amount, the time for exposure is longer, and the photosignal amount that pixel device is collected into is more.
Wherein, dotted line is for indicating that the photosignal amount of green filter is saturated at time for exposure T1, in the time for exposure
Region after T1 belongs to supersaturated region A1.After photosignal amount reaches time for exposure T1, it is easy for " satiety occur
With " phenomenon, lead to image fault.
It can be seen that the imaging sensor shown in Fig. 1 is only capable of before time for exposure T1, the higher image of output quality,
The dynamic range of imaging sensor is smaller.
The present inventor passes through the study found that in the prior art, the green filter light in filter matrix
Area is consistent, and the photosignal amount of multiple green filters is saturated at time for exposure T1, passes through each green filter
Data are more consistent, to which when being integrated to the data determined according to multiple green filters, data basis is excessively single
One, it is difficult to which the image that higher quality is obtained by changing integration algorithm causes the dynamic range of imaging sensor smaller.
In embodiments of the present invention, a kind of imaging sensor is provided, including：Semiconductor substrate；Pixel device is located at described
In semiconductor substrate；Filter matrix, is located at the surface of the semiconductor substrate, and the filter matrix includes multiple minimum weights
Multiple unit, each minimum repetitive unit include at least the first green filter and the second green filter, and described the
One green filter is different from the light-receiving area of the second green filter.Using the above scheme, pass through the first green of setting
Optical filter is different from the light-receiving area of the second green filter, and the photosignal amount of multiple green filters can be made different
Saturation is respectively reached at time for exposure, to have an opportunity when being integrated to the data determined according to multiple green filters,
With various data basis, contribute to the image that higher quality is obtained by changing integration algorithm, to improve image sensing
The dynamic range of device.
It is understandable to enable above-mentioned purpose, feature and the advantageous effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
With reference to Fig. 2, Fig. 2 is a kind of cross-sectional view of imaging sensor in the embodiment of the present invention.
Described image sensor may include semiconductor substrate 10, pixel device 11 and filter matrix 13.
Wherein, the pixel device 11 can be located in the semiconductor substrate 10, and the filter matrix 13 can position
In the surface of the semiconductor substrate 10.
Specifically, the semiconductor substrate 10 can make a living with epitaxial layer (Epitaxy layer, abbreviation Epi
Layer the material of substrate), the semiconductor substrate 10 can be silicon, germanium, SiGe, silicon carbide, GaAs or gallium indium etc.
Material appropriate applied to imaging sensor.
The pixel device 11 may include photodiode 111 and pixel circuit 112, wherein the pixel circuit
112 may include the device to form selection transistor, reset transistor and source with the various transistors appropriate such as transistor, example
Such as may include transmission grid (Transfer Gate, TG) and floating diffusion region (Floating Diffusion, FD).It needs
It is noted that in embodiments of the present invention, not being restricted for the composition of specific pixel circuit 112.
Further, on the surface of the pixel device 11, metal interconnection structure 12, the metal interconnection can also be formed
Structure 12 may include more metal layers, can be connected by through-hole between the more metal layers and by interlayer dielectric layer point
From.
The filter matrix 13 can be located at the front of the semiconductor substrate 10, may be located on the semiconductor lining
The back side at bottom 10.Fig. 2 shows back-illuminated type CIS in, the filter matrix 13 is located at the back side of the semiconductor substrate 10.
Specifically, in the prior art, CIS may include preceding illuminated (Front-side Illumination, FSI)
CIS and rear illuminated CIS, the rear illuminated CIS are referred to as back-illuminated type CIS.In preceding illuminated CIS, light is served as a contrast from semiconductor
Photo-generated carrier is generated in the front illuminated to photodiode at bottom, and then forms electric signal.In back-illuminated type CIS, light from
Photo-generated carrier is generated on the back side illuminaton to photodiode of semiconductor substrate, and then forms electric signal.
Further, described image sensor can also include grid 141, and the grid 141 can be latticed, be located at
The surface of semiconductor substrate, for incident light to be isolated, to reduce the optics string of the incident light received by different optical filters
It disturbs, the grid 141 can have multiple mesh openings, each optical filter to be located in the mesh openings of the grid.Wherein, institute
It can be metallic grid (Metal Grid) to state grid 141.
Described image sensor can also include camera lens (Micro-lens) 15, and the camera lens 15 can be used for obtaining incident
Light.
With reference to Fig. 3, Fig. 3 is a kind of structural schematic diagram of filter matrix in the embodiment of the present invention.
The filter matrix 13 may include multiple minimum repetitive units 130, and the minimum repetitive unit 130 at least wraps
Containing the first green filter 131, the second green filter 132, red filter 133 and blue filter 134, described first
Green filter 131 is different from the light-receiving area of second green filter 132.
It should be pointed out that although Fig. 3 is described for comprising 4 minimum repetitive units 130, implement in the present invention
In example, the repetition number of minimum repetitive unit 130 is not restricted, for each filter in each minimum repetitive unit 130
The placement location and sequence of light device are not also restricted.
In embodiments of the present invention, pass through the light-receiving surface of setting the first green filter 131 and the second green filter 132
Product is different, the photosignal amount of multiple green filters can be made to respectively reach saturation at the different time for exposure, to have
Chance has various data basis, helps to pass through when being integrated to the data determined according to multiple green filters
Change the image that integration algorithm obtains higher quality, to improve the dynamic range of imaging sensor.
In specific implementation, the light-receiving area of first green filter 131 can be less than the second green filter 132
Light-receiving area, the light-receiving area of second green filter 132 can be with the red filter 133, blue filter
134 light-receiving area is identical.
In the imaging sensor shown in Fig. 3, grid 141 has multiple mesh openings, and the minimum repetitive unit 130
In each optical filter be located in the mesh openings of the grid 141, the mesh openings residing for first green filter 131
Size be less than other green filters residing for mesh openings size.
In embodiments of the present invention, there is the grid 141 of multiple mesh openings, and the minimum repetitive unit by setting
Each optical filter in 130 is located in the mesh openings of the grid 141, the grid residing for first green filter 131
The size of opening is less than the mesh openings size residing for other green filters, can make first green filter 131
Light-receiving area is less than the light-receiving area of the second green filter 132, red filter 133, blue filter 134, is conducive to lead to
The light-receiving area for crossing the first green filter of existing processing step pair 131 is improved, and is reduced additional technological operation, is helped
In reducing cost.
It should be pointed out that the light-receiving area of first green filter 131 is not answered too small, otherwise can cause through the
The incident light of one green filter 131 is very few, is difficult to be collected into enough photosignal amounts under subdued light conditions, causes half-light item
Part hypograph resolution ratio is too low, and image quality is excessively poor；The light-receiving area of first green filter 131 do not answer it is excessive, otherwise
Differ very few with the light-receiving area of second green filter 132, however it remains the number determined according to multiple green filters
According to the single problem in basis.
As a unrestricted example, it is described that the light-receiving area of first green filter 131, which can be arranged,
The 50% to 70% of the light-receiving area of the light-receiving area of red filter 133 and the blue filter 134.
It is the cross-sectional view of another imaging sensor in the embodiment of the present invention with reference to Fig. 4, Fig. 4.
With Fig. 2 shows imaging sensor compared with, each mesh openings of grid 142 are of the same size, and Fig. 4 is shown
Imaging sensor further include becket 16, be located at grid 142 a part of mesh openings in, with the net that becket 16 is not arranged
Optical filter in lattice opening is compared, and the light-receiving area of the optical filter in mesh openings residing for becket 16 is smaller.
In specific implementation, the material of the becket 16 can be consistent with the material of grid 142, to improve semiconductor device
The suitability of part can also be the metal material that other are used to be isolated incident light.It should be pointed out that in the embodiment of the present invention
In, the type of the specific material of becket 16 is not restricted.
It should be pointed out that the thickness of the becket 16 can be close with the thickness of the grid 142, it is also less than
The thickness of the grid 142, is subject to the light-receiving area that can reduce the optical filter in the mesh openings residing for becket 16.Its
In, the direction of the thickness is perpendicular to the direction of the semiconductor substrate 10.
It is the structural schematic diagram of another filter matrix in the embodiment of the present invention with reference to Fig. 5, Fig. 5.
The filter matrix may include multiple minimum repetitive units 135, and the minimum repetitive unit 135 includes at least
First green filter 136, the second green filter 137, red filter 138 and blue filter 139, described first is green
Color optical filter 136 is different from the light-receiving area of second green filter 137.
In specific implementation, the light-receiving area of first green filter 136 can be less than the second green filter 137
Light-receiving area, the light-receiving area of second green filter 137 can be with the red filter 138, blue filter
139 light-receiving area is identical.
In the imaging sensor shown in Fig. 5, grid 142 has multiple mesh openings, and the minimum repetitive unit 135
In each optical filter be located in the mesh openings of the grid 142, becket 16 is located at first green filter, 136 institute
In the mesh openings at place, so that the light-receiving area of first green filter 136 is less than the light of the second green filter 137
Area.
In embodiments of the present invention, each mesh openings of the grid 142 are of the same size, and are located at by setting
The becket 16 in mesh openings residing for first green filter 136, since becket 16 occupies a part of light
Area can make the light-receiving area of first green filter 136 be less than the light-receiving area of the second green filter 137,
To be conducive to be improved by the light-receiving area of the first green filter of processing step pair 136 additionally added, contribute to
Reduce the adjustment to original technological parameter.
It should be pointed out that the light-receiving area of first green filter 136 does not answer the too small namely described becket 16
The light-receiving area of occupancy is not answered excessive, the incident light through the first green filter 131 otherwise can be caused very few, in subdued light conditions
Under be difficult to be collected into enough photosignal amounts, cause subdued light conditions hypograph resolution ratio too low, image quality is excessively poor；Described
It is too small that the light-receiving area of one green filter 136 does not answer the light-receiving area of the excessive namely described occupancy of becket 16 not answer, otherwise
Differ very few with the light-receiving area of second green filter 137, however it remains the number determined according to multiple green filters
According to the single problem in basis.
As a unrestricted example, the light-receiving area of first green filter 136 is the red filter
The 50% to 70% of the light-receiving area of the light-receiving area of device 138 and the blue filter 139.
With reference to Fig. 6, Fig. 6 is that a kind of photoelectric respone curve of the green filter of imaging sensor shows in the embodiment of the present invention
It is intended to.
It should be pointed out that the imaging sensor shown in Fig. 2 to Fig. 5 can form the green filter shown in Fig. 6
Photoelectric respone curve synoptic diagram.
As shown in fig. 6, horizontal axis is the time for exposure under fixed light intensity environment, the time for exposure is longer, and light exposure is higher, the longitudinal axis
For photosignal amount, the time for exposure is longer, and the photosignal amount that pixel device is collected into is more.
Wherein, the dotted line at time for exposure T1 is used to indicate the photosignal amount of the second green filter in time for exposure T1
Place is saturated, and the dotted line at time for exposure T2 is used to indicate that the photosignal amount of the first green filter to be satisfied at time for exposure T2
With due to that can combine the data of two green filters, region after t 2 can be confirmed as belonging to supersaturated area
Domain A2, namely when photosignal amount is after the time for exposure reaching time for exposure T2, is susceptible to " supersaturation " phenomenon, leads to figure
Image distortion.
It can be seen that the imaging sensor shown in Fig. 6 has an opportunity before time for exposure T2, the higher figure of output quality
Picture, since T2 is more than T1, compared to Figure 1, the dynamic range of imaging sensor is improved.
In embodiments of the present invention, the light-receiving area that first green filter can be arranged is less than the second green filter
The light-receiving area of device, light-receiving area and the red filter, the light-receiving surface of blue filter of second green filter
Product is identical, it is possible to reduce the incident light for penetrating the first green filter, to reduce the corresponding pixel device of the first green filter
The photosignal amount that part is collected into, and then extend photosignal amount and reach corresponding time for exposure when saturation value, help to reduce
There is the possibility of " supersaturation " phenomenon, and pixel device made to collect more detailed information in kind under light environment,
The dynamic range for being conducive to improve imaging sensor, promotes the image quality of imaging sensor output.
With reference to Fig. 7, Fig. 7 is the structural schematic diagram of another filter matrix in the embodiment of the present invention.The optical filter square
Battle array may include multiple minimum repetitive units 230, and the minimum repetitive unit 230 includes at least the first green filter 231, the
Two green filters 232, red filter 233 and blue filter 234, first green filter 231 and described the
The light-receiving area of two green filters 232 is different.
In specific implementation, the light-receiving area of first green filter 231 can be less than the second green filter 232
Light-receiving area, the light-receiving area of second green filter 232 is more than the red filter 233, blue filter 234
Light-receiving area.
In the imaging sensor shown in Fig. 7, grid 241 has multiple mesh openings, and the minimum repetitive unit 230
In each optical filter be located in the mesh openings of the grid 241, the mesh openings residing for first green filter 231
Size be less than the mesh openings size residing for other green filters, the grid residing for second green filter 232 is opened
The size of mouth is more than the mesh openings size residing for other green filters.
It should be pointed out that in another specific implementation mode of the embodiment of the present invention, can also use described in being located at
The becket in mesh openings residing for first green filter 231, so that the light-receiving area of first green filter 231
Less than the red filter 233, the light-receiving area of blue filter 234.
In embodiments of the present invention, the light-receiving area that first green filter 231 is arranged is less than the red filter
The light-receiving area of the light-receiving area of device 233, blue filter 234, second green filter 232 is more than the red filter
The light-receiving area of device 233, blue filter 234 can also increase when reducing the incident light through the first green filter 231
Add the incident light through the second green filter 232, is collected into increase by 232 corresponding pixel device of the second green filter
Photosignal amount, contribute under half-light environment, improve light exposure, to collect more in kind detailed information, favorably
In the image quality for promoting imaging sensor output.
It should be pointed out that the light-receiving area of second green filter 232 is not answered excessive, otherwise can cause through the
The incident light of two green filters 232 is excessive, and excessive photosignal amount is collected under bright conditions, is caused under bright conditions
Supersaturation is prematurely reached, image quality is influenced；The light-receiving area of second green filter 232 do not answer it is too small, otherwise with institute
The light-receiving area difference for stating the first green filter 231 is very few, however it remains the data base determined according to multiple green filters
The single problem of plinth.
As a unrestricted example, the light-receiving area of second green filter 232 is the red filter
The 105% to 120% of the light-receiving area of the light-receiving area of device 233 and the blue filter 234.
With reference to Fig. 8, Fig. 8 is the photoelectric respone curve of the green filter of another imaging sensor in the embodiment of the present invention
Schematic diagram.
As shown in figure 8, horizontal axis is the time for exposure under fixed light intensity environment, the time for exposure is longer, and light exposure is higher, the longitudinal axis
For photosignal amount, the time for exposure is longer, and the photosignal amount that pixel device is collected into is more.
Wherein, the dotted line at time for exposure T2 is used to indicate the photosignal amount of the first green filter in time for exposure T2
Place is saturated, and the dotted line at time for exposure T3 is used to indicate that the photosignal amount of the second green filter to be satisfied at time for exposure T3
It can be confirmed as belonging to supersaturated region A2 with, the region after time for exposure T2, and the region before time for exposure T3,
The photosignal amount of the photosignal amount slope of a curve of second green filter the second green filter than in the prior art is bent
The slope bigger of line, namely the photosignal amount obtained in the same time for exposure are more, contribute under half-light environment, collect
More material object detailed information, to the higher image of output quality.
Compared with Fig. 1 and Fig. 6, the imaging sensor shown in Fig. 8 has an opportunity before time for exposure T3, under half-light environment
The higher image of output quality, before time for exposure T2, the higher image of output quality, imaging sensor under light environment
Dynamic range be further enhanced.
In embodiments of the present invention, can also increase through the when reducing the incident light through the first green filter
The incident light of two green filters, to increase the photosignal amount that the corresponding pixel device of the second green filter is collected into,
Contribute under half-light environment, improve light exposure, to collect more detailed information in kind, is conducive to promote image sensing
The image quality of device output.
With reference to Fig. 9, Fig. 9 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S11 to step S12：
Step S11：Semiconductor substrate is provided, there is pixel device in the semiconductor substrate；
Step S12：Filter matrix is formed on the surface of the semiconductor substrate, each filter matrix includes more
A minimum repetitive unit, the minimum repetitive unit include at least the first green filter and the second green filter, and institute
It is different from the light-receiving area of the second green filter to state the first green filter.
Further, the minimum repetitive unit can also include red filter and blue filter, and described first is green
The light-receiving area of color optical filter be less than the second green filter light-receiving area, the light-receiving area of second green filter with
The red filter, the light-receiving area of blue filter are identical.
Further, before the surface of the semiconductor substrate forms filter matrix, the shape of described image sensor
Can also include at method：On the surface of the semiconductor substrate, latticed grid is formed, the grid has multiple grids
Opening, and each optical filter in the minimum repetitive unit is located in the mesh openings of the grid.
Further, the size of the mesh openings residing for first green filter can be less than other green filters
Residing mesh openings size.
As a unrestricted example, the light-receiving area of first green filter can be the red filter
The 50% to 70% of the light-receiving area of the light-receiving area of device and the blue filter.
Further, each mesh openings of the grid can be of the same size, the shape of described image sensor
Can also include at method：In mesh openings residing for first green filter, becket is formed.
Further, the minimum repetitive unit can also include red filter and blue filter, and described first is green
The light-receiving area of color optical filter is less than the light-receiving area of the red filter, blue filter, second green filter
Light-receiving area be more than the red filter, blue filter light-receiving area.
As a unrestricted example, the light-receiving area of second green filter can be the red filter
The 105% to 120% of the light-receiving area of the light-receiving area of device and the blue filter.
Principle, specific implementation and the advantageous effect of forming method about the imaging sensor please refer to above and Fig. 2 extremely
The associated description about imaging sensor shown in Fig. 8, details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (13)
1. a kind of imaging sensor, which is characterized in that including：
Semiconductor substrate；
Pixel device is located in the semiconductor substrate；
Filter matrix is located at the surface of the semiconductor substrate, and the filter matrix includes multiple minimum repetitive units, often
A minimum repetitive unit includes at least the first green filter and the second green filter, and first green filter
Device is different from the light-receiving area of the second green filter.
2. imaging sensor according to claim 1, which is characterized in that the minimum repetitive unit further includes red filter
Device and blue filter, the light-receiving area of first green filter is less than the light-receiving area of the second green filter, described
The light-receiving area of second green filter is identical as the light-receiving area of the red filter, blue filter.
3. imaging sensor according to claim 2, which is characterized in that the light-receiving area of first green filter is
The 50% to 70% of the light-receiving area of the light-receiving area of the red filter and the blue filter.
4. imaging sensor according to claim 2, which is characterized in that further include：
Latticed grid, is located at the surface of the semiconductor substrate, and the grid has multiple mesh openings, and the minimum
Each optical filter in repetitive unit is located in the mesh openings of the grid.
5. imaging sensor according to claim 4, which is characterized in that the grid residing for first green filter is opened
The size of mouth is less than the mesh openings size residing for other green filters.
6. imaging sensor according to claim 4, which is characterized in that each mesh openings of the grid have identical
Size, further include：
Becket is located in the mesh openings residing for first green filter.
7. imaging sensor according to claim 1, which is characterized in that the minimum repetitive unit further includes red filter
Device and blue filter, the light-receiving area of first green filter be less than the red filter, blue filter by
Light area, the light-receiving area of second green filter are more than the light-receiving area of the red filter, blue filter.
8. a kind of forming method of imaging sensor, which is characterized in that including：
Semiconductor substrate is provided, there is pixel device in the semiconductor substrate；
Filter matrix is formed on the surface of the semiconductor substrate, each filter matrix includes that multiple minimum repetitions are single
Member, the minimum repetitive unit include at least the first green filter and the second green filter, and the first green filter
Light device is different from the light-receiving area of the second green filter.
9. the forming method of imaging sensor according to claim 8, which is characterized in that the minimum repetitive unit also wraps
Red filter and blue filter are included, the light-receiving area of first green filter is less than the light of the second green filter
The light-receiving area of area, second green filter is identical as the light-receiving area of the red filter, blue filter.
10. the forming method of imaging sensor according to claim 9, which is characterized in that in the semiconductor substrate
Surface is formed before filter matrix, further includes：
On the surface of the semiconductor substrate, form latticed grid, the grid has multiple mesh openings, and it is described most
Each optical filter in small repetitive unit is located in the mesh openings of the grid.
11. the forming method of imaging sensor according to claim 10, which is characterized in that first green filter
The size of residing mesh openings is less than the mesh openings size residing for other green filters.
12. the forming method of imaging sensor according to claim 10, which is characterized in that each grid of the grid
Opening is of the same size, and further includes：
In mesh openings residing for first green filter, becket is formed.
13. the forming method of imaging sensor according to claim 8, which is characterized in that the minimum repetitive unit is also
Including red filter and blue filter, the light-receiving area of first green filter is less than the red filter, indigo plant
The light-receiving area of the light-receiving area of color optical filter, second green filter is more than the red filter, blue filter
Light-receiving area.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021217640A1 (en) * | 2020-04-30 | 2021-11-04 | 深圳市大疆创新科技有限公司 | Imaging device, imaging method and camera |
| WO2022206112A1 (en) * | 2021-03-30 | 2022-10-06 | Oppo广东移动通信有限公司 | Image sensor, camera module and electronic device |
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| CN102789019B (en) * | 2011-05-16 | 2015-05-06 | 元太科技工业股份有限公司 | Color filter and manufacturing method and application thereof |
| CN104969540A (en) * | 2013-12-12 | 2015-10-07 | 索尼公司 | Solid state imaging device, manufacturing method of the same, and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789019B (en) * | 2011-05-16 | 2015-05-06 | 元太科技工业股份有限公司 | Color filter and manufacturing method and application thereof |
| CN104969540A (en) * | 2013-12-12 | 2015-10-07 | 索尼公司 | Solid state imaging device, manufacturing method of the same, and electronic equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021217640A1 (en) * | 2020-04-30 | 2021-11-04 | 深圳市大疆创新科技有限公司 | Imaging device, imaging method and camera |
| WO2022206112A1 (en) * | 2021-03-30 | 2022-10-06 | Oppo广东移动通信有限公司 | Image sensor, camera module and electronic device |
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